JPH054974B2 - - Google Patents
Info
- Publication number
- JPH054974B2 JPH054974B2 JP59149816A JP14981684A JPH054974B2 JP H054974 B2 JPH054974 B2 JP H054974B2 JP 59149816 A JP59149816 A JP 59149816A JP 14981684 A JP14981684 A JP 14981684A JP H054974 B2 JPH054974 B2 JP H054974B2
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- curing
- cured
- polymerizable
- molecular weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920001721 polyimide Polymers 0.000 claims description 71
- 239000004642 Polyimide Substances 0.000 claims description 63
- 239000010409 thin film Substances 0.000 claims description 16
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 229920005575 poly(amic acid) Polymers 0.000 claims description 8
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 238000001723 curing Methods 0.000 description 48
- 239000002904 solvent Substances 0.000 description 31
- 239000003054 catalyst Substances 0.000 description 25
- 239000000126 substance Substances 0.000 description 25
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 22
- 230000035882 stress Effects 0.000 description 20
- 238000001035 drying Methods 0.000 description 18
- VZUHQRBBQSLSHS-SSZFMOIBSA-N Isoimide Chemical compound C1=CC(Br)=CC=C1\N=C/1C(CCCC2)=C2C(=O)O\1 VZUHQRBBQSLSHS-SSZFMOIBSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 239000002253 acid Substances 0.000 description 11
- 150000003949 imides Chemical group 0.000 description 11
- 238000011282 treatment Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000003197 catalytic effect Effects 0.000 description 8
- 238000004132 cross linking Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 238000006555 catalytic reaction Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 238000001029 thermal curing Methods 0.000 description 6
- 238000007259 addition reaction Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- -1 amide ester Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000005272 metallurgy Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 238000005194 fractionation Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000005453 ketone based solvent Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000008107 starch Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- QQGMRDZQQKVAIA-UHFFFAOYSA-N 1,2,3-triethynylbenzene Chemical compound C#CC1=CC=CC(C#C)=C1C#C QQGMRDZQQKVAIA-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 241001428214 Polyides Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012024 dehydrating agentsâ Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- HMJCMPMWWUMMHG-UHFFFAOYSA-N dicyclohexylcyanamide Chemical compound C1CCCCC1N(C#N)C1CCCCC1 HMJCMPMWWUMMHG-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Formation Of Insulating Films (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
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Claims (1)
- ãç¹èš±è«æ±ã®ç¯å²ã ïŒ ããã«åºåã¯ã¢ã»ãã¬ã³åºãéã®äž¡æ«ç«¯åºã«
çµåãããŠããããªã¢ããé žããã®å¯Ÿå¿ããããª
ã¢ãããšã¹ãã«ãããªã€ãœã€ããåã¯æ··åç©ãã
æããå¹³åååéã2000ä¹è³4000ã®ç¯å²ã®äœåå
éã§ããéåå¯èœãªéæå æ§ã®ãªãªãŽããŒãæºå
ããå·¥çšã äžèšéæå æ§ã®ãªãªãŽããŒã®æº¶æ¶²ãé»åçŽ åçš
åºæ¿è¡šé¢ã«å¡ä»ããŠéæå æ§éåå¯èœèèã圢æ
ããå·¥çšã äžèšèèãã觊åªã®ååšã®äžã«250â以äžã§é
ç±åŠçãåã¯æŸå°ç·ã«æãããŠäœæž©ç¡¬åããããš
å ±ã«äžæ¬¡å æ¶æ©æ§é ã®ã€ããåèèã«è»¢æããã
å·¥çšã ããæããè湿æ§ã§äœå¿åã®ããªã€ããèªé»äœ
èèã®åœ¢ææ¹æ³ã
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55673183A | 1983-11-30 | 1983-11-30 | |
US556731 | 1995-07-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60119730A JPS60119730A (ja) | 1985-06-27 |
JPH054974B2 true JPH054974B2 (ja) | 1993-01-21 |
Family
ID=24222610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59149816A Granted JPS60119730A (ja) | 1983-11-30 | 1984-07-20 | ããªã€ããèªå°äœèèã®åœ¢ææ¹æ³ |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0144661B1 (ja) |
JP (1) | JPS60119730A (ja) |
DE (1) | DE3485758T2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60120723A (ja) * | 1983-11-30 | 1985-06-28 | ã€ã³ã¿âãã·ã§ãã«ãããžãã¹ããã·âã³ãºãã³âãã¬âã·ã§ã³ | é»åè£ çœ® |
US4568601A (en) * | 1984-10-19 | 1986-02-04 | International Business Machines Corporation | Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures |
JPH069222B2 (ja) * | 1986-01-07 | 1994-02-02 | æ¥ç«åæå·¥æ¥æ ªåŒäŒç€Ÿ | å€å±€é ç·æ§é ã®è£œé æ³ |
US8945677B2 (en) * | 2011-01-25 | 2015-02-03 | Aspen Aerogels, Inc. | Electronic device manufacture using low-k dielectric materials |
CN105304469B (zh) * | 2015-09-25 | 2018-03-27 | 京äžæ¹ç§æéå¢è¡ä»œæéå ¬åž | äžç§èé °äºèºåºæ¿ãå ¶å¶å€æ¹æ³åææ§æŸç€ºåš |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638038A (en) * | 1979-08-01 | 1981-04-13 | Toray Ind Inc | Photosensitive polyimide precursor |
JPS5645915A (en) * | 1979-09-25 | 1981-04-25 | Hitachi Ltd | Photosensitive polymer composition |
JPS59187025A (ja) * | 1983-04-06 | 1984-10-24 | Hitachi Ltd | æå¿æ§éåäœçµæç© |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4164458A (en) * | 1977-03-07 | 1979-08-14 | Allied Chemical Corporation | Production of radiation crosslinked polymeric compositions using diacetylenes |
EP0019391B1 (en) * | 1979-05-12 | 1982-10-06 | Fujitsu Limited | Improvement in method of manufacturing electronic device having multilayer wiring structure |
GB2107926A (en) * | 1981-10-13 | 1983-05-05 | Monolithic Memories Inc | Semiconductor device and method of manufacture |
JPS60120723A (ja) * | 1983-11-30 | 1985-06-28 | ã€ã³ã¿âãã·ã§ãã«ãããžãã¹ããã·âã³ãºãã³âãã¬âã·ã§ã³ | é»åè£ çœ® |
-
1984
- 1984-07-20 JP JP59149816A patent/JPS60119730A/ja active Granted
- 1984-10-19 DE DE8484112629T patent/DE3485758T2/de not_active Expired - Fee Related
- 1984-10-19 EP EP84112629A patent/EP0144661B1/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5638038A (en) * | 1979-08-01 | 1981-04-13 | Toray Ind Inc | Photosensitive polyimide precursor |
JPS5645915A (en) * | 1979-09-25 | 1981-04-25 | Hitachi Ltd | Photosensitive polymer composition |
JPS59187025A (ja) * | 1983-04-06 | 1984-10-24 | Hitachi Ltd | æå¿æ§éåäœçµæç© |
Also Published As
Publication number | Publication date |
---|---|
JPS60119730A (ja) | 1985-06-27 |
EP0144661A2 (en) | 1985-06-19 |
EP0144661B1 (en) | 1992-06-03 |
DE3485758D1 (de) | 1992-07-09 |
DE3485758T2 (de) | 1993-02-04 |
EP0144661A3 (en) | 1988-10-05 |
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