JPH0571183B2 - - Google Patents

Info

Publication number
JPH0571183B2
JPH0571183B2 JP61135113A JP13511386A JPH0571183B2 JP H0571183 B2 JPH0571183 B2 JP H0571183B2 JP 61135113 A JP61135113 A JP 61135113A JP 13511386 A JP13511386 A JP 13511386A JP H0571183 B2 JPH0571183 B2 JP H0571183B2
Authority
JP
Japan
Prior art keywords
case
holding member
substrate
power semiconductor
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61135113A
Other languages
English (en)
Other versions
JPS61292949A (ja
Inventor
Naideihi Aruno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
Asea Brown Boveri AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri AB filed Critical Asea Brown Boveri AB
Publication of JPS61292949A publication Critical patent/JPS61292949A/ja
Publication of JPH0571183B2 publication Critical patent/JPH0571183B2/ja
Granted legal-status Critical Current

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Classifications

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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Mounting Of Printed Circuit Boards And The Like (AREA)

Description

【発明の詳細な説明】 ［産業上の利用分野］ この発明は、上下両面をメタライズされ、上面
には構成素子を備え、プラスチツクケースへ組み
込まれ、封止用コンパウンドで覆われたセラミツ
ク基板から成る電力用半導体モジユールに関す
る。この電力用半導体モジユールは、整流器分野
で使用される。
［従来の技術及び発明が解決しようとする問題
点］ 上記の種類の電力用半導体モジユールの場合、
損失熱が発生すると、この熱はモジユールの底面
を介して冷却体へ放出される。良好な熱防止を保
証するため、冷却体上のモジユールの層の面積を
大きくする必要がある。更には、特に、損失熱を
発生する構成素子の領域で、基板を冷却体へ十分
に押圧する必要がある。特に、面積の大きい基板
の場合、層全体に渡つて必要な押圧を確保するこ
とはむずかしい。基板がわずかに凸状にたわむの
を調整するために、基板の下面のメタライズ層
が、上面のメタライズ層よりも幾分薄く形成され
ている。しかし、この処置は、上側の構造がたわ
みに作用を及ぼすから、必ずしも効果的ではな
い。更に、構成素子の半田付けによつて、余計に
ゆがみが生じる。たわみを調節する場合にこのよ
うな余計なゆがみを予測するのは極めてむずかし
い。
このような問題を回避するために、カバーへの
基板の支持部を備えたモジユールの構造は周知で
あつた。
プラスチツクケースの面に形成された支持部
は、***公開公報第3323246号により公知である。
しかし、プラスチツクケース面に支持部を形成す
るためには、公差が極めて小さなプラスチツクケ
ースを製造する必要がある。特に、ケースがかな
り大きい場合、このような極めて小さな公差を保
つことはむずかしい。
従つて、この発明の目的は簡単な方法で実現す
ることが出来、従来の解決法の欠点を防止する支
持部を提供することにある。
［問題点を解決するための手段］ 両面をメタライズされ、一方面には構成素子を
備え、プラスチツクケースへ組み込まれ、封止用
充填材で覆われたセラミツク基板から成る電力用
半導体モジユールにおいて、少なくとも１個の保
持部材が基板又は構成素子上に配置され、第１の
軟質封止用コンパウンドとして弾性充填材が設け
られ、この弾性充填材から１個以上の保持部材の
上部が突出し、熱硬化性プラスチツクから成る充
填材が第２の軟質封止用充填材として設けられ、
この第２充填材は１個以上の保持部材の上部を覆
い、ケース１１と結合している電力用半導体モジ
ユールが提供させる。
［利点］ 本発明の解決法の主な利点は、簡単な手段によ
つて持続的に効果的な支持を達成し、組立装置又
は調整装置を必要としないことにある。ケースの
公差にさほどの要件を必要としない。配置された
保持部材が絶縁物で形成されていることは利点で
ある。その理由は、絶縁物で形成されていれば、
配置の際、充電部を考慮する必要がないからであ
る。配置された保持部材の上方のケースに設けら
れたリブ又はそれ以外の成型体によつて、保持部
材の固定と保持部材の支持作用とを有利な方法で
一層改良することが出来る。
［実施例］ 以下、図面を参照して本発明を実施例に基づい
て説明する。
第１図は、回復ダイオードを有する部分的に調
整された単相ブリツジの実施例である。。セラミ
ツク基板１の構造化されたメタライズ層２には、
２個のサイリスタ３と３個のダイオード４が配置
されている。モリブデン製調整円形体５がサイリ
スタ３とダイオード４の上下両面に夫々設置され
ている。サイリスタ３及びダイオード４の、上方
に位置するカソード側をメタライズ層に接続する
ために、金属製クリツプ６が上側の調整円形体５
と構造化されたメタライズ層２との間に設置され
ている。更に、湾曲部を有するリード部材７は、
メタライズ層２に半田付けされている。ワイヤ８
がサイリスタ３のゲート電極から外側ゲート電極
用バツド９へ形成されている。
上記の組立てられた基板１は、通常の方法で製
造することが出来る。この場合、メタライズされ
構造化された基板１を基礎とし、その上に、構成
素子３，４と接合部材５乃至９が半田付けされて
いる。第２図に示すように、基板１の下面は、メ
タライズ層１９を備えている。メタライズ層２及
び１９は、好ましくは、銅とセラミツクを直接結
合することによつて形成される。
最終的な軟ろう付け行程の後、セラミツク材製
保持部材１０が、基板１に固定される。保持部材
１０用セラミツク材の膨脹係数が、ケース及び封
止用充填材（コンパウンド）に用いられるプラス
チツクの膨脹係数よりも小さく選択されているの
は、目的に適つている。これによつて、基板１、
冷却後、保持部材１０が組込まれている箇所で、
わずかに凸状にたわむので、冷却体への良好な熱
的接触が達成される。保持部材１０用材料は、例
えば、Al2O3、ムル石、凍石のような価格の手頃
なセラミツクである。基板１上の保持部材の支持
面は凹凸があつてはならない。その理由は、小さ
過ぎる支持面であると、機械的な圧力が生じるこ
とによつて、基板１を損傷する可能性があるから
である。
保持部材１０は、好ましくは、基板１の中央
と、別個に装荷された構造部材３，４とに配置さ
れる。図面の実施例では、保持部材１０は基板１
の中央に配置され、第２の保持部材１０は、２個
のサイリスタ３をブリツジしている上側調整円形
体５に配置されている。当然なことであるが、２
個のサイリスタ３用の共通な保持部材１０の代り
に、１個のサイリスタ３に対して、数個の環状保
持部材１０を用いることも出来る。この場合、保
持部材１０を調整円形体５の上の中心に配置し、
ゲート電極用ワイヤ８を、保持部材１０の中の孔
へ案内することは、目的に適つている。
保持部材１０を固定するためには、好ましくは
接着剤を使用することが出来る。例えば、所望の
箇所にピンを半田付けし、ピンに対応した孔を有
する保持部材１０を、そのピンに取付けて固定す
ることも出来る。封止の間、保持部材１０は上方
へ押圧されない。その理由は、保持部材１０の比
重が封止用コンパウンドの比重よりも大きいから
である。例えば、メタライズされた保持部材１０
を半田付けするという固定法も、当然、可能であ
る。
貼着された保持部材１０の助けをかりて、基板
１をケースへ貼着して組込む。フレームと別個の
カバーとから成るケースの場合には、基板１をフ
レームへ貼着した後、（張付けるかピンに取付け
るかして）保持部材を取付けることも出来る。
第２図はフード形ケース１１を有するモジユー
ルの断面図である。詳しくは、第１図に記載され
た面Ａ−Ｂにおける断面図である。ケース１１
は、モジユールを冷却体に固定するねじ用の孔１
２を設けたフランジ１４を有する。ケース１１の
上面には、リード部材７，９を貫通し、且つ封止
用コンパウンドを充填するための孔１３が設けら
れている。ケース１１の内側はリブ１５を有して
いる。リブ１５の下方に設けられた保持部材１０
の長さはリブ１５と保持部材１０の間に約１mmの
間隔が形成されるように選択されている。
まず、好ましくは弾性を保つ軟質封止用コンパ
ウンド１６を、図示のように配置された中へ充填
する。しかも、保持部材１０が軟質封止用コンパ
ウンド１６から約１乃至２mm突出するほどに充填
するのである。軟質封止用コンパウンド１６が架
橋した後、例えば、熱硬化性プラスチツクの硬質
封止用コンパウンド１７、好ましくはエポキシド
系注型用樹脂を充填する。このような樹脂は、約
150℃で軟化して、保持部材１０の上部を、ケー
ス１１に、実質にリブ１５に固定する。モジユー
ルの冷却後、基板１の下面は平坦であるかわずか
に凸状になるかである。
上述のように、保持部材１０は、ケース１１
と、固く結合している硬質封止用コンパウンド１
７の中に固定される。保持部材１０の上面と、リ
ブ１５乃至それ以外の、ケース１１に設けられた
成型物との間の間隔へ、まさに必要なだけの硬質
封止用コンパウド１７が充填される。それは、モ
ジユールの平坦な底面を形成するためである。平
坦な底面の形成の効果は（架橋）結合の過程によ
つて生じた曲げ応力が、まさに硬質封止用コンパ
ウンド１７の硬化温度、即ち約150℃の場合に無
くなることによつて特に促進する。硬質封止用コ
ンパウンド１７の収縮が保持効果に不利に作用し
ないよう、保持部材１０の上面とリブ１５の間の
間隔が大き過ぎてはならない。従つて、約１mmの
間隔幅が好ましい。保持部材１０の外側に、軟質
封止用コンパウンド１６と硬質封止用コンパウン
ド１７の間に、収縮によつて間隔１８が生じるこ
とがあるが、保持効果上は問題ない。
硬質封止用コンパウンド１７が硬化し冷却した
後に、プラスチツクケース１１の縦方向の収縮
は、凹状のたわみに対して反作用する。保持部材
１０の膨脹係数が（ケース１１及び封止用コンパ
ウンド１６，１７用のプラスチツクの膨脹係数）
よりも小さいので、保持部材１０が取付けられた
箇所で、基板１がわずかに凹状に湾曲する。これ
によつて、モジユールをねじで固定した後、基板
と冷却体との良好な熱的接触が促進される。モジ
ユールの底面の所望の形態は、上述のように、自
動的に、即ち、取付板等の調整用補助具を用いる
ことなく、調整される。
【図面の簡単な説明】
第１図は組立てられた基板の平面図、第２図は
プラスチツクを封止した、第１図の線Ａ−Ｂにつ
いてのモジユールの断面図である。 １……セラミツク基板、３……構成素子、４…
…構成素子、５……調整円形対、１０……保持部
材、１１……ケース、１５……リブ、１６……軟
質封止用コンパウンド、１７……硬質封止用コン
パウンド。

Claims (1)

  1. 【特許請求の範囲】 １ 両面をメタライズされ、一方面には構成素子
    を備え、プラスチツクケースへ組み込まれ、封止
    用充填材で覆われたセラミツク基板から成る電力
    用半導体モジユールにおいて、 少なくとも１個の保持部材１０が基板１又は構
    成素子３，４上に配置され、 第１の軟質封止用コンパウンド１６として弾性
    充填材が設けられ、この弾性充填材から１個以上
    の保持部材１０の上部が突出し、 熱硬化性プラスチツクから成る充填材が第２の
    軟質封止用充填材１７として設けられ、この第２
    充填材は１個以上の保持部材１０の上部を覆い、
    ケース１１と結合していることを特徴とする電力
    用半導体モジユール。 ２ 前記保持部材が絶縁材（例えばセラミツク）
    から成り、この保持部材の膨脹係数がケース１１
    及び封止用コンパウンド１６，１７用のプラスチ
    ツク材の膨脹係数よりも小さいことを特徴とする
    特許請求の範囲第１項記載の電力用半導体モジユ
    ール。 ３ 成型体又はリブ１５が前記保持部材１０と前
    記ケース１１との間に圧力閉塞結合を形成するた
    めに、少なくとも前記保持部材１０の上方領域に
    おける前記ケース１１の面に設けられ、前記保持
    部材１０と前記ケース１１、実質にはリブ１５と
    の間に好ましくは１mm幅の隙間が夫々形成され、
    熱硬化性プラスチツクから成る充填用コンパウン
    ド１７で充填されていることを特徴とする特許請
    求の範囲第１項又は第２項記載の電力用半導体モ
    ジユール。 ４ 前記保持部材１０は前記充填用コンパウンド
    の充填の前にセラミツク基板１又は構成素子３，
    ４、実質に構成素子３，４の調整円形体５に貼着
    によつて固定されていることを特徴とする特許請
    求の範囲第１項乃至第３項いずれかの１に記載の
    電力用半導体モジユール。 ５ 前記保持部材１０が前記充填用コンパウンド
    の充填の前に前記セラミツク基板１又は前記構成
    素子３，４、実質に前記構成素子３，４の調整円
    形体５にピンで取付けて半田付けされていること
    を特徴とする特許請求の範囲第１項乃至第３項い
    ずれかの１に記載の電力用半導体モジユール。
JP61135113A 1985-06-15 1986-06-12 電力用半導体モジユ−ル Granted JPS61292949A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3521572.0 1985-06-15
DE19853521572 DE3521572A1 (de) 1985-06-15 1985-06-15 Leistungshalbleitermodul mit keramiksubstrat

Publications (2)

Publication Number Publication Date
JPS61292949A JPS61292949A (ja) 1986-12-23
JPH0571183B2 true JPH0571183B2 (ja) 1993-10-06

Family

ID=6273418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61135113A Granted JPS61292949A (ja) 1985-06-15 1986-06-12 電力用半導体モジユ−ル

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Country Link
US (1) US4731644A (ja)
EP (1) EP0205746B1 (ja)
JP (1) JPS61292949A (ja)
DE (2) DE3521572A1 (ja)

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Also Published As

Publication number Publication date
EP0205746B1 (de) 1990-02-07
US4731644A (en) 1988-03-15
DE3669017D1 (de) 1990-03-15
JPS61292949A (ja) 1986-12-23
DE3521572A1 (de) 1986-12-18
EP0205746A3 (en) 1987-07-22
EP0205746A2 (de) 1986-12-30

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