JPH09199437A - Semiconductor wafer supporting device - Google Patents
Semiconductor wafer supporting deviceInfo
- Publication number
- JPH09199437A JPH09199437A JP2188996A JP2188996A JPH09199437A JP H09199437 A JPH09199437 A JP H09199437A JP 2188996 A JP2188996 A JP 2188996A JP 2188996 A JP2188996 A JP 2188996A JP H09199437 A JPH09199437 A JP H09199437A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- wafer
- support plate
- supporting
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体ウェーハ
の熱処理装置に使用するため半導体ウェーハを載置する
支持装置の改良に係り、円弧の一部が切断されたリング
状の支持板にウェーハの外周と相似形の内周部を設け、
かつウェーハの外周と接触する部分を支持板表面よりウ
ェーハ厚み分だけ段差を付けて、載置したウェーハ表面
と支持板表面が同一表面となし、熱処理時のスリップ発
生を低減した半導体ウェーハ支持装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a supporting device for mounting a semiconductor wafer for use in a heat treatment device for semiconductor wafers. With an inner peripheral part similar to
Further, the present invention relates to a semiconductor wafer supporting device in which a portion in contact with the outer circumference of the wafer is stepped from the surface of the supporting plate by the thickness of the wafer, the mounted wafer surface and the surface of the supporting plate are the same surface, and the occurrence of slip during heat treatment is reduced. .
【０００２】[0002]
【従来の技術】半導体ウェーハの熱処理装置であるＲＴ
Ｐ（Ｒａｐｉｄ Ｔｈｅｒｍａｌ Ｐｒｏｃｅｓｓｉｎ
ｇ）装置では、タングステンハロゲンランプ等の光源か
らの放射により半導体ウェーハの急速昇温、急速降温を
行うため、半導体ウェーハ以外のチャンバー等の部分は
熱処理される半導体ウェーハに比してかなり温度が低く
なっている。これをコールドウォール型熱処理装置とい
う。2. Description of the Related Art RT which is a heat treatment apparatus for semiconductor wafers
P (Rapid Thermal Processin)
g) In the equipment, the temperature of the semiconductor wafer is rapidly raised and lowered by radiation from a light source such as a tungsten halogen lamp, so that the temperature of the chamber and other parts other than the semiconductor wafer is considerably lower than that of the semiconductor wafer to be heat-treated. Has become. This is called a cold wall type heat treatment device.
【０００３】コールドウォール型熱処理装置の場合、熱
処理される半導体ウェーハの最外周部は、昇温時には光
源からの放射光が集中するため半導体ウェーハの中心部
に比べて温度が高くなり、逆に降温時は半導体ウェーハ
からの輻射が大きいため半導体ウェーハの中心部に比べ
て温度が低くなる。In the case of a cold wall type heat treatment apparatus, the temperature of the outermost peripheral portion of the semiconductor wafer to be heat treated is higher than that of the central portion of the semiconductor wafer because the radiation from the light source is concentrated when the temperature is raised, and the temperature is lowered. At this time, since the radiation from the semiconductor wafer is large, the temperature becomes lower than that in the central portion of the semiconductor wafer.
【０００４】また、ホットウォール型熱処理装置である
バッチ式拡散炉においても、炉内へのウェーハの投入お
よび炉内からの取り出し時には、ＲＴＰ装置と同様に半
導体ウェーハ中心部と外周部で温度差が生じる。Also in a batch type diffusion furnace, which is a hot wall type heat treatment apparatus, there is a temperature difference between the central portion and the outer peripheral portion of a semiconductor wafer at the time of loading and unloading a wafer into the furnace, as in the RTP apparatus. Occurs.
【０００５】この温度差による熱ストレスにより半導体
ウェーハの周辺部で、図２及び図３に示すようにスリッ
プが生じる。このスリップを生じさせる半導体ウェーハ
の周辺部での温度勾配の原因は、半導体ウェーハの最外
周端が不連続に終端しているためである。Due to the thermal stress due to this temperature difference, slip occurs at the peripheral portion of the semiconductor wafer as shown in FIGS. The cause of the temperature gradient in the peripheral portion of the semiconductor wafer that causes this slip is that the outermost peripheral edge of the semiconductor wafer is discontinuously terminated.
【０００６】そこで、熱処理される半導体ウェーハの周
辺にスリップガードリングを設け、非熱処理材の端部を
半導体ウェーハの最外周部からさらに外径方向に遠ざけ
ることにより、半導体ウェーハの周辺部でスリップの発
生を抑制する方法が用いられている。Therefore, a slip guard ring is provided around the semiconductor wafer to be heat-treated, and the end portion of the non-heat-treated material is further distanced from the outermost peripheral portion of the semiconductor wafer in the outer diameter direction to prevent slippage at the peripheral portion of the semiconductor wafer. A method of suppressing the occurrence is used.
【０００７】例えば、特開平４−２７７６１９号に公開
されている技術では、サセプタ上に半導体ウェーハ及び
その周辺にスリップガードリングを設置する方法を採用
している。また、一般に市販されているＲＴＰ装置（例
えば、米国ＡＧ Ａｓｓｏｃｉａｔｅｓ社製、Ｈｅａｔ
ｐｕｌｓｅ ８１０８）では、石英製ピンによって半導
体ウェーハを３点支持し、半導体ウェーハの周辺にスリ
ップガードリングを取り付けている。For example, the technique disclosed in Japanese Patent Laid-Open No. 4-2777619 employs a method of installing a semiconductor wafer on a susceptor and a slip guard ring around the semiconductor wafer. In addition, a generally commercially available RTP device (for example, manufactured by AG Associates, Inc., Heat, USA)
In pulse 8108), a semiconductor wafer is supported at three points by quartz pins, and a slip guard ring is attached to the periphery of the semiconductor wafer.
【０００８】また、ＲＴＰ装置に限らず一般的に熱処理
装置では、半導体ウェーハ中に発生するスリップは図２
及び図３に示すように、半導体ウェーハ１周辺部、特に
半導体ウェーハと支持部材の接触部分から発生すること
が多い。そのため、ウェーハ支持部での半導体ウェーハ
自重による局所的なストレスを緩和するため、接触面積
を大きくしてウェーハの自重を分散させる方法が特開昭
６１−２４７０４８号に公開されている。すなわち、表
面に段差の無いウェーハ支持板上に半導体ウェーハを載
せる方法で、半導体ウェーハの転落を防止するために、
ウェーハ支持板を支柱方向に傾斜を持たせている。Further, not only in the RTP apparatus but also in the heat treatment apparatus in general, the slip generated in the semiconductor wafer is as shown in FIG.
Further, as shown in FIG. 3, it often occurs from the peripheral portion of the semiconductor wafer 1, particularly from the contact portion between the semiconductor wafer and the supporting member. Therefore, in order to relieve the local stress due to the weight of the semiconductor wafer on the wafer supporting portion, a method of increasing the contact area to disperse the weight of the wafer is disclosed in JP-A-61-247048. That is, in order to prevent the semiconductor wafer from falling, a method of mounting the semiconductor wafer on a wafer support plate having no steps on the surface
The wafer support plate is inclined toward the pillar.
【０００９】また、ウェーハ支持板が完全な円盤状また
はリング状である場合は、真空チャックアームで半導体
ウェーハの裏面を吸着し、半導体ウェーハを支持板に移
載する際に、真空チャックアームとウェーハ支持板およ
びスリップガードリングが衝突し、ウェーハの移載に困
難を来たすという問題がある。When the wafer support plate has a perfect disk shape or a ring shape, the back surface of the semiconductor wafer is sucked by the vacuum chuck arm, and when the semiconductor wafer is transferred to the support plate, the vacuum chuck arm and the wafer are mounted. There is a problem that the support plate and the slip guard ring collide with each other, which makes it difficult to transfer the wafer.
【００１０】この問題を解決するため、ウェーハ支持板
に切れ目を設けることにより、真空チャックアームとウ
ェーハ支持板およびスリップガードリングが衝突が回避
され、ウェーハの支持板への移載が容易になることが、
特開平６−１６３４４０号に提案されている。In order to solve this problem, by providing a cut in the wafer support plate, collision between the vacuum chuck arm, the wafer support plate and the slip guard ring is avoided, and the transfer of the wafer to the support plate is facilitated. But,
It is proposed in JP-A-6-163440.
【００１１】[0011]
【発明が解決しようとする課題】熱処理中に半導体ウェ
ーハに生じるスリップを低減するために、前述の種々の
技術が公開されている。しかしながら、特開平４−２７
７６１９号に公開されている技術では、半導体ウェーハ
に対してに大きなサセプタの熱容量のために昇温・降温
速度が低下するという欠点がある。また、半導体ウェー
ハ裏面をサセプタが覆っているため、ＲＴＰ装置で用い
る場合、チャンバー下部光源からの半導体ウェーハの温
度制御ができないという問題がある。The above-mentioned various techniques have been disclosed in order to reduce the slip generated on the semiconductor wafer during the heat treatment. However, JP-A-4-27
The technique disclosed in Japanese Patent No. 7619 has a drawback that the temperature rising / falling rate is reduced due to the large heat capacity of the susceptor for a semiconductor wafer. Further, since the back surface of the semiconductor wafer is covered with the susceptor, when used in an RTP device, there is a problem that the temperature of the semiconductor wafer cannot be controlled from the light source below the chamber.
【００１２】また、一般に市販されているＲＴＰ装置の
場合は、図２に示すように、半導体ウェーハ１の３点の
支持部位置２からスリップが発生しやすいという欠点が
ある。縦型熱処理炉の場合、特開昭６１−２４７０４８
号に公開されている技術では、半導体ウェーハからの熱
放射の概念を表した図４に示すように、ウェーハ支持板
３と半導体ウェーハ１の上面が一致しておらず、ウェー
ハ支持板３にスリップガードリングとしての効果はあま
り期待できない。また、ウェーハ支持板に傾斜があるた
めに、半導体ウェーハがウェーハ支持板上で横ずれを起
こしやすく、ウェーハ裏面の傷やパーティクル発生の問
題がある。Further, in the case of a commercially available RTP device, as shown in FIG. 2, there is a drawback that slips are likely to occur from the supporting portion positions 2 at three points on the semiconductor wafer 1. In the case of a vertical heat treatment furnace, JP-A-61-247048
In the technology disclosed in the issue, as shown in FIG. 4, which illustrates the concept of heat radiation from a semiconductor wafer, the upper surfaces of the wafer supporting plate 3 and the semiconductor wafer 1 do not coincide with each other, and the wafer supporting plate 3 slips on the wafer supporting plate 3. The effect as a guard ring cannot be expected so much. In addition, since the wafer support plate is inclined, the semiconductor wafer is likely to be laterally displaced on the wafer support plate, which causes a problem of scratches and particles on the back surface of the wafer.
【００１３】また、特開平４−２７７６１９号および特
開昭６１−２４７０４８号に公開されている技術では、
ウェーハ支持板が完全な円盤状またはリング状であるた
め、真空チャックアームで半導体ウェーハを支持板に移
載する際に、真空チャックアームとウェーハ支持板およ
びスリップガードリングが衝突し、ウェーハ移載に困難
を来たすという問題がある。Further, in the techniques disclosed in JP-A-4-277619 and JP-A-61-247048,
Since the wafer support plate has a perfect disc shape or ring shape, when the semiconductor wafer is transferred to the support plate by the vacuum chuck arm, the vacuum chuck arm collides with the wafer support plate and the slip guard ring, and the wafer transfer plate is transferred. There is a problem of difficulty.
【００１４】特開平６−１６３４４０号に公開されてい
る技術では、ウェーハ支持板に切れ目を設けることで真
空チャックアームでのウェーハの支持板への移載を容易
にしているが、この技術においても、特開昭６１−２４
７０４８号に公開されている技術と同様に、ウェーハ支
持板と半導体ウェーハの上面が一致しておらず、ウェー
ハ支持板にスリップガードリングとしての効果はあまり
期待できない。また、ウェーハ支持板から半導体ウェー
ハが脱落するのを防止する機能はない。In the technique disclosed in Japanese Patent Laid-Open No. 6-163440, the wafer support plate is provided with a cut to facilitate the transfer of the wafer to the support plate by the vacuum chuck arm. , JP 61-24
Similar to the technique disclosed in No. 7048, the upper surface of the wafer support plate and the upper surface of the semiconductor wafer do not coincide with each other, and the effect of the slip guard ring on the wafer support plate cannot be expected so much. Further, there is no function of preventing the semiconductor wafer from falling off the wafer support plate.
【００１５】この発明は、半導体ウェーハの熱処理に際
してのかかる問題に鑑み、半導体ウェーハの周辺部での
スリップ発生を防止しつつ真空チャックアームを用いた
半導体ウェーハの移載を容易にでき、熱容量が小さくか
つ半導体ウェーハ裏面の傷及びパーティクルの発生を防
止できる構成からなる半導体ウェーハ支持装置の提供を
目的としている。In view of such a problem in heat treatment of a semiconductor wafer, the present invention can easily transfer the semiconductor wafer using a vacuum chuck arm while preventing the occurrence of slip in the peripheral portion of the semiconductor wafer, and has a small heat capacity. Moreover, it is an object of the present invention to provide a semiconductor wafer supporting apparatus having a structure capable of preventing the back surface of a semiconductor wafer from being scratched and from generating particles.
【００１６】[0016]
【課題を解決するための手段】発明者は、従来の問題点
を解消するため支持装置の構成に付いて種々検討した結
果、半導体ウェーハ支持装置を、一部が切れているリン
グ状または支持される半導体ウェーハと同形状で、支持
板とスリップガードリングが一体化した構造とすること
で、半導体ウェーハの周辺部でのスリップ発生を防止し
つつ真空チャックアームを用いた半導体ウェーハの移載
を容易にし、支持板に貫通孔があることにより支持板の
熱容量を小さくし、ＲＴＰ装置で用いる場合におけるチ
ャンバー下部光源による半導体ウェーハ裏面からの温度
制御を可能とし、かつ支持される半導体ウェーハの形状
にあわせて形成されているウェーハ厚の段差によって半
導体ウェーハ裏面の傷及びパーティクルを発生させるこ
となく支持板からのウェーハ脱落を防止できることを知
見し、この発明を完成した。As a result of various studies on the structure of a supporting device in order to solve the problems of the prior art, the inventor has found that the semiconductor wafer supporting device has a partially cut ring shape or a supported structure. It has the same shape as the semiconductor wafer and has a structure in which the support plate and the slip guard ring are integrated, preventing the occurrence of slips in the peripheral part of the semiconductor wafer and facilitating the transfer of the semiconductor wafer using the vacuum chuck arm. Since the supporting plate has a through hole, the heat capacity of the supporting plate can be reduced, the temperature can be controlled from the backside of the semiconductor wafer by the lower light source of the chamber when used in an RTP device, and the shape of the supported semiconductor wafer can be adjusted. From the support plate without causing scratches and particles on the back surface of the semiconductor wafer due to the difference in wafer thickness And knowledge to be able to prevent the wafer falling off, and have completed the present invention.
【００１７】すなわち、この発明は、載置する半導体ウ
ェーハの外径よりも大きな外径を有し、内径部が載置す
る半導体ウェーハ外周と相似形でかつその内径が半導体
ウェーハの外径よりも小さなリング板状であり、その円
弧の一部が切断された形状からなり、複数の脚で支持さ
れ、半導体ウェーハの外周部裏面と接触する支持板内周
部が、半導体ウェーハと接触しない支持板の周辺部の上
面よりも半導体ウェーハの厚み分だけ階段状に段差があ
る半導体ウェーハ支持装置である。That is, according to the present invention, the outer diameter of the semiconductor wafer to be mounted is larger than that of the semiconductor wafer to be mounted, and the inner diameter portion is similar to the outer periphery of the semiconductor wafer to be mounted, and the inner diameter is larger than the outer diameter of the semiconductor wafer. A support plate that is a small ring plate, is formed by cutting a part of its arc, is supported by multiple legs, and the inner periphery of the support plate that contacts the back surface of the outer periphery of the semiconductor wafer does not contact the semiconductor wafer. Is a semiconductor wafer supporting device having a step-like step by the thickness of the semiconductor wafer from the upper surface of the peripheral portion.
【００１８】また、この発明は、載置する半導体ウェー
ハの外径よりも大きな外径を有し、内径部が載置する半
導体ウェーハ外周と相似形でかつその内径が半導体ウェ
ーハの外径よりも小さなリング板状で、その円弧の一部
が切断された形状からなり、半導体ウェーハの外周部裏
面と接触する支持板内周部が、半導体ウェーハと接触し
ない支持板の周辺部の上面よりも半導体ウェーハの厚み
分だけ階段状に段差がある支持板を、所定間隔で複数並
列させてその外周部の複数箇所を支柱で支持した半導体
ウェーハ支持装置である。Further, according to the present invention, the outer diameter of the semiconductor wafer is larger than that of the semiconductor wafer to be mounted, and the inner diameter portion is similar to the outer periphery of the semiconductor wafer to be mounted, and the inner diameter thereof is larger than the outer diameter of the semiconductor wafer. It consists of a small ring plate with a part of the arc cut off, and the inner circumference of the support plate that contacts the back surface of the outer periphery of the semiconductor wafer is more semiconductor than the top surface of the periphery of the support plate that does not contact the semiconductor wafer. This is a semiconductor wafer supporting device in which a plurality of supporting plates having stepwise steps corresponding to the thickness of a wafer are juxtaposed in parallel at a predetermined interval and a plurality of locations on the outer peripheral portion are supported by columns.
【００１９】さらに、発明者は、上述の構成からなる半
導体ウェーハ支持装置において、半導体ウェーハがシリ
コンウェーハであって、支持板部材を単結晶シリコンま
たは多結晶シリコンまたは炭化シリコンによって形成し
た半導体ウェーハ支持装置を併せて提案する。Further, the inventor of the present invention is the semiconductor wafer supporting apparatus having the above-mentioned structure, wherein the semiconductor wafer is a silicon wafer and the supporting plate member is formed of single crystal silicon, polycrystalline silicon or silicon carbide. Is also proposed.
【００２０】[0020]
【発明の実施の形態】この発明による半導体ウェーハ支
持装置は、図１に示すごとく、本体を構成する径方向に
切断部１１を有するリング板状の支持板１０は、材質が
石英または炭化シリコン（ＳｉＣ）、あるいは多結晶シ
リコンまたは単結晶シリコンで作製されており、複数の
脚、例えば図示の板面に突設した３本の脚ピン１２によ
って、基台等に載せた際にピン長さだけ浮上支持され
る。BEST MODE FOR CARRYING OUT THE INVENTION In a semiconductor wafer supporting apparatus according to the present invention, as shown in FIG. 1, a ring-plate-shaped supporting plate 10 having a cutting portion 11 in a radial direction which constitutes a main body is made of quartz or silicon carbide. It is made of SiC) or polycrystalline silicon or single crystal silicon, and has a plurality of legs, for example, three leg pins 12 projecting from the plate surface shown in the figure, and only the length of the pin when mounted on a base or the like. Suspended and supported.
【００２１】支持板１０は、載置収納予定の半導体ウェ
ーハの外径より大きな外径とウェーハの外径より小さな
内径を有するリング板状部材からなり、貫通孔となる内
径部は半導体ウェーハの外周と相似形であり、図ではウ
ェーハのオリエンテーションフラット部に相当する部分
に径方向に切断部１１を設けてあり、内径部には半導体
ウェーハ１を載置収納するための段差部１３が設けてあ
り、段差（ａ）はウェーハ１厚み相当で、段差部１３内
径が半導体ウェーハ１外径より若干大きく作製され、半
導体ウェーハ１と接触する載置部１４も所定範囲の幅で
あり、半導体ウェーハ１が支持板１０内にちょうど納ま
り、半導体ウェーハ１の上面が支持板１０の上面１５と
同じ高さになる構成である。The support plate 10 is composed of a ring plate member having an outer diameter larger than the outer diameter of the semiconductor wafer to be placed and housed and an inner diameter smaller than the outer diameter of the wafer, and the inner diameter portion serving as a through hole is the outer periphery of the semiconductor wafer. In the figure, a cutting portion 11 is provided in the radial direction in a portion corresponding to the orientation flat portion of the wafer, and a step portion 13 for mounting and storing the semiconductor wafer 1 is provided in the inner diameter portion. , The step (a) corresponds to the thickness of the wafer 1, the inner diameter of the step 13 is made slightly larger than the outer diameter of the semiconductor wafer 1, and the mounting portion 14 in contact with the semiconductor wafer 1 also has a width within a predetermined range. The configuration is such that the upper surface of the semiconductor wafer 1 is just inside the support plate 10 and the upper surface 15 of the support plate 10 has the same height.
【００２２】上記の構成からなる支持板１０は、熱の輻
射効率の異なる非熱処理体の端部を上面１５幅の長さだ
け、熱処理される半導体ウェーハ１の最外周端部から遠
ざけることが可能となり、半導体ウェーハからの熱放射
の概念を表した図５に示すごとく、スリップガードリン
グの効果を持たせ、半導体ウェーハ１の周辺部からのス
リップの発生を抑制することができる。また、半導体ウ
ェーハ１の裏面の外周部を段差部１３の面接触により支
持しているため、従来のＲＴＰ装置等で問題となってい
たウェーハ支持部でのウェーハ自重ストレスによるスリ
ップの発生を低減し、かつ、ＲＴＰ装置で用いる場合の
チャンバー下部光源による半導体ウェーハ裏面からの温
度制御が可能となる。In the support plate 10 having the above-described structure, the end portions of the non-heat-treated body having different heat radiation efficiencies can be moved away from the outermost peripheral end portion of the semiconductor wafer 1 to be heat-treated by the length of the width of the upper surface 15. Therefore, as shown in FIG. 5, which shows the concept of heat radiation from the semiconductor wafer, the effect of a slip guard ring can be provided and the occurrence of slip from the peripheral portion of the semiconductor wafer 1 can be suppressed. Further, since the outer peripheral portion of the back surface of the semiconductor wafer 1 is supported by the surface contact of the step portion 13, it is possible to reduce the occurrence of slip due to the wafer's own weight stress in the wafer supporting portion, which has been a problem in the conventional RTP device or the like. In addition, when used in an RTP device, it is possible to control the temperature from the back surface of the semiconductor wafer by the light source below the chamber.
【００２３】支持板１０の寸法は、例えば、外径８イン
チ（２００ｍｍ）のウエーハの場合、リング板幅が８ｍ
ｍ〜４０ｍｍ、上面１５部の幅が５ｍｍ〜３０ｍｍ、載
置部１４幅が３ｍｍ〜１０ｍｍ、段差部１３内径は半導
体ウェーハの外径より２ｍｍ〜６ｍｍ大きいの範囲で作
製するとよい。また、支持板１０の円弧の一部分を除去
した切断部１１は、幅が１０ｍｍ〜４０ｍｍで真空チャ
ックアームを用いた半導体ウェーハの移載を容易にして
おり、前述のごとく、半導体ウェーハのオリエンテーシ
ョンフラット部に設定するのが望ましい。As for the size of the support plate 10, for example, in the case of a wafer having an outer diameter of 8 inches (200 mm), the ring plate width is 8 m.
m to 40 mm, the width of the upper surface 15 is 5 mm to 30 mm, the width of the mounting portion 14 is 3 mm to 10 mm, and the inner diameter of the step portion 13 is preferably 2 mm to 6 mm larger than the outer diameter of the semiconductor wafer. Further, the cutting portion 11 in which a part of the circular arc of the support plate 10 is removed has a width of 10 mm to 40 mm to facilitate the transfer of the semiconductor wafer using the vacuum chuck arm, and as described above, the orientation flat portion of the semiconductor wafer. It is desirable to set to.
【００２４】ウエーハ外径１２インチ（３００ｍｍ）の
場合、支持板１０の寸法は、リング板幅が１５ｍｍ〜１
７ｍｍ、上面１５部の幅が５ｍｍ〜３０ｍｍ、載置部１
４幅が１０ｍｍ〜４０ｍｍ、段差部１３内径は半導体ウ
ェーハの外径より２ｍｍ〜６ｍｍ大きいの範囲で作製す
るとよく、また、切断部１１は真空チャックアームを用
いた半導体ウェーハの移載を容易にするため、幅が１０
ｍｍ〜４０ｍｍとするが、切断箇所をオリエンテーショ
ン用ノッチ相当部に設定する他、任意の箇所に設定でき
る。When the outer diameter of the wafer is 12 inches (300 mm), the support plate 10 has a ring plate width of 15 mm to 1 mm.
7 mm, the width of the upper part 15 is 5 mm to 30 mm, and the placing part 1
4 width is 10 mm to 40 mm, and the step portion 13 inner diameter is preferably made 2 mm to 6 mm larger than the outer diameter of the semiconductor wafer, and the cutting portion 11 facilitates transfer of the semiconductor wafer using a vacuum chuck arm. Therefore, the width is 10
Although it is set to mm to 40 mm, the cutting position can be set to any position other than the orientation notch corresponding part.
【００２５】また、この発明による縦型熱処理炉用の半
導体ウェーハ支持装置は、図８に示すごとく、前述した
図１の支持板１０より脚ピン１２を除いた支持板２０の
外周の複数箇所、例えば３〜５本の支柱３０によって支
持させ、複数の支持板２０を例えば５ｍｍ〜１８ｍｍの
等間隔で並列となるように連結して構成される。As shown in FIG. 8, the semiconductor wafer supporting apparatus for the vertical heat treatment furnace according to the present invention has a plurality of positions on the outer periphery of the supporting plate 20 excluding the leg pins 12 from the supporting plate 10 of FIG. For example, it is supported by three to five support columns 30, and a plurality of support plates 20 are connected in parallel at equal intervals of, for example, 5 mm to 18 mm.
【００２６】各支持板２０の本体たる上面２５部にスリ
ップガードリングの効果を持たせ、段差部２３の載置部
２４との面接触によるウェーハ支持により半導体ウェー
ハの自重を分散させることでウェーハ支持部からのスリ
ップ発生を防止し、かつ載置される半導体ウェーハの形
状にあわせて形成されているウェーハ厚の段差部２３に
よってパーティクルを発生させることなく支持板２０か
らのウェーハ脱落を防止し、かつ、その円弧の一部分が
切断部２１で切れているので真空チャックアームを用い
た半導体ウェーハの移載を容易にしている。The upper surface 25 of the main body of each support plate 20 is provided with the effect of a slip guard ring, and the weight of the semiconductor wafer is dispersed by the wafer support by the surface contact of the stepped portion 23 with the mounting portion 24 to support the wafer. To prevent the occurrence of slips from the wafer, and to prevent the wafer from falling off the support plate 20 without generating particles due to the step portion 23 having a wafer thickness formed in accordance with the shape of the semiconductor wafer to be placed, and Since a part of the arc is cut at the cutting portion 21, the transfer of the semiconductor wafer using the vacuum chuck arm is facilitated.
【００２７】また、載置収納される半導体ウェーハがシ
リコンウェーハの場合、前述した半導体ウェーハ支持装
置の支持板１０，２０の材質を、特に、単結晶シリコン
または多結晶シリコンまたは炭化シリコン（ＳｉＣ）に
することにより、支持されるシリコンウェーハと支持板
の熱伝導率、熱膨張率、熱輻射率等の熱・光学的性質が
近くなるので、スリップ発生の抑制効果が大きくなる。When the semiconductor wafer to be placed and housed is a silicon wafer, the material of the supporting plates 10 and 20 of the semiconductor wafer supporting apparatus described above is, in particular, single crystal silicon, polycrystalline silicon or silicon carbide (SiC). By doing so, thermal and optical properties such as thermal conductivity, thermal expansion coefficient, and thermal emissivity of the supported silicon wafer and the supporting plate become close to each other, so that the effect of suppressing the occurrence of slip becomes large.
【００２８】[0028]
実施例１ ここでは、半導体ウェーハが外径８インチ（２００ｍ
ｍ）シリコンウェーハであり、熱処理炉がＲＴＰ装置で
ある場合の実施例を示す。図６の支持板１０は、厚み
（ｂ）が１．２２５ｍｍの材質が多結晶シリコンで作製
され、３つの脚ピン１２によって支えられ、スリップガ
ードリングの効果を持つ上面１５部分（ｃ）が２０ｍｍ
の長さで、シリコンウェーハの厚み分（０．７２５ｍ
ｍ）の段差を有する段差部１３のウェーハと接触する載
置部１４幅（ｄ）は５ｍｍ、厚みは０．５ｍｍで、この
段差部１３はその内径孔内に収納されるウェーハの半径
よりも２ｍｍだけ大きく作製したので、ウェーハが支持
板１０内にちょうど納まり、ウェーハの上面が支持板１
０の上面１５と同じ高さになる。また、切断部１１幅
（ｅ）は３０ｍｍである。Example 1 Here, a semiconductor wafer has an outer diameter of 8 inches (200 m
m) An example in which the silicon wafer is used and the heat treatment furnace is an RTP device is shown. The support plate 10 of FIG. 6 is made of polycrystalline silicon having a thickness (b) of 1.225 mm, is supported by three leg pins 12, and has an upper surface 15 portion (c) having a slip guard ring effect of 20 mm.
Of the thickness of the silicon wafer (0.725 m
The width (d) of the mounting portion 14 in contact with the wafer of the stepped portion 13 having the step of m) is 5 mm and the thickness is 0.5 mm, and the stepped portion 13 is larger than the radius of the wafer accommodated in the inner diameter hole. Since the wafer is made larger by 2 mm, the wafer is just accommodated in the supporting plate 10 and the upper surface of the wafer is the supporting plate 1.
It has the same height as the upper surface 15 of 0. The width (e) of the cut portion 11 is 30 mm.
【００２９】支持板１０をかかる構成となすことによっ
て、シリコンウェーハの周辺部からのスリップの発生、
従来、ＲＴＰ装置等で問題となっていたウェーハ支持部
でのウェーハ自重ストレスによるスリップの発生を大幅
に低減することができ、従来の３点ピン支持、図４に示
すごときリング板に載置するものに比較して、スリップ
の発生がなかった。また、ＲＴＰ装置で用いる場合のチ
ャンバー下部光源による半導体ウェーハ裏面からの温度
制御が可能であることを確認した。By the support plate 10 having such a structure, the occurrence of slip from the peripheral portion of the silicon wafer,
It is possible to significantly reduce the occurrence of slip due to the wafer's own weight stress at the wafer supporting portion, which has been a problem in the conventional RTP device, and the conventional three-point pin support is mounted on the ring plate as shown in FIG. There was no slip compared to the one. Further, it was confirmed that the temperature control from the back surface of the semiconductor wafer was possible by the light source at the bottom of the chamber when used in the RTP device.
【００３０】実施例２ 図７の支持板１０は、図１の実施例１のものと同寸法の
ＲＴＰ装置用のものであるが、スリップガードリングの
効果を持つ上面１５部と半導体ウェーハと接触する載置
部１４部分を別部材の接着されており、上面１５部厚み
（ａ）が半導体ウェーハと同じ厚みで、載置部１４部分
厚みが０．５ｍｍで両者の接合部厚みは１．２２５ｍｍ
である。スリップガードリングの効果を持つ上面１５部
分が載置される半導体ウェーハと同じ厚みになっている
ことで、その支持される半導体ウェーハとスリップガー
ドリングの熱容量等の特性がより近付き、スリップ発生
防止効果が増すことを確認した。Example 2 The support plate 10 of FIG. 7 is for an RTP apparatus having the same size as that of the example 1 of FIG. 1, but the upper surface 15 having the effect of a slip guard ring is in contact with the semiconductor wafer. The mounting portion 14 portion is bonded to another member, the upper surface 15 portion thickness (a) is the same as that of the semiconductor wafer, the mounting portion 14 portion thickness is 0.5 mm, and the joining portion thickness is 1.225 mm.
It is. Since the upper surface portion 15 having the effect of the slip guard ring has the same thickness as the semiconductor wafer to be mounted, the characteristics such as the heat capacity of the supported semiconductor wafer and the slip guard ring become closer to each other, and the slip occurrence prevention effect It was confirmed that
【００３１】実施例３ 図８は８インチ（２００ｍｍ）外径のシリコンウェーハ
を縦型バッチ式熱処理炉で熱処理する際の半導体ウェー
ハ支持装置を示している、各支持板２０は実施例１また
は実施例２の支持板１０と同様構成であるが、スリップ
ガードリング部の上面２５の長さが８ｍｍの支持板２０
を複数枚有していて、各支持板２０が３本の支柱３０に
よって６ｍｍの等間隔をあけて保持、連結されている。Example 3 FIG. 8 shows a semiconductor wafer supporting apparatus for heat-treating a silicon wafer having an outer diameter of 8 inches (200 mm) in a vertical batch type heat treatment furnace. A support plate 20 having the same structure as the support plate 10 of Example 2, but having an upper surface 25 of the slip guard ring portion having a length of 8 mm.
, And each support plate 20 is held and connected by three columns 30 at equal intervals of 6 mm.
【００３２】[0032]
【発明の効果】この発明による半導体ウェーハ支持装置
は、実施例に明らかなように、半導体熱処理装置におい
て、半導体ウェーハの周辺部および支持部分でのスリッ
プ発生を防止し、真空チャックアームを用いた半導体ウ
ェーハの移載を容易にし、支持板からのウェーハ脱落を
防止し、また、支持板の熱容量が小さいために昇温、降
温速度が低下せず、ＲＴＰ装置で用いる場合におけるチ
ャンバー下部光源による半導体ウェーハ裏面からの温度
制御を可能とする優れた効果がある。As is apparent from the embodiments, the semiconductor wafer supporting apparatus according to the present invention prevents the occurrence of slips at the peripheral portion and the supporting portion of the semiconductor wafer in the semiconductor heat treatment apparatus, and uses a semiconductor device using a vacuum chuck arm. A semiconductor wafer with a chamber lower light source for facilitating the transfer of wafers, preventing the wafers from falling off the supporting plate, and not lowering the temperature rising and cooling rates due to the small heat capacity of the supporting plate when used in an RTP device. It has an excellent effect of enabling temperature control from the back surface.
【図１】この発明による半導体ウェーハ支持装置の要部
構成を示す説明図であり、Ａは縦断面図、Ｂは上面図で
ある。FIG. 1 is an explanatory view showing a main part configuration of a semiconductor wafer supporting apparatus according to the present invention, in which A is a longitudinal sectional view and B is a top view.
【図２】３点ピン支持方式のＲＴＰ装置で発生するスリ
ップの概念を示す半導体ウェーハの説明図である。FIG. 2 is an explanatory diagram of a semiconductor wafer showing a concept of slip that occurs in a three-point pin support type RTP device.
【図３】縦型拡散炉で発生するスリップの概念を示す半
導体ウェーハの説明図である。FIG. 3 is an explanatory diagram of a semiconductor wafer showing a concept of slip generated in a vertical diffusion furnace.
【図４】ウェーハ支持板（スリップガードリング部）と
半導体ウェーハの上面が一致していない場合の半導体ウ
ェーハからの熱放射の概念を示す説明図である。FIG. 4 is an explanatory diagram showing the concept of heat radiation from the semiconductor wafer when the wafer support plate (slip guard ring portion) and the upper surface of the semiconductor wafer do not coincide.
【図５】この発明による半導体ウェーハ支持装置を用い
た場合の半導体ウェーハからの熱放射の概念を示す説明
図である。FIG. 5 is an explanatory view showing the concept of heat radiation from a semiconductor wafer when the semiconductor wafer supporting device according to the present invention is used.
【図６】この発明による半導体ウェーハ支持装置の要部
構成を示す説明図であり、Ａは縦断面図、Ｂは上面図で
ある。6A and 6B are explanatory views showing a main part configuration of a semiconductor wafer supporting apparatus according to the present invention, in which A is a longitudinal sectional view and B is a top view.
【図７】この発明による他の半導体ウェーハ支持装置の
要部構成を示す説明図であり、Ａは縦断面図、Ｂは上面
図である。7A and 7B are explanatory views showing a main part configuration of another semiconductor wafer supporting apparatus according to the present invention, in which A is a longitudinal sectional view and B is a top view.
【図８】この発明による半導体ウェーハ支持装置の構成
を示す斜視説明図である。FIG. 8 is a perspective explanatory view showing a configuration of a semiconductor wafer supporting device according to the present invention.
１ 半導体ウェーハ ２ 支持部位置 ３ ウェーハ支持板 １０，２０ 支持板 １１，２１ 切断部 １２ 脚ピン １３，２３ 段差部 １４，２４ 載置部 １５，２５ 上面 ３０ 支柱 1 Semiconductor Wafer 2 Support Position 3 Wafer Support Plate 10,20 Support Plate 11,21 Cutting Section 12 Leg Pins 13,23 Stepped Section 14,24 Mounting Section 15,25 Top 30 Pillar
Claims (3)
きな外径を有し、内径部が載置する半導体ウェーハ外周
と相似形でかつその内径が半導体ウェーハの外径よりも
小さなリング板状で、その円弧の一部が切断された形状
からなり、複数の脚で支持され、半導体ウェーハの外周
部裏面と接触する支持板内周部が、半導体ウェーハと接
触しない支持板の周辺部の上面よりも半導体ウェーハの
厚み分だけ階段状に段差がある半導体ウェーハ支持装
置。1. A ring plate shape having an outer diameter larger than that of a semiconductor wafer to be mounted, and an inner diameter portion having a shape similar to the outer periphery of the semiconductor wafer to be mounted and having an inner diameter smaller than the outer diameter of the semiconductor wafer. The inner circumference of the support plate, which is formed by cutting a part of the arc and is supported by a plurality of legs, and which contacts the back surface of the outer circumference of the semiconductor wafer, is the upper surface of the periphery of the support plate that does not contact the semiconductor wafer. A semiconductor wafer support device that has a step-like step by the thickness of the semiconductor wafer.
きな外径を有し、内径部が載置する半導体ウェーハ外周
と相似形でかつその内径が半導体ウェーハの外径よりも
小さなリング板状で、その円弧の一部が切断された形状
からなり、半導体ウェーハの外周部裏面と接触する支持
板内周部が、半導体ウェーハと接触しない支持板の周辺
部の上面よりも半導体ウェーハの厚み分だけ階段状に段
差がある支持板を、所定間隔で複数並列させてその外周
部の複数箇所を支柱で支持した半導体ウェーハ支持装
置。2. A ring plate shape having an outer diameter larger than that of a semiconductor wafer to be mounted, an inner diameter portion of which is similar to the outer periphery of the semiconductor wafer to be mounted, and whose inner diameter is smaller than the outer diameter of the semiconductor wafer. The part of the arc is formed by cutting a part of the arc, and the inner periphery of the support plate that contacts the back surface of the outer periphery of the semiconductor wafer is equal to the thickness of the semiconductor wafer than the upper surface of the periphery of the support plate that does not contact the semiconductor wafer. A semiconductor wafer support device in which a plurality of support plates each having only a step in a stepped manner are arranged in parallel at predetermined intervals, and a plurality of outer peripheral portions are supported by columns.
ウェーハがシリコンウェーハであって、支持板部材を単
結晶シリコンまたは多結晶シリコンまたは炭化シリコン
によって形成した半導体ウェーハ支持装置。3. The semiconductor wafer supporting device according to claim 1, wherein the semiconductor wafer is a silicon wafer, and the supporting plate member is formed of single crystal silicon, polycrystalline silicon, or silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2188996A JPH09199437A (en) | 1996-01-12 | 1996-01-12 | Semiconductor wafer supporting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2188996A JPH09199437A (en) | 1996-01-12 | 1996-01-12 | Semiconductor wafer supporting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09199437A true JPH09199437A (en) | 1997-07-31 |
Family
ID=12067685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2188996A Pending JPH09199437A (en) | 1996-01-12 | 1996-01-12 | Semiconductor wafer supporting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09199437A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990074254A (en) * | 1998-03-09 | 1999-10-05 | 윤종용 | Oven with hot plate to prevent wafer slip |
| JP2000058470A (en) * | 1998-08-07 | 2000-02-25 | Ushio Inc | Gourd ring of light irradiation system heating equipment |
| JP2002503884A (en) * | 1998-02-11 | 2002-02-05 | アプライド マテリアルズ インコーポレイテッド | Substrate support for heat treatment chamber |
| US6799940B2 (en) | 2002-12-05 | 2004-10-05 | Tokyo Electron Limited | Removable semiconductor wafer susceptor |
| KR100475011B1 (en) * | 1997-09-22 | 2005-05-16 | 삼성전자주식회사 | Thin film formation apparatus, method for manufacturing the same and for forming a thin film using the same |
| US7022192B2 (en) | 2002-09-04 | 2006-04-04 | Tokyo Electron Limited | Semiconductor wafer susceptor |
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| JP2006245252A (en) * | 2005-03-03 | 2006-09-14 | Dainippon Printing Co Ltd | Jig for placing silicon wafer, and surface shape detecting method for fine structure |
| JP2007265971A (en) * | 2006-02-28 | 2007-10-11 | Sii Nanotechnology Inc | Wafer holder and sample preparation device |
| JP2010034372A (en) * | 2008-07-30 | 2010-02-12 | Sumco Corp | Susceptor for vapor deposition apparatus, and vapor deposition apparatus |
| US7661544B2 (en) | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
| KR20170012359A (en) * | 2014-05-21 | 2017-02-02 | 어플라이드 머티어리얼스, 인코포레이티드 | Thermal processing susceptor |
-
1996
- 1996-01-12 JP JP2188996A patent/JPH09199437A/en active Pending
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|---|---|---|---|---|
| KR100475011B1 (en) * | 1997-09-22 | 2005-05-16 | 삼성전자주식회사 | Thin film formation apparatus, method for manufacturing the same and for forming a thin film using the same |
| JP2002503884A (en) * | 1998-02-11 | 2002-02-05 | アプライド マテリアルズ インコーポレイテッド | Substrate support for heat treatment chamber |
| KR19990074254A (en) * | 1998-03-09 | 1999-10-05 | 윤종용 | Oven with hot plate to prevent wafer slip |
| JP2000058470A (en) * | 1998-08-07 | 2000-02-25 | Ushio Inc | Gourd ring of light irradiation system heating equipment |
| KR100574915B1 (en) * | 1999-04-06 | 2006-04-28 | 삼성전자주식회사 | Plasma chamber for preventing a abnormal abrasion of focus ring |
| US7022192B2 (en) | 2002-09-04 | 2006-04-04 | Tokyo Electron Limited | Semiconductor wafer susceptor |
| US6799940B2 (en) | 2002-12-05 | 2004-10-05 | Tokyo Electron Limited | Removable semiconductor wafer susceptor |
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| JP2006245252A (en) * | 2005-03-03 | 2006-09-14 | Dainippon Printing Co Ltd | Jig for placing silicon wafer, and surface shape detecting method for fine structure |
| JP2007265971A (en) * | 2006-02-28 | 2007-10-11 | Sii Nanotechnology Inc | Wafer holder and sample preparation device |
| US7661544B2 (en) | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
| JP2010034372A (en) * | 2008-07-30 | 2010-02-12 | Sumco Corp | Susceptor for vapor deposition apparatus, and vapor deposition apparatus |
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| US11848226B2 (en) | 2014-05-21 | 2023-12-19 | Applied Materials, Inc. | Thermal processing susceptor |
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