JPH0556852B2 - - Google Patents

Info

Publication number: JPH0556852B2
Authority: JP; Japan
Prior art keywords: chamber; substrate; substrate temperature; trisilane; silicon film
Prior art date: 1986-06-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP61147380A

Other languages

English (en)

Japanese (ja)

Other versions

JPS633414A (ja

Inventor

Yutaka Hayashi

Mitsuyuki Yamanaka

Mitsuo Umemura

Satoshi Okazaki

Ryoji Takada

Masaaki Kamya

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shin Etsu Chemical Co Ltd

Seiko Epson Corp

Seiko Instruments Inc

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Shin Etsu Chemical Co Ltd

Seiko Epson Corp

Seiko Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-24

Filing date

1986-06-24

Publication date

1993-08-20

1986-06-24 Application filed by Agency of Industrial Science and Technology, Shin Etsu Chemical Co Ltd, Seiko Epson Corp, Seiko Instruments Inc filed Critical Agency of Industrial Science and Technology

1986-06-24 Priority to JP14738086A priority Critical patent/JPS633414A/ja

1988-01-08 Publication of JPS633414A publication Critical patent/JPS633414A/ja

1993-08-20 Publication of JPH0556852B2 publication Critical patent/JPH0556852B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 43
VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 19
238000002230 thermal chemical vapour deposition Methods 0.000 claims description 14
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
229910052710 silicon Inorganic materials 0.000 claims description 13
239000010703 silicon Substances 0.000 claims description 13
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
238000000034 method Methods 0.000 claims description 8
238000010438 heat treatment Methods 0.000 claims description 7
229910000077 silane Inorganic materials 0.000 claims description 6
238000004519 manufacturing process Methods 0.000 claims description 4
239000002994 raw material Substances 0.000 claims description 4
239000010408 film Substances 0.000 description 27
238000000151 deposition Methods 0.000 description 19
230000008021 deposition Effects 0.000 description 19
239000007789 gas Substances 0.000 description 16
229910021417 amorphous silicon Inorganic materials 0.000 description 10
239000010409 thin film Substances 0.000 description 9
229910052739 hydrogen Inorganic materials 0.000 description 8
239000001257 hydrogen Substances 0.000 description 8
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
238000010586 diagram Methods 0.000 description 7
238000006243 chemical reaction Methods 0.000 description 6
238000001816 cooling Methods 0.000 description 4
230000003287 optical effect Effects 0.000 description 4
238000005268 plasma chemical vapour deposition Methods 0.000 description 4
PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
239000010453 quartz Substances 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
238000010521 absorption reaction Methods 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
238000007664 blowing Methods 0.000 description 2
238000003795 desorption Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000002245 particle Substances 0.000 description 2
150000004756 silanes Chemical class 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
238000009835 boiling Methods 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
239000003085 diluting agent Substances 0.000 description 1
238000010790 dilution Methods 0.000 description 1
239000012895 dilution Substances 0.000 description 1
238000010574 gas phase reaction Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000031700 light absorption Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
239000002184 metal Substances 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
230000009257 reactivity Effects 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
239000011856 silicon-based particle Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
230000000087 stabilizing effect Effects 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
230000007847 structural defect Effects 0.000 description 1
230000002123 temporal effect Effects 0.000 description 1
238000005979 thermal decomposition reaction Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

JP14738086A 1986-06-24 1986-06-24 シリコン膜の製造方法 Granted JPS633414A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP14738086A JPS633414A (ja)	1986-06-24	1986-06-24	シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14738086A JPS633414A (ja)	1986-06-24	1986-06-24	シリコン膜の製造方法

Publications (2)

Publication Number	Publication Date
JPS633414A JPS633414A (ja)	1988-01-08
JPH0556852B2 true JPH0556852B2 (zh)	1993-08-20

Family

ID=15428933

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14738086A Granted JPS633414A (ja)	1986-06-24	1986-06-24	シリコン膜の製造方法

Country Status (1)

Country	Link
JP (1)	JPS633414A (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2889924B2 (ja) *	1989-06-30	1999-05-10	日本電信電話株式会社	薄膜電界効果トランジスタの製法
JP3121131B2 (ja) *	1991-08-09	2000-12-25	アプライドマテリアルズインコーポレイテッド	低温高圧のシリコン蒸着方法
US5614257A (en) *	1991-08-09	1997-03-25	Applied Materials, Inc	Low temperature, high pressure silicon deposition method
EP1421607A2 (en)	2001-02-12	2004-05-26	ASM America, Inc.	Improved process for deposition of semiconductor films
US7026219B2 (en)	2001-02-12	2006-04-11	Asm America, Inc.	Integration of high k gate dielectric
US6815007B1 (en)	2002-03-04	2004-11-09	Taiwan Semiconductor Manufacturing Company	Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
JP5005170B2 (ja)	2002-07-19	2012-08-22	エーエスエムアメリカインコーポレイテッド	超高品質シリコン含有化合物層の形成方法
US7294582B2 (en)	2002-07-19	2007-11-13	Asm International, N.V.	Low temperature silicon compound deposition
US7186630B2 (en)	2002-08-14	2007-03-06	Asm America, Inc.	Deposition of amorphous silicon-containing films
US7092287B2 (en)	2002-12-18	2006-08-15	Asm International N.V.	Method of fabricating silicon nitride nanodots
US7629270B2 (en)	2004-08-27	2009-12-08	Asm America, Inc.	Remote plasma activated nitridation
US7253084B2 (en)	2004-09-03	2007-08-07	Asm America, Inc.	Deposition from liquid sources
US7966969B2 (en)	2004-09-22	2011-06-28	Asm International N.V.	Deposition of TiN films in a batch reactor
US7427571B2 (en)	2004-10-15	2008-09-23	Asm International, N.V.	Reactor design for reduced particulate generation
US7674726B2 (en)	2004-10-15	2010-03-09	Asm International N.V.	Parts for deposition reactors
US7553516B2 (en)	2005-12-16	2009-06-30	Asm International N.V.	System and method of reducing particle contamination of semiconductor substrates
US7691757B2 (en)	2006-06-22	2010-04-06	Asm International N.V.	Deposition of complex nitride films
US7851307B2 (en)	2007-08-17	2010-12-14	Micron Technology, Inc.	Method of forming complex oxide nanodots for a charge trap
US9054206B2 (en)	2007-08-17	2015-06-09	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device
US7833906B2 (en)	2008-12-11	2010-11-16	Asm International N.V.	Titanium silicon nitride deposition
US9443730B2 (en)	2014-07-18	2016-09-13	Asm Ip Holding B.V.	Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en)	2014-07-18	2017-12-05	Asm Ip Holding B.V.	Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en)	2017-03-31	2019-10-29	Asm Ip Holding B.V.	Semiconductor device with amorphous silicon filled gaps and methods for forming

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59126680A (ja) *	1983-01-11	1984-07-21	Mitsui Toatsu Chem Inc	非晶質シリコン太陽電池およびその製法

1986
- 1986-06-24 JP JP14738086A patent/JPS633414A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59126680A (ja) *	1983-01-11	1984-07-21	Mitsui Toatsu Chem Inc	非晶質シリコン太陽電池およびその製法

Also Published As

Publication number	Publication date
JPS633414A (ja)	1988-01-08

Legal Events

Date	Code	Title	Description
2004-07-20	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2004-09-17	S533	Written request for registration of change of name	Free format text: JAPANESE INTERMEDIATE CODE: R313533
2004-09-29	R350	Written notification of registration of transfer	Free format text: JAPANESE INTERMEDIATE CODE: R350
2005-07-12	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2006-06-24	EXPY	Cancellation because of completion of term

Publication	Publication Date	Title
JPH0556852B2 (zh)	1993-08-20
JP2954039B2 (ja)	1999-09-27	ＳｉＧｅ薄膜の成膜方法
JP2592238B2 (ja)	1997-03-19	薄膜トランジスタの製造方法
JPH04219927A (ja)	1992-08-11	半導体装置の製造方法
JP3596188B2 (ja)	2004-12-02	薄膜トランジスタの製造方法
JPH03289140A (ja)	1991-12-19	半導体装置の製造方法
Lim et al.	1996	Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF4 SiH4 H2
JP3214505B2 (ja)	2001-10-02	半導体装置の製造方法
JP3221129B2 (ja)	2001-10-22	半導体装置の製法
JPH04146619A (ja)	1992-05-20	薄膜成長法
JP3494467B2 (ja)	2004-02-09	半導体薄膜の形成方法
JP3084395B2 (ja)	2000-09-04	半導体薄膜の堆積方法
JPH04318973A (ja)	1992-11-10	薄膜トランジスタ及びその製造方法
JPH06333822A (ja)	1994-12-02	半導体装置
Ohshita et al.	1991	Reaction of Si2H2 molecule on a silicon surface
JPH04342121A (ja)	1992-11-27	水素化非晶質シリコン薄膜の製造方法
JPH0319340A (ja)	1991-01-28	半導体装置の製造方法
JPH04257225A (ja)	1992-09-11	絶縁膜形成方法
JP3461819B2 (ja)	2003-10-27	半導体結晶膜の製造方法
JP3055158B2 (ja)	2000-06-26	炭化珪素半導体膜の製造方法
JPH0462073B2 (zh)	1992-10-05
JPH0645257A (ja)	1994-02-18	半導体薄膜形成方法
KR100233146B1 (ko)	1999-12-01	다결정 실리콘의 제조 방법
JPH05109630A (ja)	1993-04-30	半導体薄膜の形成方法
Zhang et al.	2006	Silicon‐based narrow‐bandgap thin‐film semiconductor materials: polycrystalline SiGe prepared by reactive thermal CVD