JPH0563240A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH0563240A JPH0563240A JP3133418A JP13341891A JPH0563240A JP H0563240 A JPH0563240 A JP H0563240A JP 3133418 A JP3133418 A JP 3133418A JP 13341891 A JP13341891 A JP 13341891A JP H0563240 A JPH0563240 A JP H0563240A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- parts
- silica fine
- fine particles
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、光透過率および低応
力性の双方に優れた封止樹脂により樹脂封止しされた光
半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device resin-encapsulated with an encapsulating resin which is excellent in both light transmittance and low stress.
【０００２】[0002]
【従来の技術】ＬＥＤ（発光ダイオード）等の光半導体
素子を封止する際に用いられる封止樹脂は、透明である
ことが要求され、一般に、ビスフエノール型エポキシ樹
脂，脂環式エポキシ樹脂などのエポキシ樹脂が用いら
れ、これの硬化剤としては、通常用いられるフエノール
樹脂系硬化剤に代えて、酸無水物系硬化剤が組み合わさ
れて用いられている。2. Description of the Related Art An encapsulating resin used for encapsulating an optical semiconductor element such as an LED (light emitting diode) is required to be transparent. Generally, a bisphenol type epoxy resin, an alicyclic epoxy resin or the like is used. The epoxy resin is used, and as the curing agent for the epoxy resin, an acid anhydride curing agent is used in combination in place of the usually used phenol resin curing agent.
【０００３】しかし、上記エポキシ樹脂と酸無水物系硬
化剤とを主成分とするエポキシ樹脂組成物を封止樹脂と
して用いると、エポキシ樹脂組成物の硬化時の硬化収縮
ないしはエポキシ樹脂と光半導体素子との線膨張係数の
差に起因する歪みにより内部応力が発生し、それが原因
で光半導体素子が劣化し、例えば、光半導体素子がＬＥ
Ｄの場合、その輝度が低下するという問題が生じる。こ
のような問題を解決するためには、エポキシ樹脂の内部
応力を低減させる必要があり、その一つの方法として、
シリカ粒子を配合することによりエポキシ樹脂組成物硬
化体の線膨張係数を小さくするという方法が提案されて
いる。However, when an epoxy resin composition containing the above-mentioned epoxy resin and an acid anhydride type curing agent as main components is used as a sealing resin, curing shrinkage of the epoxy resin composition at the time of curing or epoxy resin and optical semiconductor element The internal stress is generated due to the strain caused by the difference in the coefficient of linear expansion between the optical semiconductor element and the optical semiconductor element.
In the case of D, there arises a problem that the brightness decreases. In order to solve such a problem, it is necessary to reduce the internal stress of the epoxy resin, and as one of the methods,
A method has been proposed in which the linear expansion coefficient of the cured epoxy resin composition is reduced by incorporating silica particles.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記の
ようにシリカ粒子を添加する方法は、内部応力を低下さ
せることはできても、エポキシ樹脂組成物硬化体からな
る封止樹脂の光透過率が著しく低下するという致命的な
難点がある。However, in the method of adding silica particles as described above, although the internal stress can be reduced, the light transmittance of the encapsulating resin made of the cured epoxy resin composition is improved. There is a fatal difficulty that it will drop significantly.
【０００５】この発明は、このような事情に鑑みなされ
たもので、内部応力が小さく、しかも透明性に優れた封
止樹脂層を備えた光半導体装置の提供をその目的とす
る。The present invention has been made in view of such circumstances, and an object thereof is to provide an optical semiconductor device provided with an encapsulating resin layer having a small internal stress and excellent transparency.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
め、この発明の光半導体装置は、半導体素子と、これを
封止する封止樹脂層とを備え、上記封止樹脂層が透明性
エポキシ樹脂を主成分とする透明性エポキシ樹脂組成物
硬化体と、この硬化体中に硬化体全体の１０〜７０重量
％の割合で分散された粒子径０．１μｍ以下のシリカ微
粒子とから構成されているという構成をとる。In order to achieve the above object, an optical semiconductor device of the present invention comprises a semiconductor element and a sealing resin layer for sealing the semiconductor element, and the sealing resin layer is transparent. It is composed of a transparent epoxy resin composition cured product containing an epoxy resin as a main component, and silica fine particles having a particle diameter of 0.1 μm or less dispersed in the cured product at a ratio of 10 to 70% by weight of the entire cured product. It takes the structure of.
【０００７】[0007]
【作用】本発明者らは、内部応力が小さく、しかも光透
過性に優れた封止樹脂を得るために一連の研究を重ね
た。その研究の過程で、シリカ粒子をエポキシ樹脂とと
もに用いた場合に、光透過率が低下するのはシリカ粒子
の粒子径が大きいためではないかと想起した。すなわ
ち、シリカ粒子の粒子径は、通常、数μｍ〜数十μｍオ
ーダーであり、先に述べた提案法は、このような粒子径
のシリカ粒子を、エポキシ樹脂およびその硬化剤等とと
もに配合してエポキシ樹脂組成物をつくり、これを用い
て半導体素子を封止するというものである。そこで、本
発明者らは、このようなシリカ粒子の粒子径を数μｍオ
ーダーよりもかなり微細な０．１μｍ以下にし、これを
用いて半導体素子の樹脂封止を試みたところ、良好な成
績を得た。そこで、本発明者らは、これについてさらに
研究を重ねた結果、このような微細粒子径のシリカ粒子
を用いる場合において、内部応力と光透過率の双方を満
足させるためには、上記微細粒子径のシリカ粒子をエポ
キシ樹脂組成物硬化体の全体中に１０〜７０重量％の割
合で分散させることが必要であることを見いだしこの発
明に到達した。The present inventors have conducted a series of studies in order to obtain a sealing resin having a small internal stress and excellent light transmittance. In the course of that research, I recalled that the reason why the light transmittance decreases when silica particles are used with an epoxy resin is because the particle size of the silica particles is large. That is, the particle size of the silica particles is usually on the order of several μm to several tens of μm, and the proposed method described above involves mixing silica particles having such a particle size with an epoxy resin and a curing agent therefor. An epoxy resin composition is prepared and a semiconductor element is encapsulated using the composition. Therefore, the present inventors have made the particle diameter of such silica particles 0.1 μm or less, which is considerably finer than the order of several μm, and attempted resin encapsulation of semiconductor elements using this, and obtained good results. Obtained. Therefore, as a result of further research on this, the present inventors have found that in the case of using silica particles having such a fine particle diameter, in order to satisfy both the internal stress and the light transmittance, It was found that it is necessary to disperse the above silica particles in an amount of 10 to 70% by weight in the entire cured product of the epoxy resin composition, and the present invention has been reached.
【０００８】なお、上記微細なシリカ微粒子は、不安定
なため、そのままエポキシ樹脂，硬化剤等と混合する
と、凝集し大きな粒子（二次粒子）となりやすく、それ
によつて封止樹脂の白濁化を招く場合がある。そこで、
本発明者らは、シリカ粒子をエポキシ樹脂等に単に混合
するのではなく、エポキシ樹脂中でシリカ粒子を合成す
るという発想をなし、これにもとづき液状のエポキシ樹
脂中でアルコキシシランを水存在下で反応させたとこ
ろ、粒子径０．１μｍ以下のシリカ微粒子が、エポキシ
樹脂中でほぼ均一分散状態で合成されることを突き止め
た。したがつて、この方法で得られた微細シリカ粒子含
有のエポキシ樹脂をそのまま用いることにより、この発
明の光半導体装置を容易に製造することが可能となる。Since the fine silica fine particles are unstable, if they are directly mixed with an epoxy resin, a curing agent, etc., they tend to agglomerate into large particles (secondary particles), which causes the sealing resin to become cloudy. May be invited. Therefore,
The present inventors have an idea of synthesizing silica particles in an epoxy resin rather than simply mixing the silica particles with an epoxy resin, and based on this, alkoxysilane in a liquid epoxy resin in the presence of water. Upon reaction, it was found that silica fine particles having a particle diameter of 0.1 μm or less were synthesized in an epoxy resin in a substantially uniform dispersion state. Therefore, by using the epoxy resin containing fine silica particles obtained by this method as it is, the optical semiconductor device of the present invention can be easily manufactured.
【０００９】つぎに、この発明について詳しく説明す
る。Next, the present invention will be described in detail.
【００１０】この発明に用いるエポキシ樹脂組成物は、
粒子径０．１mm以下のシリカ微粒子が分散含有されてい
る透明性エポキシ樹脂（Ａ成分）と、酸無水物系硬化剤
（Ｂ成分）と、硬化触媒（Ｃ成分）とを用いて得られる
ものであつて、通常、液状，粉末状もしくはこの粉末を
打錠したタブレツト状になつている。The epoxy resin composition used in the present invention is
A product obtained by using a transparent epoxy resin (component A) in which silica fine particles having a particle diameter of 0.1 mm or less are dispersed, an acid anhydride curing agent (component B), and a curing catalyst (component C). Usually, it is in the form of liquid, powder or tablet made by compressing this powder.
【００１１】上記Ａ成分のシリカ微粒子分散含有透明性
エポキシ樹脂は、透明性エポキシ樹脂中に上記シリカ微
粒子を分散させたものであり、上記透明性エポキシ樹脂
としては、ビスフエノール型エポキシ樹脂，脂環式エポ
キシ樹脂等が透明性を有するために好適に用いられる。
しかし、場合により他のエポキシ樹脂を併用しても差し
支えはない。このように他のエポキシ樹脂を用いる場
合、その使用割合は、通常、全エポキシ樹脂全体の５０
重量％以下に設定される。このような透明性エポキシ樹
脂およびこれと併用されるその他のエポキシ樹脂として
は、一般に、エポキシ当量１００〜１０００，軟化点１
２０℃以下のものが用いられる。これらのエポキシ樹脂
は、常温で液状のもの、ないし常温で固形のものが適宜
に選択使用される。The transparent epoxy resin containing a dispersion of silica fine particles as the component A is a dispersion of the above silica fine particles in a transparent epoxy resin. Examples of the transparent epoxy resin include bisphenol type epoxy resins and alicyclic resins. Formula epoxy resins and the like are preferably used because they have transparency.
However, there is no problem even if other epoxy resins are used together in some cases. When other epoxy resins are used in this way, the ratio of their use is usually 50% of the total epoxy resin.
It is set to be less than weight%. As such a transparent epoxy resin and other epoxy resins used together therewith, generally, an epoxy equivalent is 100 to 1000 and a softening point is 1.
The thing below 20 degreeC is used. As these epoxy resins, those which are liquid at room temperature or those which are solid at room temperature are appropriately selected and used.
【００１２】透明性エポキシ樹脂に分散されるシリカ微
粒子は、粒子径が０．１μｍ以下のものである。このよ
うな微細なシリカ微粒子は、本発明者らが開発した特殊
な製法、すなわち、液状（固形状のエポキシ樹脂を有機
溶剤等で溶解したもの、固形状のエポキシ樹脂を熱溶融
したもの、または常温で液状のものの双方を含む）透明
性エポキシ樹脂（場合によつて他のエポキシ樹脂が併用
されている）中において、アルコキシシランを水の存在
下で反応させることによつて合成されるものであり、合
成されたシリカ微粒子は、透明性エポキシ樹脂をマトリ
ツクスとし、そのマトリツクス中に均一分散された状態
で存在し二次凝集を起こさない。より詳しく述べると、
上記シリカ微粒子は、例えば透明性エポキシ樹脂の有機
溶媒溶液に、水とアルコキシシランを加え所定時間反応
させることによつて合成することができる。このように
して合成されたシリカ微粒子の粒子径は１００〜５００
Å程度であり、可視光の波長よりも充分に小さい。そし
て、上記合成反応が終了した後、有機溶媒および水を減
圧除去することにより、シリカ微粒子がほぼ均一に分散
含有されている透明性エポキシ樹脂が得られる。この場
合、透明性エポキシ樹脂が常温で固形であれば、固形の
エポキシ樹脂中にシリカ微粒子が均一分散したものが得
られ、透明性エポキシ樹脂が常温で液状であればその液
状樹脂中にシリカ微粒子が均一分散したものが得られ
る。そして、固形のものはそれを粉砕した粉末状ないし
はこの粉末を打錠したタブレツト状にして供給される。
液状のものは、通常、そのまま用いられる。上記アルコ
キシシランとしては、テトラエトキシシラン，メチルト
リエトキシシラン，テトラメトキシシラン，テトラプロ
ポキシシラン，メチルトリプロポキシシランなどがあげ
られ、単独でもしくは併せて用いられる。特に好適なの
は、テトラエトキシシラン，メチルトリエトキシシラン
である。The silica fine particles dispersed in the transparent epoxy resin have a particle diameter of 0.1 μm or less. Such fine silica fine particles are a special production method developed by the present inventors, that is, liquid (solid epoxy resin dissolved with an organic solvent or the like, solid epoxy resin heat-melted, or Synthesized by reacting an alkoxysilane in the presence of water in a transparent epoxy resin (including both liquid at room temperature), which is optionally combined with other epoxy resins. Therefore, the synthesized silica fine particles have a transparent epoxy resin as a matrix, exist in a state of being uniformly dispersed in the matrix, and do not cause secondary aggregation. More specifically,
The fine silica particles can be synthesized, for example, by adding water and an alkoxysilane to a solution of a transparent epoxy resin in an organic solvent and allowing the mixture to react for a predetermined time. The silica fine particles thus synthesized have a particle size of 100 to 500.
It is about Å, which is sufficiently smaller than the wavelength of visible light. After the synthesis reaction is completed, the organic solvent and water are removed under reduced pressure to obtain a transparent epoxy resin in which silica fine particles are substantially uniformly dispersed and contained. In this case, if the transparent epoxy resin is solid at room temperature, silica fine particles are uniformly dispersed in the solid epoxy resin, and if the transparent epoxy resin is liquid at room temperature, silica fine particles are contained in the liquid resin. Can be uniformly dispersed. Then, the solid product is supplied in the form of a powder obtained by crushing it or in the form of a tablet made by compressing this powder.
The liquid one is usually used as it is. Examples of the alkoxysilane include tetraethoxysilane, methyltriethoxysilane, tetramethoxysilane, tetrapropoxysilane, and methyltripropoxysilane, which may be used alone or in combination. Especially preferred are tetraethoxysilane and methyltriethoxysilane.
【００１３】上記透明性エポキシ樹脂（Ａ成分）ととも
に用いられる酸無水物系硬化剤（Ｂ成分）としては、分
子量１４０〜２００程度のものが好適に用いられ、例え
ば、ヘキサヒドロ無水フタル酸，テトラヒドロ無水フタ
ル酸，メチルヘキサヒドロ無水フタル酸，メチルテトラ
ヒドロ無水フタル酸等の無色ないし淡黄色の酸無水物が
単独でもしくは併せて用いられる。このような酸無水物
系硬化剤の配合量は、上記透明性エポキシ樹脂（その他
のエポキシ樹脂を併用するときにもそれも含む）１００
重量部（以下「部」と略す）に対して５０〜２００部の
範囲に設定することが好ましい。As the acid anhydride type curing agent (component B) used together with the transparent epoxy resin (component A), those having a molecular weight of about 140 to 200 are preferably used, and examples thereof include hexahydrophthalic anhydride and tetrahydroanhydride. Colorless or pale yellow acid anhydrides such as phthalic acid, methylhexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride may be used alone or in combination. The compounding amount of such an acid anhydride-based curing agent is 100 for the above-mentioned transparent epoxy resin (including that when other epoxy resins are used in combination).
It is preferable to set it in the range of 50 to 200 parts by weight (hereinafter abbreviated as “part”).
【００１４】上記エポキシ樹脂（Ａ成分），酸無水物系
硬化剤（Ｂ成分）とともに用いられる硬化触媒（Ｃ成
分）としては、三級アミン，イミダゾール化合物および
有機金属錯塩等があげられ、単独でもしくは併用され
る。Examples of the curing catalyst (C component) used together with the epoxy resin (A component) and the acid anhydride type curing agent (B component) include tertiary amines, imidazole compounds and organometallic complex salts. Or used together.
【００１５】この発明に用いるエポキシ樹脂組成物に
は、上記Ａ〜Ｃ成分以外に、必要に応じて染料，変性
剤，変色防止剤，老化防止剤，離型剤，反応性ないし非
反応性の希釈剤などの従来公知の添加剤を適宜選択配合
することができる。In the epoxy resin composition used in the present invention, in addition to the components A to C, if necessary, a dye, a modifier, a discoloration preventing agent, an antiaging agent, a releasing agent, a reactive or non-reactive agent may be added. Conventionally known additives such as a diluent can be appropriately selected and blended.
【００１６】上記のようなエポキシ樹脂組成物は、例え
ばつぎのようにして製造することができる。すなわち、
上記（Ａ）〜（Ｃ）成分ならびにそれ以外の成分原料を
適宜配合し予備混合した後、混練機に掛けて混練して溶
融混合する。つぎに、これを室温に冷却した後、公知の
手段によつて粉砕し必要に応じて打錠するという一連の
工程により製造することができる。The epoxy resin composition as described above can be manufactured, for example, as follows. That is,
The components (A) to (C) and the raw materials other than the components are appropriately mixed and premixed, and then the mixture is kneaded in a kneader to be melt mixed. Next, it can be manufactured by a series of steps in which it is cooled to room temperature, pulverized by a known means, and tableted if necessary.
【００１７】また、上記（Ａ）成分に用いる透明性エポ
キシ樹脂が、常温で液状のものである場合には、（Ａ）
成分自体が液状となるため、上記（Ｂ）および（Ｃ）成
分ならびにそれ以外の成分を（Ａ）成分とともに混合す
るのみで目的とするエポキシ樹脂組成物を得ることがで
きる。Further, when the transparent epoxy resin used as the component (A) is liquid at room temperature, (A)
Since the components themselves become liquid, the desired epoxy resin composition can be obtained only by mixing the components (B) and (C) and the other components with the component (A).
【００１８】このようなエポキシ樹脂組成物を用いての
半導体素子の封止は、特に限定するものではなく、通常
のトランスフアー成形，注型などの公知のモールド方法
によつて行うことができ、その結果、光半導体素子を上
記エポキシ樹脂組成物硬化体からなる封止樹脂層によつ
て封止した光半導体装置が得られる。この場合、透明性
エポキシ樹脂組成物硬化体からなる封止樹脂層中に、粒
子径０．１μｍ以下のシリカ微粒子が、樹脂硬化体全体
の１０〜７０重量％を占めるように分散含有されている
ことが必要である。すなわち、本発明者らの研究によれ
ば、線膨張係数α1 および弾性率については、上記微細
シリカ粒子の含有量が１０重量％の時には、α1 は６×
１０-5／℃，曲げ弾性率は３６０kg／mm2 となり、上記
シリカ微粒子の含有量が７０重量％の時はα1 は２×１
０-6／℃，曲げ弾性率は１４００kg／mm2 程度となる。
すなわち、α1 を６×１０-5／℃〜２×１０-6／℃の範
囲内、曲げ弾性率を３６０kg／mm2 〜１４００kg／mm2
の範囲内に設定することにより、内部応力の発生を回避
することができる。同時に、シリカ微粒子の含有率を上
記の範囲内に設定することにより、充分な光透過性も確
保することができるのである。なお、上記シリカ微粒子
の含有量は、透明性エポキシ樹脂組成物硬化体を燃焼さ
せ、灰分として残るシリカ粒子の重量から算出すること
ができる。The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited and can be carried out by a known molding method such as ordinary transfer molding or casting. As a result, an optical semiconductor device is obtained in which an optical semiconductor element is sealed with a sealing resin layer made of the cured epoxy resin composition. In this case, silica fine particles having a particle diameter of 0.1 μm or less are dispersedly contained in the encapsulating resin layer made of the cured transparent epoxy resin composition so as to account for 10 to 70% by weight of the entire cured resin. It is necessary. That is, according to the studies by the present inventors, regarding the linear expansion coefficient α 1 and the elastic modulus, when the content of the fine silica particles is 10% by weight, α 1 is 6 ×.
When the bending elastic modulus is 10 −5 / ° C. and the flexural modulus is 360 kg / mm 2 , α 1 is 2 × 1 when the content of the silica fine particles is 70% by weight.
0 -6 / ° C., the flexural modulus becomes 1400 kg / mm 2 approximately.
That is, α 1 is in the range of 6 × 10 −5 / ° C. to 2 × 10 −6 / ° C., and the bending elastic modulus is 360 kg / mm 2 to 1400 kg / mm 2.
By setting within the range, it is possible to avoid the generation of internal stress. At the same time, by setting the content of the silica fine particles within the above range, sufficient light transmittance can be ensured. The content of the silica fine particles can be calculated from the weight of the silica particles left as ash by burning the cured product of the transparent epoxy resin composition.
【００１９】上記のようにして得られる光半導体装置は
透明性に優れ、しかも内部応力が極めて小さく高い信頼
性を備えている。なお、この発明において透明性とは、
着色透明の場合も含み、厚み１mm相当で６００nmの波長
の光透過率が８０〜１００％のものをいう（分光光度計
により測定）。The optical semiconductor device obtained as described above is excellent in transparency, has extremely small internal stress, and has high reliability. In the present invention, transparency means
Including the case of colored and transparent, it means a light transmittance of 80 to 100% at a wavelength of 600 nm corresponding to a thickness of 1 mm (measured by a spectrophotometer).
【００２０】[0020]
【発明の効果】以上のように、この発明の光半導体装置
は、粒子径が可視光の波長よりも充分に小さいシリカ微
粒子を含むエポキシ樹脂組成物を用いて光半導体素子を
樹脂封止して得られたものである。このため、この封止
樹脂は光透過性に優れ、しかも内部応力が小さくなつて
おり、例えばＬＥＤではその輝度劣化の抑制などが効果
的になされ、信頼性が極めて高くなる。As described above, in the optical semiconductor device of the present invention, the optical semiconductor element is resin-sealed with the epoxy resin composition containing the silica fine particles having a particle size sufficiently smaller than the wavelength of visible light. It was obtained. For this reason, this sealing resin has excellent light transmissivity, and the internal stress is reduced. For example, in the case of an LED, the luminance deterioration is effectively suppressed, and the reliability is extremely high.
【００２１】つぎに、実施例について比較例と併せて説
明する。Next, examples will be described together with comparative examples.
【００２２】[0022]
【実施例１】エポキシ当量１８５のビスフエノールＡ型
エポキシ樹脂（液状樹脂）１００部をエタノール３００
部に溶解させ、その溶液に、テトラエトキシシラン１０
０部、水９０部、触媒としての１，８−ジアザビシクロ
（５，４，０）−７−ウンデセン０．４２部を添加し、
６０℃で一時間反応させた。その後、エタノールおよび
水を減圧除去して、シリカ微粒子を含む液状の透明性エ
ポキシ樹脂を得た。この場合のシリカ微粒子の粒子径は
約２００Åであつた。Example 1 100 parts of a bisphenol A type epoxy resin (liquid resin) having an epoxy equivalent of 185 was added to 300 parts of ethanol.
10 parts, and the solution, tetraethoxysilane 10
0 parts, 90 parts of water, 0.42 parts of 1,8-diazabicyclo (5,4,0) -7-undecene as a catalyst were added,
The reaction was carried out at 60 ° C for 1 hour. Then, ethanol and water were removed under reduced pressure to obtain a liquid transparent epoxy resin containing fine silica particles. The particle size of the silica fine particles in this case was about 200Å.
【００２３】つぎに、そのシリカ微粒子含有透明性エポ
キシ樹脂２００部に、４−メチルヘキサヒドロ無水フタ
ル酸１００部、２−エチル−４−メチルイミダゾール
０．４部、酸化防止剤２．５部を混合し、液状のシリカ
微粒子含有エポキシ樹脂組成物を得た。これを、１２０
℃で熱硬化させることにより得られた硬化物の光透過率
は厚み４mmで８２％という高い値であつた。Next, to 200 parts of the silica fine particle-containing transparent epoxy resin, 100 parts of 4-methylhexahydrophthalic anhydride, 0.4 part of 2-ethyl-4-methylimidazole and 2.5 parts of an antioxidant are added. By mixing, a liquid silica fine particle-containing epoxy resin composition was obtained. This is 120
The light transmittance of the cured product obtained by heat curing at ℃ was 82% at a thickness of 4 mm, which was a high value.
【００２４】[0024]
【実施例２】テトラエトキシシランをメチルトリエトキ
シシランに代えた以外は、実施例１と同様にして、シリ
カ微粒子含有エポキシ樹脂組成物硬化物を得た。この場
合のシリカ微粒子の粒子径は、約２００Åであり、硬化
物の光透過率は厚み４mmで８１％という高い値であつ
た。Example 2 A silica fine particle-containing cured epoxy resin composition was obtained in the same manner as in Example 1 except that tetraethoxysilane was replaced with methyltriethoxysilane. The particle size of the silica fine particles in this case was about 200Å, and the light transmittance of the cured product was as high as 81% at a thickness of 4 mm.
【００２５】[0025]
【実施例３】エポキシ当量６５０のビスフエノールＡ型
エポキシ樹脂８０部（固形樹脂）をアセトン／メチルエ
チルケトン〔５０／５０（重量比）〕混合溶媒３００部
に溶解させ、その溶液に、テトラエトキシシラン１００
部、水９０部、触媒としての１，８−ジアザビシクロ
（５，４，０）−７−ウンデセン０．４２部を添加し、
６０℃で一時間反応させた。その後、アセトン、メチル
エチルケトンおよび水を減圧除去し、シリカ微粒子を含
む固形の透明性エポキシ樹脂を得た。この場合のシリカ
微粒子の粒子径は約２００Åであつた。Example 3 80 parts of a bisphenol A type epoxy resin having an epoxy equivalent of 650 (solid resin) was dissolved in 300 parts of an acetone / methyl ethyl ketone [50/50 (weight ratio)] mixed solvent, and tetraethoxysilane 100 was added to the solution.
Parts, 90 parts of water, 0.42 parts of 1,8-diazabicyclo (5,4,0) -7-undecene as a catalyst,
The reaction was carried out at 60 ° C for 1 hour. Then, acetone, methyl ethyl ketone, and water were removed under reduced pressure to obtain a solid transparent epoxy resin containing fine silica particles. The particle size of the silica fine particles in this case was about 200Å.
【００２６】つぎに、そのシリカ微粒子含有透明性エポ
キシ樹脂１８０部に、トリグリシジルイソシアヌレート
（固形エポキシ樹脂）２０部、テトラヒドロ無水フタル
酸４４部、２−エチル−４−メチルイミダゾール０．４
部、酸化防止剤２．５部を混合して、シリカ微粒子含有
エポキシ樹脂組成物を得た。これを、１５０℃で熱硬化
させた硬化物の光透過率は厚み４mmで８３％という高い
値であつた。Next, to 180 parts of the silica fine particle-containing transparent epoxy resin, 20 parts of triglycidyl isocyanurate (solid epoxy resin), 44 parts of tetrahydrophthalic anhydride, 0.4 parts of 2-ethyl-4-methylimidazole.
Parts and 2.5 parts of an antioxidant were mixed to obtain a silica fine particle-containing epoxy resin composition. The cured product thermally cured at 150 ° C. had a high light transmittance of 83% at a thickness of 4 mm.
【００２７】[0027]
【実施例４】テトラエトキシシランをメチルトリエトキ
シシランに代えた以外は実施例３と同様にして、シリカ
微粒子含有エポキシ樹脂組成物硬化物を得た。この場合
のシリカ微粒子の粒子径は約２００Åであり、硬化物の
光透過率は厚み４mmで８１％という高い値であつた。Example 4 A cured product of an epoxy resin composition containing fine silica particles was obtained in the same manner as in Example 3 except that methyltriethoxysilane was used instead of tetraethoxysilane. The particle size of the silica fine particles in this case was about 200Å, and the light transmittance of the cured product was as high as 81% at a thickness of 4 mm.
【００２８】[0028]
【比較例１】エポキシ当量１８５のビスフエノールＡ型
エポキシ樹脂（液状樹脂）１００部、４−メチルヘキサ
ヒドロ無水フタル酸１００部、２−エチル−４−メチル
イミダゾール０．４部、酸化防止剤２．５部を混合し
て、エポキシ樹脂組成物を得た。Comparative Example 1 100 parts of bisphenol A type epoxy resin (liquid resin) having an epoxy equivalent of 185, 100 parts of 4-methylhexahydrophthalic anhydride, 0.4 part of 2-ethyl-4-methylimidazole, and antioxidant 2 0.5 part was mixed to obtain an epoxy resin composition.
【００２９】[0029]
【比較例２】エポキシ当量６５０のビスフエノールＡ型
エポキシ樹脂（固形樹脂）８０部、トリグリシジルイソ
シアヌレート（固形エポキシ樹脂）２０部、テトラヒド
ロ無水フタル酸４４部、２−エチル−４−メチルイミダ
ゾール０．４部、酸化防止剤２．５部を混合して、エポ
キシ樹脂組成物を得た。Comparative Example 2 80 parts of bisphenol A type epoxy resin (solid resin) having an epoxy equivalent of 650, 20 parts of triglycidyl isocyanurate (solid epoxy resin), 44 parts of tetrahydrophthalic anhydride, 2-ethyl-4-methylimidazole 0 An epoxy resin composition was obtained by mixing 4 parts and 2.5 parts of an antioxidant.
【００３０】つぎに、実施例１〜４および比較例１，２
で得られたエポキシ樹脂組成物を用い、実際に発光ダイ
オードを樹脂封止して光半導体装置を作製した。そし
て、この光半導体装置の通電輝度劣化を測定した。その
結果を下記の表１に示す。なお、上記通電輝度劣化の測
定は、つぎのようにして行つた。すなわち、上記光半導
体装置（ＬＥＤデバイス）に定電流を流し、輝度として
電流印加５秒後の受光素子の出力電流値を求め劣化率を
測定した。 パツケージ：直径５mmのパイロツトランプ。 評価素子：ＧａＡｓ，０．５mm×０．５mm 評価条件：−３０℃放置で２０ｍＡ通電の１０００時間
後の輝度劣化率を測定した。Next, Examples 1 to 4 and Comparative Examples 1 and 2
An optical semiconductor device was manufactured by actually sealing the light emitting diode with a resin using the epoxy resin composition obtained in Step 1. Then, the deterioration of energization luminance of this optical semiconductor device was measured. The results are shown in Table 1 below. The above-mentioned deterioration of the energization luminance was measured as follows. That is, a constant current was applied to the above-mentioned optical semiconductor device (LED device), and the output current value of the light receiving element 5 seconds after the current application was calculated as the luminance to measure the deterioration rate. Package: A 5mm diameter pilot lamp. Evaluation element: GaAs, 0.5 mm × 0.5 mm Evaluation condition: The luminance deterioration rate was measured after leaving for 20 hours at -30 ° C. and 1000 hours of energization.
【００３１】[0031]
【表１】 [Table 1]
【００３２】上記表１の結果から、実施例品は比較例品
に比べて輝度劣化が抑制され、光透過性とともに低応力
性も向上していることがわかる。From the results shown in Table 1 above, it can be seen that the product of the example is suppressed in the deterioration of luminance and the light stress and the low stress property are improved as compared with the product of the comparative example.
Claims (4)
層とを備え、上記封止樹脂層が、透明性エポキシ樹脂を
主成分とする透明性エポキシ樹脂組成物硬化体と、この
硬化体中に硬化体全体の１０〜７０重量％の割合で分散
された粒子径０．１μｍ以下のシリカ微粒子とから構成
されていることを特徴とする光半導体装置。1. A semiconductor element and a sealing resin layer for sealing the semiconductor element, wherein the sealing resin layer is a cured transparent epoxy resin composition containing a transparent epoxy resin as a main component, and the cured body. An optical semiconductor device, comprising: silica fine particles having a particle diameter of 0.1 μm or less dispersed in the body at a ratio of 10 to 70% by weight of the entire cured body.
が、液状の透明性エポキシ樹脂中においてアルコキシシ
ランを反応させることにより合成されて上記透明性エポ
キシ樹脂中に分散しているものである請求項１記載の光
半導体装置。2. Silica fine particles having a particle diameter of 0.1 μm or less are synthesized by reacting an alkoxysilane in a liquid transparent epoxy resin and are dispersed in the transparent epoxy resin. 1. The optical semiconductor device described in 1.
ランおよびメチルトリエトキシシランの少なくとも一方
である請求項２記載の光半導体装置。3. The optical semiconductor device according to claim 2, wherein the alkoxysilane is at least one of tetraethoxysilane and methyltriethoxysilane.
ポキシ樹脂組成物。 （Ａ）粒子径０．１μｍ以下のシリカ微粒子が分散され
ている透明性エポキシ樹脂。 （Ｂ）酸無水物系硬化剤。 （Ｃ）硬化触媒。4. An epoxy resin composition containing the following components (A) to (C). (A) A transparent epoxy resin in which fine silica particles having a particle diameter of 0.1 μm or less are dispersed. (B) Acid anhydride curing agent. (C) Curing catalyst.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3133418A JPH0563240A (en) | 1991-05-08 | 1991-05-08 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3133418A JPH0563240A (en) | 1991-05-08 | 1991-05-08 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0563240A true JPH0563240A (en) | 1993-03-12 |
Family
ID=15104310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3133418A Pending JPH0563240A (en) | 1991-05-08 | 1991-05-08 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0563240A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005206664A (en) * | 2004-01-21 | 2005-08-04 | Nitto Denko Corp | Semiconductor sealing resin composition |
| JP2006241230A (en) * | 2005-03-01 | 2006-09-14 | Nitto Denko Corp | Hardened article of epoxy resin composition, its manufacturing process and optical semiconductor device using the same |
-
1991
- 1991-05-08 JP JP3133418A patent/JPH0563240A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005206664A (en) * | 2004-01-21 | 2005-08-04 | Nitto Denko Corp | Semiconductor sealing resin composition |
| JP2006241230A (en) * | 2005-03-01 | 2006-09-14 | Nitto Denko Corp | Hardened article of epoxy resin composition, its manufacturing process and optical semiconductor device using the same |
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