JPH0556852B2 - - Google Patents
Info
- Publication number
- JPH0556852B2 JPH0556852B2 JP61147380A JP14738086A JPH0556852B2 JP H0556852 B2 JPH0556852 B2 JP H0556852B2 JP 61147380 A JP61147380 A JP 61147380A JP 14738086 A JP14738086 A JP 14738086A JP H0556852 B2 JPH0556852 B2 JP H0556852B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- substrate
- substrate temperature
- trisilane
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 43
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 19
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 27
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14738086A JPS633414A (ja) | 1986-06-24 | 1986-06-24 | シリコン膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14738086A JPS633414A (ja) | 1986-06-24 | 1986-06-24 | シリコン膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS633414A JPS633414A (ja) | 1988-01-08 |
JPH0556852B2 true JPH0556852B2 (zh) | 1993-08-20 |
Family
ID=15428933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14738086A Granted JPS633414A (ja) | 1986-06-24 | 1986-06-24 | シリコン膜の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS633414A (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2889924B2 (ja) * | 1989-06-30 | 1999-05-10 | 日本電信電話株式会社 | 薄膜電界効果トランジスタの製法 |
JP3121131B2 (ja) * | 1991-08-09 | 2000-12-25 | アプライド マテリアルズ インコーポレイテッド | 低温高圧のシリコン蒸着方法 |
US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
EP1421607A2 (en) | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Improved process for deposition of semiconductor films |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US6815007B1 (en) | 2002-03-04 | 2004-11-09 | Taiwan Semiconductor Manufacturing Company | Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film |
JP5005170B2 (ja) | 2002-07-19 | 2012-08-22 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
US7294582B2 (en) | 2002-07-19 | 2007-11-13 | Asm International, N.V. | Low temperature silicon compound deposition |
US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
US7629270B2 (en) | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
US7253084B2 (en) | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
US7553516B2 (en) | 2005-12-16 | 2009-06-30 | Asm International N.V. | System and method of reducing particle contamination of semiconductor substrates |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US7851307B2 (en) | 2007-08-17 | 2010-12-14 | Micron Technology, Inc. | Method of forming complex oxide nanodots for a charge trap |
US9054206B2 (en) | 2007-08-17 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59126680A (ja) * | 1983-01-11 | 1984-07-21 | Mitsui Toatsu Chem Inc | 非晶質シリコン太陽電池およびその製法 |
-
1986
- 1986-06-24 JP JP14738086A patent/JPS633414A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59126680A (ja) * | 1983-01-11 | 1984-07-21 | Mitsui Toatsu Chem Inc | 非晶質シリコン太陽電池およびその製法 |
Also Published As
Publication number | Publication date |
---|---|
JPS633414A (ja) | 1988-01-08 |
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Legal Events
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EXPY | Cancellation because of completion of term |