JPH0562833A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH0562833A JPH0562833A JP22071191A JP22071191A JPH0562833A JP H0562833 A JPH0562833 A JP H0562833A JP 22071191 A JP22071191 A JP 22071191A JP 22071191 A JP22071191 A JP 22071191A JP H0562833 A JPH0562833 A JP H0562833A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film
- magnetic
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、長尺物のフレキシブル
磁気テープに適用して好適な磁気記録媒体、特に面内磁
気記録型の磁気記録媒体に係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium suitable for application to a long flexible magnetic tape, and more particularly to a longitudinal magnetic recording type magnetic recording medium.
【０００２】[0002]
【従来の技術】従来、高密度面内磁気記録媒体の薄膜磁
性材料としては、ＣｏＮｉＣｒ，ＣｏＣｒＴａ，ＣｏＣ
ｒＰｔ等が報告されている。これら磁性材料による磁性
薄膜を、１５００（Ｏｅ）程度以上に高い面内保磁力に
形成するには、そのスパッタによる磁性薄膜の成膜時に
おける基体温度は、１００〜３００℃という比較的高い
温度にする必要があると共に、数１０〜数１００Ｖ程度
のバイアス電圧を基体に印加する必要がある。2. Description of the Related Art Conventionally, CoNiCr, CoCrTa and CoC have been used as thin film magnetic materials for high density longitudinal magnetic recording media.
rPt and the like have been reported. In order to form a magnetic thin film of these magnetic materials with an in-plane coercive force as high as about 1500 (Oe) or higher, the substrate temperature at the time of forming the magnetic thin film by sputtering should be a relatively high temperature of 100 to 300 ° C. In addition to this, it is necessary to apply a bias voltage of about several tens to several hundreds of V to the substrate.
【０００３】したがってこの場合、磁気記録媒体、例え
ば磁気テープの基体、即ち磁性薄膜の挟持体として、安
価なポリエチレンテレフタレート（ＰＥＴ）は、これの
耐熱性が低いことから使用できず、また、その製造装置
を大掛りになるという問題がある。このような成膜時の
基体温度を高める必要がある等の課題を解決し、充分な
飽和磁束密度或いは（及び）高い保磁力を有する垂直磁
化膜としての磁性薄膜は、例えば本出願人の出願に係わ
る特開平２−７４０１２号公報及び特開平２−７３５１
０号公報で提案された。これらは、ＣｏＰｔＢＯ系、或
いはＣｏＰｔＢＭ1 Ｏ系（但しＭ1 は、Ｔｉ，Ｚｒ，
Ｖ，Ｃｒ……等の１種以上）より成る磁性薄膜であっ
て、垂直磁気記録媒体としての磁気特性はすぐれている
ものの、面内磁気記録媒体として特に例えばコンタクト
プリントのメタルテープ用マスターテープ等としては充
分な面内保磁力が得られていない。Therefore, in this case, inexpensive polyethylene terephthalate (PET) cannot be used as the base material of the magnetic recording medium, for example, the magnetic tape, that is, the holding body of the magnetic thin film, because of its low heat resistance, and its production. There is a problem that the device becomes bulky. A magnetic thin film as a perpendicular magnetization film having a sufficient saturation magnetic flux density and / or a high coercive force, which solves the problems such as the need to raise the substrate temperature during film formation, is disclosed in, for example, the applicant's application. JP-A-2-74012 and JP-A-2-7351
It was proposed in No. 0 publication. These are CoPtBO-based or CoPtBM 1 O-based (where M 1 is Ti, Zr,
V, Cr, etc.), which is a magnetic thin film and has excellent magnetic characteristics as a perpendicular magnetic recording medium, but is particularly useful as an in-plane magnetic recording medium, for example, a master tape for a metal tape for contact printing. As a result, a sufficient in-plane coercive force is not obtained.
【０００４】これに対し、本出願人は先に特開平３−８
６９１５号公報において、ＣｏＰｔＢＭ2 Ｏ系（但しＭ
2 はＴｉ，Ｚｒ，Ｖ，Ｃｒ……等の１種以上）より成る
磁性薄膜を基体上に斜めに蒸着することによって、成膜
時の基体温度を高めることなく、また比較的厚い膜厚で
も高い保磁力Ｈｃ、ないしは高い飽和磁束密度、高い異
方性磁界を得ることができる磁気記録媒体を提案した。On the other hand, the present applicant has previously filed Japanese Patent Application Laid-Open No. 3-8.
6915, CoPtBM 2 O system (however, M
(2 is at least one kind of Ti, Zr, V, Cr ...) By obliquely depositing a magnetic thin film on the substrate, the temperature of the substrate during film formation is not increased, and a relatively thick film is formed. We have proposed a magnetic recording medium capable of obtaining a high coercive force Hc, a high saturation magnetic flux density, and a high anisotropic magnetic field.
【０００５】また更に本出願人は、先に特開平２−７３
５１１号公報において、ＣｏＰｔ系磁性薄膜の下地層と
して、Ｔｉ，Ｚｒ，Ｖ，Ｃｒ……等の非磁性配向制御層
を設けることによって、基体温度を高めることなく、ま
た磁性層の膜厚を大とした場合においても垂直磁性記録
媒体として優れた磁気特性を示す媒体を得ている。Furthermore, the applicant of the present invention previously disclosed in Japanese Patent Laid-Open No. 2-73.
No. 511, by providing a non-magnetic orientation control layer such as Ti, Zr, V, Cr ... As an underlayer of a CoPt magnetic thin film, it is possible to increase the film thickness of the magnetic layer without increasing the substrate temperature. Even in such a case, a medium exhibiting excellent magnetic characteristics as a perpendicular magnetic recording medium is obtained.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、上述したよ
うな基体温度を高めることなく、充分高い面内保磁力が
得られ、更に、特に保磁力角形比が小さくノイズの低減
化をはかる磁気記録媒体を得ることを目的とする。SUMMARY OF THE INVENTION According to the present invention, a sufficiently high in-plane coercive force can be obtained without increasing the substrate temperature as described above, and further, the magnetic coercive force squareness ratio is small and noise is reduced. The purpose is to obtain a recording medium.
【０００７】[0007]
【課題を解決するための手段】本発明は、図１に示すよ
うにフレキシブル基体１を移動させながら、この基体１
上に、その組成式が、 （Ｃｏa Ｐｔb Ｂc ）100-x Ｏx ，（ａ，ｂ，ｃ，ｘは
それぞれ原子％）で示され、この組成式において、 ａ＝１００−ｂ−Ｃ ０≦ｂ≦１５ ０．１≦ｃ≦３０ ０＜ｘ≦１５ なる磁性薄膜を成膜する。また、本発明においては、上
述の磁性薄膜の下地膜としてＣｒ薄膜を被着する。According to the present invention, as shown in FIG. 1, a flexible substrate 1 is moved while the substrate 1 is being moved.
Above, the composition formula, (Co a Pt b B c ) 100-x O x, indicated (a, b, c, x, respectively atomic%), in this composition formula, a = 100-b- A magnetic thin film of C 0 ≤ b ≤ 15 0.1 ≤ c ≤ 30 0 <x ≤ 15 is formed. Further, in the present invention, a Cr thin film is deposited as a base film of the above magnetic thin film.
【０００８】[0008]
【作用】このような本発明による磁気記録媒体は、室温
程度で、フレキシブル基体を加熱することなく、スパッ
タすることができる。したがってＰＥＴのように耐熱性
に乏しいフレキシブル基体を用いることができるもので
あり、この磁気記録媒体の磁性薄膜は面内保磁力Ｈｃh
が１５００（Ｏｅ）以上の面内磁化膜として得られた。The magnetic recording medium according to the present invention can be sputtered at room temperature without heating the flexible substrate. Therefore, a flexible substrate having poor heat resistance such as PET can be used, and the magnetic thin film of this magnetic recording medium has an in-plane coercive force Hc h.
Was obtained as an in-plane magnetized film of 1500 (Oe) or more.
【０００９】因みに、４πＭｓ（ｋＧ）＞Ｈｋ（ｋＯ
ｅ）のとき、面内磁化膜としての特性を有すると考えら
れるが、本発明による磁気記録媒体では４πＭｓ≧８ｋ
Ｇが得られた。また、特に上述の磁性薄膜の下地膜とし
てＣｒを被着することによって、Ｈｃh ≧１５００とす
ることができた。Incidentally, 4πMs (kG)> Hk (kO
In the case of e), it is considered that the magnetic recording medium has characteristics as an in-plane magnetized film, but the magnetic recording medium according to the present invention has 4πMs ≧ 8k.
G was obtained. Further, in particular by depositing a Cr as a base film of the magnetic thin film described above, it was possible to Hc h ≧ 1500.
【００１０】[0010]
【実施例】本発明においては、図１に示すように、フレ
キシブル基体、例えばＰＥＴシート、ないしはテープ等
の長尺薄膜基体１を、円筒状キャンロール２の周面を繞
って０．１〜３００ｍ／分の速度で移行させつつこれに
磁性薄膜をスパッタによって成膜する例えばマグネトロ
ン型スパッタ電極を持つ連続成膜装置によって形成す
る。図１において４はスパッタ位置を制御する遮蔽板を
示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, as shown in FIG. 1, a flexible substrate, for example, a long thin film substrate 1 such as a PET sheet or a tape, is attached to the peripheral surface of a cylindrical can roll 2 by 0.1 to 0.1. The magnetic thin film is formed by sputtering while moving at a speed of 300 m / min, for example, by a continuous film forming apparatus having a magnetron type sputtering electrode. In FIG. 1, reference numeral 4 indicates a shield plate for controlling the sputtering position.
【００１１】そして、特に磁性薄膜として、その組成
を、（Ｃｏa Ｐｔb Ｂc ）100-x Ｏx （ａ，ｂ，ｃ，ｘ
は原子％）の組成式において、 ａ＝１００−ｂ−ｃ、 ０≦ｂ≦５０、 ０．１≦ｃ≦３０、 ０＜ｘ≦１５ となる組成をもって厚さ５００〜１００００Å、好まし
くは１０００〜５０００Åにスパッタする。In particular, as a magnetic thin film, its composition is (Co a Pt b B c ) 100-x O x (a, b, c, x
In the composition formula of a), a = 100-bc, 0 ≦ b ≦ 50, 0.1 ≦ c ≦ 30, 0 <x ≦ 15 and a thickness of 500 to 10000 Å, preferably 1000 to Sputter to 5000Å.
【００１２】実施例１ 上述のマグネトロン型スパッタ電極を持つ連続成膜装置
を用いて、Ｃｏ71Ｐｔ 22Ｂ7 の組成を有し、１７５ｍｍ
×２５０ｍｍの長方形を有し、厚さ３ｍｍの合金ターゲ
ット３を用いて、ＰＥＴ基体１を図１に示すように、キ
ャンロール２を繞って１．０ｍ／分の速度で移行させ
て、アルゴンと酸素の混合ガス中にスパッタして厚さ１
０００Åの磁性薄膜を基体１上に成膜した。このときの
スパッタ条件は、 バックグランド真空度：９×１０-4Ｐａ 基体温度：室温 スパッタ投入電力：ＤＣ２．２ｋＷ スパッタ全ガス圧：２．０Ｐａ 全ガス流量：４５０ＳＣＣＭ とした。Example 1 A continuous film forming apparatus having the magnetron type sputtering electrode described above.
Using Co71Pt twenty twoB7Has a composition of 175 mm
An alloy target with a thickness of 3 mm and a rectangle of × 250 mm
1 and the PET substrate 1 as shown in FIG.
Swivel the roll 2 and move it at a speed of 1.0 m / min.
And sputter it into a mixed gas of argon and oxygen to a thickness of 1
A magnetic thin film of 000Å was formed on the substrate 1. At this time
Sputtering conditions are background vacuum degree: 9 × 10-FourPa substrate temperature: room temperature Sputtering power: DC 2.2 kW Sputtering total gas pressure: 2.0 Pa Total gas flow rate: 450 SCCM.
【００１３】この実施例１において、酸素分圧Ｐｏ2 を
変化させて面内保磁力Ｈｃh とＰｏ 2 との関係をみた。
その測定結果を図２に示す。図２中、曲線２Ａ及び２Ｂ
は、それぞれそのスパッタに際して、フレキシブル基体
１の移行方向及びスパッタ範囲を、図１において矢印Ａ
及びＢをもって示す方向を範囲に、つまり、図において
時計方向に、かつターゲット３と正対する領域と、これ
以上のスパッタ可能領域に及んで形成した場合を示す。In the first embodiment, the oxygen partial pressure Po2To
In-plane coercive force HchAnd Po 2I saw a relationship with.
The measurement result is shown in FIG. In FIG. 2, curves 2A and 2B
The flexible substrate
The transition direction and the sputtering range of No. 1 are indicated by arrow A in FIG.
And B are within the range, that is, in the figure
A region facing the target 3 in the clockwise direction and this
The case where the film is formed so as to extend to the above sputterable region is shown.
【００１４】これによれば、面内保磁力Ｈｃh ≧１５０
０（Ｏｅ）とするにはＰｏ2 は３．５〜４．５Ｐａ程度
とするが、磁性薄膜の形成に当たって下地膜としてＣｒ
２００〜２０００Åの厚さでスパッタするときは、Ｈｃ
h ≧１５００（Ｏｅ）とし得る酸素分圧Ｐｏ2 範囲は広
げられる。According to this, the in-plane coercive force Hc h ≧ 150
To obtain 0 (Oe), Po 2 is set to about 3.5 to 4.5 Pa, but Cr is used as a base film when forming the magnetic thin film.
When sputtering with a thickness of 200 to 2000Å, Hc
The oxygen partial pressure Po 2 range where h ≧ 1500 (Oe) can be expanded.
【００１５】次に、この場合の実施例について説明す
る。 実施例２ 実施例１と同様の条件で磁性薄膜を作成したが、その成
膜に先立ってＣｒを図１の装置によってアルゴンガスの
みを使用して５００Åの厚さにスパッタした。Next, an embodiment in this case will be described. Example 2 A magnetic thin film was prepared under the same conditions as in Example 1, but prior to the film formation, Cr was sputtered to a thickness of 500 Å using only the argon gas by the apparatus shown in FIG.
【００１６】この実施例２において、酸素分圧Ｐｏ2 を
変化させて面内保磁力Ｈｃh とＰｏ 2 との関係をみた。
その測定結果を図３に示す。In the second embodiment, the oxygen partial pressure Po2To
In-plane coercive force HchAnd Po 2I saw a relationship with.
The measurement result is shown in FIG.
【００１７】図３中、曲線３Ａ，３Ｂ及び３Ｃは、それ
ぞれそのスパッタに際して、フレキシブル基体１の移行
方向及びスパッタ範囲を、図１において矢印Ａ，Ｂ及び
Ｃをもって示す方向を範囲に、つまり、図において時計
方向に、かつターゲット３と正対する領域と、これ以上
のスパッタ可能領域に及んで形成した場合及び反時計方
向に移行させ領域Ｂと同等の領域Ｃをもってスパッタし
た場合を示す。Curves 3A, 3B and 3C in FIG. 3 indicate the transition direction of the flexible substrate 1 and the sputtering range in the sputtering, respectively, in the directions indicated by arrows A, B and C in FIG. 3A shows the case where the region is formed in the clockwise direction and the region directly facing the target 3 and the sputterable region beyond this, and the case where the region is shifted counterclockwise and the region C equivalent to the region B is sputtered.
【００１８】これによれば、実施例１の場合とほぼ同条
件下では面内保磁力Ｈｃh ≧２０００（Ｏｅ）とするこ
とができ、Ｈｃh ≧１５００（Ｏｅ）とするに、実施例
１に比して選べる酸素分圧Ｐｏ2 範囲は広げられる。According to this, the in-plane coercive force Hc h ≧ 2000 (Oe) can be obtained under almost the same conditions as in the case of the first embodiment, and Hc h ≧ 1500 (Oe). The oxygen partial pressure Po 2 range that can be selected is widened.
【００１９】更に、上述の実施例１及び２において、図
１で示した矢印Ａ，Ｂ及びＣで示した方向の移行及びス
パッタ領域で磁性薄膜をＰＥＴフィルム上に形成した場
合の各面内磁化曲線を図４にそれぞれＡ，Ｂ，Ｃとして
示す。Ｓ* は各例の保磁力角形比で、図５に示すように
面内保磁力Ｈｃh における磁化曲線の接線と残台磁化Ｍ
ｒとの交点の磁界ｈを面内保磁力で除した値Ｓ* ＝ｈ／
Ｈｃh で与えられ、この値が小さいほどノイズが小さく
なる、即ちＳ／Ｎが向上する。Further, in the above-mentioned Examples 1 and 2, in-plane magnetization when a magnetic thin film is formed on the PET film in the transition and sputter regions in the directions indicated by arrows A, B and C shown in FIG. The curves are shown in FIG. 4 as A, B and C, respectively. S * is a coercive force squareness ratio of each example, tangent Zandai magnetization M of the magnetization curve in the plane coercivity Hc h as shown in FIG. 5
A value obtained by dividing the magnetic field h at the intersection with r by the in-plane coercive force S * = h /
It is given by Hc h , and the smaller this value is, the smaller the noise is, that is, the S / N is improved.
【００２０】図４より明らかなように、スパッタ態様が
Ａ，Ｂ，Ｃのいずれかであっても、特性上差程影響はな
いが、Ｃｒの下地膜を形成するときは、Ｓ* の減少がは
かられることが分かる。上述したところから明らかなよ
うに、本発明によれば、基体温度と高めることなく室温
で、したがってＰＥＴ基体１を用いて、しかも１０００
０Åに及ぶ磁性薄膜層を形成する場合でも、高い面内保
磁力Ｈｃh 、即ち１５００（Ｏｅ）以上に、またＣｒ下
地膜を設ける場合は２０００（Ｏｅ）にすることができ
た。尚、Ｃｒ下地膜は、その厚さを２００〜２０００Å
に選定することが望まれる。これは２００Å未満ではＣ
ｒ下地膜を設けることによるＨｃh の向上が殆どみられ
ず、２０００Åを超えるとフレキシブル性を阻害して来
ることに因る。As is clear from FIG. 4, there is no significant difference in characteristics whether the sputtering mode is A, B, or C, but when forming a Cr underlayer, S * decreases. You can see that it comes off. As is apparent from the above description, according to the present invention, the temperature of the substrate is not increased and the temperature of the substrate is therefore increased.
Even when a magnetic thin film layer reaching 0 Å was formed, it was possible to obtain a high in-plane coercive force Hc h , that is, 1500 (Oe) or more, and 2000 (Oe) when a Cr underlayer was provided. The Cr underlayer has a thickness of 200 to 2000Å
It is desirable to select This is C at less than 200Å
The improvement of Hc h due to the provision of the r base film is hardly seen, and when it exceeds 2000 Å, the flexibility is impaired.
【００２１】[0021]
【発明の効果】上述したように本発明構成によれば、そ
のスパッタによる磁性薄膜に当たって、基体温度を上げ
ることなく、また基体にバイアス電圧を印加することな
く、５００〜１００００Åの厚さの磁性薄膜を１５００
（Ｏｅ）以上の面内保磁力をもって更に下地膜としてＣ
ｒを形成するときは、２０００（Ｏｅ）以上の面内保磁
力を有し、保磁力角形比Ｓ* の小さい磁気記録媒体を得
ることができる。As described above, according to the structure of the present invention, the magnetic thin film of 500 to 10000 Å is hit without hitting the magnetic thin film by sputtering and without applying a bias voltage to the substrate. 1500
With an in-plane coercive force of (Oe) or more, C as a base film
When r is formed, a magnetic recording medium having an in-plane coercive force of 2000 (Oe) or more and a small coercive force squareness ratio S * can be obtained.
【００２２】そして、その基体１としては安価なＰＥＴ
フレキシブル基体１の使用が可能となることによって、
また基体の移行によって磁性薄膜を作成し得ることによ
って量産化に好適となり、磁気記録媒体の低廉化をはか
ることができる。The substrate 1 is inexpensive PET
By making it possible to use the flexible substrate 1,
Further, since the magnetic thin film can be formed by moving the substrate, it is suitable for mass production, and the cost of the magnetic recording medium can be reduced.
【００２３】尚、磁性薄膜の成膜に当たって基体１の移
行下で行うことによってその面内保磁力の向上がはから
れる理由は明確ではないが、斜め蒸着の効果が生じてい
るものと思われる。The reason why the in-plane coercive force can be improved by performing the film formation of the magnetic thin film while the substrate 1 is being moved is not clear, but it is considered that the oblique evaporation effect is produced. ..
【図１】本発明による磁気記録媒体を得る成膜作業の説
明図である。FIG. 1 is an explanatory diagram of a film forming operation for obtaining a magnetic recording medium according to the present invention.
【図２】本発明による磁気記録媒体の面内保磁力と酸素
分圧の関係の測定曲線図である。FIG. 2 is a measurement curve diagram of a relationship between in-plane coercive force and oxygen partial pressure of the magnetic recording medium according to the present invention.
【図３】本発明による磁気記録媒体の面内保磁力と酸素
分圧の関係の測定曲線図である。FIG. 3 is a measurement curve diagram of a relationship between in-plane coercive force and oxygen partial pressure of the magnetic recording medium according to the present invention.
【図４】本発明の実施例の磁化曲線図である。FIG. 4 is a magnetization curve diagram of an example of the present invention.
【図５】保磁力角形比の説明に供する磁化曲線図であ
る。FIG. 5 is a magnetization curve diagram for explaining a coercive force squareness ratio.
１ フレキシブル基体 ２ キャンロール ３ ターゲット 1 flexible substrate 2 can roll 3 target
Claims (2)
基体上に、 その組成式が（Ｃｏa Ｐｔb Ｂc ）100-x Ｏx （ａ，
ｂ，ｃ，ｘは原子％）で示され、この組成式において、 ａ＝１００−ｂ−ｃ、 ０≦ｂ≦１５、 ０．１≦ｃ≦３０、 ０＜ｘ≦１５ なる磁性薄膜を成膜したことを特徴とする磁気記録媒
体。1. A composition having a composition formula of (Co a Pt b B c ) 100-x O x (a,
b, c, x are expressed in atomic%), and in this composition formula, a = 100-bc, 0 ≦ b ≦ 15, 0.1 ≦ c ≦ 30, 0 <x ≦ 15 A magnetic recording medium having a film.
した請求項１に記載の磁気記録媒体。2. The magnetic recording medium according to claim 1, wherein a Cr thin film is deposited as a base film of the magnetic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22071191A JPH0562833A (en) | 1991-08-30 | 1991-08-30 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22071191A JPH0562833A (en) | 1991-08-30 | 1991-08-30 | Magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0562833A true JPH0562833A (en) | 1993-03-12 |
Family
ID=16755310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22071191A Pending JPH0562833A (en) | 1991-08-30 | 1991-08-30 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0562833A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5859032A (en) * | 1996-03-18 | 1999-01-12 | Nishino; Chikao | Pyridine derivative, anti-ulcer drug, and antibacterial drug |
-
1991
- 1991-08-30 JP JP22071191A patent/JPH0562833A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5859032A (en) * | 1996-03-18 | 1999-01-12 | Nishino; Chikao | Pyridine derivative, anti-ulcer drug, and antibacterial drug |
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