JPH0632692A - Quartz crucible for lifting silicon single crystal - Google Patents
Quartz crucible for lifting silicon single crystalInfo
- Publication number
- JPH0632692A JPH0632692A JP18811692A JP18811692A JPH0632692A JP H0632692 A JPH0632692 A JP H0632692A JP 18811692 A JP18811692 A JP 18811692A JP 18811692 A JP18811692 A JP 18811692A JP H0632692 A JPH0632692 A JP H0632692A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- quartz crucible
- single crystal
- crystal
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はチョクラルスキー法によ
るシリコン単結晶製造において、多結晶シリコンの充填
量の増加と結晶の成長方向の温度勾配増加による高速引
き上げとを可能にした石英るつぼに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz crucible capable of increasing the filling amount of polycrystalline silicon and high-speed pulling by increasing the temperature gradient in the crystal growth direction in the production of silicon single crystals by the Czochralski method.
【０００２】[0002]
【従来の技術】シリコン単結晶の製造では、通常チョク
ラルスキー法が用いられる。チョクラルスキー法では、
チャンバ内に設置した石英製のるつぼに多結晶シリコン
を充填し、これをヒータで加熱溶融した後、この融液中
に種結晶を浸して、回転しながら上方に引き上げ、種結
晶に引き続き単結晶を成長させる。2. Description of the Related Art The Czochralski method is usually used in the production of silicon single crystals. In the Czochralski method,
A quartz crucible placed in the chamber is filled with polycrystalline silicon, and this is heated and melted by a heater, then the seed crystal is immersed in this melt and pulled up while rotating, and then the seed crystal is followed by a single crystal. Grow.
【０００３】近年、半導体装置の需要量の増大に伴い、
経済的観点から、既存の設備のままでシリコン単結晶の
生産量を増大することが望まれており、この解決法の一
つに引き上げ速度の高速化が挙げられる。石英るつぼは
図２に示すように丸底で円筒状のものが一般的である。
単結晶の引き上げ速度に関連する技術として、るつぼ及
び融液上部に遮蔽板を設置して、引き上げ速度の高速化
を図る技術（特公昭５７−４０１１９号公報）が知られ
ている。また、単結晶中の酸素濃度に注目して、形状を
変化させたるつぼを用いる技術（特開昭５７−１９１２
９５号公報、特開昭５７−３８３９８号公報）が知られ
ている。With the recent increase in demand for semiconductor devices,
From an economical point of view, it is desired to increase the production amount of silicon single crystals with existing equipment, and one of the solutions is to increase the pulling speed. As shown in FIG. 2, a quartz crucible generally has a round bottom and a cylindrical shape.
As a technique related to the pulling rate of a single crystal, there is known a technique of installing a shield plate on the crucible and the upper part of the melt to increase the pulling rate (Japanese Patent Publication No. 57-40119). Also, paying attention to the oxygen concentration in the single crystal, a technique of using a crucible having a changed shape (Japanese Patent Laid-Open No. 57-1912).
Japanese Patent Laid-Open No. 95 and Japanese Patent Laid-Open No. 57-38398).
【０００４】[0004]
【発明が解決しようとする課題】特公昭５７−４０１１
９号公報に記載の技術では、遮蔽板の設置により装置が
大掛かりになり、コストアップにつながるという問題が
ある。また特開昭５７−１９１２９５号公報及び特開昭
５７−３８３９８号公報に記載の技術では、酸素濃度の
均一化に効果があっても、温度制御の困難さや充填量の
低減によって生産性が低下するという問題がある。[Problems to be Solved by the Invention] Japanese Patent Publication No. 57-4011
The technique described in Japanese Patent No. 9 has a problem in that the installation of the shield plate makes the device large in size, leading to an increase in cost. Further, in the techniques described in JP-A-57-191295 and JP-A-57-38398, productivity is reduced due to difficulty of temperature control and reduction of filling amount even though it is effective in uniformizing oxygen concentration. There is a problem of doing.
【０００５】本発明は複雑な装置を用いることなく引き
上げ速度を高速化することができる技術を提供すること
を目的とする。An object of the present invention is to provide a technique capable of increasing the pulling speed without using a complicated device.
【０００６】[0006]
【課題を解決するための手段】本発明は前記問題点を解
決するためになされたもので、チョクラルスキー法によ
るシリコン単結晶製造において、石英るつぼの側壁の上
端部に上方が拡大したテーパを設け、多結晶シリコンの
充填量の増加を図ると共に、るつぼ壁から単結晶への伝
熱を少なくして、単結晶の温度勾配増加による高速引き
上げを可能にしたものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and in the production of a silicon single crystal by the Czochralski method, a tapered upper part of the side wall of a quartz crucible has an enlarged taper. It is provided to increase the filling amount of polycrystalline silicon, reduce heat transfer from the crucible wall to the single crystal, and enable high-speed pulling by increasing the temperature gradient of the single crystal.
【０００７】[0007]
【作用】石英るつぼは、１回の引き上げ毎に使い捨てと
なるので、るつぼに充填できる多結晶シリコン量が多
く、引き上げられる単結晶量が多い程、コストダウンを
図ることができる。石英るつぼへの充填量を増やすに
は、るつぼ径の増大や、るつぼ高さの増加等が考えられ
る。しかし、るつぼ径を増大させると、ヒータやサセプ
タ等のカーボン製品のサイズも増大し、それに応じてコ
ストアップとなるため、充填量増加の効果がなくなる。
また、るつぼ高さを増加すると引き上げ中、石英るつぼ
の側壁の上端部が冷えやすくなり、そこにＳｉＯが堆積
して、落下し、結晶成長界面に付着して単結晶化を阻害
するという問題が生じる。そのため、通常直径４００ｍ
ｍφるつぼの場合、るつぼ高さは３００ｍｍとなってお
り、通常、充填量４５ｋｇが最大である。Since the quartz crucible is thrown away after each pulling, the amount of polycrystalline silicon that can be filled in the crucible is large, and the cost can be reduced as the amount of pulled single crystal is large. In order to increase the filling amount in the quartz crucible, it is possible to increase the crucible diameter and the crucible height. However, if the crucible diameter is increased, the size of carbon products such as heaters and susceptors also increases, and the cost increases accordingly, so that the effect of increasing the filling amount is lost.
Further, when the height of the crucible is increased, the upper end of the side wall of the quartz crucible is likely to be cooled during pulling, and SiO is deposited on the upper end of the quartz crucible and drops, which adheres to the crystal growth interface and hinders single crystallization. Occurs. Therefore, the diameter is usually 400m
In the case of the mφ crucible, the crucible height is 300 mm, and the maximum filling amount is usually 45 kg.
【０００８】図１は本発明による石英るつぼである。図
２に示した従来のるつぼとは、るつぼの側壁の上端部が
異なる。本発明によれば、上端部３０ｍｍが外側に４５
°広げられたテーパ形状となっている。これにより、多
結晶シリコン２を従来のるつぼよりも多く充填すること
ができる。るつぼ高さＨは従来と同じであり、引き上げ
中のＳｉＯの堆積の問題はない。また、るつぼ形状の変
更に伴う、カーボン製品の変更はサセプタ３の上端の形
状の変更のみであり、従来のカーボン製品をそのまま使
用することができ、コストアップはない。従って、本発
明によれば、従来法と同様に引き上げの安定性を確保し
たまま、多結晶シリコンの充填量を増加することがで
き、単結晶シリコンの生産性が向上する。FIG. 1 shows a quartz crucible according to the present invention. The conventional crucible shown in FIG. 2 is different in the upper end portion of the side wall of the crucible. According to the present invention, the top 30 mm is 45
° It has a widened taper shape. Thereby, the polycrystalline silicon 2 can be filled more than the conventional crucible. The crucible height H is the same as the conventional one, and there is no problem of SiO deposition during pulling. Further, the change of the carbon product accompanying the change of the crucible shape is only the change of the shape of the upper end of the susceptor 3, and the conventional carbon product can be used as it is, and the cost is not increased. Therefore, according to the present invention, the filling amount of polycrystalline silicon can be increased while securing the pulling stability as in the conventional method, and the productivity of single crystal silicon is improved.
【０００９】更に、石英るつぼ上端部が外側、即ち引上
単結晶から遠ざかる方向に曲げられたために、るつぼ側
壁から単結晶への熱輻射の影響が減少し、るつぼ上部と
対向する位置にある結晶の温度は低くなる。そのため、
結晶の成長方向での温度勾配が大きくなる。図３は本発
明のるつぼを用いて引き上げを行ったときの結晶の成長
方向の測温結果である。本発明によれば、成長方向の温
度勾配が増加する傾向にある。結晶の成長速度と温度勾
配には以下の式が知られている。Further, since the upper end of the quartz crucible is bent outward, that is, in the direction away from the pulling single crystal, the influence of heat radiation from the crucible side wall to the single crystal is reduced, and the crystal at the position facing the upper part of the crucible is reduced. Temperature will be lower. for that reason,
The temperature gradient in the crystal growth direction becomes large. FIG. 3 shows the results of temperature measurement in the crystal growth direction when pulling up using the crucible of the present invention. According to the present invention, the temperature gradient in the growth direction tends to increase. The following equations are known for the crystal growth rate and temperature gradient.
【００１０】 Ｖ＝１／ｇ（Ｋｓ×ΔＴｓ−Ｋ１×ΔＴｌ） Ｖ：引き上げ速度 ｇ：密度 Ｋｓ：結晶中の熱伝導率 Ｋｌ：融液中の熱伝導率 ΔＴｓ：結晶の温度勾配 ΔＴｌ：融液の温度勾配 上式から、結晶の温度勾配が増加すれば、引き上げ速度
を速くすることができる。したがって、本発明によれば
温度制御方法は従来と何ら変わることなく、引き上げ速
度の高速化が可能となり、生産性の向上に寄与する。V = 1 / g (Ks × ΔTs−K1 × ΔTl) V: Pulling rate g: Density Ks: Thermal conductivity in crystal Kl: Thermal conductivity in melt ΔTs: Temperature gradient of crystal ΔTl: Melt Liquid Temperature Gradient From the above equation, if the crystal temperature gradient increases, the pulling rate can be increased. Therefore, according to the present invention, the temperature control method is not different from the conventional method, and the pulling speed can be increased, which contributes to the improvement of productivity.
【００１１】[0011]
【実施例】図１は本発明による実施例の縦断面図であ
る。直径４００ｍｍの石英るつぼの側壁上端にテーパ４
の寸法５が３０ｍｍでテーパの角度６が４５°で外側に
傾けた形状の石英るつぼ１を使用し、多結晶シリコンの
充填を行った。表１は図１に示した実施例のるつぼの多
結晶シリコン２の充填量と図２に示した従来の直径４０
０ｍｍφのるつぼの充填量を比較したものである。実施
例によれば充填量を５ｋｇ（約１１％）増加することが
できる。1 is a vertical sectional view of an embodiment according to the present invention. Taper 4 on the upper end of the side wall of a quartz crucible with a diameter of 400 mm
Using a quartz crucible 1 having a dimension 5 of 30 mm and a taper angle 6 of 45 ° and inclined outward, polycrystalline silicon was filled. Table 1 shows the filling amount of polycrystalline silicon 2 in the crucible of the embodiment shown in FIG. 1 and the conventional diameter 40 shown in FIG.
This is a comparison of the filling amounts of 0 mmφ crucibles. According to the embodiment, the filling amount can be increased by 5 kg (about 11%).
【００１２】次に、上記の多結晶シリコンを充填した石
英るつぼを引き上げ機チャンバ内にセットし、直径６イ
ンチφの単結晶の引き上げを行い、多結晶化率及び引き
上げ速度を本発明による方法と従来法とで比較した。表
２に、それぞれのるつぼで１０本の結晶を引き上げた
時、成長途中で多結晶化した結晶本数を示した。両者と
も１本のみが多結晶化しており、本発明によれば、多結
晶化率は従来法と変わらないことがわかる。Next, the above-mentioned quartz crucible filled with polycrystalline silicon is set in a pulling machine chamber, and a single crystal having a diameter of 6 inches is pulled, and the polycrystallization rate and pulling rate are set according to the method of the present invention. Comparison was made with the conventional method. Table 2 shows the number of crystals that were polycrystallized during the growth when 10 crystals were pulled in each crucible. Only one of them is polycrystallized, and according to the present invention, it can be seen that the polycrystallization rate is not different from that of the conventional method.
【００１３】[0013]
【表１】 ──────────────────────────────────── 使用るつぼ 従来 本発明 多結晶Ｓｉ充填量（ｋｇ） ４５ ５０ ────────────────────────────────────[Table 1] ──────────────────────────────────── Crucible used Conventional invention Polycrystalline Si filling amount (Kg) 45 50 ────────────────────────────────────
【００１４】[0014]
【表２】 ──────────────────────────────────── 使用るつぼ 従来 本発明 多結晶化結晶数（本） １／１０ １／１０ ──────────────────────────────────── 図４は、引き上げ中の引き上げ速度の推移である。残融
液量が約４２ｋｇより減った時点から、本発明のるつぼ
を用いた場合、引き上げ速度が速くなる傾向にある。し
たがって、本発明によれば充填量の増加及び高速引き上
げが可能となり、生産性が向上する。[Table 2] ──────────────────────────────────── Crucible to be used Conventional invention Polycrystal number of crystals (Book) 1/10 1/10 ──────────────────────────────────── Figure 4 It is the transition of the pulling speed inside. When the crucible of the present invention is used, the pulling rate tends to increase from the time when the residual melt amount is less than about 42 kg. Therefore, according to the present invention, the filling amount can be increased and the speed can be increased at a high speed, and the productivity is improved.
【００１５】[0015]
【発明の効果】本発明によるるつぼを用いることによ
り、多結晶シリコンの充填量を増加することができ、ま
た高速引き上げが可能となるため、生産性の向上につな
がる。By using the crucible according to the present invention, the filling amount of polycrystalline silicon can be increased and the pulling speed can be increased, which leads to improvement in productivity.
【図１】実施例の石英るつぼとサセプタの縦断面図であ
る。FIG. 1 is a vertical sectional view of a quartz crucible and a susceptor of an embodiment.
【図２】従来の石英るつぼとサセプタの縦断面図であ
る。FIG. 2 is a vertical sectional view of a conventional quartz crucible and a susceptor.
【図３】本発明の石英るつぼを使用した場合と従来の石
英るつぼを使用した場合の結晶温度分布測定結果比較で
ある。FIG. 3 is a comparison of crystal temperature distribution measurement results when a quartz crucible of the present invention is used and when a conventional quartz crucible is used.
【図４】本発明の石英るつぼを使用した場合と従来の石
英るつぼを使用した場合の引き上げ速度推移の比較であ
る。FIG. 4 is a comparison of pulling speed transitions when a quartz crucible of the present invention is used and when a conventional quartz crucible is used.
１ 石英るつぼ ２ 多結晶シリコン ３ サセプタ ４ テーパ ５ テーパの寸法 ６ テーパの角度 Ｄ 直径 Ｈ 高さ 1 Quartz crucible 2 Polycrystalline silicon 3 Susceptor 4 Taper 5 Taper dimension 6 Taper angle D Diameter H Height
───────────────────────────────────────────────────── フロントページの続き (72)発明者 関 康之 千葉市中央区川崎町１番地 川崎製鉄株式 会社技術研究本部内 (72)発明者 金田 洋 千葉市中央区川崎町１番地 川崎製鉄株式 会社技術研究本部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuyuki Seki 1 Kawasaki-cho, Chuo-ku, Chiba City Kawasaki Steel Co., Ltd. Technical Research Headquarters (72) Inventor Hiroshi Kaneda 1 Kawasaki-cho, Chuo-ku, Chiba City Kawasaki Steel Co., Ltd. Research headquarters
Claims (1)
たテーパを設けたことを特徴とするシリコン単結晶引き
上げ用石英るつぼ。1. A quartz crucible for pulling up a silicon single crystal, characterized in that a tapered upper portion of a side wall of the quartz crucible is enlarged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18811692A JPH0632692A (en) | 1992-07-15 | 1992-07-15 | Quartz crucible for lifting silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18811692A JPH0632692A (en) | 1992-07-15 | 1992-07-15 | Quartz crucible for lifting silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0632692A true JPH0632692A (en) | 1994-02-08 |
Family
ID=16217992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18811692A Withdrawn JPH0632692A (en) | 1992-07-15 | 1992-07-15 | Quartz crucible for lifting silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0632692A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5919306A (en) * | 1997-11-03 | 1999-07-06 | Sumitomo Sitix Corporation | Silicon melting crucible |
| JP2010168246A (en) * | 2009-01-22 | 2010-08-05 | Japan Siper Quarts Corp | Crucible and method for pulling single crystal |
| CN103827048A (en) * | 2011-08-05 | 2014-05-28 | 科卢斯博知识产权有限公司 | Crucible materials |
-
1992
- 1992-07-15 JP JP18811692A patent/JPH0632692A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5919306A (en) * | 1997-11-03 | 1999-07-06 | Sumitomo Sitix Corporation | Silicon melting crucible |
| JP2010168246A (en) * | 2009-01-22 | 2010-08-05 | Japan Siper Quarts Corp | Crucible and method for pulling single crystal |
| US8980004B2 (en) | 2009-01-22 | 2015-03-17 | Japan Super Quartz Corporation | Crucible and method for pulling a single crystal |
| CN103827048A (en) * | 2011-08-05 | 2014-05-28 | 科卢斯博知识产权有限公司 | Crucible materials |
| US10107550B2 (en) | 2011-08-05 | 2018-10-23 | Crucible Intellectual Property, LLC. | Crucible materials |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19991005 |