JPH059265A - Sealing resin composition and semiconductor-sealing apparatus - Google Patents

Sealing resin composition and semiconductor-sealing apparatus

Info

Publication number
JPH059265A
JPH059265A JP19074591A JP19074591A JPH059265A JP H059265 A JPH059265 A JP H059265A JP 19074591 A JP19074591 A JP 19074591A JP 19074591 A JP19074591 A JP 19074591A JP H059265 A JPH059265 A JP H059265A
Authority
JP
Japan
Prior art keywords
resin
resin composition
sealing
epoxy resin
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19074591A
Other languages
Japanese (ja)
Inventor
Goji Nishikawa
剛司 西川
Kazuhiro Sawai
和弘 沢井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP19074591A priority Critical patent/JPH059265A/en
Publication of JPH059265A publication Critical patent/JPH059265A/en
Pending legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)

Abstract

PURPOSE:To prepare the title compsn. which is excellent in resistance to heat and soldering heat and can be guaranteed of long-term reliability by compounding a specific epoxy resin, a phenol resin having a cyclic terpene backbone, and a specified amt. of an inorg. filler. CONSTITUTION:The title compsn. is prepd. by compounding an epoxy resin of formula I (wherein n is 0, 1, or higher) (e.g. a resin of formula II). a phenol resin having a terpene backbone (e.g. a resin of formula III), and an inorg. filler (e.g. a silica powder) in an amt. of 25-90wt.% of the compsn. A mold release agent (e.g. a natural or synthetic wax, or a metal salt of a linear fatty acid). a flame retardant (e.g. antimony trioxide), etc., may be added if necessary. The compsn. can be used for sealing a semiconductor device as well as for sealing, coating, or insulating an electric or electronic part.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、耐湿性、半田耐熱性に
優れた封止用樹脂組成物および半導体封止装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing resin composition having excellent moisture resistance and solder heat resistance, and a semiconductor sealing device.

【0002】[0002]

【従来の技術】近年、半導体集積回路の分野において、
高集積化、高信頼性化の技術開発と同時に半導体装置の
実装工程の自動化が推進されている。例えばフラットパ
ッケージ型の半導体装置を回路基板に取り付ける場合
に、従来、リードピン毎に半田付けを行っていたが、最
近では半田浸漬方式や半田リフロー方式が採用されてい
る。
2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as technology development for high integration and high reliability, automation of the mounting process of semiconductor devices is being promoted. For example, when mounting a flat package type semiconductor device on a circuit board, conventionally, soldering is performed for each lead pin, but recently, a solder dipping method or a solder reflow method has been adopted.

【0003】[0003]

【発明が解決しようとする課題】従来のノボラック型エ
ポキシ樹脂などのエポキシ樹脂、ノボラック型フェノー
ル樹脂およびシリカ粉末からなる樹脂組成物によって封
止した半導体装置は、装置全体の半田浴浸漬を行うと耐
湿性が低下するという欠点があった。特に吸湿した半導
体装置を浸漬すると、封止樹脂と半導体チップおよび封
止樹脂とリードフレームとの間の剥がれや、内部樹脂ク
ラックが生じて著しい耐湿性劣化を起こし、電極の腐食
による断線や水分によるリーク電流を生じ、その結果、
半導体装置は、長期間の信頼性を保証することができな
いという欠点があった。
A semiconductor device sealed with a conventional resin composition comprising an epoxy resin such as a novolac type epoxy resin, a novolac type phenolic resin and silica powder has a moisture resistance when the entire device is immersed in a solder bath. There was a drawback that the property deteriorated. Particularly when a semiconductor device that has absorbed moisture is immersed, peeling between the encapsulating resin and the semiconductor chip and between the encapsulating resin and the lead frame causes internal resin cracking, resulting in significant deterioration in moisture resistance. Leakage current, resulting in
The semiconductor device has a drawback in that it cannot guarantee long-term reliability.

【0004】本発明は、上記の欠点を解消するためにな
されたもので、吸湿の影響が少なく、特に半田浴浸漬後
の耐湿性、半田耐熱性に優れ、封止樹脂と半導体チップ
あるいは封止樹脂とリードフレームとの剥がれや内部樹
脂クラックの発生がなく、また電極の腐食による断線や
水分によるリーク電流の発生もなく、長期信頼性を保証
できる封止用樹脂組成物および半導体封止装置を提供し
ようとするものである。
The present invention has been made in order to solve the above-mentioned drawbacks, has little influence of moisture absorption, and is particularly excellent in moisture resistance and solder heat resistance after being immersed in a solder bath. A resin composition for encapsulation and a semiconductor encapsulation device capable of ensuring long-term reliability without peeling of the resin and the lead frame or generation of internal resin cracks, and without occurrence of wire breakage due to electrode corrosion or leakage current due to moisture. It is the one we are trying to provide.

【0005】[0005]

【課題を解決するための手段】本発明者らは、上記の目
的を達成しようと鋭意研究を重ねた結果、特定のエポキ
シ樹脂、環状テルペン骨格を有するフェノール樹脂を用
いることによって、耐湿性、半田耐熱性に優れた樹脂組
成物が得られることを見いだし、本発明を完成したもの
である。
Means for Solving the Problems As a result of intensive studies to achieve the above object, the present inventors have found that by using a specific epoxy resin or a phenol resin having a cyclic terpene skeleton, moisture resistance, solder The present invention has been completed by finding that a resin composition having excellent heat resistance can be obtained.

【0006】すなわち、本発明は、(A)次の式で示さ
れるエポキシ樹脂
That is, the present invention provides (A) an epoxy resin represented by the following formula:

【0007】[0007]

【化3】 (但し、式中nは 0又は 1以上の整数を表す)、(B)
環状テルペン骨格を有するフェノール樹脂および(C)
無機質充填剤を必須成分とし、前記(C)無機質充填剤
を樹脂組成物に対して25〜90重量%の割合で含有してな
ることを特徴とする封止用樹脂組成物である。また、こ
の封止用樹脂組成物の硬化物によって、半導体装置が封
止されてなることを特徴とする半導体封止装置である。
[Chemical 3] (However, in the formula, n represents 0 or an integer of 1 or more), (B)
Phenolic resin having cyclic terpene skeleton and (C)
A resin composition for encapsulation, comprising an inorganic filler as an essential component and the inorganic filler (C) in an amount of 25 to 90% by weight based on the resin composition. A semiconductor encapsulation device is obtained by encapsulating a semiconductor device with a cured product of the encapsulating resin composition.

【0008】以下、本発明を詳細に説明する。The present invention will be described in detail below.

【0009】本発明に用いる(A)エポキシ樹脂として
は、前記の式で示されるものが使用され、その分子量等
に制限されることなく使用することができる。例えば
As the epoxy resin (A) used in the present invention, those represented by the above formula are used, and the epoxy resin can be used without being limited by the molecular weight and the like. For example

【0010】[0010]

【化4】 が挙げられる。また、このエポキシ樹脂には、ノボラッ
ク系エポキシ樹脂やエピビス系エポキシ樹脂を併用する
ことができる。
[Chemical 4] Is mentioned. In addition, a novolac-based epoxy resin or an epibis-based epoxy resin can be used in combination with this epoxy resin.

【0011】本発明に用いる(B)環状テルペン骨格を
有するフェノール樹脂としては、化5に示されるものが
挙げられ、その分子構造、分子量などに特に制限される
ことはない。環状テルペン骨格の導入をするテルペン化
合物は、フェノール類とテルペン化合物を反応させたも
のや、p-メンタ-2,8,(9)- ジエン、テルピノレン、α−
テルピノレンなどのテルペン化合物が挙げられる。
Examples of the phenol resin having a cyclic terpene skeleton (B) used in the present invention include those represented by Chemical formula 5, and the molecular structure and molecular weight thereof are not particularly limited. The terpene compound for introducing the cyclic terpene skeleton is a compound obtained by reacting a phenol with a terpene compound, p-mentha-2,8, (9) -diene, terpinolene, α-
Examples include terpene compounds such as terpinolene.

【0012】[0012]

【化5】 (但し、式中nは 1以上の整数を表す)また、この樹脂
には、フェノール、アルキルフェノール等のフェノール
類とホルムアルデヒドあるいはパラホルムアルデヒドと
を反応させて得られるノボラック型フェノール樹脂およ
びこれらの変性樹脂を混合して使用することができる。
[Chemical 5] (However, in the formula, n represents an integer of 1 or more.) Further, this resin includes a novolac type phenol resin obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde, and modified resins thereof. It can be mixed and used.

【0013】本発明に用いる(C)無機質充填剤として
は、一般に使用されているものが広く使用されるが、そ
れらの中でも不純物濃度が低く、平均粒径30μm 以下の
シリカ粉末が好ましく使用される。平均粒径が30μm を
超えると耐湿性および成形性が劣り好ましくない。無機
質充填剤の配合割合は、全体の樹脂組成物に対して50〜
90重量%含有することが好ましい。その割合が50重量%
未満では樹脂組成物の吸湿性が高く、半田浸漬後の耐湿
性に劣り、また90重量%を超えると極端に流動性が悪く
なり成形性に劣り好ましくない。
As the inorganic filler (C) used in the present invention, generally used ones are widely used. Among them, silica powder having a low impurity concentration and an average particle diameter of 30 μm or less is preferably used. . If the average particle size exceeds 30 μm, the moisture resistance and the moldability are deteriorated, which is not preferable. The blending ratio of the inorganic filler is 50 to the whole resin composition.
It is preferable to contain 90% by weight. 50% by weight
When it is less than 100% by weight, the resin composition has a high hygroscopicity and is inferior in moisture resistance after immersion in solder, and when it exceeds 90% by weight, the fluidity is extremely poor and the moldability is inferior, which is not preferable.

【0014】本発明の封止用樹脂組成物は、前述した特
定のエポキシ樹脂、環状テルペン骨格を有するフェノー
ル樹脂および無機質充填剤を必須成分とするが、本発明
の目的に反しない限度において、また必要に応じて、例
えば天然ワックス類、合成ワックス類、直鎖脂肪酸の金
属塩、酸アミド、エステル類、パラフィンなどの離型
剤、三酸化アンチモンなどの難燃剤、カーボンブラック
などの着色剤、シランカップリング剤、種々の硬化促進
剤、ゴム系やシリコーン系の低応力付与剤等を適宜添加
・配合することができる。
The encapsulating resin composition of the present invention contains the above-mentioned specific epoxy resin, phenol resin having a cyclic terpene skeleton, and an inorganic filler as essential components, but within a range not deviating from the object of the present invention. If necessary, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, release agents such as paraffin, flame retardants such as antimony trioxide, colorants such as carbon black, silanes. A coupling agent, various curing accelerators, rubber-based or silicone-based low stress imparting agents, and the like can be appropriately added and blended.

【0015】本発明の封止用樹脂組成物を成形材料とし
て調製する場合の一般的方法は、前述のエポキシ樹脂、
環状テルペン骨格を有するフェノール樹脂および無機質
充填剤その他を配合し、ミキサー等によって十分均一に
混合した後、さらに熱ロールによる溶融混合処理又はニ
ーダ等による混合処理を行い、次いで冷却固化させ適当
な大きさに粉砕して成形材料とすることができる。ま
た、この成形材料を用いて半導体素子をセットした金型
内にトランスファー注入して硬化させて本発明の半導体
封止装置を製造することができる。成形材料は半導体素
子の封止の他に、電子部品あるいは電気部品の封止また
は被覆・絶縁等にも使用することができ、それらに優れ
た特性を付与することができる。
The general method for preparing the encapsulating resin composition of the present invention as a molding material is to use the above-mentioned epoxy resin,
A phenol resin having a cyclic terpene skeleton, an inorganic filler, and the like are blended, and after sufficiently uniform mixing with a mixer or the like, further melt mixing treatment with a heat roll or mixing treatment with a kneader etc., followed by cooling and solidification to an appropriate size. It can be ground into a molding material. Further, the semiconductor encapsulation device of the present invention can be manufactured by transfer-injecting into a mold in which a semiconductor element is set using this molding material and curing it. The molding material can be used not only for sealing semiconductor elements but also for sealing or covering / insulating electronic parts or electric parts, and can impart excellent properties to them.

【0016】[0016]

【作用】本発明の封止用樹脂組成物は、特定のエポキシ
樹脂と環状テルペン骨格を有するフェノール樹脂を用い
ることによって、樹脂組成物のガラス転移温度が上昇
し、熱機械的特性と低応力性が向上し、半田浸漬、半田
リフロー後の樹脂クラックの発生がなくなり耐湿性劣化
が少なくなるものである。
In the encapsulating resin composition of the present invention, by using a specific epoxy resin and a phenol resin having a cyclic terpene skeleton, the glass transition temperature of the resin composition rises, thermomechanical properties and low stress Is improved, the occurrence of resin cracks after solder immersion and solder reflow is eliminated, and the deterioration of moisture resistance is reduced.

【0017】[0017]

【実施例】次に本発明の実施例について説明するが、本
発明は以下の実施例に限定されるものではない。以下の
実施例および比較例において「%」とは「重量%」を意
味する。
EXAMPLES Examples of the present invention will be described below, but the present invention is not limited to the following examples. In the following examples and comparative examples, “%” means “% by weight”.

【0018】実施例1 前述した特定のエポキシ樹脂17%、次式に示した環状テ
ルペン骨格を有するフェノール樹脂10%、
Example 1 17% of the specific epoxy resin described above, 10% of a phenol resin having a cyclic terpene skeleton represented by the following formula,

【0019】[0019]

【化6】 シリカ粉末72%、硬化促進剤 0.3%、エステルワックス
0.3%およびシランカップリング剤 0.4%を常温で混合
し、さらに90〜95℃で混練冷却した後、粉砕して成形材
料(A)を製造した。
[Chemical 6] 72% silica powder, 0.3% hardening accelerator, ester wax
0.3% and a silane coupling agent 0.4% were mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to produce a molding material (A).

【0020】実施例2 実施例1で用いたエポキシ樹脂 9%、下式で示した環状
テルペン骨格を有するフェノール樹脂 8%、
Example 2 Epoxy resin 9% used in Example 1, phenol resin having a cyclic terpene skeleton represented by the following formula 8%,

【0021】[0021]

【化7】 オルソクレゾールノボラック型エポキシ樹脂 8%、シリ
カ粉末74%、硬化促進剤0.3%、エステルワックス 0.3
%およびシランカップリング剤 0.4%を常温で混合し、
さらに90〜95℃で混練冷却した後、粉砕して成形材料
(B)を製造した。
[Chemical 7] Orthocresol novolac type epoxy resin 8%, silica powder 74%, curing accelerator 0.3%, ester wax 0.3
% And silane coupling agent 0.4% at room temperature,
After further kneading and cooling at 90 to 95 ° C., the mixture was pulverized to produce a molding material (B).

【0022】比較例1 オルソクレゾールノボラック型エポキシ樹脂17%、ノボ
ラック型フェノール樹脂 8%、シリカ粉末74%、硬化促
進剤 0.3%、エステル系ワックス 0.3%およびシランカ
ップリング剤 0.4%を混合し、実施例1と同様にして成
形材料(C)を製造した。
Comparative Example 1 Orthocresol Novolak type epoxy resin 17%, novolac type phenol resin 8%, silica powder 74%, curing accelerator 0.3%, ester wax 0.3% and silane coupling agent 0.4% were mixed and carried out. A molding material (C) was produced in the same manner as in Example 1.

【0023】比較例2 エピビス型エポキシ樹脂(エポキシ当量 450)20%、ノ
ボラック型フェノール樹脂 5%、シリカ粉末74%、硬化
促進剤 0.3%、エステル系ワックス 0.3%およびシラン
カップリング剤 0.4%を混合し、実施例1と同様にして
成形材料(D)を製造した。
Comparative Example 2 20% epibis type epoxy resin (epoxy equivalent 450), 5% novolac type phenol resin, 74% silica powder, 0.3% curing accelerator, 0.3% ester wax and 0.4% silane coupling agent were mixed. Then, a molding material (D) was produced in the same manner as in Example 1.

【0024】こうして製造した成形材料(A)〜(D)
を用いて 170℃に加熱した金型内にトランスファー注入
し、硬化させて半導体素子を封止した半導体装置を製造
した。これらの半導体装置の諸特性を試験したのでその
結果を表1に示したが、本発明の封止用樹脂組成物およ
び半導体装置は耐湿性、半田耐熱性に優れており、本発
明の顕著な効果を確認することができた。
Molding materials (A) to (D) thus produced
Was used to transfer and inject into a mold heated to 170 ° C. and cured to manufacture a semiconductor device in which a semiconductor element was sealed. The characteristics of these semiconductor devices were tested, and the results are shown in Table 1. The encapsulating resin composition and the semiconductor device of the present invention are excellent in moisture resistance and solder heat resistance, and the remarkable features of the present invention. I was able to confirm the effect.

【0025】[0025]

【表1】 *1 :トランスファー成形によって直径50mm、厚さ 3mm
の成形品を作り、これを127℃, 2.5気圧の飽和水蒸気
中に24時間放置し、増加した重量によって測定した、 *2 :吸水率の場合と同様な成形品を作り、 175℃で 8
時間の後硬化を行い、適当な大きさの試験片とし、熱機
械分析装置を用いて測定した、 *3 :JIS−K−6911に準じて試験した、 *4 :成形材料を用いて、 2本以上のアルミニウム配線
を有するシリコン製チップを、通常の42アロイフレー
ムに接着し、 175℃で 2分間トランスファー成形した
後、 175℃, 8時間の後硬化を行った。こうして得た成
形品を予め、40℃,90%RH, 100時間の吸湿処理した
後、 250℃の半田浴に10秒間浸漬した。その後、 127
℃, 2.5気圧の飽和水蒸気中でプレッシャークッカーテ
ストを行い、アルミニウムの腐食による断線を不良とし
て評価した、 *5 : 8×8mm ダミーチップをQFP(14×14×1.4mm
)パッケージに納め、成形材料を用いて 175℃で 2分
間トランスファー成形した後、 175℃, 8時間の後硬化
を行った。こうして製造した半導体装置を85℃,85%,
24時間の吸湿処理をした後 240℃の半田浴に 1分間浸漬
した。その後、実体顕微鏡でパッケージ表面を観察し、
外部樹脂クラックの発生の有無を評価した。
[Table 1] * 1: Diameter 50 mm, thickness 3 mm by transfer molding
The molded product of Fig. 4 was left in saturated steam at 127 ° C and 2.5 atm for 24 hours and measured by the increased weight. * 2: A molded product similar to the case of water absorption was made and
After curing for a period of time, a test piece of an appropriate size was prepared and measured using a thermomechanical analyzer. * 3: Tested according to JIS-K-6911. * 4: Using molding material, 2 Silicon chips having at least two aluminum wirings were bonded to a normal 42 alloy frame, transfer molded at 175 ° C for 2 minutes, and then post-cured at 175 ° C for 8 hours. The molded product thus obtained was previously subjected to moisture absorption treatment at 40 ° C., 90% RH for 100 hours, and then immersed in a solder bath at 250 ° C. for 10 seconds. Then 127
A pressure cooker test was performed in saturated steam at 2.5 ° C at 2.5 ° C, and the disconnection due to corrosion of aluminum was evaluated as a failure. * 5: 8 × 8mm dummy chip was used for QFP (14 × 14 × 1.4mm).
) After packaging in a package and transfer molding using the molding material for 2 minutes at 175 ° C, post-curing was performed at 175 ° C for 8 hours. The semiconductor device manufactured in this way is
After absorbing moisture for 24 hours, it was immersed in a solder bath at 240 ° C for 1 minute. After that, observe the package surface with a stereomicroscope,
The occurrence of external resin cracks was evaluated.

【0026】[0026]

【発明の効果】以上の説明および表1から明らかなよう
に、本発明の封止用樹脂組成物および半導体封止装置
は、耐湿性、半田耐熱性に優れ、吸湿による影響が少な
く、電極の腐食による断線や水分によるリーク電流の発
生などを著しく低減することができ、しかも長期間にわ
たって信頼性を保証することができる。
As is clear from the above description and Table 1, the encapsulating resin composition and the semiconductor encapsulating device of the present invention are excellent in moisture resistance and solder heat resistance, less affected by moisture absorption, and less susceptible to electrode formation. It is possible to remarkably reduce disconnection due to corrosion and generation of leak current due to moisture, and moreover, reliability can be guaranteed for a long period of time.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/29 23/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 23/29 23/31

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 (A)次の式で示されるエポキシ樹脂 【化1】 (但し、式中nは 0又は 1以上の整数を表す)、 (B)環状テルペン骨格を有するフェノール樹脂および (C)無機質充填剤 を必須成分とし、前記(C)無機質充填剤を樹脂組成物
に対して25〜90重量%の割合で含有してなることを特徴
とする封止用樹脂組成物。
1. An epoxy resin represented by the following formula (A): (Wherein n represents 0 or an integer of 1 or more), (B) a phenol resin having a cyclic terpene skeleton and (C) an inorganic filler as essential components, and the (C) inorganic filler as a resin composition. The resin composition for encapsulation is characterized by being contained in a proportion of 25 to 90% by weight.
【請求項2】 (A)次の式で示されるエポキシ樹脂 【化2】 (但し、式中nは 0又は 1以上の整数を表す)、 (B)環状テルペン骨格を有するフェノール樹脂および (C)無機質充填剤 を必須成分とし、前記(C)無機質充填剤を樹脂組成物
に対して25〜90重量%の割合で含有した封止用樹脂組成
物の硬化物によって、半導体装置が封止されてなること
を特徴とする半導体封止装置。
2. An epoxy resin represented by the following formula (A): (Wherein n represents 0 or an integer of 1 or more), (B) a phenol resin having a cyclic terpene skeleton and (C) an inorganic filler as essential components, and the (C) inorganic filler as a resin composition. The semiconductor encapsulation device is characterized in that the semiconductor device is encapsulated with a cured product of the encapsulation resin composition contained in a proportion of 25 to 90% by weight.
JP19074591A 1991-07-04 1991-07-04 Sealing resin composition and semiconductor-sealing apparatus Pending JPH059265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19074591A JPH059265A (en) 1991-07-04 1991-07-04 Sealing resin composition and semiconductor-sealing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19074591A JPH059265A (en) 1991-07-04 1991-07-04 Sealing resin composition and semiconductor-sealing apparatus

Publications (1)

Publication Number Publication Date
JPH059265A true JPH059265A (en) 1993-01-19

Family

ID=16263048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19074591A Pending JPH059265A (en) 1991-07-04 1991-07-04 Sealing resin composition and semiconductor-sealing apparatus

Country Status (1)

Country Link
JP (1) JPH059265A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001131390A (en) * 1999-11-02 2001-05-15 Toray Ind Inc Epoxy resin composition for sealing semiconductor and semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001131390A (en) * 1999-11-02 2001-05-15 Toray Ind Inc Epoxy resin composition for sealing semiconductor and semiconductor device
JP4501188B2 (en) * 1999-11-02 2010-07-14 住友ベークライト株式会社 Epoxy resin composition for semiconductor encapsulation and semiconductor device

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