JPH06260422A - Method and device for heating glass substrate - Google Patents
Method and device for heating glass substrateInfo
- Publication number
- JPH06260422A JPH06260422A JP7290793A JP7290793A JPH06260422A JP H06260422 A JPH06260422 A JP H06260422A JP 7290793 A JP7290793 A JP 7290793A JP 7290793 A JP7290793 A JP 7290793A JP H06260422 A JPH06260422 A JP H06260422A
- Authority
- JP
- Japan
- Prior art keywords
- heating
- glass substrate
- plate
- substrate
- far infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体製造装置の１つで
あるＣＶＤ装置の基板加熱装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heating apparatus for a CVD apparatus which is one of semiconductor manufacturing apparatuses.
【０００２】[0002]
【従来の技術】液晶表示ユニットはガラス基板に多数の
半導体素子を形成してあり、この半導体素子を形成する
為、プラズマＣＶＤ装置によって成膜を行う。又、成膜
は減圧下所定の温度で行われ、成膜の準備工程として真
空中で予熱する。2. Description of the Related Art In a liquid crystal display unit, a large number of semiconductor elements are formed on a glass substrate, and in order to form these semiconductor elements, a film is formed by a plasma CVD apparatus. The film formation is performed under a reduced pressure at a predetermined temperature, and preheating is performed in a vacuum as a film formation preparation step.
【０００３】真空下では対流による加熱を行えない為、
加熱は熱輻射か、或は熱伝導によらなければならない。
被加熱物体がガラスの場合、赤外線吸収波長が高温側に
ない為、従来より熱伝導方式による加熱が採用されてい
た。Since heating by convection cannot be performed under vacuum,
Heating must be by heat radiation or heat conduction.
When the object to be heated is glass, the infrared absorption wavelength is not on the high temperature side, so heating by a heat conduction method has been conventionally used.
【０００４】従来の基板加熱装置としては以下に示すも
のがある。The following are conventional substrate heating devices.
【０００５】図１１は所謂インライン方式のＣＶＤ装置
の基板加熱装置を示すものであり、垂直姿勢で移動可能
に垂設された基板搬送用のホルダ（金属製でアノード電
極を兼ねる）１を具備し、該ホルダ１に所要枚数のガラ
ス基板２が装着され、ホルダ１の両側には近赤外線を発
する加熱ランプ３（例えばＩｎｆｒａｒｅｄ Ｌａｍ
ｐ）が配設される。図中、４は反射板、５は真空槽であ
る。FIG. 11 shows a so-called in-line type substrate heating device of a CVD device, which is provided with a substrate transfer holder (made of metal which also serves as an anode electrode) 1 vertically movably mounted vertically. , A required number of glass substrates 2 are mounted on the holder 1, and a heating lamp 3 (for example, Infrared Lam) that emits near infrared rays is provided on both sides of the holder 1.
p) is provided. In the figure, 4 is a reflector and 5 is a vacuum chamber.
【０００６】図１１で示す従来例では、前記加熱ランプ
３から発せられる近赤外線を含む電磁波を前記ホルダ１
に吸収させ、先ず該ホルダ１を加熱し、更に該ホルダ１
により、熱伝導によって前記ガラス基板２を加熱するも
のである。In the conventional example shown in FIG. 11, the holder 1 receives electromagnetic waves including near infrared rays emitted from the heating lamp 3.
First, the holder 1 is heated, and then the holder 1
To heat the glass substrate 2 by heat conduction.
【０００７】図１２は枚葉式のＣＶＤ装置の基板加熱装
置を示すものであり、ガラス基板２を水平姿勢で保持す
る基板保持プレート６を昇降可能に具備し、該基板保持
プレート６の上方に近赤外線を発する加熱ランプ３が配
設され、前記基板保持プレート６の下方には冷却板７が
配設されている。図中、４は反射板、５は真空槽であ
る。FIG. 12 shows a substrate heating apparatus of a single-wafer CVD apparatus, which is provided with a substrate holding plate 6 for holding the glass substrate 2 in a horizontal position so that it can be moved up and down, and above the substrate holding plate 6. A heating lamp 3 that emits near infrared rays is arranged, and a cooling plate 7 is arranged below the substrate holding plate 6. In the figure, 4 is a reflector and 5 is a vacuum chamber.
【０００８】[0008]
【発明が解決しようとする課題】ところが、上記した従
来例の内、図１１で示すものは基板が加熱され温度が上
昇すると、基板の自重より特に基板中央部がホルダ１側
に撓む。この為、ガラス基板２とホルダ１との密着性が
低下し、熱伝導性が悪くなる。従って、ガラス基板２内
の温度分布が不均一となると共に加熱時間が長くなり、
生成膜の均質性を低下させると共にスループット低下を
招く。ホルダ１は繰返し使用するので、常温付近迄冷却
し、その状態から加熱する必要があるが、ホルダ１の熱
膨張率がアルミニウム材で２．５６×１０-5／℃，１０
０℃〜３００℃であるのに対して、ガラス基板２の熱膨
張率は４．６×１０-6／℃，０℃〜３００℃と大きく異
なる為、ガラス基板２のクランプが困難で密着性を確保
することができなくやはり熱伝導性が低下し、ガラス基
板２内の温度分布が不均一となる。However, among the above-mentioned conventional examples shown in FIG. 11, when the substrate is heated and the temperature rises, the central portion of the substrate is bent toward the holder 1 side due to its own weight. For this reason, the adhesion between the glass substrate 2 and the holder 1 is lowered, and the thermal conductivity is deteriorated. Therefore, the temperature distribution in the glass substrate 2 becomes non-uniform, and the heating time becomes long,
This lowers the homogeneity of the produced film and lowers the throughput. Since the holder 1 is used repeatedly, it is necessary to cool it to near room temperature and heat it from that state. However, the coefficient of thermal expansion of the holder 1 is 2.56 × 10 −5 / ° C., 10 for aluminum material.
While the glass substrate 2 has a coefficient of thermal expansion of 4.6 × 10 −6 / ° C. and 0 ° C. to 300 ° C., it is difficult to clamp the glass substrate 2 and the adhesion is high. Cannot be ensured and the thermal conductivity is lowered, and the temperature distribution in the glass substrate 2 becomes non-uniform.
【０００９】又、図１２で示す従来例では、熱の伝達量
はガラス基板の裏面と基板保持プレート６の表面との接
触状態に影響されるので、所定の安定な温度を得る為に
は、長時間ガラス基板２と基板保持プレート６を接触さ
せ温度飽和に近づけねばならない。これは処理能力の低
下となっていた。Further, in the conventional example shown in FIG. 12, the amount of heat transfer is affected by the contact state between the back surface of the glass substrate and the surface of the substrate holding plate 6, so in order to obtain a predetermined stable temperature, It is necessary to bring the glass substrate 2 and the substrate holding plate 6 into contact with each other for a long period of time so as to approach temperature saturation. This was a decrease in processing capacity.
【００１０】更に、所定温度の基板保持プレート６上
に、常温又は常温近傍のガラス基板２を載置すると基板
の接触面が急加熱されて反りを発生し、基板保持プレー
ト６とガラス基板２とが部分接触となり、極部加熱とな
って大きな温度分布むらを生じ成膜の不均質を招く。こ
のガラス基板２の反りを解消する為には基板保持プレー
ト６の加熱初めは常温近傍であることが要求され、該基
板保持プレート６は前記冷却板７によって冷却されなけ
ればならない。従って、基板保持プレート６の昇降装置
が必要となり、機構が複雑となる。Further, when the glass substrate 2 at or near room temperature is placed on the substrate holding plate 6 at a predetermined temperature, the contact surface of the substrate is rapidly heated and warpage occurs, so that the substrate holding plate 6 and the glass substrate 2 Results in partial contact, resulting in extreme heating and uneven temperature distribution, resulting in inhomogeneous film formation. In order to eliminate the warp of the glass substrate 2, it is required that the temperature of the substrate holding plate 6 is near room temperature at the beginning of heating, and the substrate holding plate 6 must be cooled by the cooling plate 7. Therefore, an elevating device for the substrate holding plate 6 is required, and the mechanism becomes complicated.
【００１１】更に上記２つの従来例に於いては、ホルダ
１或は基板保持プレート６とガラス基板２が接触する
為、パーティクル発生の原因となる。更に又、熱接触抵
抗は接触面の仕上がり精度によって異なるので、ホルダ
１或は基板保持プレート６は、熱変形がなく表面仕上げ
が高精度なものが要求され非常に高価となる。Furthermore, in the above two conventional examples, the holder 1 or the substrate holding plate 6 and the glass substrate 2 are in contact with each other, which causes the generation of particles. Furthermore, since the thermal contact resistance varies depending on the finishing accuracy of the contact surface, the holder 1 or the substrate holding plate 6 is required to have a high surface finish without thermal deformation, which is very expensive.
【００１２】前記した様に、熱伝導による加熱方法に於
いては、熱源物体の熱歪み、ガラスの熱歪みにより接触
状態は非常に悪く、又相互の接触界面状態によって熱の
伝わりが違ってくる。これを解決する為に、この界面に
気体を封入し、気体の熱伝導を利用する方法があるが、
気体の封込めにはガラス基板の端部をクランプし気体が
逃げないようにしなければならない。しかしこのクラン
プはガラスの熱歪みに対し強制的な応力を加えることと
なり熱衝撃による破壊を招く。As described above, in the heating method by heat conduction, the contact state is very bad due to the heat strain of the heat source object and the heat strain of the glass, and the heat transfer is different depending on the mutual contact interface state. . In order to solve this, there is a method of enclosing a gas in this interface and utilizing the heat conduction of the gas.
To contain the gas, the edge of the glass substrate must be clamped to prevent the gas from escaping. However, this clamp applies a compulsive stress to the thermal strain of the glass, which causes destruction by thermal shock.
【００１３】本発明は斯かる実情に鑑み、均一な加熱温
度分布が得られ、加熱時の基板の反りを防止し、更にパ
ーティクルの発生を抑止可能な基板加熱装置を提供しよ
うとするものである。In view of the above situation, the present invention is to provide a substrate heating apparatus which can obtain a uniform heating temperature distribution, prevent the substrate from warping during heating, and further suppress the generation of particles. .
【００１４】[0014]
【課題を解決するための手段】本発明は、ガラス基板に
遠赤外線を吸収させ加熱することを特徴とするものであ
る。DISCLOSURE OF THE INVENTION The present invention is characterized in that a glass substrate is made to absorb far infrared rays and heated.
【００１５】[0015]
【作用】遠赤外線を吸収させて加熱するので非接触加熱
が可能であり、均一加熱が可能で加熱時の基板の反りを
防止でき、而もパーティクルの発生を抑止できる。Since far infrared rays are absorbed and heated, non-contact heating is possible, uniform heating is possible, warpage of the substrate during heating can be prevented, and particle generation can be suppressed.
【００１６】[0016]
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１７】本発明者等は、ガラス状Ｓi Ｏ2 の赤外線
透過範囲が４μm 迄であり、結晶状Ｓi Ｏ2 の赤外線吸
収波数は１１００cm-1と６２５cm-1とに吸収ピークがあ
ることに着目し、ガラス基板２に遠赤外線を吸収させて
加熱する方法で、ＣＶＤ装置で必要な温度、３００℃〜
４００℃迄加熱できるかどうかを種々の実験をして確認
した。実験の結果、図１０中実線で示す真空中の加熱曲
線を得るに至った。尚、図１０中破線で示す真空中の加
熱曲線は従来の熱伝導による加熱曲線である。[0017] The present inventors have infrared transmission range of the glass-like Si O2 is at up to 4 [mu] m, the infrared absorption wave number of crystalline Si O2 is focused on the fact that there is absorption peaks at 1100 cm -1 and 625 cm -1, This is a method of heating the glass substrate 2 by absorbing far infrared rays.
It was confirmed by various experiments whether heating up to 400 ° C. was possible. As a result of the experiment, the heating curve in vacuum shown by the solid line in FIG. 10 was obtained. The heating curve in vacuum indicated by the broken line in FIG. 10 is a conventional heating curve by heat conduction.
【００１８】図１０で示される様に、本方法でＣＶＤ装
置で必要な温度、３００℃〜４００℃迄加熱可能である
と共に従来の熱伝導による加熱に対して著しく加熱速度
が早いという結果が得られた。As shown in FIG. 10, according to the present method, it is possible to heat up to a temperature required by the CVD apparatus, that is, 300 ° C. to 400 ° C., and it is possible to obtain a result that the heating rate is remarkably high as compared with the conventional heat conduction. Was given.
【００１９】次に、遠赤外線によるガラス基板加熱装置
を図１により説明する。Next, a glass substrate heating device using far infrared rays will be described with reference to FIG.
【００２０】尚、図１２中で示したものと同一のものに
は同符号を付してある。The same parts as those shown in FIG. 12 are designated by the same reference numerals.
【００２１】本実施例は枚葉式ガラス基板加熱装置を示
し、真空槽５の上部に上反射板４を配設し、該上反射板
４の下方に所要数の加熱ランプ３を配設し、該加熱ラン
プ３の下方に遠赤外線発射板８を配設する。該遠赤外線
発射板８は前記加熱ランプ３からの近赤外線を吸収し、
遠赤外線を発するものであり、例えば前記加熱ランプ３
群を覆う板厚０．８mmのグラファイト製の板であり、前
記遠赤外線発射板８と前記ガラス基板２との距離は２mm
である。This embodiment shows a single-wafer type glass substrate heating apparatus, in which an upper reflection plate 4 is arranged above a vacuum chamber 5 and a required number of heating lamps 3 are arranged below the upper reflection plate 4. A far-infrared emitting plate 8 is arranged below the heating lamp 3. The far-infrared emitting plate 8 absorbs near-infrared rays from the heating lamp 3,
It emits far infrared rays, for example, the heating lamp 3
It is a graphite plate with a plate thickness of 0.8 mm that covers the group, and the distance between the far-infrared emitting plate 8 and the glass substrate 2 is 2 mm.
Is.
【００２２】該遠赤外線発射板８に対峙させ下反射板９
を配設し、該下反射板９と前記遠赤外線発射板８との間
にガラス基板２を支持装置１０により保持する。該支持
装置１０は前記下反射板９を貫通する支持針１１を有
し、該支持針１１は前記ガラス基板２の下面を数点で支
持する。A lower reflecting plate 9 facing the far infrared emitting plate 8
And the glass substrate 2 is held between the lower reflecting plate 9 and the far infrared ray emitting plate 8 by a supporting device 10. The supporting device 10 has a supporting needle 11 penetrating the lower reflecting plate 9, and the supporting needle 11 supports the lower surface of the glass substrate 2 at several points.
【００２３】前記加熱ランプ３を点灯する。該加熱ラン
プ３から発せられる近赤外線は直接或は前記上反射板４
に反射された後前記遠赤外線発射板８に吸収される。該
遠赤外線発射板８が前記加熱ランプ３により加熱される
と該遠赤外線発射板８は遠赤外線を発する。遠赤外線は
前記ガラス基板２に吸収され、該ガラス基板２が加熱さ
れる。該ガラス基板２を透過した遠赤外線は、前記下反
射板９に反射され有効に前記ガラス基板２に吸収され
る。The heating lamp 3 is turned on. The near infrared rays emitted from the heating lamp 3 are directly or in the upper reflection plate 4.
After being reflected by the far infrared ray emitting plate 8, it is absorbed by the far infrared ray emitting plate 8. When the far infrared ray emitting plate 8 is heated by the heating lamp 3, the far infrared ray emitting plate 8 emits far infrared rays. Far infrared rays are absorbed by the glass substrate 2, and the glass substrate 2 is heated. Far infrared rays transmitted through the glass substrate 2 are reflected by the lower reflection plate 9 and effectively absorbed by the glass substrate 2.
【００２４】本装置によるガラス基板２の加熱は、基本
的には非接触、非熱伝導の加熱であり、均一加熱が可能
でガラス基板２の反りも生じない。The heating of the glass substrate 2 by this apparatus is basically non-contact, non-heat conduction heating, uniform heating is possible, and the glass substrate 2 is not warped.
【００２５】図２に示す実施例では、真空槽５の下部に
加熱ランプ３を配設すると共に加熱ランプ３の上方に遠
赤外線発射板８を配設しガラス基板２を下面より加熱す
る様にしたものであり、作用については上記した図１の
実施例と同様である。In the embodiment shown in FIG. 2, the heating lamp 3 is arranged below the vacuum chamber 5 and the far-infrared emitting plate 8 is arranged above the heating lamp 3 so that the glass substrate 2 is heated from below. The operation is the same as that of the embodiment of FIG. 1 described above.
【００２６】図３に示す実施例では、真空槽５の上部下
部に対称的に加熱ランプ３、遠赤外線発射板８を配設し
たものである。該実施例によればガラス基板２を上下両
面より加熱する様にしたものであり、より急速加熱が可
能であると共に上下両面のより均一加熱が可能である。In the embodiment shown in FIG. 3, the heating lamp 3 and the far-infrared emitting plate 8 are symmetrically arranged in the upper and lower parts of the vacuum chamber 5. According to this embodiment, the glass substrate 2 is heated from both the upper and lower surfaces, which enables more rapid heating and more uniform heating on the upper and lower surfaces.
【００２７】図４は前記図１で示した実施例の加熱ラン
プ３と遠赤外線発射板８に代え、ヒータを内蔵した遠赤
外線発射源１２としたものであり、図５は前記図２で示
した実施例の加熱ランプ３と遠赤外線発射板８に代え、
ヒータを内蔵した遠赤外線発射源１２としたものであ
り、図６は前記図３で示した実施例の加熱ランプ３と遠
赤外線発射板８に代え、ヒータを内蔵した遠赤外線発射
源１２としたものである。FIG. 4 shows a far-infrared radiation source 12 having a built-in heater in place of the heating lamp 3 and far-infrared radiation plate 8 of the embodiment shown in FIG. 1, and FIG. 5 shows in FIG. Instead of the heating lamp 3 and the far-infrared ray emitting plate 8 of the embodiment,
This is a far-infrared ray emission source 12 with a built-in heater, and FIG. 6 shows a far-infrared ray emission source 12 with a built-in heater instead of the heating lamp 3 and the far-infrared ray emission plate 8 of the embodiment shown in FIG. It is a thing.
【００２８】図７は前記図１で示した実施例の加熱ラン
プ３と遠赤外線発射板８に代え、セラミック管又は石英
管にヒータを内蔵させた遠赤外線発射源１３としたもの
であり、図８は前記図２で示した実施例の加熱ランプ３
と遠赤外線発射板８に代え、セラミック管又は石英管に
ヒータを内蔵させた遠赤外線発射源１３としたものであ
り、図９は前記図３で示した実施例の加熱ランプ３と遠
赤外線発射板８に代え、セラミック管又は石英管等の遠
赤外線発射材料にヒータを内蔵させた遠赤外線発射源１
３としたものである。FIG. 7 shows a far infrared ray emission source 13 in which a heater is built in a ceramic tube or a quartz tube, instead of the heating lamp 3 and the far infrared ray emitting plate 8 of the embodiment shown in FIG. 8 is the heating lamp 3 of the embodiment shown in FIG.
The far infrared ray emitting plate 8 is replaced with a far infrared ray emitting source 13 in which a heater is built in a ceramic tube or a quartz tube, and FIG. 9 shows the heating lamp 3 and the far infrared ray emitting element of the embodiment shown in FIG. Far-infrared ray emission source 1 in which a heater is incorporated in a far-infrared ray emitting material such as a ceramic tube or a quartz tube instead of the plate 8
3 is set.
【００２９】尚、上記実施例は真空下でのガラス基板の
加熱について説明したが、常圧化、高圧下でのガラス基
板加熱についても同様に実施可能であることは勿論であ
り、又加熱ランプ３等の発熱体の形状配置を考慮するこ
とでガラス基板２の温度分布を制御することも可能であ
る。更に、発熱ランプとしてはハロゲンランプ等その他
のランプであってもよい。又、遠赤外線発射板の材料と
してはグラファイトの他にセラミック等が挙げられる。In the above embodiment, the heating of the glass substrate under vacuum has been described, but it goes without saying that the heating of the glass substrate under normal pressure and high pressure can be carried out in the same manner, and the heating lamp is used. It is also possible to control the temperature distribution of the glass substrate 2 by taking into consideration the geometrical arrangement of the heating elements such as 3. Further, the heat generating lamp may be another lamp such as a halogen lamp. Further, as the material of the far-infrared ray emitting plate, ceramics and the like can be mentioned in addition to graphite.
【００３０】[0030]
【発明の効果】以上述べた如く本発明によれば、下記の
優れた効果を発揮する。As described above, according to the present invention, the following excellent effects are exhibited.
【００３１】 加熱速度を大幅に増加させることがで
き、加熱時間の短縮と消費電力の減少を実現することが
できる。The heating rate can be significantly increased, and the heating time can be shortened and the power consumption can be reduced.
【００３２】 非接触加熱であるのでパーティクルの
発生を抑制することができる。Since non-contact heating is used, generation of particles can be suppressed.
【００３３】 ガラス基板に熱線を吸収させて加熱す
る方法であるので、熱歪みが少なくガラス基板の反りを
防止することができる。Since this is a method of heating the glass substrate by absorbing heat rays, the glass substrate can be prevented from warping with little thermal strain.
【００３４】 非接触加熱方法であるので、熱源の冷
却機構が省略でき装置の簡略化が図れると共に冷却時間
を省くことができ加熱工程のサイクルタイムを減少させ
ることができる。Since it is the non-contact heating method, the cooling mechanism of the heat source can be omitted, the apparatus can be simplified, the cooling time can be omitted, and the cycle time of the heating process can be reduced.
【００３５】 加熱工程のサイクルタイムの短縮、省
電力化、装置の簡略化より、スループットの向上、ラン
ニングコストの低減、装置の製作コストの低減を図り得
る。By shortening the cycle time of the heating process, saving power, and simplifying the device, throughput can be improved, running cost can be reduced, and device manufacturing cost can be reduced.
【図１】本発明の一実施例を示す概略図である。FIG. 1 is a schematic view showing an embodiment of the present invention.
【図２】本発明の他の実施例を示す概略図である。FIG. 2 is a schematic view showing another embodiment of the present invention.
【図３】本発明の他の実施例を示す概略図である。FIG. 3 is a schematic view showing another embodiment of the present invention.
【図４】本発明の他の実施例を示す概略図である。FIG. 4 is a schematic view showing another embodiment of the present invention.
【図５】本発明の他の実施例を示す概略図である。FIG. 5 is a schematic view showing another embodiment of the present invention.
【図６】本発明の他の実施例を示す概略図である。FIG. 6 is a schematic view showing another embodiment of the present invention.
【図７】本発明の他の実施例を示す概略図である。FIG. 7 is a schematic view showing another embodiment of the present invention.
【図８】本発明の他の実施例を示す概略図である。FIG. 8 is a schematic view showing another embodiment of the present invention.
【図９】本発明の他の実施例を示す概略図である。FIG. 9 is a schematic view showing another embodiment of the present invention.
【図１０】本発明による加熱特性を示す線図である。FIG. 10 is a diagram showing heating characteristics according to the present invention.
【図１１】従来例を示す平断面概略図である。FIG. 11 is a schematic plan sectional view showing a conventional example.
【図１２】他の従来例を示す立断面概略図である。FIG. 12 is a schematic vertical sectional view showing another conventional example.
２ ガラス基板 ３ 加熱ランプ ４ 上反射板 ５ 真空槽 ８ 遠赤外線発射板 ９ 下反射板 １０ 支持装置 １１ 支持針 １２ 遠赤外線発射源 １３ 遠赤外線発射源 2 glass substrate 3 heating lamp 4 upper reflecting plate 5 vacuum tank 8 far infrared emitting plate 9 lower reflecting plate 10 supporting device 11 supporting needle 12 far infrared emitting source 13 far infrared emitting source
Claims (3)
ることを特徴とするガラス基板加熱方法。1. A method of heating a glass substrate, which comprises heating a glass substrate by absorbing far infrared rays.
線発射源と対峙する位置にガラス基板を複数点で支持可
能としたことを特徴とするガラス基板加熱装置。2. A glass substrate heating apparatus having a far infrared ray emission source and capable of supporting a glass substrate at a plurality of points at positions facing the far infrared ray emission source.
線発射板から成る請求項２のガラス基板加熱装置。3. The glass substrate heating apparatus according to claim 2, wherein the far-infrared radiation source comprises a heating lamp and a far-infrared radiation plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7290793A JPH06260422A (en) | 1993-03-08 | 1993-03-08 | Method and device for heating glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7290793A JPH06260422A (en) | 1993-03-08 | 1993-03-08 | Method and device for heating glass substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06260422A true JPH06260422A (en) | 1994-09-16 |
Family
ID=13502899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7290793A Pending JPH06260422A (en) | 1993-03-08 | 1993-03-08 | Method and device for heating glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06260422A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002221394A (en) * | 2001-01-24 | 2002-08-09 | Showa Mfg Co Ltd | Heating device for electronic component |
| US6449428B2 (en) | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| JP2005260054A (en) * | 2004-03-12 | 2005-09-22 | Tokyo Electron Ltd | Plasma film forming apparatus, heat treatment apparatus, plasma film forming method and heat treatment method |
| JP2006156686A (en) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | Heat treatment system |
| JP2006190731A (en) * | 2005-01-04 | 2006-07-20 | Mitsubishi Heavy Ind Ltd | Substrate heating device, vacuum device and substrate heating method |
| US7218847B2 (en) | 2003-10-24 | 2007-05-15 | Ushio Denki Kabushiki Kasiha | Heating unit for heating a workpiece with light-absorbing heat conducting layer |
| JP2007329423A (en) * | 2006-06-09 | 2007-12-20 | Tokki Corp | Apparatus and method for heating substrate |
| JP2008202066A (en) * | 2007-02-16 | 2008-09-04 | Mitsubishi Heavy Ind Ltd | Vacuum processing device |
| US11814729B2 (en) | 2018-11-20 | 2023-11-14 | Nippon Electric Glass Co., Ltd. | Method for manufacturing glass article and method for heating thin sheet glass |
-
1993
- 1993-03-08 JP JP7290793A patent/JPH06260422A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6449428B2 (en) | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| JP2002221394A (en) * | 2001-01-24 | 2002-08-09 | Showa Mfg Co Ltd | Heating device for electronic component |
| US7218847B2 (en) | 2003-10-24 | 2007-05-15 | Ushio Denki Kabushiki Kasiha | Heating unit for heating a workpiece with light-absorbing heat conducting layer |
| JP2005260054A (en) * | 2004-03-12 | 2005-09-22 | Tokyo Electron Ltd | Plasma film forming apparatus, heat treatment apparatus, plasma film forming method and heat treatment method |
| JP2006156686A (en) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | Heat treatment system |
| JP2006190731A (en) * | 2005-01-04 | 2006-07-20 | Mitsubishi Heavy Ind Ltd | Substrate heating device, vacuum device and substrate heating method |
| JP2007329423A (en) * | 2006-06-09 | 2007-12-20 | Tokki Corp | Apparatus and method for heating substrate |
| JP2008202066A (en) * | 2007-02-16 | 2008-09-04 | Mitsubishi Heavy Ind Ltd | Vacuum processing device |
| US11814729B2 (en) | 2018-11-20 | 2023-11-14 | Nippon Electric Glass Co., Ltd. | Method for manufacturing glass article and method for heating thin sheet glass |
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