JPH06260387A - Stepper - Google Patents

Stepper

Info

Publication number
JPH06260387A
JPH06260387A JP5075287A JP7528793A JPH06260387A JP H06260387 A JPH06260387 A JP H06260387A JP 5075287 A JP5075287 A JP 5075287A JP 7528793 A JP7528793 A JP 7528793A JP H06260387 A JPH06260387 A JP H06260387A
Authority
JP
Japan
Prior art keywords
reticle
refrigerant
temperature
pipe
reduction projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5075287A
Other languages
Japanese (ja)
Inventor
Tetsuya Kaneda
哲弥 金田
Noboru Murata
昇 村田
Hiroyuki Inoue
博之 井上
Kohei Eguchi
公平 江口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP5075287A priority Critical patent/JPH06260387A/en
Publication of JPH06260387A publication Critical patent/JPH06260387A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To suppress temperature increase of a reticle during exposure of a wafer. CONSTITUTION:A pipe 7 is provided inside a reticle stage 4 and a refrigerant 8 is circulated and is allowed to flow through it by a circulator 9. A heat exchanger 10 is provided inside the cooling pipe 7 and a refrigerant 12 is allowed to flow inside the cooling pipe 11 communicating with the heat exchanger 10 by a circulator 13. The temperature of a reticle 3 is detected by a temperature sensor 14 and a control part 15 controls the circulators 9 and 13 based on the detection value, thus controlling the flow rate of the refrigerant 12 flowing to the heat exchanger 10 and that of the refrigerant 8 flowing through the cooling pipe 7. The reticle 3 is cooled by the refrigerant 8 and the temperature of the reticle 3 is maintained constantly, thus preventing the reticle 3 from being inflated due to temperature increase of the reticle 3 and the total overlapping accuracy of each layer from being reduced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置の製造時に
おいてウェーハにLSI等のパターンを転写する縮小投
影露光装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reduction projection exposure apparatus for transferring a pattern such as an LSI on a wafer when manufacturing a semiconductor device.

【0002】[0002]

【従来の技術】従来の縮小投影露光装置には、レチクル
の表面に異物が付着するのを防止するためのペリクル膜
を固定するペリクルフレームを備えたものがあった。こ
のペリクルフレームには、ペリクルフレームが熱膨張し
てペリクル膜が傾斜するのを防止する冷却機能付きペリ
クルを具備したものがある。
2. Description of the Related Art A conventional reduction projection exposure apparatus has a pellicle frame for fixing a pellicle film for preventing foreign matter from adhering to the surface of a reticle. Some pellicle frames include a pellicle with a cooling function that prevents the pellicle frame from tilting due to thermal expansion of the pellicle frame.

【0003】冷却機能付きペリクルを具備する縮小投影
露光装置については、特開平2−302757号公報に
記載されているが、この縮小投影露光装置の冷却機能部
について図3を用いて説明する。図3(a)は冷却機能
付きペリクルの縦断面図、図3(b)は図3(a)のb
−b線断面図である。
A reduction projection exposure apparatus having a pellicle with a cooling function is described in Japanese Patent Application Laid-Open No. 2-302757, and the cooling function section of this reduction projection exposure apparatus will be described with reference to FIG. 3A is a vertical cross-sectional view of the pellicle with a cooling function, and FIG. 3B is b of FIG. 3A.
It is a -b line sectional view.

【0004】図3(a)に示すように、このペリクル3
1は、ペリクルフレーム31bに接着剤によりペリクル
膜31aを貼り付けたものであり、ペリクルフレーム3
1bのペリクル膜31aを貼り付けた面の反対側に塗布
された接着剤31cによって不図示のレチクルに固定さ
れるものである。
As shown in FIG. 3A, this pellicle 3
Reference numeral 1 denotes a pellicle frame 31b having a pellicle film 31a attached thereto by an adhesive.
1b is fixed to a reticle (not shown) by an adhesive 31c applied to the side opposite to the surface on which the pellicle film 31a is attached.

【0005】図3(a)及び(b)に示すように、ペリ
クルフレーム31bの内部には、冷却水流路32が設け
られており、その両端はそれぞれ図示のように冷却水供
給口32a及び冷却水排出口32bに接続されている。
As shown in FIGS. 3 (a) and 3 (b), a pellicle frame 31b is provided with a cooling water flow path 32, and both ends thereof are provided with a cooling water supply port 32a and a cooling water, respectively, as shown in the drawing. It is connected to the water outlet 32b.

【0006】ペリクル31を縮小投影露光装置に装着し
て長時間にわたって使用すると、ペリクル31が加熱さ
れるが、ペリクルフレーム31bの内部の冷却水流路3
2には常に冷却水が流れており、ペリクルフレーム31
bの温度の上昇が防止され、ペリクル膜31aに加えら
れていた引っ張り力が維持できるため、ペリクル膜31
aの傾斜が防止される。これにより、露光精度の低下を
防止することが可能となる。
When the pellicle 31 is mounted on the reduction projection exposure apparatus and used for a long time, the pellicle 31 is heated, but the cooling water passage 3 inside the pellicle frame 31b is heated.
2, the cooling water always flows, and the pellicle frame 31
Since the temperature rise of b is prevented and the tensile force applied to the pellicle film 31a can be maintained, the pellicle film 31a can be maintained.
The inclination of a is prevented. This makes it possible to prevent the exposure accuracy from decreasing.

【0007】[0007]

【発明が解決しようとする課題】しかし、上述のような
冷却機能付きペリクルを具備する縮小投影露光装置で
は、ペリクル膜の傾斜は防止されるが、ウェーハ露光中
に、露光光がレチクルに繰り返し照射され、レチクルの
特にクロムパターン部が発熱し、レチクルの温度が上昇
し、レチクルが膨張するという問題は解決されない。
However, in the reduction projection exposure apparatus having the pellicle with a cooling function as described above, the tilt of the pellicle film is prevented, but the exposure light is repeatedly applied to the reticle during wafer exposure. However, the problem that the chrome pattern part of the reticle generates heat, the temperature of the reticle rises, and the reticle expands is not solved.

【0008】レチクルが膨張すると、各レイヤーの総合
重ね合わせ精度が低下するので、このレチクルの温度を
一定に保つことは重要である。
When the reticle expands, the overall overlay accuracy of each layer decreases, so it is important to keep the temperature of this reticle constant.

【0009】そこで、本発明の目的は、ウェーハ露光中
にレチクルの温度上昇を抑えることが可能な縮小投影露
光装置を提供することにある。
Therefore, an object of the present invention is to provide a reduction projection exposure apparatus capable of suppressing the temperature rise of a reticle during wafer exposure.

【0010】[0010]

【課題を解決するための手段】上記課題を解決するため
に、本発明の縮小投影露光装置においては、レチクルを
保持するレチクルステージの内部に配管を設け、この配
管に冷媒を流す冷却手段を設けたものである。
In order to solve the above problems, in the reduction projection exposure apparatus of the present invention, a pipe is provided inside a reticle stage that holds a reticle, and a cooling means for flowing a refrigerant is provided in this pipe. It is a thing.

【0011】なお、前記レチクルに接触するように設置
された温度センサと、この温度センサの検出値に基づい
て前記レチクルステージ内配管を流れる冷媒の温度また
は量を制御する制御手段とを設けるとよい。
A temperature sensor installed so as to contact the reticle, and control means for controlling the temperature or amount of the refrigerant flowing through the pipe inside the reticle stage based on the detection value of the temperature sensor may be provided. .

【0012】[0012]

【作用】本発明によれば、レチクルステージ内配管を流
れる冷媒によってレチクルが冷却されるので、レチクル
の温度上昇を抑えることが可能になり、レチクルの温度
上昇によるレチクルの膨張を防ぐことができる。
According to the present invention, since the reticle is cooled by the refrigerant flowing through the pipe inside the reticle stage, the temperature rise of the reticle can be suppressed and the reticle expansion due to the temperature rise of the reticle can be prevented.

【0013】なお、温度センサによりレチクルの温度を
検出し、この検出値に基づいて制御手段により冷媒の温
度または量を制御すると、レチクルの温度を一定に保つ
ことができる。
If the temperature of the reticle is detected by the temperature sensor and the temperature or amount of the refrigerant is controlled by the control means based on the detected value, the temperature of the reticle can be kept constant.

【0014】[0014]

【実施例】以下、本発明を実施例に基づき図1及び図2
を参照して説明する。図1は実施例における縮小投影露
光装置のレチクルステージの要部を示す図2のa−a線
拡大断面図、図2は実施例における縮小投影露光装置の
概略構成図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to FIGS.
Will be described with reference to. FIG. 1 is an enlarged cross-sectional view taken along the line aa of FIG. 2 showing a main part of a reticle stage of the reduction projection exposure apparatus in the embodiment, and FIG. 2 is a schematic configuration diagram of the reduction projection exposure apparatus in the embodiment.

【0015】図2において、露光光源1からでた露光光
2がレチクルステージ4上のレチクル3を通過し、レチ
クル3上のパターンが、縮小投影レンズ5を通してウェ
ーハ6上に転写される。
In FIG. 2, the exposure light 2 emitted from the exposure light source 1 passes through the reticle 3 on the reticle stage 4, and the pattern on the reticle 3 is transferred onto the wafer 6 through the reduction projection lens 5.

【0016】図1に示すように、レチクルステージ4の
内部に冷却配管7が設けられており、この冷却配管7の
中に空気または水等の冷媒8が循環器9によって循環さ
れて流されている。また、冷却配管7の中に熱交換器1
0が設けられ、この熱交換器10に通じる冷却配管11
の中にフロン等の冷媒12が循環器13によって流され
ている。
As shown in FIG. 1, a cooling pipe 7 is provided inside the reticle stage 4, and a refrigerant 8 such as air or water is circulated and circulated in the cooling pipe 7 by a circulator 9. There is. In addition, the heat exchanger 1 is provided in the cooling pipe 7.
0 is provided and the cooling pipe 11 leading to this heat exchanger 10
A refrigerant 12 such as chlorofluorocarbon is circulated by a circulator 13.

【0017】さらに、レチクルステージ4の角部には、
レチクル3と接触するように温度センサ14が取付けら
れており、レチクル3の温度をモニタしている。この温
度センサ14の検出信号は制御部15に入力され、その
検出値に基づいて制御部15は循環器9及び13を制御
する。
Further, at the corner of the reticle stage 4,
A temperature sensor 14 is attached so as to come into contact with the reticle 3, and the temperature of the reticle 3 is monitored. The detection signal of the temperature sensor 14 is input to the controller 15, and the controller 15 controls the circulators 9 and 13 based on the detected value.

【0018】上記のように構成された本実施例によれ
ば、レチクルステージ4内の冷却配管7を流れる冷媒8
によってレチクル3が冷却され、レチクル3の温度上昇
が抑えられる。これにより、レチクル3の膨張が防止さ
れる。
According to the present embodiment configured as described above, the refrigerant 8 flowing through the cooling pipe 7 in the reticle stage 4
As a result, the reticle 3 is cooled, and the temperature rise of the reticle 3 is suppressed. This prevents the reticle 3 from expanding.

【0019】この際、本実施例においては、温度センサ
14にて測定されたレチクル3の温度をフィードバック
して、冷媒8及び冷媒12の流量または温度或いはこれ
ら両方を制御する。例えば、レチクル3の温度が上昇す
ると、温度センサ14によって測定された温度パラメー
タに従って、熱交換器10を流れる冷媒12の流量、冷
却配管7を流れる冷媒8の流量を多くして、レチクルス
テージ4を冷却し、これによってレチクル3が冷却さ
れ、レチクル3の温度が一定に保たれる。
At this time, in this embodiment, the temperature of the reticle 3 measured by the temperature sensor 14 is fed back to control the flow rates or temperatures of the refrigerant 8 and the refrigerant 12 or both of them. For example, when the temperature of the reticle 3 rises, the flow rate of the refrigerant 12 flowing through the heat exchanger 10 and the flow rate of the refrigerant 8 flowing through the cooling pipe 7 are increased in accordance with the temperature parameter measured by the temperature sensor 14, and the reticle stage 4 is moved. By cooling, the reticle 3 is cooled by this, and the temperature of the reticle 3 is kept constant.

【0020】[0020]

【発明の効果】以上説明したように、本発明によれば、
レチクルの温度上昇を抑えることが可能になり、レチク
ルの温度上昇によるレチクルの膨張を防ぐことができる
ので、各レイヤーの総合重ね合わせ精度の低下を防ぐこ
とが可能になる。
As described above, according to the present invention,
Since it is possible to suppress the temperature increase of the reticle and prevent the reticle from expanding due to the temperature increase of the reticle, it is possible to prevent the deterioration of the overall overlay accuracy of each layer.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例における縮小投影露光装置のレ
チクルステージの要部を示す図2のa−a線拡大断面図
である。
FIG. 1 is an enlarged cross-sectional view taken along line aa of FIG. 2 showing a main part of a reticle stage of a reduction projection exposure apparatus according to an exemplary embodiment of the present invention.

【図2】本発明の実施例における縮小投影露光装置の概
略構成図である。
FIG. 2 is a schematic configuration diagram of a reduction projection exposure apparatus according to an embodiment of the present invention.

【図3】従来の縮小投影露光装置における冷却機能付き
ペリクルの断面図である。
FIG. 3 is a sectional view of a pellicle with a cooling function in a conventional reduction projection exposure apparatus.

【符号の説明】[Explanation of symbols]

1 露光光源 2 露光光 3 レチクル 4 レチクルステージ 5 縮小投影レンズ 6 ウェーハ 7 冷却配管 8 冷媒 9 循環器 10 熱交換器 11 冷却配管 12 冷媒 13 循環器 14 温度センサ 15 制御部 1 Exposure Light Source 2 Exposure Light 3 Reticle 4 Reticle Stage 5 Reduction Projection Lens 6 Wafer 7 Cooling Pipe 8 Refrigerant 9 Circulator 10 Heat Exchanger 11 Cooling Pipe 12 Refrigerant 13 Circulator 14 Temperature Sensor 15 Controller

フロントページの続き (72)発明者 江口 公平 相模原市淵野辺5−10−1 新日本製鐵株 式会社エレクトロニクス研究所内Continued Front Page (72) Inventor Kohei Eguchi 5-10-1, Fuchinobe, Sagamihara-shi Nippon Steel Co., Ltd. Inside Electronics Research Laboratory

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 レチクルを保持するレチクルステージの
内部に配管を設け、この配管に冷媒を流す冷却手段を設
けたことを特徴とする縮小投影露光装置。
1. A reduction projection exposure apparatus characterized in that a pipe is provided inside a reticle stage for holding a reticle, and a cooling means for flowing a refrigerant is provided in the pipe.
【請求項2】 請求項1記載の縮小投影露光装置におい
て、前記レチクルに接触するように設置された温度セン
サと、この温度センサの検出値に基づいて前記レチクル
ステージ内配管を流れる冷媒の温度または量を制御する
制御手段とを設けたことを特徴とする縮小投影露光装
置。
2. The reduction projection exposure apparatus according to claim 1, wherein a temperature sensor installed so as to come into contact with the reticle, and a temperature of a refrigerant flowing through the pipe in the reticle stage based on a detection value of the temperature sensor or A reduction projection exposure apparatus, which is provided with control means for controlling the amount.
JP5075287A 1993-03-09 1993-03-09 Stepper Withdrawn JPH06260387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5075287A JPH06260387A (en) 1993-03-09 1993-03-09 Stepper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5075287A JPH06260387A (en) 1993-03-09 1993-03-09 Stepper

Publications (1)

Publication Number Publication Date
JPH06260387A true JPH06260387A (en) 1994-09-16

Family

ID=13571872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5075287A Withdrawn JPH06260387A (en) 1993-03-09 1993-03-09 Stepper

Country Status (1)

Country Link
JP (1) JPH06260387A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7812929B2 (en) 2005-09-26 2010-10-12 Samsung Electronics Co., Ltd. Electrostatic chuck with temperature sensing unit, exposure equipment having the same, and method of detecting temperature from photomask
US20200103767A1 (en) * 2016-03-24 2020-04-02 Asml Netherlands B.V. Patterning device cooling system and method of thermally conditioning a patterning device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7812929B2 (en) 2005-09-26 2010-10-12 Samsung Electronics Co., Ltd. Electrostatic chuck with temperature sensing unit, exposure equipment having the same, and method of detecting temperature from photomask
US20200103767A1 (en) * 2016-03-24 2020-04-02 Asml Netherlands B.V. Patterning device cooling system and method of thermally conditioning a patterning device
US11036148B2 (en) * 2016-03-24 2021-06-15 Asml Netherlands B.V. Patterning device cooling system and method of thermally conditioning a patterning device

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