JPH06158392A - Plating device - Google Patents
Plating deviceInfo
- Publication number
- JPH06158392A JPH06158392A JP33657392A JP33657392A JPH06158392A JP H06158392 A JPH06158392 A JP H06158392A JP 33657392 A JP33657392 A JP 33657392A JP 33657392 A JP33657392 A JP 33657392A JP H06158392 A JPH06158392 A JP H06158392A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- anode electrode
- plating solution
- tank
- electrode device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Electroplating Methods And Accessories (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、めっき装置に関し、更
に詳しくは、各種電子部品用基板、ＩＣ用ウエハ、薄膜
磁気ヘッド用ウエハ等にめっきを施すのに好適なめっき
装置に係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating apparatus, and more particularly to a plating apparatus suitable for plating various electronic component substrates, IC wafers, thin film magnetic head wafers and the like.
【０００２】[0002]
【従来の技術】各種電子部品用基板、ＩＣ用ウエハ、薄
膜磁気ヘッド用ウエハ等においては、被めっき物である
基板もしくはウエハ上の限られた平面積内でめっきをし
なければならない。そのためのめっき装置として、噴流
めっき装置が知られている。噴流めっき装置において
は、めっき槽内にめっき液が噴流として供給される。め
っき槽内には、カソード電極装置がめっき液の噴流内に
位置するように取り付けられると共に、多数の小孔を有
するアノード電極板がカソード電極装置と対向するよう
に配置されている。アノード電極板としては、全面にわ
たって多数の孔を有するエクスパンデッド．プレートが
用いられている。エクスパンデッド．プレートは、板材
に刻みを格子状に入れた後、引っ張って拡大することに
より、多孔板としたものである。2. Description of the Related Art In various electronic component substrates, IC wafers, thin film magnetic head wafers, etc., plating must be performed within a limited plane area on the substrate or wafer to be plated. A jet plating apparatus is known as a plating apparatus therefor. In the jet plating apparatus, the plating solution is supplied as a jet into the plating tank. In the plating tank, the cathode electrode device is attached so as to be located in the jet of the plating solution, and the anode electrode plate having a large number of small holes is arranged so as to face the cathode electrode device. As an anode electrode plate, an expanded. Plates are used. Expanded. The plate is made into a perforated plate by placing the plate material in the form of a grid and then pulling and enlarging it.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、全面に
わたって多数の孔を有するアノード電極板を用いると、
孔を構成する格子がめっき液の流れに対して大きな流動
障害となって乱流を発生し、均一なめっき膜厚及びめっ
き膜組成を得る妨げとなる。However, when an anode electrode plate having a large number of holes over its entire surface is used,
The grid forming the holes becomes a large flow obstacle to the flow of the plating solution, generating turbulent flow, which hinders obtaining a uniform plating film thickness and plating film composition.
【０００４】特に、アノード電極板としてエキスパンデ
ッド．プレートを用いた場合、孔の周りの格子の内壁面
が、同一方向に傾斜する傾斜面となるため、めっき液が
内壁面の傾斜方向に沿って流れるようになる。このた
め、偏っためっき液の流れのために、めっき膜厚及び膜
組成の均一性が損なわれる。Particularly, as an anode electrode plate, expanded. When a plate is used, the inner wall surface of the grid around the holes is an inclined surface that is inclined in the same direction, so that the plating solution flows along the inclination direction of the inner wall surface. Therefore, the uneven flow of the plating solution impairs the uniformity of the plating film thickness and the film composition.
【０００５】そこで、本発明の課題は、めっき液に対す
る流動障害が少なく、均一なめっき膜厚及びめっき膜組
成が得られる噴流型のめっき装置を提供することであ
る。Therefore, an object of the present invention is to provide a jet-type plating apparatus in which the flow obstacle to the plating solution is small and a uniform plating film thickness and plating film composition can be obtained.
【０００６】[0006]
【課題を解決するための手段】上述した課題解決のた
め、本発明は、めっき槽と、カソード電極装置と、アノ
ード電極装置とを含むめっき装置であって、前記めっき
槽は、めっき液が噴流として供給されるものであり、前
記カソード電極装置は、前記めっき液の噴流内に位置す
るように前記めっき槽に取り付けられており、前記アノ
ード電極装置は、アノード電極板を含み、前記アノード
電極板が中心部付近に中心孔を有すると共に、前記中心
孔の周りに多数の小孔を有し、前記中心孔及び前記小孔
が前記めっき液の流通路を構成し、前記カソード電極装
置と対向するように、前記めっき槽内に配置されてい
る。In order to solve the above-mentioned problems, the present invention is a plating apparatus including a plating tank, a cathode electrode device, and an anode electrode device, wherein the plating solution has a jet flow. The cathode electrode device is attached to the plating tank so as to be positioned in the jet of the plating solution, and the anode electrode device includes an anode electrode plate, and the anode electrode plate. Has a central hole in the vicinity of the central portion, and has a large number of small holes around the central hole, and the central hole and the small holes constitute a flow passage for the plating solution and face the cathode electrode device. Thus, it is arranged in the plating bath.
【０００７】[0007]
【作用】めっき槽はめっき液が噴流として供給されるも
のであり、カソード電極装置はめっき液の噴流内に位置
するようにめっき槽に取り付けられており、アノード電
極板は多数の小孔がめっき液の流通路を構成し、カソー
ド電極装置と対向するように、めっき槽内に配置されて
いるから、各種電子部品用基板、ＩＣ用ウエハ、薄膜磁
気ヘッド用ウエハ等のめっきに有効な噴流型のめっき装
置が得られる。[Function] The plating tank is supplied with a plating solution as a jet stream, the cathode electrode device is attached to the plating tank so as to be located inside the jet stream of the plating solution, and the anode electrode plate is plated with a large number of small holes. It is a jet type that is effective for plating various electronic component substrates, IC wafers, thin film magnetic head wafers, etc. because it forms a liquid flow path and is arranged in the plating tank so as to face the cathode electrode device. The plating device of is obtained.
【０００８】アノード電極装置は、アノード電極板が中
心部付近に中心孔を有するから、最も流動障害が大きく
なる中心部分で流動障害が除去される。このため、均一
なめっき膜厚及びめっき膜組成を得ることが可能にな
る。In the anode electrode device, since the anode electrode plate has the central hole near the central portion, the flow obstacle is removed at the central portion where the flow obstacle is the largest. Therefore, it is possible to obtain a uniform plating film thickness and plating film composition.
【０００９】好ましい実施例では、小孔を形成する格子
は、断面がめっき液の流れ方向に取られた対称軸に関し
て線対称性を有する。このような構成であると、めっき
液の流れに偏りがなくなり、めっき液が実質的にアノー
ド電極板の主面に対して直交する方向に流れるようにな
る。このため、より一層、均一なめっき膜厚及びめっき
膜組成を得ることが可能になる。In a preferred embodiment, the grid forming the small holes has a cross-section that is axisymmetric with respect to the axis of symmetry taken in the direction of flow of the plating solution. With such a configuration, the flow of the plating solution is not biased, and the plating solution substantially flows in the direction orthogonal to the main surface of the anode electrode plate. Therefore, it becomes possible to obtain a more uniform plating film thickness and plating film composition.
【００１０】[0010]
【実施例】図１は本発明に係るめっき装置の概略を示す
図である。図において、１はめっき槽、２はアノード電
極装置、３はカソード電極装置、４は被めっき物であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a plating apparatus according to the present invention. In the figure, 1 is a plating tank, 2 is an anode electrode device, 3 is a cathode electrode device, and 4 is an object to be plated.
【００１１】めっき槽１は、槽本体１０内にめっき液１
１を収納している。１２はめっき液１１の供給路、１３
はめっき液１１の回収路である。めっき液１１は供給路
１２を通り槽内１０に供給され、槽内１０から回収路１
３を通して回収される。めっき液１１の浴組成は得よう
とするめっき膜に応じて選択される。The plating tank 1 has a plating solution 1 in the tank body 10.
Holds 1. 12 is a supply path for the plating solution 11, 13
Is a recovery path for the plating solution 11. The plating solution 11 is supplied to the inside 10 of the tank through the supply passage 12, and from the inside 10 of the tank to the recovery passage 1
Recovered through 3. The bath composition of the plating solution 11 is selected according to the plating film to be obtained.
【００１２】めっき槽１にはめっき液１１が噴流として
供給される。そのための具体的構成として、アノード電
極装置２はめっき槽１の下側に配置され、カソード電極
装置３３は上側に配置されている。アノード電極装置２
はめっき液供給路１２を有しており、めっき液１１はめ
っき液供給路１２を通して噴流となる。カソード電極装
置３は、カソード電極３１及び被めっき物４がめっき液
１１の噴流内に位置するように取り付けられている。A plating solution 11 is supplied to the plating tank 1 as a jet stream. As a specific configuration therefor, the anode electrode device 2 is arranged on the lower side of the plating tank 1, and the cathode electrode device 33 is arranged on the upper side. Anode electrode device 2
Has a plating solution supply path 12, and the plating solution 11 becomes a jet flow through the plating solution supply path 12. The cathode electrode device 3 is attached so that the cathode electrode 31 and the object to be plated 4 are located in the jet of the plating solution 11.
【００１３】アノード電極装置２はアノード電極板２１
を含む。参照符号２２は電極支持装置である。アノード
電極板２１はめっき液供給路１２を横断するように配置
される。図２はアノード電極板２１の平面図であり、中
心部付近に比較的大きな中心孔２３を有するとともに、
その回りに多数の小孔２４を有する。The anode electrode device 2 has an anode electrode plate 21.
including. Reference numeral 22 is an electrode supporting device. The anode electrode plate 21 is arranged so as to cross the plating solution supply passage 12. FIG. 2 is a plan view of the anode electrode plate 21, which has a relatively large center hole 23 near the center and
It has a large number of small holes 24 around it.
【００１４】めっき槽１はめっき液１１が噴流として供
給されるものであり、カソード電極装置３はめっき液１
１の噴流内に位置するようにめっき槽１に取り付けられ
ており、アノード電極板２１は多数の小孔がめっき液の
流通路を構成し、カソード電極装置３と対向するよう
に、めっき槽１内に配置されているから、各種電子部品
用基板、ＩＣ用ウエハ、薄膜磁気ヘッド用ウエハ等のめ
っきに有効な噴流型のめっき装置が得られる。The plating bath 1 is supplied with the plating solution 11 as a jet stream, and the cathode electrode device 3 is provided with the plating solution 1.
1 is attached to the plating tank 1 so that the anode electrode plate 21 has a large number of small holes forming a flow passage for the plating solution, and the anode electrode plate 21 faces the cathode electrode device 3 so as to face the cathode electrode device 3. Since it is disposed inside, a jet type plating apparatus effective for plating various electronic component substrates, IC wafers, thin film magnetic head wafers and the like can be obtained.
【００１５】アノード電極装置２は、アノード電極板２
１が中心部付近に中心孔２３を有するから、最も流動障
害が大きくなる中心部分で流動障害が除去される。この
ため、均一なめっき膜厚及びめっき膜組成を得ることが
可能になる。The anode electrode device 2 comprises an anode electrode plate 2
Since 1 has the central hole 23 near the central portion, the flow obstacle is removed at the central portion where the flow obstacle is greatest. Therefore, it is possible to obtain a uniform plating film thickness and plating film composition.
【００１６】小孔２４を形成する格子２５は、断面がめ
っき液の流れ方向ａに取られた対称軸に関して線対称性
を有する。その具体例を図３〜図５に示す。図３は断面
が円形状である実施例を示し、図４は断面が矩形状であ
る実施例を示し、図５は断面が３角形状である実施例を
示している。この他にも種々の断面形状が考えられる。
このような構成であると、めっき液の流れに偏りがなく
なり、実質的にアノード電極板２１の主面に対して直交
する方向に流れるようになる。このため、より一層、均
一なめっき膜厚及びめっき膜組成を得ることが可能にな
る。The lattice 25 forming the small holes 24 has a cross-section having line symmetry with respect to the axis of symmetry taken in the flow direction a of the plating solution. Specific examples thereof are shown in FIGS. 3 shows an embodiment having a circular cross section, FIG. 4 shows an embodiment having a rectangular cross section, and FIG. 5 shows an embodiment having a triangular cross section. Other than this, various sectional shapes are possible.
With such a configuration, the flow of the plating solution is not biased, and the plating solution flows substantially in the direction orthogonal to the main surface of the anode electrode plate 21. Therefore, it becomes possible to obtain a more uniform plating film thickness and plating film composition.
【００１７】電極支持装置２２は全体として筒状であっ
て、めっき槽１の底部に一体的に取りつけられており、
その軸方向の中間部において、アノード電極板２１を電
気絶縁して支持している。アノード電極板２１はリード
配線２５によって端子２６に導かれている。２７はリー
ド配線２４をめっき液１１から保護する配管である。The electrode supporting device 22 has a tubular shape as a whole and is integrally attached to the bottom of the plating tank 1.
At the intermediate portion in the axial direction, the anode electrode plate 21 is electrically insulated and supported. The anode electrode plate 21 is led to a terminal 26 by a lead wire 25. Reference numeral 27 is a pipe for protecting the lead wiring 24 from the plating solution 11.
【００１８】カソード電極装置３は、めっき槽１の槽内
１０においてアノード電極装置２と対向するようにめっ
き槽１に取り付けられている。カソード電極装置３は、
リング状カソード電極３１と、押え部材３２と、ケース
部材３３とを含んでいる。カソード電極３１は被めっき
物４の外周縁を受け、押え部材３２は被めっき物４をカ
ソード電極３１に押付けている。ケース部材３３はカソ
ード電極３１及び被めっき物４の後方に、閉じられた空
間３４を形成している。また、ケース部材３３は空間３
４に連なる気体導入路３５及び気体排出路３７を有す
る。気体導入路３５を通して導入される気体は、空気や
窒素などである。３６はカソード電極３１に導通する端
子である。The cathode electrode device 3 is attached to the plating tank 1 so as to face the anode electrode device 2 inside the plating tank 1. The cathode electrode device 3 is
It includes a ring-shaped cathode electrode 31, a pressing member 32, and a case member 33. The cathode electrode 31 receives the outer peripheral edge of the object to be plated 4, and the holding member 32 presses the object to be plated 4 onto the cathode electrode 31. The case member 33 forms a closed space 34 behind the cathode electrode 31 and the object to be plated 4. In addition, the case member 33 has a space 3
4 has a gas introduction passage 35 and a gas discharge passage 37. The gas introduced through the gas introduction passage 35 is air or nitrogen. 36 is a terminal which is electrically connected to the cathode electrode 31.
【００１９】被めっき物４は、各種電子部品用基板、Ｉ
Ｃ用ウエハ、薄膜磁気ヘッド用ウエハ等であり、めっき
液１１と接する下面４１がめっき付着面となっており、
空間３４側に位置する背面４２はめっきを必要としない
面となっている。背面４２に押え部材３２からの押し付
け力が加わり、その押し付け力により、めっき付着面と
なる下面４１の外周縁がカソード電極３１に接触し導通
する。従って、押え部材３２の押付け力によって被めっ
き物４をカソード電極３１に接触させることができ、各
種電子部品用基板、ＩＣ用ウエハ、薄膜磁気ヘッド用ウ
エハ等にめっきを施すのに好適なめっき装置が得られ
る。The object to be plated 4 is a substrate for various electronic parts, I
A wafer for C, a wafer for a thin film magnetic head, etc., the lower surface 41 in contact with the plating solution 11 is a plating adhesion surface,
The back surface 42 located on the space 34 side is a surface that does not require plating. A pressing force from the pressing member 32 is applied to the back surface 42, and the pressing force brings the outer peripheral edge of the lower surface 41, which is the plating adhering surface, into contact with the cathode electrode 31 for electrical conduction. Therefore, the object to be plated 4 can be brought into contact with the cathode electrode 31 by the pressing force of the pressing member 32, and a plating apparatus suitable for plating various electronic component substrates, IC wafers, thin film magnetic head wafers, and the like. Is obtained.
【００２０】ケース部材３３は、カソード電極３１及び
被めっき物４の後方に閉じられた空間３４を形成すると
共に、空間３４に連なる気体導入路３５を有している。
従って、気体導入路３５を通して空間３４内に導入され
た気体の圧力により、空間３４内へのめっき液１１の漏
れを阻止できる。このため、被めっき物４の下面４１と
カソード電極３１との接触界面からの液漏れがなくな
り、被めっき物４の背面４２側にめっきが付着すること
がない。空間３４内の圧力は気体排出路３６の直径また
は弁３７の調整によって適正な値に調整できる。The case member 33 forms a closed space 34 behind the cathode electrode 31 and the object to be plated 4, and also has a gas introduction passage 35 continuous with the space 34.
Therefore, the pressure of the gas introduced into the space 34 through the gas introduction path 35 can prevent the plating solution 11 from leaking into the space 34. Therefore, liquid leakage from the contact interface between the lower surface 41 of the object to be plated 4 and the cathode electrode 31 is eliminated, and the plating does not adhere to the rear surface 42 side of the object to be plated 4. The pressure in the space 34 can be adjusted to an appropriate value by adjusting the diameter of the gas discharge passage 36 or the valve 37.
【００２１】図示の押え部材３２は棒状であって、ケー
ス部材３３にねじ止めなどの手段によって取りつけら
れ、先端が空間３４を通して被めっき物４の背面４２に
接触し、被めっき物４をカソード電極３１に押付けてい
る。The holding member 32 shown in the figure is rod-shaped and is attached to the case member 33 by means of screwing or the like. It is pressed against 31.
【００２２】[0022]
【発明の効果】以上述べたように、本発明に係るめっき
装置によれば、次のような効果が得られる。 （ａ）めっき槽はめっき液が噴流として供給されるもの
であり、カソード電極装置はめっき液の噴流内に位置す
るようにめっき槽に取り付けられており、アノード電極
板は多数の小孔が噴流めっき液の流通路を構成し、カソ
ード電極装置と対向するように、めっき槽内に配置され
ているから、各種電子部品用基板、ＩＣ用ウエハ、薄膜
磁気ヘッド用ウエハ等のめっきに有効な噴流型のめっき
装置が得られる。 （ｂ）アノード電極装置は、アノード電極板が中心部付
近に中心孔を有するから、最も流動障害が大きくなる中
心部分で流動障害が除去される。このため、均一なめっ
き膜厚及びめっき膜組成を得ることが可能になる。 （ｃ）小孔を形成する格子は、断面がめっき液の流れ方
向に取られた対称軸に関して線対称性を有する。このよ
うな構成であると、めっき液の流れに偏りがなくなり、
実質的にアノード電極板の主面に対して直交する方向に
流れるとみなすことができるようになる。このため、よ
り一層、均一なめっき膜厚及びめっき膜組成を得ること
が可能になる。As described above, according to the plating apparatus of the present invention, the following effects can be obtained. (A) The plating tank is supplied with the plating solution as a jet stream, the cathode electrode device is attached to the plating tank so as to be located inside the jet stream of the plating solution, and the anode electrode plate has a large number of small holes. A jet stream effective for plating various electronic component substrates, IC wafers, wafers for thin film magnetic heads, etc., because it constitutes a flow path for the plating solution and is arranged in the plating tank so as to face the cathode electrode device. A mold plating device is obtained. (B) In the anode electrode device, since the anode electrode plate has the central hole near the central portion, the flow obstacle is removed at the central portion where the flow obstacle is greatest. Therefore, it is possible to obtain a uniform plating film thickness and plating film composition. (C) The cross section of the lattice forming the small holes has line symmetry with respect to the axis of symmetry taken in the flow direction of the plating solution. With such a configuration, there is no bias in the flow of the plating solution,
It can be regarded as flowing in a direction substantially orthogonal to the main surface of the anode electrode plate. Therefore, it becomes possible to obtain a more uniform plating film thickness and plating film composition.
【図１】本発明に係るめっき装置の概略図である。FIG. 1 is a schematic view of a plating apparatus according to the present invention.
【図２】本発明に係るめっき装置に用いられるアノード
電極板の平面図である。FIG. 2 is a plan view of an anode electrode plate used in the plating apparatus according to the present invention.
【図３】本発明に係るめっき装置に用いられるアノード
電極板の一部拡大断面図である。FIG. 3 is a partially enlarged sectional view of an anode electrode plate used in the plating apparatus according to the present invention.
【図４】本発明に係るめっき装置に用いられるアノード
電極板の他の実施例を示す一部拡大断面図である。FIG. 4 is a partially enlarged sectional view showing another embodiment of the anode electrode plate used in the plating apparatus according to the present invention.
【図５】本発明に係るめっき装置に用いられるアノード
電極板の他の実施例を示す一部拡大断面図である。FIG. 5 is a partially enlarged cross-sectional view showing another embodiment of the anode electrode plate used in the plating apparatus according to the present invention.
１ めっき槽 ２ アノード電極装置 ２１ アノード電極板 ２３ 中心孔 ２４ 小孔 ２５ 格子 ３ カソード電極装置 ３１ カソード電極 ４ 被めっき物 1 Plating Tank 2 Anode Electrode Device 21 Anode Electrode Plate 23 Center Hole 24 Small Hole 25 Lattice 3 Cathode Electrode Device 31 Cathode Electrode 4 Object to be Plated
Claims (2)
ード電極装置とを含むめっき装置であって、 前記めっき槽は、めっき液が噴流として供給されるもの
であり、 前記カソード電極装置は、前記めっき液の噴流内に位置
するように前記めっき槽に取り付けられており、 前記アノード電極装置は、アノード電極板を含み、前記
アノード電極板が中心部付近に中心孔を有すると共に、
前記中心孔の周りに多数の小孔を有し、前記中心孔及び
前記小孔が前記めっき液の流通路を構成し、前記カソー
ド電極装置と対向するように、前記めっき槽内に配置さ
れているめっき装置。1. A plating apparatus including a plating tank, a cathode electrode device, and an anode electrode device, wherein the plating tank is supplied with a plating solution as a jet flow, and the cathode electrode device is It is attached to the plating tank so as to be located in a jet of a plating solution, the anode electrode device includes an anode electrode plate, and the anode electrode plate has a central hole near the central portion,
A large number of small holes are provided around the central hole, and the central hole and the small holes constitute a flow passage for the plating solution, and are arranged in the plating tank so as to face the cathode electrode device. Plating equipment.
き液の流れ方向に取られた対称軸に関して線対称性を有
する請求項１に記載のめっき装置。2. The plating apparatus according to claim 1, wherein the grid forming the small holes has a cross-section having line symmetry with respect to an axis of symmetry taken in the flow direction of the plating solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33657392A JP3221519B2 (en) | 1992-11-24 | 1992-11-24 | Plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33657392A JP3221519B2 (en) | 1992-11-24 | 1992-11-24 | Plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06158392A true JPH06158392A (en) | 1994-06-07 |
| JP3221519B2 JP3221519B2 (en) | 2001-10-22 |
Family
ID=18300544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33657392A Expired - Fee Related JP3221519B2 (en) | 1992-11-24 | 1992-11-24 | Plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3221519B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6500325B2 (en) * | 1997-04-28 | 2002-12-31 | Mitsubishi Denki Kabushiki Kaisha | Method of plating semiconductor wafer and plated semiconductor wafer |
| DE19861248B4 (en) * | 1997-04-28 | 2005-03-17 | Mitsubishi Denki K.K. | Electrodeposition unit for semiconductor wafer coating - has anode with central opening to promote uniform deposited layer thickness |
-
1992
- 1992-11-24 JP JP33657392A patent/JP3221519B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6500325B2 (en) * | 1997-04-28 | 2002-12-31 | Mitsubishi Denki Kabushiki Kaisha | Method of plating semiconductor wafer and plated semiconductor wafer |
| DE19861248B4 (en) * | 1997-04-28 | 2005-03-17 | Mitsubishi Denki K.K. | Electrodeposition unit for semiconductor wafer coating - has anode with central opening to promote uniform deposited layer thickness |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3221519B2 (en) | 2001-10-22 |
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