JPH06122965A - Device for forming ion vapor-deposited film - Google Patents

Device for forming ion vapor-deposited film

Info

Publication number
JPH06122965A
JPH06122965A JP27271192A JP27271192A JPH06122965A JP H06122965 A JPH06122965 A JP H06122965A JP 27271192 A JP27271192 A JP 27271192A JP 27271192 A JP27271192 A JP 27271192A JP H06122965 A JPH06122965 A JP H06122965A
Authority
JP
Japan
Prior art keywords
ion
source
film
substrate
evaporation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP27271192A
Other languages
Japanese (ja)
Inventor
Takashi Mikami
隆司 三上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP27271192A priority Critical patent/JPH06122965A/en
Publication of JPH06122965A publication Critical patent/JPH06122965A/en
Withdrawn legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To form an excellent vapor-deposited film with good reproducibility by injecting a vaporized particle current from the vaporization source for a substrate to be coated with a film and an ion beam from an ion source in the same direction. CONSTITUTION:A substrate holder 2 cooled by cooling water W and a compound particle source 3 obtained by integrating a vaporization source 32 and an ion source 31 are set in a vacuum chamber 1. A substrate S to be coated with a film is held by the holder 2, the chamber 1 is kept at a specified film forming vacuum by a vacuum pump 11, an ion beam IB is drawn out of the ion source 31, and vaporized particles VP are emitted from the source 32 to form a film on the substrate S. At this time, the vaporized particle current for the substrate S and the ion beam are injected in the same direction from the vaporization source 32 and ion source 31. Consequently, the adverse effect of the incident angle on the film quality is suppressed, and an ion vapor-deposited film forming device is obtained with the reproducibility of the formed film improved between the devices.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、高分子材料、金属、ガ
ラス、セラミック等の材料からなる各種基体表面に所望
の膜を形成するための膜形成装置、特に、蒸発源からの
所定物質の蒸着とイオン源からのイオン照射を併用して
成膜対象基体上に膜を形成するイオン蒸着膜形成装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus for forming a desired film on the surface of various substrates made of materials such as polymer materials, metals, glass, ceramics, etc. The present invention relates to an ion-deposited film forming apparatus that forms a film on a film-forming target substrate by using both evaporation and ion irradiation from an ion source.

【０００２】[0002]

【従来の技術】真空蒸着とイオン照射とを併用して成膜
する手法は、イオンの持つ高いエネルギーを利用して非
熱平衡下で成膜でき、低温下で良質の膜が得られる特徴
がある。この手法を用いたイオン蒸着膜形成装置の従来
例を図７に示す。2. Description of the Related Art A method of forming a film by using both vacuum vapor deposition and ion irradiation is characterized in that the high energy of ions can be used to form a film under non-thermal equilibrium and a high-quality film can be obtained at a low temperature. . FIG. 7 shows a conventional example of an ion-deposited film forming apparatus using this method.

【０００３】図７の装置は、蒸発源９１、イオン源９２
及び成膜対象基体Ｓを支持するホルダ９３を備えてい
る。これらは所定真空度（例えば１０-5Ｐａ）に維持可
能なチャンバ９４に収容されている。ホルダ９３は通水
パイプ９３１によって冷却水Ｗで冷却可能である。基体
Ｓは水冷されたホルダ９３に支持され、この基体表面に
対し、蒸発源９１から所定物質が蒸着され、また、イオ
ン源９２からイオンビーム９２ａが照射される。かくし
て基体Ｓの表面に膜が形成される。蒸着量は膜厚モニタ
９５により、イオン照射量はイオン電流を測定するイオ
ン電流モニタ９６にてそれぞれモニタされ、制御され
る。なお、基体Ｓは加熱されることもある。The apparatus shown in FIG. 7 has an evaporation source 91 and an ion source 92.
And a holder 93 that supports the film-forming target substrate S. These are housed in a chamber 94 capable of maintaining a predetermined degree of vacuum (for example, 10 −5 Pa). The holder 93 can be cooled with the cooling water W by the water passage pipe 931. The substrate S is supported by a water-cooled holder 93, and a predetermined substance is vapor-deposited from the evaporation source 91 and the ion beam 92a is irradiated from the ion source 92 onto the surface of the substrate. Thus, a film is formed on the surface of the substrate S. The deposition amount is monitored and controlled by the film thickness monitor 95, and the ion irradiation amount is monitored and controlled by the ion current monitor 96 which measures the ion current. The substrate S may be heated.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、従来の
イオン蒸着膜形成装置では、図７の従来装置にも示すよ
うに、基体Ｓに対する蒸発源９１からの蒸発粒子流９１
ａの入射方向と、イオン源９２からのイオンビーム９２
ａの入射方向が異なっており、このように両者の基体に
対する入射方向が異なっていることで、基体上の結晶配
向の角度が所望のものにならないとか、基体が立体物の
場合に、成膜したくない部分にまで成膜されるとかの問
題が生じることがあった。However, in the conventional ion-deposited film forming apparatus, as shown in the conventional apparatus of FIG. 7, the evaporated particle flow 91 from the evaporation source 91 with respect to the substrate S is also increased.
a direction of incidence of a and the ion beam 92 from the ion source 92.
Since the incident directions of a are different and the incident directions of the two substrates are different from each other in this way, the angle of crystal orientation on the substrates does not become the desired angle, or when the substrate is a three-dimensional object, a film is formed. There may be a problem that a film is formed even on a portion that is not desired.

【０００５】また、両者の入射方向が異なっているにも
拘らず、装置間で良好な再現性を得るには、蒸発源９１
からの蒸発粒子流９１ａとイオン源９２からのイオンビ
ーム９２ａのなす角度を一定に保つ必要があり、これが
装置設計、製作上の制約となっていた。そこで本発明
は、蒸発源からの所定物質の蒸着とイオン源からのイオ
ン照射を併用して成膜対象基体上に膜を形成するイオン
蒸着膜形成装置であって、成膜対象基体に対する蒸発源
からの蒸発粒子流の入射角とイオン源からのイオンビー
ムの入射角による膜質への悪影響を抑制でき、また、装
置間での膜形成の再現性が良好なイオン蒸着膜形成装置
を提供することを課題とする。Further, in order to obtain good reproducibility between the devices, the evaporation source 91 can be used regardless of the incident directions of the two.
It is necessary to keep the angle formed by the vaporized particle flow 91a from the ion source and the ion beam 92a from the ion source 92 constant, which is a constraint in designing and manufacturing the device. Therefore, the present invention is an ion deposition film forming apparatus for forming a film on a film-forming target substrate by using vapor deposition of a predetermined substance from an evaporation source and ion irradiation from an ion source in combination. To provide an ion-deposited film forming apparatus capable of suppressing adverse effects on the film quality due to the incident angle of the vaporized particle flow from the ion source and the incident angle of the ion beam from the ion source, and having good reproducibility of the film formation between the apparatuses. Is an issue.

【０００６】[0006]

【課題を解決するための手段】本発明者は前記課題を解
決するため、蒸発源からの所定物質の蒸着とイオン源か
らのイオン照射を併用して成膜対象基体上に膜を形成す
るイオン蒸着膜形成装置において、前記成膜対象基体に
対する前記蒸発源からの蒸発粒子流の入射方向と前記イ
オン源からのイオンビーム入射方向が同一方向となるよ
うに該蒸発源及びイオン源を設定したことを特徴とする
イオン蒸着膜形成装置を提供する。Means for Solving the Problems In order to solve the above-mentioned problems, the present inventor uses ions for forming a film on a substrate to be formed by using vapor deposition of a predetermined substance from an evaporation source and ion irradiation from an ion source in combination. In the vapor deposition film forming apparatus, the evaporation source and the ion source are set such that the incident direction of the vaporized particle flow from the evaporation source and the incident direction of the ion beam from the ion source on the film formation target substrate are the same. An ion vapor deposition film forming apparatus is provided.

【０００７】前記蒸発粒子流の入射方向とイオン源から
のイオンビーム入射方向が同一方向とは、同一方向とみ
て差し支えない場合や見做し得る場合も含むものであ
る。前記蒸発源とイオン源とは、これらを一体的に組み
合わせて複合粒子源としてもよい。The incident direction of the vaporized particle flow and the incident direction of the ion beam from the ion source include the case where it can be regarded as the same direction and the case where it can be considered. The evaporation source and the ion source may be combined together to form a composite particle source.

【０００８】[0008]

【作用】本発明のイオン蒸着膜形成装置によると、蒸発
源からの蒸発粒子流及びイオン源からのイオンビームは
成膜対象基体に対し同一方向から入射し、それによって
目的とする膜が形成される。蒸発源とイオン源とを一体
的に組み合わせて複合粒子源とする場合は蒸発粒子流と
イオンビームの入射方向をこの複合粒子源製作の段階で
同一方向に設定しておけるので、装置設計、製作がそれ
だけ容易となる。According to the ion-deposited film forming apparatus of the present invention, the vaporized particle flow from the evaporation source and the ion beam from the ion source are incident on the substrate to be filmed in the same direction, whereby the desired film is formed. It When an evaporation source and an ion source are integrally combined to form a composite particle source, the evaporating particle flow and the ion beam incident direction can be set in the same direction at the stage of manufacturing this composite particle source. Is that much easier.

【０００９】なお、蒸発源による所定物質の蒸着、イオ
ン源によるイオン照射は、これを同時に行う場合、交互
に行う場合等、様々の順序や回数が考えられる。The deposition of a predetermined substance by the evaporation source and the ion irradiation by the ion source can be performed in various orders and times, such as when they are performed simultaneously or when they are performed alternately.

【００１０】[0010]

【実施例】以下、本発明の実施例を図面を参照して説明
する。図１から図３は１実施例を、図４から図６は他の
実施例を示している。図１に示す実施例装置は、真空ポ
ンプ１１により１０-5Ｐａ程度の高真空に排気可能の真
空チャンバ１内に、冷却水Ｗにて水冷可能の基体ホルダ
２と、蒸発源及びイオン源を一体的に組み合わせた複合
粒子源３を設置したもので、ホルダ２の近傍には蒸着量
をモニタするための膜厚モニタ４と、イオン電流を測定
するためのイオン電流モニタ５を設置してある。Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show one embodiment, and FIGS. 4 to 6 show another embodiment. The apparatus of the embodiment shown in FIG. 1 includes a substrate holder 2 that can be water-cooled with cooling water W, an evaporation source and an ion source in a vacuum chamber 1 that can be evacuated to a high vacuum of about 10 −5 Pa by a vacuum pump 11. A composite particle source 3 that is integrally combined is installed, and a film thickness monitor 4 for monitoring the deposition amount and an ion current monitor 5 for measuring an ion current are installed near the holder 2. .

【００１１】図２は複合粒子源３の断面図であり、図３
はその平面図である。この複合粒子源３は、イオン源３
１と蒸発源３２とからなる。イオン源３１は、熱電子放
出用のフィラメント３１１及びプラズマ原料ガス導入部
３１２を備えたプラズマ生成室３１３の開口部に絶縁部
材３１４を介してイオン引き出しのための電極３１５を
設けたものである。電極３１５は多数のイオン通過孔３
１５ａを有している。FIG. 2 is a sectional view of the composite particle source 3, and FIG.
Is a plan view thereof. The composite particle source 3 is an ion source 3
1 and evaporation source 32. The ion source 31 has an electrode 315 for extracting ions through an insulating member 314 at an opening of a plasma generation chamber 313 provided with a filament 311 for emitting thermoelectrons and a plasma raw material gas introduction part 312. The electrode 315 has a large number of ion passage holes 3
15a.

【００１２】蒸発源３２は電極３１５の中央部に形成さ
れている。蒸発源３２は、ルツボ３２１、このルツボを
加熱するヒータ３２２、該ヒータを囲み、電極３１５と
電気的に絶縁する絶縁部材３３３からなる抵抗加熱式の
ものである。ルツボ３２１の開口３２１ａは電極３１５
のイオン通過孔３１５ａと同方向に向けられており、そ
れは基体ホルダ２上に支持される基体Ｓへ向く方向であ
る。The evaporation source 32 is formed at the center of the electrode 315. The evaporation source 32 is of a resistance heating type including a crucible 321, a heater 322 for heating the crucible, and an insulating member 333 surrounding the heater and electrically insulating from the electrode 315. The opening 321 a of the crucible 321 has an electrode 315.
Is oriented in the same direction as the ion passage hole 315a of the above, which is the direction toward the substrate S supported on the substrate holder 2.

【００１３】このイオン蒸着膜形成装置によると、基体
ホルダ２に成膜対象の基体Ｓが支持され、水冷される。
なお、必要に応じ加熱してもよい。チャンバ１内は真空
ポンプ１１にて所定の成膜真空度に維持される。また、
イオン源３１のプラズマ生成室３１３が図示しない真空
ポンプにより所定真空度まで排気されつつ、フィラメン
ト３１１に通電され、ガス導入部３１２から室内にプラ
ズマ原料ガスＧが導入される。According to this ion vapor deposition film forming apparatus, the substrate S to be film-formed is supported by the substrate holder 2 and cooled with water.
In addition, you may heat as needed. The inside of the chamber 1 is maintained at a predetermined film forming vacuum degree by a vacuum pump 11. Also,
While the plasma generation chamber 313 of the ion source 31 is evacuated to a predetermined vacuum degree by a vacuum pump (not shown), the filament 311 is energized and the plasma source gas G is introduced into the chamber from the gas introduction unit 312.

【００１４】かくして導入されたガスＧがフィラメント
３１１から放出される熱電子に励起されてプラズマ化
し、図示しない電源による電極３１５へのイオン引出し
電圧の印加により該電極のイオン通過孔３１５ａからイ
オンビームＩＢが引き出され、ホルダ２上の基体Ｓへ照
射される。一方、蒸発源３２のルツボ３２１に蒸発源物
質３２ａが入れられ、ヒータ３２２によりルツボ３２１
が加熱されることで該物質が蒸発し、蒸発粒子ＶＰがイ
オンビームＩＢと同方向に飛翔して基体Ｓに付着する。
かくして、イオンビームエネルギーを利用して該蒸発粒
子ＶＰに基づく膜が基体Ｓ上に形成される。The gas G thus introduced is excited by thermoelectrons emitted from the filament 311 to be turned into plasma, and an ion extraction voltage is applied to the electrode 315 by a power source (not shown) so that the ion beam IB is emitted from the ion passage hole 315a of the electrode. Are drawn out and irradiated onto the substrate S on the holder 2. On the other hand, the evaporation source substance 32a is put in the crucible 321 of the evaporation source 32, and the crucible 321 is heated by the heater 322.
Is heated to evaporate the substance, and the vaporized particles VP fly in the same direction as the ion beam IB and adhere to the substrate S.
Thus, the film based on the vaporized particles VP is formed on the substrate S by using the ion beam energy.

【００１５】なお、イオンビームＩＢの照射と蒸着の操
作は、形成しようとする膜の構造や種類等に応じて、同
時に、交互に、又は他の順序や回数で行われる。基体Ｓ
への蒸発粒子付着量は膜厚モニタ４で、イオン照射量は
イオン電流モニタ５でそれぞれ監視され、それに基づき
適切に制御される。次に図４から図６に示す実施例につ
いて説明する。この装置は、図１の装置において、複合
粒子源３に代えて複合粒子源３０を採用したものであ
る。他の点は図１の装置と同構成である。The ion beam IB irradiation and vapor deposition operations are performed simultaneously, alternately, or in another order or number of times, depending on the structure and type of the film to be formed. Substrate S
The amount of vaporized particles adhering to the film is monitored by the film thickness monitor 4, and the amount of ion irradiation is monitored by the ion current monitor 5, and is appropriately controlled based on this. Next, the embodiment shown in FIGS. 4 to 6 will be described. This apparatus employs a composite particle source 30 in place of the composite particle source 3 in the apparatus of FIG. The other points are the same as those of the apparatus shown in FIG.

【００１６】複合粒子源３０は図１の複合粒子源３にお
いて、蒸発源３２に代えて電子ビーム蒸発源３３を採用
したものである。蒸発源３３はイオン源電極３１５の中
心部に設けた銅ルツボ３３１と電子銃３３２とを含むも
のである。ルツボ３３１は蒸発源物質３３ａを収容する
ハースライナ３３１ａで内装され、通水空間ＳＰをあけ
て外装した絶縁性外壁３３１ｂで囲まれている。該通水
空間ＳＰには水冷パイプ３３１ｃが接続されており、ル
ツボ３３１はこれにより冷却水Ｗで冷却される。The composite particle source 30 employs an electron beam evaporation source 33 in place of the evaporation source 32 in the composite particle source 3 of FIG. The evaporation source 33 includes a copper crucible 331 and an electron gun 332 provided in the center of the ion source electrode 315. The crucible 331 is internally equipped with a hearth liner 331a that contains the evaporation source substance 33a, and is surrounded by an insulating outer wall 331b that is provided as an exterior with the water passage space SP opened. A water cooling pipe 331c is connected to the water passage space SP, and thus the crucible 331 is cooled by the cooling water W.

【００１７】ハースライナ３３１ａの開口は電極３１５
のイオン通過孔３１５ａと同方向に向けられている。こ
のハースライナ３３１ａに収容された蒸発源物質３３ａ
は電子銃３３２からのエレクトロンビームＥＢの照射に
より加熱されて蒸発し、その蒸発粒子ＶＰは基体Ｓへ飛
翔する。この装置の他の作用は図１の装置におけるそれ
と同様である。The opening of the hearth liner 331a has an electrode 315.
Of the ion passage hole 315a. The evaporation source material 33a contained in the hearth liner 331a
Is heated and evaporated by the irradiation of the electron beam EB from the electron gun 332, and the evaporated particles VP fly to the substrate S. The other operations of this device are similar to those in the device of FIG.

【００１８】以上説明した各実施例によると、蒸発源３
２、３３からの蒸発粒子ＶＰ流及びイオン源３１からの
イオンビームＩＢは成膜対象基体Ｓに対し同一方向から
入射するので、蒸発粒子流の入射角とイオンビーム入射
角による膜質への悪影響が抑制される。また、装置間で
の膜形成の再現性が良好となる。なお、前記各実施例に
おいて、イオン源の多孔式電極の中央に蒸発源を設ける
ことによりイオンビームのプロファイル（分布）に影響
があり、イオンビームの中心付近の電流密度が低下する
のではないかという懸念については、多孔式引出し電極
の場合には、１つのイオン通過孔から引き出すイオンビ
ームはある発散角を有しており、多孔式電極の孔を電極
上に均一に設けた際には、イオン源からある距離に配置
された基体上において中心付近の電流密度が大きくなる
傾向があるので、基板との距離を適正化することによ
り、イオン源の引出し電極中央に蒸発源を設けることに
よるイオンビームのプロファイル変化は、大きな問題と
はならない。According to the embodiments described above, the evaporation source 3
Since the vaporized particle VP flows from the ionizers 2 and 33 and the ion beam IB from the ion source 31 are incident on the film-forming target substrate S from the same direction, the film quality is adversely affected by the incident angle of the evaporated particle flow and the ion beam incident angle. Suppressed. In addition, the reproducibility of film formation between devices becomes good. In each of the above-mentioned embodiments, by providing an evaporation source at the center of the porous electrode of the ion source, the profile (distribution) of the ion beam may be affected, and the current density near the center of the ion beam may be reduced. Regarding the concern that, in the case of a porous extraction electrode, the ion beam extracted from one ion passage hole has a certain divergence angle, and when the holes of the porous electrode are uniformly provided on the electrode, Since the current density near the center tends to increase on the substrate placed at a certain distance from the ion source, by optimizing the distance from the substrate, it is possible to install an evaporation source at the center of the extraction electrode of the ion source. Beam profile changes are not a major issue.

【００１９】[0019]

【発明の効果】以上説明したように本発明によると、蒸
発源からの所定物質の蒸着とイオン源からのイオン照射
を併用して成膜対象基体上に膜を形成するイオン蒸着膜
形成装置であって、成膜対象基体に対する蒸発源からの
蒸発粒子流の入射角とイオン源からのイオンビームの入
射角による膜質への悪影響を抑制でき、また、装置間で
の膜形成の再現性が良好なイオン蒸着膜形成装置を提供
することができる。As described above, according to the present invention, an ion-deposited film forming apparatus for forming a film on a film-forming target substrate by using vapor deposition of a predetermined substance from an evaporation source and ion irradiation from an ion source is used in combination. Therefore, it is possible to suppress adverse effects on the film quality due to the incident angle of the vaporized particle flow from the evaporation source and the incident angle of the ion beam from the ion source to the substrate to be film-formed, and the reproducibility of film formation between the devices is good. It is possible to provide a simple ion vapor deposition film forming apparatus.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の１実施例の概略断面図である。FIG. 1 is a schematic sectional view of an embodiment of the present invention.

【図２】図１の装置における複合粒子源の断面図であ
る。2 is a cross-sectional view of a composite particle source in the device of FIG.

【図３】図１の装置における複合粒子源の平面図であ
る。3 is a plan view of a composite particle source in the apparatus of FIG.

【図４】本発明の他の実施例の概略断面図である。FIG. 4 is a schematic sectional view of another embodiment of the present invention.

【図５】図４の装置における複合粒子源の断面図であ
る。5 is a cross-sectional view of a composite particle source in the device of FIG.

【図６】図４の装置における複合粒子源の平面図であ
る。6 is a plan view of a composite particle source in the apparatus of FIG.

【図７】従来例の概略断面図でるあ。FIG. 7 is a schematic sectional view of a conventional example.

【符号の説明】[Explanation of symbols]

１ 真空チャンバ ２ 基体ホルダ ３、３０ 複合粒子源 ３１ イオン源 ３２、３３ 蒸発源 ４ 膜厚モニタ ５ イオン電流モニタ Ｓ 基体 1 Vacuum Chamber 2 Substrate Holder 3, 30 Composite Particle Source 31 Ion Source 32, 33 Evaporation Source 4 Film Thickness Monitor 5 Ion Current Monitor S Substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 蒸発源からの所定物質の蒸着とイオン源
からのイオン照射を併用して成膜対象基体上に膜を形成
するイオン蒸着膜形成装置において、前記成膜対象基体
に対する前記蒸発源からの蒸発粒子流の入射方向と前記
イオン源からのイオンビーム入射方向が同一方向となる
ように該蒸発源及びイオン源を設定したことを特徴とす
るイオン蒸着膜形成装置。1. An ion deposition film forming apparatus for forming a film on a substrate to be film-formed by using vapor deposition of a predetermined substance from an evaporation source and ion irradiation from an ion source together, wherein the evaporation source for the substrate to be film-formed. The evaporation source and the ion source are set such that the incident direction of the vaporized particle flow from the ion source and the incident direction of the ion beam from the ion source are the same. 【請求項２】 前記蒸発源と前記イオン源とを一体的に
組み合わせて複合粒子源とした請求項１記載のイオン蒸
着膜形成装置。2. The ion vapor deposition film forming apparatus according to claim 1, wherein the evaporation source and the ion source are integrally combined to form a composite particle source.
JP27271192A 1992-10-12 1992-10-12 Device for forming ion vapor-deposited film Withdrawn JPH06122965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27271192A JPH06122965A (en) 1992-10-12 1992-10-12 Device for forming ion vapor-deposited film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27271192A JPH06122965A (en) 1992-10-12 1992-10-12 Device for forming ion vapor-deposited film

Publications (1)

Publication Number Publication Date
JPH06122965A true JPH06122965A (en) 1994-05-06

Family

ID=17517725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27271192A Withdrawn JPH06122965A (en) 1992-10-12 1992-10-12 Device for forming ion vapor-deposited film

Country Status (1)

Country Link
JP (1) JPH06122965A (en)

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