JPH06331339A - Method and device for measuring deformation of thin plate - Google Patents
Method and device for measuring deformation of thin plateInfo
- Publication number
- JPH06331339A JPH06331339A JP11953193A JP11953193A JPH06331339A JP H06331339 A JPH06331339 A JP H06331339A JP 11953193 A JP11953193 A JP 11953193A JP 11953193 A JP11953193 A JP 11953193A JP H06331339 A JPH06331339 A JP H06331339A
- Authority
- JP
- Japan
- Prior art keywords
- thin plate
- liquid
- deformation
- plate
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Arrangements Characterized By The Use Of Fluids (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、自重によってそりや撓
み等の変形が生じやすいセラミック基板や半導体ウエハ
等の薄板の本来の変形、即ち薄板の自重による影響を極
力抑えた薄板本来の変形を測定する薄板の変形測定方法
及びその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides an original deformation of a thin plate such as a ceramic substrate or a semiconductor wafer which is apt to be deformed by warping or bending due to its own weight, that is, an original deformation of the thin plate in which the influence of the own weight of the thin plate is suppressed as much as possible. The present invention relates to a thin plate deformation measuring method and apparatus.
【0002】[0002]
【従来の技術】従来、セラミック基板等の薄板の変形を
測定する場合は、被測定物を大気中にセットして行なう
のが一般的であった。2. Description of the Related Art Conventionally, in the case of measuring the deformation of a thin plate such as a ceramic substrate, it has been general to set an object to be measured in the atmosphere.
【0003】具体的な薄板のセット方法としては、測定
対象の薄板を大気中で平面上に真空吸着、電解チャッ
ク、機械式チャック等で固定する方法や、薄板を立てて
真空吸着等で固定する方法や、平面上にフリーの状態で
セットする方法や、薄板を三点支持する方法等が取られ
ていた。As a specific method for setting a thin plate, a thin plate to be measured is fixed on a flat surface in the atmosphere by vacuum suction, an electrolytic chuck, a mechanical chuck, or a thin plate is stood and fixed by vacuum suction or the like. A method, a method of setting it on a flat surface in a free state, a method of supporting a thin plate at three points, and the like have been adopted.
【0004】なお、測定は、機械式、電気式、光学式等
の測定装置を用い、薄板表面の変位量(そり等の変形
量)を測定する。For the measurement, a mechanical, electrical, optical, or other measuring device is used to measure the amount of displacement of the surface of the thin plate (the amount of deformation such as warpage).
【0005】[0005]
【発明が解決しようとする課題】ところが、薄板を前述
のように大気中においてセットすると、本来薄板が持っ
ている変形と共に薄板の自重によっても変形してしま
う。さらに、薄板のセットの仕方でも測定値にバラツキ
が生じてしまい、薄板本来の変形を正確に測定すること
ができないという問題点がある。However, when the thin plate is set in the atmosphere as described above, the thin plate is deformed by its own weight as well as the original deformation of the thin plate. Further, there is a problem in that even if the thin plates are set, the measured values vary, and the original deformation of the thin plates cannot be accurately measured.
【0006】本発明は前記問題点に鑑みてなされたもの
で、薄板の持つ本来の変形だけをより正確に測定するこ
とができる薄板の変形測定方法及びその装置を提供する
ことを目的とする。The present invention has been made in view of the above problems, and an object thereof is to provide a thin plate deformation measuring method and apparatus capable of more accurately measuring only the original deformation of the thin plate.
【0007】[0007]
【課題を解決するための手段】上記課題を解決するため
に本発明方法は、測定対象となる薄板を、当該薄板とほ
ぼ同じ比重の液体中に、またはその液体界面まで沈め、
当該薄板の自重による影響を抑えて変形を測定すること
を特徴とする。In order to solve the above-mentioned problems, the method of the present invention comprises submerging a thin plate to be measured in a liquid having a specific gravity substantially the same as that of the thin plate or to its liquid interface,
It is characterized in that the deformation is measured while suppressing the influence of the weight of the thin plate.
【0008】また、本発明装置は、測定対象となる薄板
とほぼ同じ比重を有し、当該薄板をそれ自身の自重によ
る影響を抑えた状態で支持する液体と、当該液体によっ
て支持された薄板の変形を測定する測定器とから構成し
たことを特徴とする。The apparatus of the present invention has a liquid having substantially the same specific gravity as the thin plate to be measured and supporting the thin plate while suppressing the influence of its own weight and a thin plate supported by the liquid. It is characterized by being configured with a measuring device for measuring deformation.
【0009】[0009]
【作用】薄板を、その薄板とほぼ同じ比重の液体に沈め
ることで、薄板の自重による影響を抑えることができ
る。これにより、薄板の本来の変形を正確に測定するこ
とができる。By submerging the thin plate in a liquid having substantially the same specific gravity as the thin plate, the influence of the weight of the thin plate can be suppressed. Thereby, the original deformation of the thin plate can be accurately measured.
【0010】[0010]
【実施例】以下、本発明の実施例を添付図面を参照しな
がら説明する。Embodiments of the present invention will be described below with reference to the accompanying drawings.
【0011】図1中の1は液体容器で、この液体容器1
に液体2が注入されている。この液体2としては被測定
物である薄板3とほぼ同じ比重の液体を用いる。正確に
は、液体2の比重は薄板3の比重よりも多少軽い程度に
設定する。このように、液体2の比重を薄板3とほぼ同
様にすると、薄板3をこの液体2内に沈めることで薄板
3に浮力が作用して相対的に重力の影響を低減すること
ができ、結果的に薄板3の自重による変形等の影響を最
小限に抑えることができる。なお、薄板3としては、セ
ラミック基板や半導体ウエハ等のようにそりや撓み等の
変形が生じやすい薄板に適用できる。このとき、液体2
は測定する薄板3の材料の比重に合せて適宜選択する。Reference numeral 1 in FIG. 1 denotes a liquid container.
Liquid 2 is injected into the. As the liquid 2, a liquid having substantially the same specific gravity as the thin plate 3 which is the object to be measured is used. To be precise, the specific gravity of the liquid 2 is set to be slightly lighter than that of the thin plate 3. As described above, when the specific gravity of the liquid 2 is made substantially the same as that of the thin plate 3, by immersing the thin plate 3 in the liquid 2, buoyancy acts on the thin plate 3 and the influence of gravity can be relatively reduced. Therefore, the influence of deformation of the thin plate 3 due to its own weight can be minimized. It should be noted that the thin plate 3 can be applied to a thin plate such as a ceramic substrate or a semiconductor wafer which is easily deformed such as warped or bent. At this time, the liquid 2
Is appropriately selected according to the specific gravity of the material of the thin plate 3 to be measured.
【0012】4は薄板3を液体2内から支持する支持棒
で、液体2の上側面である液体界面に薄板3の上側面(
測定面) を残し他の部分を沈めた状態でこの薄板3を支
持する。Reference numeral 4 denotes a support rod for supporting the thin plate 3 from the inside of the liquid 2. The upper surface of the thin plate 3 is attached to the liquid interface which is the upper surface of the liquid 2.
The thin plate 3 is supported in a state where the other surface is sunk while leaving the measurement surface).
【0013】5は液体2に沈めて支持された薄板3の変
形量を測定する測定器で、液体容器1の上側位置に設け
られている。Reference numeral 5 is a measuring device for measuring the amount of deformation of the thin plate 3 submerged in and supported by the liquid 2, and is provided at a position above the liquid container 1.
【0014】以上の装置を用いた薄板の変形測定方法は
次のようになる。The method for measuring the deformation of a thin plate using the above apparatus is as follows.
【0015】測定対象となる薄板3を、その上側面が液
体容器1内の液体界面と面一になるまで沈めて薄板3自
身の自重による影響を抑えて支持棒4に載置する。この
状態で薄板3のそり等の変形を測定器5で測定する。The thin plate 3 to be measured is sunk until its upper surface becomes flush with the liquid interface in the liquid container 1 and placed on the support rod 4 while suppressing the influence of the own weight of the thin plate 3 itself. In this state, the warp or other deformation of the thin plate 3 is measured by the measuring device 5.
【0016】次に、具体的数値を用いて説明する。Next, description will be made using specific numerical values.
【0017】測定器5は光学式を用いた。比重5.316 の
GaAsインゴットより切断したφ3 インチ、厚さ800
μmのウエハを、その加工歪層を取り除いて、液体2中
に沈めて支持棒4に載置する。液体2としては比重4.9
のHCO3 Tl+C3 H2 O2 Tl2 +H2 Oを用い
る。そして、測定器5でウエハの表面の変形(そり)を
測定した。The measuring device 5 is of an optical type. Φ3 inch, thickness 800 cut from GaAs ingot with specific gravity 5.316
The processing strain layer is removed from the wafer having a thickness of μm, and the wafer is submerged in the liquid 2 and placed on the support rod 4. Specific gravity of liquid 4.9
HCO 3 Tl + C 3 H 2 O 2 Tl 2 + H 2 O are used. Then, the deformation (warpage) of the surface of the wafer was measured by the measuring device 5.
【0018】一方、ウエハに対して比重の小さい大気中
においても3点支持にてセットしたウエハの変形(そ
り)を測定した。On the other hand, the deformation (warpage) of the wafer set by three-point support was measured even in the atmosphere having a small specific gravity with respect to the wafer.
【0019】この結果、ウエハ自身の自重の影響を除い
たそり形状とほぼ等しいと考えられるインゴット切断断
面のそりの値と各測定結果とを比較してみると、インゴ
ット切断端面でのそりの値は4 μm、大気中で測定した
値は2.5 μmであるのに対して、HCO3 Tl+C3 H
2 O2 Tl2 +H2 O中で測定した値は3.8 μmとなっ
た。つまり、HCO3 Tl+C3 H2 O2 Tl2 +H2
O中での測定値がインゴット切断断面のそりの値、即ち
本来のそり形状に近い値を示した。As a result, when the warp value of the ingot cut section which is considered to be almost equal to the warp shape excluding the influence of the weight of the wafer itself and each measurement result are compared, the warp value at the ingot cut end face is compared. Is 4 μm and the value measured in the atmosphere is 2.5 μm, whereas HCO 3 Tl + C 3 H
The value measured in 2 O 2 Tl 2 + H 2 O was 3.8 μm. That is, HCO 3 Tl + C 3 H 2 O 2 Tl 2 + H 2
The measured value in O showed the value of the warp of the ingot cut section, that is, the value close to the original shape of the warp.
【0020】以上のように、薄板3を液体2中に沈めて
そり等を測定することで、薄板3に浮力が働いて薄板3
自身の自重による変形を極力抑えることが可能になり、
薄板3自身が持つ本来の変形のみを正確に測定すること
ができる。As described above, by immersing the thin plate 3 in the liquid 2 and measuring the warpage and the like, buoyancy acts on the thin plate 3 and the thin plate 3
It is possible to suppress deformation due to its own weight as much as possible,
Only the original deformation of the thin plate 3 itself can be accurately measured.
【0021】なお、前記実施例では、被測定物を液体の
上側表面に浮かべて測定したが、測定器として液体中に
沈めて測定可能なものを用いたり、液体中に沈めた被測
定物を液体の外部から測定できる測定器を用いること
で、被測定物を液体中に完全に沈めることができ、より
自重の影響を受けずに測定をすることができる。In the above-described embodiment, the object to be measured is floated on the upper surface of the liquid for measurement, but a measuring instrument that can be immersed in the liquid for measurement or an object to be measured immersed in the liquid is used. By using a measuring device that can measure from the outside of the liquid, the object to be measured can be completely submerged in the liquid, and the measurement can be performed without being more affected by its own weight.
【0022】測定器5としては機械式、電気式、光学式
等の各種の方式の測定機器を用いることができる。As the measuring device 5, various types of measuring devices such as mechanical type, electric type and optical type can be used.
【0023】液体2の比重は薄板3の比重よりも多少軽
い程度に設定したが、多少重い程度や正確に一致させる
等の他の態様に設定してもよい。Although the specific gravity of the liquid 2 is set to be slightly lighter than the specific gravity of the thin plate 3, it may be set to some other weight, such as slightly heavier or more accurately.
【0024】また、液体2としては比重4.9 のHCO3
Tl+C3 H2 O2 Tl2 +H2 Oを用いたが、特にシ
リコン(比重2.33)においてはCH 3I(比重2.28)中
での測定が良好な値を示す。The liquid 2 is HCO 3 having a specific gravity of 4.9.
Tl + C 3 H 2 O 2 Tl 2 + H 2 O was used, and particularly in silicon (specific gravity 2.33), measurement in CH 3 I (specific gravity 2.28) shows a good value.
【0025】[0025]
【発明の効果】以上詳述したように本発明の薄板の変形
測定方法及びその装置によれば、薄板を液体中に沈めて
そり等を測定することで、薄板自身の自重による変形を
極力抑えることが可能になり、薄板自身が持つ本来の変
形のみを正確に測定することができる。As described above in detail, according to the thin plate deformation measuring method and apparatus of the present invention, the thin plate is submerged in the liquid and the warpage and the like are measured, so that the deformation of the thin plate itself due to its own weight is suppressed as much as possible. Therefore, it is possible to accurately measure only the original deformation of the thin plate itself.
【図1】本発明に係る薄板の変形測定装置を示す概略構
成図である。FIG. 1 is a schematic configuration diagram showing a thin plate deformation measuring apparatus according to the present invention.
1 液体容器 2 液体 3 薄板 4 支持棒 5 測定器 1 Liquid container 2 Liquid 3 Thin plate 4 Support rod 5 Measuring instrument
Claims (2)
じ比重の液体中に、またはその液体界面まで沈め、当該
薄板の自重による影響を抑えて変形を測定することを特
徴とする薄板の変形測定方法。1. A thin plate, characterized in that a thin plate to be measured is immersed in a liquid having substantially the same specific gravity as that of the thin plate or to the liquid interface thereof to measure the deformation while suppressing the influence of the own weight of the thin plate. Deformation measurement method.
し、当該薄板をそれ自身の自重による影響を抑えた状態
で支持する液体と、当該液体によって支持された薄板の
変形を測定する測定器とから構成したことを特徴とする
薄板の変形測定装置。2. A liquid having a specific gravity substantially the same as that of a thin plate to be measured and supporting the thin plate while suppressing the influence of its own weight and a deformation of the thin plate supported by the liquid. An apparatus for measuring deformation of a thin plate, characterized by being configured with a container.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11953193A JPH06331339A (en) | 1993-05-21 | 1993-05-21 | Method and device for measuring deformation of thin plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11953193A JPH06331339A (en) | 1993-05-21 | 1993-05-21 | Method and device for measuring deformation of thin plate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06331339A true JPH06331339A (en) | 1994-12-02 |
Family
ID=14763596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11953193A Pending JPH06331339A (en) | 1993-05-21 | 1993-05-21 | Method and device for measuring deformation of thin plate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06331339A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1907791A2 (en) * | 2005-07-27 | 2008-04-09 | Corning Incorporated | Apparatus and method for measuring a glass sheet |
EP1915323A1 (en) * | 2005-07-27 | 2008-04-30 | Corning Incorporated | Process and apparatus for measuring the shape of an article |
CN103499318A (en) * | 2013-10-21 | 2014-01-08 | 中国科学院光电技术研究所 | Method for measuring dead weight deformation of optical element |
WO2019183023A1 (en) * | 2018-03-19 | 2019-09-26 | Tokyo Electron Limited | Substrate holding apparatus and method for shape metrology |
US10514252B2 (en) | 2016-04-01 | 2019-12-24 | Rde Company S.R.L. | Shape-detecting machine for slender articles |
US10890440B2 (en) | 2016-04-01 | 2021-01-12 | Rde Company S.R.L. | 3D floating support system and related geometry-detecting machine of slender articles |
-
1993
- 1993-05-21 JP JP11953193A patent/JPH06331339A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1907791A2 (en) * | 2005-07-27 | 2008-04-09 | Corning Incorporated | Apparatus and method for measuring a glass sheet |
EP1915323A1 (en) * | 2005-07-27 | 2008-04-30 | Corning Incorporated | Process and apparatus for measuring the shape of an article |
EP1915323A4 (en) * | 2005-07-27 | 2009-09-30 | Corning Inc | Process and apparatus for measuring the shape of an article |
EP1907791A4 (en) * | 2005-07-27 | 2009-12-23 | Corning Inc | Apparatus and method for measuring a glass sheet |
KR101294450B1 (en) * | 2005-07-27 | 2013-08-07 | 코닝 인코포레이티드 | Apparatus and method for measuring a glass sheet |
CN103499318A (en) * | 2013-10-21 | 2014-01-08 | 中国科学院光电技术研究所 | Method for measuring dead weight deformation of optical element |
US10890440B2 (en) | 2016-04-01 | 2021-01-12 | Rde Company S.R.L. | 3D floating support system and related geometry-detecting machine of slender articles |
US10514252B2 (en) | 2016-04-01 | 2019-12-24 | Rde Company S.R.L. | Shape-detecting machine for slender articles |
US11002532B2 (en) | 2016-04-01 | 2021-05-11 | Rde Company S.R.L. | 3D floating support system and related geometry-detecting machine of slender articles |
CN111699548A (en) * | 2018-03-19 | 2020-09-22 | 东京毅力科创株式会社 | Substrate holding apparatus and shape measuring method |
WO2019183023A1 (en) * | 2018-03-19 | 2019-09-26 | Tokyo Electron Limited | Substrate holding apparatus and method for shape metrology |
JP2021518664A (en) * | 2018-03-19 | 2021-08-02 | 東京エレクトロン株式会社 | Board holding device and method for shape metrology |
US11247309B2 (en) | 2018-03-19 | 2022-02-15 | Tokyo Electron Limited | Substrate holding apparatus and method for shape metrology |
CN111699548B (en) * | 2018-03-19 | 2023-12-05 | 东京毅力科创株式会社 | Substrate holding apparatus and shape measurement method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0134438A2 (en) | Vacuum and/or electrostatic pinchuck for holding semiconductor wafers or other flat electrical components and method for making the same | |
US5736061A (en) | Semiconductor element mount and producing method therefor | |
JPH06331339A (en) | Method and device for measuring deformation of thin plate | |
Lathlaen et al. | Stress in Thin Films of Silane Vapor‐Deposited Silicon Dioxide | |
Kinbara et al. | Mechanical properties and deterioration of MgF2 thin films | |
JP6979922B2 (en) | Electronic balance and wafer weight measurement method | |
US11484993B2 (en) | Substrate holding apparatus and method for shape metrology | |
US20090148256A1 (en) | Support Pin with Dome Shaped Upper Surface | |
JP7365800B2 (en) | stage equipment | |
TWI738585B (en) | Improved device for drying semiconductor substrates | |
JPS60251620A (en) | X-ray mask | |
JPH0513550A (en) | Substrate transfer fork | |
JP2560011Y2 (en) | Substrate cassette | |
US20230008740A1 (en) | Device for drying semiconductor substrates | |
JPS58182822A (en) | Removing apparatus for internal stress in thin film | |
JPH0270077A (en) | Method for chemically etching platelike body | |
JPH0626944A (en) | Method for measuring stress of thin film, and method and device for manufacturing test piece for stress measurement | |
JPH0320780Y2 (en) | ||
JP2976615B2 (en) | Etching method and etching apparatus | |
JPH01320447A (en) | Chip for measuring film thickness of thin film | |
JP2006066678A (en) | Semiconductor manufacturing device, maintenance method therefor, and manufacturing method of semiconductor device | |
JPH0258329A (en) | Manufacture of semiconductor device | |
JPH02173754A (en) | Dip coating method | |
JPH0328051B2 (en) | ||
JPH1064876A (en) | Device for manufacturing semiconductor device, and etching method and etching device |