JP4716534B2 - Magnetic recording medium - Google Patents
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- JP4716534B2 JP4716534B2 JP07434199A JP7434199A JP4716534B2 JP 4716534 B2 JP4716534 B2 JP 4716534B2 JP 07434199 A JP07434199 A JP 07434199A JP 7434199 A JP7434199 A JP 7434199A JP 4716534 B2 JP4716534 B2 JP 4716534B2
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- intermediate layer
- magnetic recording
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- recording medium
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Description
【０００１】
【発明の属する技術分野】
本発明はハードディスク装置の記録媒体として好適な磁気記録媒体に関する。
【０００２】
【従来の技術】
近年、磁気記録媒体は高記録密度化がなされており、そのために低ノイズの媒体が要求されている。従来、媒体ノイズを低減する方法の一つとして、磁気記録膜を複数の磁性層と各磁性層間の磁気的結合を弱めるために各磁性層間に中間層を設けて多層構造とすることが、特開昭６３−１４６２１９やＩＥＥＥ ＴＲＡＮＳＡＣＴＩＯＮＳ ＯＮ ＭＡＧＮＥＴＩＣＳ，２６（５），２７００（１９９０）に開示されている。また、高記録密度化のために高保磁力を得る手段として下地層としてＢ２構造を有するＮｉＡｌを用いることが、ＩＥＥＥ ＴＲＡＮＳＡＣＴＩＯＮＳ ＯＮ ＭＡＧＮＥＴＩＣＳ，３０（６），３９５１（１９９４）、ヨーロッパ公開特許第７０４８３９号公報に報告されている。
【０００３】
上記多層構造の磁気記録膜をもつ磁気記録媒体に用いる中間層として、前記特開昭６３−１４６２１９においてＡｌ2Ｏ3、ＳｉＯ2またはＣｒ膜が検討され低ノイズ化は図られているが、今後ＧＭＲヘッドを使用した場合のノイズ低減としては不充分である。また、前記ヨーロッパ公開特許第７０４８３９号公報では下地層としてＮｉＡｌが検討されているが、磁気記録膜を複数の磁性層と各磁性層間に配置された磁気的結合を弱めるための中間層とからなる多層構造とすることの検討はなされていない。
【０００４】
【発明が解決しようとする課題】
本発明の目的は、媒体ノイズが大幅に低減された高密度の記録再生が可能な磁気記録媒体を提供することにある。
【０００５】
【課題を解決するための手段】
本発明は前述の課題を解決すべくなされたものであり、非磁性基板上に下地層を介して形成されている磁気記録膜を有する磁気記録媒体であって、前記磁気記録膜が複数の磁性層とそれら各磁性層間に形成されている中間層とからなり、前記磁性層がＣｏ，Ｃｒ，Ｐｔ及びＴａを含む合金からなり、前記中間層はＮｉＡｌＲｕからなる中間層であり、前記中間層の膜厚が５Åから２０Åであることを特徴とする磁気記録媒体を提供する。
【０００６】
上記中間層の材料としては、Ｂ２構造を有するＮｉＡｌＲｕを用いることができる。
【０００７】
中間層の膜厚が薄すぎる場合はノイズ低減の効果が充分でない。中間層の膜厚が厚すぎる場合はノイズ低減の効果は認め難く、また、保磁力の著しい低下や磁気記録媒体として必要な分解能、ＰＷ５０（孤立再生波半値幅）といった特性が悪くなる。これらの点から中間層の膜厚は５〜２０Åである。
【０００８】
本発明における非磁性基板は、アルミニウム合金やガラス、結晶化ガラスなどの材料からなる基板から選ぶことができる。本発明における下地層としてＣｒまたはＣｒ合金を採用することができる。Ｃｒ合金としては、ＣｒＭｏ、ＣｒＷ、ＣｒＴｉ、ＣｒＶまたはＣｒＭｎなどを用いることができる。
【０００９】
また、本発明において前記ガラスまたは結晶化ガラスなどの材料からなる非磁性基板を用いる場合には、該基板上に結晶構造がＢ２構造を有する材料からなるシード層を設け、その上に前記下地層を介して前記磁気記録膜を設けた構成をとることが特に好ましい。
【００１０】
上記シード層として用いられるＢ２構造を有する材料として、ＮｉＡｌ、ＮｉＡｌＲｕ、ＮｉＡｌＮｄ、ＮｉＡｌＣｒ、ＮｉＡｌＰｔまたはＮｉＡｌＰｄを用いることができる。
【００１１】
前記ガラスまたは結晶化ガラスなどの材料からなる非磁性基板上に上記シード層を設けることにより、その上のＣｒまたはＣｒ合金下地層の粒成長と膜生成が適切に制御され、それにより該下地層の上に形成される磁気記録膜の粒成長と膜生成が適切に制御される。
【００１２】
本発明における磁気記録膜を構成する磁性層は、Ｃｏ，Ｃｒ，Ｐｔ及びＴａを含む合金からなる。
【００１３】
上記した磁気記録膜の上にさらに保護膜、潤滑膜をこの順に設けることにより、本発明の磁気記録媒体を得ることができる。保護膜としては、例えば炭素系の材料、潤滑膜としては例えばパーフルオロポリエーテル系の潤滑剤を用いることができる。
【００１４】
【実施例】
［例１（実施例）および例２（比較例）］
スパッタリング室内を到達真空度１×１０-6Ｔｏｒｒまで排気した後、５ｍＴｏｒｒのＡｒ雰囲気かつ基板温度２２０℃で基板バイアスを−２００Ｖ印加し、下記のように成膜を行った。
【００１５】
テクスチャ処理の施されたＮｉＰ／Ａｌ基板上に、Ｃｒ85Ｍｏ15（各成分量は原子％）からなるターゲットを用いマグネトロンスパッタリング法によりＣｒＭｏ層（厚さ：３００Å）を形成し下地層とした。
【００１６】
次に同上のマグネトロンスパッタリング法により、前記ＣｒＭｏ層上にＣｏ71Ｃｒ17Ｔａ5Ｐｔ7（各成分量は原子％）からなる第一磁性層を１１０Åの厚さで形成し、次いで、その上にＮｉ45Ａｌ50Ｒｕ5（各成分量は原子％）ターゲットを用い、ＮｉＡｌＲｕ中間層を厚さ５〜７０Åの範囲で形成した。さらにその上に同様な操作によりＣｏ71Ｃｒ17Ｔａ5Ｐｔ7からなる第二磁性層を１１０Åの厚さで形成した後、その上に炭素系保護膜、潤滑膜をこの順で設けて本発明の磁気記録媒体の例１の試料とした。Ｘ線回折法により上記ＮｉＡｌＲｕ中間層はＢ２構造であることを同定した。
【００１７】
また、中間層としてＣｒからなる中間層を厚さ５〜７０Åの範囲で形成した他は例１の試料と同じ構成をもつ磁気記録媒体を同様な方法で作製し例２の試料とした。
【００１８】
図１に例１のＮｉＡｌＲｕ中間層の膜厚および例２のＣｒ中間層の膜厚を０〜５０Åの範囲で変化させたときのトータルノイズに対する信号出力の比（Ｓ／Ｎｔ）の変化を示す。ＮｉＡｌＲｕ中間層の場合には膜厚が０から増すと３０Åまでの範囲において、Ｓ／Ｎｔが改善されることがわかる。またＣｒ中間層の場合と比較してもＳ／Ｎｔが改善されることがわかる。
【００１９】
図２に例１のＮｉＡｌＲｕ中間層の膜厚および例２のＣｒ中間層の膜厚を０〜７０Åの範囲で変化させたときの保磁力（Ｈｃ）の変化を示す。ＮｉＡｌＲｕ中間層の場合にはＣｒ中間層に比べ保磁力（Ｈｃ）の低下は小さいことがわかる。
【００２０】
上記したように、磁気記録膜をＣｏ系合金磁性層／Ｂ２構造ＮｉＡｌＲｕ中間層／Ｃｏ系合金磁性層の構成とし、かつ該Ｂ２構造ＮｉＡｌＲｕ中間層の膜厚を３〜３０Å、特に３〜２０Åの範囲で適切に選ぶことにより、Ｓ／Ｎｔの顕著な改善が得られ、その値はＣｒ中間層の場合に比較して大きい。この選択により保磁力（Ｈｃ）は多少減少するが、その程度は小さく、高記録密度を達成するための支障となるほどではない。Ｃｒ中間層の場合にはＳ／Ｎｔの改善が小さいうえに保磁力（Ｈｃ）の減少が著しく大きい。
【００２１】
Ｓ／Ｎｔの改善が顕著であるＮｉＡｌＲｕ中間層膜厚１５Åでの電磁変換特性を表１に示す。ＮｉＡｌＲｕ中間層膜厚１５Åにおいて、Ｎｍｅｄｉａ（媒体ノイズ）、Ｓ／Ｎｔ、Ｓ／Ｎｍ（媒体ノイズに対する信号出力の比）のみでなく、分解能、ＰＷ５０（孤立再生波半値幅）において、Ｃｒ中間層を用いた場合に比べ著しく優れていることが明らかである。
【００２２】
【表１】
【発明の効果】
本発明の磁気記録媒体は、前記磁気記録膜が複数の磁性層とそれら各磁性層間に形成されている中間層とからなり、前記磁性層がＣｏ，Ｃｒ，Ｐｔ及びＴａを含む合金からなり、前記中間層はＮｉＡｌＲｕからなる中間層であり、前記中間層の膜厚が５Åから２０Åである構成をとることにより、ノイズが著しく低減する優れた特徴を有する。
【００２４】
また、特にガラスまたは結晶化ガラスからなる非磁性基板を用いる場合、該基板上に結晶構造がＢ２構造を有する材料からなるシード層を設け、その上にＣｒまたはＣｒ合金からなる下地層を介して上記した複層構成の磁気記録膜を設けることにより、ノイズが著しく低減する優れた特徴を有する。
【図面の簡単な説明】
【図１】例１のＮｉＡｌＲｕ中間層および例２のＣｒ中間層の膜厚とＳ／Ｎｔの関係を示すグラフ。
【図２】例１のＮｉＡｌＲｕ中間層および例２のＣｒ中間層の膜厚とＨｃの関係を示すグラフ。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a magnetic recording medium suitable as a recording medium for a hard disk device.
[0002]
[Prior art]
In recent years, magnetic recording media have been increased in recording density, and therefore, low noise media are required. Conventionally, as one method for reducing medium noise, a magnetic recording film has a multilayer structure in which an intermediate layer is provided between each magnetic layer in order to weaken the magnetic coupling between the plurality of magnetic layers and each magnetic layer. No. 63-146219 and IEEE TRANSACTIONS ON MAGNETICS, 26 (5), 2700 (1990). Further, as a means for obtaining a high coercive force in order to increase the recording density, it is possible to use NiAl having a B2 structure as an underlayer. Has been reported.
[0003]
As an intermediate layer used in a magnetic recording medium having a magnetic recording film having the above-mentioned multilayer structure, Al 2 O 3 , SiO 2 or Cr film has been studied in Japanese Patent Laid-Open No. 63-146219, and noise reduction has been achieved. This is insufficient for noise reduction when a GMR head is used. In addition, although NiAl is studied as an underlayer in the above-mentioned European Patent No. 704839, the magnetic recording film is composed of a plurality of magnetic layers and an intermediate layer disposed between the magnetic layers to weaken the magnetic coupling. No consideration has been given to a multilayer structure.
[0004]
[Problems to be solved by the invention]
An object of the present invention is to provide a magnetic recording medium capable of high-density recording / reproduction with greatly reduced medium noise.
[0005]
[Means for Solving the Problems]
The present invention has been made to solve the above-described problems, and is a magnetic recording medium having a magnetic recording film formed on a nonmagnetic substrate via an underlayer, wherein the magnetic recording film has a plurality of magnetic recording films. Each of the magnetic layers, and the magnetic layer is made of an alloy containing Co, Cr, Pt, and Ta. The intermediate layer is an intermediate layer made of NiAlRu. A magnetic recording medium having a film thickness of 5 to 20 mm is provided.
[0006]
As a material for the intermediate layer, NiAlRu having a B2 structure can be used.
[0007]
If the thickness of the intermediate layer is too thin, the noise reduction effect is not sufficient. When the film thickness of the intermediate layer is too thick, it is difficult to recognize the effect of noise reduction, and the characteristics such as remarkably reduced coercive force, resolution required as a magnetic recording medium, and PW50 (isolated reproduction wave half width) are deteriorated. From these points, the film thickness of the intermediate layer is 5 to 20 mm.
[0008]
The nonmagnetic substrate in the present invention can be selected from substrates made of materials such as aluminum alloy, glass and crystallized glass. Cr or a Cr alloy can be employed as the underlayer in the present invention. As the Cr alloy, CrMo, CrW, CrTi, CrV, CrMn, or the like can be used.
[0009]
In the present invention, when a nonmagnetic substrate made of a material such as glass or crystallized glass is used, a seed layer made of a material having a crystal structure of B2 is provided on the substrate, and the underlayer is formed thereon. It is particularly preferable to adopt a configuration in which the magnetic recording film is provided via
[0010]
NiAl, NiAlRu, NiAlNd, NiAlCr, NiAlPt or NiAlPd can be used as the material having the B2 structure used as the seed layer.
[0011]
By providing the seed layer on a non-magnetic substrate made of a material such as glass or crystallized glass, grain growth and film formation of the Cr or Cr alloy underlayer thereon are appropriately controlled, whereby the underlayer The grain growth and film formation of the magnetic recording film formed on the substrate are appropriately controlled.
[0012]
The magnetic layer constituting the magnetic recording film in the present invention is made of an alloy containing Co, Cr, Pt and Ta.
[0013]
By further providing a protective film and a lubricating film in this order on the magnetic recording film described above, the magnetic recording medium of the present invention can be obtained. As the protective film, for example, a carbon-based material can be used, and as the lubricating film, for example, a perfluoropolyether-based lubricant can be used.
[0014]
【Example】
[Example 1 (Example) and Example 2 (Comparative Example)]
After evacuating the sputtering chamber to an ultimate vacuum of 1 × 10 −6 Torr, a substrate bias of −200 V was applied in an Ar atmosphere of 5 mTorr and a substrate temperature of 220 ° C. to form a film as follows.
[0015]
On a textured NiP / Al substrate, a CrMo layer (thickness: 300 mm) was formed by a magnetron sputtering method using a target composed of Cr 85 Mo 15 (the amount of each component was atomic%) to form an underlayer.
[0016]
Next, a first magnetic layer made of Co 71 Cr 17 Ta 5 Pt 7 (each component amount is atomic%) is formed on the CrMo layer with a thickness of 110 mm by the magnetron sputtering method described above. Using a Ni 45 Al 50 Ru 5 (each component amount is atomic%) target, a NiAlRu intermediate layer was formed in a thickness range of 5 to 70 mm. Furthermore, after the second magnetic layer made of Co 71 Cr 17 Ta 5 Pt 7 is formed with a thickness of 110 mm by the same operation, a carbon-based protective film and a lubricating film are provided on the second magnetic layer in this order. The sample of Example 1 of the magnetic recording medium was used. The NiAlRu intermediate layer was identified as having a B2 structure by X-ray diffraction.
[0017]
A magnetic recording medium having the same structure as the sample of Example 1 was prepared in the same manner as the sample of Example 2 except that an intermediate layer made of Cr was formed in the range of 5 to 70 mm as the intermediate layer.
[0018]
FIG. 1 shows changes in the ratio of signal output to total noise (S / Nt) when the thickness of the NiAlRu intermediate layer of Example 1 and the thickness of the Cr intermediate layer of Example 2 are changed in the range of 0 to 50 mm. . In the case of the NiAlRu intermediate layer, it can be seen that when the film thickness is increased from 0, the S / Nt is improved in the range up to 30 mm. It can also be seen that S / Nt is improved as compared with the case of the Cr intermediate layer.
[0019]
FIG. 2 shows changes in coercive force (Hc) when the film thickness of the NiAlRu intermediate layer of Example 1 and the film thickness of the Cr intermediate layer of Example 2 are changed in the range of 0 to 70 mm. In the case of the NiAlRu intermediate layer, it can be seen that the decrease in coercive force (Hc) is smaller than that of the Cr intermediate layer.
[0020]
As described above, the magnetic recording film has a structure of Co-based alloy magnetic layer / B2 structure NiAlRu intermediate layer / Co-based alloy magnetic layer, and the B2 structure NiAlRu intermediate layer has a thickness of 3 to 30 mm, particularly 3 to 20 mm. By selecting appropriately in the range, a significant improvement in S / Nt is obtained, which is greater than in the case of the Cr intermediate layer. This selection slightly reduces the coercivity (Hc), but the degree is small and does not hinder the achievement of high recording density. In the case of the Cr intermediate layer, the improvement of S / Nt is small and the reduction of the coercive force (Hc) is remarkably large.
[0021]
Table 1 shows the electromagnetic conversion characteristics at a NiAlRu intermediate layer thickness of 15 mm, where the S / Nt improvement is significant. At a NiAlRu intermediate layer thickness of 15 mm, not only Nmedia (medium noise), S / Nt, S / Nm (ratio of signal output to medium noise) but also resolution, PW50 (isolated reproduction wave half width) It is clear that it is remarkably superior to that used.
[0022]
[Table 1]
【The invention's effect】
In the magnetic recording medium of the present invention, the magnetic recording film comprises a plurality of magnetic layers and intermediate layers formed between the magnetic layers, and the magnetic layer comprises an alloy containing Co, Cr, Pt and Ta, The intermediate layer is an intermediate layer made of NiAlRu, and has an excellent feature that noise is remarkably reduced by adopting a configuration in which the thickness of the intermediate layer is 5 to 20 mm.
[0024]
In particular, when a non-magnetic substrate made of glass or crystallized glass is used, a seed layer made of a material having a crystal structure of B2 is provided on the substrate, and an underlayer made of Cr or Cr alloy is provided on the seed layer. Providing the magnetic recording film having the multilayer structure described above has an excellent feature that noise is remarkably reduced.
[Brief description of the drawings]
FIG. 1 is a graph showing the relationship between the thickness of a NiAlRu intermediate layer of Example 1 and a Cr intermediate layer of Example 2 and S / Nt.
FIG. 2 is a graph showing the relationship between the thickness of the NiAlRu intermediate layer of Example 1 and the Cr intermediate layer of Example 2 and Hc.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07434199A JP4716534B2 (en) | 1998-03-20 | 1999-03-18 | Magnetic recording medium |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-72673 | 1998-03-20 | ||
| JP1998072673 | 1998-03-20 | ||
| JP7267398 | 1998-03-20 | ||
| JP07434199A JP4716534B2 (en) | 1998-03-20 | 1999-03-18 | Magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11328646A JPH11328646A (en) | 1999-11-30 |
| JP4716534B2 true JP4716534B2 (en) | 2011-07-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07434199A Expired - Lifetime JP4716534B2 (en) | 1998-03-20 | 1999-03-18 | Magnetic recording medium |
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| JP (1) | JP4716534B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6821652B1 (en) | 1999-06-08 | 2004-11-23 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
| US6689495B1 (en) | 1999-06-08 | 2004-02-10 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
| US6753101B1 (en) | 1999-06-08 | 2004-06-22 | Fujitsu Limited | Magnetic recording medium, magnetic storage apparatus, recording method and method of producing magnetic recording medium |
| US6602612B2 (en) | 1999-06-08 | 2003-08-05 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
| US6645646B1 (en) | 1999-06-08 | 2003-11-11 | Fujitsu Limited | Magnetic recording medium and magnetic storage apparatus |
| JPWO2002045081A1 (en) * | 2000-11-29 | 2004-04-15 | 富士通株式会社 | Magnetic recording medium and magnetic storage device |
| US6761982B2 (en) | 2000-12-28 | 2004-07-13 | Showa Denko Kabushiki Kaisha | Magnetic recording medium, production process and apparatus thereof, and magnetic recording and reproducing apparatus |
| US6852430B2 (en) | 2001-03-02 | 2005-02-08 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic thin film media with a pre-seed layer of CrTi |
| US6593009B2 (en) | 2001-03-02 | 2003-07-15 | Hitachi Global Storage Technologies Netherlands N.V. | Magnetic thin film media with a pre-seed layer of CrTi |
| US6808830B2 (en) | 2001-12-28 | 2004-10-26 | Showa Denko K.K. | Magnetic recording medium, production process and apparatus thereof, and magnetic recording and reproducing apparatus |
-
1999
- 1999-03-18 JP JP07434199A patent/JP4716534B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JPH11328646A (en) | 1999-11-30 |
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