JPH08236459A - Cvd device - Google Patents
Cvd deviceInfo
- Publication number
- JPH08236459A JPH08236459A JP6332495A JP6332495A JPH08236459A JP H08236459 A JPH08236459 A JP H08236459A JP 6332495 A JP6332495 A JP 6332495A JP 6332495 A JP6332495 A JP 6332495A JP H08236459 A JPH08236459 A JP H08236459A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- reaction
- preheating
- filter
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板上に薄膜を
形成するためのＣＶＤ装置に関する。詳しくは、反応ガ
ス配管上にフィルターを設けることによって、不純物を
除去しようとしたＣＶＤ装置に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD apparatus for forming a thin film on a semiconductor substrate. More specifically, the present invention relates to a CVD apparatus that attempts to remove impurities by providing a filter on the reaction gas pipe.
【０００２】[0002]
【従来の技術】半導体装置の製造工程における薄膜形成
のために、減圧ＣＶＤ装置が用いられている。この減圧
ＣＶＤ装置は、減圧した反応室内に成膜すべき半導体ウ
ェハをセットし、反応室を加熱した状態で反応ガスを導
入してウェハ上に薄膜を化学的に気相成長させるもので
ある。従来の減圧ＣＶＤ装置においては、反応ガスを常
温のまま反応室内に導入していたため、特に反応ガスの
上流域において反応ガスの昇温および活性化が充分でな
く、反応室内での分解、成膜プロセスにおける活性化エ
ネルギーの不足による膜質の劣化等の問題を生じてい
た。2. Description of the Related Art A low pressure CVD apparatus is used for forming a thin film in a semiconductor device manufacturing process. This depressurization CVD apparatus sets a semiconductor wafer to be formed into a film in a depressurized reaction chamber, and introduces a reaction gas while the reaction chamber is heated to chemically vapor-deposit a thin film on the wafer. In the conventional low pressure CVD apparatus, since the reaction gas is introduced into the reaction chamber at room temperature, the temperature rise and activation of the reaction gas are not sufficient especially in the upstream region of the reaction gas, and the decomposition and film formation in the reaction chamber occur. There was a problem such as deterioration of film quality due to lack of activation energy in the process.
【０００３】このような問題に対処するため、反応室内
に反応ガスを導入する前にこの反応ガスを予め加熱し、
加熱された反応ガスを反応室内に導入することによって
膜質の均一化を図ったＣＶＤ装置が提案されている（特
開平５−３３５２５０号公報、特開平５−２３４９０３
号公報）。In order to deal with such a problem, the reaction gas is preheated before it is introduced into the reaction chamber,
A CVD apparatus has been proposed in which a heated reaction gas is introduced into the reaction chamber to homogenize the film quality (JP-A-5-335250 and JP-A-5-234903).
Issue).
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、前記公
報記載のＣＶＤ装置においては、反応ガスを反応室内に
導入する前の予熱工程において、反応ガスの重合生成物
等の中間体が生成され、これが反応室内に流入して不純
物となってウェハ上に付着したり、あるいはウェハ上で
の気相成長の化学反応に影響して半導体特性や膜質を不
安定にし品質の低下を来すおそれがあった。However, in the CVD apparatus described in the above publication, in the preheating step before introducing the reaction gas into the reaction chamber, an intermediate such as a polymerization product of the reaction gas is generated, and this is a reaction product. There is a possibility that it may flow into the chamber and become impurities and adhere to the wafer, or it may affect the chemical reaction of vapor phase growth on the wafer to make the semiconductor characteristics and film quality unstable and deteriorate the quality.
【０００５】本発明は、上記従来技術の問題点に鑑みな
されたものであって、反応ガスの予熱手段を備えたＣＶ
Ｄ装置において、反応ガスの中間生成体からなる不純物
を除去し膜質の向上を図ったＣＶＤ装置の提供を目的と
する。The present invention has been made in view of the above problems of the prior art, and is a CV equipped with a preheating means for the reaction gas.
It is an object of the present invention to provide a CVD apparatus in which the quality of the film is improved by removing impurities which are intermediate products of the reaction gas in the apparatus D.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するた
め、本発明では、反応室内に複数枚のウェハを収容し、
この反応室に連結された反応ガス配管上に反応ガスを予
熱するための予熱ヒータ等の予熱手段を設けたＣＶＤ装
置において、上記予熱手段と反応室の間の反応ガス配管
上にフィルターを設けたことを特徴とするＣＶＤ装置を
提供する。To achieve the above object, in the present invention, a plurality of wafers are accommodated in a reaction chamber,
In a CVD apparatus provided with preheating means such as a preheating heater for preheating a reaction gas on a reaction gas pipe connected to this reaction chamber, a filter is provided on the reaction gas pipe between the preheating means and the reaction chamber. A CVD apparatus characterized by the above.
【０００７】好ましい実施例においては、前記フィルタ
ーは、予熱による反応ガスの中間生成物を除去するため
のセラミックス系フィルターまたはメタルフィルターか
らなることを特徴としている。In a preferred embodiment, the filter is a ceramic type filter or a metal filter for removing an intermediate product of a reaction gas by preheating.
【０００８】[0008]
【作用】反応ガスが予熱手段を通過する間に生成された
反応ガスの中間体は、反応室の前に設けられたフィルタ
ーにより除去される。The intermediate of the reaction gas produced during the passage of the reaction gas through the preheating means is removed by the filter provided in front of the reaction chamber.
【０００９】[0009]
【実施例】図１は、本発明の実施例に係る減圧ＣＶＤ装
置の要部構成図である。石英管からなるインナーチュー
ブ１の外周を覆って同じく石英からなるアウターチュー
ブ２が設けられる。インナーチューブ１内に、例えば４
本の支柱形状の石英ボートが設けられ、各支柱に形成さ
れた溝にウェハ４を装着して複数枚の水平なウェハ４を
縦方向に所定間隔で重ねて支持する。このように内部に
ウェハ搭載用石英ボート３を備えたアウターチューブ２
の内部が反応室１０を構成する。アウターチューブ２の
下部には真空ポンプ１１が排気管１４を介して接続され
る。アウターチューブ２の外周には電気抵抗体からなる
ヒータ５が設けられ成膜プロセス時にウェハ４を加熱す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of the essential parts of a low pressure CVD apparatus according to an embodiment of the present invention. An outer tube 2 also made of quartz is provided to cover the outer circumference of the inner tube 1 made of a quartz tube. In the inner tube 1, for example, 4
A column-shaped quartz boat is provided, and the wafers 4 are mounted in the grooves formed in each of the columns to support a plurality of horizontal wafers 4 in a vertical direction at predetermined intervals. In this way, the outer tube 2 having the wafer mounting quartz boat 3 inside
The inside of the chamber constitutes the reaction chamber 10. A vacuum pump 11 is connected to the lower portion of the outer tube 2 via an exhaust pipe 14. A heater 5 made of an electric resistor is provided on the outer circumference of the outer tube 2 to heat the wafer 4 during the film forming process.
【００１０】石英ボート３の下側には石英からなる保温
筒６が設けられる。この保温筒６は、成膜プロセス時に
反応室下部からウェハが冷却されないように保温するた
めのものである。石英ボート３および保温筒６は昇降動
作可能なステージ１３上に支持され、ウェハの出し入れ
時に石英ボート３にセットしたウェハ４とともにインナ
ーチューブ１内を上下動作する。A heat insulating cylinder 6 made of quartz is provided below the quartz boat 3. The heat-retaining cylinder 6 is for retaining heat so that the wafer is not cooled from the lower portion of the reaction chamber during the film forming process. The quartz boat 3 and the heat retaining tube 6 are supported on a stage 13 which can be moved up and down, and vertically move in the inner tube 1 together with the wafer 4 set in the quartz boat 3 when the wafer is taken in and out.
【００１１】インナーチューブ１の下部に反応ガス配管
１２が接続される。この反応ガス配管１２上に予熱ヒー
タ８を周囲に有する予熱室７が設けられる。この予熱室
７とインナーチューブ１との間の反応ガス配管１２上に
フィルター９が設けられる。このフィルター９として
は、ポーラス状のセラミックス系フィルターやメタルフ
ィルターあるいはガラスフィルターを用いることができ
るが、高温に対処するためにセラミックス系フィルター
あるいはメタルフィルターが望ましい。なお、予熱室７
は熱交換器形状やコイル形状等であってもよいが、単に
反応ガス配管１２上に予熱ヒータ８を装着した構成であ
ってもよい。A reaction gas pipe 12 is connected to the lower portion of the inner tube 1. A preheating chamber 7 having a preheating heater 8 around it is provided on the reaction gas pipe 12. A filter 9 is provided on the reaction gas pipe 12 between the preheating chamber 7 and the inner tube 1. As the filter 9, a porous ceramic filter, a metal filter, or a glass filter can be used, but a ceramic filter or a metal filter is preferable in order to cope with high temperatures. The preheating room 7
May have a heat exchanger shape, a coil shape, or the like, but may have a configuration in which the preheating heater 8 is simply mounted on the reaction gas pipe 12.
【００１２】上記構成の減圧ＣＶＤ装置において、成膜
時にウェハ上に例えばポリシリコンやアモルファスシリ
コンあるいはナイトライド等を減圧ＣＶＤプロセスによ
り形成する場合、反応ガスとしてシランガスが、矢印Ａ
のように反応ガス配管１２を通してインナーチューブ１
の内側下部より反応室１０内に供給される。反応条件
は、例えば温度６１０℃、圧力２５Ｐａ、シランガス流
量１４０ｓｃｃｍである。このシランガスは反応室に導
入される前に予熱室７で約３００℃程度まで加熱され
る。なお、この予熱温度は成膜の種類や成膜条件および
ガスの種類等に応じて適当な任意の温度に設定すること
ができる。このようにシランガスを予熱することによ
り、シランの重合生成物等の中間体が形成される。この
ような反応ガスの予熱により生じた中間体は、他の不純
物とともに反応室直前に設けたフィルター９により除去
される。このようにして不純成分が除去された反応ガス
は、インナーチューブ１の下部より反応室１０内に流入
し、石英ボートにセットされたウェハに接しながら上昇
し各ウェハ４上に所定の成膜条件の薄膜を形成する。こ
のとき、ヒータ５により、石英ボート３上のウェハ４
は、反応室１０の中央部で約６１０℃、上部で約６１５
℃、下部で約６０５℃程度に加熱される。In the low pressure CVD apparatus having the above structure, when, for example, polysilicon, amorphous silicon, nitride or the like is formed on a wafer by a low pressure CVD process during film formation, silane gas is used as a reaction gas and arrow A
Inner tube 1 through reaction gas pipe 12 like
It is supplied into the reaction chamber 10 from the lower part inside. The reaction conditions are, for example, a temperature of 610 ° C., a pressure of 25 Pa, and a silane gas flow rate of 140 sccm. This silane gas is heated to about 300 ° C. in the preheating chamber 7 before being introduced into the reaction chamber. The preheating temperature can be set to an appropriate temperature depending on the type of film formation, the film forming conditions, the type of gas, and the like. By preheating the silane gas in this way, an intermediate such as a polymerization product of silane is formed. The intermediate produced by such preheating of the reaction gas is removed together with other impurities by the filter 9 provided immediately before the reaction chamber. The reaction gas from which the impure components have been removed in this way flows into the reaction chamber 10 from the lower part of the inner tube 1 and rises while coming into contact with the wafer set in the quartz boat, and a predetermined film forming condition on each wafer 4. To form a thin film. At this time, the wafer 5 on the quartz boat 3 is moved by the heater 5.
Is about 610 ° C. at the center of the reaction chamber 10 and about 615 at the top.
C. and the lower part is heated to about 605.degree.
【００１３】反応ガスは、インナーチューブ１内を上昇
してその上部からアウターチューブ２とインナーチュー
ブ１との間の隙間を通して下方に流れ、アウターチュー
ブ２に接続された排気管１４を通して反応室の外部に排
出される。The reaction gas ascends in the inner tube 1 and flows downward from the upper part thereof through the gap between the outer tube 2 and the inner tube 1, and passes through the exhaust pipe 14 connected to the outer tube 2 to the outside of the reaction chamber. Is discharged to.
【００１４】なお、上記実施例はホットウォール型減圧
ＣＶＤ装置について説明したが、本発明はコールドウォ
ール型減圧ＣＶＤ装置やプラズマＣＶＤ装置および常圧
ＣＶＤ装置に対しても適用可能である。Although the above embodiment has been described with respect to the hot wall type low pressure CVD apparatus, the present invention can be applied to the cold wall type low pressure CVD apparatus, the plasma CVD apparatus and the atmospheric pressure CVD apparatus.
【００１５】また、反応ガス系統が複数ある場合、ある
いは複数種類のガスを別々に反応室内に導入する場合に
は、反応室に接続される各々のガス配管上にフィルター
を設けることが望ましい。Further, when there are a plurality of reaction gas systems or when a plurality of kinds of gases are separately introduced into the reaction chamber, it is desirable to provide a filter on each gas pipe connected to the reaction chamber.
【００１６】また、ガス配管上のフィルターの位置は、
上記実施例の図では反応室の外側に設けているが反応室
（インナーチューブ）の内側であってもよい。The position of the filter on the gas pipe is
Although it is provided outside the reaction chamber in the drawings of the above-mentioned embodiments, it may be provided inside the reaction chamber (inner tube).
【００１７】[0017]
【発明の効果】以上説明したように、本発明において
は、反応ガスを予熱した後、フィルターを通して反応室
内に導入しているため、予熱により生じた反応ガスの中
間体が、反応ガス中に混入している他の不純物とともに
反応室の直前で除去される。これにより、予備加熱によ
り反応ガスを充分活性化して反応時の分解から成膜に至
るプロセスを良好な状態で行うことができるとともに、
予備加熱により生じた中間体等の不純物成分を除去して
品質の高い薄膜形成が可能になり、半導体装置の特性の
向上や安定化に寄与しまた歩留りの向上が図られる。As described above, in the present invention, since the reaction gas is preheated and then introduced into the reaction chamber through the filter, an intermediate of the reaction gas generated by the preheating is mixed into the reaction gas. It is removed just before the reaction chamber along with other impurities. This makes it possible to sufficiently activate the reaction gas by preheating and perform the process from decomposition during the reaction to film formation in a good state,
Impurity components such as intermediates generated by preheating can be removed to form a high quality thin film, which contributes to the improvement and stabilization of the characteristics of the semiconductor device and the yield.
【図１】 本発明の実施例に係る減圧ＣＶＤ装置の構成
図である。FIG. 1 is a configuration diagram of a low pressure CVD apparatus according to an embodiment of the present invention.
１：インナーチューブ、２：アウターチューブ、３：石
英ボート、４：ウェハ、５：ヒータ、６：保温筒、７：
予熱室、８：予熱ヒータ、９：フィルター、１０：反応
室、１１：真空ポンプ、１２：反応ガス配管、１３：ス
テージ、１４：排気管。1: inner tube, 2: outer tube, 3: quartz boat, 4: wafer, 5: heater, 6: heat insulating tube, 7:
Preheating chamber, 8: preheating heater, 9: filter, 10: reaction chamber, 11: vacuum pump, 12: reaction gas pipe, 13: stage, 14: exhaust pipe.
Claims (2)
熱するための予熱手段を設けたＣＶＤ装置において、 上記予熱手段と反応室の間の反応ガス配管上にフィルタ
ーを設けたことを特徴とするＣＶＤ装置。1. A CVD apparatus in which a plurality of wafers are accommodated in a reaction chamber, and a preheating means for preheating the reaction gas is provided on a reaction gas pipe connected to the reaction chamber, wherein the preheating means and the reaction chamber. A CVD apparatus characterized in that a filter is provided on the reaction gas pipe between the two.
の中間生成物を除去するためのセラミックス系フィルタ
ーまたはメタルフィルターからなることを特徴とする請
求項１に記載のＣＶＤ装置。2. The CVD apparatus according to claim 1, wherein the filter comprises a ceramic filter or a metal filter for removing an intermediate product of a reaction gas by preheating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6332495A JPH08236459A (en) | 1995-02-27 | 1995-02-27 | Cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6332495A JPH08236459A (en) | 1995-02-27 | 1995-02-27 | Cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08236459A true JPH08236459A (en) | 1996-09-13 |
Family
ID=13225977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6332495A Pending JPH08236459A (en) | 1995-02-27 | 1995-02-27 | Cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08236459A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
| US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
| KR100872194B1 (en) * | 2007-04-02 | 2008-12-09 | (주)에스투엠코리아 | Porous Quartz Block Manufacturing Method And A Gas Supply Tube Sturcture Using The Same |
| KR100948852B1 (en) * | 2003-03-14 | 2010-03-22 | 삼성모바일디스플레이주식회사 | Evaporation apparatus of thin layer |
-
1995
- 1995-02-27 JP JP6332495A patent/JPH08236459A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
| US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
| KR100948852B1 (en) * | 2003-03-14 | 2010-03-22 | 삼성모바일디스플레이주식회사 | Evaporation apparatus of thin layer |
| KR100872194B1 (en) * | 2007-04-02 | 2008-12-09 | (주)에스투엠코리아 | Porous Quartz Block Manufacturing Method And A Gas Supply Tube Sturcture Using The Same |
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