JP3031478B2 - Wafer plating method and apparatus - Google Patents
Wafer plating method and apparatusInfo
- Publication number
- JP3031478B2 JP3031478B2 JP2150424A JP15042490A JP3031478B2 JP 3031478 B2 JP3031478 B2 JP 3031478B2 JP 2150424 A JP2150424 A JP 2150424A JP 15042490 A JP15042490 A JP 15042490A JP 3031478 B2 JP3031478 B2 JP 3031478B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- plating
- cylindrical body
- opening
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、IC（集積回路）を形成したウェハ上に、プ
リント基板へのボンディング用接続部（バンプ）を形成
するためのウェハの鍍金方法およびその装置に関する。The present invention relates to a method of plating a wafer for forming a connection portion (bump) for bonding to a printed circuit board on a wafer on which an IC (integrated circuit) is formed. And its device.
［従来の技術］ 集積回路の製造工程には、ウェハの表面上に形成した
ICのリード部に、ボンディング用のバンプを形成するバ
ンプ形成工程が含まれている。[Prior Art] In a process of manufacturing an integrated circuit, a semiconductor device is formed on a surface of a wafer.
The lead portion of the IC includes a bump forming step of forming a bonding bump.
このバンプ形成工程には、主とし蒸着による方法と鍍
金を用いた方法とが用いられているが、本発明はこのう
ち後者を対象としている。In this bump forming step, a method using vapor deposition and a method using plating are mainly used, and the present invention is directed to the latter method.
従来の鍍金法によるバンプ形成工程の概略を第３図
（ａ）〜（ｃ）にもとづいて説明すると、最初に鍍金の
共通電極を兼ねた中間金属層（例えば、Al/Cr/Cu）をウ
ェハ全面に蒸着し、ウェハＷの正面および裏面にレジス
ト（半田付着防止膜）101を形成し、各ICのリード部分1
02を露光することにより当該部分のみレジスト101を除
去する（同図（ａ））。次いで、後述する鍍金処理を施
して各ICのリード部分12にCu鍍金層103を形成し、さら
に、Cu鍍金層の半田鍍金層104を積層する（同図
（ｂ））。その後、レジスト101および不要の共通電極
層を除去するとともに、半田層鍍金104をリフローして
バンプＶを形成していた（同図（ｃ））。The outline of a bump forming process by a conventional plating method will be described with reference to FIGS. 3A to 3C. First, an intermediate metal layer (for example, Al / Cr / Cu) also serving as a common electrode for plating is formed on a wafer. A resist (solder adhesion preventing film) 101 is formed on the front and back surfaces of the wafer W, and the lead portion 1 of each IC is formed.
By exposing 02, the resist 101 is removed only in that portion (FIG. 7A). Next, a plating process described later is performed to form a Cu plating layer 103 on the lead portion 12 of each IC, and further, a solder plating layer 104 of the Cu plating layer is laminated (FIG. 2B). Thereafter, the resist 101 and the unnecessary common electrode layer were removed, and the solder layer plating 104 was reflowed to form the bump V (FIG. 3C).
鍍金処理は、第４図（ａ）に示すように、鍍金液の充
填された鍍金槽110内にウェハＷを並べて配置し、各ウ
ェハＷを負電極とするとともに、ウェハＷと対向して正
電極111を設けた構成により行なわれていた。In the plating process, as shown in FIG. 4 (a), the wafers W are arranged side by side in a plating tank 110 filled with a plating solution, each of the wafers W is used as a negative electrode, and the wafer W is positively opposed to the wafer W. This is performed by the configuration in which the electrode 111 is provided.
［発明が解決しようとする課題］ ところで、ICのボンディング作業は自動的に行なわれ
るために、各集積回路の鍍金層は均一な厚さとなってい
ることが好ましい。[Problems to be Solved by the Invention] Since the bonding work of the IC is performed automatically, it is preferable that the plating layer of each integrated circuit has a uniform thickness.
しかしながら、上述した従来の鍍金方法では、第４図
（ｂ）に示すように、ウェハＷの中央部に比べ縁部側の
鍍金層が厚くなってしまう欠点を有していた。その理論
的な原因として、電気力線Ｅが曲りによってウェハ端部
へ集中し、正電極111に生じたイオンが電気力線に沿っ
て動くことがあげられる。さらにまた、正電極111に生
じたイオンが対向するウェハＷの周囲にも放散されやす
く、隣接するウェハの縁部に入射することも考えられ
る。However, the conventional plating method described above has a disadvantage that the plating layer on the edge side is thicker than the central part of the wafer W, as shown in FIG. 4 (b). The theoretical cause is that the lines of electric force E concentrate on the edge of the wafer due to bending, and ions generated at the positive electrode 111 move along the lines of electric force. Furthermore, it is conceivable that the ions generated on the positive electrode 111 are easily scattered around the wafer W facing the same, and enter the edge of the adjacent wafer.
そこで、ウェハＷの周囲に金属環を設け、正電極111
からのイオンを対向ウェハの縁部外へ分散させる方法も
採られていたが、そのようにしても上記欠点を十分に解
消できなかった。Therefore, a metal ring is provided around the wafer W, and the positive electrode 111 is provided.
Although a method of dispersing ions from the outside of the edge of the opposing wafer has been adopted, the above-mentioned drawback cannot be sufficiently solved even by such a method.
また、第５図に示すように、筒状の鍍金噴射ノズル11
2を使用し、同ノズル112の一端開口部の近傍にウェハＷ
を配置し、このウェハＷを負電極とするとともに、同ノ
ズル112の中空部内に正電極113を設け、同ノズル112の
他端からウェハＷの表面へと鍍金液114を噴射すること
により鍍金処理する方法も行なわれていた。この方法
は、ウェハＷを一枚づつ装着して鍍金処理する構成のた
め、多量のウェハを処理するには作業性が悪く、しかも
設備コストが極めて高価格となる欠点を有していた。ま
た、ウェハＷの中央部と縁部での噴流圧や噴流速度の均
一化に難点があり、均一な鍍金厚を得るのは難しい。さ
らに、ウェハ上の各ICの鍍金厚を測定すると、一個のバ
ンプ内での鍍金厚が不均一であり、しかも鍍金液の噴射
圧により鍍金114が横にはみ出して形成され、第５図
（ｂ）のような不規則な形状となる欠点があった。Further, as shown in FIG.
2 and the wafer W near the one end opening of the nozzle 112.
The wafer W is used as a negative electrode, a positive electrode 113 is provided in the hollow portion of the nozzle 112, and a plating solution 114 is sprayed from the other end of the nozzle 112 onto the surface of the wafer W to perform a plating process. There was also a way to do it. This method has a drawback that the workability is inferior for processing a large number of wafers, and the equipment cost is extremely high because of the configuration in which the plating is performed by mounting the wafers W one by one. Further, there is a difficulty in making the jet pressure and jet speed uniform at the center and the edge of the wafer W, and it is difficult to obtain a uniform plating thickness. Further, when the plating thickness of each IC on the wafer was measured, the plating thickness within one bump was non-uniform, and the plating 114 protruded laterally due to the injection pressure of the plating solution. )).
本発明はこのような欠点を解決するためになされたも
ので、均一な厚さに鍍金層を形成できるウェハの鍍金方
法と、簡易な構成で同方法を実施することができるウェ
ハの鍍金装置の提供を目的とする。The present invention has been made in order to solve such a drawback, and a plating method of a wafer capable of forming a plating layer with a uniform thickness and a wafer plating apparatus capable of performing the method with a simple configuration. For the purpose of providing.
［課題を解決するための手段］ 上記目的を達成するために、本発明のウェハ鍍金方法
は、ウェハの正面形状とほぼ合致した開口部を有する筒
状体を用意し、この筒状体の一端部側に配置したウェハ
を負電極とし、前記筒状体の他端部側に正電極を配置し
た状態で、前記ウェハの表面またはその周辺部にほぼ平
行に鍍金液を噴出しながら鍍金する方法としてあり、好
ましい態様として、少なくともウェハと筒状体の一端部
側の開口部との間に隙間を形成してある。[Means for Solving the Problems] In order to achieve the above object, a wafer plating method of the present invention prepares a tubular body having an opening substantially conforming to the front shape of a wafer, and has one end of the tubular body. A method in which a wafer arranged on the side of the cylindrical body is used as a negative electrode, and a positive electrode is arranged on the other end side of the tubular body, and plating is performed while spraying a plating solution substantially parallel to the surface of the wafer or a peripheral portion thereof. In a preferred embodiment, a gap is formed at least between the wafer and the opening at one end of the cylindrical body.
また、本発明のウェハ鍍金装置は、ウェハの正面形状
とほぼ合致した開口部を一端に有すると筒状体と、この
筒状体の一端部側に設けられたウェハ固定手段と、この
固定手段に固定されたウェハを負電極とする手段と、前
記筒状体の他端部側に設けられた正電極と、ウェハの表
面またはその周辺部に鍍金液を噴出する手段とを備えた
構成としてある。Further, the wafer plating apparatus of the present invention has a cylindrical body having an opening substantially matching the front shape of the wafer at one end, a wafer fixing means provided at one end side of the cylindrical body, and the fixing means. Means having a wafer fixed to a negative electrode, a positive electrode provided on the other end side of the cylindrical body, and means for jetting a plating solution onto the surface of the wafer or a peripheral portion thereof. is there.
［作用］ 本発明のウェハ鍍金方法およびその装置によれば、ウ
ェハの正面形状とほぼ合致した開口部を一端に有する筒
状体により電気力線を閉じこめ直線的に延出させるの
で、正電極に生じたイオンをウェハの正面へと導くこと
ができ、周囲へ分散したりウェハ端部へ集中することが
大幅に緩和され、ウェハの表全体にわたりほぼ均一な厚
さの鍍金が形成される。According to the wafer plating method and apparatus of the present invention, the lines of electric force are confined by the cylindrical body having an opening at one end that substantially matches the front shape of the wafer and linearly extended. The resulting ions can be directed to the front of the wafer, which greatly reduces their dispersion and concentration at the edge of the wafer, and forms a substantially uniform thickness of plating over the entire surface of the wafer.
また、ウェハ表面とほぼ平行に鍍金液の噴流状態を形
成することにより、バンプ104のICチップ内における配
列の仕方に起因する鍍金イオンの供給速度の差を解消さ
せるので、ウェハ上の各IC内の鍍金層も均一な厚さで所
要の形状に形成される。Further, by forming a jet state of the plating solution substantially parallel to the wafer surface, the difference in the supply rate of the plating ions caused by the arrangement of the bumps 104 in the IC chip is eliminated. Is formed in a required shape with a uniform thickness.
［実施例］ 以下、本発明の一実施例について図面を参照して説明
する。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
第１図は本発明のウェハ鍍金装置に係る実施例の全体
構成を示す一部切欠斜視図、第２図（ａ）は同装置の断
面正面図、同図（ｂ）を同じく断面側面図である。FIG. 1 is a partially cutaway perspective view showing the entire configuration of an embodiment according to the wafer plating apparatus of the present invention, FIG. 2 (a) is a sectional front view of the apparatus, and FIG. is there.
第１図において、１は本実施例に係るウェハ鍍金装置
のユニット（以下、鍍金ユニットと称する）であり、鍍
金槽２内に多数個並べて設置されている。各鍍金ユニッ
ト１は、第２図（ａ），（ｂ）に示すごとく筐体３内に
納められており、筒状体４、およびこの筒状体４の一端
近傍にウェハ取付け板（ウェハ取付け手段）５を備えて
いる。筐体３の上端縁には、鍍金液流入用の切欠部3aが
設けられている。In FIG. 1, reference numeral 1 denotes a unit (hereinafter, referred to as a plating unit) of a wafer plating apparatus according to the present embodiment, and a large number of units are arranged in a plating tank 2. Each plating unit 1 is housed in a housing 3 as shown in FIGS. 2 (a) and 2 (b), and has a cylindrical body 4 and a wafer mounting plate (a wafer mounting plate) near one end of the cylindrical body 4. Means 5). A notch 3a for inflow of a plating solution is provided at an upper end edge of the housing 3.
筒状体４は、プラスチック等の絶縁材料で形成されて
おり、一端の開口部4aは、ウェハＷの正面形状とほぼ合
致する形状に形成してある。ところで、ウェハＷには、
位置決め用のオリフラが形成されているため、正確な正
面形状は円形とならないが、筒状体４の開口部形状は円
形としてもこの程度は許容範囲である。The cylindrical body 4 is formed of an insulating material such as plastic, and the opening 4a at one end is formed in a shape substantially matching the front shape of the wafer W. By the way, on the wafer W,
Since the positioning orientation flat is formed, the correct front shape is not circular. However, even if the shape of the opening of the cylindrical body 4 is circular, this degree is acceptable.
また、後述するようにウェハＷ上への噴流の必要上、
ウェハＷと開口部4aとの間に隙間ｄを必要とするため、
電気力線が外側へ流れる。したがって、筒状体の開口部
直径はウェハの直径より若干小さい方が好ましいが、あ
る程度の寸法の大小は許容され得る。Further, as described later, due to the necessity of jetting onto the wafer W,
Since a gap d is required between the wafer W and the opening 4a,
Lines of electric force flow outward. Therefore, it is preferable that the diameter of the opening of the cylindrical body is slightly smaller than the diameter of the wafer, but the size of a certain dimension is acceptable.
実験の結果、筒状体４の開口部形状を円形とし、５イ
ンチのウェハＷに対して同開口部の直径を9.0cm〜12.5c
m、４インチのウェハＷに対して同開口部の直径を7.0cm
〜10.0cmとした範囲では、十分に本発明の効果を得るこ
とができた。As a result of the experiment, the shape of the opening of the cylindrical body 4 was set to be circular, and the diameter of the opening was 9.0 cm to 12.5
m, the diameter of the opening is 7.0 cm for a 4-inch wafer W
Within the range of about 10.0 cm, the effects of the present invention could be sufficiently obtained.
筒状体４の開口部以外の中空部形状は任意でよいが、
好ましくは一端から他端にかけて開口部形状と同一の形
状とした方がよい。The shape of the hollow portion other than the opening of the tubular body 4 may be arbitrary,
Preferably, the shape from the one end to the other end is the same as the shape of the opening.
また、筒状体４の長さは任意でよいが、好ましくは５
インチのウェハＷに対して５〜15cm程度、４インチのウ
ェハＷに対しても５〜15cm程度に設定する。The length of the cylindrical body 4 may be arbitrary, but is preferably 5
The width is set to about 5 to 15 cm for an inch wafer W, and to about 5 to 15 cm for a 4 inch wafer W.
筒状体４の他端部には板状の正電極６が設けてあり、
電源７と接続してある。正電極６には、中空部4b内での
鍍金液の流れを形成するための透孔８が穿設してある。
電源７の出力は、公知のウェハ鍍金技術を参考にして適
宜調整すればよい。A plate-like positive electrode 6 is provided at the other end of the tubular body 4.
Connected to power supply 7. The positive electrode 6 is provided with a through hole 8 for forming a plating solution flow in the hollow portion 4b.
The output of the power supply 7 may be appropriately adjusted with reference to a known wafer plating technique.
ウェハ取付け板５は、側面にウェハＷを密着固定し、
筒状体４の開口部4a近傍に同ウェハＷを配置する部材で
ある。ここで、ウェハＷと開口部4aとの間には隙間のな
い状態が最も好ましいが、後述するようにウェハＷの表
面の周辺部に鍍金液を噴出する必要上、所要の隙間ｄを
確保しなければならない。実験の結果、４インチ,5イン
チ双方ともにウェハＷに対して隙間ｄが20mm以内であれ
ば、本発明の効果を得ることができた。The wafer mounting plate 5 tightly fixes the wafer W on the side surface,
A member for arranging the wafer W in the vicinity of the opening 4a of the cylindrical body 4. Here, it is most preferable that there is no gap between the wafer W and the opening 4a. However, since a plating solution needs to be jetted to the periphery of the surface of the wafer W as described later, a required gap d is secured. There must be. As a result of the experiment, the effect of the present invention could be obtained if the gap d with respect to the wafer W was within 20 mm for both the 4-inch and 5-inch wafers.
また、ウェハ取付け板５に固定されたウェハＷは、負
電極９としてある。The wafer W fixed to the wafer mounting plate 5 serves as a negative electrode 9.
第１図，第２図（ａ），（ｂ）において、10はウェハ
Ｗ表面の周辺部に鍍金液を噴出する手段としての鍍金噴
出パイプであり、上記隙間ｄの下方に設置されている。
鍍金噴出パイプ10には多数のノズル10aが設けられてお
り、それらのノズル10aをウェハＷの表面に向けた状態
としてある。この鍍金噴出パイプ10は、第１図に示すよ
うに、配管11を介して流量計12ないし循環ポンプ13に接
続されている。循環ポンプ13は、吸入管14を通して鍍金
槽２内の鍍金液を吸入し、配管11を通して各鍍金ユニッ
ト１の鍍金噴出パイプ10内に供給する。In FIGS. 1 and 2A and 2B, reference numeral 10 denotes a plating jet pipe as a means for jetting a plating solution to a peripheral portion of the surface of the wafer W, and is provided below the gap d.
A large number of nozzles 10a are provided in the plating ejection pipe 10, and the nozzles 10a are directed toward the surface of the wafer W. The plating discharge pipe 10 is connected to a flow meter 12 or a circulation pump 13 via a pipe 11 as shown in FIG. The circulation pump 13 sucks the plating solution in the plating tank 2 through the suction pipe 14 and supplies the plating solution into the plating jet pipe 10 of each plating unit 1 through the pipe 11.
次に、上述した実施例装置を用いた本発明のウェハ鍍
金方法に係る実施例を説明する。Next, an embodiment according to a wafer plating method of the present invention using the above-described embodiment apparatus will be described.
鍍金槽２内の鍍金液は、図示しない温調，ろ過槽との
間をゆっくりと循環している。鍍金ユニット１の筐体３
内へは、切欠部3aから鍍金液が流入する。The plating solution in the plating tank 2 is slowly circulating between a temperature control and filtration tank (not shown). Case 3 of plating unit 1
The plating solution flows into the inside from the notch 3a.
筒状体４の開口部4aの近傍にはあらかじめウェハＷの
固定してあるウェハ取付け板５を設置し、かつウェハＷ
を負電極９に接続する。そして、筒状体４の他端に設け
た正電極６ら負電極９に向けて一定の電流密度で所定時
間電流を流す。ここで、正電極６に流すべき積算電流量
（＝電流量×時間（amp・Ｈ））は、具体的な装置に応
じて実験的に最良の値を設定する。In the vicinity of the opening 4a of the cylindrical body 4, a wafer mounting plate 5 to which a wafer W is fixed in advance is installed.
Is connected to the negative electrode 9. Then, a current is caused to flow from the positive electrode 6 provided at the other end of the cylindrical body 4 to the negative electrode 9 at a constant current density for a predetermined time. Here, the integrated current amount to be passed through the positive electrode 6 (= current amount × time (amp · H)) is experimentally set to the best value depending on the specific device.
上述の状態においては、正電極６にイオンが発生し、
このイオンが筒状体４の中空部4bを通りウェハＷへと泳
動して、ウェハＷの表面に鍍金処理がなされる。ここ
で、筒状体４はウェハＷの正面形状にほほ合致した開口
部4aを有しており、当該開口部4aの近傍にウェハＷを固
定してあるので、イオンが放散することなくウェハＷの
表面へと進み、均一な厚さの鍍金槽を形成する。In the above state, ions are generated on the positive electrode 6,
These ions migrate through the hollow portion 4b of the cylindrical body 4 to the wafer W, and the surface of the wafer W is plated. Here, the cylindrical body 4 has an opening 4a which almost matches the front shape of the wafer W, and since the wafer W is fixed near the opening 4a, the wafer W is not diffused without ions. To form a plating tank having a uniform thickness.
また、鍍金処理の最中、鍍金噴出パイプ10から鍍金液
を噴出し、ウェハＷと筒状体４の開口部4aとの隙間ｄを
通してウェハＷの表面周辺部に、鍍金液の噴流状態を形
成させる。ここで、噴流状態とは、ウェハＷの表面に接
する鍍金液が常時流れている状態をいう。Also, during the plating process, a plating solution is jetted from the plating jet pipe 10 to form a jet flow state of the plating solution around the surface of the wafer W through the gap d between the wafer W and the opening 4a of the cylindrical body 4. Let it. Here, the jet state refers to a state where the plating solution in contact with the surface of the wafer W is constantly flowing.
このような噴流状態を形成した結果、バンプ104のIC
チップ内における配列の仕方に起因する鍍金イオンの供
給速度の差を消減させたので、ウェハＷ上の各集積回路
内の鍍金層も均一な厚さで形成され、しかも余分な鍍金
の付着やはみ出しもなく所要の形状に鍍金層が形成され
る。As a result of forming such a jet state, the IC of the bump 104
Since the difference in plating ion supply speed caused by the arrangement in the chip has been reduced, the plating layer in each integrated circuit on the wafer W is also formed with a uniform thickness, and the extra plating adheres or protrudes. No plating layer is formed in the required shape.
なお、本発明は上述した一実施例に限定されるもので
はない。Note that the present invention is not limited to the above-described embodiment.
例えば、本発明のウェハ鍍金装置をユニット化するこ
となく、直接鍍金槽内に設置してもよい。また、ウェハ
全体として鍍金層の縁部と中心部の厚みの差を解消する
ことのみを目的とし、各ICの個々的な鍍金層の厚さ精度
を考慮しなくてよい場合には、ウェハを筒状体の開口部
にはめ込み、隙間ｄをなくすこともできる。For example, the wafer plating apparatus of the present invention may be directly installed in a plating tank without being unitized. In addition, if the purpose is only to eliminate the difference in thickness between the edge and the center of the plating layer as a whole wafer, and it is not necessary to consider the thickness accuracy of the individual plating layer of each IC, the wafer may be used. The gap d can be eliminated by fitting into the opening of the cylindrical body.
［発明の効果］ 以上説明したように、本発明のウェハ鍍金方法によれ
ば、ウェハ全体にわたり均一な厚さの鍍金層を形成する
ことができ、さらに、ウェハ表面の周辺部に鍍金液の噴
流状態を形成すれば、ウェハ上の各IC内の鍍金層も均一
な厚さで所要の形状に形成できる効果がある。[Effects of the Invention] As described above, according to the wafer plating method of the present invention, it is possible to form a plating layer having a uniform thickness over the entire wafer, and further, to jet a plating solution around the wafer surface. If the state is formed, there is an effect that the plating layer in each IC on the wafer can be formed into a required shape with a uniform thickness.
また、本発明のウェハ鍍金装置によれば、簡単な構成
かつ低コストな設備で上記ウェハ鍍金方法を実施するこ
とができる。Further, according to the wafer plating apparatus of the present invention, the above-described wafer plating method can be performed with a simple configuration and low-cost equipment.
第１図は本発明のウェハ鍍金装置に係る実施例の全体構
成を示す一部切欠斜視図、第２図（ａ）は同装置の断面
正面図、同図（ｂ）は同じく断面側面図、第３図
（ａ），（ｂ），（ｃ）は鍍金による集積回路のバンプ
形成工程を示す断面図、第４図（ａ），（ｂ）および第
５図（ａ），（ｂ）はそれぞれ従来例を示す図である。 1:鍍金ユニット、2:鍍金槽 3:筐体、4:筒状体 4a:開口部、5:ウェハ取付け板 6:正電極、9:負電極 10:鍍金噴出パイプ、12:流量計 13:循環ポンプFIG. 1 is a partially cutaway perspective view showing the entire configuration of an embodiment of a wafer plating apparatus according to the present invention, FIG. 2 (a) is a cross-sectional front view of the same apparatus, and FIG. 3 (a), 3 (b) and 3 (c) are cross-sectional views showing a step of forming an integrated circuit bump by plating. FIGS. 4 (a) and 4 (b) and FIGS. 5 (a) and 5 (b) It is a figure which shows a conventional example, respectively. 1: Plating unit, 2: Plating tank 3: Casing, 4: Cylindrical body 4a: Opening, 5: Wafer mounting plate 6: Positive electrode, 9: Negative electrode 10: Plating jet pipe, 12: Flow meter 13: Circulation pump
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−103400（ＪＰ，Ａ) 特開 昭57−51287（ＪＰ，Ａ) 実開 昭51−67675（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) C25D 5/00 - 7/12 C25D 17/00 - 17/12 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-103400 (JP, A) JP-A-57-51287 (JP, A) Real-life opening Sho-51-67675 (JP, U) (58) Field (Int.Cl. 7 , DB name) C25D 5/00-7/12 C25D 17/00-17/12
Claims (3)
有する筒状体を用意し、この筒状体の一端部側に配置し
たウェハを負電極とし、前記筒状体の他端部側に正電極
を配置した状態で、前記ウェハの表面またはその周辺部
にほぼ平行に鍍金液を噴出しながら鍍金することを特徴
としたウェハの鍍金方法。1. A cylindrical body having an opening substantially matching the front shape of a wafer is prepared, and a wafer disposed at one end of the cylindrical body is used as a negative electrode, and the other end of the cylindrical body is used as a negative electrode. A plating method wherein a plating solution is jetted substantially in parallel to a surface of the wafer or a peripheral portion thereof in a state where a positive electrode is disposed on the wafer.
口部との間に隙間を形成したこと特徴とする請求項１記
載のウェハの鍍金方法。2. A plating method for a wafer according to claim 1, wherein a gap is formed at least between the wafer and an opening at one end of the cylindrical body.
層を形成するためのウェハの鍍金装置であって、 ウェハの正面形状とほぼ合致した開口部を一端に有する
筒状体と、 この筒状体の一端部側に設けらたウェハ固定手段と、 この固定手段に固定されたウェハを負電極とする手段
と、 前記筒状体の他端部側に設けられた正電極と、 ウェハの表面またはその周辺部に鍍金液を噴出する手段
と を備えたことを特徴とするウェハの鍍金装置。3. A wafer plating apparatus provided in a plating solution for forming a plating layer on a surface of a wafer, the cylindrical body having an opening at one end substantially conforming to a front shape of the wafer; Wafer fixing means provided on one end side of the cylindrical body, means for setting the wafer fixed to the fixing means as a negative electrode, positive electrode provided on the other end side of the cylindrical body, Means for jetting a plating solution onto the surface of the wafer or a peripheral portion thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2150424A JP3031478B2 (en) | 1990-06-08 | 1990-06-08 | Wafer plating method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2150424A JP3031478B2 (en) | 1990-06-08 | 1990-06-08 | Wafer plating method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0441699A JPH0441699A (en) | 1992-02-12 |
| JP3031478B2 true JP3031478B2 (en) | 2000-04-10 |
Family
ID=15496633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2150424A Expired - Lifetime JP3031478B2 (en) | 1990-06-08 | 1990-06-08 | Wafer plating method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3031478B2 (en) |
-
1990
- 1990-06-08 JP JP2150424A patent/JP3031478B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0441699A (en) | 1992-02-12 |
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