JPH0547910A - Electrostatic attraction equipment - Google Patents
Electrostatic attraction equipmentInfo
- Publication number
- JPH0547910A JPH0547910A JP23093991A JP23093991A JPH0547910A JP H0547910 A JPH0547910 A JP H0547910A JP 23093991 A JP23093991 A JP 23093991A JP 23093991 A JP23093991 A JP 23093991A JP H0547910 A JPH0547910 A JP H0547910A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ionized
- ultraviolet rays
- electrode
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置等に応用さ
れる静電吸着装置に係る。より詳細には被吸着物と電極
の間に介在する絶縁体内の残留電荷をすみやかに消去さ
せる手段を具備することにより、迅速、確実かつ安全に
被吸着物を電極から離脱させることが可能な静電吸着装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic attraction device applied to a semiconductor device or the like. More specifically, by providing a means for promptly erasing the residual charge in the insulator interposed between the object to be adsorbed and the electrode, it is possible to remove the object to be adsorbed from the electrode quickly, reliably and safely. The present invention relates to an electroadsorption device.
【０００２】[0002]
【従来の技術】従来、静電吸着装置における被吸着物の
離脱技術の主なものとしては機械的手段によって強制的
に被吸着物を剥離せしめるものと電気的手段によって残
留電荷を消去するものとに区別される。2. Description of the Related Art Heretofore, the main techniques for removing an object to be adsorbed in an electrostatic adsorption device are one in which the object to be adsorbed is forcibly peeled off by mechanical means, and the remaining charge is erased by electrical means. To be distinguished.
【０００３】それらの手段のうち代表例を以下に示す。 （１）機械的手段による離脱機構： （１ー１）吸着電極面から突出可能なピンもしくはピス
トン等の機械的離脱力付与手段によって強制的に剥離さ
せるもの。Typical examples of these means are shown below. (1) Disengagement mechanism by mechanical means: (1-1) A mechanism for forcibly peeling off by a mechanical disengagement force imparting means such as a pin or a piston capable of projecting from the adsorption electrode surface.
【０００４】（１ー２）圧電素子もしくは超音波振動子
を吸着電極面内に埋め込み、これらの素子の作動をもっ
て離脱力付与手段とするもの。(1-2) A piezoelectric element or an ultrasonic vibrator is embedded in the surface of the suction electrode, and the operation of these elements serves as a detachment force imparting means.
【０００５】（１ー３）高圧力のガスを吸着電極及び被
吸着物の隙間に充填させ、ガス圧の膨張力をもって離脱
力付与手段とするもの。 （２）電気的手段による離脱機構： （２ー１）吸着電極と被吸着物に印加する電圧の極性を
反転することにより、両者に介在する絶縁物の残留電荷
を消去させて吸着力の消滅をはかるもの。(1-3) A high-pressure gas is filled in the gap between the adsorption electrode and the object to be adsorbed, and the expansion force of the gas pressure is used as the separating force applying means. (2) Detachment mechanism by electrical means: (2-1) By reversing the polarity of the voltage applied to the adsorption electrode and the object to be adsorbed, the residual charge of the insulating material interposed therebetween is erased and the adsorption force disappears. What to measure.
【０００６】（２ー２）吸着電極と被吸着物の電位を接
地電位にし、吸着力の消滅をはかるもの。(2-2) The electric potential of the adsorption electrode and the object to be adsorbed is set to the ground potential to eliminate the adsorption force.
【０００７】[0007]
【発明が解決しようとする課題】しかし、上記の各種従
来技術にはいずれも原理的もしくは実用上次のような問
題があった。 （１）機械的手段による強制剥離における問題点： （１ー１）突出可能なピンもしくはピストン等の機械的
機構はそれらの制御部を伴って静電吸着装置の構造を複
雑化するのみならず、機械的可動部及び摺動部はパーテ
ィクル（微少な発塵粒子）の発生源となり、潤滑剤の使
用とともに真空中で静電吸着装置を応用する場合、例え
ばシリコンウエハー等の被吸着物に対し著しい汚染をも
たらし、このため高性能半導体製造装置に適用すること
は不適当であった。However, each of the above-mentioned various conventional techniques has the following problems in principle or in practical use. (1) Problems in forced peeling by mechanical means: (1-1) The mechanical mechanism such as the projectable pin or piston not only complicates the structure of the electrostatic attraction device with its control unit. , Mechanically moving parts and sliding parts become sources of generation of particles (small dust particles), and when applying electrostatic chucking device in vacuum with the use of lubricant, for example, for objects to be attracted such as silicon wafers. It causes significant pollution, which makes it unsuitable for application in high-performance semiconductor manufacturing equipment.
【０００８】（１ー２）圧電素子や超音波振動子を吸着
電極に内蔵させた場合、電極の実効吸着面積が減少し、
かつ埋め込まれた圧電素子や超音波振動子と電極の吸着
面を同一平面に形成し、維持することが困難であるばか
りでなく両者の熱膨張率の不均衡により昇温、冷却時の
吸着・保持の能力が阻害されることにより、装置の信頼
性を低下させる原因となった。(1-2) When a piezoelectric element or an ultrasonic vibrator is built in the adsorption electrode, the effective adsorption area of the electrode decreases,
Moreover, it is not only difficult to form and maintain the adsorption surface of the embedded piezoelectric element or ultrasonic transducer and the electrode on the same plane, but also because of the imbalance of the thermal expansion coefficient of both, adsorption / heating at the time of cooling / cooling This hinders the holding ability, which causes a decrease in the reliability of the device.
【０００９】（１ー３）ガス圧の膨張力により残留電荷
の吸着力に抗して被吸着物を離脱させる場合、被吸着物
がすでにシリコンウエハのような計量の物体においては
離脱の瞬間、ガスの瞬時膨張によってウエハが吹き上げ
られ、著しくはウエハの破損に至る難点があった。他
方、かかる現象を回避するためガス圧を低く抑えた場合
は、離脱までに要する長時間が実用上の障害になった。 （２）電気的手段による残留電荷消去の問題点： （２ー１）印加電圧の極性反転により絶縁中の残留電荷
を消去しようとする場合、ただ１回の極性反転によって
残留電荷を過不足なしの完全消去に成功することは困難
である。これを克服するため印加電圧の極性を繰り返し
反転させつつ、徐々にその値を小さくしてゆき、最終的
にゼロにするというプロセスが不可避であった。したが
ってこの極性反転法のみによるならば、剥離を瞬時に実
行することができず、数秒間の程度の時間を不可避的に
必要とした。(1-3) When the object to be adsorbed is separated from the object to be adsorbed by the expansion force of the gas pressure against the adsorption force of the residual charges, the object to be adsorbed is already separated from the object to be weighed such as a silicon wafer, The wafer was blown up by the instantaneous expansion of the gas, and there was a problem that the wafer was significantly damaged. On the other hand, when the gas pressure is kept low in order to avoid such a phenomenon, the long time required for separation becomes a practical obstacle. (2) Problems of erasing residual charge by electric means: (2-1) When attempting to erase the residual charge in the insulation by reversing the polarity of the applied voltage, there is no excess or deficiency of the residual charge by only one polarity reversal. It is difficult to succeed in the complete erasure of. In order to overcome this, it was inevitable that the polarity of the applied voltage was repeatedly inverted, the value was gradually decreased, and finally it was made zero. Therefore, if only the polarity reversal method is used, the peeling cannot be executed instantaneously, and a time of several seconds is inevitably required.
【００１０】（２ー２）静電吸着にかかる総ての部分の
電位を接地電位にすることは自然現象の理にかなう自明
の手段であるが、この手段においては接地の瞬間から所
定の時定数をもって流れる放電電流及びこれに続いて時
間と共に減少しながら相当永続する、いわゆる吸収電流
が存する。このため装置が接地電位に到達し、完全にク
ーロン力が消滅するまで３〜５秒間待たねばならなかっ
た。(2-2) It is an obvious means to make a natural phenomenon reasonable to set the potentials of all parts involved in electrostatic adsorption to the ground potential. There is a discharge current that flows with a constant and this is followed by a so-called absorption current, which decays over time and is fairly permanent. Therefore, it was necessary to wait 3 to 5 seconds until the apparatus reached the ground potential and the Coulomb force was completely eliminated.
【００１１】機械的手段及び電気的手段はいずれもそれ
ぞれが以上のような問題を有していたため、これら両者
を組み合わせ、相互に補完した手段も提案されていた
が、それらは総て静電吸着装置を一段と複雑化、大型化
させ、ひいては製作コストの高騰を招く結果となった。Since both the mechanical means and the electric means have the problems as described above, there have been proposed means which are a combination of the both and complement each other, but they are all electrostatic adsorption. As a result, the device becomes more complicated and larger, resulting in higher production costs.
【００１２】本発明は上記従来技術の問題点と限界を解
決して、確実かつ安全な吸着・離脱を可能ならしめ、動
作が迅速であり、かつ簡単な構造によって高性能半導体
製造装置にも適用可能な静電吸着装置を提供することを
目的とする。The present invention solves the above-mentioned problems and limitations of the prior art and enables reliable and safe adsorption / desorption, and is applied to a high-performance semiconductor manufacturing apparatus with a quick operation and a simple structure. It is an object to provide a possible electrostatic adsorption device.
【００１３】[0013]
【課題を解決するための手段】本発明の静電吸着装置
は、吸着電極及び被吸着物の雰囲気に導入されるガスに
紫外線を照射する照射部とを具備したことを特徴とす
る。The electrostatic adsorption device of the present invention is characterized by comprising an adsorption electrode and an irradiation unit for irradiating the gas introduced into the atmosphere of the object to be adsorbed with ultraviolet rays.
【００１４】[0014]
【作用】本発明では、紫外線を照射したガスを吸着電極
及び被吸着物の雰囲気に噴射する。紫外線を照射された
ガス分子は紫外線の光量子からエネルギーを得て励起状
態へ遷移し、正イオンと電子に電離する。この結果電離
状態のガスと電子流を吸着電極及び絶縁物に照射すると
離脱を阻害している残留電荷が電離ガスの電荷によって
中和され、被吸着物を離脱することができる。ここで噴
射ガスは残留電荷を中和する量であることが必要かつ充
分であって、特に噴射圧力を大きくする必要は全くな
い。In the present invention, the gas irradiated with ultraviolet rays is injected into the atmosphere of the adsorption electrode and the object to be adsorbed. Gas molecules irradiated with ultraviolet rays obtain energy from the photons of ultraviolet rays, transition to an excited state, and ionize into positive ions and electrons. As a result, when the adsorption electrode and the insulating material are irradiated with the ionized gas and the electron flow, the residual charges that obstruct the detachment are neutralized by the charges of the ionized gas, and the adsorbed substance can be detached. Here, it is necessary and sufficient for the injection gas to be an amount that neutralizes the residual charge, and there is no particular need to increase the injection pressure.
【００１５】しかし、電離ガスによる残留電荷の消去が
進行するにつれて、吸着力が微弱になってゆき、ついに
噴射ガス流が被吸着物に及ぼす力の方が相対的に大とな
った時点で残留電荷が完全には中和されない段階でも電
極からの円滑な剥離を自然な形態で促す効果を結果とし
て生ずる。However, as the elimination of the residual charge by the ionized gas progresses, the adsorption force becomes weak, and finally when the force exerted by the jet gas flow on the object to be adsorbed becomes relatively large. Even if the charge is not completely neutralized, the effect of promoting the smooth detachment from the electrode in a natural form results.
【００１６】本発明で、ガスの導入管の少なくとも内表
面を絶縁物で形成することは、紫外線照射によって電離
したガス分子がガス導入管を通過する際管壁を通して電
荷が失われることを阻止する上で有効な手段である。In the present invention, forming at least the inner surface of the gas introducing tube with an insulator prevents the gas molecules ionized by the irradiation of ultraviolet rays from losing the electric charge through the tube wall when passing through the gas introducing tube. This is an effective means.
【００１７】静電吸着装置の用途は、搬送装置類全般、
印刷機械、ロボット等広汎にわたっているが、本発明で
は特に高性能半導体装置、例えばＲＩＥ（Reactive Ion
Etching）、ＣＶＤ(Chemical Vapor Deposition), Pla
sma Sputter/Asher, Photolithography, Epitaxial Gro
wth 等の製造プロセスに適用することが主目的であっ
て、これらの場合静電吸着の利点が特に強く発揮でき
る。前記プロセスにおける雰囲気清浄度の要請を満たす
ガスであって紫外線照射によって効率よく電離されるも
のとして窒素ガスもしくはアルゴンガスもしくはこれら
両者の混合ガスを採用することが効果的である。The electrostatic chucking device is used for general conveying devices,
Although it is widely used in printing machines, robots, etc., in the present invention, particularly high-performance semiconductor devices such as RIE (Reactive Ion) are used.
Etching), CVD (Chemical Vapor Deposition), Pla
sma Sputter / Asher, Photolithography, Epitaxial Gro
Its main purpose is to apply it to manufacturing processes such as wth, and in these cases, the advantage of electrostatic attraction can be exerted particularly strongly. It is effective to use nitrogen gas, argon gas, or a mixed gas of both of them as a gas that satisfies the requirement of atmospheric cleanliness in the above process and is efficiently ionized by ultraviolet irradiation.
【００１８】一方、前記窒素ガス、アルゴンガスもしく
は窒素・アルゴン混合ガスの中に酸素ガス及び水蒸気が
混在している場合、紫外線照射によって酸素ガスはオゾ
ンに変換される。このオゾンは前記半導体製造プロセス
において水蒸気の存在下で半導体基板上に自然酸化膜を
生成させるという好ましくない作用を有する。この際、
紫外線照射による酸素からオゾンへの変換効率は窒素ガ
ス及びアルゴンガスの励起遷移確率より大きいことを考
慮し、前記半導体プロセスにおける自然酸化膜生成に重
大な影響を与え始める限界レベルとして酸素及び水蒸気
の混入濃度をそれぞれ１０ｐｐｍ及び１ｐｐｍ以下とす
ることが好ましい。On the other hand, when oxygen gas and water vapor are mixed in the nitrogen gas, the argon gas or the nitrogen-argon mixed gas, the oxygen gas is converted into ozone by the irradiation of ultraviolet rays. This ozone has an unfavorable effect of forming a natural oxide film on the semiconductor substrate in the presence of water vapor in the semiconductor manufacturing process. On this occasion,
Considering that the conversion efficiency of oxygen to ozone by ultraviolet irradiation is higher than the excitation transition probability of nitrogen gas and argon gas, the mixing of oxygen and water vapor as a critical level at which the formation of a natural oxide film in the semiconductor process is seriously affected. It is preferable that the concentrations are 10 ppm and 1 ppm or less, respectively.
【００１９】[0019]
【実施例】（第１実施例）以下本発明の第１実施例を図
１〜図３を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to FIGS.
【００２０】図２は第１実施例を示す平面図、図２は図
１のＡ−Ａ’線に沿った断面図である。なお、簡単のた
め、平面図において半導体基板８を省略して描いてあ
る。FIG. 2 is a plan view showing the first embodiment, and FIG. 2 is a sectional view taken along the line AA 'in FIG. For simplicity, the semiconductor substrate 8 is omitted in the plan view.
【００２１】本例では、吸着電極１はモリブデン円板
で、シリコン基板８を吸着する面上には噴射ガスの接触
を容易にする目的で複数個の細溝３を直径方向に放射状
に設ける。このモリブデン円板１に貫通孔を通って、シ
リコン基板８に電圧を印加するため、該モリブデン円板
と電気的に絶縁された接触端子４を設ける。該接触端子
４はモリブデン電極端子５とスイッチ９を介して静電吸
着電源１０に接続する。上記モリブデン円板１がシリコ
ン基板８を吸着する面は、細溝３の表面を含めた全面を
酸化アルミナを主成分とする絶縁層２で被覆する。In this example, the adsorption electrode 1 is a molybdenum disk, and a plurality of fine grooves 3 are radially provided in the diameter direction on the surface for adsorbing the silicon substrate 8 for the purpose of facilitating the contact of the injection gas. In order to apply a voltage to the silicon substrate 8 through the molybdenum disk 1 through the through hole, the contact terminal 4 electrically insulated from the molybdenum disk 1 is provided. The contact terminal 4 is connected to the electrostatic attraction power source 10 via the molybdenum electrode terminal 5 and the switch 9. On the surface of the molybdenum disk 1 that adsorbs the silicon substrate 8, the entire surface including the surface of the narrow groove 3 is covered with the insulating layer 2 containing alumina oxide as a main component.
【００２２】他方、上記モリブデン電極を囲んで円環状
のガス導入管６を吸着面より下方に、かつ吸着電極と同
心の位置に設ける。ガス導入管６の内側にガス噴出口７
を、細溝３の直径方向の延長線上であって、噴射ガスが
細溝３に沿って中心方向に最大噴出量が得られる角度に
設ける。On the other hand, an annular gas introduction pipe 6 surrounding the molybdenum electrode is provided below the adsorption surface and at a position concentric with the adsorption electrode. Inside the gas introduction pipe 6, a gas ejection port 7
Is provided on the diametrical extension line of the narrow groove 3 and at an angle such that the maximum amount of jetted gas is obtained in the central direction along the narrow groove 3.
【００２３】ガス導入管５は、好ましくは石英ガラスを
用いて製作するが、ステンレス等の金属管を用いる場合
は酸化不動態処理等の手段によって内壁面に絶縁被覆を
施す。ガス導入管６に注入するガス系の全体概念図を図
３に示す。ガスタンク１１から供給されたガスはガス流
制御部１２を経て純化装置１３において混入酸素濃度及
び水蒸気濃度をそれぞれ１０ｐｐｍ以下および１ｐｐｍ
以下に純化される。次いで、紫外線照射部１４に至り電
離ガスとなって静電吸着装置１５を内臓する半導体製造
装置へ送られる。なお、紫外線照射部１４から静電吸着
装置１５までの配管長は可能な限り短くし、電離ガスの
再結合による電荷の損失を極小にすることが望ましい。The gas introduction pipe 5 is preferably made of quartz glass, but when a metal pipe such as stainless steel is used, the inner wall surface is provided with an insulating coating by means such as oxidation passivation treatment. FIG. 3 shows an overall conceptual diagram of a gas system injected into the gas introduction pipe 6. The gas supplied from the gas tank 11 passes through the gas flow control unit 12 and has a mixed oxygen concentration of 10 ppm or less and a water vapor concentration of 1 ppm in the purifying device 13.
Purified below. Then, it reaches the ultraviolet irradiation unit 14 and becomes ionized gas, which is then sent to the semiconductor manufacturing apparatus including the electrostatic adsorption device 15. It is desirable that the pipe length from the ultraviolet irradiation unit 14 to the electrostatic adsorption device 15 be as short as possible to minimize the charge loss due to recombination of ionized gas.
【００２４】（第２実施例）以下本発明の第２実施例を
図４、図５及び図６を参照して説明する。(Second Embodiment) A second embodiment of the present invention will be described below with reference to FIGS. 4, 5 and 6.
【００２５】図４は第２実施例を示す平面図、図５及び
図６はそれぞれ図４のＡ−Ａ’線及びＢ−Ｂ’線に沿っ
た断面図である。なお、簡単のため平面図において半導
体基板８を省略して描いてある。FIG. 4 is a plan view showing the second embodiment, and FIGS. 5 and 6 are sectional views taken along the lines AA 'and BB' of FIG. 4, respectively. For simplicity, the semiconductor substrate 8 is omitted in the plan view.
【００２６】この実施例においてはモリブデン円板１の
中心部に該モリブデン円板１を貫通してガス噴射口７’
を設け、ここから噴射された電離ガスはモリブデン円板
１上に放射状に設けた細溝３に沿ってアルミナ表面２へ
導入される。また、シリコン基板８に電圧を印加するた
めの接触端子４は近傍の細溝３から離れた位置を適当に
選んで設ける。In this embodiment, the molybdenum disc 1 is penetrated through the molybdenum disc 1 through the gas injection port 7 '.
Is provided, and the ionized gas injected from here is introduced to the alumina surface 2 along the fine grooves 3 provided radially on the molybdenum disk 1. Further, the contact terminals 4 for applying a voltage to the silicon substrate 8 are provided by appropriately selecting a position apart from the neighboring narrow groove 3.
【００２７】ガス導入管６に注入するガス系は図３と共
通である。The gas system to be injected into the gas introduction pipe 6 is the same as in FIG.
【００２８】なお、各実施例を示す図１、図２、図４、
図５及び図６において、対応する箇所はそれぞれ同一の
数字で示したので再度の説明は省略する。また、細溝３
の形状、本数、電圧印加端子４の位置、個数はこれら実
施例の図示したものに限定されるものではない。なお、
各実施例は、半導体基板８の直径が静電吸着電極１のそ
れより大で使用することが多い場合及び直径の大小関係
がその反対の場合にそれぞれより適している。ただし、
この使い分けは何ら絶対的なものではない。It should be noted that FIGS. 1, 2, and 4, showing the respective embodiments,
In FIGS. 5 and 6, corresponding portions are shown by the same numerals, and thus the repetitive description will be omitted. Also, the narrow groove 3
The shape, the number, the position and the number of the voltage application terminals 4 are not limited to those shown in these embodiments. In addition,
Each embodiment is more suitable when the diameter of the semiconductor substrate 8 is larger than that of the electrostatic attraction electrode 1 and is often used, and when the size relationship of the diameters is opposite. However,
This usage is not absolute at all.
【００２９】各実施例においてそれぞれ直径８インチ及
び２インチのシリコンウエハを吸着後、スイッチ９を開
いてガス噴射後、いずれの場合も１秒以内に確実にしか
もウエハの位置を乱すことなく離脱させることが確かめ
られた。In each of the embodiments, after adsorbing silicon wafers having diameters of 8 inches and 2 inches, respectively, after opening the switch 9 and injecting gas, the wafers are reliably removed within 1 second without disturbing the position of the wafers. It was confirmed.
【００３０】[0030]
【発明の効果】本発明によれば、静電吸着装置を確実か
つ安全な吸着・離脱をならしめ、動作が迅速であり、か
つ簡単な構造によって、搬送装置類全般、印刷機械、ロ
ボット等広汎にわたっているが、本発明では特に高性能
半導体装置等の製造プロセスに適用可能な静電吸着装置
を提供することが可能となる。According to the present invention, the electrostatic attraction device can be attracted and released reliably and safely, and the operation is quick and has a simple structure. However, according to the present invention, it is possible to provide an electrostatic attraction device that can be particularly applied to a manufacturing process of a high-performance semiconductor device or the like.
【図１】 第１実施例に係る静電吸着装置の平面図であ
る。FIG. 1 is a plan view of an electrostatic attraction device according to a first embodiment.
【図２】 図１のＡ−Ａ’の断面図である。FIG. 2 is a cross-sectional view taken along the line A-A ′ in FIG.
【図３】 本発明に係る静電吸着装置に電離ガスを供給
するための系全体の概念図である。FIG. 3 is a conceptual diagram of the entire system for supplying ionized gas to the electrostatic adsorption device according to the present invention.
【図４】 第２実施例に係る静電吸着装置の平面図であ
る。FIG. 4 is a plan view of an electrostatic attraction device according to a second embodiment.
【図５】 図４のＡ−Ａ’線に沿った断面図である。5 is a cross-sectional view taken along the line A-A ′ of FIG.
【図６】 図５のＢ−Ｂ’線に沿った断面図である。6 is a cross-sectional view taken along the line B-B ′ of FIG.
１ 静電吸着電極、 ６ ガス導入管、 ８ 半導体基板、 １４ 紫外線照射部。 DESCRIPTION OF SYMBOLS 1 Electrostatic adsorption electrode, 6 Gas introduction tube, 8 Semiconductor substrate, 14 Ultraviolet irradiation part.
Claims (5)
き、前記電極と被吸着物との間に電圧を印加して静電吸
着を行う静電吸着装置において、前記電極及び被吸着物
の配設空間の雰囲気に導入されるガスに紫外線を照射す
るための照射部を具備したことを特徴をする静電吸着装
置。1. An electrostatic adsorption device for placing an object to be adsorbed on an electrode via an insulator and applying a voltage between the electrode and the object to be electrostatically adsorbed. An electrostatic adsorption device, comprising: an irradiation unit for irradiating a gas introduced into an atmosphere of an arrangement space of the object with ultraviolet rays.
成されていることを特徴とする請求項１に記載の静電吸
着装置。2. The electrostatic adsorption device according to claim 1, wherein at least the surface of the gas is formed of an insulator.
ス又は窒素ガスとアルゴンガスの混合気体のいずれかで
あることを特徴とする請求項１又は２に記載の静電吸着
装置。3. The electrostatic adsorption device according to claim 1, wherein the gas is any one of nitrogen gas, argon gas, and a mixed gas of nitrogen gas and argon gas.
水蒸気の濃度がそれぞれ１０ｐｐｍ及び１ｐｐｍ以下で
あることを特徴とする請求項１乃至３のいずれか１項に
記載の静電吸着装置。4. The electrostatic adsorption device according to claim 1, wherein the concentrations of oxygen gas and water vapor mixed in the gas are 10 ppm and 1 ppm or less, respectively.
成石英製の開口部を通して行う構造を有することを特徴
とする請求項１乃至４のいずれか１項に記載の静電吸着
装置。5. The electrostatic adsorption device according to claim 1, wherein the irradiation unit has a structure in which irradiation of ultraviolet rays is performed through an opening made of synthetic quartz.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23093991A JP3169993B2 (en) | 1991-08-19 | 1991-08-19 | Electrostatic suction device |
| EP92917995A EP0661385A1 (en) | 1991-08-19 | 1992-08-19 | Method for forming oxide film |
| PCT/JP1992/001048 WO1993004210A1 (en) | 1991-08-19 | 1992-08-19 | Method for forming oxide film |
| US08/680,519 US6146135A (en) | 1991-08-19 | 1996-07-09 | Oxide film forming method |
| US10/120,628 US6949478B2 (en) | 1991-08-19 | 2002-04-11 | Oxide film forming method |
| US11/129,710 US20050206018A1 (en) | 1991-08-19 | 2005-05-13 | Oxide film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23093991A JP3169993B2 (en) | 1991-08-19 | 1991-08-19 | Electrostatic suction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0547910A true JPH0547910A (en) | 1993-02-26 |
| JP3169993B2 JP3169993B2 (en) | 2001-05-28 |
Family
ID=16915675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23093991A Expired - Lifetime JP3169993B2 (en) | 1991-08-19 | 1991-08-19 | Electrostatic suction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3169993B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06338463A (en) * | 1993-05-28 | 1994-12-06 | Toshiba Corp | Semiconductor manufacturing device |
| EP0709877A1 (en) * | 1993-05-20 | 1996-05-01 | Hitachi, Ltd. | Plasma processing method |
| US5552955A (en) * | 1994-02-03 | 1996-09-03 | Anelva Corporation | Substrate removal method and mechanism for effecting the method |
| US5648545A (en) * | 1994-07-04 | 1997-07-15 | Basf Aktiengesellschaft | Preparation of amines from nitriles by alkylation with a nitrogen compound in the presence of a copper oxide/zirconium oxide catalyst |
| EP1148541A1 (en) * | 2000-04-19 | 2001-10-24 | Applied Materials, Inc. | Method and apparatus for conditioning an electrostatic chuck |
| WO2014042174A1 (en) * | 2012-09-12 | 2014-03-20 | 東京エレクトロン株式会社 | Detachment control method and plasma processing device |
| JP2015023264A (en) * | 2013-07-24 | 2015-02-02 | リンテック株式会社 | Transfer method and transfer device |
| CN109819570A (en) * | 2017-11-22 | 2019-05-28 | 日新离子机器株式会社 | Flat panel display manufacturing device |
| JP2020088048A (en) * | 2018-11-20 | 2020-06-04 | 東京エレクトロン株式会社 | Mounting table and static elimination method for object to be processed |
| JP2021000712A (en) * | 2019-06-24 | 2021-01-07 | 株式会社ディスコ | Holding device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6226563B2 (en) * | 2013-05-28 | 2017-11-08 | リンテック株式会社 | Electrostatic holding device and method for removing object to be held from electrostatic holding device |
-
1991
- 1991-08-19 JP JP23093991A patent/JP3169993B2/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0709877A1 (en) * | 1993-05-20 | 1996-05-01 | Hitachi, Ltd. | Plasma processing method |
| EP0709877A4 (en) * | 1993-05-20 | 1997-11-26 | Hitachi Ltd | Plasma processing method |
| JPH06338463A (en) * | 1993-05-28 | 1994-12-06 | Toshiba Corp | Semiconductor manufacturing device |
| US5552955A (en) * | 1994-02-03 | 1996-09-03 | Anelva Corporation | Substrate removal method and mechanism for effecting the method |
| US5648545A (en) * | 1994-07-04 | 1997-07-15 | Basf Aktiengesellschaft | Preparation of amines from nitriles by alkylation with a nitrogen compound in the presence of a copper oxide/zirconium oxide catalyst |
| EP1148541A1 (en) * | 2000-04-19 | 2001-10-24 | Applied Materials, Inc. | Method and apparatus for conditioning an electrostatic chuck |
| US6567257B2 (en) | 2000-04-19 | 2003-05-20 | Applied Materials, Inc. | Method and apparatus for conditioning an electrostatic chuck |
| WO2014042174A1 (en) * | 2012-09-12 | 2014-03-20 | 東京エレクトロン株式会社 | Detachment control method and plasma processing device |
| JP2015023264A (en) * | 2013-07-24 | 2015-02-02 | リンテック株式会社 | Transfer method and transfer device |
| CN109819570A (en) * | 2017-11-22 | 2019-05-28 | 日新离子机器株式会社 | Flat panel display manufacturing device |
| JP2020088048A (en) * | 2018-11-20 | 2020-06-04 | 東京エレクトロン株式会社 | Mounting table and static elimination method for object to be processed |
| JP2021000712A (en) * | 2019-06-24 | 2021-01-07 | 株式会社ディスコ | Holding device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3169993B2 (en) | 2001-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101335120B1 (en) | Apparatus for the optimization of atmospheric plasma in a plasma processing system | |
| US6344404B1 (en) | Method of separation films from bulk substrates by plasma immersion ion implantation | |
| JP2977098B2 (en) | Charged material neutralization device | |
| US8287750B2 (en) | Plasma processing method and plasma processing apparatus | |
| JPH0547910A (en) | Electrostatic attraction equipment | |
| WO1994005138A1 (en) | Appararus and method for producing gaseous ions by use of x-rays, and various apparatuses and structures using them | |
| JPH06188305A (en) | Apparatus and method for separation of body to be attracted as well as plasma processing apparatus | |
| JPH07142438A (en) | Cleaning equipment, production system and line for semiconductor | |
| WO2009036218A1 (en) | Apparatus and method for cleaning wafer edge using energetic particle beams | |
| WO2003083921A1 (en) | Method of etching | |
| JP3327492B2 (en) | Apparatus and method for removing gas phase dust from substrate surface, process apparatus and process line | |
| JP2838900B2 (en) | Method and apparatus for neutralizing charged object | |
| JPH07115085A (en) | Plasma treatment | |
| JP3323298B2 (en) | Electrostatic chuck device and plasma processing apparatus provided with the same | |
| JPH03263827A (en) | Digital etching apparatus | |
| JPH03276719A (en) | Digital etching method | |
| JPH06275546A (en) | Plasma treating device | |
| JPH0786383A (en) | Electrostatic device and method therefor | |
| JPS6124817B2 (en) | ||
| JPH06283595A (en) | Electrostatic attraction stage and its use | |
| JPS60211942A (en) | Plasma processing device | |
| JPH04282851A (en) | Electrostatic chuck and wafer processor using it | |
| JPH11150080A (en) | Manufacture of semiconductor substrate and manufacturing equipment of the semiconductor substrate | |
| JP2004063826A (en) | Method and unit for removing residual charge | |
| JP2803678B2 (en) | Contact member with charged object |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090316 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090316 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100316 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100316 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110316 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110316 Year of fee payment: 10 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120316 Year of fee payment: 11 |