JPH053439B2 - - Google Patents
Info
- Publication number
- JPH053439B2 JPH053439B2 JP61199244A JP19924486A JPH053439B2 JP H053439 B2 JPH053439 B2 JP H053439B2 JP 61199244 A JP61199244 A JP 61199244A JP 19924486 A JP19924486 A JP 19924486A JP H053439 B2 JPH053439 B2 JP H053439B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- dielectric
- epitaxial film
- mgal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 16
- 229910020068 MgAl Inorganic materials 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はペロブスカイト型構造酸化物の薄膜を
用いた薄膜デバイス用の基板に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a substrate for a thin film device using a thin film of an oxide with a perovskite structure.
（従来の技術）
PbTiO3、PbTiO3のPb及びTiの一部をそれぞ
れLa、Zrで置換したPb（Zr、Ti）O3、（Pb、La）
（Zr、Ti）O3さらにはBaTiO3、SrTiO3等のプロ
ブスカイト型結晶構造をとる酸化物誘電体材料は
コンデンサ、圧電素子、電気光学素子などの種々
の機能デバイスに応用されている。近年、デバイ
スの小型化、高集積化の要請に対応するために、
これらの材料の薄膜化の試みがなされ、焦電型赤
外線センサ、超音波センサ光スイツチなどで薄膜
を用いたデバイスが試作されている。(Prior art) PbTiO 3 , Pb(Zr, Ti)O 3 , (Pb, La) in which part of Pb and Ti in PbTiO 3 are replaced with La and Zr, respectively
Oxide dielectric materials such as (Zr, Ti)O 3 , BaTiO 3 , and SrTiO 3 having a provskite crystal structure are applied to various functional devices such as capacitors, piezoelectric elements, and electro-optical elements. In recent years, in order to respond to the demand for smaller devices and higher integration,
Attempts have been made to make these materials thinner, and devices using thin films such as pyroelectric infrared sensors, ultrasonic sensors, and optical switches have been produced.
これらの誘電体材料を用いたデバイスにおいて
最適なデバイス特性およびその再現性を確保する
ためには単結晶を用いることが必要である。多結
晶体では粒界による物理量の撹乱のため良好なデ
バイス特性を得ることが難しい。このことは薄膜
デバイスにおいても同じであり、できるだけ完全
な単結晶に近い誘電体エピタキシヤル膜が望まれ
る。また、薄膜の特性を効果的に使用するにはペ
ロブスカイト型酸化物誘電体膜の両面に電極を形
成した構造が望ましく、したがつて金属上へ誘電
体エピタキシヤル膜の形成が望ましい。 In order to ensure optimal device characteristics and their reproducibility in devices using these dielectric materials, it is necessary to use single crystals. In polycrystalline materials, it is difficult to obtain good device characteristics due to the disturbance of physical quantities due to grain boundaries. The same holds true for thin film devices, and a dielectric epitaxial film as close to a perfect single crystal as possible is desired. Further, in order to effectively utilize the characteristics of a thin film, it is desirable to have a structure in which electrodes are formed on both sides of a perovskite oxide dielectric film, and therefore it is desirable to form a dielectric epitaxial film on a metal.
ペロブスカイト型酸化物誘電体のエピタキシヤ
ル成長は基板の材料と結晶方向に大きく依存し、
金属上へのエピタキシヤル成長の例は少ない。
1985年発行のジヤパニーズ・ジヤーナル・オブ・
アプライド・フイジクス（Japanese Journal of
Applied Physics）24巻サプリメント24−２
482頁〜484頁には（001）方位に配向したPt膜上
へのPbTiO2がエピタキシヤル成長することが報
告されているが、（001）配向のPt膜を得るため
には（001）MgO単結晶基板上にPtをエピタキシ
ヤル成長させる必要がある。同様な例として、
（001）SrTiO3、（0001）α−Al2O3単結晶板上に
Pt膜をエピタキシヤル成長し、その上にPbTiO3
やPLZTをエピタキシヤル成長した報告がある。 The epitaxial growth of perovskite oxide dielectrics is highly dependent on the substrate material and crystal orientation;
There are few examples of epitaxial growth on metals.
Japanese Journal of Japanese published in 1985.
Applied Physics (Japanese Journal of
Applied Physics) Volume 24 Supplement 24-2
It is reported on pages 482 to 484 that PbTiO 2 is epitaxially grown on a Pt film oriented in the (001) direction, but in order to obtain a Pt film oriented in the (001) direction, (001) MgO It is necessary to epitaxially grow Pt on a single crystal substrate. As a similar example,
(001) SrTiO 3 , (0001) α-Al 2 O 3 on single crystal plate
A Pt film is grown epitaxially, and PbTiO 3 is deposited on top of it.
There are reports of epitaxial growth of PLZT and PLZT.
（発明が解決しようとする問題点）
しかし、MgO、SrTiO3、α−Al2O3などの酸
化物では大口径の単結晶基板を安価に製造するこ
とは極めて困難である。特にMgOは化学的安定
性に欠けており、耐酸性、耐アルカリ性がなく、
また大気中より水分、炭酸ガスなどを吸収して変
質しやすく、デバイス製造プロセスに使用するこ
とは困難である。(Problems to be Solved by the Invention) However, with oxides such as MgO, SrTiO 3 and α-Al 2 O 3 , it is extremely difficult to manufacture a large diameter single crystal substrate at low cost. In particular, MgO lacks chemical stability and has no acid or alkali resistance.
In addition, it absorbs moisture, carbon dioxide, etc. from the atmosphere and easily deteriorates, making it difficult to use in device manufacturing processes.
本発明は上述した問題を解決し、安価でデバイ
ス製造プロセス上優れた性質を有し、かつ高い機
能性を有する誘電体薄膜デバイス用基板を提供す
るものである。 The present invention solves the above-mentioned problems and provides a dielectric thin film device substrate that is inexpensive, has excellent properties in the device manufacturing process, and has high functionality.
（問題点を解決するための手段）
本発明はSi単結晶上にMgAl2O4の誘電体エピ
タキシヤル膜が形成され、該誘電体膜上にPtの
金属エピタキシヤル膜が形成され、該金属膜上に
ペロブカイト型酸化物誘電体のエピタキシヤル膜
が形成されていることを特徴とする誘電体薄膜デ
バイス用基板である。(Means for Solving the Problems) The present invention comprises forming a dielectric epitaxial film of MgAl 2 O 4 on a Si single crystal, forming a Pt metal epitaxial film on the dielectric film, and forming a Pt metal epitaxial film on the dielectric film. This is a dielectric thin film device substrate characterized in that an epitaxial film of a perovkite-type oxide dielectric is formed on the film.
（作用）
本発明においてSi単結晶上にMgAl2O4をエピ
タキシヤル成長する技術はすでに周知の技術であ
るが、MgAl2O4上にPtをエピタキシヤル成長し
た報告は従来にはなく、MgAl2O4エピタキシヤ
ル膜上に形成されるPtのエピタキシヤル膜は全
く新規に行なわれたものであり、しかも
MgAl2O4は化学的に安定が耐酸性、耐水性に優
れ、デバイス作製プロセス上有利な材料である。
MgAl2O4はスピネル構造で格子定数8.02、Ptは
面心立方構造で格子定数3.92と異種構造であるに
もかかわらず、PtがMgAl2O4上にエピタキシヤ
ル成長する原因は明らかではないが、結晶を構成
する原子あるいはイオンの配置の周期性が類似し
ていることが考えられる。(Function) Although the technique of epitaxially growing MgAl 2 O 4 on Si single crystal in the present invention is already well-known, there has been no report on epitaxially growing Pt on MgAl 2 O 4 . The Pt epitaxial film formed on the 2 O 4 epitaxial film is completely new and
MgAl 2 O 4 is chemically stable, has excellent acid resistance, and water resistance, and is an advantageous material in the device manufacturing process.
Although MgAl 2 O 4 has a spinel structure with a lattice constant of 8.02, and Pt has a face-centered cubic structure with a lattice constant of 3.92, it is not clear why Pt epitaxially grows on MgAl 2 O 4 . It is thought that the periodicity of the arrangement of atoms or ions constituting the crystals is similar.
また、単結晶基板としてSi基板を用いることに
より、良質で大口径の基板が安価に入手できるう
えに熟成したSi半導体集積回路技術を用いること
によつてより高い機能を誘電体薄膜デバイスに持
たせることができ、例えば、シリコンICと誘電
体薄膜デバイスを同一チツプ上に形成した複合デ
バイスの開発が可能となる。 In addition, by using a Si substrate as a single crystal substrate, a high-quality, large-diameter substrate can be obtained at low cost, and by using mature Si semiconductor integrated circuit technology, dielectric thin film devices can have higher functionality. For example, it becomes possible to develop a composite device in which a silicon IC and a dielectric thin film device are formed on the same chip.
（実施例） 以下実施例によつて説明する。(Example) This will be explained below using examples.
面方位が（001）のSi単結晶基板上にMgAl2O4
を気相成長法でエピタキシヤル成長し、その上に
Ptをスパツタ法で形成し、その上にPbTiO3を同
じくスパツタ法で形成した第１図は本実施の説明
図で１は（001）Si単結晶基板、２はMgAl2O4エ
ピタキシヤル膜、３はPtエピタキシヤル膜、４
はPbTiO3エピタキシヤル膜である。MgAl2O4の
気相成長は本出願人がすでに提案（特願昭57−
136051）している方法で成長した。すなわち反応
ガスとしてMgCl2、AlにHClガスを反応させて生
成したAlCl3、CO2、H2ガスを用い、キヤリアガ
スとしてN2ガスを用いた。MgAl2O4の生成反応
はMgCl2＋2AlCl3＋4CO2＋4H2→MgAl2O4＋
4CO＋8HClで表わされる。成長温度950℃で成長
し、Ｘ線回析及び電子線回析で（100）方位の
MgAl2O4がエピタキシヤル成長していることを
確認した。Ptエピタキシヤル膜は高周波マグネ
トロンスパツタリング法で作製した。Ptターゲ
ツトを用い、Arガス中で基板温度650℃で行つ
た。MgAl2O4と同様にＸ線回析と電子線回析に
よつて（001）方位に配向したエピタキシヤル膜
であることを確認した。PbTiO3エピタキシヤル
膜も高周波マグネトロンスパツタ法で作製した。
PbOを5wt％過剰に含んだPbTiO3粉末をターゲ
ツトに用い、Ar−O2混合ガス中で、基板温度500
℃で行なつた。Ｘ線回析と電子線回析によつて
（001）方位に配向したエピタキシヤル膜であるこ
とを確認した。 MgAl 2 O 4 on a Si single crystal substrate with (001) plane orientation
is epitaxially grown using the vapor phase growth method, and then
Pt was formed by sputtering method, and PbTiO 3 was formed thereon by sputtering method. Figure 1 is an explanatory diagram of this implementation. 1 is a (001) Si single crystal substrate, 2 is a MgAl 2 O 4 epitaxial film, 3 is Pt epitaxial film, 4
is a PbTiO 3 epitaxial film. The present applicant has already proposed the vapor phase growth of MgAl 2 O 4 (patent application 1983-
136051) I grew up the way I did. That is, MgCl 2 , AlCl 3 , CO 2 , and H 2 gas produced by reacting Al with HCl gas were used as the reaction gases, and N 2 gas was used as the carrier gas. The production reaction of MgAl 2 O 4 is MgCl 2 +2AlCl 3 +4CO 2 +4H 2 →MgAl 2 O 4 +
It is expressed as 4CO+8HCl. It was grown at a growth temperature of 950℃, and the (100) orientation was determined by X-ray and electron diffraction.
It was confirmed that MgAl 2 O 4 was grown epitaxially. The Pt epitaxial film was fabricated by high frequency magnetron sputtering method. The experiment was carried out using a Pt target in Ar gas at a substrate temperature of 650°C. Similar to MgAl 2 O 4 , it was confirmed by X-ray diffraction and electron beam diffraction that it was an epitaxial film oriented in the (001) direction. A PbTiO 3 epitaxial film was also fabricated using the high-frequency magnetron sputtering method.
PbTiO 3 powder containing 5 wt% excess of PbO was used as a target, and the substrate temperature was 500 m in Ar-O 2 mixed gas.
It was carried out at ℃. It was confirmed by X-ray diffraction and electron diffraction that it was an epitaxial film oriented in the (001) direction.
次に、実施例１において、PbTiO3の代りに
（Pb1-xLax）（ZryTiz）O3のいわゆるPCZT膜を
エピタキシヤル成長した。ターゲツトは（ｘ／
ｙ／ｚ）が（９／65／35）の組成に5wt％過剰の
PbOを加えた粉末を用い、実施例１と同様にスパ
ツタ法により行つた。PLZTもPbTiO3と同様に、
（001）方位にエピタキシヤル成長した膜であるこ
とを、Ｘ線回析、電子線回析によつて確認した。 Next, in Example 1, a so-called PCZT film of (Pb 1- xLax)(ZryTiz)O 3 was epitaxially grown instead of PbTiO 3 . The target is (x/
y/z) is 5wt% excess to the composition of (9/65/35).
The sputtering method was carried out in the same manner as in Example 1 using powder to which PbO was added. PLZT, like PbTiO3 ,
It was confirmed by X-ray diffraction and electron beam diffraction that the film was epitaxially grown in the (001) direction.
（発明の効果）
以上述べたように本発明は、Si単結晶基板上に
Ptエピタキシヤル膜を形成し、その上にペロブ
スカイト型酸化物誘電体エピタキシヤル膜を形成
したものである。Si単結晶基板を用いることによ
り、大口径で良質の基板を低価格に入手できるこ
と、及び誘電体薄膜デバイスとSiICTCとを一体
化できる利点を考えれば本発明の工業的価値は大
きい。(Effects of the Invention) As described above, the present invention provides a
A Pt epitaxial film is formed, and a perovskite-type oxide dielectric epitaxial film is formed on top of the Pt epitaxial film. The industrial value of the present invention is great considering that by using a Si single crystal substrate, a large-diameter, high-quality substrate can be obtained at a low cost, and that a dielectric thin film device and a SiICTC can be integrated.
第１図は本発明による基板の製造プロセスを示
す図。
１……Si単結晶基板、２……MgAl2O4エピタ
キシヤル膜、３……Ptエピタキシヤル膜、４…
…PbTiO3エピタキシヤル膜。
FIG. 1 is a diagram showing a manufacturing process of a substrate according to the present invention. 1...Si single crystal substrate, 2... MgAl2O4 epitaxial film, 3...Pt epitaxial film, 4...
...PbTiO 3 epitaxial film.
Claims (1)
タキシヤル膜が形成され、該誘電体膜上にPtの
エピタキシヤル膜が形成され、該金属膜上にペロ
ブスカイト型構造酸化物の誘電体膜が形成されて
いることを特徴とする誘電体薄膜デバイス用基
板。1. A dielectric epitaxial film of MgAl 2 O 4 is formed on a silicon single crystal, a Pt epitaxial film is formed on the dielectric film, and a dielectric film of a perovskite structure oxide is formed on the metal film. A substrate for a dielectric thin film device, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199244A JPS6355198A (en) | 1986-08-25 | 1986-08-25 | Substrate for dielectric thin film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199244A JPS6355198A (en) | 1986-08-25 | 1986-08-25 | Substrate for dielectric thin film device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6355198A JPS6355198A (en) | 1988-03-09 |
| JPH053439B2 true JPH053439B2 (en) | 1993-01-14 |
Family
ID=16404564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61199244A Granted JPS6355198A (en) | 1986-08-25 | 1986-08-25 | Substrate for dielectric thin film device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355198A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2712780B2 (en) * | 1990-07-19 | 1998-02-16 | 松下電器産業株式会社 | High frequency heating equipment |
| JPH06196648A (en) * | 1992-12-25 | 1994-07-15 | Fuji Xerox Co Ltd | Oriented ferroelectric thin film device |
| JP2004158717A (en) * | 2002-11-07 | 2004-06-03 | Fujitsu Ltd | Thin-film laminated body, electronic device and actuator using the same, and method for manufacturing the actuator |
| CN1688926A (en) * | 2003-01-27 | 2005-10-26 | 富士通株式会社 | Optical deflection device, and manufacturing method thereof |
| JP2008252071A (en) * | 2007-03-06 | 2008-10-16 | Fujifilm Corp | Piezoelectric device, method for manufacturing the same, and liquid discharge device |
-
1986
- 1986-08-25 JP JP61199244A patent/JPS6355198A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6355198A (en) | 1988-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |