JPS58182822A - Removing apparatus for internal stress in thin film - Google Patents
Removing apparatus for internal stress in thin filmInfo
- Publication number
- JPS58182822A JPS58182822A JP6527882A JP6527882A JPS58182822A JP S58182822 A JPS58182822 A JP S58182822A JP 6527882 A JP6527882 A JP 6527882A JP 6527882 A JP6527882 A JP 6527882A JP S58182822 A JPS58182822 A JP S58182822A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- wafer
- internal stress
- jig
- screw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000003825 pressing Methods 0.000 abstract description 2
- 238000005452 bending Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 15
- 241000257465 Echinoidea Species 0.000 description 7
- 238000005336 cracking Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体ウェハの上に形成される内部応力除去装
置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to internal stress relief devices formed on semiconductor wafers.
一般に、半導体製品の製造過程ておいて半導体ウェハの
上に薄膜を形成する場合、熱収縮係数の差異等に起因し
て薄膜に内部応力が発生することが知らｎている。この
ような内部応力が発生すると、薄膜の剥れやクラック等
を生じる原因になってしまう。Generally, when a thin film is formed on a semiconductor wafer in the process of manufacturing a semiconductor product, it is known that internal stress is generated in the thin film due to differences in thermal contraction coefficients and the like. If such internal stress occurs, it may cause peeling or cracking of the thin film.
特に、半導体素子の多層化、高集積度化に伴なって、薄
膜の剥ｔやクラック等が非常に大きな問題となってきて
おり、製品の歩留り低下をひき起こす結果となる。In particular, as semiconductor devices become more multi-layered and highly integrated, thin film peeling, cracking, etc. have become a serious problem, resulting in a decrease in product yield.
したがって、本発明の目的は、前記従来技術の問題点を
！消し、形成後の薄膜内に生じる内部応力な簡琳かつ有
効に除去することのできる薄膜の内部応力除去装置を提
供することにある。Therefore, it is an object of the present invention to solve the problems of the prior art. An object of the present invention is to provide a device for eliminating internal stress of a thin film, which can easily and effectively remove the internal stress generated within the thin film after it has been formed.
この目的を達成するため、本発明は、形成後の薄膜内に
生じる内部応力を打ち消す方向に半導体ウニ・・を予め
反らせた状態で薄膜の形成を行うものである。In order to achieve this object, the present invention performs the formation of a thin film in a state in which the semiconductor sea urchin is previously warped in a direction that cancels out the internal stress generated within the thin film after it has been formed.
以下、本発明を図面に示す実施例にしたがって絆細に説
明する。Hereinafter, the present invention will be explained in detail according to embodiments shown in the drawings.
第１図は本発明による内部応力除去装置を適用できる薄
膜形成装置の一例の概略説明図でわる。FIG. 1 is a schematic explanatory diagram of an example of a thin film forming apparatus to which the internal stress relieving apparatus according to the present invention can be applied.
この薄膜形成装置において、真窒槽ｌの中にｉま、たと
えばアルミニウム（Ａ１）材料のターゲット２、および
ウニ・・３を取り付けるウニ・・治具４が配置され、こ
の真空層１内（まバルブ５を有する高真空ポンプ６によ
り真空状態になっている。本装置において、電源７によ
りターゲット２に高電圧を印加すると、ターゲット２の
材料がウニ・・３上に薄膜として付着し、薄膜の形成が
行われる。In this thin film forming apparatus, a target 2 made of aluminum (A1) material, for example, and a sea urchin jig 4 for attaching a sea urchin 3 are arranged in a nitrogen tank l, A vacuum state is created by a high vacuum pump 6 with a power source 7. In this device, when a high voltage is applied to the target 2 by a power source 7, the material of the target 2 is deposited as a thin film on the sea urchin 3, forming a thin film. will be held.
第２図は本発明による薄膜の内部応力除去装置の一実施
例の部分断面図でおる。FIG. 2 is a partial sectional view of an embodiment of the thin film internal stress relieving device according to the present invention.
本実施例において、ウェハ３）ｔつエバホルダ８により
ウェハ治具４の側面に支持されている。このウェハ治＾
４には、ウェハ３に対して薄膜形成前に予め反りを与え
るためのねじ９が螺入されている。In this embodiment, the wafer 3) is supported on the side surface of the wafer jig 4 by two Eva holders 8. This wafer treatment
A screw 9 is screwed into the wafer 4 for warping the wafer 3 before forming a thin film thereon.
すなわち、このねじ９は、第２図から明らかなようＶ’
Ｃ、ウェハ３の背面側から押圧することにより、ウェハ
３に対して、薄膜１０の形成後に該薄膜１０の内部に発
生する応力を打ち消す方向に微小量の反りを薄膜形成前
に予め与えるものである。That is, this screw 9 is V' as is clear from FIG.
C. By pressing from the back side of the wafer 3, a slight amount of warpage is applied to the wafer 3 in advance in a direction to cancel out the stress generated inside the thin film 10 after the thin film 10 is formed, before forming the thin film. be.
したがって、予め反りを与えたウェハ３に対してたとえ
ば第１図に示すような薄膜形成装置を用いて薄膜１０を
形成した後、ねじ９による押圧力を除去してウェー・３
なつ不・・治具４から取り外した場合、薄［１０の内部
に発生する応力を減少させることができる。Therefore, after forming a thin film 10 on a wafer 3 which has been warped in advance using, for example, a thin film forming apparatus as shown in FIG.
Natsufu: When removed from the jig 4, the stress generated inside the thin plate 10 can be reduced.
その結果・ ウｚ）ゝ３上に形成された薄膜１０の剥れ
やクランク等が生じることｔ防止でき、高集積度の牛導
体素子でも歩留り良く製造することが第３図は本発明に
よる他の１つの実施例を示す部分断面図である。本実施
例では、ウェ・＼３に対して反りを与えるための手段と
して、圧電素子１１が用いられており、この圧ｉｉ率子
１１を↓ウニ・・治具４のウニ・・支持側に設けられて
いる。As a result, the thin film 10 formed on the thin film 10 can be prevented from peeling or cracking, and even highly integrated conductor elements can be manufactured with good yield. FIG. 2 is a partial cross-sectional view showing one embodiment of the invention. In this embodiment, a piezoelectric element 11 is used as a means for applying warp to the wafer \3, and this piezoelectric element 11 is placed on the support side of the wafer jig 4. It is provided.
この実施例の場合にも、圧電素子１１によりつニー・３
に対して微小量の反りを与えた状態で薄膜１０の形成を
行うことによって、内部応力の少ない薄膜１０を形成で
き、反り量の制御も精度良く行うことができる。In this embodiment as well, the piezoelectric element 11
By forming the thin film 10 with a slight amount of warpage applied to the film, the thin film 10 can be formed with low internal stress, and the amount of warp can be controlled with high precision.
第４図）１本発明によるさらに他の１つの実施例を示す
部分断面図である。本実施例では、ウニ・）３に対して
反りを与えるための手段として磁歪素子１２が用いられ
ている。すなわち、この実施例において（ま、［＃１３
によりコイル１４から磁歪素子１２に磁力を与えて該磁
歪素子１２に磁歪力を生じさせることによって、ウニ・
・′３は薄膜形成前に予め微小量の反りを与えられる。FIG. 4) 1 is a partial sectional view showing still another embodiment according to the present invention. In this embodiment, a magnetostrictive element 12 is used as a means for applying warp to the sea urchin 3. That is, in this example (well, [#13
By applying a magnetic force from the coil 14 to the magnetostrictive element 12 to generate a magnetostrictive force in the magnetostrictive element 12, the sea urchin
・'3 is given a slight amount of warpage in advance before forming the thin film.
その結果、本実施例においても、内部応力の少い薄膜１
０を形成することができ、しかも反り量の制御を精度良
く行うことが可能である。As a result, in this example as well, the thin film 1 with low internal stress
0 can be formed, and the amount of warpage can be controlled with high accuracy.
なお、ウニ・・３に対して反りを与えるための手段は前
記した例の他に、任意の好適な手段を用いることも可能
である。In addition to the above-mentioned example, any suitable means can be used to warp the sea urchin 3.
以上説明したように、本発明によれば、ウェハ上に形成
させる薄膜の内部応力を減少させることができ、薄膜の
剥れやクラック等を防止し、歩留りを向上させることか
できる。As described above, according to the present invention, it is possible to reduce the internal stress of a thin film formed on a wafer, prevent peeling and cracking of the thin film, and improve yield.
第１図は本発明を適用できる薄膜形成装置の一例を示す
概略説明図、第２図（ｉ本発明による薄膜の内部応力除
去Ｖ＆置の一実施例を示す部分断面図、第３図と第４図
はそれぞれ本発明の他の実施例を示す部分断面図で＃る
。
３・・・ウェハ、４・・・ウェハ治具、９・・・ねじ、
１０・・・薄膜、１１・・・圧電軍子、１２・・・磁歪
孝子。
第 １ 図FIG. 1 is a schematic explanatory diagram showing an example of a thin film forming apparatus to which the present invention can be applied, FIG. 4 are partial sectional views showing other embodiments of the present invention. 3... Wafer, 4... Wafer jig, 9... Screw,
10...Thin film, 11...Piezoelectric gun, 12...Magnetostrictive Takako. Figure 1
Claims (1)
ことを特徴とする薄膜の内部応力除去装置。A device for relieving internal stress of a thin film, comprising means for pre-warping a wafer before forming the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6527882A JPS58182822A (en) | 1982-04-21 | 1982-04-21 | Removing apparatus for internal stress in thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6527882A JPS58182822A (en) | 1982-04-21 | 1982-04-21 | Removing apparatus for internal stress in thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58182822A true JPS58182822A (en) | 1983-10-25 |
Family
ID=13282293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6527882A Pending JPS58182822A (en) | 1982-04-21 | 1982-04-21 | Removing apparatus for internal stress in thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58182822A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6459809A (en) * | 1987-08-31 | 1989-03-07 | Nec Corp | Formation of low-stress thin film and its manufacture |
| JP2004133109A (en) * | 2002-10-09 | 2004-04-30 | Seiko Epson Corp | Method for manufacturing substrate having thin film formed thereon, method for manufacturing electrooptical device, electrooptical device, and electronic appliance |
| JP2015098411A (en) * | 2013-11-19 | 2015-05-28 | 古河機械金属株式会社 | Method and apparatus for manufacturing nitride semiconductor substrate |
-
1982
- 1982-04-21 JP JP6527882A patent/JPS58182822A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6459809A (en) * | 1987-08-31 | 1989-03-07 | Nec Corp | Formation of low-stress thin film and its manufacture |
| JP2004133109A (en) * | 2002-10-09 | 2004-04-30 | Seiko Epson Corp | Method for manufacturing substrate having thin film formed thereon, method for manufacturing electrooptical device, electrooptical device, and electronic appliance |
| JP2015098411A (en) * | 2013-11-19 | 2015-05-28 | 古河機械金属株式会社 | Method and apparatus for manufacturing nitride semiconductor substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4962441A (en) | Isolated electrostatic wafer blade clamp | |
| US3781975A (en) | Method of manufacturing diodes | |
| JPS58182822A (en) | Removing apparatus for internal stress in thin film | |
| JP2561735B2 (en) | Liquid crystal display manufacturing method | |
| US6057235A (en) | Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition | |
| GB2317270A (en) | Forming a layer on a pre-stressed semiconductor wafer | |
| JPH0556013B2 (en) | ||
| JPS61158145A (en) | Processing method for semiconductor substrate | |
| JPH0255175B2 (en) | ||
| JP2552420Y2 (en) | Ceramic electrostatic chuck | |
| JPS6156843A (en) | Electrostatic attractive plate | |
| KR960030315A (en) | Wet-phase epitaxial growth method | |
| JPH06331339A (en) | Method and device for measuring deformation of thin plate | |
| JPH02205666A (en) | Formation of sputtered film | |
| JPS63285928A (en) | Device for manufacturing semiconductor | |
| JPH10256352A (en) | Device for positioning substrate | |
| JPS6037724A (en) | Manufacture of thin film semiconductor device | |
| JPH0249710Y2 (en) | ||
| JPS60177834A (en) | Deformable chuck driven by piezoelectric means | |
| JPS567434A (en) | Manufacture of semiconductor device | |
| JP4001354B2 (en) | Plasma processing equipment | |
| JPS62150829A (en) | Manufacture of semiconductor device | |
| JPH0429217B2 (en) | ||
| JPS6146017A (en) | Thin film producing apparatus | |
| JPH0697092A (en) | Holding means for board |