JPS63472A - Vacuum device for forming film - Google Patents
Vacuum device for forming filmInfo
- Publication number
- JPS63472A JPS63472A JP14123786A JP14123786A JPS63472A JP S63472 A JPS63472 A JP S63472A JP 14123786 A JP14123786 A JP 14123786A JP 14123786 A JP14123786 A JP 14123786A JP S63472 A JPS63472 A JP S63472A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- particles
- electron beam
- evaporating
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000010894 electron beam technology Methods 0.000 claims abstract description 27
- 238000001704 evaporation Methods 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 22
- 230000008020 evaporation Effects 0.000 claims description 15
- 239000007787 solid Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（以下、余白）
３、発明の詳細な説明
（産業上の利用分野）
本発明は基板上に膜を形成するための真空成膜装置に関
するものである。Detailed Description of the Invention (Hereinafter, blank spaces) 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a vacuum film forming apparatus for forming a film on a substrate.
従来、真空蒸着、スパッタ蒸着、イオンブレーティング
などにおいてイオンを使った薄膜形成技術は、比較的低
い温度で薄膜゛形成が可能なため複雑化する製造工程の
中で特に重要視されてきている。イオンを利用する技術
では必要とする反応エネルギーの一部又は大部分を加速
による運動エネルギーやイオンの電荷量の効果で置きか
えている。イオンを利用する場合、プラズマ中で生じた
イオンを直接その領域で利用するプラズマ法と、イオン
源等を用いて発生したイオンを高真空中に引出して利用
するイオンビーム法がある。イオンビーム法において真
空蒸着装置内に補助的なイオン源を設け、蒸着時に金属
イオンや反応性ガスイオンを基板上に同時に照射する方
法やベルジャ内に設けられた蒸発源からの蒸発物質の一
部をイオン化して中性原子とともに膜形成を行う方法な
どの開発はさかんである。ここで補助的にガスをイオン
化する手段としてはタングステンフィラメントを加熱し
て放出される熱電子をそのまま、又はグリッドで加速し
て気体分子に照射する方法が最も代表的で、イオンビー
ムスパッタ装置におけるイオン源やクラスタイオンビー
ム法等においても用いられている。Conventionally, thin film forming techniques using ions in vacuum evaporation, sputter evaporation, ion blating, etc. have been particularly important in increasingly complex manufacturing processes because thin films can be formed at relatively low temperatures. In technologies using ions, part or most of the required reaction energy is replaced by kinetic energy due to acceleration and the effect of the amount of charge of the ions. When using ions, there are two methods: a plasma method, in which ions generated in a plasma are directly utilized in that region, and an ion beam method, in which ions generated using an ion source are extracted into a high vacuum and utilized. In the ion beam method, an auxiliary ion source is installed in the vacuum evaporation equipment, and metal ions and reactive gas ions are simultaneously irradiated onto the substrate during evaporation. There is ongoing development of methods to ionize and form films together with neutral atoms. The most typical method of ionizing the gas as an auxiliary method is to heat a tungsten filament and irradiate the gas molecules with thermionic electrons emitted as they are or by accelerating them with a grid. It is also used in source and cluster ion beam methods.
このタイプの電子発生源は蒸着源から蒸着物質がとぶと
ころの、すぐ近傍でイオン化されるように設置されてい
るのが一般的である。しかし電子発生源がこの位置にあ
ると粒子がイオン化されてから基板に到達するまでにか
なりの距離を飛ぶことになり、この間にお互いのイオン
のもつ電荷によるクーロン力（反発力）のためにビーム
が広がり、収率が悪くなる。従ってイオン化するための
電子源は基板に近いところにあればイオン化された粒子
がより効率よく基板に堆積することになる。しかし前述
のような熱陰極では、電子の放出方向が全方向であるた
めにもし基板に近付けて配置すると基板に直接熱電子が
照射さね、基板温度が不必要に上昇してしまう恐れがあ
る。従って有機膜等低融点のものを成膜したい場合や、
プラスチック等熱の影響をうけやすい基板を用いたい場
合には不都合な点が多い。This type of electron source is generally installed so that the ionization occurs in the immediate vicinity of the point where the deposition material jumps from the deposition source. However, if the electron source is located in this position, the particles will have to travel a considerable distance after being ionized before reaching the substrate, and during this time the beam will be emitted due to the Coulomb force (repulsion) caused by the charges of each ion. spreads, resulting in poor yield. Therefore, if the electron source for ionization is located close to the substrate, ionized particles will be deposited on the substrate more efficiently. However, with the hot cathode described above, electrons are emitted in all directions, so if it is placed close to the substrate, the thermal electrons will not directly irradiate the substrate, which may cause the substrate temperature to rise unnecessarily. . Therefore, when you want to form a film with a low melting point such as an organic film,
There are many disadvantages when it is desired to use a substrate that is easily affected by heat, such as plastic.
本発明は上述した従来の欠点を解消し、基板への熱輻射
の影響が少なく、かつ収率よく蒸着粒子を堆積すること
のできる真空成膜装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a vacuum film forming apparatus which eliminates the above-mentioned conventional drawbacks, has less influence of thermal radiation on a substrate, and is capable of depositing vapor deposition particles with good yield.
（問題点を解決するための手段）
このような目的を達成するために、本発明の真空成膜装
置は、蒸発源と基板支持具と蒸発源から蒸発した粒子を
基板支持具に支持されている基板に到達する前にイオン
化するための電子ビームを発生する固体電子ビーム発生
装置を備えていることを特徴とする。(Means for Solving the Problems) In order to achieve such an object, the vacuum film forming apparatus of the present invention includes an evaporation source, a substrate support, and particles evaporated from the evaporation source are supported by the substrate support. The present invention is characterized in that it includes a solid-state electron beam generator that generates an electron beam to ionize the electron beam before reaching the substrate.
本発明によればイオン化用電子源として固体電子ビーム
発生装置を用い、基板支持台近傍に配置したことにより
、イオン化された粒子が互いに反発してビームが広がる
ことの少ないつまり収率の高い成膜が達成でき、また冷
陰極型電子源であるため、基板への熱輻射がなく、有機
物等の薄膜をイオン化して成膜する場合にも膜質の制御
性がよい。According to the present invention, by using a solid-state electron beam generator as an ionization electron source and placing it near the substrate support, ionized particles are less likely to repel each other and the beam spreads, which means that film formation with high yield can be achieved. Moreover, since it is a cold cathode electron source, there is no heat radiation to the substrate, and the film quality can be controlled well even when forming a thin film of an organic substance by ionizing it.
以下に図面を参照して本発明の詳細な説明する。 The present invention will be described in detail below with reference to the drawings.
第１図は本発明に係る真空成膜装置の一実施例の構成を
示す概略図である。図においてＭＥＢは固体電子ビーム
発生装置である。FIG. 1 is a schematic diagram showing the structure of an embodiment of a vacuum film forming apparatus according to the present invention. In the figure, MEB is a solid-state electron beam generator.
固体電子ビーム発生装置としては、半導体中に形成され
た異種接合に電界を印加して半導体表面から外部に電子
ビームを放射させる装置が知られており、例えは特公昭
５４−３０２７４号公報、特開昭５４−１１１２７２号
公報（’ＵＳＰ４２５９６７８ ） 、特開昭５６−１
５５２９号公報（Ｕ Ｓ Ｐ ４３０３９３０ ） 、
特開昭５７−３８５２８号公報等に開示されている。第
１図に示す固体電子ビーム発生装置ＭＥＢとしてこれら
の装置を使用できる。固体電子ビーム発生装置は数百、
数十個の電子発生源が一列に、または２次元平面上に並
んだものであるがこれを１ユニツトとするとペルジャー
内にいくつあってもよい。また、蒸着粒子のビームに電
子が照射させるような配置ならばそれぞれのＭＥＢはど
んな配置でもよい。図において、１は加速電極であり、
ＭＥＢから出射された電子を加速する。２は基板であり
、３は基板ホルダーで内部にヒーターを内蔵した構造に
しても無論構わない。４は基板温度をモニターする熱電
対である。５はイオンを基板にむけて加速してひきつけ
るために基板に電位を与えるための電源である。６はシ
ャッター、７は蒸発源、８は蒸発粒子流である。この蒸
発源には抵抗加熱のためのフィラメント、電子ビーム蒸
着用ルツボ、クラスタイオンビーム法に用いられるよう
なルツボ等が使用できる。電子ビームが直進運動して長
い平均自由行程をも″つためにはＩＯ〜Ｉ Ｏ−６Ｔｏ
ｒｒ以下の真空度が必要であるが、その範囲の圧力で成
膜が可能ならばこれら以外の蒸発源であってもかまわな
い。As a solid-state electron beam generator, a device that applies an electric field to a heterojunction formed in a semiconductor and emits an electron beam to the outside from the semiconductor surface is known. Publication No. 54-111272 ('USP4259678), Japanese Patent Publication No. 56-1
Publication No. 5529 (USP 4303930),
It is disclosed in Japanese Patent Application Laid-Open No. 57-38528. These devices can be used as the solid-state electron beam generator MEB shown in FIG. There are hundreds of solid-state electron beam generators,
Several tens of electron generating sources are arranged in a line or on a two-dimensional plane, and if these are considered as one unit, there may be any number of them in the Pelger. Furthermore, each MEB may be arranged in any manner as long as it is arranged so that electrons are irradiated with the beam of vapor-deposited particles. In the figure, 1 is an accelerating electrode,
Accelerates electrons emitted from the MEB. 2 is a substrate, and 3 is a substrate holder, which may of course have a structure with a built-in heater. 4 is a thermocouple that monitors the substrate temperature. Reference numeral 5 denotes a power source for applying a potential to the substrate in order to accelerate and attract ions toward the substrate. 6 is a shutter, 7 is an evaporation source, and 8 is an evaporation particle flow. As this evaporation source, a filament for resistance heating, a crucible for electron beam evaporation, a crucible used in cluster ion beam method, etc. can be used. In order for the electron beam to move in a straight line and have a long mean free path, IO~I O-6To
Although a degree of vacuum of rr or lower is required, other evaporation sources may be used as long as the film can be formed at a pressure within this range.
本装置において蒸発源の位置を基準点とし、基板表面ま
での距離をし、また、電子ビームが走査している面Ｅま
での距離をｄとすると２ｄ＞Ｌの関係に配置されている
。このように配置することによって、イオン化された蒸
発粒子が互いに反発することが少なく、効率よくイオン
を基板上に堆積することができる。ＭＥＢは半導体から
なる素子であり、電子を放出してもその指向性が強いの
で基板に不必要に照射されることはない、もし電子ビー
ムが広がることがあっても一対の電磁レンズを設ければ
よいので装置全体にとって本質的な問題にはならない。In this apparatus, when the position of the evaporation source is taken as a reference point, the distance to the substrate surface is taken as d, and the distance to the surface E scanned by the electron beam is taken as d, the evaporation sources are arranged in a relationship of 2d>L. By arranging them in this manner, the ionized evaporated particles are less likely to repel each other, and ions can be efficiently deposited on the substrate. MEB is an element made of semiconductor, and even if it emits electrons, the directionality is strong, so the substrate will not be unnecessarily irradiated. Even if the electron beam spreads, a pair of electromagnetic lenses should be installed. This is not an essential problem for the entire device.
また、ＭＥＢは小型であるから装置全体の大きさを制限
するＬが従来の電子発生源を用いた場合よりも小さくで
きる。そしてなお２ｄ＞Ｌの条件をみたすようＭＥＢを
基板支持台近傍に配置しても成膜中基板への熱輻射の影
響がない状態が達成できる。Furthermore, since the MEB is small, L, which limits the overall size of the device, can be made smaller than when a conventional electron source is used. Furthermore, even if the MEB is arranged near the substrate support stand so as to satisfy the condition 2d>L, a state in which there is no influence of thermal radiation on the substrate during film formation can be achieved.
第２図および第３図は固体電子ビーム発生装置の配置例
を示す図である。第２図においては固体電子ビーム発生
装置ＭＥＢは同一平面Ｅ内で蒸発粒子ビーム８を囲む円
周上に複数個配置されており、第３図においては、同一
平面Ｅ内で蒸発粒子ビーム８を挟んで対向して配置され
ている。このように固体電子ビーム発生装置は自由に配
置できる。FIGS. 2 and 3 are diagrams showing examples of the arrangement of solid-state electron beam generators. In FIG. 2, a plurality of solid-state electron beam generators MEB are arranged on the circumference surrounding the evaporated particle beam 8 within the same plane E, and in FIG. They are placed opposite each other. In this way, the solid-state electron beam generator can be freely arranged.
（発明の効果）
本発明によれば蒸発物質を蒸発した後イオン化、加速し
て基板上に薄膜を堆積する装置において、イオン化用電
子源として固体電子ビーム発生装置を用い、基板支持台
近傍に配置したことにより、イオン化された粒子が互い
に反発してビームが広がることの少ないつまり収率の高
い成膜が達成でき、また冷陰極型電子源であるため、基
板への熱輻射がなく、有機物等の薄膜をイオン化して成
膜する場合にも膜質の制御性がよい。また小型の電子源
であるため、真空槽の必要最低限の大きさがより小さく
なり、真空容器製造上のコスト低減、または排気時間の
短縮が可能であるという副次的効果もあわせて達成でき
る。(Effects of the Invention) According to the present invention, in an apparatus for depositing a thin film on a substrate by ionizing and accelerating an evaporated substance after evaporating, a solid-state electron beam generator is used as an ionization electron source, and the device is disposed near the substrate support. As a result, ionized particles repel each other and the beam spreads less, which means that it is possible to achieve high-yield film formation.Also, since it is a cold cathode electron source, there is no heat radiation to the substrate, and organic materials, etc. The controllability of film quality is also good when forming a thin film by ionization. In addition, since it is a small electron source, the minimum required size of the vacuum chamber is smaller, which also has the secondary effect of reducing the cost of manufacturing the vacuum chamber and shortening the evacuation time. .
第１図は本発明に係る、一実施例の構成を示す概要図、
第２図、第３図はそれぞれ固体電子ビーム発生製蓋の配
置例を示す図である。
１・・・加速電極、
２・・・基板、
３・・・基板ホルダ１
．４・・・熱電対、
５・・・電源、
６・・・シャッタ、
７・・・蒸発源、
８・・・蒸発粒子、
ＭＥＢ・・・固体電子ビーム発生装置。
第１図FIG. 1 is a schematic diagram showing the configuration of an embodiment of the present invention, and FIGS. 2 and 3 are diagrams each showing an example of the arrangement of a solid-state electron beam generating lid. DESCRIPTION OF SYMBOLS 1... Accelerating electrode, 2... Substrate, 3... Substrate holder 1. 4... Thermocouple, 5... Power supply, 6... Shutter, 7... Evaporation source, 8... Evaporation particle, MEB... Solid state electron beam generator. Figure 1
Claims (2)
た粒子が前記基板支持具に支持されている基板に到達す
る前に該粒子をイオン化するための電子ビームを発生す
る固体電子ビーム発生装置を備えていることを特徴とす
る真空成膜装置。(1) An evaporation source, a substrate support, and a solid-state electron beam that generates an electron beam for ionizing particles evaporated from the evaporation source before the particles reach the substrate supported by the substrate support. A vacuum film forming apparatus characterized by being equipped with a generator.
体電子ビーム発生装置から発生された電子ビームの飛行
面までの距離をそれぞれＬおよびｄとした時２ｄ＞Ｌと
なるように前記固体電子ビーム発生装置が配置されてい
ることを特徴とする特許請求の範囲第１項記載の真空成
膜装置。(2) When the distance from the evaporation source to the substrate and the distance to the flight surface of the electron beam generated from the solid-state electron beam generator are L and d, respectively, the solid-state electron beam is arranged such that 2d>L. 2. The vacuum film forming apparatus according to claim 1, further comprising a generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14123786A JPS63472A (en) | 1986-06-19 | 1986-06-19 | Vacuum device for forming film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14123786A JPS63472A (en) | 1986-06-19 | 1986-06-19 | Vacuum device for forming film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63472A true JPS63472A (en) | 1988-01-05 |
Family
ID=15287293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14123786A Pending JPS63472A (en) | 1986-06-19 | 1986-06-19 | Vacuum device for forming film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63472A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03111558A (en) * | 1989-06-13 | 1991-05-13 | Fuji Electric Co Ltd | Sputtering device |
| US5114559A (en) * | 1989-09-26 | 1992-05-19 | Ricoh Company, Ltd. | Thin film deposition system |
| US5133849A (en) * | 1988-12-12 | 1992-07-28 | Ricoh Company, Ltd. | Thin film forming apparatus |
| US5196226A (en) * | 1991-04-23 | 1993-03-23 | Riken Vitamin Co., Ltd. | Powdery foaming agent |
| KR100880352B1 (en) | 2007-06-01 | 2009-01-23 | (주) 에이알티 | Flexible film sputter system having film pass port for inflow prevention of gas |
| JP2011518954A (en) * | 2008-04-28 | 2011-06-30 | ライトラブ・スウェーデン・エービー | Deposition system |
| US10138157B2 (en) | 2014-12-22 | 2018-11-27 | Schott Ag | Lead-through or connecting element with improved thermal loading capability |
-
1986
- 1986-06-19 JP JP14123786A patent/JPS63472A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5133849A (en) * | 1988-12-12 | 1992-07-28 | Ricoh Company, Ltd. | Thin film forming apparatus |
| JPH03111558A (en) * | 1989-06-13 | 1991-05-13 | Fuji Electric Co Ltd | Sputtering device |
| US5114559A (en) * | 1989-09-26 | 1992-05-19 | Ricoh Company, Ltd. | Thin film deposition system |
| US5196226A (en) * | 1991-04-23 | 1993-03-23 | Riken Vitamin Co., Ltd. | Powdery foaming agent |
| DE4213258C2 (en) * | 1991-04-23 | 2003-02-13 | Riken Vitamin Co | Powdery foaming agent |
| KR100880352B1 (en) | 2007-06-01 | 2009-01-23 | (주) 에이알티 | Flexible film sputter system having film pass port for inflow prevention of gas |
| JP2011518954A (en) * | 2008-04-28 | 2011-06-30 | ライトラブ・スウェーデン・エービー | Deposition system |
| US10138157B2 (en) | 2014-12-22 | 2018-11-27 | Schott Ag | Lead-through or connecting element with improved thermal loading capability |
| US10457588B2 (en) | 2014-12-22 | 2019-10-29 | Schott Ag | Lead-through or connecting element with improved thermal loading capability |
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