JPH0656573A - Liquid phase epitaxial growth device - Google Patents
Liquid phase epitaxial growth deviceInfo
- Publication number
- JPH0656573A JPH0656573A JP23133992A JP23133992A JPH0656573A JP H0656573 A JPH0656573 A JP H0656573A JP 23133992 A JP23133992 A JP 23133992A JP 23133992 A JP23133992 A JP 23133992A JP H0656573 A JPH0656573 A JP H0656573A
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- doors
- furnace core
- single crystal
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は下地基板の表面に単結晶
膜を育成する液相エピタキシャル成長装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid phase epitaxial growth apparatus for growing a single crystal film on the surface of a base substrate.
【０００２】[0002]
【従来の技術】従来、遅延線フィルター，発振器，非線
形デバイスなどの静磁波（ＭＳＷ）デバイス、およびフ
ァラデー回転効果を利用した光アイソレータ，サーキュ
レータまたはスイッチなどの磁気光学素子等に磁性ガー
ネット単結晶が広く用いられている。この磁性ガーネッ
ト単結晶の主な製造方法として、液相エピタキシャル成
長法（ＬＰＥ法）が知られている。2. Description of the Related Art Conventionally, magnetic garnet single crystals have been widely used for magnetostatic wave (MSW) devices such as delay line filters, oscillators, non-linear devices, and magneto-optical elements such as optical isolators, circulators or switches utilizing the Faraday rotation effect. It is used. A liquid phase epitaxial growth method (LPE method) is known as a main method for producing the magnetic garnet single crystal.
【０００３】この液相エピタキシャル成長法は、縦型加
熱炉内に所定条件に保持された白金製坩堝に、ガーネッ
トを構成する元素の酸化物および溶剤としてＰｂＯとＢ
2 Ｏ3 とを充填し、約１２００℃で均質化を行い溶液化
する。この溶液を液相線（Liquidus) と固相線 (Solidu
s)の間の温度、即ち約９００℃前後の一定温度に保持し
てガーネットを過飽和状態にした後、この溶液中に下地
基板であるＧｄ3 Ｇａ5 Ｏ12（ＧＧＧ）基板を浸漬し、
一定位置で回転させながら所定時間成長を行うことによ
り、下地基板の表面に磁性ガーネット単結晶膜を育成す
る。最後に、溶液の上方で下地基板を約５００ｒｐｍの
回転数で回転させることによって、磁性ガーネット単結
晶膜上に付着している溶液を振り切るというものであ
る。上記下地基板は、支持棒の下端部に取り付けられた
基板保持具によって水平状態に保持されている。According to this liquid phase epitaxial growth method, a platinum crucible held in a vertical heating furnace under predetermined conditions contains an oxide of elements constituting garnet and PbO and B as a solvent.
Fill with 2 O 3 and homogenize at about 1200 ° C. to form a solution. This solution is applied to the liquidus (Liquidus) and solidus (Solidus)
s), that is, after maintaining the garnet at a constant temperature of about 900 ° C. to make the garnet supersaturated, a Gd 3 Ga 5 O 12 (GGG) substrate as a base substrate is immersed in this solution,
The magnetic garnet single crystal film is grown on the surface of the base substrate by performing growth for a predetermined time while rotating at a fixed position. Finally, the underlying substrate is rotated above the solution at a rotation speed of about 500 rpm to shake off the solution adhering to the magnetic garnet single crystal film. The base substrate is held horizontally by a substrate holder attached to the lower end of the support rod.
【０００４】[0004]
【発明が解決しようとする課題】従来の場合、溶液が過
冷却状態に保持された後、下地基板を保持した保持具を
一定速度で徐々に降下させ、溶液中にこれを浸漬し、エ
ピタキシャル成長を開始する。基板保持具を降下させる
に当たって、下地基板は水平に保持されているため、溶
液中から蒸発するＰｂＯなどの蒸気に直接さらされるこ
とになる。このような状態においては、超清浄な雰囲気
において鏡面加工処理がなされている下地基板がＰｂＯ
蒸気にさらされ、ＰｂＯ等を主成分とする析出物が下地
基板上に析出し堆積する。このような下地基板を溶液中
に浸漬しエピタキシャル成長を行っても、そのＰｂＯを
主成分とする析出物が結晶学的欠陥の原因となり、良質
な単結晶膜が得られないという問題があった。In the conventional case, after the solution is kept in a supercooled state, the holder holding the underlying substrate is gradually lowered at a constant speed and immersed in the solution to allow epitaxial growth. Start. When lowering the substrate holder, since the underlying substrate is held horizontally, it is directly exposed to vapor such as PbO vaporized from the solution. In such a state, the base substrate, which has been subjected to the mirror surface processing in the ultra-clean atmosphere, is PbO.
When exposed to steam, a precipitate containing PbO or the like as a main component is deposited and deposited on the underlying substrate. Even when such an underlying substrate is dipped in a solution and epitaxially grown, the precipitate containing PbO as a main component causes crystallographic defects, and there is a problem that a good-quality single crystal film cannot be obtained.
【０００５】また、溶液より温度の低い下地基板をいき
なり溶液に浸漬すると、良質な単結晶膜が得られないと
いう経験的事実から、実際には下地基板は炉外から溶液
直上まで徐々に降下させた後、その位置において一定回
転速度で回転させ、下地基板を予熱し、溶液との温度差
をできるだけなくす工程が取り入れられている。その
際、数分から数十分の間、溶液直上で下地基板が回転さ
れながら保持されることになり、下地基板がＰｂＯ蒸気
にさらされる時間が長くなって、ＰｂＯ等を主成分とす
る析出物が下地基板に一層付着しやすくなる。そこで、
本発明の目的は、下地基板が溶剤の蒸気に直接さらされ
ることなく十分に予熱工程を行い、良質な単結晶膜を得
ることができる液相エピタキシャル成長装置を提供する
ことにある。Also, from the empirical fact that a good-quality single crystal film cannot be obtained if a base substrate whose temperature is lower than that of the solution is suddenly immersed in the solution, the base substrate is actually gradually lowered from outside the furnace to directly above the solution. After that, the step of rotating at a constant rotation speed at that position to preheat the base substrate to eliminate the temperature difference from the solution as much as possible is introduced. At that time, the base substrate is held for a few minutes to several tens of minutes while being rotated immediately above the solution, and the time period during which the base substrate is exposed to PbO vapor is prolonged, so that the precipitate containing PbO or the like as a main component is deposited. Are more likely to adhere to the base substrate. Therefore,
An object of the present invention is to provide a liquid phase epitaxial growth apparatus capable of sufficiently performing a preheating step without directly exposing a base substrate to the vapor of a solvent to obtain a good quality single crystal film.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、坩堝の直上に、炉心管を上下に仕切可能
な扉を水平方向に移動可能に設けたものである。In order to achieve the above object, the present invention provides a door, which is vertically movable and is capable of partitioning a core tube vertically, just above a crucible.
【０００７】[0007]
【作用】下地基板を炉心管内に降下させ、溶液直上で予
熱する際、溶液から立ちのぼる溶剤の蒸気によって下地
基板が汚染される恐れがあるが、この時には扉によって
炉心管を仕切り、溶剤蒸気が下地基板に触れないように
する。したがって、下地基板は扉より上方に配置された
ヒータにより炉心管を介して予熱される。予熱が終了す
れば扉を開き、素早く下地基板を溶液に浸漬し、エピタ
キシャル成長を行う。浸漬段階において、下地基板は溶
剤蒸気によって汚染されていないので、良質の単結晶を
育成できる。[Function] When the base substrate is lowered into the core tube and preheated immediately above the solution, the base substrate may be contaminated by the solvent vapor rising from the solution. At this time, the door separates the core tube and the solvent vapor Avoid touching the board. Therefore, the base substrate is preheated via the core tube by the heater arranged above the door. When preheating is completed, the door is opened and the underlying substrate is quickly immersed in the solution for epitaxial growth. In the immersion step, the base substrate is not contaminated by the solvent vapor, so that a good quality single crystal can be grown.
【０００８】[0008]
【実施例】図１，図２は本発明の一例である磁性ガーネ
ット膜の育成装置を示す。アルミナ製の縦型円筒状炉心
管は上下に二分割されており、両炉心管１，２の間には
白金または白金合金製の一対の扉３ａ，３ｂが左右方向
から摺動自在に挿入され、引手棒４ａ，４ｂによって自
由に開閉可能となっている。上記扉３ａ，３ｂはその直
径が炉心管１，２より大きな半円形状をしている。1 and 2 show an apparatus for growing a magnetic garnet film which is an example of the present invention. The vertical cylindrical core tube made of alumina is vertically divided into two parts. A pair of doors 3a, 3b made of platinum or platinum alloy is slidably inserted between the core tubes 1 and 2 from the left and right directions. The pull bar 4a, 4b can be freely opened and closed. The doors 3a and 3b have a semicircular shape whose diameter is larger than that of the core tubes 1 and 2.
【０００９】下側の炉心管２の内側には、支持台６によ
って底面が支持された白金製坩堝７が配置され、この坩
堝７内には磁性ガーネット膜の原料と溶剤とが充填され
ている。上側の炉心管１の外側には上下２段のヒータ
８，９が配置され、下側の炉心管２の外側にも上下２段
のヒータ１０，１１が配置されている。炉心管２内の坩
堝７は上記ヒータ１０，１１の輻射熱により加熱され、
ガーネット原料および溶剤が溶解されて溶液１２化され
る。A platinum crucible 7 having a bottom surface supported by a support 6 is disposed inside the lower core tube 2, and the crucible 7 is filled with a raw material for a magnetic garnet film and a solvent. . Upper and lower heaters 8 and 9 are arranged outside the upper core tube 1, and upper and lower heaters 10 and 11 are also arranged outside the lower core tube 2. The crucible 7 in the core tube 2 is heated by the radiant heat of the heaters 10 and 11,
The garnet raw material and the solvent are dissolved to form a solution 12.
【００１０】上側の炉心管１の内部には、ＧＧＧ基板よ
りなる円板状下地基板１３を水平保持した白金製または
白金合金製の基板保持具１４が配置され、この基板保持
具１４はアルミナ製支持棒１５の下端部に固定されてい
る。下地基板１３はヒータ８，９によって加熱された炉
心管１の雰囲気中に配置され、所定温度に保たれてい
る。A substrate holder 14 made of platinum or a platinum alloy for horizontally holding a disk-shaped base substrate 13 made of a GGG substrate is arranged inside the upper core tube 1, and the substrate holder 14 is made of alumina. It is fixed to the lower end of the support rod 15. The base substrate 13 is placed in the atmosphere of the furnace tube 1 heated by the heaters 8 and 9 and kept at a predetermined temperature.
【００１１】上記支持棒１５の上端部は駆動装置（図示
せず）に取り付けられており、回転方向および上下方向
に駆動される。上側の炉心管１の上端には、炉内への冷
気の侵入を抑制する石英ガラス製のシャッタ１６が載置
されており、このシャッタ１６の中心部に上記支持棒１
５が挿通されている。また、下側の炉心管２の下端部に
は排気口１７が設けられ、溶液１２から蒸発するＰｂＯ
蒸気を図１の矢印で示す方向に排気している。The upper end of the support rod 15 is attached to a driving device (not shown) and is driven in the rotating direction and the vertical direction. A shutter 16 made of quartz glass is mounted on the upper end of the upper core tube 1 to prevent cold air from entering the furnace, and the support rod 1 is provided at the center of the shutter 16.
5 is inserted. Further, an exhaust port 17 is provided at the lower end portion of the lower core tube 2 so as to evaporate PbO from the solution 12.
The steam is exhausted in the direction shown by the arrow in FIG.
【００１２】次に、上記構成の液相エピタキシャル成長
装置の動作の一例を説明する。まず、扉３ａ，３ｂを閉
じて上下の炉心管１，２の間を仕切った状態とする。そ
して、坩堝７の中でガーネット原料と溶剤とを混合し、
１２００℃で加熱溶解して２時間保持した後、約９００
℃に降温して過冷却状態とする。一方、下地基板１３を
保持した基板保持具１４を上側の炉心管１内に降下さ
せ、扉３ａ，３ｂの直上で停止させ、ヒータ９によって
溶液１２とほぼ同一の温度となるように予熱する。この
時、溶液１２からＰｂＯ蒸気が発生するが、この蒸気は
炉心管２の下部に設けた排気口１７から排出されるの
で、下地基板１３がＰｂＯ蒸気によって汚染される心配
がない。一定時間、下地基板１３を予熱した後、左右の
扉３ａ，３ｂを少なくとも下地基板１３の直径以上に開
き、上下の炉心管１，２を連通させる。そして、支持棒
１５を一方向または正逆に回転させながら素早く降下さ
せ、下地基板１３を溶液１２中に浸漬し、磁性ガーネッ
ト単結晶膜を数時間等温育成する。単結晶膜の育成が終
了した後、下地基板１３を溶液１２から高速度で回転さ
せながら引き上げ、単結晶膜上の付着溶液を遠心力によ
り振り切る。付着溶液の振り切りを終了した後、支持棒
１５を引き上げて下地基板１３を扉３ａ，３ｂの位置よ
り上方まで上昇させ、扉３ａ，３ｂを閉じる。そして、
下地基板１３に熱的応力がかからないよう徐冷するが、
この冷却過程においても扉３ａ，３ｂが閉じられている
ので、ＰｂＯ蒸気が単結晶膜表面に付着するのを防止で
き、良質な単結晶膜を得ることができる。Next, an example of the operation of the liquid phase epitaxial growth apparatus having the above structure will be described. First, the doors 3a and 3b are closed to partition the upper and lower core tubes 1 and 2. Then, the garnet raw material and the solvent are mixed in the crucible 7,
About 900 after heating and melting at 1200 ℃ for 2 hours
The temperature is lowered to ℃ and brought to a supercooled state. On the other hand, the substrate holder 14 holding the base substrate 13 is lowered into the upper core tube 1, stopped immediately above the doors 3a and 3b, and preheated by the heater 9 so that the temperature becomes almost the same as that of the solution 12. At this time, PbO vapor is generated from the solution 12, but since this vapor is exhausted from the exhaust port 17 provided in the lower portion of the furnace core tube 2, there is no concern that the base substrate 13 is contaminated by the PbO vapor. After preheating the base substrate 13 for a certain period of time, the left and right doors 3a and 3b are opened to at least the diameter of the base substrate 13 and the upper and lower core tubes 1 and 2 are communicated with each other. Then, the support rod 15 is quickly lowered while rotating in one direction or forward and backward, the base substrate 13 is immersed in the solution 12, and the magnetic garnet single crystal film is grown isothermally for several hours. After the growth of the single crystal film is completed, the base substrate 13 is pulled up from the solution 12 while being rotated at a high speed, and the adhering solution on the single crystal film is shaken off by the centrifugal force. After the shaking off of the attached solution is completed, the support bar 15 is pulled up to raise the base substrate 13 to a position higher than the positions of the doors 3a and 3b, and the doors 3a and 3b are closed. And
The base substrate 13 is gradually cooled so that thermal stress is not applied,
Since the doors 3a and 3b are closed even in this cooling process, it is possible to prevent the PbO vapor from adhering to the surface of the single crystal film and obtain a good quality single crystal film.
【００１３】図３，図４は本発明の第２実施例を示し、
第１実施例と同一部品には同一符号を付して説明を省略
する。この実施例では、白金または白金合金製の１枚の
扉１８が炉心管１，２の間に横方向から摺動自在に挿入
され、引手棒１９によって自由に開閉可能となってい
る。扉１８には炉心管１，２の内径とほぼ等しい直径の
開口穴１８ａが形成され、扉１８と炉心管１，２との隙
間にはシール部材５が設けられている。3 and 4 show a second embodiment of the present invention,
The same parts as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. In this embodiment, a single door 18 made of platinum or platinum alloy is slidably inserted laterally between the core tubes 1 and 2, and can be freely opened and closed by a pull bar 19. The door 18 is formed with an opening hole 18a having a diameter substantially equal to the inner diameters of the core tubes 1 and 2, and a seal member 5 is provided in the gap between the door 18 and the core tubes 1 and 2.
【００１４】この実施例の場合には、扉１８を左右に開
くのではなく、開口穴１８ａが炉心管１，２の中心位置
に来るように扉１８を移動させ、上下の炉心管１，２を
連通させる。一方、上下の炉心管１，２を仕切る場合に
は、扉１８の開口穴１８ａ以外の部分が炉心管１，２の
中心位置に来るように扉１８を移動させればよい。扉１
８が全閉位置または全開位置のいずれにあっても、炉心
管１，２には扉１８のための隙間が閉じられる構造とな
っているので、炉心管１，２の内部がほぼシールされ
る。そのため、ＰｂＯ蒸気が外部に漏れ出たり、炉心管
１，２内部の温度分布が変化するおそれがない。In the case of this embodiment, instead of opening the door 18 to the left and right, the door 18 is moved so that the opening hole 18a is located at the center position of the core tubes 1 and 2, and the upper and lower core tubes 1 and 2 are moved. To communicate. On the other hand, when partitioning the upper and lower reactor cores 1 and 2, the door 18 may be moved so that the portion of the door 18 other than the opening hole 18a is located at the center position of the reactor cores 1 and 2. Door 1
Even if 8 is in the fully closed position or the fully opened position, the gaps for the doors 18 are closed in the core tubes 1 and 2, so that the interiors of the core tubes 1 and 2 are almost sealed. . Therefore, there is no possibility that PbO vapor will leak to the outside or that the temperature distribution inside the core tubes 1 and 2 will change.
【００１５】図５は本発明の第３実施例を示し、第１実
施例と同一部品には同一符号を付して説明を省略する。
この実施例では、上側の炉心管２０を下側の炉心管２１
より小径とし、上側炉心管２０の外側に配置されたヒー
タ２２を、下側炉心管２１の外側に配置されたヒータ２
３，２４より小径としてある。そして、上下の炉心管２
０，２１の間に、水平方向に移動自在な１枚の扉２５が
設けられている。この扉２５には、上側炉心管２０の内
径とほぼ同径の開口穴２５ａが設けられている。FIG. 5 shows a third embodiment of the present invention. The same parts as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
In this embodiment, the upper core tube 20 is replaced with the lower core tube 21.
The heater 22 having a smaller diameter and arranged on the outer side of the upper core tube 20 is replaced by the heater 2 arranged on the outer side of the lower core tube 21.
The diameter is smaller than 3,24. And the upper and lower core tubes 2
Between 0 and 21, one door 25 that is movable in the horizontal direction is provided. The door 25 is provided with an opening hole 25a having substantially the same diameter as the inner diameter of the upper core tube 20.
【００１６】上記のように上側炉心管２０を下側の炉心
管２１より小径とすることによって、上側の加熱ゾーン
がリフレクタとしての役割を果たし、貴金属製のリフレ
クタを別途設けなくてもよくなり、上ヒータ２２の設定
温度を調節するだけで、炉内温度分布を容易に制御する
ことができる。上記構成の液相エピタキシャル成長装置
の場合、所定の設定温度で炉内の温度分布を測定したと
ころ、温度の揺らぎは最大０．５℃と小さいものであっ
た。扉２５の開閉時の炉内温度の揺らぎは１℃以内であ
った。By making the upper core tube 20 have a smaller diameter than the lower core tube 21 as described above, the upper heating zone functions as a reflector, and it is not necessary to provide a reflector made of noble metal separately. The temperature distribution in the furnace can be easily controlled only by adjusting the set temperature of the upper heater 22. In the case of the liquid phase epitaxial growth apparatus having the above configuration, when the temperature distribution in the furnace was measured at a predetermined set temperature, the temperature fluctuation was as small as 0.5 ° C. at maximum. The fluctuation in the furnace temperature when the door 25 was opened and closed was within 1 ° C.
【００１７】表１は、従来の扉を有さず、一定直径の炉
心管を用いた従来の装置と、本発明（第３実施例）の装
置による単結晶膜のピット密度を示したものである。表
１から分かるように、予熱時および徐冷時に扉２５によ
って下地基板１３にＰｂＯ蒸気がかからないようにした
ので、育成された磁性ガーネット単結晶膜の結晶学的欠
陥（ピット）を１／４以下に激減させることができた。Table 1 shows the pit densities of the single crystal film by the conventional apparatus using the core tube having a constant diameter without the conventional door and the apparatus of the present invention (third embodiment). is there. As can be seen from Table 1, since PbO vapor was not applied to the base substrate 13 by the door 25 during preheating and slow cooling, the crystallographic defects (pits) in the grown magnetic garnet single crystal film were reduced to 1/4 or less. I was able to drastically reduce it.
【００１８】[0018]
【表１】 [Table 1]
【００１９】なお、上記実施例では磁性ガーネット単結
晶について説明したが、本発明はこれのみに限定される
ものではなく、例えば光学デバイス用単結晶であるニオ
ブ酸リチウムの液相エピタキシャル成長にも本発明を適
用することができる。Although the magnetic garnet single crystal has been described in the above embodiments, the present invention is not limited to this. For example, the present invention is also applicable to liquid phase epitaxial growth of lithium niobate, which is a single crystal for optical devices. Can be applied.
【００２０】[0020]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、坩堝の上方位置に炉心管を仕切可能な扉を設け
たので、下地基板の予熱時や育成後の徐冷時に、溶液か
ら蒸発する溶剤蒸気による下地基板の汚染を防止でき
る。そのため、良質の単結晶膜を再現性よく製造でき
る。As is apparent from the above description, according to the present invention, since the door capable of partitioning the core tube is provided above the crucible, the pre-heating of the base substrate and the slow cooling after the growth, It is possible to prevent the contamination of the underlying substrate by the solvent vapor that evaporates from the solution. Therefore, a high quality single crystal film can be manufactured with good reproducibility.
【図１】本発明にかかる液相エピタキシャル成長装置の
第１実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of a first embodiment of a liquid phase epitaxial growth apparatus according to the present invention.
【図２】図１のII−II線断面図である。FIG. 2 is a sectional view taken along line II-II in FIG.
【図３】本発明にかかる液相エピタキシャル成長装置の
第２実施例の縦断面図である。FIG. 3 is a vertical sectional view of a second embodiment of the liquid phase epitaxial growth apparatus according to the present invention.
【図４】（ａ）は扉閉鎖時の図３のIV−IV線断面図、
（ｂ）は扉開放時の図３のIV−IV線断面図である。4A is a sectional view taken along line IV-IV of FIG. 3 when the door is closed,
FIG. 4B is a sectional view taken along the line IV-IV in FIG. 3 when the door is opened.
【図５】本発明にかかる液相エピタキシャル成長装置の
第３実施例の縦断面図である。FIG. 5 is a vertical sectional view of a third embodiment of the liquid phase epitaxial growth apparatus according to the present invention.
１，２ 炉心管 ３ 扉 ７ 坩堝 ８〜１１ ヒータ １２ 溶液 １３ 下地基板 1, 2 core tube 3 door 7 crucible 8 to 11 heater 12 solution 13 base substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 青田 充弘 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (72)発明者 関島 雄徳 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (72)発明者 鷹木 洋 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuhiro Aoda 2 26-10 Tenjin, Nagaokakyo City, Kyoto Prefecture Murata Manufacturing Co., Ltd. (72) Inventor Yutoku Sekijima 2 26-10 Tenjin, Nagaokakyo, Kyoto Stock Murata Manufacturing Co., Ltd. (72) Inventor Hiroshi Takagi 2 26-10 Tenjin Tenjin, Nagaokakyo City, Kyoto Stock Company Murata Manufacturing Co., Ltd.
Claims (1)
心管をヒータで加熱することにより坩堝内の単結晶原料
を溶解し、この溶液内に下地基板を浸漬して液相エピタ
キシャル法により下地基板の表面に単結晶膜を育成する
液相エピタキシャル成長装置において、 上記坩堝の直上に、炉心管を上下に仕切可能な扉を水平
方向に移動可能に設けたことを特徴とする液相エピタキ
シャル成長装置。1. A crucible is arranged in a vertical cylindrical core tube, and the single crystal raw material in the crucible is melted by heating the core tube with a heater, and a base substrate is dipped in this solution to form a liquid phase. A liquid phase epitaxial growth apparatus for growing a single crystal film on the surface of a base substrate by an epitaxial method, characterized in that a door capable of vertically partitioning a core tube is provided movably in the horizontal direction directly above the crucible. Phase epitaxial growth system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23133992A JPH0656573A (en) | 1992-08-05 | 1992-08-05 | Liquid phase epitaxial growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23133992A JPH0656573A (en) | 1992-08-05 | 1992-08-05 | Liquid phase epitaxial growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0656573A true JPH0656573A (en) | 1994-03-01 |
Family
ID=16922086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23133992A Pending JPH0656573A (en) | 1992-08-05 | 1992-08-05 | Liquid phase epitaxial growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0656573A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5603762A (en) * | 1994-05-31 | 1997-02-18 | Ngk Insulators, Ltd. | Process and apparatus for the production of films of oxide type single crystal |
| JP2010064914A (en) * | 2008-09-09 | 2010-03-25 | Toyota Motor Corp | Apparatus and method for manufacturing silicon carbide single crystal |
-
1992
- 1992-08-05 JP JP23133992A patent/JPH0656573A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5603762A (en) * | 1994-05-31 | 1997-02-18 | Ngk Insulators, Ltd. | Process and apparatus for the production of films of oxide type single crystal |
| JP2010064914A (en) * | 2008-09-09 | 2010-03-25 | Toyota Motor Corp | Apparatus and method for manufacturing silicon carbide single crystal |
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