JPH0570562A - Resin composition for sealing and sealed semiconductor device - Google Patents
Resin composition for sealing and sealed semiconductor deviceInfo
- Publication number
- JPH0570562A JPH0570562A JP3258499A JP25849991A JPH0570562A JP H0570562 A JPH0570562 A JP H0570562A JP 3258499 A JP3258499 A JP 3258499A JP 25849991 A JP25849991 A JP 25849991A JP H0570562 A JPH0570562 A JP H0570562A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- epoxy resin
- semiconductor device
- inorganic filler
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、耐湿性、半田耐熱性に
優れた封止用樹脂組成物および半導体封止装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sealing resin composition having excellent moisture resistance and solder heat resistance, and a semiconductor sealing device.
【０００２】[0002]
【従来の技術】近年、半導体集積回路の分野において、
高集積化、高信頼性化の技術開発と同時に半導体装置の
実装工程の自動化が推進されている。例えばフラットパ
ッケージ型の半導体装置を回路基板に取り付ける場合
に、従来、リードピン毎に半田付けを行っていたが、最
近では半田浸漬方式や半田リフロー方式が採用されてい
る。2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as technology development for high integration and high reliability, automation of the mounting process of semiconductor devices is being promoted. For example, when mounting a flat package type semiconductor device on a circuit board, soldering has been conventionally performed for each lead pin, but recently, a solder dipping method or a solder reflow method has been adopted.
【０００３】[0003]
【発明が解決しようとする課題】従来の、ノボラック型
エポキシ樹脂などのエポキシ樹脂、ノボラック型フェノ
ール樹脂およびシリカ粉末からなる樹脂組成物によって
封止した半導体装置は、装置全体の半田浴浸漬を行うと
耐湿性が低下するという欠点があった。特に吸湿した半
導体装置を浸漬すると、封止樹脂と半導体チップあるい
は封止樹脂とリードフレームとの間の剥がれや、内部樹
脂クラックが生じて著しい耐湿性劣化を起こし、電極の
腐食による断線や水分によるリーク電流を生じ、その結
果、半導体装置は、長期間の信頼性を保証することがで
きないという欠点があった。A conventional semiconductor device sealed with a resin composition comprising an epoxy resin such as a novolac type epoxy resin, a novolac type phenolic resin, and silica powder is subjected to solder bath dipping of the entire device. There is a drawback that the moisture resistance is lowered. In particular, when a semiconductor device that has absorbed moisture is immersed, peeling between the encapsulating resin and the semiconductor chip or between the encapsulating resin and the lead frame causes internal resin cracking, resulting in significant deterioration in moisture resistance. A leak current is generated, and as a result, the semiconductor device has a drawback that it cannot guarantee long-term reliability.
【０００４】本発明は、上記の欠点を解消するためにな
されたもので、吸湿の影響が少なく、特に半田浴浸漬後
の耐湿性、半田耐熱性に優れ、封止樹脂と半導体チップ
あるいは封止樹脂とリードフレームとの剥がれや内部樹
脂クラックの発生がなく、また電極の腐食による断線や
水分によるリーク電流の発生もなく、長期信頼性を保証
できる封止用樹脂組成物および半導体封止装置を提供し
ようとするものである。The present invention has been made in order to solve the above-mentioned drawbacks, has little influence of moisture absorption, is particularly excellent in moisture resistance and solder heat resistance after immersion in a solder bath, and has a sealing resin and a semiconductor chip or sealing. A resin composition for encapsulation and a semiconductor encapsulation device capable of ensuring long-term reliability without peeling of the resin from the lead frame or generation of internal resin cracks, and without occurrence of wire breakage due to electrode corrosion or leakage current due to moisture. It is the one we are trying to provide.
【０００５】[0005]
【課題を解決するための手段】本発明者らは、上記の目
的を達成しようと鋭意研究を重ねた結果、特定のエポキ
シ樹脂、特定のフッ素原子を含む化合物又は重合体を硬
化剤として用いることによって、耐湿性、半田耐熱性に
優れた樹脂組成物が得られることを見いだし、本発明を
完成したものである。Means for Solving the Problems As a result of intensive studies aimed at achieving the above object, the present inventors have found that a specific epoxy resin, a compound containing a specific fluorine atom or a polymer is used as a curing agent. It was found that a resin composition having excellent moisture resistance and solder heat resistance can be obtained by the above, and the present invention has been completed.
【０００６】すなわち、本発明は、（Ａ）次の式で示さ
れるエポキシ樹脂、That is, the present invention provides (A) an epoxy resin represented by the following formula:
【０００７】[0007]
【化３】 （但し、式中ｎは 0又は 1以上の整数を表す）、（Ｂ）
複数のビス（トリフルオロメチル）ヒドロキシメチル基
で置換した化合物又は重合体、および（Ｃ）無機質充填
剤を必須成分とし、前記（Ｃ）無機質充填剤を樹脂組成
物に対して25〜90重量％の割合で含有してなることを特
徴とする封止用樹脂組成物である。また、この封止用樹
脂組成物の硬化物によって、半導体装置が封止されてな
ることを特徴とする半導体封止装置である。[Chemical 3] (However, in the formula, n represents 0 or an integer of 1 or more), (B)
A compound or polymer substituted with a plurality of bis (trifluoromethyl) hydroxymethyl groups and (C) an inorganic filler as an essential component, and the (C) inorganic filler is 25 to 90% by weight with respect to the resin composition. The resin composition for encapsulation is characterized in that it is contained at a ratio of. A semiconductor encapsulation device is obtained by encapsulating a semiconductor device with a cured product of this encapsulating resin composition.
【０００８】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【０００９】本発明に用いる（Ａ）エポキシ樹脂として
は、前記の式で示されるものが使用され、その分子量等
に制限されることなく使用することができる。例えばAs the epoxy resin (A) used in the present invention, the one represented by the above formula is used, and the epoxy resin can be used without being restricted by its molecular weight and the like. For example
【００１０】[0010]
【化４】 が挙げられる。また、このエポキシ樹脂には、ノボラッ
ク系エポキシ樹脂やエピビス系エポキシ樹脂を併用する
ことができる。[Chemical 4] Is mentioned. In addition, a novolac-based epoxy resin or an epibis-based epoxy resin can be used in combination with this epoxy resin.
【００１１】本発明に用いる（Ｂ）複数のビス（トリフ
ルオロメチル）ヒドロキシメチル基で置換した化合物又
は重合体としては、次式で示されるような骨格構造を有
するものが挙げられ、その分子構造、分子量などに特に
制限されることはない。Examples of the compound (B) substituted with a plurality of bis (trifluoromethyl) hydroxymethyl groups (B) used in the present invention include those having a skeleton structure represented by the following formula. The molecular weight is not particularly limited.
【００１２】[0012]
【化５】 （但し、式中ｎは0 又は1 以上の整数を表す） また、この（Ｂ）成分には、フェノール、アルキルフェ
ノール等のフェノール類とホルムアルデヒドあるいはパ
ラホルムアルデヒドとを反応させて得られるノボラック
型フェノール樹脂およびこれらの変性樹脂を混合して使
用することができる。[Chemical 5] (In the formula, n represents 0 or an integer of 1 or more.) The component (B) is a novolac type phenol resin obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde, and These modified resins can be mixed and used.
【００１３】本発明に用いる（Ｃ）無機質充填剤として
は、一般に使用されているものが広く使用されるが、そ
れらの中でも不純物濃度が低く、平均粒径30μｍ以下の
シリカ粉末が好ましく使用される。平均粒径が30μｍを
超えると耐湿性および成形性が劣り好ましくない。無機
質充填剤の配合割合は、全体の樹脂組成物に対して50〜
90重量％含有することが好ましい。その割合が50重量％
未満では樹脂組成物の吸湿性が高く、半田浸漬後の耐湿
性に劣り、また90重量％を超えると極端に流動性が悪く
なり成形性に劣り好ましくない。As the inorganic filler (C) used in the present invention, those generally used are widely used. Among them, silica powder having a low impurity concentration and an average particle diameter of 30 μm or less is preferably used. .. If the average particle size exceeds 30 μm, the moisture resistance and the moldability are deteriorated, which is not preferable. The blending ratio of the inorganic filler is 50 to the whole resin composition.
It is preferable to contain 90% by weight. 50% by weight
If it is less than 100% by weight, the resin composition has a high hygroscopicity and is poor in moisture resistance after solder immersion, and if it exceeds 90% by weight, the fluidity is extremely poor and the moldability is poor, which is not preferable.
【００１４】本発明の封止用樹脂組成物は、前述した特
定のエポキシ樹脂、フッ素原子を含む特定の化合物又は
重合体、および無機質充填剤を必須成分とするが、本発
明の目的に反しない限度において、また必要に応じて、
例えば天然ワックス類、合成ワックス類、直鎖脂肪酸の
金属塩、酸アミド、エステル類、パラフィンなどの離型
剤、三酸化アンチモンなどの難燃剤、カーボンブラック
などの着色剤、シランカップリング剤、種々の硬化促進
剤、ゴム系やシリコーン系の低応力付与剤等を適宜添加
・配合することができる。The encapsulating resin composition of the present invention contains the above-mentioned specific epoxy resin, a specific compound or polymer containing a fluorine atom, and an inorganic filler as essential components, but it is not against the object of the present invention. At the limit and as needed
For example, natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters, release agents such as paraffin, flame retardants such as antimony trioxide, colorants such as carbon black, silane coupling agents, various A curing accelerator, a rubber-based or silicone-based low-stress imparting agent, and the like can be appropriately added and mixed.
【００１５】本発明の封止用樹脂組成物を成形材料とし
て調製する場合の一般的方法は、前述した特定のエポキ
シ樹脂、フッ素原子を含む特定の化合物又は重合体およ
び無機質充填剤その他を配合し、ミキサー等によって十
分均一に混合した後、さらに熱ロールによる溶融混合処
理又はニーダ等による混合処理を行い、次いで冷却固化
させ適当な大きさに粉砕して成形材料とすることができ
る。また、この成形材料を用いて半導体素子をセットし
た金型内にトランスファー注入して硬化させて本発明の
半導体封止装置を製造することができる。成形材料は半
導体素子の封止の他に電子部品、あるいは電気部品の封
止または被覆・絶縁等にも使用することができ、それら
に優れた特性を付与することができる。The general method for preparing the encapsulating resin composition of the present invention as a molding material is to add the above-mentioned specific epoxy resin, a specific compound or polymer containing a fluorine atom and an inorganic filler. After sufficiently uniform mixing with a mixer or the like, melt mixing treatment with a hot roll or mixing treatment with a kneader or the like is further performed, followed by cooling and solidifying and pulverizing to an appropriate size to obtain a molding material. In addition, the semiconductor encapsulation device of the present invention can be manufactured by transfer-injecting into a mold in which a semiconductor element is set using this molding material and curing it. The molding material can be used not only for sealing semiconductor elements but also for sealing or covering / insulating electronic parts or electric parts, and can impart excellent properties to them.
【００１６】[0016]
【作用】本発明の封止用樹脂組成物は、特定のエポキシ
樹脂とフッ素原子を含む特定の化合物又は重合体を硬化
剤として用いることによって、樹脂組成物のガラス転移
温度が上昇し、熱機械的特性と低応力性が向上するとと
もに、特に耐湿性が優れていて、半田浸漬、半田リフロ
ー後の樹脂クラックの発生など半導体装置の耐湿性劣化
が少なくなるものである。In the encapsulating resin composition of the present invention, the glass transition temperature of the resin composition is increased by using a specific epoxy resin and a specific compound or polymer containing a fluorine atom as a curing agent, and In addition to improving the static characteristics and low stress, the moisture resistance is particularly excellent, and the deterioration of the moisture resistance of the semiconductor device, such as the occurrence of resin cracks after solder dipping and solder reflow, is reduced.
【００１７】[0017]
【実施例】次に本発明の実施例について説明するが、本
発明は以下の実施例に限定されるものではない。以下の
実施例および比較例において「％」とは「重量％」を意
味する。EXAMPLES Examples of the present invention will be described below, but the present invention is not limited to the following examples. In the following examples and comparative examples, “%” means “% by weight”.
【００１８】実施例１ 前述した特定のエポキシ樹脂17％、次式に示したフッ素
原子を含む化合物10％、Example 1 17% of the above-mentioned specific epoxy resin, 10% of a compound containing a fluorine atom represented by the following formula:
【００１９】[0019]
【化６】 シリカ粉末72％、硬化促進剤 0.3％、エステルワックス
0.3％およびシランカップリング剤 0.4％を常温で混合
し、さらに90〜95℃で混練冷却した後、粉砕して成形材
料（Ａ）を製造した。[Chemical 6] 72% silica powder, 0.3% hardening accelerator, ester wax
0.3% and a silane coupling agent 0.4% were mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to produce a molding material (A).
【００２０】実施例２ 実施例１で用いたエポキシ樹脂 9％、化６に示したフッ
素原子を含む化合物 8％、オルソクレゾールノボラック
型エポキシ樹脂8 ％、シリカ粉末74％、硬化促進剤0.3
％、エステルワックス0.3 ％およびシランカップリング
剤0.4 ％、を常温で混合し、さらに90〜95℃で混練冷却
した後、粉砕して成形材料（Ｂ）を製造した。Example 2 9% of the epoxy resin used in Example 1, 8% of the compound containing a fluorine atom shown in Chemical formula 6, 8% of orthocresol novolac type epoxy resin, 74% of silica powder, 0.3% of a curing accelerator.
%, Ester wax 0.3% and silane coupling agent 0.4% were mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to produce a molding material (B).
【００２１】比較例１ オルソクレゾールノボラック型エポキシ樹脂17％、ノボ
ラック型フェノール樹脂 8％、シリカ粉末74％、硬化促
進剤 0.3％、エステル系ワックス 0.3％およびシランカ
ップリング剤 0.4％を混合し、実施例１と同様にして成
形材料（Ｃ）を製造した。Comparative Example 1 Orthocresol Novolak type epoxy resin 17%, novolac type phenol resin 8%, silica powder 74%, curing accelerator 0.3%, ester wax 0.3% and silane coupling agent 0.4% were mixed and carried out. A molding material (C) was produced in the same manner as in Example 1.
【００２２】比較例２ エピビス型エポキシ樹脂（エポキシ当量 450）20％、ノ
ボラック型フェノール樹脂 5％、シリカ粉末74％、硬化
促進剤 0.3％、エステル系ワックス 0.3％およびシラン
カップリング剤 0.4％を混合し、実施例１と同様にして
成形材料（Ｄ）を製造した。Comparative Example 2 20% epibis type epoxy resin (epoxy equivalent 450), 5% novolac type phenol resin, 74% silica powder, 0.3% curing accelerator, 0.3% ester wax and 0.4% silane coupling agent were mixed. Then, a molding material (D) was produced in the same manner as in Example 1.
【００２３】こうして製造した成形材料（Ａ）〜（Ｄ）
を用いて 170℃に加熱した金型内にトランスファー注入
し、硬化させて半導体素子を封止した半導体装置を製造
した。これらの半導体装置の諸特性を試験したのでその
結果を表１に示したが、本発明の封止用樹脂組成物およ
び半導体装置は耐湿性、半田耐熱性に優れており、本発
明の顕著な効果を確認することができた。Molding materials (A) to (D) produced in this way
Was used to transfer and inject into a mold heated to 170 ° C. and cured to manufacture a semiconductor device in which a semiconductor element was sealed. The characteristics of these semiconductor devices were tested, and the results are shown in Table 1. The encapsulating resin composition and the semiconductor device of the present invention are excellent in moisture resistance and solder heat resistance, and the remarkable features of the present invention are shown. I was able to confirm the effect.
【００２４】[0024]
【表１】 ＊1 ：トランスファー成形によって直径50ｍｍ、厚さ 3
ｍｍの成形品を作り、これを 127℃， 2.5気圧の飽和水
蒸気中に24時間放置し、増加した重量によって測定し
た、 ＊2 ：吸水率の場合と同様な成形品を作り、 175℃で 8
時間の後硬化を行い、適当な大きさの試験片とし、熱機
械分析装置を用いて測定した、 ＊3 ：ＪＩＳ−Ｋ−６９１１に準じて試験した、 ＊4 ：成形材料を用いて、 2本以上のアルミニウム配線
を有するシリコン製チップを、通常の４２アロイフレー
ムに接着し、 175℃で 2分間トランスファー成形した
後、 175℃， 8時間の後硬化を行った。こうして得た成
形品を予め、40℃，90％ＲＨ， 100時間の吸湿処理した
後、 250℃の半田浴に10秒間浸漬した。その後、 127
℃， 2.5気圧の飽和水蒸気中でプレッシャークッカーテ
ストを行い、アルミニウムの腐食による断線を不良とし
て評価した、 ＊5 ： 8×8 ｍｍダミーチップをＱＦＰ（14×14×1.4
ｍｍ）パッケージに納め、成形材料を用いて 175℃で 2
分間トランスファー成形した後、 175℃， 8時間の後硬
化を行った。こうして製造した半導体装置を85℃，85
％，24時間の吸湿処理をした後 240℃の半田浴に 1分間
浸漬した。その後、実体顕微鏡でパッケージ表面を観察
し、外部樹脂クラックの発生の有無を評価した。[Table 1] * 1: Diameter 50 mm and thickness 3 by transfer molding
mm, molded product was left in saturated steam at 127 ° C and 2.5 atm for 24 hours, and measured by the increased weight. * 2: A molded product similar to the case of water absorption was made, and it was stored at 175 ° C for 8 hours.
After curing for a period of time, a test piece of an appropriate size was prepared and measured using a thermomechanical analyzer. * 3: Tested according to JIS-K-6911. * 4: Using molding material, 2 A silicon chip having at least one aluminum wiring was bonded to a normal 42 alloy frame, transfer molded at 175 ° C for 2 minutes, and then post-cured at 175 ° C for 8 hours. The molded product thus obtained was previously subjected to moisture absorption treatment at 40 ° C., 90% RH for 100 hours, and then immersed in a solder bath at 250 ° C. for 10 seconds. Then 127
A pressure cooker test was performed in saturated steam at 2.5 ° C at 2.5 ° C, and the disconnection due to corrosion of aluminum was evaluated as a failure. * 5: An 8x8 mm dummy chip was tested using QFP (14x14x1.4).
mm) Package and use molding compound at 175 ° C for 2
After transfer molding for 1 minute, post-curing was performed at 175 ° C for 8 hours. The semiconductor device manufactured in this way is
% For 24 hours and then immersed in a solder bath at 240 ° C for 1 minute. Then, the package surface was observed with a stereoscopic microscope to evaluate the presence or absence of external resin cracks.
【００２５】[0025]
【発明の効果】以上の説明および表１から明らかなよう
に、本発明の封止用樹脂組成物および半導体封止装置
は、耐湿性、半田耐熱性に優れ、吸湿による影響が少な
く、電極の腐食による断線や水分によるリーク電流の発
生などを著しく低減することができ、しかも長期間にわ
たって信頼性を保証することができる。As is clear from the above description and Table 1, the encapsulating resin composition and the semiconductor encapsulating device of the present invention are excellent in moisture resistance and solder heat resistance, less affected by moisture absorption, and less susceptible to electrode formation. It is possible to remarkably reduce disconnection due to corrosion and generation of leak current due to moisture, and moreover, reliability can be guaranteed for a long period of time.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 23/31
Claims (2)
チル基で置換した化合物又は重合体、および （Ｃ）無機質充填剤 を必須成分とし、前記（Ｃ）無機質充填剤を樹脂組成物
に対して25〜90重量％の割合で含有してなることを特徴
とする封止用樹脂組成物。1. An epoxy resin represented by the following formula (A): (Wherein n represents 0 or an integer of 1 or more), (B) a compound or polymer substituted with a plurality of bis (trifluoromethyl) hydroxymethyl groups, and (C) an inorganic filler as an essential component. A resin composition for encapsulation, comprising the inorganic filler (C) in a proportion of 25 to 90% by weight based on the resin composition.
チル基で置換した化合物又は重合体、および （Ｃ）無機質充填剤 を必須成分とし、前記（Ｃ）無機質充填剤を樹脂組成物
に対して25〜90重量％の割合に含有した封止用樹脂組成
物の硬化物によって、半導体装置が封止されてなること
を特徴とする半導体封止装置。2. An epoxy resin represented by the following formula (A): (Wherein n represents 0 or an integer of 1 or more), (B) a compound or polymer substituted with a plurality of bis (trifluoromethyl) hydroxymethyl groups, and (C) an inorganic filler as an essential component. A semiconductor device is encapsulated by a cured product of a resin composition for encapsulation containing the inorganic filler (C) in a proportion of 25 to 90% by weight with respect to the resin composition. Sealing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3258499A JPH0570562A (en) | 1991-09-10 | 1991-09-10 | Resin composition for sealing and sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3258499A JPH0570562A (en) | 1991-09-10 | 1991-09-10 | Resin composition for sealing and sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0570562A true JPH0570562A (en) | 1993-03-23 |
Family
ID=17321060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3258499A Pending JPH0570562A (en) | 1991-09-10 | 1991-09-10 | Resin composition for sealing and sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0570562A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006045523A (en) * | 2004-06-28 | 2006-02-16 | Canon Inc | Cationic photopolymerizable epoxy resin composition, fine structure member produced by using the same and method for producing fine structure member |
| US7332557B2 (en) * | 2001-06-27 | 2008-02-19 | Tohto Kasei Co., Ltd. | Epoxy resin, epoxy resin composition thereof and cured product thereof |
| WO2024071234A1 (en) * | 2022-09-29 | 2024-04-04 | 富士フイルム株式会社 | Curable composition, cured product, production method for cured product, semiconductor package, and production method for semiconductor package |
-
1991
- 1991-09-10 JP JP3258499A patent/JPH0570562A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7332557B2 (en) * | 2001-06-27 | 2008-02-19 | Tohto Kasei Co., Ltd. | Epoxy resin, epoxy resin composition thereof and cured product thereof |
| JP2006045523A (en) * | 2004-06-28 | 2006-02-16 | Canon Inc | Cationic photopolymerizable epoxy resin composition, fine structure member produced by using the same and method for producing fine structure member |
| JP4498232B2 (en) * | 2004-06-28 | 2010-07-07 | キヤノン株式会社 | Photocationic polymerizable epoxy resin composition, method for producing microstructure using the same, and method for producing inkjet head |
| WO2024071234A1 (en) * | 2022-09-29 | 2024-04-04 | 富士フイルム株式会社 | Curable composition, cured product, production method for cured product, semiconductor package, and production method for semiconductor package |
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