JPH06105232B2 - Insulation gate electric field effect type moisture sensitive element - Google Patents
Insulation gate electric field effect type moisture sensitive elementInfo
- Publication number
- JPH06105232B2 JPH06105232B2 JP16664786A JP16664786A JPH06105232B2 JP H06105232 B2 JPH06105232 B2 JP H06105232B2 JP 16664786 A JP16664786 A JP 16664786A JP 16664786 A JP16664786 A JP 16664786A JP H06105232 B2 JPH06105232 B2 JP H06105232B2
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- moisture sensitive
- gate electrode
- effect type
- sensitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は水蒸気の吸着・脱着に伴う有機物の電気的イン
ピーダンスの変化から絶縁ゲート電界効果型トランジス
タを利用することにより雰囲気中の相対湿度を検出する
絶縁ゲート電界効果型感湿素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial field of application) The present invention uses an insulated gate field effect transistor in an atmosphere due to changes in the electrical impedance of organic substances due to adsorption / desorption of water vapor. The present invention relates to an insulated gate electric field effect type moisture sensitive element for detecting relative humidity of.
（従来の技術） 感湿素子としては従来から金属酸化物焼結結体を用いた
もの、電解質塩を用いたもの、セラミックを用いたも
の、親水性有機物を用いたもの等が知られているが、い
ずれも一長一短であり用途を選んで利用されている。親
水性有機物は感湿範囲が広く感湿応答速度が速く低コス
ト化し易い、さらに絶縁ゲート電界効果型トランジスタ
を用いて親水性有機物の電気的インピーダンスの変化を
検出することで高出力で小形の感湿素子が実現できる。
実際の素子ではゲート電極上に親水性有機物の薄膜を形
成するのであるが、その方法としては従来、浸漬あるい
はスピンコーティングによって絶縁ゲート電界効果型ト
ランジスタの表面に親水性有機物を付着させ、後に加熱
ないし光照射することで結晶化または共重合反応により
硬化せしめている。次にプラズス・エッチングでゲート
電極（一般にはAuが用いられる）上に領域を限定して親
水性有機物をパターニングする方法がよく知られてい
る。(Prior Art) As a moisture sensitive element, conventionally, one using a metal oxide sintered body, one using an electrolyte salt, one using a ceramic, one using a hydrophilic organic substance, etc. are known. However, both have advantages and disadvantages, and they are used depending on the intended use. A hydrophilic organic substance has a wide moisture-sensitive range and a high moisture-sensitive response speed, and it is easy to reduce the cost.In addition, by detecting changes in the electrical impedance of the hydrophilic organic substance using an insulated gate field effect transistor, a high output and a small-sized sense can be obtained. A wet element can be realized.
In an actual device, a thin film of a hydrophilic organic substance is formed on the gate electrode.The conventional method is to deposit the hydrophilic organic substance on the surface of the insulated gate field effect transistor by dipping or spin coating, and then heat or It is cured by crystallization or copolymerization reaction by irradiation with light. Next, a method is well known in which a hydrophilic organic material is patterned by limiting the region on the gate electrode (generally Au is used) by plasma etching.
（発明が解決しようとする問題点） ゲート電極上に硬化、成膜された親水性有機物（以降感
湿膜と呼ぶ）とゲート電極との密着性に若干の問題があ
り特に90％RH以上の高湿度雰囲気中で長時間放置した場
合、ゲート電極から感湿膜が剥離することもありうる。
本発明の目的は、従来とは異なる素子構造により高湿度
雰囲気中でも安定した感湿特性を示す絶縁ゲート電界効
果型感湿素子を提供することである。(Problems to be solved by the invention) There is a slight problem in the adhesion between the gate electrode and a hydrophilic organic substance (hereinafter referred to as a moisture sensitive film) that is hardened and formed on the gate electrode. If left in a high humidity atmosphere for a long time, the moisture sensitive film may peel off from the gate electrode.
It is an object of the present invention to provide an insulated gate field effect type humidity sensitive element that exhibits stable moisture sensitivity characteristics even in a high humidity atmosphere by an element structure different from the conventional one.
（問題点を解決するための手段） この目的を達成させるために、本発明は次のような構成
としている。すなわち絶縁ゲート電界効果型トランジス
タのゲート領域を除く領域に酸化シリコンを凸状に積層
させ、素子表面の酸化シリコンに対し凹状となったゲー
ト電極上に親水性有機物が周囲の酸化シリコンの壁と接
触する状態で充満された構造としている。(Means for Solving Problems) In order to achieve this object, the present invention has the following configuration. That is, silicon oxide is laminated in a convex shape in a region excluding the gate region of the insulated gate field effect transistor, and the hydrophilic organic substance contacts the wall of the surrounding silicon oxide on the gate electrode which is concave with respect to the silicon oxide on the device surface. It has a structure that is filled with the condition.
（作用） 親水性有機物を加熱あるいは光照射により硬化した後の
密着性において金属であるゲート電極よりも酸化シリコ
ンの方が優れている。ゲート電極上を除く周囲に酸化シ
リコンの壁を凸状に生成し酸化シリコンの側面と接触す
る状態でゲート電極上に親水性有機物を硬化すると、生
成される感湿膜は、側面の酸化シリコンに挟持される形
でゲート電極と密着することになる。結果として、酸化
シリコンの層により、感湿膜をゲート電極上に限ってパ
ターニングしながら、ゲート電極と感湿膜の密着性を高
めることができる。(Function) Silicon oxide is superior to the metal gate electrode in the adhesiveness after the hydrophilic organic substance is cured by heating or light irradiation. When a hydrophilic organic substance is cured on the gate electrode in a state where a silicon oxide wall is formed in a convex shape on the periphery except on the gate electrode and is in contact with the side surface of the silicon oxide, the generated moisture-sensitive film is formed on the side surface of the silicon oxide. It will be in close contact with the gate electrode in a sandwiched form. As a result, the silicon oxide layer can enhance the adhesion between the gate electrode and the moisture sensitive film while patterning the moisture sensitive film only on the gate electrode.
（実施例） 本発明の実施例を第１図並びに第２図を参照しながら説
明する。(Embodiment) An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
また、本発明による感湿素子の製造工程を第３図に示
す。Further, the manufacturing process of the moisture sensitive element according to the present invention is shown in FIG.
本発明による絶縁ゲート電界効果型感湿素子は未処理の
Si基板にソース領域とドレイン領域を形成するため表面
を酸化させた後のソース領域とドレイン領域を除く部分
にレジストマスクをし、ソース領域とドレイン領域上の
SiO2をエッチングして取り除く。その後に不純物を拡散
し、基板（１）にソース領域（２）とドレイン領域
（３）を形成する。感湿部以外のソース・ドレイン間の
SiO2をエッチングした後基板の表面不純物濃度を上げチ
ャネルストッパ層を形成する。こうすることによりチャ
ネル以外では反転層が生じにくくなる。次に、素子のパ
ッシペーションを得るため表面のSi酸化膜（４）をかけ
なおし、更にSi3N4膜（５）を形成する。この後、ゲー
トパターニング用に全面にSiO2層（６）をスパッタで形
成し、ゲート領域以外にレジストマスクをかけゲート領
域上のSiO2層をエッチングして取り除く。次に、ソース
領域とドレイン領域からオーミック接触を取るためのコ
ンタクトホールを穴あけする。手順としてはまずコンタ
クトホール上部のSiO2を沸化アンモンによりエッチング
して取り除き、さらにその下のSi3N4膜はプラズマエッ
チングにより削除する。The insulated gate field effect moisture sensitive device according to the present invention is untreated.
After the surface is oxidized to form the source and drain regions on the Si substrate, a resist mask is applied to the part excluding the source and drain regions,
SiO 2 is removed by etching. After that, impurities are diffused to form a source region (2) and a drain region (3) on the substrate (1). Between the source and drain except for the moisture sensitive part
After etching SiO 2 , the surface impurity concentration of the substrate is increased to form a channel stopper layer. By doing so, the inversion layer is less likely to occur except in the channel. Next, the Si oxide film (4) on the surface is redone to obtain the passivation of the device, and the Si 3 N 4 film (5) is further formed. After that, an SiO 2 layer (6) is formed on the entire surface by sputtering for gate patterning, and a SiO 2 layer on the gate region is removed by etching by applying a resist mask to the region other than the gate region. Next, a contact hole for making ohmic contact with the source region and the drain region is opened. As a procedure, first, SiO 2 on the upper part of the contact hole is removed by etching with ammonium fluoride, and the Si 3 N 4 film thereunder is removed by plasma etching.
その後、例えばCr,Cu,Auの順にコンタクトホールに対し
蒸着スパッタしてパッドを形成する。After that, for example, Cr, Cu, and Au are sequentially deposited on the contact holes by vapor deposition sputtering to form pads.
次にゲート電極（７）を例えばCr,Auの順に蒸着あるい
はスパッタしてつくる。Next, the gate electrode (7) is formed, for example, by depositing or sputtering Cr and Au in this order.
ここで、親水性有機物をスピンコーティングないし浸漬
してゲート電極上にSiO2の層で囲まれた凹部に充填した
後、加熱または光照射することで結晶化あるいは光重合
反応をひき起し硬化させて感湿膜（８）を形成する。こ
の際に感湿膜とSiO2の密着性を高めるのに、親水性有機
物を塗布する前にシラン結合試薬等の付着促進剤をスピ
ンコーティングにより素子表面に付着してもよい。Here, a hydrophilic organic substance is spin-coated or dipped to fill the concave portion surrounded by the SiO 2 layer on the gate electrode, and then heated or irradiated with light to cause crystallization or a photopolymerization reaction to be cured. To form a moisture sensitive film (8). At this time, in order to enhance the adhesion between the moisture sensitive film and SiO 2 , an adhesion promoter such as a silane bonding reagent may be attached to the surface of the element by spin coating before applying the hydrophilic organic substance.
この後に、感湿膜上にレジストをかけた上でO2（酸素）
中でプラズマアッシングすることによりゲート電極上以
外の親水性有機物を取り去り、感湿部パターニングを仕
上げる。また感湿膜上に信号電圧印加並びにリード線取
り出し用の電極（９）としてAu等を蒸着、スパッタす
る。最後に周辺の信号処理用の電気回路に接続できるよ
うにリード線をボンディングする。After this, apply a resist on the moisture-sensitive film and then add O 2 (oxygen).
By performing plasma ashing in the inside, hydrophilic organic substances other than those on the gate electrode are removed to complete the patterning of the moisture sensitive portion. Further, Au or the like is vapor-deposited and sputtered on the moisture sensitive film as an electrode (9) for applying a signal voltage and taking out a lead wire. Finally, a lead wire is bonded so that it can be connected to an electric circuit for signal processing in the periphery.
以上の工程により絶縁ゲート電界効果型感湿素子が製造
できる。The insulated gate field effect type humidity sensitive element can be manufactured by the above steps.
本発明の構成による絶縁ゲート電界効果型感湿素子にお
いては、ゲート電極上を凸状に囲む様にパターニングさ
れたSiO2の層により、親水性有機物よりなる感湿膜が挟
持される状態でゲート電極上に硬化、形成されることに
なる。従ってゲート電極と感湿膜の密着力に加え、SiO2
と感湿膜の密着力が保持力として作用する。結果、特に
高湿雰囲気中で問題とされていた親水性有機物とゲート
電極との密着性が改善され、高湿中においても安定した
感湿特性を示す絶縁ゲート電界効果型感湿素子が得られ
る。In the insulated gate field effect type moisture sensitive element according to the configuration of the present invention, the gate is formed with a moisture sensitive film made of a hydrophilic organic material sandwiched by a layer of SiO 2 patterned so as to surround the gate electrode in a convex shape. It will be cured and formed on the electrode. Therefore, in addition to the adhesion between the gate electrode and the moisture sensitive film, SiO 2
And the adhesion of the moisture sensitive film acts as a holding force. As a result, the adhesion between the hydrophilic organic substance and the gate electrode, which has been a problem especially in a high humidity atmosphere, is improved, and an insulated gate field effect type humidity sensitive element exhibiting stable moisture sensitivity characteristics even in a high humidity can be obtained. .
第１図は本発明の実施例を示す素子の構造の要部断面
図、第２図は第１図で示した素子の部分別に分離して示
した平面図および断面図、第３図は本発明の素子を製造
する時の工程を示す工程説明図である。 １…基板、２…ソース領域、３…ドレイン領域、４…Si
O2層、５…Si3N4層、６…ゲートパターニングSiO2層、
７…ゲート電極、８…親水性有機物（感湿層）、９…ゲ
ート上部電極、10…ドレインコンタクトホール、11…ソ
ースコンタクトホール、12…チャンネルストッパー領
域。FIG. 1 is a sectional view of the essential part of the structure of an element showing an embodiment of the present invention, FIG. 2 is a plan view and a sectional view separately showing the element shown in FIG. 1, and FIG. It is process explanatory drawing which shows the process at the time of manufacturing the element of invention. 1 ... Substrate, 2 ... Source region, 3 ... Drain region, 4 ... Si
O 2 layer, 5 ... Si 3 N 4 layer, 6 ... Gate patterning SiO 2 layer,
7 ... Gate electrode, 8 ... Hydrophilic organic substance (moisture-sensitive layer), 9 ... Gate upper electrode, 10 ... Drain contact hole, 11 ... Source contact hole, 12 ... Channel stopper region.
フロントページの続き (72)発明者 岩井 隆賀 神奈川県横浜市磯子区新杉田町８ 株式会 社東芝横浜金属工場内 (56)参考文献 特開 昭59−164952（ＪＰ，Ａ)Front Page Continuation (72) Inventor Takaga Iwai 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa 8 Yokohama Stock Works (56) References JP-A-59-164952 (JP, A)
Claims (1)
ト電極を除く他の領域上に酸化シリコンを積層し、ゲー
ト電極上を素子表面の酸化シリコンに対し凹状とするこ
とにより、親水性有機物をゲート電極上に限ってパター
ニングしたことを特徴とする絶縁ゲート電界効果型感湿
素子。1. A hydrophilic organic substance is formed by stacking silicon oxide on a region other than a gate electrode of an insulated gate field effect transistor and forming a recess on the gate electrode with respect to silicon oxide on the device surface. An insulated gate electric field effect type humidity sensitive device characterized by being patterned only on the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16664786A JPH06105232B2 (en) | 1986-07-17 | 1986-07-17 | Insulation gate electric field effect type moisture sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16664786A JPH06105232B2 (en) | 1986-07-17 | 1986-07-17 | Insulation gate electric field effect type moisture sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6325542A JPS6325542A (en) | 1988-02-03 |
| JPH06105232B2 true JPH06105232B2 (en) | 1994-12-21 |
Family
ID=15835147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16664786A Expired - Lifetime JPH06105232B2 (en) | 1986-07-17 | 1986-07-17 | Insulation gate electric field effect type moisture sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06105232B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535662A (en) * | 2004-04-02 | 2007-12-06 | カミンズ，チモシー | Integrated electronic sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104062322A (en) * | 2014-07-10 | 2014-09-24 | 苏州能斯达电子科技有限公司 | Humidity sensor and preparation method thereof |
-
1986
- 1986-07-17 JP JP16664786A patent/JPH06105232B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535662A (en) * | 2004-04-02 | 2007-12-06 | カミンズ，チモシー | Integrated electronic sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6325542A (en) | 1988-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06105232B2 (en) | Insulation gate electric field effect type moisture sensitive element | |
| JPH02253628A (en) | Manufacture of semiconductor device | |
| JPS61120958A (en) | Ion sensor having glass response film | |
| US6127268A (en) | Process for fabricating a semiconductor device with a patterned metal layer | |
| JPS60146145A (en) | Oxygen electrode | |
| JPH02189936A (en) | Manufacture of semiconductor device | |
| JPS56147434A (en) | Manufacture of semiconductor device | |
| JPH0311736A (en) | Wiring electrode of integrated circuit | |
| JPS62291127A (en) | Semiconductor device | |
| JPS5965476A (en) | Semiconductor device | |
| JPS60252253A (en) | Fet sensor | |
| JPH01318240A (en) | Manufacture of semiconductor device | |
| JPH02198141A (en) | Manufacture of bump electrode of semiconductor device | |
| JPS60186030A (en) | Bonding method | |
| JPS6059742B2 (en) | Semiconductor device and its manufacturing method | |
| JPH01162142A (en) | Field effect type moisture sensor | |
| JPS5843540A (en) | Wiring formation in semiconductor device | |
| JPS5812441Y2 (en) | Semiconductor device electrode structure | |
| JPS62135760A (en) | Production of semiconductor ion sensor | |
| JPS63147345A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JP2003098145A (en) | Semiconductor chemical sensor | |
| JPH0738468B2 (en) | Method of manufacturing magnetoresistive element | |
| JPH0342823A (en) | Semiconductor device and its manufacture | |
| JPS5984442A (en) | Manufacture of semiconductor device | |
| JPS60230048A (en) | Field effect type semiconductor sensor |