JPH0629193A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPH0629193A JPH0629193A JP18374092A JP18374092A JPH0629193A JP H0629193 A JPH0629193 A JP H0629193A JP 18374092 A JP18374092 A JP 18374092A JP 18374092 A JP18374092 A JP 18374092A JP H0629193 A JPH0629193 A JP H0629193A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- membrane
- pattern
- film
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 claims abstract description 32
- 239000010432 diamond Substances 0.000 claims abstract description 24
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 24
- 239000006096 absorbing agent Substances 0.000 claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 239000013081 microcrystal Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052796 boron Inorganic materials 0.000 abstract description 12
- 238000010894 electron beam technology Methods 0.000 abstract description 8
- 238000001015 X-ray lithography Methods 0.000 abstract description 5
- 238000007689 inspection Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002194 synthesizing effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、Ｘ線リソグラフィー
を行うためのＸ線マスクに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray mask for performing X-ray lithography.
【０００２】[0002]
【従来の技術】図４は、例えばSemiconductor World
（半導体世界）1991 5月号（第107-111頁）に示された
Ｘ線マスクの断面図であり、図において、１はシリコン
（Ｓｉ）基板、２はシリコン基板１の両面に成膜された
Ｘ線を透過するメンブレン（membrane；膜）、３は半導
体（シリコン基板１）用の微細パターン３ａが描画され
たＸ線吸収体、４は高剛性の支持枠、５はエッチングマ
スクである。ここで、シリコン基板１およびメンブレン
２の厚さは、それぞれ約２mmおよび２μｍである。また
メンブレン２はＸ線透過率のよい軽元素からつくり、他
方Ｘ線吸収体３はタングステン（Ｗ）、タンタル(Ta)等
の重金属から形成する。エッチングマスク５は二酸化ケ
イ素（ＳｉＯ2 ）等から製造する。2. Description of the Related Art FIG. 4 shows, for example, Semiconductor World.
(Semiconductor World) FIG. 1 is a cross-sectional view of the X-ray mask shown in the May 1991 issue (pages 107-111), in which 1 is a silicon (Si) substrate and 2 is a film formed on both sides of the silicon substrate 1. The X-ray permeable membrane, 3 is an X-ray absorber on which the semiconductor (silicon substrate 1) fine pattern 3a is drawn, 4 is a highly rigid support frame, and 5 is an etching mask. Here, the thicknesses of the silicon substrate 1 and the membrane 2 are about 2 mm and 2 μm, respectively. The membrane 2 is made of a light element having a high X-ray transmittance, while the X-ray absorber 3 is made of a heavy metal such as tungsten (W) or tantalum (Ta). The etching mask 5 is made of silicon dioxide (SiO 2 ).
【０００３】このＸ線マスクは、Ｘ線リソグラフィー時
に、露光材を塗布したシリコンウエハと近接してこれに
平行に設置される。そして、シンクロトロン（ＳＲ）放
射光源等からこのＸ線マスクにＸ線を照射すると、微細
パターン３ａに沿って設けられたＸ線吸収体３はＸ線を
吸収し、メンブレン２はＸ線を透過するため、微細パタ
ーン３ａを先の露光材を塗布したシリコンウエハ上に転
写することができる。This X-ray mask is placed close to and parallel to a silicon wafer coated with an exposure material during X-ray lithography. When the X-ray mask is irradiated with X-rays from a synchrotron (SR) radiation source or the like, the X-ray absorbers 3 provided along the fine pattern 3a absorb the X-rays and the membrane 2 transmits the X-rays. Therefore, the fine pattern 3a can be transferred onto the silicon wafer coated with the previous exposure material.
【０００４】ところで、Ｘ線吸収体３の微細パターン３
ａを形成する場合は、現在二つのプロセスが用いられて
いる。一つはアディティブプロセス（additive proces
s）で上述のタングステンを選択成長させたり、あるい
は金をめっきしたりする。もう一つはサブトラクティブ
プロセス（subtractive process)で、スパッタ法により
一様に堆積させたタンタルあるいはタングステンのＸ線
吸収体薄膜をドライエッチング技術によりパターニング
する。By the way, the fine pattern 3 of the X-ray absorber 3
Two processes are currently used to form a. One is the additive process
In s), the above-mentioned tungsten is selectively grown or gold is plated. The other is a subtractive process in which the X-ray absorber thin film of tantalum or tungsten uniformly deposited by the sputtering method is patterned by the dry etching technique.
【０００５】ドライ加工をするサブトラクティブプロセ
スは、めっき法等を用いるアディティブプロセスに比
べ、微細パターンの形成能力にすぐれているが、Ｘ線マ
スクの位置精度の向上に有利な低応力吸収体パターンの
形成に関しては、アディティブプロセスに劣る。The subtractive process for dry processing is superior in forming ability of a fine pattern as compared with an additive process using a plating method or the like, but the subtractive process of the low stress absorber which is advantageous for improving the positional accuracy of the X-ray mask is performed. In terms of formation, it is inferior to the additive process.
【０００６】すなわち、サブトラクティブプロセスのよ
うに堆積によって薄膜を形成する場合には、その堆積方
法によらず、一般に内部応力が存在する。そうすると、
Ｘ線マスクではメンブレン２およびＸ線吸収体３の薄膜
の応力が相互に作用して、形成済みの微細パターン３ａ
の位置を変位させてしまう。これらの薄膜が有する応力
の影響はシリコン基板１が厚いときはほとんど問題にな
らないが、シリコン基板１が薄膜化され、基板１の剛性
が低下するときには薄膜応力の緩和に伴って基板１に変
形を生じさせる。That is, when a thin film is formed by deposition as in the subtractive process, internal stress generally exists regardless of the deposition method. Then,
In the X-ray mask, the stress of the thin film of the membrane 2 and the thin film of the X-ray absorber 3 interact with each other to form the fine pattern 3a already formed.
Will displace the position of. The influence of the stress that these thin films have is seldom a problem when the silicon substrate 1 is thick, but when the silicon substrate 1 is thinned and the rigidity of the substrate 1 decreases, the substrate 1 is deformed due to the relaxation of the thin film stress. Give rise to.
【０００７】そこで、Ｘ線マスク用のメンブレン材料と
しては、従来からＸ線透過率が高く、しかも高剛性であ
る炭化ケイ素（ＳｉＣ）や窒化ケイ素（ＳｉＮ）が用い
られてきたが、近年さらに高剛性な材料として結晶ダイ
ヤモンドの利用が検討されている。Therefore, as a membrane material for an X-ray mask, silicon carbide (SiC) or silicon nitride (SiN), which has a high X-ray transmittance and a high rigidity, has been conventionally used. The use of crystalline diamond as a rigid material is being considered.
【０００８】ダイヤモンドの薄膜はヤング率が大きく高
剛性であるため、Ｘ線吸収体３をエッチング除去した場
合、またＳＲ光の照射によりＸ線吸収体膜の応力が変化
した場合にも微細パターン３ａの位置ずれ（歪み）が生
じにくく、Ｘ線マスクの位置精度を高めることができる
という特長がある。Since the diamond thin film has a large Young's modulus and high rigidity, the fine pattern 3a is formed even when the X-ray absorber 3 is removed by etching or when the stress of the X-ray absorber film is changed by the irradiation of SR light. Is less likely to be displaced (distortion), and the positional accuracy of the X-ray mask can be improved.
【０００９】[0009]
【発明が解決しようとする課題】従来のダイヤモンド薄
膜は以上のように絶縁膜で構成されているので、電子ビ
ーム（ＥＢ）等でパターンの描画や回路パターンの検査
を行ったり、ＳＲ露光を行う場合、局所的なチャージア
ップが生じて不鮮明なパターン像や歪みのあるパターン
像となったり、極端な場合にはＥＢ像が得られなくなっ
たりする。このため、寸法精度の高い描画・検査やＸ線
リソグラフィーが行いにくいという問題点があった。Since the conventional diamond thin film is composed of the insulating film as described above, pattern drawing and circuit pattern inspection by electron beam (EB) or SR exposure is performed. In this case, local charge-up may occur, resulting in an unclear pattern image or a distorted pattern image, or in an extreme case, an EB image may not be obtained. Therefore, there is a problem that it is difficult to perform drawing / inspection and X-ray lithography with high dimensional accuracy.
【００１０】この発明は上記のような問題点を解消する
ためになされたもので、高剛性のメンブレンを有しなが
ら、上述の絶縁性ダイヤモンド薄膜に伴うパターン像の
歪み等が生じないＸ線マスクを提供することを目的とす
る。The present invention has been made to solve the above-mentioned problems, and has an X-ray mask which has a high-rigidity membrane but does not cause distortion of the pattern image due to the above-mentioned insulating diamond thin film. The purpose is to provide.
【００１１】[0011]
【課題を解決するための手段】この発明に係るＸ線マス
クは、導電性不純物を含有するダイヤモンド微結晶を含
むＸ線透過性のメンブレンと、このメンブレンの上に所
定のパターンに沿って設けられるＸ線吸収体を備える。An X-ray mask according to the present invention is provided with an X-ray permeable membrane containing diamond microcrystals containing conductive impurities, and provided on the membrane along a predetermined pattern. An X-ray absorber is provided.
【００１２】[0012]
【作用】この発明におけるＸ線マスクは、メンブレンが
ダイヤモンド微結晶からなるため高剛性を有し、かつこ
のダイヤモンド微結晶には導電性が含有されるため、回
路検査用に電子ビームを当てたときも、アースの効果に
よってチャージアップを生じることがなく鮮明なパター
ン像を得ることができる。また、Ｘ線露光用にＳＲ光を
照射したときも、Ｘ線吸収体から出てくる二次電子を安
定に外部へ逃がすことができるので、パターンの歪みを
生じることもない。The X-ray mask according to the present invention has a high rigidity because the membrane is made of diamond microcrystals, and since the diamond microcrystals contain conductivity, they are exposed to an electron beam for circuit inspection. Also, it is possible to obtain a clear pattern image without causing charge-up due to the effect of the earth. Further, even when SR light is irradiated for X-ray exposure, secondary electrons emitted from the X-ray absorber can be stably released to the outside, so that pattern distortion does not occur.
【００１３】[0013]
【実施例】実施例１．以下、この発明を図について説明
する。図１において、１，３，３ａ，４および５は、先
の図４に示したものと同じである。そして６は、ホウ素
（導電性不純物）を添加したダイヤモンド微結晶からな
るメンブレン、７はメンブレン６の上（Ｘ線入射側）に
形成されるＸ線反射防止膜である。メンブレン６はダイ
ヤモンドを主要な材料とするが、ホウ素を含有するため
導電性となる。また、Ｘ線反射防止膜７はスパッタ成膜
等で形成されるＳｉＮ膜などを用いるが、メンブレン６
と同様十分な導電性を有するものにする。なお、Ｘ線反
射防止膜７は省くこともできる。EXAMPLES Example 1. The present invention will be described below with reference to the drawings. In FIG. 1, 1, 3, 3a, 4 and 5 are the same as those shown in FIG. 6 is a membrane made of diamond microcrystals to which boron (conductive impurities) is added, and 7 is an X-ray antireflection film formed on the membrane 6 (X-ray incident side). The membrane 6 is mainly composed of diamond, but is conductive because it contains boron. Further, as the X-ray antireflection film 7, a SiN film or the like formed by sputtering film formation or the like is used.
Similar to the above, it should have sufficient conductivity. The X-ray antireflection film 7 can be omitted.
【００１４】図１のＸ線マスクにおける微細パターン３
ａを電子ビームで検査する場合には、電子ビームがそれ
ぞれ導電性のＸ線吸収体３→Ｘ線反射防止膜７→メンブ
レン６→シリコン基板１→支持枠４を経由してアースさ
れるため、従来のＸ線マスクにみられたような局所的な
チャージアップは生じず、鮮明なパターン像を得ること
ができる。また、ＳＲ光を照射してＸ線露光を行う際に
も、Ｘ線吸収体３から出てくる二次電子を安定に外部へ
逃がすことができるため、パターンの歪みを生じること
もない。Fine pattern 3 in the X-ray mask of FIG.
When a is inspected by an electron beam, the electron beam is grounded via the conductive X-ray absorber 3 → X-ray antireflection film 7 → membrane 6 → silicon substrate 1 → support frame 4, respectively. The local charge-up as seen in the conventional X-ray mask does not occur, and a clear pattern image can be obtained. Further, even when performing X-ray exposure by irradiating SR light, secondary electrons emitted from the X-ray absorber 3 can be stably released to the outside, so that pattern distortion does not occur.
【００１５】次に、図１のＸ線マスクに用いるメンブレ
ン６の製造方法を説明する。図２は、メンブレン６を成
膜するためのダイヤモンド膜合成装置の構成図である。
このダイヤモンド膜合成装置は、マイクロ波放電法と称
される成膜方法を利用する。図において、１０は反応板
支持ホルダ、１１は反応板支持ホルダ１０に囲まれた反
応チャンバ内に設置される石英管、１２は石英管１１の
上方に設けられる原料供給孔、１３は石英管１１の下方
に設けられる排気孔、１４は石英管１１内に設けられる
シリコン基板１（反応板）のホルダ、１５はマイクロ波
電源、１６は反応板支持ホルダ１０に沿ってスライド可
能なマイクロ波反射板である。石英管１１内は真空排気
装置（図示せず）により所定圧力に保たれている。Next, a method of manufacturing the membrane 6 used for the X-ray mask of FIG. 1 will be described. FIG. 2 is a configuration diagram of a diamond film synthesizing apparatus for forming the membrane 6.
This diamond film synthesizing apparatus uses a film forming method called a microwave discharge method. In the figure, 10 is a reaction plate support holder, 11 is a quartz tube installed in a reaction chamber surrounded by the reaction plate support holder 12, 12 is a raw material supply hole provided above the quartz tube 11, and 13 is a quartz tube 11 Of the silicon substrate 1 (reaction plate) provided in the quartz tube 11, 15 is a microwave power source, and 16 is a microwave reflection plate slidable along the reaction plate support holder 10. Is. The inside of the quartz tube 11 is kept at a predetermined pressure by a vacuum exhaust device (not shown).
【００１６】この装置においては、ダイヤモンド膜形成
のための原料ガス（炭素源）として、通常メタンガス
（ＣＨ4 ）と水素ガス（Ｈ2 ）の混合気を用い、混合比
（ＣＨ 4 ／Ｈ2 ）は、０．２〜１０％程度に設定する。
なお、炭素源は、他の炭化水素ガスやアルコール類でも
よい。In this apparatus, diamond film formation
Methane gas as a source gas (carbon source) for
(CHFour ) And hydrogen gas (H2 ) Mixture is used.
(CH Four / H2 ) Is set to about 0.2 to 10%.
The carbon source may be other hydrocarbon gas or alcohol.
Good.
【００１７】さて、このダイヤモンド膜合成装置におい
て、マイクロ波電源１５をＯＮにし、周波数２．４５Ｇ
Ｈｚのマイクロ波を石英管１１内に供給すると、ホルダ
１０の直上でマイクロ波放電が生じ、シリコン基板１は
イオン衝撃により７００〜９００℃程度まで昇温する。
その後、原料供給孔１２から原料ガスを供給すると、原
料ガスはマイクロ波放電により分解され、ＣＨ3 ラジカ
ルやＨ原子が生じて、シリコン基板１の表面にダイヤモ
ンド微結晶からなる膜が形成される。In the diamond film synthesizing apparatus, the microwave power source 15 is turned on and the frequency is 2.45G.
When a microwave of Hz is supplied into the quartz tube 11, microwave discharge is generated right above the holder 10, and the silicon substrate 1 is heated to about 700 to 900 ° C. due to ion bombardment.
After that, when the source gas is supplied from the source supply hole 12, the source gas is decomposed by microwave discharge, CH 3 radicals and H atoms are generated, and a film made of diamond microcrystals is formed on the surface of the silicon substrate 1.
【００１８】なお、メンブレン６は、こうして形成され
るダイヤモンド膜中にさらにホウ素（導電性不純物）を
ドーピングして完成するが、導電性不純物の添加は、原
料ガス中にこの導電性不純物を含むガスを混合すること
により、達成される。そこで、上記混合気等にホウ素を
含むＢ2 Ｈ6 ガスを添加した場合のダイヤモンド膜の比
抵抗の変化を図３に示す。混合ガス中のホウ素濃度（Ｂ
2 Ｈ6 ／ＣＨ4 ）の上昇に伴って抵抗率は小さくなり、
特にホウ素濃度が３％のときには抵抗率が十分に小さく
なることが分る。ただし、このホウ素の濃度は１０％以
上になると、メンブレン６中にＢ4 Ｃが生成してＸ線透
過率が低下するため好ましくない。The membrane 6 is completed by further doping the diamond film thus formed with boron (conductive impurities), but the conductive impurities are added by adding a gas containing the conductive impurities to the source gas. It is achieved by mixing Therefore, FIG. 3 shows a change in the specific resistance of the diamond film when the B 2 H 6 gas containing boron is added to the above mixture. Boron concentration in mixed gas (B
2 H 6 / CH 4 ) increases, the resistivity decreases,
In particular, it can be seen that the resistivity becomes sufficiently small when the boron concentration is 3%. However, if the boron concentration is 10% or more, B 4 C is generated in the membrane 6 and the X-ray transmittance is lowered, which is not preferable.
【００１９】なお本実施例ではマイクロ波放電法により
ホウ素を含有するメンブレンを成膜する方法について示
したが、成膜方法はこの方法に限るものではなく、アー
クを用いた放電、熱フィラメント法、アセチレン炎を用
いた方法など種々のダイヤモンド形成法を用いてさらに
ダイヤモンド膜中にホウ素を含有させることができるな
らば、本実施例と同様の導電性で高剛性のメンブレンを
得ることができる。また導電性不純物を含む添加ガスも
Ｂ2 Ｈ6 に限るものではなく、Ｂ2 Ｏ3 やホウ素を含む
有機材料、およびリン（Ｐ）やヒ素(As)等の導電性不純
物を用いて、比抵抗を下げることもできる。その他、ダ
イヤモンド膜の成膜後、Ｂ+ やＮ+ 等の不純物イオンビ
ームをダイヤモンド膜中に照射しても本実施例と同様の
メンブレンを得ることができる。In this embodiment, the method of forming a membrane containing boron by the microwave discharge method is shown, but the method of film formation is not limited to this method, and the discharge using an arc, the hot filament method, If boron can be further contained in the diamond film by using various diamond forming methods such as a method using an acetylene flame, a conductive and highly rigid membrane similar to that of this embodiment can be obtained. The additive gas containing conductive impurities is not limited to B 2 H 6 , but organic materials containing B 2 O 3 and boron, and conductive impurities such as phosphorus (P) and arsenic (As) are used. You can also reduce the resistance. In addition, even if the diamond film is irradiated with an impurity ion beam such as B + or N + after the diamond film is formed, a membrane similar to that of this embodiment can be obtained.
【００２０】[0020]
【発明の効果】以上のように、この発明によれば、高剛
性でかつ導電性のメンブレンを備えたＸ線マスクが得ら
れるため、応力の影響による微細パターンの変位がな
く、かつ電子ビームによるパターンの描画・回路検査時
やＸ線リソグラフィー時にも、局所的なチャージアップ
によるパターン像の歪み・鮮明度の低下が生じない。As described above, according to the present invention, since an X-ray mask having a highly rigid and conductive membrane can be obtained, there is no displacement of a fine pattern due to the influence of stress, and an electron beam is used. Even when a pattern is drawn, a circuit is inspected, or X-ray lithography is performed, the pattern image is not distorted and the sharpness is not lowered due to local charge-up.
【図１】この発明の一実施例によるＸ線マスクの断面図
である。FIG. 1 is a sectional view of an X-ray mask according to an embodiment of the present invention.
【図２】図１のＸ線マスクに用いるメンブレンを製造す
るダイヤモンド膜合成装置の構成図である。FIG. 2 is a configuration diagram of a diamond film synthesizing apparatus for manufacturing a membrane used for the X-ray mask in FIG.
【図３】図１のＸ線マスクに用いるメンブレンにおける
ホウ素濃度と比抵抗の関係を示すグラフ図である。FIG. 3 is a graph showing the relationship between boron concentration and specific resistance in the membrane used for the X-ray mask in FIG.
【図４】従来のＸ線マスクの断面図である。FIG. 4 is a sectional view of a conventional X-ray mask.
３ Ｘ線吸収体 ６ メンブレン 3 X-ray absorber 6 Membrane
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松井 安次 尼崎市塚口本町８丁目１番１号 三菱電機 株式会社中央研究所内 (72)発明者 丸本 健二 尼崎市塚口本町８丁目１番１号 三菱電機 株式会社中央研究所内 (72)発明者 矢部 秀毅 尼崎市塚口本町８丁目１番１号 三菱電機 株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Matsui Yasuji 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Central Research Laboratory (72) Inventor Kenji Marumoto 8-1-1 Tsukaguchihonmachi, Amagasaki Central Research Laboratory, Mitsubishi Electric Corporation (72) Hideki Yabe 8-1-1 Tsukaguchihonmachi, Amagasaki City Central Research Laboratory, Mitsubishi Electric Corporation
Claims (1)
結晶を含むＸ線透過性のメンブレンと、このメンブレン
の上に所定のパターンに沿って設けられるＸ線吸収体を
備えるＸ線マスク。1. An X-ray mask comprising an X-ray transmissive membrane containing diamond microcrystals containing conductive impurities, and an X-ray absorber provided on the membrane along a predetermined pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18374092A JP3220523B2 (en) | 1992-07-10 | 1992-07-10 | X-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18374092A JP3220523B2 (en) | 1992-07-10 | 1992-07-10 | X-ray mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0629193A true JPH0629193A (en) | 1994-02-04 |
| JP3220523B2 JP3220523B2 (en) | 2001-10-22 |
Family
ID=16141150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18374092A Expired - Fee Related JP3220523B2 (en) | 1992-07-10 | 1992-07-10 | X-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3220523B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949538A3 (en) * | 1998-04-08 | 2000-02-23 | Lucent Technologies Inc. | Membrane mask for projection lithography |
| US6375440B2 (en) | 1999-09-30 | 2002-04-23 | Fujitsu Limited | Fan unit, fan assembly, and an apparatus comprising the fan assembly |
| EP1365047A1 (en) * | 2002-04-25 | 2003-11-26 | Shin-Etsu Chemical Co., Ltd. | Diamond film and method for producing the same |
| KR20190068628A (en) * | 2017-03-31 | 2019-06-18 | 미쓰비시덴키 가부시키가이샤 | Industrial equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS623257A (en) * | 1985-06-28 | 1987-01-09 | Toshiba Corp | Formation of mask pattern and mask base used for it |
| JPH02241019A (en) * | 1989-03-15 | 1990-09-25 | Canon Inc | X-ray mask blanks, x-ray mask structure body, x-ray aligner and x-ray exposure method |
| JPH04107810A (en) * | 1990-08-28 | 1992-04-09 | Sumitomo Electric Ind Ltd | X-ray mask and manufacture thereof |
| JPH04130712A (en) * | 1990-09-21 | 1992-05-01 | Toppan Printing Co Ltd | Mask for x-ray exposure and manufacture thereof |
-
1992
- 1992-07-10 JP JP18374092A patent/JP3220523B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS623257A (en) * | 1985-06-28 | 1987-01-09 | Toshiba Corp | Formation of mask pattern and mask base used for it |
| JPH02241019A (en) * | 1989-03-15 | 1990-09-25 | Canon Inc | X-ray mask blanks, x-ray mask structure body, x-ray aligner and x-ray exposure method |
| JPH04107810A (en) * | 1990-08-28 | 1992-04-09 | Sumitomo Electric Ind Ltd | X-ray mask and manufacture thereof |
| JPH04130712A (en) * | 1990-09-21 | 1992-05-01 | Toppan Printing Co Ltd | Mask for x-ray exposure and manufacture thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949538A3 (en) * | 1998-04-08 | 2000-02-23 | Lucent Technologies Inc. | Membrane mask for projection lithography |
| US6375440B2 (en) | 1999-09-30 | 2002-04-23 | Fujitsu Limited | Fan unit, fan assembly, and an apparatus comprising the fan assembly |
| EP1365047A1 (en) * | 2002-04-25 | 2003-11-26 | Shin-Etsu Chemical Co., Ltd. | Diamond film and method for producing the same |
| US7070650B2 (en) | 2002-04-25 | 2006-07-04 | Shin-Etsu Chemical Co., Ltd. | Diamond film and method for producing the same |
| KR101179936B1 (en) * | 2002-04-25 | 2012-09-07 | 신에쓰 가가꾸 고교 가부시끼가이샤 | A diamond film and a method of producing the same |
| KR20190068628A (en) * | 2017-03-31 | 2019-06-18 | 미쓰비시덴키 가부시키가이샤 | Industrial equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3220523B2 (en) | 2001-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5490896A (en) | Photomask or a light shielding member having a light transmitting portion and a light shielding portion | |
| US4941942A (en) | Method of manufacturing a mask support of sic for x-ray lithography masks | |
| JPH0864524A (en) | Preparation of x-ray absorption mask | |
| JP3220523B2 (en) | X-ray mask | |
| KR930004236B1 (en) | X-ray exposure mask manufacturing method | |
| US4902897A (en) | Ion beam gun and ion beam exposure device | |
| JP2634183B2 (en) | Method of forming diamond crystal | |
| Stanishevsky et al. | Testing new chemistries for mask repair with focused ion beam gas assisted etching | |
| JP3866912B2 (en) | Lithographic mask substrate and method of manufacturing the same | |
| US6979520B2 (en) | Stencil mask for ion implantation | |
| US5335256A (en) | Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction | |
| JP3461219B2 (en) | Selective crystal growth method on gallium arsenide substrate | |
| JP2937380B2 (en) | Wiring forming method and apparatus | |
| JP2527009Y2 (en) | Diamond window | |
| JP3350235B2 (en) | Method of manufacturing X-ray mask and X-ray mask obtained by the method | |
| Nara et al. | Synchrotron radiation‐assisted silicon homoepitaxy at 100° C using Si2H6/H2 mixture | |
| JP2000216075A (en) | Manufacture of mask for x-ray exposure | |
| US5089085A (en) | Silicon carbide membrane for x-ray lithography and method for the prepartion thereof | |
| EP0323264B1 (en) | X-ray exposure process using an electrically conductive x-ray mask | |
| JP2005012187A (en) | Stencil mask for ion implantation, and formation method thereof | |
| JP3419583B2 (en) | Selective crystal growth method on gallium arsenide substrate | |
| KR910004008B1 (en) | X-ray transparent membrane and its production method | |
| JPH04105314A (en) | Manufacture of amorphous silicon | |
| JPH03289122A (en) | X-ray mask structure | |
| JP3157510B2 (en) | Light excitation treatment method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20000725 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070810 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080810 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080810 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090810 Year of fee payment: 8 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100810 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110810 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |