JPH06169173A - Method for manufacturing aluminum nitride substrate - Google Patents
Method for manufacturing aluminum nitride substrateInfo
- Publication number
- JPH06169173A JPH06169173A JP31968892A JP31968892A JPH06169173A JP H06169173 A JPH06169173 A JP H06169173A JP 31968892 A JP31968892 A JP 31968892A JP 31968892 A JP31968892 A JP 31968892A JP H06169173 A JPH06169173 A JP H06169173A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- aluminum nitride
- conductor
- conductors
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、窒化アルミニウム質焼
結体を絶縁基板とし、内部にスルーホールが形成された
基板の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a substrate having an aluminum nitride sintered body as an insulating substrate and having through holes formed therein.
【０００２】[0002]
【従来技術】半導体素子などを搭載する多層配線基板
は、回路の高集積化に伴い、その素子からの発熱をいか
に放出するかが大きな問題となっている。そこで、最近
では、これまで一般的に使用されていたＡｌ2 Ｏ3 質基
板から高熱伝導性を有する窒化アルミニウム質基板を用
いることが提案され、実用化が進められている。2. Description of the Related Art In a multilayer wiring board on which a semiconductor element or the like is mounted, how to dissipate heat generated from the element has become a serious problem as the circuit becomes highly integrated. Therefore, recently, it has been proposed to use an aluminum nitride-based substrate having high thermal conductivity from the Al 2 O 3 -based substrate that has been generally used so far, and its practical use is being promoted.
【０００３】一般に、多層配線基板は、図１に示すよう
に絶縁層１間に内部導体２が配設され、各層の導体２は
スルーホール３を通じて、基板の表面に導出される。さ
らに、表面導体４を含む基板表面には、例えば、蒸着法
などの薄膜法により基板の表面に配線層６が形成され
る。Generally, in a multilayer wiring board, internal conductors 2 are arranged between insulating layers 1 as shown in FIG. 1, and the conductors 2 of each layer are led out to the surface of the board through through holes 3. Further, on the surface of the substrate including the surface conductor 4, the wiring layer 6 is formed on the surface of the substrate by a thin film method such as a vapor deposition method.
【０００４】一方、窒化アルミニウム質基板は、窒化ア
ルミニウム自体が酸、アルカリなどに対する耐薬品性が
弱いために、配線パターンを形成する過程でエッチング
液中に浸漬した時に基板表面が腐食し、変色、荒れなど
を生じるという問題があったため、従来から窒化アルミ
ニウム基板表面に導体パターンを形成する前に、基板を
大気中にて熱処理してＡｌ2 Ｏ3 からなる酸化層を形成
することにより耐薬品性を高めることが行われている。On the other hand, since aluminum nitride itself has a weak chemical resistance to acids, alkalis, etc., the aluminum nitride-based substrate corrodes the surface of the substrate when it is immersed in an etching solution in the process of forming a wiring pattern, causing discoloration, Since there has been a problem that the surface is roughened, the substrate is heat-treated in the air before forming a conductive pattern on the surface of the aluminum nitride substrate to form an oxide layer of Al 2 O 3 so that chemical resistance can be improved. Is being carried out.
【０００５】[0005]
【発明が解決しようとする問題点】しかしながら、窒化
アルミニウム基板として内部に導体が配設され、その導
体がスルーホールを通じて表面に導出された基板に対し
て、大気中で酸化処理を行うと、基板表面に導出された
導体の表面にまで酸化膜が形成されてしまうために、さ
らにその導体の表面に導体を接続して配線パターンを形
成する際、両導体間の抵抗が増大するという問題があっ
た。However, when an aluminum nitride substrate is internally provided with a conductor and the conductor is led to the surface through a through hole and the substrate is subjected to an oxidation treatment in the atmosphere, the substrate is Since an oxide film is formed even on the surface of the conductor led out to the surface, when connecting the conductor to the surface of the conductor and forming a wiring pattern, there is a problem that the resistance between both conductors increases. It was
【０００６】また、従来の方法によって酸化膜が形成さ
れた基板表面に配線パターンを形成した場合、配線パタ
ーンと基板との接着強度が低下するといった問題が生じ
ることがわかった。Further, it has been found that when a wiring pattern is formed on the surface of a substrate on which an oxide film is formed by a conventional method, there arises a problem that the adhesive strength between the wiring pattern and the substrate decreases.
【０００７】[0007]
【問題点を解決するための手段】本発明者は、窒化アル
ミニウム基板の耐薬品性を付与しつつ、基板表面に導出
された表面導体４と基板表面の配線層６の両導体間の抵
抗の増大を低減させるための方法について検討を行った
ところ、導体が表面に導出された窒化アルミニウム基板
にＡｌ2 Ｏ3 膜を形成するための熱処理を酸素濃度が５
０乃至１５００ｐｐｍの窒素雰囲気中で１１００℃以上
の温度で行うことにより抵抗の増大なく、酸化膜を形成
することができ、しかも基板表面に形成される配線パタ
ーンの基板との密着性も向上することを知見したもので
ある。SUMMARY OF THE INVENTION The inventor of the present invention provides the chemical resistance of an aluminum nitride substrate, and at the same time, improves the resistance between the surface conductor 4 led to the substrate surface and the conductors of the wiring layer 6 on the substrate surface. As a result of studying a method for reducing the increase, a heat treatment for forming an Al 2 O 3 film on an aluminum nitride substrate having a conductor led to the surface was performed with an oxygen concentration of 5
By performing the treatment in a nitrogen atmosphere of 0 to 1500 ppm at a temperature of 1100 ° C. or higher, it is possible to form an oxide film without increasing the resistance and improve the adhesion of the wiring pattern formed on the substrate surface to the substrate. Was discovered.
【０００８】[0008]
【作用】本発明によれば、酸化処理を５０乃至１５００
ｐｐｍの低酸素濃度の窒素雰囲気中で行うことにより、
基板の表面に導出された導体表面の酸化が進行しにくく
なり、この表面に導出された導体と基板表面に形成され
る導体と接続する時に酸化膜が存在しないか、酸化膜が
存在してもその厚みが非常に小さいために導体間の電気
抵抗を増大することがなく、良好な電気的導通を図るこ
とができる。According to the present invention, the oxidation treatment is performed at 50 to 1500.
By performing in a nitrogen atmosphere with a low oxygen concentration of ppm,
Oxidation of the conductor surface led to the surface of the substrate becomes difficult to proceed, and there is no oxide film when connecting the conductor led to this surface and the conductor formed on the substrate surface, or even if there is an oxide film. Since the thickness is extremely small, good electrical conduction can be achieved without increasing the electric resistance between the conductors.
【０００９】また、酸化膜が形成された基板表面に配線
パターンを形成しても配線パターンが剥がれることな
く、良好な接着強度が得られる。Further, even if a wiring pattern is formed on the surface of the substrate on which the oxide film is formed, the wiring pattern is not peeled off and good adhesive strength can be obtained.
【００１０】[0010]
【実施例】以下、本発明を詳述する。本発明における窒
化アルミニウム基板は、例えば図１に示すような多層構
造から形成される。図１によれば、窒化アルミニウム質
焼結体から構成される絶縁層１の層間に内部導体２が形
成される。また、各層の内部導体２は、導体が充填され
たスルーホール導体３により接続され、基板表面に表面
導体４として導出される。The present invention will be described in detail below. The aluminum nitride substrate in the present invention is formed of, for example, a multilayer structure as shown in FIG. According to FIG. 1, the internal conductor 2 is formed between the layers of the insulating layer 1 composed of the aluminum nitride sintered body. Further, the internal conductors 2 of the respective layers are connected by the through-hole conductors 3 filled with the conductors and led out as the surface conductors 4 on the surface of the substrate.
【００１１】このような多層基板は、窒化アルミニウム
と周期律表第３ａ族または第２ａ族酸化物などの焼結助
剤を添加した粉末を成形してなるグリーンシートの表面
にＷやＭｏなどの高融点金属粉末を含有する導体ペース
トを所定のパターンで塗布し積層し、さらにスルーホー
ルを形成してその中に導体ペーストを充填し、これを１
５００〜１９００℃の非酸化性雰囲気中で窒化アルミニ
ウム質成形体と導体ペーストを同時に焼成することによ
り得ることができる。In such a multi-layer substrate, a green sheet formed by molding a powder containing aluminum nitride and a sintering aid such as an oxide of Group 3a or Group 2a of the Periodic Table is formed of W, Mo or the like. A conductor paste containing a high melting point metal powder is applied in a predetermined pattern and laminated, a through hole is further formed, and the conductor paste is filled in the through hole.
It can be obtained by simultaneously firing the aluminum nitride compact and the conductor paste in a non-oxidizing atmosphere at 500 to 1900 ° C.
【００１２】この時、基板の導体が形成されていない部
分は窒化アルミニウムが露出した状態となっている。窒
化アルミニウムはそれ自体、水との反応性が高く、また
アルカリ溶液に対する耐久性に劣る。そこで、露出して
いる窒化アルミニウム表面にＡｌ2 Ｏ3 からなる酸化膜
５を形成する。本発明によれば、この時の酸化膜５の形
成を酸素濃度５０〜１５００ｐｐｍの範囲の低酸素濃度
の不活性雰囲気中で行うことが重要である。即ち、この
時の酸素濃度が５０ｐｐｍより低いと、充分な窒化アル
ミニウムが露出した基板表面に所定の酸化膜の形成を行
うことができず、酸素濃度が１５００ｐｐｍより高い
と、基板表面に形成された表面導体４の表面までＷＯ3
などの酸化膜が形成され、この後に表面導体４上に形成
される配線層との界面に抵抗層が形成され、両導体間の
電気抵抗が増大してしまう。さらに、大気などの高酸素
雰囲気で行うと窒化アルミニウム基板表面の酸化膜の厚
みが大きくなり、酸化膜上に配線パターンを形成した
時、熱膨張差などに起因して配線層の接着強度が低下す
るなどの問題が生じる。At this time, aluminum nitride is exposed at the portion of the substrate where the conductor is not formed. Aluminum nitride itself has high reactivity with water and is poor in durability against an alkaline solution. Therefore, the oxide film 5 made of Al 2 O 3 is formed on the exposed surface of aluminum nitride. According to the present invention, it is important that the oxide film 5 at this time is formed in an inert atmosphere having a low oxygen concentration in the range of 50 to 1500 ppm. That is, if the oxygen concentration at this time is lower than 50 ppm, a predetermined oxide film cannot be formed on the substrate surface where sufficient aluminum nitride is exposed, and if the oxygen concentration is higher than 1500 ppm, it is formed on the substrate surface. WO 3 up to the surface of surface conductor 4
An oxide film such as is formed, and thereafter a resistance layer is formed at the interface with the wiring layer formed on the surface conductor 4, and the electrical resistance between both conductors increases. Furthermore, when the process is performed in a high oxygen atmosphere such as the air, the thickness of the oxide film on the surface of the aluminum nitride substrate becomes large, and when a wiring pattern is formed on the oxide film, the adhesive strength of the wiring layer decreases due to the difference in thermal expansion. It causes problems such as
【００１３】また、酸化膜の形成にあたってはその処理
温度は、窒化アルミニウムが酸素と結合して酸化するに
充分な温度であればよく、具体的には１１００℃以上、
特に１２００〜１４００℃が望ましい。この時の温度が
１１００℃より低いと酸化膜が形成されないか、形成さ
れるにしても非常に長時間を要るためである。Further, in forming the oxide film, the treatment temperature may be a temperature sufficient for aluminum nitride to combine with oxygen and oxidize, and specifically, 1100 ° C. or higher,
Particularly, 1200 to 1400 ° C is desirable. This is because if the temperature at this time is lower than 1100 ° C., the oxide film is not formed or if it is formed, it takes a very long time.
【００１４】なお、上記のようにして窒化アルミニウム
絶縁層表面に形成される酸化膜の厚みは０．５〜７μｍ
程度であることが望ましく、その厚みが０．５μｍより
薄いと露出した水やアルカリに対する耐久性が充分でな
く、７μｍより厚いと窒化アルミニウム基板との熱膨張
差などに起因し酸化膜が剥がれるなどの問題が生じるた
めである。The thickness of the oxide film formed on the surface of the aluminum nitride insulating layer as described above is 0.5 to 7 μm.
If the thickness is less than 0.5 μm, the durability against exposed water or alkali is insufficient, and if the thickness is more than 7 μm, the oxide film peels off due to the difference in thermal expansion from the aluminum nitride substrate, etc. This is because the problem of occurs.
【００１５】次に、このようにして得られた多層基板の
表面には、配線の多層化を行うために、表面導体４を含
む基板の表面に、例えば蒸着法などの薄膜法や、導体ペ
ーストを塗布し焼き付ける方法により配線層６が形成さ
れ、さらに場合により配線層６の表面にはメッキ層（図
示せず）が形成されることもある。Next, on the surface of the thus obtained multilayer substrate, in order to make the wiring multi-layered, for example, a thin film method such as a vapor deposition method or a conductor paste is formed on the surface of the substrate including the surface conductor 4. The wiring layer 6 is formed by a method of applying and baking, and a plating layer (not shown) may be formed on the surface of the wiring layer 6 depending on the case.
【００１６】本発明を以下の実施例にさらに説明する。 実施例 窒化アルミニウム粉末（平均粒径１．６μｍ、酸素量
０．９重量％）に焼結助剤としてＹ2 Ｏ3 を８重量％添
加した混合物に有機バインダーを添加して有機溶媒中で
混合してスラリーを調製した。このスラリーをドクター
ブレード法によって厚さ３００μｍのグリーンシートを
作成した。The invention is further described in the following examples. Example An organic binder was added to a mixture prepared by adding 8% by weight of Y 2 O 3 as a sintering aid to aluminum nitride powder (average particle size: 1.6 μm, oxygen amount: 0.9% by weight) and mixed in an organic solvent. To prepare a slurry. This slurry was used to form a green sheet having a thickness of 300 μm by the doctor blade method.
【００１７】このグリーンシートの表面にＷ粉末に窒化
アルミニウム粉末を５重量％添加した固形分を含む導体
ペーストをスクリーン印刷法により導体パターンを形成
した。また、グリーンシートには所望の位置にスルーホ
ールを形成した。このようして作成した複数のグリーン
シートを積層圧着した後、スルーホール中に前記導体ペ
ーストを充填し、１８００℃の窒素雰囲気中で３時間焼
成した。次に、この基板を酸素濃度および処理温度が表
１の窒素雰囲気中で熱処理し、酸化処理を行った。その
後、基板上の導体の表面に真空蒸着法によってＴｉから
なる厚み１．０μｍの薄膜導体を形成した。A conductor pattern was formed on the surface of this green sheet by a screen printing method using a conductor paste containing a solid content in which 5% by weight of aluminum powder was added to W powder. Further, through holes were formed at desired positions on the green sheet. After the plurality of green sheets thus prepared were laminated and pressure-bonded, the conductor paste was filled in the through holes and baked in a nitrogen atmosphere at 1800 ° C. for 3 hours. Next, this substrate was heat-treated in a nitrogen atmosphere whose oxygen concentration and treatment temperature are shown in Table 1 to oxidize it. Then, a thin film conductor made of Ti and having a thickness of 1.0 μm was formed on the surface of the conductor on the substrate by a vacuum deposition method.
【００１８】得られた多層基板に対して、薄膜導体とス
ルーホール導体間の電気抵抗を測定し、さらに基板の耐
薬品性を評価するために、得られた基板をアルカリ液中
に１時間浸漬して試験後の基板表面の変化を観察した。
さらに、薄膜導体の基板との密着性についてその接着強
度を測定した。For the obtained multilayer substrate, the electrical resistance between the thin film conductor and the through-hole conductor was measured, and in order to evaluate the chemical resistance of the substrate, the obtained substrate was immersed in an alkaline solution for 1 hour. Then, the change of the substrate surface after the test was observed.
Further, the adhesion strength of the thin film conductor to the substrate was measured.
【００１９】[0019]
【表１】 [Table 1]
【００２０】表１によれば、酸素濃度が５０ｐｐｍより
低い試料Ｎo,１では酸化膜の形成が不十分であり、電気
抵抗は小さいものの耐薬品性が小さい。また酸素濃度が
１５００ｐｐｍより大きい試料Ｎo,６では、耐薬品性で
は問題がないが、導体間の電気抵抗が大きくなった。こ
れに対して、本発明の酸素濃度で処理した試料は、いず
れも優れた耐薬品性を有し、また導体間の電気抵抗もな
んら支障のないものであった。According to Table 1, in the sample No. 1 having an oxygen concentration of less than 50 ppm, the oxide film is insufficiently formed, and although the electric resistance is small, the chemical resistance is small. Further, in sample No. 6 having an oxygen concentration of more than 1500 ppm, there was no problem in chemical resistance, but the electrical resistance between the conductors increased. On the other hand, all the samples treated with the oxygen concentration of the present invention had excellent chemical resistance, and the electrical resistance between the conductors did not hinder at all.
【００２１】また、薄膜の密着強度は、基板の酸化処理
が不十分な試料Ｎo.１及びＮo.８の場合および酸素濃度
が高い試料Ｎo.７及びＮo.９の場合でも低下しており、
所定の低酸素濃度雰囲気での処理により最も強度が大き
くなることがわかる。Further, the adhesion strength of the thin film is lowered in the case of Samples No. 1 and No. 8 in which the oxidation treatment of the substrate is insufficient and in the cases of Samples No. 7 and No. 9 in which the oxygen concentration is high,
It can be seen that the strength is maximized by the treatment in the predetermined low oxygen concentration atmosphere.
【００２２】[0022]
【発明の効果】以上詳述した通り、本発明によれば、ス
ルーホールによりその表面に導体が導出された多層配線
基板において、多層化に伴う導体間の電気的接続に何ら
支障を及ぼすことなく、基板の耐薬品性を高めることが
できる。これにより基板としての信頼性を高めることが
できる。As described in detail above, according to the present invention, in a multilayer wiring board in which conductors are led out to the surface by through holes, there is no problem in electrical connection between the conductors due to the multilayer structure. The chemical resistance of the substrate can be increased. As a result, the reliability of the substrate can be improved.
【図１】本発明における窒化アルミニウム基板の概略図
である。FIG. 1 is a schematic view of an aluminum nitride substrate according to the present invention.
１ 絶縁層 ２ 内部導体 ３ スルーホール ４ 表面導体 ５ 酸化膜 ６ 配線層 1 Insulating Layer 2 Inner Conductor 3 Through Hole 4 Surface Conductor 5 Oxide Film 6 Wiring Layer
Claims (1)
に内部導体層が形成され、且つ該内部導体層がスルーホ
ールを通じて表面に導出されてなる基板を、酸素濃度が
５０乃至１５００ｐｐｍの窒素雰囲気中で１１００℃以
上の温度で熱処理して、該基板の表面にＡｌ2 Ｏ3 から
なる酸化膜を形成した後、該基板表面に配線層を形成し
たことを特徴とする窒化アルミニウム質基板の製造方
法。1. A substrate in which an internal conductor layer is formed between insulating layers containing aluminum nitride as a main component, and the internal conductor layer is led out to the surface through a through hole, in a nitrogen atmosphere having an oxygen concentration of 50 to 1500 ppm. And a wiring layer is formed on the surface of the substrate after forming an oxide film of Al 2 O 3 on the surface of the substrate by heat treatment at a temperature of 1100 ° C. or higher. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31968892A JP2989975B2 (en) | 1992-11-30 | 1992-11-30 | Method for manufacturing aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31968892A JP2989975B2 (en) | 1992-11-30 | 1992-11-30 | Method for manufacturing aluminum nitride substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06169173A true JPH06169173A (en) | 1994-06-14 |
| JP2989975B2 JP2989975B2 (en) | 1999-12-13 |
Family
ID=18113078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31968892A Expired - Lifetime JP2989975B2 (en) | 1992-11-30 | 1992-11-30 | Method for manufacturing aluminum nitride substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2989975B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002045470A1 (en) * | 2000-11-30 | 2002-06-06 | Tokuyama Corporation | Substrate and production method therefor |
| US8834630B2 (en) | 2007-01-17 | 2014-09-16 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US9437430B2 (en) | 2007-01-26 | 2016-09-06 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US9525032B2 (en) | 2005-12-02 | 2016-12-20 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US10446391B2 (en) | 2007-01-26 | 2019-10-15 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
-
1992
- 1992-11-30 JP JP31968892A patent/JP2989975B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002045470A1 (en) * | 2000-11-30 | 2002-06-06 | Tokuyama Corporation | Substrate and production method therefor |
| US6762496B2 (en) | 2000-11-30 | 2004-07-13 | Tokuyama Corporation | Substrate and production method therefor |
| US9525032B2 (en) | 2005-12-02 | 2016-12-20 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US8834630B2 (en) | 2007-01-17 | 2014-09-16 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9624601B2 (en) | 2007-01-17 | 2017-04-18 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9670591B2 (en) | 2007-01-17 | 2017-06-06 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9437430B2 (en) | 2007-01-26 | 2016-09-06 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US10446391B2 (en) | 2007-01-26 | 2019-10-15 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| US10074784B2 (en) | 2011-07-19 | 2018-09-11 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2989975B2 (en) | 1999-12-13 |
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