JP3220523B2 - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JP3220523B2 JP3220523B2 JP18374092A JP18374092A JP3220523B2 JP 3220523 B2 JP3220523 B2 JP 3220523B2 JP 18374092 A JP18374092 A JP 18374092A JP 18374092 A JP18374092 A JP 18374092A JP 3220523 B2 JP3220523 B2 JP 3220523B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- membrane
- film
- diamond
- ray mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012528 membrane Substances 0.000 claims description 29
- 239000010432 diamond Substances 0.000 claims description 22
- 229910003460 diamond Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 239000006096 absorbing agent Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000001015 X-ray lithography Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000002194 synthesizing effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
Description
【０００１】[0001]
【産業上の利用分野】この発明は、Ｘ線リソグラフィー
を行うためのＸ線マスクに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray mask for performing X-ray lithography.
【０００２】[0002]
【従来の技術】図４は、例えばSemiconductor World 19
91 5月号（第107-111 頁）に示されたＸ線マスクの断面
図であり、図において、１はシリコン（Ｓｉ）基板、２
はシリコン基板１の両面に成膜されたＸ線を透過するメ
ンブレン（membrane；膜）、３は半導体の微細パターン
３ａが描画されたＸ線吸収体、４は高剛性の支持枠、５
はエッチングマスクである。ここで、シリコン基板１お
よびメンブレン２の厚さは、それぞれ約２mmおよび２μ
ｍである。またメンブレン２はＸ線透過率のよい軽元素
からつくり、他方Ｘ線吸収体３はタングステン（Ｗ）、
タンタル(Ta)等の重金属から形成する。エッチングマス
ク５は二酸化ケイ素（ＳｉＯ2 ）等から製造する。BACKGROUND OF THE INVENTION FIG. 4, for example, Semiconductor Worl d 1 9
91 is a cross-sectional view of the X-ray mask shown in the May issue (pp. 107-111), wherein 1 is a silicon (Si) substrate;
Membrane for transmitting X-rays which is formed on both surfaces of the silicon substrate 1 (membrane; film), 3 fine pattern 3a is drawn X-ray absorber of semiconductors, 4 supporting frame of high rigidity, 5
Is an etching mask. Here, the thicknesses of the silicon substrate 1 and the membrane 2 are about 2 mm and 2 μm, respectively.
m. The membrane 2 is made of a light element having good X-ray transmittance, while the X-ray absorber 3 is made of tungsten (W),
It is formed from a heavy metal such as tantalum (Ta). The etching mask 5 is manufactured from silicon dioxide (SiO2) or the like.
【０００３】このＸ線マスクは、Ｘ線リソグラフィー時
に、露光材を塗布したシリコンウエハと近接してこれに
平行に設置される。そして、シンクロトロン（ＳＲ）放
射光源等からこのＸ線マスクにＸ線を照射すると、Ｘ線
吸収体３はＸ線を吸収し、メンブレン２はＸ線を透過す
るため、微細パターン３ａを先の露光材を塗布したシリ
コンウエハ上に転写することができる。The X-ray mask is placed close to and parallel to a silicon wafer coated with an exposure material during X-ray lithography. When the X-ray mask is irradiated with X-rays from a synchrotron (SR) radiation light source or the like , the X- ray absorber 3 absorbs the X-rays, and the membrane 2 transmits the X-rays. It can be transferred onto a silicon wafer coated with an exposure material.
【０００４】ところで、Ｘ線吸収体３の微細パターン３
ａを形成する場合は、現在二つのプロセスが用いられて
いる。一つはアディティブプロセス（additive proces
s）で上述のタングステンを選択成長させたり、あるい
は金をめっきしたりする。もう一つはサブトラクティブ
プロセス（subtractive process)で、スパッタ法により
一様に堆積させたタンタルあるいはタングステンのＸ線
吸収体薄膜をドライエッチング技術によりパターニング
する。The fine pattern 3 of the X-ray absorber 3
When forming a, two processes are currently used. One is the additive process.
In step s), the above-mentioned tungsten is selectively grown or gold is plated. The other is a subtractive process in which a tantalum or tungsten X-ray absorber thin film uniformly deposited by a sputtering method is patterned by a dry etching technique.
【０００５】ドライ加工をするサブトラクティブプロセ
スは、めっき法等を用いるアディティブプロセスに比
べ、微細パターンの形成能力にすぐれているが、Ｘ線マ
スクの位置精度の向上に有利な低応力吸収体パターンの
形成に関しては、アディティブプロセスに劣る。[0005] The subtractive process of performing dry processing is superior in the ability to form a fine pattern as compared with the additive process using a plating method or the like, but has a low stress absorber pattern which is advantageous in improving the positional accuracy of an X-ray mask. As for formation, it is inferior to the additive process.
【０００６】すなわち、サブトラクティブプロセスのよ
うに堆積によって薄膜を形成する場合には、その堆積方
法によらず、一般に内部応力が存在する。そうすると、
Ｘ線マスクではメンブレン２およびＸ線吸収体３の薄膜
の応力が相互に作用して、形成済みの微細パターン３ａ
の位置を変位させてしまう。これらの薄膜が有する応力
の影響はシリコン基板１が厚いときはほとんど問題にな
らないが、シリコン基板１が薄膜化され、基板１の剛性
が低下するときには薄膜応力の緩和に伴って基板１に変
形を生じさせる。That is, when a thin film is formed by deposition as in a subtractive process, an internal stress generally exists regardless of the deposition method. Then,
In the X-ray mask, the stress of the thin film of the membrane 2 and the thin film of the X-ray absorber 3 interact with each other to form the formed fine pattern 3a.
Is displaced. The effect of the stresses of these thin films is almost insignificant when the silicon substrate 1 is thick, but when the silicon substrate 1 is thinned and the rigidity of the substrate 1 is reduced, the substrate 1 is deformed with the relaxation of the thin film stress. Cause.
【０００７】そこで、Ｘ線マスク用のメンブレン材料と
しては、従来からＸ線透過率が高く、しかも高剛性であ
る炭化ケイ素（ＳｉＣ）や窒化ケイ素（ＳｉＮ）が用い
られてきたが、近年さらに高剛性な材料として結晶ダイ
ヤモンドの利用が検討されている。Therefore, as a membrane material for an X-ray mask, silicon carbide (SiC) or silicon nitride (SiN), which has a high X-ray transmittance and high rigidity, has been used. Use of crystalline diamond as a rigid material is being studied.
【０００８】ダイヤモンドの薄膜はヤング率が大きく高
剛性であるため、Ｘ線吸収体３をエッチング除去した場
合、またＳＲ光の照射によりＸ線吸収体膜の応力が変化
した場合にも微細パターン３ａの位置ずれ（歪み）が生
じにくく、Ｘ線マスクの位置精度を高めることができる
という特長がある。Since the diamond thin film has a high Young's modulus and a high rigidity, the fine pattern 3a can be formed even when the X-ray absorber 3 is removed by etching or when the stress of the X-ray absorber film changes due to SR light irradiation. Are less likely to cause positional displacement (distortion), and the positional accuracy of the X-ray mask can be improved.
【０００９】[0009]
【発明が解決しようとする課題】従来のダイヤモンド薄
膜は絶縁膜であるので、電子ビーム（ＥＢ）等でパター
ンの描画や回路パターンの検査を行ったり、ＳＲ露光を
行う場合、局所的なチャージアップが生じて不鮮明なパ
ターン像や歪みのあるパターン像となったり、極端な場
合にはＥＢ像が得られなくなったりする。このため、寸
法精度の高い描画・検査やＸ線リソグラフィーが行いに
くいという問題点があった。Since the conventional diamond thin film is an insulating film, when drawing a pattern or inspecting a circuit pattern with an electron beam (EB) or the like or performing SR exposure, a local charge-up occurs. Occurs, resulting in an unclear pattern image or a distorted pattern image. In an extreme case, an EB image cannot be obtained. Therefore, there is a problem that it is difficult to perform drawing / inspection and X-ray lithography with high dimensional accuracy.
【００１０】この発明は上記のような問題点を解消する
ためになされたもので、高剛性のメンブレンを有しなが
ら、上述の絶縁性ダイヤモンド薄膜に伴うパターン像の
歪み等が生じないＸ線マスクを提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has an X-ray mask which has a highly rigid membrane and does not cause distortion of a pattern image associated with the above-mentioned insulating diamond thin film. The purpose is to provide.
【００１１】[0011]
【課題を解決するための手段】この発明に係るＸ線マス
クは、シリコン基板上へのダイヤモンド膜形成時に、メ
タンに対するジボランの混合比を３％以上１０％未満と
することにより、ホウ素を含有しかつ抵抗率が10 -1 Ω・
ｃｍ以下であるダイヤモンド膜を含むＸ線透過性のメン
ブレンと，メンブレン上に所定のパターンに沿って設け
られたＸ線吸収体と，を備える。An X-ray mask according to the present invention is used for forming a diamond film on a silicon substrate.
Mixing ratio of diborane to tan with 3% or more and less than 10%
By doing so, it contains boron and has a resistivity of 10 -1 Ω
cm X-ray transparent membrane including diamond film
Provided along a predetermined pattern on the membrane and the membrane
X-ray absorber provided.
【００１２】[0012]
【作用】この発明におけるＸ線マスクは、メンブレンが
ダイヤモンド微結晶からなるため高剛性を有し、かつこ
のダイヤモンド微結晶には導電性が付与されており、さ
らに反射防止膜が導電性であるため、回路検査用に電子
ビームを当てたときも、アースの効果によってチャージ
アップを生じることがなく鮮明なパターン像を得ること
ができる。また、Ｘ線露光用にＳＲ光を照射したとき
も、Ｘ線吸収体から出てくる二次電子を安定に外部へ逃
がすことができるので、パターンの歪みを生じることも
ない。[Action] X-ray mask of this invention, the membrane has a high rigidity because of diamond crystallites, and has conductivity is imparted to the diamond crystallites, and
Further, since the antireflection film is conductive, a clear pattern image can be obtained without charge-up due to the effect of the ground even when an electron beam is applied for circuit inspection. Further, even when SR light is irradiated for X-ray exposure, secondary electrons coming out of the X-ray absorber can be stably released to the outside, so that pattern distortion does not occur.
【００１３】[0013]
【実施例】実施例１． 以下、この発明を図について説明する。図１において、
１，３，３ａ，４および５は、先の図４に示したものと
同じである。そして６は、ホウ素（導電性不純物）を添
加したダイヤモンド微結晶からなるメンブレン、７はメ
ンブレン６の上（Ｘ線入射側）に形成される反射防止膜
である。メンブレン６はダイヤモンドを主要な材料とす
るが、ホウ素を含有するため導電性となる。また、反射
防止膜７はスパッタ成膜等で形成されるＳｉＮ膜などを
用いるが、メンブレン６と同様十分な導電性を有するも
のにする。 [Embodiment 1] Hereinafter, the present invention will be described with reference to the drawings. In FIG.
1, 3, 3a, 4, and 5 are the same as those shown in FIG. Reference numeral 6 denotes a membrane made of diamond microcrystals to which boron (conductive impurities) is added, and reference numeral 7 denotes an antireflection film formed on the membrane 6 (on the X-ray incident side). The membrane 6 is mainly made of diamond, but becomes conductive because it contains boron. The antireflection film 7 is made of a SiN film or the like formed by sputtering or the like, and has sufficient conductivity like the membrane 6 .
【００１４】図１のＸ線マスクにおける微細パターン３
ａを電子ビームで検査する場合には、電子ビームがそれ
ぞれ導電性のＸ線吸収体３→反射防止膜７→メンブレン
６→シリコン基板１→支持枠４を経由してアースされる
ため、従来のＸ線マスクにみられたような局所的なチャ
ージアップは生じず、鮮明なパターン像を得ることがで
きる。また、ＳＲ光を照射してＸ線露光を行う際にも、
Ｘ線吸収体３から出てくる二次電子を安定に外部へ逃が
すことができるため、パターンの歪みを生じることもな
い。Fine pattern 3 in X-ray mask of FIG. 1
When inspecting a by electron beam, the electron beam is grounded via the barrier layer 7 → membrane 6 → silicon substrate 1 → the support frame 4 respective conductive X-ray absorber 3 → reflections, conventional No local charge-up occurs as in the X-ray mask described above, and a clear pattern image can be obtained. Also, when performing X-ray exposure by irradiating SR light,
Since secondary electrons emitted from the X-ray absorber 3 can be stably released to the outside, pattern distortion does not occur.
【００１５】次に、図１のＸ線マスクに用いるメンブレ
ン６の製造方法を説明する。図２は、メンブレン６を成
膜するためのダイヤモンド膜合成装置の構成図である。
このダイヤモンド膜合成装置は、マイクロ波放電法と称
される成膜方法を利用する。図において、１０は反応チ
ャンバ、１１は反応チャンバ内に設置される石英管、１
２は石英管１１の上方に設けられる原料供給孔、１３は
石英管１１の下方に設けられる排気孔、１４は石英管１
１内に設けられるシリコン基板１のホルダ、１５はマイ
クロ波電源、１６はスライド可能なマイクロ波反射板で
ある。石英管１１内は真空排気装置（図示せず）により
所定圧力に保たれている。Next, a method of manufacturing the membrane 6 used for the X-ray mask of FIG. 1 will be described. FIG. 2 is a configuration diagram of a diamond film synthesizing apparatus for forming the membrane 6.
This diamond film synthesizing apparatus utilizes a film forming method called a microwave discharge method. In the figure, 10 is a reaction channel.
Yanba, 11 quartz tube installed in a reaction chamber, 1
2 is a raw material supply hole provided above the quartz tube 11, 13 is an exhaust hole provided below the quartz tube 11, and 14 is a quartz tube 1
Silicon substrate 1 of a holder provided in the 1, 15 microwave power, 16 is a slide which can be microwave reflector. The inside of the quartz tube 11 is maintained at a predetermined pressure by a vacuum exhaust device (not shown).
【００１６】この装置においては、ダイヤモンド膜形成
のための原料ガス（炭素源）として、通常メタンガス
（ＣＨ4）と水素ガス（Ｈ2）の混合気を用い、混合比
（ＣＨ4／Ｈ2）は、０．２〜１０％（すなわち、ＣＨ4
／Ｈ2の体積比が０．００２〜０．１０）程度に設定す
る。なお、炭素源は、他の炭化水素ガスやアルコール類
でもよい。In this apparatus, a mixture of methane gas (CH 4 ) and hydrogen gas (H 2 ) is usually used as a source gas (carbon source) for forming a diamond film, and a mixture ratio (CH 4 / H 2 ) is used. Is 0.2 to 10% (ie, CH 4
/ Volume ratio of H 2 is set to 0.002 to 0.10) degree. The carbon source may be another hydrocarbon gas or alcohol.
【００１７】さて、このダイヤモンド膜合成装置におい
て、マイクロ波電源１５をＯＮにし、周波数２．４５Ｇ
Ｈｚのマイクロ波を石英管１１内に供給すると、ホルダ
１４の直上でマイクロ波放電が生じ、シリコン基板１は
イオン衝撃により７００〜９００℃程度まで昇温する。
その後、原料供給孔１２から原料ガスを供給すると、原
料ガスはマイクロ波放電により分解され、ＣＨ3 ラジカ
ルやＨ原子が生じて、シリコン基板１の表面にダイヤモ
ンド微結晶からなる膜が形成される。Now, in this diamond film synthesizing apparatus, the microwave power supply 15 is turned on and the frequency 2.45G is set.
When a microwave of Hz is supplied to the quartz tube 11, the microwave discharge occurs immediately above the holder 1 4, the silicon substrate 1 is heated to about 700 to 900 ° C. by ion bombardment.
Thereafter, when the raw material gas is supplied from the raw material supply hole 12, the raw material gas is decomposed by microwave discharge to generate CH3 radicals and H atoms, and a film made of diamond microcrystals is formed on the surface of the silicon substrate 1.
【００１８】なお、メンブレン６は、こうして形成され
るダイヤモンド膜中にさらにホウ素（導電性不純物）を
ドーピングして完成するが、導電性不純物の添加は、原
料ガス中にこの導電性不純物を含むガスを混合すること
により、達成される。そこで、上記混合気等にホウ素を
含むジボランガス（Ｂ2Ｈ6）を添加した場合におけるダ
イヤモンド膜の抵抗率の変化を図３に示す。混合ガス中
のホウ素濃度が２％の場合は抵抗率は１Ω・ｃｍ以上と
高い値を示すが、ホウ素濃度（Ｂ2Ｈ6／ＣＨ4）の上昇
に伴って抵抗率は小さくなり、特にホウ素濃度が３％
（Ｂ2Ｈ6／ＣＨ4の体積比が０．０３）以上のときには1
0 -1 Ω・ｃｍ以下と実用上十分な小さい値となることが
分かる。ただし、このホウ素の濃度は１０％（Ｂ2Ｈ6／
ＣＨ4の体積比が０．１０）以上になると、メンブレン
６中にＢ4Ｃが生成するため好ましくない。The membrane 6 is completed by doping boron (conductive impurities) into the diamond film thus formed. The conductive impurities are added by adding a gas containing the conductive impurities to the raw material gas. Is achieved by mixing Therefore, indicating the change in the resistivity of the dust <br/> Iyamondo film in the case of adding diborane gas (B 2 H 6) containing boron in the mixture or the like in FIG. 3. In mixed gas
When the boron concentration is 2%, the resistivity is 1 Ω · cm or more.
Although the resistivity is high, the resistivity decreases as the boron concentration (B 2 H 6 / CH 4 ) increases.
When the volume ratio of B 2 H 6 / CH 4 is 0.03 or more , 1
It turns out that it is a practically small value of 0 −1 Ω · cm or less . However, this boron concentration is 10% (B 2 H 6 /
When the volume ratio of CH 4 is 0.10) or more, it is not preferable because B 4 C is generated in the membrane 6.
【００１９】なお本実施例ではマイクロ波放電法により
ホウ素を含有するメンブレンを成膜する方法について示
したが、成膜方法はこの方法に限るものではなく、アー
クを用いた放電、熱フィラメント法、アセチレン炎を用
いた方法など種々のダイヤモンド形成法を用いてダイヤ
モンド膜中にホウ素を含有させることができるならば、
本実施例と同様の導電性で高剛性のメンブレンを得るこ
とができる。また導電性不純物を含む添加ガスもＢ2 Ｈ
6 に限るものではなく、Ｂ2 Ｏ3 やホウ素を含む有機材
料、およびリン（Ｐ）やヒ素(As)等の導電性不純物を用
いて、比抵抗を下げることもできる。その他、ダイヤモ
ンド膜の成膜後、Ｂ+ やＰ+ 等の不純物イオンビームを
ダイヤモンド膜中に照射しても本実施例と同様のメンブ
レンを得ることができる。In this embodiment, a method of forming a membrane containing boron by a microwave discharge method has been described. However, the method of forming the film is not limited to this method. Discharge using an arc, hot filament method, if it is possible to incorporate boron in da unpleasant <br/> Mond film using a variety of diamond forming method such as a method using acetylene flame,
A conductive and high-rigidity membrane similar to that of this embodiment can be obtained. The additive gas containing conductive impurities is also B2H.
The specific resistance can be reduced by using an organic material containing B2O3 or boron and a conductive impurity such as phosphorus (P) or arsenic (As). In addition, a membrane similar to that of this embodiment can be obtained by irradiating the diamond film with an impurity ion beam such as B + or P + after the formation of the diamond film.
【００２０】[0020]
【発明の効果】以上のように、この発明によれば、高剛
性でかつ導電性のメンブレンと、導電性の反射防止膜と
を備えたＸ線マスクが得られるため、応力の影響による
微細パターンの変位がなく、かつ電子ビームによるパタ
ーンの描画・回路検査時やＸ線リソグラフィー時にも、
局所的なチャージアップによるパターン像の歪み・鮮明
度の低下が生じない。As is evident from the foregoing description, according to the present invention, the Menbure emissions of high rigidity at and electrically conductive, a conductive anti-reflection film and
Since an X-ray mask provided with is obtained, there is no displacement of a fine pattern due to the influence of stress, and at the time of pattern drawing / circuit inspection or X-ray lithography by an electron beam,
The distortion and sharpness of the pattern image due to local charge-up do not occur.
【図１】この発明の一実施例によるＸ線マスクの断面図
である。FIG. 1 is a sectional view of an X-ray mask according to an embodiment of the present invention.
【図２】図１のＸ線マスクに用いるメンブレンを製造す
るダイヤモンド膜合成装置の構成図である。FIG. 2 is a configuration diagram of a diamond film synthesizing apparatus for producing a membrane used for the X-ray mask of FIG.
【図３】図１のＸ線マスクに用いるメンブレンにおける
ホウ素濃度と比抵抗の関係を示すグラフ図である。FIG. 3 is a graph showing a relationship between a boron concentration and a specific resistance in a membrane used for the X-ray mask of FIG.
【図４】従来のＸ線マスクの断面図である。FIG. 4 is a cross-sectional view of a conventional X-ray mask.
３ Ｘ線吸収体 ６ メンブレン 3 X-ray absorber 6 Membrane
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山下 博明 埼玉県大宮市北袋町１−297 三菱マテ リアル株式会社 中央研究所内 (72)発明者 松井 安次 尼崎市塚口本町８丁目１番１号 三菱電 機株式会社 中央研究所内 (72)発明者 丸本 健二 尼崎市塚口本町８丁目１番１号 三菱電 機株式会社 中央研究所内 (72)発明者 矢部 秀毅 尼崎市塚口本町８丁目１番１号 三菱電 機株式会社 中央研究所内 (56)参考文献 特開 平４−107810（ＪＰ，Ａ) 特開 昭58−135117（ＪＰ，Ａ) 特開 平２−199098（ＪＰ，Ａ) ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hiroaki Yamashita 1-297 Kitabukuro-cho, Omiya-shi, Saitama Mitsubishi Materials Corporation Central Research Laboratory (72) Inventor Yuji Matsui 8-1-1 Honcho Tsukaguchi, Amagasaki Mitsubishi Inside the Central Research Laboratory of Electric Machinery Co., Ltd. (72) Kenji Marumoto 8-1-1 Tsukaguchi Honcho, Amagasaki City Mitsubishi Electric Corporation Central Research Laboratory (72) Hideki Yabe 8-1-1 Tsukaguchi Honcho Amagasaki City (56) References JP-A-4-107810 (JP, A) JP-A-58-135117 (JP, A) JP-A-2-199098 (JP, A)
Claims (1)
時に、メタンに対するジボランの混合比を３％以上１０
％未満とすることにより、ホウ素を含有しかつ抵抗率が
10 -1 Ω・ｃｍ以下である前記ダイヤモンド膜を含むＸ線
透過性のメンブレンと，前記メンブレン上に所定のパタ
ーンに沿って設けられたＸ線吸収体と，を備えることを
特徴とするＸ線マスク。1. A method of forming a diamond film on a silicon substrate.
Sometimes, the mixing ratio of diborane to methane is 3% or more and 10%.
% , It contains boron and the resistivity is
10 and X-ray transparent membrane including the diamond film is less than -1 Ω · cm, a predetermined pattern on the membrane
An X-ray absorber provided along the pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18374092A JP3220523B2 (en) | 1992-07-10 | 1992-07-10 | X-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18374092A JP3220523B2 (en) | 1992-07-10 | 1992-07-10 | X-ray mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0629193A JPH0629193A (en) | 1994-02-04 |
| JP3220523B2 true JP3220523B2 (en) | 2001-10-22 |
Family
ID=16141150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18374092A Expired - Fee Related JP3220523B2 (en) | 1992-07-10 | 1992-07-10 | X-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3220523B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985493A (en) * | 1998-04-08 | 1999-11-16 | Lucent Technologies Inc. | Membrane mask for projection lithography |
| JP3990519B2 (en) | 1999-09-30 | 2007-10-17 | 富士通株式会社 | Fan unit |
| JP2003321296A (en) * | 2002-04-25 | 2003-11-11 | Shin Etsu Chem Co Ltd | Diamond film and method for producing the same |
| CN110050126B (en) * | 2017-03-31 | 2021-05-07 | 三菱电机株式会社 | Industrial equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS623257A (en) * | 1985-06-28 | 1987-01-09 | Toshiba Corp | Formation of mask pattern and mask base used for it |
| JPH02241019A (en) * | 1989-03-15 | 1990-09-25 | Canon Inc | X-ray mask blanks, x-ray mask structure body, x-ray aligner and x-ray exposure method |
| JP3171590B2 (en) * | 1990-08-28 | 2001-05-28 | 住友電気工業株式会社 | X-ray mask and manufacturing method thereof |
| JP2924146B2 (en) * | 1990-09-21 | 1999-07-26 | 凸版印刷株式会社 | X-ray exposure mask and method of manufacturing the same |
-
1992
- 1992-07-10 JP JP18374092A patent/JP3220523B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0629193A (en) | 1994-02-04 |
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