JPH0582990B2 - - Google Patents

Info

Publication number: JPH0582990B2
Authority: JP; Japan
Prior art keywords: imaging device; optical sensor; dimensional semiconductor; gate; switch
Prior art date: 1985-12-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP60296473A

Other languages

English (en)

Japanese (ja)

Other versions

JPS62152162A (ja

Inventor

Junichi Nishizawa

Akimasa Tanaka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-12-25

Filing date

1985-12-25

Publication date

1993-11-24

1985-12-25 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

1985-12-25 Priority to JP60296473A priority Critical patent/JPS62152162A/ja

1987-07-07 Publication of JPS62152162A publication Critical patent/JPS62152162A/ja

1993-11-24 Publication of JPH0582990B2 publication Critical patent/JPH0582990B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 53
230000003287 optical effect Effects 0.000 claims description 39
238000003384 imaging method Methods 0.000 claims description 36
230000006698 induction Effects 0.000 claims description 24
230000003068 static effect Effects 0.000 claims description 22
206010034972 Photosensitivity reaction Diseases 0.000 claims description 4
230000036211 photosensitivity Effects 0.000 claims description 4
230000001443 photoexcitation Effects 0.000 claims description 2
239000000758 substrate Substances 0.000 description 8
238000010586 diagram Methods 0.000 description 6
230000000694 effects Effects 0.000 description 5
239000012535 impurity Substances 0.000 description 5
230000035945 sensitivity Effects 0.000 description 5
230000003321 amplification Effects 0.000 description 4
230000003111 delayed effect Effects 0.000 description 4
230000005669 field effect Effects 0.000 description 4
238000003199 nucleic acid amplification method Methods 0.000 description 4
238000009825 accumulation Methods 0.000 description 2
230000010354 integration Effects 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
101000878595 Arabidopsis thaliana Squalene synthase 1 Proteins 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
239000000969 carrier Substances 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
239000000284 extract Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000000034 method Methods 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Power Engineering (AREA)
Electromagnetism (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Solid State Image Pick-Up Elements (AREA)
Transforming Light Signals Into Electric Signals (AREA)

JP60296473A 1985-12-25 1985-12-25 一次元半導体撮像装置 Granted JPS62152162A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP60296473A JPS62152162A (ja)	1985-12-25	1985-12-25	一次元半導体撮像装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60296473A JPS62152162A (ja)	1985-12-25	1985-12-25	一次元半導体撮像装置

Publications (2)

Publication Number	Publication Date
JPS62152162A JPS62152162A (ja)	1987-07-07
JPH0582990B2 true JPH0582990B2 (nl)	1993-11-24

Family

ID=17834007

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60296473A Granted JPS62152162A (ja)	1985-12-25	1985-12-25	一次元半導体撮像装置

Country Status (1)

Country	Link
JP (1)	JPS62152162A (nl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5335318B2 (ja) *	2008-08-18	2013-11-06	キヤノン株式会社	光センサ、測定装置及びカメラシステム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59107569A (ja) *	1982-12-13	1984-06-21	Fuji Photo Film Co Ltd	一次元半導体撮像装置

1985
- 1985-12-25 JP JP60296473A patent/JPS62152162A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59107569A (ja) *	1982-12-13	1984-06-21	Fuji Photo Film Co Ltd	一次元半導体撮像装置

Also Published As

Publication number	Publication date
JPS62152162A (ja)	1987-07-07

Legal Events

Date	Code	Title	Description
2003-11-24	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
US4209806A (en)	1980-06-24	Solid-state imaging device
JP4295740B2 (ja)	2009-07-15	電荷結合素子型イメージセンサ
JPH0312510B2 (nl)	1991-02-20
JPH0444465B2 (nl)	1992-07-21
KR20010032108A (ko)	2001-04-16	전자 스틸 카메라 어플리케이션에 적합한 화소내 프레임저장 소자, 어레이, 및 전자 셔터 방법
JPS6149822B2 (nl)	1986-10-31
US5274459A (en)	1993-12-28	Solid state image sensing device with a feedback gate transistor at each photo-sensing section
JPH084136B2 (ja)	1996-01-17	電荷転送装置
JPH04312082A (ja)	1992-11-04	固体撮像装置
US4450464A (en)	1984-05-22	Solid state area imaging apparatus having a charge transfer arrangement
JPS5831669A (ja)	1983-02-24	固体撮像装置
US4684968A (en)	1987-08-04	JFET imager having light sensing inversion layer induced by insulator charge
US5825056A (en)	1998-10-20	Scanning switch transistor for solid state imaging device
JPH0714042B2 (ja)	1995-02-15	固体撮像素子
JPH06101815B2 (ja)	1994-12-12	撮像装置
JPH0582990B2 (nl)	1993-11-24
JP2001189441A (ja)	2001-07-10	光電変換装置
JPS61228667A (ja)	1986-10-11	固体撮像装置
JPS59188278A (ja)	1984-10-25	半導体撮像装置
JPH0630392B2 (ja)	1994-04-20	一次元半導体撮像装置
JPH1022489A (ja)	1998-01-23	固体撮像素子
JPS6376477A (ja)	1988-04-06	光電変換装置
JPH026228B2 (nl)	1990-02-08
JPH10267752A (ja)	1998-10-09	熱型赤外線センサ
JPS6050101B2 (ja)	1985-11-06	固体撮像装置