JPH05320977A - Substrate plating method - Google Patents
Substrate plating methodInfo
- Publication number
- JPH05320977A JPH05320977A JP4127699A JP12769992A JPH05320977A JP H05320977 A JPH05320977 A JP H05320977A JP 4127699 A JP4127699 A JP 4127699A JP 12769992 A JP12769992 A JP 12769992A JP H05320977 A JPH05320977 A JP H05320977A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- substrate
- cathode
- contact resistance
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は基板のメッキ方法に関す
る。半導体装置の製造工程等において半導体基板の片面
にメッキする場合にメッキ処理の間隔ごとに発生する基
板とカソード間の接触抵抗の増大化が問題となってい
る。本発明はこの解決方法として利用できる。FIELD OF THE INVENTION The present invention relates to a method for plating a substrate. In the process of manufacturing a semiconductor device or the like, when plating one surface of a semiconductor substrate, an increase in contact resistance between the substrate and the cathode, which occurs at each plating interval, poses a problem. The present invention can be used as a solution to this problem.
【０００２】[0002]
【従来の技術】基板とカソード間の接触抵抗の増大化を
防止するための従来技術を図２を用いて説明する。2. Description of the Related Art A conventional technique for preventing an increase in contact resistance between a substrate and a cathode will be described with reference to FIG.
【０００３】図２は基板の片面メッキ装置の模式説明図
である。図において，21はメッキ槽，22は複数のカソー
ドピンを有するカソード，23はアノード，24は被メッキ
処理基板，25は基板上に形成された通電用のパッドであ
る。FIG. 2 is a schematic explanatory view of a single-sided plating device for a substrate. In the figure, 21 is a plating tank, 22 is a cathode having a plurality of cathode pins, 23 is an anode, 24 is a substrate to be plated, and 25 is an energizing pad formed on the substrate.
【０００４】被メッキ処理基板24はパッド25がカソード
22の先端に接するようにしてその上に載せられ，メッキ
液をメッキ槽21の下側より導入し，メッキ槽21の上縁よ
り溢流させ，カソード22とアノード23との間に通電する
ことによりメッキが行われる。In the substrate 24 to be plated, the pad 25 is the cathode
It is placed on the tip of 22 so as to be in contact therewith, and the plating solution is introduced from the lower side of the plating tank 21, overflows from the upper edge of the plating tank 21, and electricity is applied between the cathode 22 and the anode 23. Plating is performed.
【０００５】このとき，カソードは基板のパッドに正確
に接続していることが必要であり，それを調べるため
に, 通電チェック処理として, 基板をセットした状態で
各カソードピン間の接触抵抗値を測定している。正常時
にはこの抵抗値は数Ωから数10Ωとなる。At this time, it is necessary that the cathode is accurately connected to the pad of the substrate, and in order to check this, the contact resistance value between each cathode pin is set in the state where the substrate is set as the energization check process. I'm measuring. In a normal state, this resistance value is several Ω to several tens of Ω.
【０００６】ところが，メッキ処理中にカソードに付着
したメッキ液が，次のメッキ処理までに乾き，この時カ
ソードの先端に不純物が析出し，基板が正常にセットさ
れているにもかかわらず，上記接触抵抗値が数10Ωから
無限大になることがあり，装置は基板が正常にセットさ
れていないものと判断し，アラームを出して処理が停止
されてしまう。However, the plating liquid adhered to the cathode during the plating process dries by the next plating process, and at this time impurities are deposited on the tip of the cathode, and the substrate is normally set even though The contact resistance value may increase from several tens of Ω to infinity, and the device determines that the board is not set properly, issues an alarm and stops processing.
【０００７】このための，解決手段として次の方法をと
ってきた。 基板上部より荷重が加え，カソードとパッドとを接
触させようとしていた。 上記の方法で回避できない場合は，人手によりカ
ソードを洗浄していた。To solve this problem, the following method has been adopted. A load was applied from the top of the substrate to try to bring the cathode and pad into contact with each other. If it cannot be avoided by the above method, the cathode was manually washed.
【０００８】[0008]
【発明が解決しようとする課題】従来方法に依る場合，
次のような問題点がある。 基板上部よりの荷重は，基板の反りや破損を生ずる
おそれがあり，あまり大きくできない。また，荷重によ
りカソードに付着した不純物等が押し潰されるだけでカ
ソードとパッドが接続する可能性は少ない。 人手による洗浄は発塵のおそれがある。When the conventional method is used,
There are the following problems. The load from the upper part of the board cannot be increased so much as it may cause the board to warp or break. Moreover, the possibility that the cathode and the pad are connected is small because the impurities and the like attached to the cathode are crushed by the load. Manual cleaning may generate dust.
【０００９】本発明は基板の片面メッキにおいて，メッ
キ処理の間隔ごとに発生する基板とカソード間の接触抵
抗の増大化を抑制し，装置の停止と補修による発塵を防
止することを目的とする。It is an object of the present invention to suppress an increase in contact resistance between the substrate and the cathode which occurs at each plating treatment interval in single-sided plating of a substrate and prevent dust generation due to stoppage and repair of the apparatus. ..
【００１０】[0010]
【課題を解決するための手段】上記課題の解決は，メッ
キ槽21内にその先端が該メッキ槽の上縁とほぼ同じ高さ
に複数設けられたカソード22とアノード23とを有する装
置を用い，被メッキ処理基板24を該カソードの先端に接
するようにしてその上に載せ，メッキ液を該メッキ槽の
下側より導入し該メッキ槽の上縁より溢流させ，該カソ
ードと該アノードとの間に通電することにより該被メッ
キ処理基板の片面にメッキする方法であって，該カソー
ドと該被メッキ処理基板の接触抵抗を確認する通電チェ
ック前に, 該メッキ液を噴流させて該カソードの先端を
該メッキ液で濡らした後に該通電チェックを行い, 引き
続いてメッキ処理を行う基板のメッキ方法により達成さ
れる。Means for Solving the Problems To solve the above problems, an apparatus having a plurality of cathodes 22 and anodes 23 provided in a plating tank 21 with its tip substantially at the same height as the upper edge of the plating tank is used. A substrate 24 to be plated is placed on the cathode so as to be in contact with the tip of the cathode, a plating solution is introduced from the lower side of the plating tank to overflow from the upper edge of the plating tank, A method of plating on one surface of the substrate to be plated by energizing the substrate for plating, wherein the plating solution is jetted to jet the plating liquid before the energization check for confirming the contact resistance between the cathode and the substrate to be plated. This is achieved by a method of plating a substrate in which the energization check is performed after wetting the tip of the substrate with the plating solution, and then the plating process is performed.
【００１１】[0011]
【作用】本発明は通電チェック前に，メッキ液を噴流さ
せてカソードの先端を湿った状態にして，乾燥による接
触不良をなくするようにしたものである。According to the present invention, before the energization check, the tip of the cathode is made wet by jetting the plating solution so as to eliminate contact failure due to drying.
【００１２】[0012]
【実施例】図１(A),(B) は本発明の実施例を従来例と対
比して示す処理のフローチャートである。図１(A) は実
施例，図１(B) は従来例を示す。図１(A) において，レ
シピー選択処理１で，噴流の設定時間を含むメッキ条件
を設定し，枚数確認処理２で処理枚数を確認し，ロード
処理３で基板を装置にロードし，噴流処理４でメッキ槽
下側よりメッキ液を噴流し，噴流設定時間か？５で判定
し，結果がYES ならば次の通電チェック処理６に進む。
NOならば噴流処理４を続ける。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1 (A) and 1 (B) are flow charts of processing showing an embodiment of the present invention in comparison with a conventional example. FIG. 1A shows an embodiment, and FIG. 1B shows a conventional example. In Fig. 1 (A), the recipe selection process 1 sets the plating conditions including the set time of the jet flow, the number confirmation process 2 confirms the number of processed plates, the loading process 3 loads the substrate into the apparatus, and the jet process 4 Is the plating liquid jetted from the bottom of the plating tank with the? If the result is YES, the process proceeds to the next energization check process 6.
If NO, the jet process 4 is continued.
【００１３】通電チェック処理６ではカソードとパッド
間の接続をチェックし，OKならばメッキ処理７でレシピ
ー選択処理１で設定したメッキ条件にしたがってメッキ
を行い，アンロード処理８で基板をアンロードして処理
を完結する。In the energization check process 6, the connection between the cathode and the pad is checked. If OK, the plating process 7 performs plating according to the plating conditions set in the recipe selection process 1, and the unload process 8 unloads the substrate. To complete the process.
【００１４】図１(B) において，レシピー選択処理11で
メッキ条件を設定し，その後の流れは実施例の噴流処理
４および噴流設定時間か？５がないだけで実施例と同様
である。In FIG. 1B, the plating condition is set in the recipe selection process 11, and the subsequent flow is the jet process 4 and the jet set time of the embodiment? It is similar to the embodiment except that there is no 5.
【００１５】このとき, 通電チェック処理６において前
記のように基板とカソード間の接触抵抗の増大化が発生
することが多い。実施例の効果をみるために図２の装置
を用いて以下の実験を行った。At this time, in the energization check process 6, the contact resistance between the substrate and the cathode often increases as described above. The following experiment was conducted using the apparatus of FIG. 2 in order to see the effect of the embodiment.
【００１６】実験１ 一度メッキ処理を行った後，１時間放置し通電チェ
ックを行ったところ，接触抵抗値が正常でないものが約
半数あった。 接触抵抗値が正常でないカソードに純水をかけて再
度接触抵抗を測ったところ，全数正常になった。 その後，１時間放置すると，ほぼ全数の接触抵抗値
が異常になった。Experiment 1 After the plating process was performed once, it was left for 1 hour and the energization was checked. As a result, about half of the samples had abnormal contact resistance values. When pure water was applied to the cathodes whose contact resistance was not normal, the contact resistance was measured again, and all were normal. After that, when left for 1 hour, almost all contact resistance values became abnormal.
【００１７】上記の結果より，析出した不純物が純水
により洗い流されるということではなく，の結果は純
水に溶けて導電性を持つようになったものと推測され
る。 実験２ 上記実験１のの状態で，接触抵抗値異常のメッキ槽
（カップ）に各々に対してメッキ液を噴流し，時間経過
に対する接触抵抗値の変化を測定した。From the above results, it is presumed that the precipitated impurities are not washed away by pure water, but that the result is that the impurities are dissolved in pure water and become conductive. Experiment 2 In the state of Experiment 1 described above, the plating solution was jetted into each of the plating tanks (cups) having abnormal contact resistance values, and changes in the contact resistance values with time were measured.
【００１８】表１は，メッキ液が基板に付いた時からの
時間経過に対する接触抵抗値の変化を示す。Table 1 shows changes in the contact resistance value with the lapse of time since the plating liquid was applied to the substrate.
【表１】 表１より，カソード先端に付着し乾燥した不純物による
接触不良は，通電チェック前にメッキ液を噴流すること
で正常になることが分かる。[Table 1] From Table 1, it can be seen that the contact failure due to the impurities adhering to the cathode tip and drying becomes normal by jetting the plating solution before the energization check.
【００１９】[0019]
【発明の効果】本発明によれば，基板の片面メッキにお
いて，メッキ処理の間隔ごとに発生する基板とカソード
間の接触抵抗の増大化を防止することができた。この結
果，装置の停止と補修による発塵を防止することができ
た。According to the present invention, it is possible to prevent an increase in the contact resistance between the substrate and the cathode, which occurs at each plating treatment interval, in the single-sided plating of the substrate. As a result, it was possible to prevent dust generation due to equipment stoppages and repairs.
【図面の簡単な説明】[Brief description of drawings]
【図１】 本発明の実施例を従来例と対比して示す処理
のフローチャートFIG. 1 is a flowchart of processing showing an embodiment of the present invention in comparison with a conventional example.
【図２】 基板の片面メッキ装置の模式説明図FIG. 2 is a schematic explanatory view of a single-sided plating device for a substrate.
21 メッキ槽 22 カソード 23 アノード 24 被メッキ処理基板 25 基板上に形成された通電用のパッド 21 Plating tank 22 Cathode 23 Anode 24 Substrates to be plated 25 Pads for energization formed on the substrate
Claims (1)
の上縁とほぼ同じ高さに複数設けられたカソード(22)と
アノード(23)とを有する装置を用い，被メッキ処理基板
(24)を該カソードの先端に接するようにしてその上に載
せ，メッキ液を該メッキ槽の下側より導入し該メッキ槽
の上縁より溢流させ，該カソードと該アノードとの間に
通電することにより該被メッキ処理基板の片面にメッキ
する方法であって，該カソードと該被メッキ処理基板の
接触抵抗を確認する通電チェック前に, 該メッキ液を噴
流させて該カソードの先端を該メッキ液で濡らした後に
該通電チェックを行い, 引き続いてメッキ処理を行うこ
とを特徴とする基板のメッキ方法。Claim: What is claimed is: 1. An apparatus having a plurality of cathodes (22) and anodes (23), the tip of which is provided in the plating tank (21) at substantially the same height as the upper edge of the plating tank, to be plated. substrate
(24) is placed on the cathode so as to be in contact with the tip thereof, and the plating solution is introduced from the lower side of the plating tank and overflows from the upper edge of the plating tank, and is placed between the cathode and the anode. A method of plating on one surface of the substrate to be plated by energizing, wherein the plating solution is jetted to spray the tip of the cathode before the energization check for confirming the contact resistance between the cathode and the substrate to be plated. A method of plating a substrate, characterized in that the energization check is performed after wetting with the plating solution, and then a plating process is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4127699A JP2953193B2 (en) | 1992-05-20 | 1992-05-20 | Substrate plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4127699A JP2953193B2 (en) | 1992-05-20 | 1992-05-20 | Substrate plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05320977A true JPH05320977A (en) | 1993-12-07 |
| JP2953193B2 JP2953193B2 (en) | 1999-09-27 |
Family
ID=14966521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4127699A Expired - Lifetime JP2953193B2 (en) | 1992-05-20 | 1992-05-20 | Substrate plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2953193B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998039796A1 (en) * | 1996-07-15 | 1998-09-11 | Semitool, Inc. | Plating system for semiconductor materials |
| WO1999031304A1 (en) * | 1997-12-16 | 1999-06-24 | Ebara Corporation | Plating device and method of confirming current feed |
| US5985126A (en) * | 1996-07-15 | 1999-11-16 | Semitool, Inc. | Semiconductor plating system workpiece support having workpiece engaging electrodes with distal contact part and dielectric cover |
| US6517689B1 (en) | 1998-07-10 | 2003-02-11 | Ebara Corporation | Plating device |
| US6716329B2 (en) * | 2000-05-02 | 2004-04-06 | Tokyo Electron Limited | Processing apparatus and processing system |
| EP1647614A2 (en) * | 1997-07-15 | 2006-04-19 | Semitool, Inc. | Plating system for semiconductor materials |
-
1992
- 1992-05-20 JP JP4127699A patent/JP2953193B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998039796A1 (en) * | 1996-07-15 | 1998-09-11 | Semitool, Inc. | Plating system for semiconductor materials |
| US5985126A (en) * | 1996-07-15 | 1999-11-16 | Semitool, Inc. | Semiconductor plating system workpiece support having workpiece engaging electrodes with distal contact part and dielectric cover |
| EP1647614A2 (en) * | 1997-07-15 | 2006-04-19 | Semitool, Inc. | Plating system for semiconductor materials |
| EP1647614A3 (en) * | 1997-07-15 | 2006-06-07 | Semitool, Inc. | Plating system for semiconductor materials |
| WO1999031304A1 (en) * | 1997-12-16 | 1999-06-24 | Ebara Corporation | Plating device and method of confirming current feed |
| US6500317B1 (en) | 1997-12-16 | 2002-12-31 | Ebara Corporation | Plating apparatus for detecting the conductivity between plating contacts on a substrate |
| KR100576757B1 (en) * | 1997-12-16 | 2006-05-03 | 가부시키가이샤 에바라 세이사꾸쇼 | A plating apparatus |
| US6517689B1 (en) | 1998-07-10 | 2003-02-11 | Ebara Corporation | Plating device |
| KR100632413B1 (en) * | 1998-07-10 | 2006-10-09 | 가부시키가이샤 에바라 세이사꾸쇼 | Plating equipment |
| US6716329B2 (en) * | 2000-05-02 | 2004-04-06 | Tokyo Electron Limited | Processing apparatus and processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2953193B2 (en) | 1999-09-27 |
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Legal Events
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|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990615 |