JPH0533525U - Single-wafer CVD equipment - Google Patents
Single-wafer CVD equipmentInfo
- Publication number
- JPH0533525U JPH0533525U JP8955491U JP8955491U JPH0533525U JP H0533525 U JPH0533525 U JP H0533525U JP 8955491 U JP8955491 U JP 8955491U JP 8955491 U JP8955491 U JP 8955491U JP H0533525 U JPH0533525 U JP H0533525U
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- JP
- Japan
- Prior art keywords
- wafer
- susceptor
- pin
- chamber
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】
【目的】 ウェーハ表面の膜厚分布を均一にし、かつ不
純物濃度を均一にする。
【構成】 サセプタ３上にピン３Ａを立設し、このピン
３Ａにウェーハ４を支持してなる。
(57) [Summary] [Purpose] To make the film thickness distribution on the wafer surface uniform and to make the impurity concentration uniform. [Structure] A pin 3A is erected on a susceptor 3, and a wafer 4 is supported by the pin 3A.
Description
【０００１】[0001]
本考案は半導体製造に使用する枚葉式ＣＶＤ装置に関する。 The present invention relates to a single-wafer CVD apparatus used for semiconductor manufacturing.
【０００２】[0002]
従来の枚葉式ＣＶＤ装置の構成を図１を参照して説明すると、１は水冷式チャ ンバ、６はこのチャンバ１内に設けられた石英ヒータカバー、３はこのカバー６ 上に載置されヒータ２により加熱されるサセプタ、４はこのサセプタ３により加 熱されるウェーハ、５はこれに対向して設けられ反応ガスを噴射する水冷式ガス ノズル、７はチャンバ１内を排気するための排気口、８はヒータカバー２内を排 気するための排気口である。 The structure of a conventional single-wafer CVD apparatus will be described with reference to FIG. 1. Reference numeral 1 is a water-cooled chamber, 6 is a quartz heater cover provided in the chamber 1, and 3 is placed on the cover 6. A susceptor heated by the heater 2, 4 is a wafer heated by the susceptor 3, 5 is a water-cooled gas nozzle provided facing the wafer to inject reaction gas, and 7 is an exhaust port for exhausting the inside of the chamber 1. Denoted at 8 are exhaust ports for exhausting the inside of the heater cover 2.
【０００３】 上記構成の枚葉式ＣＶＤ装置において排気口７，８に連結された排気装置によ りチャンバ１内及びヒータカバー６内を排気する。この排気により減圧されたチ ャンバ１内にガスノズル５より反応ガスを導入しつつヒータ２によりサセプタ３ を加熱し、ウェーハ４を加熱することによりウェーハ４の表面にＣＶＤ膜を生成 することができる。In the single-wafer CVD apparatus having the above-described structure, the inside of the chamber 1 and the inside of the heater cover 6 are exhausted by the exhaust apparatus connected to the exhaust ports 7 and 8. A CVD film can be formed on the surface of the wafer 4 by heating the susceptor 3 with the heater 2 while introducing the reaction gas from the gas nozzle 5 into the chamber 1 whose pressure has been reduced by the exhaust, and heating the wafer 4.
【０００４】[0004]
上記従来例にあっては、上面が平坦な円板状のサセプタ３をヒータカバー６上 に載せ、このサセプタ３の中心部上にウェーハ４を載置してウェーハ４を加熱す る場合、ウェーハ裏面とウェーハ表面との温度差によりウェーハ４は上方へ反り 返るため、ウェーハ４とサセプタ３の接触部分は中心部のみとなり、ウェーハ中 心部の温度が周辺部の温度より上昇し、この状態でＣＶＤ膜を生成すると、温度 差により膜厚が均一にならないばかりでなく、不純物をドープした場合の不純物 濃度も均一にならないという課題がある。 In the above conventional example, when the disk-shaped susceptor 3 having a flat upper surface is placed on the heater cover 6 and the wafer 4 is placed on the central portion of the susceptor 3 to heat the wafer 4, Since the wafer 4 warps upward due to the temperature difference between the back surface and the front surface of the wafer, the contact portion between the wafer 4 and the susceptor 3 is only the central portion, and the temperature at the central portion of the wafer rises above the temperature at the peripheral portion. When the CVD film is formed, there is a problem that not only the film thickness is not uniform due to the temperature difference, but also the impurity concentration when the impurity is doped is not uniform.
【０００５】[0005]
【課題を解決するための手段】 本考案装置は上記の課題を解決するため、図１に示すようにチャンバ１内にヒ ータ２により加熱されるサセプタ３を設け、このサセプタ３によりウェーハ４を 加熱し、反応ガスを噴射するガスノズル５を設置してなる枚葉式ＣＶＤ装置にお いて、サセプタ３上にピン３Ａを立設し、このピン３Ａにウェーハ４を支持して なる。In order to solve the above problems, the device of the present invention is provided with a susceptor 3 heated by a heater 2 in a chamber 1 as shown in FIG. In a single-wafer CVD apparatus in which a gas nozzle 5 for heating and for injecting a reaction gas is installed, a pin 3A is erected on the susceptor 3 and a wafer 4 is supported on the pin 3A.
【０００６】[0006]
このような構成とすることによりウェーハ４はサセプタ３に直接接触していな いので、ウェーハ４の裏面が受ける熱は真空中においてサセプタ３の上面からの 輻射熱だけとなり、サセプタ上面の温度，熱放射率がどの点でも等しく、ウェー ハ表面の温度分布を、ウェーハをサセプタに直接載置する従来の場合よりも均一 になり、ウェーハ表面の膜厚分布を均一にでき、又不純物をドープした場合の不 純物濃度を均一にできることになる。 With such a configuration, the wafer 4 is not in direct contact with the susceptor 3, so that the heat received by the back surface of the wafer 4 is only the radiant heat from the upper surface of the susceptor 3 in vacuum, and the temperature of the upper surface of the susceptor and the heat radiation The rate is the same at all points, the temperature distribution on the wafer surface is more uniform than in the conventional case where the wafer is placed directly on the susceptor, and the film thickness distribution on the wafer surface can be made uniform. The impurity concentration can be made uniform.
【０００７】[0007]
図１は本考案装置の１実施例の構成を示す簡略断面図である。図１において、 １は水冷式チャンバ、６はこのチャンバ１内に設けられた石英ヒータカバー、３ はこのカバー６上に載置されヒータ２により加熱されるサセプタ、４はこのサセ プタ３により加熱されるウェーハ、５はこれに対向して設けられ反応ガスを噴射 する水冷式ガスノズル、７はチャンバ１内を排気するための排気口、８はヒータ カバー２内を排気するための排気口である。 FIG. 1 is a simplified sectional view showing the construction of one embodiment of the device of the present invention. In FIG. 1, 1 is a water-cooled chamber, 6 is a quartz heater cover provided in the chamber 1, 3 is a susceptor placed on the cover 6 and heated by a heater 2, 4 is heated by the susceptor 3. Wafers to be formed, 5 are water-cooled gas nozzles provided opposite to the nozzles for injecting a reaction gas, 7 is an exhaust port for exhausting the inside of the chamber 1, and 8 is an exhaust port for exhausting the inside of the heater cover 2. ..
【０００８】 本実施例においては、ウェーハ４の直径よりも充分に大きい直径のサセプタ３ 上に穴３Ｂを設け、この穴３Ｂにピン３Ａを立てて固定し、このピン３Ａにウェ ーハ４を支持せしめる。穴３Ｂとピン３Ａの位置をウェーハ４の周囲５mm以内と しており、かつピン３Ａの高さ（サセプタ３の表面からウェーハ４の裏面までの 距離）Ｈを０．３mm〜５mmの範囲に設定してある。In this embodiment, a hole 3B is provided on the susceptor 3 having a diameter sufficiently larger than the diameter of the wafer 4, and a pin 3A is set upright in the hole 3B and fixed, and the wafer 4 is attached to the pin 3A. Support me. The positions of the holes 3B and the pins 3A are set within 5 mm around the wafer 4, and the height of the pins 3A (distance from the front surface of the susceptor 3 to the back surface of the wafer 4) H is set in the range of 0.3 mm to 5 mm. I am doing it.
【０００９】 上記構成の枚葉式ＣＶＤ装置において排気口７，８に連結された排気装置によ りチャンバ１内及びヒータカバー６内を排気する。この排気により減圧されたチ ャンバ１内にガスノズル５より反応ガスを導入しつつヒータ２によりサセプタ３ を加熱し、ウェーハ４を加熱することによりウェーハ４の表面にＣＶＤ膜を生成 することができる。In the single-wafer CVD apparatus having the above-described structure, the inside of the chamber 1 and the inside of the heater cover 6 are exhausted by the exhaust apparatus connected to the exhaust ports 7 and 8. A CVD film can be formed on the surface of the wafer 4 by heating the susceptor 3 with the heater 2 while introducing the reaction gas from the gas nozzle 5 into the chamber 1 whose pressure has been reduced by the exhaust, and heating the wafer 4.
【００１０】 この場合、ウェーハ４はサセプタ３に直接接触していないので、ウェーハ４の 裏面が受ける熱は真空中においてサセプタ３の上面からの輻射熱だけとなり、サ セプタ上面の温度，熱放射率がどの点でも等しく、ウェーハ４の直径よりもサセ プタ３の直径が充分に大きい場合、ウェーハ表面の温度分布を、ウェーハをサセ プタに直接載置する従来の場合よりも均一になり、ウェーハ表面の膜厚分布を均 一にでき、又不純物をドープした場合の不純物濃度を均一にできることになる。In this case, since the wafer 4 is not in direct contact with the susceptor 3, the heat received by the back surface of the wafer 4 is only the radiant heat from the upper surface of the susceptor 3 in vacuum, and the temperature and thermal emissivity of the upper surface of the susceptor are When the diameter of the susceptor 3 is sufficiently larger than the diameter of the wafer 4 at all points, the temperature distribution on the wafer surface becomes more uniform than in the conventional case where the wafer is directly mounted on the susceptor, and The film thickness distribution can be made uniform, and the impurity concentration when doping impurities can be made uniform.
【００１１】 又、穴３Ｂとピン３Ａの位置及びピン３Ａの高さＨについては種々変更して実 験した結果、穴３Ｂとピン３Ａの位置はウェーハ４の周囲５mm以内とし、ピン３ Ａの高さＨは０．３mm〜５mmの範囲に設定したとき、満足する結果が得られた。Further, as a result of various experiments for changing the positions of the holes 3B and the pins 3A and the height H of the pins 3A, the positions of the holes 3B and the pins 3A were within 5 mm around the wafer 4, Satisfactory results were obtained when the height H was set in the range of 0.3 mm to 5 mm.
【００１２】[0012]
上述のように本考案によれば、ウェーハ４はサセプタ３に直接接触していない ので、ウェーハ４の裏面が受ける熱は真空中においてサセプタ３の上面からの輻 射熱だけとなり、サセプタ上面の温度，熱放射率がどの点でも等しく、ウェーハ 表面の温度分布を、ウェーハをサセプタに直接載置する従来の場合よりも均一に なり、ウェーハ表面の膜厚分布を均一にでき、又不純物をドープした場合の不純 物濃度を均一にできる。 As described above, according to the present invention, since the wafer 4 is not in direct contact with the susceptor 3, the heat received by the back surface of the wafer 4 is only the radiant heat from the upper surface of the susceptor 3 in vacuum, and the temperature of the upper surface of the susceptor 3 ， Thermal emissivity is the same at all points, the temperature distribution on the wafer surface is more uniform than in the conventional case where the wafer is placed directly on the susceptor, the film thickness distribution on the wafer surface can be made uniform, and impurities are doped. In this case, the impurity concentration can be made uniform.
【図１】本考案装置の１実施例の構成を示す簡略断面図
である。FIG. 1 is a simplified cross-sectional view showing the configuration of an embodiment of the device of the present invention.
１ （水冷式）チャンバ ２ ヒータ ３ サセプタ ３Ａ ピン ３Ｂ 穴 ４ ウェーハ ５ ガスノズル 1 (water cooling type) chamber 2 heater 3 susceptor 3A pin 3B hole 4 wafer 5 gas nozzle
───────────────────────────────────────────────────── フロントページの続き (72)考案者 三津山 行雄 愛媛県伊予郡松前町大字北黒田831−１ ベルメゾン松前305号 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yukio Mitsuyama 831-1 Kitakuroda, Matsumae-cho, Iyo-gun, Ehime Prefecture Bellmaison Matsumae 305
Claims (4)
加熱されるサセプタ（３）を設け、このサセプタ（３）
によりウェーハ（４）を加熱し、反応ガスを噴射するガ
スノズル（５）を設置してなる枚葉式ＣＶＤ装置におい
て、サセプタ（３）上にピン（３Ａ）を立設し、このピ
ン（３Ａ）にウェーハ（４）を支持してなる枚葉式ＣＶ
Ｄ装置。1. A susceptor (3) heated by a heater (2) is provided in a chamber (1), and the susceptor (3) is provided.
In a single-wafer CVD apparatus in which a wafer (4) is heated by means of a gas nozzle (5) for injecting a reaction gas, a pin (3A) is erected on the susceptor (3), and this pin (3A) Single wafer type CV that supports wafer (4) on
D device.
の直径よりも充分に大きくすることを特徴とする請求項
１の枚葉式ＣＶＤ装置。2. The diameter of the susceptor (3) is set to the wafer (4).
2. The single-wafer CVD apparatus according to claim 1, wherein the single-wafer CVD apparatus has a diameter sufficiently larger than the diameter.
mm以内でウェーハ（４）を支持する請求項１の枚葉式Ｃ
ＶＤ装置。3. The pin (3A) is located around the wafer (4) 5
Single wafer type C according to claim 1, which supports the wafer (4) within mm.
VD device.
の範囲である請求項１の枚葉式ＣＶＤ装置。4. The height H of the pin (3A) is 0.3 mm to 5 mm.
The single-wafer CVD apparatus according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8955491U JPH0533525U (en) | 1991-10-04 | 1991-10-04 | Single-wafer CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8955491U JPH0533525U (en) | 1991-10-04 | 1991-10-04 | Single-wafer CVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0533525U true JPH0533525U (en) | 1993-04-30 |
Family
ID=13974045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8955491U Pending JPH0533525U (en) | 1991-10-04 | 1991-10-04 | Single-wafer CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0533525U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855898A (en) * | 1994-02-25 | 1996-02-27 | Applied Materials Inc | Suscepter for accumulation device |
| JP2003515949A (en) * | 1999-11-30 | 2003-05-07 | ウエファーマスターズ， インコーポレイテッド | Single wafer annealing oven |
-
1991
- 1991-10-04 JP JP8955491U patent/JPH0533525U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855898A (en) * | 1994-02-25 | 1996-02-27 | Applied Materials Inc | Suscepter for accumulation device |
| JP2003515949A (en) * | 1999-11-30 | 2003-05-07 | ウエファーマスターズ， インコーポレイテッド | Single wafer annealing oven |
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