JPH05283488A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH05283488A JPH05283488A JP4103633A JP10363392A JPH05283488A JP H05283488 A JPH05283488 A JP H05283488A JP 4103633 A JP4103633 A JP 4103633A JP 10363392 A JP10363392 A JP 10363392A JP H05283488 A JPH05283488 A JP H05283488A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- light
- marking
- semiconductor
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の構造に関
し、特に特性検査後の不良マーキングを容易に実施する
ための半導体ウェハやペレットの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor device, and more particularly to a structure of a semiconductor wafer or a pellet for easily performing defective marking after characteristic inspection.
【０００２】[0002]
【従来の技術】従来の半導体ウェハやペレットの特性検
査後の不良マーキング方法は、インク・マーキング方式
又は破壊によるマーキング方式の２つに大別される。イ
ンク・マーキング方式は、図３に示すように、半導体ペ
レット２１上の各ボンディングパッド部２２に針状電極
２３を接触させて特性検査を実施した後、特性検査不合
格の場合に、前記半導体ペレット２１上の中央部にイン
ク２４を打点し、ベーク処理等を行い次工程へ進めてい
る。2. Description of the Related Art Conventional defective marking methods after characteristic inspection of semiconductor wafers or pellets are roughly classified into ink marking methods and marking methods by destruction. In the ink marking method, as shown in FIG. 3, after performing a characteristic inspection by contacting each bonding pad portion 22 on the semiconductor pellet 21 with a needle-shaped electrode 23, if the characteristic inspection fails, the semiconductor pellet Ink 24 is spotted on the central portion of 21 and baking processing is performed to proceed to the next step.
【０００３】又、破壊によるマーキング方式は、図４に
示すように、半導体ペレット２１上の各ボンディングパ
ッド部２２に針状電極２３を接触させて特性検査を実施
し、特性検査不合格の場合に、強パワーのレーザ照射
や、電気的パターンの溶断による手段で、前記半導体ペ
レット２１上に破壊個所２５を設けることにより不良マ
ーキングとし、次工程へ進めている。In addition, as shown in FIG. 4, the marking method by destruction is performed by contacting each bonding pad portion 22 on the semiconductor pellet 21 with a needle-shaped electrode 23 to perform a characteristic inspection, and when the characteristic inspection fails. Defect marking is made by providing a breaking point 25 on the semiconductor pellet 21 by means of high power laser irradiation or fusing of an electric pattern, and the process proceeds to the next step.
【０００４】[0004]
【発明が解決しようとする課題】前記したインク・マー
キング方式では、インクのセッティングやベーク後処理
等の時間がかかり、また微小半導体ペレットのインク・
マーキングを実施する場合、インクのセッティングの良
否により、隣接ペレットへの汚染の可能性が大きいとい
う問題点があった。又、破壊によるマーキング方式は、
不良半導体ペレットの内部パターンを破壊してしまうた
め、不良解析が不可能になるという問題点があった。本
発明の目的は、隣接ペレットへの影響をなくし、かつ不
良解析が不可能になることを防止した半導体装置を提供
することにある。In the ink marking method described above, it takes time for ink setting and post-baking treatment, and ink for fine semiconductor pellets is used.
When carrying out marking, there is a problem that there is a high possibility of contamination of adjacent pellets depending on the quality of ink setting. In addition, the marking method by destruction is
There is a problem that failure analysis becomes impossible because the internal pattern of the defective semiconductor pellet is destroyed. An object of the present invention is to provide a semiconductor device that eliminates the influence on adjacent pellets and prevents failure analysis from becoming impossible.
【０００５】[0005]
【課題を解決するための手段】本発明は、半導体ウェハ
やペレット等の表面保護膜上のボンディングパッド部を
除く領域に感光性材料をコーティングした構成とする。
感光性材料として光照射された部分が現像処理後に残さ
れるフォトレジストを用いる。又、他の感光性材料とし
て光照射された部分が変色するフォトクロミック材料を
用いる。According to the present invention, a photosensitive material is coated on a region of a surface protective film such as a semiconductor wafer or a pellet except a bonding pad portion.
As the photosensitive material, a photoresist in which the light-irradiated portion is left after the development processing is used. Further, as another photosensitive material, a photochromic material whose light-irradiated portion is discolored is used.
【０００６】[0006]
【作用】半導体ウェハやペレット等の特性検査後に、感
光性材料に光照射し、現像してその部分を残し、或いは
変色させることでマーキングを実行する。After marking the characteristics of semiconductor wafers, pellets, etc., marking is performed by irradiating the photosensitive material with light and developing it to leave that portion or discolor it.
【０００７】[0007]
【実施例】次に、本発明について図面を参照して説明す
る。図１（ａ）は本発明の第１実施例の半導体ペレット
の断面図である。所要の素子が形成された半導体ペレッ
ト１の表面保護膜４上のボンディングパッド部２，３を
除く全面にフォトレジスト５をコーティングしている。
そして、前記ボンディングパッド部２，３に各針状電極
６，７を接触させて特性検査を実施し、特性検査不合格
の場合にペレット１の表面のフォトレジスト５にレーザ
８による光照射を実施し、続いてスプレー方式の現像ノ
ズル９から現像液１０を噴射し現像を行う。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1A is a sectional view of a semiconductor pellet according to the first embodiment of the present invention. A photoresist 5 is coated on the entire surface of the surface protection film 4 of the semiconductor pellet 1 on which the required elements are formed except the bonding pad portions 2 and 3.
Then, the needle-shaped electrodes 6 and 7 are brought into contact with the bonding pad portions 2 and 3 to perform a characteristic inspection, and when the characteristic inspection fails, the photoresist 5 on the surface of the pellet 1 is irradiated with light by a laser 8. Then, the developing solution 9 is sprayed from the spray type developing nozzle 9 to develop.
【０００８】図１（ｂ）は、図１（ａ）に示した半導体
ペレットの現像後の断面図を示す。光照射部分のフォト
レジスト５Ａは、半導体ペレット１の表面保護膜４上に
残されており、これが不良マーキングとして識別され
る。FIG. 1B shows a sectional view of the semiconductor pellet shown in FIG. 1A after development. The photoresist 5A in the light irradiation portion is left on the surface protection film 4 of the semiconductor pellet 1, and this is identified as a defective marking.
【０００９】図２は本発明の第２実施例の半導体ペレッ
トの断面図である。半導体ペレット１１の表面保護膜１
４上のボンディングパッド１２，１３を除く全面に、フ
ォトクロミック材料１５をコーティングした構造を形成
し、前記ボンディングパッド部１２，１３に各針状態電
極１６，１７を接触させて特性検査を実施し、特性検査
不合格の場合、レーザ１８による光照射を実施する。光
の照射部分１５Ａが、前記フォトクロミック材料１５の
持っている光酸化還元反応によって無色から有色へ変化
され、この光の照射部分１５Ａが不良マーキングとし、
識別される。因みに、フォトクロミック材料１５がＣａ
Ｆ2 に希土類元素をドープした材料の場合、 500ＷのＨ
ｇランプを用い２分間程度の照射で着色は飽和する。
又、消去は可視光照射と 150℃，２分間程度の加熱で行
える。FIG. 2 is a sectional view of a semiconductor pellet according to the second embodiment of the present invention. Surface protective film 1 of semiconductor pellet 11
4 has a structure in which the photochromic material 15 is coated on the entire surface except the bonding pads 12 and 13, and the needle state electrodes 16 and 17 are brought into contact with the bonding pad portions 12 and 13, and a characteristic inspection is performed. When the inspection fails, light irradiation by the laser 18 is performed. The light-irradiated portion 15A is changed from colorless to colored by the photo-oxidation reduction reaction of the photochromic material 15, and the light-irradiated portion 15A is a defective marking.
To be identified. Incidentally, the photochromic material 15 is Ca
In the case of a material in which F 2 is doped with a rare earth element, H of 500 W
The coloring is saturated by irradiation with a g lamp for about 2 minutes.
Erasure can be performed by irradiation with visible light and heating at 150 ° C for about 2 minutes.
【００１０】[0010]
【発明の効果】以上説明したように本発明は、半導体ウ
ェハやペレットの表面保護膜上のボンディングパッド部
を除く全面に感光性材料をコーティングすることにより
光照射による光化学反応を利用してマーキングを実行
し、微小ペレットの不良マーキングを隣接ペレットに影
響を与えることなく容易に実施することができ、かつ不
良ウェハや不良ペレットの不良解析も容易に実施できる
という効果を有する。As described above, according to the present invention, a photosensitive material is coated on the entire surface of a surface protection film of a semiconductor wafer or pellet except a bonding pad portion, and marking is performed by utilizing a photochemical reaction by light irradiation. This has an effect that the defective marking of the minute pellets can be performed easily without affecting the adjacent pellets, and the defective analysis of the defective wafers or defective pellets can be easily performed.
【図１】本発明の半導体装置の第１実施例を示し、
（ａ）はマーキング前の断面図、（ｂ）はマーキング後
の断面図である。FIG. 1 shows a first embodiment of a semiconductor device of the present invention,
(A) is sectional drawing before marking, (b) is sectional drawing after marking.
【図２】本発明の第２実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the present invention.
【図３】従来のインク・マーキング方式の半導体装置の
断面図である。FIG. 3 is a cross-sectional view of a conventional ink marking type semiconductor device.
【図４】従来の破壊によるマーキング方式の半導体装置
の断面図である。FIG. 4 is a cross-sectional view of a conventional marking-type semiconductor device by destruction.
１ 半導体ペレット ２，３ ボンディングパッド ４ 表面保護膜 ５ フォトレジスト ８ レーザ光 １０ 現像液 1 Semiconductor Pellet 2, 3 Bonding Pad 4 Surface Protective Film 5 Photoresist 8 Laser Light 10 Developer
Claims (3)
上のボンディングパッド部を除く領域に感光性材料をコ
ーティングしたことを特徴とする半導体装置。1. A semiconductor device characterized in that a region other than a bonding pad portion on a surface protection film such as a semiconductor wafer or a pellet is coated with a photosensitive material.
理後に残されるフォトレジストである請求項１の半導体
装置。2. The semiconductor device according to claim 1, wherein the photosensitive material is a photoresist in which a light-irradiated portion is left after development processing.
るフォトクロミック材料である請求項１の半導体装置。3. The semiconductor device according to claim 1, wherein the photosensitive material is a photochromic material that is discolored in a portion irradiated with light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4103633A JPH05283488A (en) | 1992-03-30 | 1992-03-30 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4103633A JPH05283488A (en) | 1992-03-30 | 1992-03-30 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05283488A true JPH05283488A (en) | 1993-10-29 |
Family
ID=14359179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4103633A Pending JPH05283488A (en) | 1992-03-30 | 1992-03-30 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05283488A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2750250A1 (en) * | 1996-06-20 | 1997-12-26 | Solaic Sa | Integrated circuit wafer protection method for vacuum processing |
| CN116364573A (en) * | 2023-05-24 | 2023-06-30 | 长鑫存储技术有限公司 | Semiconductor structure testing method and die using same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63237430A (en) * | 1987-03-25 | 1988-10-03 | Nec Yamagata Ltd | Integrated circuit device |
| JPH01218037A (en) * | 1988-02-26 | 1989-08-31 | Nec Corp | Inspection of semiconductor wafer |
| JPH0216747A (en) * | 1988-07-05 | 1990-01-19 | Yokogawa Electric Corp | Visual inspection of integrated circuit wafer |
| JPH0262060A (en) * | 1988-08-26 | 1990-03-01 | Fujitsu Ltd | Marking of integrated circuit |
| JPH02250347A (en) * | 1989-03-23 | 1990-10-08 | Matsushita Electron Corp | Inspection of semiconductor integrated circuit |
-
1992
- 1992-03-30 JP JP4103633A patent/JPH05283488A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63237430A (en) * | 1987-03-25 | 1988-10-03 | Nec Yamagata Ltd | Integrated circuit device |
| JPH01218037A (en) * | 1988-02-26 | 1989-08-31 | Nec Corp | Inspection of semiconductor wafer |
| JPH0216747A (en) * | 1988-07-05 | 1990-01-19 | Yokogawa Electric Corp | Visual inspection of integrated circuit wafer |
| JPH0262060A (en) * | 1988-08-26 | 1990-03-01 | Fujitsu Ltd | Marking of integrated circuit |
| JPH02250347A (en) * | 1989-03-23 | 1990-10-08 | Matsushita Electron Corp | Inspection of semiconductor integrated circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2750250A1 (en) * | 1996-06-20 | 1997-12-26 | Solaic Sa | Integrated circuit wafer protection method for vacuum processing |
| CN116364573A (en) * | 2023-05-24 | 2023-06-30 | 长鑫存储技术有限公司 | Semiconductor structure testing method and die using same |
| CN116364573B (en) * | 2023-05-24 | 2023-11-10 | 长鑫存储技术有限公司 | Semiconductor structure testing method and die using same |
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