JP2008138986A - Heat treatment silicon plate and heat treatment furnace - Google Patents
Heat treatment silicon plate and heat treatment furnace Download PDFInfo
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- JP2008138986A JP2008138986A JP2006328016A JP2006328016A JP2008138986A JP 2008138986 A JP2008138986 A JP 2008138986A JP 2006328016 A JP2006328016 A JP 2006328016A JP 2006328016 A JP2006328016 A JP 2006328016A JP 2008138986 A JP2008138986 A JP 2008138986A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
- 239000010703 silicon Substances 0.000 title claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000010438 heat treatment Methods 0.000 title claims abstract description 61
- 238000002791 soaking Methods 0.000 claims abstract description 35
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
本発明は、均熱板や炉内の熱反射板などに用いられる熱処理用の大型シリコンプレートと、その熱処理炉に関する。 The present invention relates to a large-sized silicon plate for heat treatment used for a soaking plate, a heat reflecting plate in a furnace, and the like, and a heat treatment furnace therefor.
半導体シリコンウエハは、熱処理してウエハの基板表面にシリコン酸化膜が形成されるが、このシリコン酸化膜は１０μｍ程度の極めて薄い膜であり、膜厚が不均一にならないよう、均一に熱処理する必要がある。このため、従来、抵抗加熱や赤外線ランプを用いた熱処理炉において、均熱板を用いた熱処理が行なわれている。 A semiconductor silicon wafer is heat-treated to form a silicon oxide film on the substrate surface of the wafer. This silicon oxide film is an extremely thin film of about 10 μm and needs to be uniformly heat-treated so that the film thickness does not become non-uniform. There is. For this reason, conventionally, heat treatment using a soaking plate has been performed in a heat treatment furnace using resistance heating or an infrared lamp.
例えば、炉心管の周囲に設けた赤外線ランプを加熱源として用いる熱処理炉において、炉内に搬送される半導体基板と赤外線ランプとの間に赤外線を吸収する均熱板を設けた熱処理炉が知られている（特許文献１）。この炉は、赤外線ランプによって半導体基板を直接に加熱するのではなく、赤外線によって均熱板を加熱し、均熱板の全体が昇温することによって炉内温度を均一に加熱している。この均熱板としてシリコンカーバイド（ＳｉＣ）や金属シリコン（Ｓｉ）が用いられている。 For example, in a heat treatment furnace using an infrared lamp provided around a furnace tube as a heating source, a heat treatment furnace provided with a soaking plate that absorbs infrared light between a semiconductor substrate transported in the furnace and the infrared lamp is known. (Patent Document 1). In this furnace, the semiconductor substrate is not directly heated by an infrared lamp, but the soaking plate is heated by infrared rays, and the temperature of the entire soaking plate is raised to uniformly heat the furnace temperature. Silicon carbide (SiC) or metal silicon (Si) is used as the soaking plate.
従来の上記均熱手段は均熱板を加熱する形式であるため、均熱板が目的温度に加熱されるまでに時間がかかり、また熱量が消費される。さらに、従来のシリコンはシリコンインゴットを板状に切断して製造したものを用いており、大型の平板状シリコンが得られ難いので、熱処理炉の炉内全体に均熱板を設置するのに手間がかかる。
本発明は、従来の熱処理炉に設けられている均熱手段について上記問題を解決したものであり、熱処理炉内において熱反射よって炉内温度の均熱効果に優れた熱処理用シリコンプレートを提供し、また被熱処理部材を支持板と均熱板とを兼用することができる均熱手段として好適な熱処理用シリコンプレート、該シリコンプレートを設けた熱処理炉を提供する。 The present invention solves the above-mentioned problems with the soaking means provided in a conventional heat treatment furnace, and provides a silicon plate for heat treatment that is excellent in the soaking effect of the furnace temperature by heat reflection in the heat treatment furnace. In addition, there are provided a silicon plate for heat treatment suitable as a soaking unit capable of using a heat-treated member as both a support plate and a soaking plate, and a heat treatment furnace provided with the silicon plate.
本発明は、以下の構成によって従来の課題を解決した、熱処理用シリコンプレートに関する。
（１）被熱処理部材を載置する均熱板として用いられ、少なくとも一辺が５００ｍｍ以上の大型シリコン板からなることを特徴とする熱処理用シリコンプレート。
（２）熱処理炉の炉壁に設置され、炉内を均熱化する反射板として用いられることを特徴とする熱処理用シリコンプレート。
（３）水平ルツボの上方および下方にヒータを設け、水平ルツボに装入したシリコン原料を上下のヒータによって加熱溶融し、冷却して製造した平板状のシリコンプレートを用いた上記(１)または上記(２)に記載する熱処理用シリコンプレート。
（４）炉内を均熱化する反射板としてシリコンプレートを炉壁に設置したことを特徴とする熱処理炉。
The present invention relates to a silicon plate for heat treatment that solves the conventional problems with the following configuration.
(1) A silicon plate for heat treatment, which is used as a soaking plate on which a member to be heat treated is placed, and is made of a large silicon plate having at least one side of 500 mm or more.
(2) A silicon plate for heat treatment, which is installed on a furnace wall of a heat treatment furnace and used as a reflection plate for soaking the inside of the furnace.
(3) The above (1) or the above using a flat silicon plate that is provided by providing heaters above and below the horizontal crucible, and heating and melting the silicon raw material charged in the horizontal crucible with the upper and lower heaters and cooling The silicon plate for heat treatment described in (2).
(4) A heat treatment furnace characterized in that a silicon plate is installed on the furnace wall as a reflection plate for soaking the inside of the furnace.
本発明の熱処理用シリコンプレートは、被熱処理部材を載置する均熱板として用いられるものであり、例えば、水平ルツボの上方および下方にヒータを設け、水平ルツボに装入したシリコン原料を上下のヒータによって加熱溶融し、冷却して製造した平板状のシリコンプレートを用いた少なくとも一辺が５００ｍｍ以上の大型シリコン板によって形成されているので、４０インチ以上の大型プラズマテレビや大型液晶テレビなどの大型ディスプレイ用ガラス基板を熱処理する場合に、この大型ガラス基板の均熱板として好適である。 The heat-treating silicon plate of the present invention is used as a soaking plate for placing a member to be heat-treated. For example, a heater is provided above and below the horizontal crucible, and the silicon raw material charged in the horizontal crucible A large-sized display such as a large-sized plasma TV or large-sized liquid crystal television having a size of 40 inches or more is formed by a large-sized silicon plate having a side of 500 mm or more using a flat silicon plate manufactured by heating and melting with a heater and cooling. When the glass substrate for heat treatment is heat-treated, it is suitable as a soaking plate for this large glass substrate.
また本発明の熱処理用シリコンプレートは、熱処理炉の炉壁に設置され、炉内を均熱化する反射板として用いられるので、均熱板を加熱する従来の均熱手段とは異なり、このシリコンプレートを炉壁に設置した熱処理炉は熱損失が少なく、炉内の昇温時間が早いので熱処理効率が良い。 In addition, the silicon plate for heat treatment of the present invention is installed on the furnace wall of the heat treatment furnace and is used as a reflection plate for soaking the inside of the furnace, so that this silicon plate is different from the conventional soaking means for heating the soaking plate. The heat treatment furnace with the plate installed on the furnace wall has low heat loss and high heat treatment efficiency because the temperature rise time in the furnace is fast.
本発明の第一の態様に係る熱処理用シリコンプレートは、被熱処理部材を載置する均熱板として用いられるものであり、少なくとも一辺が５００ｍｍ以上の大型シリコン板からなることを特徴とする熱処理用シリコンプレートである。 The silicon plate for heat treatment according to the first aspect of the present invention is used as a heat equalizing plate on which a member to be heat-treated is placed, and is composed of a large silicon plate having at least one side of 500 mm or more. It is a silicon plate.
上記熱処理用シリコンプレートの一例を図１に示す。図示するように、大型シリコン板からなるシリコンプレート１０の上に、被熱処理部材１１、例えば、大型ディスプレイ用ガラス基板を水平に載せ、シリコンプレートと共に熱処理することによって、ガラス基板１１の全体がシリコンプレート１０によって加熱され、シリコンは熱伝導性が良いので、優れた均熱効果を得ることができる。
An example of the heat treatment silicon plate is shown in FIG. As shown in the drawing, a heat-treated
また、上記シリコンプレート１０は被熱処理部材を搬送する支持部材として利用することができるので、熱処理炉の炉内にあらかじめ均熱板を設置する必要がなく、熱処理炉の構造を簡単に形成することができる。
Further, since the
本発明の第二の態様に係る熱処理用シリコンプレートは、熱処理炉の炉壁に設置され、炉内を均熱化する反射板として用いられるものである。この態様を図２に示す。図示するように、熱処理炉２０の炉壁２１にシリコンプレート２２が内張されている。
The silicon plate for heat treatment according to the second aspect of the present invention is installed on the furnace wall of the heat treatment furnace, and is used as a reflection plate for soaking the inside of the furnace. This embodiment is shown in FIG. As shown in the drawing, a
図２に示す例では、熱処理炉２０の相対面する両側の炉壁２１、２２にヒータ２３が設けられており、他の相対面する両側の炉壁２４、２５にシリコンプレート２６が内張されている。なお、ヒータ２３を設けた炉壁２１、２２に、ヒータ２３の設置部分を除いてシリコンプレート２６を内張しても良い。
In the example shown in FIG. 2,
シリコンプレート２６を炉壁に設けることによって、ヒータ２３の熱がシリコンプレート２６によって炉内に反射されるので、炉内温度が均一化される。この構造によれば、シリコンプレート２６を加熱する必要がないので、熱効率が良く、昇温時間が短いので、効率よく熱処理することができる。
By providing the
上記熱処理用シリコンプレートとして用いる大型シリコン板は、小型のシリコン板を溶接やネジまたはピンなどによって接続して形成しても良いが、接続作業に手間がかかるので、例えば、水平ルツボの上方および下方にヒータを設け、水平ルツボに装入したシリコン原料を上下のヒータによって加熱溶融し、冷却して製造した平板状のシリコンプレートを用いると良い。 The large silicon plate used as the heat treatment silicon plate may be formed by connecting a small silicon plate by welding, screws, pins, or the like, but it takes time to connect, for example, above and below the horizontal crucible. It is preferable to use a flat silicon plate manufactured by heating and melting the silicon raw material charged in the horizontal crucible with the upper and lower heaters and cooling.
具体的には、図３に示すように、下部ヒータ３０の上にチルドプレート３１を設け、該プレート３１に水平ルツボ３２を載せ、該水平プレート３２の上方に上部ヒータ３３を設けた溶融装置を用い、水平ルツボ３２に装入した原料シリコン３４を上下のヒータ３０、３３によって加熱溶融した後に、チルドプレート３１に冷媒を通じて溶融シリコンを冷却し、平板状のシリコンプレートを製造する。
Specifically, as shown in FIG. 3, a melting apparatus in which a
上記製造方法によれば、冷却時に割れが少なく、大型のシリコンプレートを製造することができる。ルツボを側方から加熱する方法ではルツボ中央部と側端部との熱歪みが大きいので、例えば、一辺が５００mm以上の大型シリコンプレートを製造するのは難しいが、上記製造方法によれば、本発明の被熱処理部材を載置する均熱板として用いる熱処理用シリコンプレートを得ることができる。 According to the said manufacturing method, there are few cracks at the time of cooling, and a large sized silicon plate can be manufactured. In the method of heating the crucible from the side, since the thermal distortion between the crucible center and the side end is large, for example, it is difficult to manufacture a large silicon plate having a side of 500 mm or more. A heat-treating silicon plate used as a soaking plate on which the heat-treated member of the invention is placed can be obtained.
〔実施例１〕
８００mm角のディスプレイ用ガラス基板を、図３の方法によって製造したシリコンプレートに載置し、熱処理炉に装入して８００℃でアニール処理した。ガラス基板の中心部と周辺部の温度差は５℃であった。一方、本発明のシリコンプレートを用いない従来の熱処理炉によるアニール処理ではガラス基板の中心部と周辺部の温度差は２０℃であり、本発明のシリコンプレートを用いることによって優れた均熱効果が得られた。
[Example 1]
An 800 mm square glass substrate for display was placed on a silicon plate manufactured by the method of FIG. 3, placed in a heat treatment furnace, and annealed at 800 ° C. The temperature difference between the central part and the peripheral part of the glass substrate was 5 ° C. On the other hand, in the annealing process by the conventional heat treatment furnace not using the silicon plate of the present invention, the temperature difference between the central part and the peripheral part of the glass substrate is 20 ° C., and the use of the silicon plate of the present invention provides an excellent soaking effect. Obtained.
〔実施例２〕
熱処理炉（１０００mm×１０００mm×５００mm）について、図２に示すように、炉壁にシリコンプレートを内張したものを使用し、炉内を８００℃に昇温したところ、炉内中心部と炉内周辺部の温度差は５℃であった。一方、シリコンプレートを設けない熱処理炉における炉内中心部と炉内周辺部の温度差は２０℃であり、本発明のシリコンプレートを用いることによって優れた均熱効果が得られた。
[Example 2]
For a heat treatment furnace (1000 mm × 1000 mm × 500 mm), as shown in FIG. 2, a furnace wall with a silicon plate lined was used, and the temperature in the furnace was raised to 800 ° C. The temperature difference at the periphery was 5 ° C. On the other hand, the temperature difference between the central portion of the furnace and the peripheral portion in the heat treatment furnace without the silicon plate was 20 ° C., and an excellent soaking effect was obtained by using the silicon plate of the present invention.
１０−シリコンプレート、１１−ガラス基板、２０−熱処理炉、２１、２２−炉壁、２３−ヒータ、２４、２５−炉壁、２６−シリコンプレート。 10-silicon plate, 11-glass substrate, 20-heat treatment furnace, 21,22 furnace wall, 23-heater, 24, 25-furnace wall, 26-silicon plate.
Claims (4)
A silicon plate for heat treatment, which is used as a soaking plate on which a member to be heat treated is placed, and is made of a large silicon plate having at least one side of 500 mm or more.
A silicon plate for heat treatment, characterized in that it is installed on a furnace wall of a heat treatment furnace and used as a reflection plate for soaking the inside of the furnace.
3. A flat silicon plate produced by providing a heater above and below the horizontal crucible, heating and melting the silicon raw material charged in the horizontal crucible with the upper and lower heaters, and cooling it. Heat treatment silicon plate.
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Cited By (3)
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| JP2011058761A (en) * | 2009-09-14 | 2011-03-24 | Toyota Central R&D Labs Inc | Device for heating or cooling workpiece, workpiece storing means and reflow soldering method |
| EP2784422A2 (en) | 2013-03-28 | 2014-10-01 | Mitsubishi Materials Corporation | Silicon member and method of producing the same |
| US10508333B2 (en) | 2016-01-29 | 2019-12-17 | Samsung Electronics Co., Ltd. | Heating apparatus and substrate processing apparatus having the same |
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| JP2006156686A (en) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | Heat treatment system |
| WO2006104107A1 (en) * | 2005-03-29 | 2006-10-05 | Kyocera Corporation | Polycrystalline silicon substrate, method for producing same, polycrystalline silicon ingot, photoelectric converter and photoelectric conversion module |
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| JPH0653223A (en) * | 1992-07-28 | 1994-02-25 | Nec Corp | Heat treatment furnace |
| JP2006156686A (en) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | Heat treatment system |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011058761A (en) * | 2009-09-14 | 2011-03-24 | Toyota Central R&D Labs Inc | Device for heating or cooling workpiece, workpiece storing means and reflow soldering method |
| EP2784422A2 (en) | 2013-03-28 | 2014-10-01 | Mitsubishi Materials Corporation | Silicon member and method of producing the same |
| US20140291680A1 (en) * | 2013-03-28 | 2014-10-02 | Mitsubishi Materials Corporation | Silicon member and method of producing the same |
| KR20140118905A (en) | 2013-03-28 | 2014-10-08 | 미쓰비시 마테리알 가부시키가이샤 | Silicon member and method of producing the same |
| JP2017208571A (en) * | 2013-03-28 | 2017-11-24 | 三菱マテリアル株式会社 | Silicon member and method for manufacturing silicon member |
| US10770285B2 (en) | 2013-03-28 | 2020-09-08 | Mitsubishi Materials Corporation | Silicon member and method of producing the same |
| US10508333B2 (en) | 2016-01-29 | 2019-12-17 | Samsung Electronics Co., Ltd. | Heating apparatus and substrate processing apparatus having the same |
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