JPH05294673A - Production of glass coated with transparent electrically conductive film - Google Patents
Production of glass coated with transparent electrically conductive filmInfo
- Publication number
- JPH05294673A JPH05294673A JP12423392A JP12423392A JPH05294673A JP H05294673 A JPH05294673 A JP H05294673A JP 12423392 A JP12423392 A JP 12423392A JP 12423392 A JP12423392 A JP 12423392A JP H05294673 A JPH05294673 A JP H05294673A
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- Prior art keywords
- conductive film
- transparent conductive
- film
- transparent
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、透明導電膜被覆ガラス
の製造方法にかかり、特に、曲げ加工後、あるいは、強
化処理後の透明導電膜の抵抗増加がほとんどないか、も
しくは、その抵抗を減少することのできる透明導電膜被
覆ガラスの作成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a transparent conductive film-coated glass, and in particular, there is little or no increase in the resistance of the transparent conductive film after bending or after strengthening treatment. The present invention relates to a method for producing a transparent conductive film-coated glass that can be reduced.
【０００２】[0002]
【従来の技術】透明導電膜は、大気中で曲げ加工や強化
処理等の熱処理を施すと、その導電性が低下する。この
ことから、従来、曲げ加工、あるいは、強化処理を行っ
たガラスに透明導電膜を形成することにより、透明導電
膜被覆曲げガラス、あるいは、透明導電膜被覆強化ガラ
スを製造していた。2. Description of the Related Art When a transparent conductive film is subjected to heat treatment such as bending and strengthening in the atmosphere, its conductivity is lowered. Therefore, conventionally, a transparent conductive film is formed on a glass that has been subjected to a bending process or a strengthening treatment to manufacture a transparent conductive film-covered bent glass or a transparent conductive film-covered strengthened glass.
【０００３】[0003]
【発明が解決しようとする課題】前記した技術のうち、
曲げガラスに被覆する方法では、曲げガラスの形状に合
わせて、被覆条件を調整しなければならず、曲げガラス
上に一様な被覆を行うことは困難であり、異形状ガラス
上に同じ抵抗率の被覆を行うこともむずかしい。一方、
強化処理ガラスは、切断することが不可能であるため、
強化処理前に所望の形状に切断しておかなければなら
ず、被覆時のガラスの保持方法に制約が生じたり、１枚
の被覆ガラスを切り出して複数の所望形状のものを得る
ことができないなどの工程上の制約が生じる。Among the above-mentioned techniques,
In the method of coating bent glass, it is necessary to adjust the coating conditions according to the shape of bent glass, and it is difficult to perform uniform coating on bent glass. It is also difficult to perform the coating. on the other hand,
Since tempered glass cannot be cut,
It has to be cut into a desired shape before the strengthening treatment, so that the method of holding the glass at the time of coating is restricted, and one coated glass cannot be cut out to obtain a plurality of desired shapes. There is a restriction on the process.
【０００４】[0004]
【課題を解決するための手段】本発明では、技術的に確
立されている平面ガラスへの被覆技術を用いて、均一性
の高い透明導電膜被覆ガラスを製造し、次いで、一般に
行われている雰囲気制御の不必要な大気中での加熱によ
る曲げ加工、あるいは、強化処理等の熱処理を行い、か
かる熱処理後においても透明導電膜の抵抗上昇がほとん
どないか、もしくは、抵抗を低下することのできる透明
導電膜被覆ガラスを製造する方法を提供する。In the present invention, a transparent conductive film-coated glass having high uniformity is produced by using a technically well-established technique for coating a flat glass, and then it is generally carried out. Bending by heating in an atmosphere in which atmosphere control is not required, or heat treatment such as strengthening is performed, and the resistance of the transparent conductive film hardly increases even after such heat treatment, or the resistance can be reduced. Provided is a method for producing a transparent conductive film-coated glass.
【０００５】即ち、本発明は、透明導電膜を、ガラス基
板上に形成した後、この透明導電膜の上に、酸素バリヤ
性を有する透明金属酸化物膜を形成し、その後、ガラス
基板に熱処理を施すことを特徴とする透明導電膜被覆ガ
ラスの製造方法を提供するものである。That is, according to the present invention, after forming a transparent conductive film on a glass substrate, a transparent metal oxide film having an oxygen barrier property is formed on this transparent conductive film, and then heat treating the glass substrate. The present invention provides a method for producing a transparent conductive film-coated glass, which comprises:
【０００６】図１は、本発明により製造される基本的な
透明導電膜被覆ガラスの断面図である。１はガラス基
板、２は透明導電膜、３は酸素バリヤ性を有する透明金
属酸化物膜である。FIG. 1 is a sectional view of a basic transparent conductive film-coated glass produced according to the present invention. 1 is a glass substrate, 2 is a transparent conductive film, and 3 is a transparent metal oxide film having an oxygen barrier property.
【０００７】１のガラス基板としては、特に限定され
ず、ソーダライムガラス板、アルミノシリケートガラス
板、ホウケイ酸塩ガラス板や、熱線吸収ガラス板、着色
ガラス板等、各種ガラスが使用できる。The glass substrate 1 is not particularly limited, and various glasses such as soda lime glass plate, aluminosilicate glass plate, borosilicate glass plate, heat ray absorbing glass plate, colored glass plate and the like can be used.
【０００８】２の透明導電膜としては、スズを含む酸化
インジウム（以下、ＩＴＯという）、アンチモンあるい
はフッ素を含む酸化スズ、アルミニウム、ケイ素、ホウ
素のうち少なくとも１種を含む酸化亜鉛、のうち少なく
とも１種を主成分とする膜が好適に使用でき、単層から
成ってもよいし、これらを積層した複数層から成っても
よい。The transparent conductive film 2 includes at least one of indium oxide containing tin (hereinafter referred to as ITO), tin oxide containing antimony or fluorine, zinc oxide containing at least one of aluminum, silicon and boron. A film containing seeds as a main component can be preferably used and may be composed of a single layer or a plurality of layers in which these are laminated.
【０００９】透明導電膜２の膜厚は、透明性と導電性を
考慮して、用途に応じて決定されるが、自動車用や建築
用の熱線反射膜あるいは通電加熱用の導電膜として用い
る場合には７００Å以上程度が好ましく、自動車用や建
築用の電磁遮蔽膜として用いる場合には４０００Å以上
程度が好ましい。なお、前者の場合には、３０Ω／□程
度以下の面積抵抗が好ましく、また後者の場合には、５
Ω／□以下の面積抵抗が好ましい。The thickness of the transparent conductive film 2 is determined according to the application in consideration of transparency and conductivity, but when used as a heat ray reflective film for automobiles or constructions or a conductive film for electrical heating. Is preferably about 700 Å or more, and about 4000 Å or more when used as an electromagnetic shielding film for automobiles or construction. In the former case, a sheet resistance of about 30Ω / □ or less is preferable, and in the latter case, it is 5
A sheet resistance of Ω / □ or less is preferable.
【００１０】透明導電膜２の成膜法としては特に限定さ
れず、蒸着法、イオンプレーティング法、スパッタリン
グ法等のＰＶＤ法、ＣＶＤ法、液体を塗布後熱分解やゾ
ルゲル法により膜形成を行う湿式法、等適宜の方法が採
用可能である。The film forming method of the transparent conductive film 2 is not particularly limited, and the film is formed by PVD method such as vapor deposition method, ion plating method, sputtering method, CVD method, and after the liquid is applied, thermal decomposition or sol-gel method. An appropriate method such as a wet method can be adopted.
【００１１】３は酸素バリヤ性を有する透明金属酸化物
膜であり、緻密で（多孔質、即ちポーラスでなく）、結
晶粒界部分の酸素透過性が低い膜である。材質として
は、スズ、亜鉛、タンタル、ニオブ、クロム、ケイ素、
アルミニウム、ジルコニウムのうち少なくとも１種を含
む酸化物（例えば、酸化スズ、酸化亜鉛、酸化タンタ
ル、酸化ニオブ、酸化クロム、二酸化ケイ素、酸化アル
ミニウム、酸化ジルコニウム、ジルコニウムとケイ素を
含む酸化物、アルミニウムとケイ素を含む酸化物など）
が挙げられるが、同じ材質でも、結晶粒界部分の酸素透
過性が低くなるように成膜する必要がある。Reference numeral 3 is a transparent metal oxide film having an oxygen barrier property, which is dense (porosity, that is, not porous) and has a low oxygen permeability in the crystal grain boundary portion. Materials include tin, zinc, tantalum, niobium, chromium, silicon,
An oxide containing at least one of aluminum and zirconium (for example, tin oxide, zinc oxide, tantalum oxide, niobium oxide, chromium oxide, silicon dioxide, aluminum oxide, zirconium oxide, oxide containing zirconium and silicon, aluminum and silicon. (Including oxides)
However, even if the same material is used, it is necessary to form a film so that the oxygen permeability of the crystal grain boundary portion becomes low.
【００１２】また、透明導電膜２が、電気キャリアとし
て不純物原子を含む膜である場合には、透明金属酸化物
膜３も、かかる不純物原子と同じ原子を含む膜であると
さらに好ましい。例えば、透明金属酸化物膜３として
は、透明導電膜２がＩＴＯの場合には、不純物原子を含
まない酸化スズ膜が、また透明導電膜２がアルミニウム
ドープ酸化亜鉛の場合には、酸化アルミニウム膜が、ま
た透明導電膜２がケイ素ドープ酸化亜鉛の場合には、二
酸化ケイ素膜であることが好ましい。When the transparent conductive film 2 is a film containing an impurity atom as an electric carrier, the transparent metal oxide film 3 is more preferably a film containing the same atom as the impurity atom. For example, as the transparent metal oxide film 3, a tin oxide film containing no impurity atoms is used when the transparent conductive film 2 is ITO, and an aluminum oxide film is used when the transparent conductive film 2 is aluminum-doped zinc oxide. However, when the transparent conductive film 2 is silicon-doped zinc oxide, it is preferably a silicon dioxide film.
【００１３】これは、不純物原子を電気キャリアとして
含む透明導電膜を熱処理するとこの不純物原子が透明金
属酸化物膜３との間の界面に排出される傾向があるが、
不純物原子と同じ原子を含む膜を透明金属酸化物膜３と
して用いると、この傾向を低減することもできるからで
ある。This is because when a transparent conductive film containing impurity atoms as electric carriers is heat-treated, the impurity atoms tend to be discharged to the interface with the transparent metal oxide film 3.
This is because if a film containing the same atoms as the impurity atoms is used as the transparent metal oxide film 3, this tendency can be reduced.
【００１４】透明金属酸化物膜３の膜厚は、透明導電膜
の厚さに関係する。透明金属酸化物の厚さが同じであれ
ば、熱処理中にこれら透明金属酸化物膜から透明導電膜
へ移動し、またはわずかに透明金属酸化物膜を通って大
気中から拡散して、透明導電膜を酸化する酸素の量は、
同じであるから、透明導電膜が厚ければ、その透明導電
膜の単位体積あたりに平均したキャリア濃度の減少割合
は小さくなる。The thickness of the transparent metal oxide film 3 is related to the thickness of the transparent conductive film. If the thickness of the transparent metal oxide is the same, the transparent metal oxide film moves to the transparent conductive film during the heat treatment, or slightly diffuses from the atmosphere through the transparent metal oxide film to give a transparent conductive film. The amount of oxygen that oxidizes the film is
Since the same, the thicker the transparent conductive film, the smaller the average reduction rate of the carrier concentration per unit volume of the transparent conductive film.
【００１５】実験結果によると、曲げ加工に対応する加
熱条件（５５０〜７５０℃）では、ＩＴＯ（透明導電膜
２）の膜厚が６５００Åのとき、この上に形成する酸化
亜鉛膜（透明金属酸化物膜３）の膜厚は、１００Åあれ
ば充分で、ＩＴＯの膜厚が１２２００Åの時は、酸化亜
鉛の膜厚は、７０Åで充分である。According to the experimental results, under the heating condition (550 to 750 ° C.) corresponding to the bending process, when the film thickness of ITO (transparent conductive film 2) is 6500Å, the zinc oxide film (transparent metal oxide film) formed thereon is formed. The film thickness of the material film 3) is sufficient if it is 100 Å. When the film thickness of ITO is 12200 Å, the film thickness of zinc oxide is 70 Å.
【００１６】透明金属酸化物３の成膜法は、特に限定さ
れず、蒸着法、イオンプレーテイング法、スパッタリン
グ法等のＰＶＤ法、ＣＶＤ法、液体を塗布後熱分解やゾ
ルゲル法により膜形成を行う湿式法等、適宜の方法が採
用可能である。なかでも緻密でより酸素バリヤ性の高い
膜が形成可能なスパッタリング法が最も好ましい。The method for forming the transparent metal oxide 3 is not particularly limited, and the film is formed by a PVD method such as a vapor deposition method, an ion plating method, a sputtering method, a CVD method, a thermal decomposition or a sol-gel method after applying a liquid. An appropriate method such as a wet method may be employed. Among them, the sputtering method is most preferable because it can form a dense film having a higher oxygen barrier property.
【００１７】本発明においては、ガラス基板１上に、透
明導電膜２、透明金属酸化物膜３を形成した後、熱処理
を行う。熱処理としては、大気中３００〜７５０℃の加
熱が挙げられる。また、加熱と同時にガラス基板に曲げ
加工を施すか、または加熱後に強化処理を施すこともで
きる。また、上記加熱は、大気中のみならず、特殊な場
合には、その他の適宜の雰囲気ガス中でもよい。加熱の
結果、透明導電膜２と透明金属酸化物膜３との界面で酸
素や金属原子の拡散が一部で発生する。In the present invention, after forming the transparent conductive film 2 and the transparent metal oxide film 3 on the glass substrate 1, heat treatment is performed. Examples of the heat treatment include heating at 300 to 750 ° C. in the atmosphere. Further, the glass substrate may be bent at the same time as the heating, or may be strengthened after the heating. The heating may be performed not only in the atmosphere but also in other appropriate atmosphere gas in special cases. As a result of heating, oxygen and metal atoms are partially diffused at the interface between the transparent conductive film 2 and the transparent metal oxide film 3.
【００１８】本発明においては、膜の密着力向上、光学
特性調整等を目的として、ガラス基板１と透明導電膜２
の間、あるいは、透明導電膜２と透明金属酸化物膜３の
間等に、他の膜を介在させてもよい。また、透明金属酸
化物膜３の上に、耐擦傷性、耐摩耗性、化学的耐久性等
の向上を目的として、他の膜を形成してもよい。In the present invention, the glass substrate 1 and the transparent conductive film 2 are used for the purpose of improving the adhesion of the film, adjusting the optical characteristics and the like.
Another film may be interposed between the transparent conductive film 2 and the transparent metal oxide film 3. Further, another film may be formed on the transparent metal oxide film 3 for the purpose of improving scratch resistance, abrasion resistance, chemical durability and the like.
【００１９】[0019]
【作用】酸素欠陥、あるいは、過剰金属をその電気キャ
リアの主な源とする透明導電膜は、その組成が加熱時の
酸素分圧により大きく左右されるため、曲げ加工、ある
いは、強化処理の際、その雰囲気である大気中の酸素
は、透明導電膜に取り込まれ、その電気キャリアが減少
する。一方、キャリアの易動度を左右する透明導電膜の
結晶性は、加熱処理（３００℃程度以上の加熱処理）に
より改善される。[Function] Since the composition of the transparent conductive film containing oxygen defects or excess metal as the main source of the electric carrier is largely influenced by the oxygen partial pressure during heating, it is difficult to bend or strengthen the transparent conductive film. Oxygen in the atmosphere, which is the atmosphere, is taken into the transparent conductive film and its electric carriers are reduced. On the other hand, the crystallinity of the transparent conductive film which influences the mobility of the carrier is improved by heat treatment (heat treatment at about 300 ° C. or higher).
【００２０】これらのことから、キャリア濃度減少によ
る抵抗増加と易動度増加による抵抗減少の相反する２つ
の効果の大小関係で、加熱処理により透明導電膜の抵抗
は、増加したり減少したりする。曲げ加工に対応する大
気中の加熱処理を行うと、通常、１００００Å以下の厚
さのＩＴＯでは、その抵抗は増加する。From these facts, the resistance of the transparent conductive film is increased or decreased by the heat treatment depending on the magnitude relationship between two contradictory effects of the resistance increase due to the carrier concentration decrease and the resistance decrease due to the mobility increase. .. When heat treatment in the atmosphere corresponding to the bending process is performed, the resistance of ITO having a thickness of 10000 Å or less usually increases.
【００２１】本発明では、加熱時に抵抗増加を生じせし
める酸素の透明導電膜への取り込みを減少させるため
に、酸素バリヤ性の高い透明金属酸化物膜を透明導電膜
上に形成した。ここでは、透明導電膜のオーバーコート
層として、大気中での加熱処理に対して安定であること
から金属酸化物膜を選び、さらに、膜全体の透過性を維
持するために金属酸化物のうち、透明である物を選ん
だ。この結果、加熱による透明導電膜の抵抗増加を低減
せしめ、さらに、抵抗を減少させることをも可能とな
る。In the present invention, a transparent metal oxide film having a high oxygen barrier property is formed on the transparent conductive film in order to reduce the incorporation of oxygen into the transparent conductive film, which causes an increase in resistance during heating. Here, as the overcoat layer of the transparent conductive film, a metal oxide film is selected because it is stable against heat treatment in the air, and further, among the metal oxides in order to maintain the transparency of the entire film. , I chose a transparent one. As a result, it is possible to reduce the increase in resistance of the transparent conductive film due to heating and further reduce the resistance.
【００２２】[0022]
［実施例１］平面ガラス（ソーダライムシリケートガラ
ス板）上に、ＩＴＯ（Ｉｎ2 Ｏ3 ９６重量％とＳｎＯ2
４重量％の混合物）を原料とし、アーク放電プラズマ流
により原料を蒸発させるイオンプレーティング法により
ＩＴＯ膜を６５００Å形成した。一方、同様にＩＴＯ膜
を６５００Å形成した後、スズ・ターゲットを酸素とア
ルゴンの混合気体によりスパッタリングして、酸化スズ
をその膜厚を１００Å、２００Å、３００Åの３通りに
変えて形成した。[Example 1] ITO (In2 O3 96% by weight and SnO2 was formed on a flat glass (soda lime silicate glass plate).
4 wt% of the mixture) was used as a raw material, and an ITO film was formed at 6500 Å by an ion plating method in which the raw material was evaporated by an arc discharge plasma flow. On the other hand, similarly, after forming an ITO film of 6500Å, a tin target was sputtered with a mixed gas of oxygen and argon to form tin oxide with three different film thicknesses of 100Å, 200Å and 300Å.
【００２３】これらあわせて４通りの透明導電膜被覆ガ
ラスを曲げ工程に準じて、電気炉により、大気雰囲気で
約６３０℃まで加熱した後、曲げ加工を行った。加熱処
理後の透明導電膜被覆ガラスの抵抗、キャリア濃度、易
動度の加熱処理前のそれらに対するそれぞれの比を表１
に示す。In accordance with the bending process, four kinds of transparent conductive film-coated glass were heated to about 630 ° C. in an air atmosphere in an electric furnace and then bent. Table 1 shows the respective ratios of resistance, carrier concentration, and mobility of the transparent conductive film-coated glass after the heat treatment to those before the heat treatment.
Shown in.
【００２４】[0024]
【表１】 [Table 1]
【００２５】［実施例２］平面ガラス（ソーダライムシ
リケートガラス板）上に、実施例１と同様の方法で、Ｉ
ＴＯ膜の膜厚を２５００Å、４５００Å、１２０００Å
の３通りに変えて形成した後、スズ・ターゲットを酸素
とアルゴンの混合気体によりスパッタリングして、酸化
スズを１００Åの膜厚で形成した。これらあわせて３通
りの透明導電膜被覆ガラスを実施例１と同様に加熱処理
を行った。加熱処理後の透明導電膜被覆ガラスの抵抗、
キャリア濃度、易動度の加熱処理前のそれらに対するそ
れぞれの比を表２に示す。[Example 2] On a flat glass (soda lime silicate glass plate), in the same manner as in Example 1, I
The thickness of TO film is 2500Å, 4500Å, 12000Å
Then, the tin target was sputtered with a mixed gas of oxygen and argon to form tin oxide with a film thickness of 100 Å. In total, three types of transparent conductive film-coated glass were heat-treated in the same manner as in Example 1. Resistance of transparent conductive film-coated glass after heat treatment,
Table 2 shows the respective ratios of carrier concentration and mobility to those before heat treatment.
【００２６】[0026]
【表２】 [Table 2]
【００２７】［実施例３］平面ガラス（ソーダライムシ
リケートガラス板）上に、実施例１と同様の方法により
ＩＴＯ膜をその膜厚を２５００Å、４５００Å、１２０
００Åの３通りに変えて形成した後、亜鉛・ターゲット
を酸素とアルゴンの混合気体によりスパッタリングし
て、酸化亜鉛を１００Å形成した。これらあわせて３通
りの透明導電膜被覆ガラスを実施例１と同様に加熱処理
を行った。加熱処理後の透明導電膜被覆ガラスの抵抗、
キャリア濃度、易動度の加熱処理前のそれらに対するそ
れぞれの比を表３に示す。[Example 3] An ITO film having a thickness of 2500Å, 4500Å, 120 was formed on a flat glass (soda lime silicate glass plate) in the same manner as in Example 1.
After being formed in three different ways of 00Å, a zinc target was sputtered with a mixed gas of oxygen and argon to form 100Å zinc oxide. In total, three types of transparent conductive film-coated glass were heat-treated in the same manner as in Example 1. Resistance of transparent conductive film-coated glass after heat treatment,
Table 3 shows the respective ratios of the carrier concentration and the mobility to those before the heat treatment.
【００２８】[0028]
【表３】 [Table 3]
【００２９】[0029]
【発明の効果】通常用いられる平面ガラス用被覆装置を
使うことにより、透明導電膜のガラス上への形成を行う
ことができ、このため被覆制御が容易で、これにより、
高品質で一様な低抵抗な透明導電膜被覆曲げガラスを低
コストで得ることができる。The transparent conductive film can be formed on the glass by using a flat glass coating device which is usually used, and therefore, the coating control is easy, which allows
It is possible to obtain a high quality, uniform and low resistance transparent glass coated with a transparent conductive film at a low cost.
【００３０】大面積の平面ガラスへの透明導電膜被覆を
行った後に、所望の形状に切断し、あるいは、平面ガラ
スを所望の形状に切断した後、その表面に透明導電膜被
覆を行った後、強化処理あるいは曲げ加工、あるいは曲
げ・強化加工を行うことができるため、従来の切断、強
化処理あるいは曲げ加工、被覆の順の工程に比べ、生産
性が向上する。After coating a large area flat glass with a transparent conductive film, it is cut into a desired shape, or after the flat glass is cut into a desired shape, the surface thereof is covered with a transparent conductive film. Since the strengthening treatment or the bending work or the bending / strengthening work can be performed, the productivity is improved as compared with the conventional steps of cutting, strengthening treatment or bending work, and coating.
【００３１】また、雰囲気制御の不必要な大気中で曲げ
加工、あるいは、強化処理を行うことができるため、従
来の技術がそのまま適用でき、加工費がきわめて安価と
なる。また、曲げ加工、強化処理に伴い、抵抗減少もは
かることができる。Further, since the bending process or the strengthening process can be performed in the atmosphere where the atmosphere control is unnecessary, the conventional technique can be applied as it is, and the processing cost becomes extremely low. In addition, the resistance can be reduced due to the bending process and the strengthening process.
【００３２】さらに、抵抗減少を目的として、加熱処理
を行うこともでき、さらにまた透明金属酸化物膜は、か
かる加熱により耐薬品性、耐擦傷性等が向上し、これら
の結果として耐久性の向上をはかることもできる。Further, heat treatment may be carried out for the purpose of reducing the resistance, and further, the transparent metal oxide film is improved in chemical resistance, scratch resistance and the like by such heating, and as a result of these, durability is improved. It can also be improved.
【図１】本発明により製造される基本的な透明導電膜被
覆ガラスの断面図。FIG. 1 is a sectional view of a basic transparent conductive film-coated glass produced according to the present invention.
１：ガラス基板 ２：透明導電膜 ３：透明金属酸化物膜 1: Glass substrate 2: Transparent conductive film 3: Transparent metal oxide film
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１０月２３日[Submission date] October 23, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２２[Name of item to be corrected] 0022
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００２２】[0022]
【実施例】 ［実施例１］平面ガラス（ソーダライムシリケートガラ
ス板）上に、ＩＴＯ（Ｉｎ2 Ｏ3 ９６重量％とＳｎＯ2
４重量％の混合物）を原料とし、アーク放電プラズマ流
により原料を蒸発させるイオンプレーティング法により
ＩＴＯ膜を６５００Å形成した。一方、同様にＩＴＯ膜
を６５００Å形成した後、スズ・ターゲットを酸素とア
ルゴンの混合気体によりスパッタリングして、酸化スズ
をその膜厚を１００Å、２００Å、３００Åの３通りに
変えて形成した。Example 1 ITO (In 2 O 3 96% by weight and SnO 2 ) was placed on a flat glass (soda lime silicate glass plate).
4 wt% of the mixture) was used as a raw material, and an ITO film was formed at 6500 Å by an ion plating method in which the raw material was evaporated by an arc discharge plasma flow. On the other hand, similarly, after forming an ITO film of 6500Å, a tin target was sputtered with a mixed gas of oxygen and argon to form tin oxide with three different film thicknesses of 100Å, 200Å and 300Å.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 門脇 一生 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Issei Kadowaki 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa Prefecture Asahi Glass Co., Ltd. Central Research Laboratory
Claims (5)
後、この透明導電膜の上に、酸素バリヤ性を有する透明
金属酸化物膜を形成し、その後、ガラス基板に熱処理を
施すことを特徴とする透明導電膜被覆ガラスの製造方
法。1. A transparent conductive film is formed on a glass substrate, a transparent metal oxide film having an oxygen barrier property is formed on the transparent conductive film, and then the glass substrate is subjected to heat treatment. A method for producing a transparent conductive film-coated glass, which is characterized.
から７５０℃の範囲の加熱を行うことを特徴とする請求
項１の透明導電膜被覆ガラスの製造方法。2. A heat treatment in air at 300 ° C.
The method for producing a transparent conductive film-coated glass according to claim 1, wherein heating is performed in the range from 1 to 750 ° C.
に曲げ加工を施すか、あるいは、加熱後にガラス基板に
強化処理を施すことを特徴とする請求項２の透明導電膜
被覆ガラスの製造方法。3. The method for producing a transparent conductive film-coated glass according to claim 2, wherein the glass substrate is bent while heating or after heating, or the glass substrate is tempered after heating.
ム、アンチモンあるいはフッ素を含む酸化スズ、アルミ
ニウムとケイ素とホウ素のうち少なくとも１種を含む酸
化亜鉛、のうちいずれか１種を主成分とする膜であるこ
とを特徴とする請求項１〜３いずれか１項の透明導電膜
被覆ガラスの製造方法。4. A transparent conductive film contains as a main component any one of indium oxide containing tin, antimony or tin oxide containing fluorine, and zinc oxide containing at least one of aluminum, silicon and boron. It is a film, The manufacturing method of the transparent conductive film coating glass of any one of Claims 1-3.
が、スズ、亜鉛、タンタル、ニオブ、クロム、ケイ素、
アルミニウム、ジルコニウムのうち少なくとも１種を含
む酸化物膜であることを特徴とする請求項１〜４いずれ
か１項の透明導電膜被覆ガラスの製造方法。5. A transparent metal oxide film having an oxygen barrier property comprises tin, zinc, tantalum, niobium, chromium, silicon,
It is an oxide film containing at least 1 sort (s) among aluminum and zirconium, The manufacturing method of the transparent conductive film coating glass of any one of Claims 1-4 characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12423392A JPH05294673A (en) | 1992-04-17 | 1992-04-17 | Production of glass coated with transparent electrically conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12423392A JPH05294673A (en) | 1992-04-17 | 1992-04-17 | Production of glass coated with transparent electrically conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05294673A true JPH05294673A (en) | 1993-11-09 |
Family
ID=14880274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12423392A Withdrawn JPH05294673A (en) | 1992-04-17 | 1992-04-17 | Production of glass coated with transparent electrically conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05294673A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2735123A1 (en) * | 1995-06-09 | 1996-12-13 | Glaverbel | SOLAR PROTECTION WINDOWS AND METHOD FOR MANUFACTURING SUCH GLAZING |
| US6231971B1 (en) | 1995-06-09 | 2001-05-15 | Glaverbel | Glazing panel having solar screening properties |
| JP2006117975A (en) * | 2004-10-19 | 2006-05-11 | Kawasaki Heavy Ind Ltd | Structure of thermal barrier coating, and method for manufacturing thermal barrier coating |
| CN1317740C (en) * | 2004-12-01 | 2007-05-23 | 四川大学 | Preparation of SnOz transient layer by high-temperature oxide method |
| WO2011019040A1 (en) * | 2009-08-14 | 2011-02-17 | 旭硝子株式会社 | Substrate having transparent conductive film attached thereto, and substrate for plasma display panel |
| JP2011086855A (en) * | 2009-10-19 | 2011-04-28 | Showa Denko Kk | Method of manufacturing semiconductor light-emitting element |
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| KR101337967B1 (en) * | 2011-07-12 | 2013-12-09 | (주)솔라세라믹 | Manufacturing Mothod of F-dopped Tin oxide film with bending processability |
| JP2014041931A (en) * | 2012-08-22 | 2014-03-06 | Honda Motor Co Ltd | Method for manufacturing solar cell |
| JP2017227672A (en) * | 2016-06-20 | 2017-12-28 | 株式会社アルバック | Substrate with transparent conductive film, liquid crystal panel and method for producing substrate with transparent conductive film |
-
1992
- 1992-04-17 JP JP12423392A patent/JPH05294673A/en not_active Withdrawn
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7803463B2 (en) | 1995-06-09 | 2010-09-28 | Agc Flat Glass Europe Sa | Glazing panel having solar screening properties |
| US7037555B2 (en) | 1995-06-09 | 2006-05-02 | Glaverbel | Method of manufacturing a glazing panel |
| BE1010321A5 (en) * | 1995-06-09 | 1998-06-02 | Glaverbel | Glass solar protection and method for manufacturing a glass tel. |
| US6231971B1 (en) | 1995-06-09 | 2001-05-15 | Glaverbel | Glazing panel having solar screening properties |
| FR2735123A1 (en) * | 1995-06-09 | 1996-12-13 | Glaverbel | SOLAR PROTECTION WINDOWS AND METHOD FOR MANUFACTURING SUCH GLAZING |
| NL1003294C2 (en) * | 1995-06-09 | 1997-04-03 | Glaverbel | Glazing panel with sunlight filtering properties and a method of manufacturing such a panel. |
| US7622186B2 (en) | 1995-06-09 | 2009-11-24 | Agc Flat Glass Europe Sa | Glazing panel having solar screening properties |
| JP2006117975A (en) * | 2004-10-19 | 2006-05-11 | Kawasaki Heavy Ind Ltd | Structure of thermal barrier coating, and method for manufacturing thermal barrier coating |
| CN1317740C (en) * | 2004-12-01 | 2007-05-23 | 四川大学 | Preparation of SnOz transient layer by high-temperature oxide method |
| WO2011019040A1 (en) * | 2009-08-14 | 2011-02-17 | 旭硝子株式会社 | Substrate having transparent conductive film attached thereto, and substrate for plasma display panel |
| CN102471147A (en) * | 2009-08-14 | 2012-05-23 | 旭硝子株式会社 | Substrate having transparent conductive film attached thereto, and substrate for plasma display panel |
| JP2011086855A (en) * | 2009-10-19 | 2011-04-28 | Showa Denko Kk | Method of manufacturing semiconductor light-emitting element |
| KR101279930B1 (en) * | 2011-07-12 | 2013-07-05 | (주)솔라세라믹 | Manufacturing Mothod of Curved Surface F-dopped Tin oxide film with Nonlinear In-line Lifting |
| KR101337967B1 (en) * | 2011-07-12 | 2013-12-09 | (주)솔라세라믹 | Manufacturing Mothod of F-dopped Tin oxide film with bending processability |
| JP2014041931A (en) * | 2012-08-22 | 2014-03-06 | Honda Motor Co Ltd | Method for manufacturing solar cell |
| JP2017227672A (en) * | 2016-06-20 | 2017-12-28 | 株式会社アルバック | Substrate with transparent conductive film, liquid crystal panel and method for producing substrate with transparent conductive film |
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