JPH05251739A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPH05251739A
JPH05251739A JP4049590A JP4959092A JPH05251739A JP H05251739 A JPH05251739 A JP H05251739A JP 4049590 A JP4049590 A JP 4049590A JP 4959092 A JP4959092 A JP 4959092A JP H05251739 A JPH05251739 A JP H05251739A
Authority
JP
Japan
Prior art keywords
light emitting
layer
emitting device
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4049590A
Other languages
Japanese (ja)
Inventor
Kazumi Unno
和美 海野
Hideki Nozaki
秀樹 野崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4049590A priority Critical patent/JPH05251739A/en
Publication of JPH05251739A publication Critical patent/JPH05251739A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

PURPOSE:To achieve an LED in which the luminance of shortwave length light is 1cd or above, by using a eutectic alloy forming means for joining of LED wafers, semiconductor light emitting devices, together. CONSTITUTION:In a wafer 36 of GaAs red LED, a semiconductor light emitting device, a light emitting layer is made of an n-GaAsP epitaxial crystal growth layer 25 and a p-GaAsO epitaxial crystal growth layer 26 which are grown and laminated on an n-GaAsP epitaxial crystal growth layer 34. In a wafer 35 of Gap green LED, another semiconductor light emitting device, a light emitting layer is made of an n-GaP epitaxial crystal growth layer 29 and a p-GaAsP epitaxial crystal growth layer 30 which are formed and laminated on an n-GaP photo semiconductor epitaxial crystal growth layer 33. Then, the GaAsP red LED wafer 36 and the GaP green LED wafer 35 are forwardly joined together by the use of a eutectic alloy. The semiconductor light emitting device chip thus becomes an LED of an intermediate color between red and green.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、輝度を高く取れる構造
を有した半導体発光素子に関するもので、特に表示用光
源として、例えば、駅構内等の屋内用情報表示板、屋外
のビル広告板、道路表示板、自動車のストップランプ信
号機等に用いる目的で開発された高輝度の半導体発光素
子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device having a structure capable of obtaining high brightness, and particularly as a light source for display, for example, an indoor information display board such as in a station yard, an outdoor building advertisement board, The present invention relates to a high-brightness semiconductor light emitting device developed for use in road display boards, stop lamp traffic lights of automobiles, and the like.

【０００２】[0002]

【従来の技術】半導体結晶を用いた半導体発光素子とし
ては、発光ダイオード（ＬｉｇｈｔＥｍｉｔｔｉｎｇ
Ｄｉｏｄｅ−ＬＥＤ），レザーダイオード（Ｌａｓｅｒ
Ｄｉｏｄｅ−ＬＤ）の様に動作特性から電流で発光す
る注入型エレクトロ・ルミネッセンス（Ｅｌｅｃｔｒｏ
・Ｌｕｍｉｎｅｓｅｎｃｅ−ＥＬ）は、半導体結晶とし
てＧａＡｓ、ＧａＰ・ｐｎＪｕｎｃｔｉｏｎ（ｐｎ接
合）であり、このｐｎＪｕｎｃｔｉｏｎに順方向に電圧
を印加することにより、少数キヤリヤを注入し，キヤリ
ヤの再結合によって生ずる自然放出光を取り出す素子で
ある．その材料特有な波長の発光を得る現象であり、赤
外領域の光通信用ＬＥＤとか可視領域の表示用ＬＥＤに
大別される．又真性エレクトロルミネッセンスは結晶体
に電界を加えた時に発光する現象であり、印加電圧とし
ては直流・交流のいずれも可能で直流駆動タイプではフ
ォーミングを必要とせず、注入電流制限用高抵抗層の利
用やＧａＡｓ単結晶上に発光層を形成し、ヘテロ接合に
よるキャリヤの注入効率の改良による．これら半導体発
光素子の中でも発光ダイオード特に高輝度のＬＥＤは表
示用光源、例えば、屋内や駅構内用情報表示板と連結表
示用情報機、自動車のストップ・ランプ、信号機等に使
用されている。2. Description of the Related Art As a semiconductor light emitting device using a semiconductor crystal, a light emitting diode (Light Emitting) is used.
Diode-LED, Laser diode (Laser)
Injection-type electroluminescence (Electrode) that emits light by current due to its operating characteristics such as diode-LD)
Luminescence-EL) is a semiconductor crystal such as GaAs and GaP pn Junction (pn junction), and by applying a voltage in the forward direction to this pn Junction, a small number of carriers are injected and spontaneous emission light generated by the recombination of carriers is generated. Is the element that takes out. This is a phenomenon of obtaining light emission of a wavelength peculiar to the material, and is roughly classified into an infrared communication LED and a visible display LED. In addition, intrinsic electroluminescence is a phenomenon in which light is emitted when an electric field is applied to the crystal. Either direct current or alternating current can be applied as the applied voltage, and the DC drive type does not require forming and uses a high resistance layer for injection current limitation. By forming a light emitting layer on a GaAs single crystal or GaAs and improving the carrier injection efficiency by a heterojunction. Among these semiconductor light emitting devices, light emitting diodes, particularly LEDs with high brightness, are used for display light sources, such as information display boards for indoors and in station yard and information display for connection display, stop lamps of automobiles, traffic lights and the like.

【０００３】又、ｐｎｐＦＥＴ（Ｆｉｅｌｄ Ｅｆｆｅ
ｃｔ Ｔｒａｎｓｉｓｔｏｒ）を用いる事により低電流
でも、ある程度までは、高輝度が出せるため、従来より
も省エネルギー分野の表示用光源として用いられるＬＥ
Ｄとして、まず赤色発光素子としては、ピーク波長（λ
＝６３０ｎｍ程度）、輝度３００ｍＣｄ前後のＧａＡｓ
Ｐ赤色ＬＥＤ、ピーク波長（λ＝６６０ｎｍ程度）、輝
度５００ｍｃｄのシングルヘテロ（ＳＨ）構造ＧａＡｌ
Ａｓ 赤色ＬＥＤがあり、燈色発光素子としては、ピー
ク波長（λ＝６１０ｎｍ程度）、輝度３００ｍｃｄ前後
のＧａＡｓＰ燈色ＬＥＤ、黄色発光素子としてはピーク
波長（λ＝５９０ｎｍ程度）の輝度３００ｍｃｄのＧａ
ＡｓＰ黄色ＬＥＤが有り、緑色発光素子としてはピーク
波長（λ＝５６５ｎｍ程度）輝度５００ｍｃｄ前後Ｇａ
Ｐ緑色ＬＥＤが用いられている。Also, a pnpFET (Field Effe)
By using ct Transistor), it is possible to obtain high brightness up to a certain level even with a low current, so LE is used as a display light source in the field of energy saving more than before.
First, as the red light emitting element, the peak wavelength (λ
= About 630 nm), GaAs with a brightness of around 300 mCd
P red LED, peak wavelength (λ = about 660 nm), single hetero (SH) structure GaAl with a brightness of 500 mcd
There is an As red LED, a light emitting element has a peak wavelength (λ = 610 nm), a GaAsP LED having a brightness of about 300 mcd, and a yellow emitting element has a peak wavelength (λ = 590 nm) and a Ga having a brightness of 300 mcd.
There is an AsP yellow LED, and a green light emitting element has a peak wavelength (λ = 565 nm or so) and a brightness of around 500 mcd Ga
P green LEDs are used.

【０００４】なお、半導体発光素子を形成する主な手段
として、結晶膜形成法としては、周知のエピタキシャル
結晶膜成長法である気相結晶膜成長法（ＶＰＥ）や液相
結晶膜成長法（ＬＰＥ）が知られており、ＶＰＥはＧａ
ＡｓＰの形成に、ＬＰＥはＧａＡｌＡｓ，ＧａＰ等の形
成に適している。As a crystal film forming method as a main means for forming a semiconductor light emitting device, a vapor phase crystal film growing method (VPE) or a liquid phase crystal film growing method (LPE) which is a well-known epitaxial crystal film growing method. ) Is known and VPE is Ga
For forming AsP, LPE is suitable for forming GaAlAs, GaP and the like.

【０００５】その他の結晶膜成長法として、有機金属を
原料に用いたＶＰＥ（ＭＯＶＰＥ−ｍｅｔａｌ ｏｒａ
ｇｎｉｃ Ｖａｐｏｕｒ Ｐｈａｓｅ Ｅｐｉｔａｘ
ｙ）等の方法が知られている。As another crystal film growth method, VPE (MOVPE-metal ora) using an organic metal as a raw material is used.
gnic Vapor Phase Epitax
Methods such as y) are known.

【０００６】[0006]

【発明が解決しようとする課題】屋外用の表示用電源の
場合、各々の発光色領域において、１ｃｄ以上の輝度が
必要である。In the case of an outdoor display power source, a luminance of 1 cd or more is required in each emission color region.

【０００７】赤色領域では直接遷移型であるＧａＡｌＡ
ｓ−ＬＥＤは１ｃｄ以上の輝度が容易に得られている
が、赤色より短波長領域の橙色から緑色のＬＥＤでは間
接遷移型であるＧａＡｓＰ−ＬＥＤやＧａＰ−ＬＥＤを
使用している為、５００ｍｃｄ程度がほぼ限界とみら
れ、屋外用として十分に機能していないのが現状であ
る。したがって、屋外用に使用するＬＥＤ発色光の場
合、ＧａＡｌＡｓ赤色ＬＥＤなら１個ですむ所が、赤色
より短波長領域である燈色、黄色、緑色の場合は、従来
１個の発光素子を載置するリード上に複数個載置使用せ
ざるを得ないのでコストアップとなる。GaAlA is a direct transition type in the red region
s-LEDs can easily obtain a brightness of 1 cd or more, but since orange to green LEDs in the wavelength range shorter than red use indirect transition type GaAsP-LEDs or GaP-LEDs, about 500 mcd Is considered to be almost the limit, and is currently not functioning sufficiently for outdoor use. Therefore, in the case of LED colored light used outdoors, only one GaAlAs red LED is required, but if it is light-colored, yellow, or green, which has a shorter wavelength range than red, one light-emitting element is conventionally mounted. Since there is no choice but to mount and use a plurality of them on the lead, the cost increases.

【０００８】また、直接遷移型であるＩｎＧａＡｌＰ−
ＬＥＤにおいても、十分な輝度が得られない。Further, InGaAlP- which is a direct transition type
Even with LEDs, sufficient brightness cannot be obtained.

【０００９】この原因の一つに発光した活性層と光半導
体結晶基板との間の光を有効に活用していないことが挙
げられる。また、輝度を向上させる方法として、光反射
層及び電流拡散層を形成する事によって、発光効率を上
げることは出来るが、まだ橙色から緑色までの範囲の光
を１ｃｄ以上のＬＥＤとして十分生かすことができない
のが現状である。One of the causes is that light emitted between the active layer and the optical semiconductor crystal substrate is not effectively utilized. Further, as a method of improving the brightness, it is possible to increase the luminous efficiency by forming a light reflection layer and a current diffusion layer, but it is still possible to sufficiently utilize the light in the range from orange to green as an LED of 1 cd or more. The current situation is that it cannot be done.

【００１０】又、発光層における活性層として、バンド
・ギャップの大きいＩｎＧａＡｌＰ系半導体結晶を用い
た半導体発光素子を使用すると、光半導体結晶基板がハ
ンド・ギャップの小さいＧａＡｓ等の材料の場合、発光
層は短波長の発光をするので発せられる光の多くは、こ
の光半導体結晶基板に吸収されてしまうのが現状であ
る。When a semiconductor light emitting device using an InGaAlP semiconductor crystal having a large band gap is used as an active layer in the light emitting layer, when the optical semiconductor crystal substrate is a material such as GaAs having a small hand gap, the light emitting layer is used. At present, most of the emitted light is absorbed by the optical semiconductor crystal substrate because it emits light with a short wavelength.

【００１１】したがって、発光により下方に向った光
は、外部に取り出し得ずじまいになってしまう。そこで
光半導体結晶基板を除去する提案は良いが、光半導体エ
ピタキシャル結晶成長層が薄いために、該光半導体結晶
基板を除去する方法もむずかしい。Therefore, the light emitted downward due to the light emission cannot be taken out to the outside, which is a problem. Therefore, a proposal to remove the optical semiconductor crystal substrate is good, but a method for removing the optical semiconductor crystal substrate is difficult because the optical semiconductor epitaxial crystal growth layer is thin.

【００１２】したがって、該光半導体結晶基板にその発
光波長光の吸収の少ないものを選択せねばならず、光半
導体結晶材料が限定されている状況である。Therefore, it is necessary to select the optical semiconductor crystal substrate that absorbs less light of the emission wavelength, and the optical semiconductor crystal material is limited.

【００１３】そこで従来例図２では、光半導体結晶基板
による光の吸収を防いで発光効率を上げると同時に光半
導体結晶基板材料の選択の範囲を広げるために、発光層
と光半導体結晶基板の間に化合物半導体材料からなる光
反射層を形成し、発光層から出た光は下方の光半導体結
晶基板１の方向に向かっても光反射層によって反射され
て光半導体結晶基板による光の吸収が防がれる。Therefore, in FIG. 2 of the conventional example, in order to prevent the absorption of light by the optical semiconductor crystal substrate to improve the light emission efficiency and at the same time to expand the range of selection of the optical semiconductor crystal substrate material, the light emitting layer and the optical semiconductor crystal substrate are separated. A light-reflecting layer made of a compound semiconductor material is formed on the light-emitting layer, and the light emitted from the light-emitting layer is reflected by the light-reflecting layer toward the lower optical semiconductor crystal substrate 1 to prevent light absorption by the optical semiconductor crystal substrate. Get off.

【００１４】しかし、前記光反射層はそれ自体の光吸収
及び反射率が５０〜６０％と低いため十分な効果が得ら
れない。However, since the light reflection layer itself has a low light absorption and reflectance of 50 to 60%, a sufficient effect cannot be obtained.

【００１５】一方、反射層を設けずに発光層から発光し
た光が下方に向っても光を外部に取り出す方法として、
その発光波長光に対し不透明であるＧａＡｓ光半導体結
晶基板の代りにその発光波長光に対し透明であるＧａＰ
光半導体結晶基板を用いたＩｎ1-v Ｇａv Ｐ組成勾配層
又はＩｎ1-v （Ｇａ1-w Ａｌw ）v Ｐの組成勾配層を有
するＩｎ0.5 （Ｇａ1-x Ａｌx ）0.5 ＰーＬＥＤ（緑色
→赤色発光）が出来た。しかし、この場合は、ＧａＰ光
半導体結晶基板とＩｎ0.5 （Ｇａ1-x Ａｌx ）0.5 Ｐと
の格子不整合による格子欠陥が多発する為、内部発光効
率が低下し、結果的には輝度の高い１ｃｄ以上のＬＥＤ
が得られなかった。On the other hand, as a method of extracting the light to the outside even if the light emitted from the light emitting layer goes downward without providing the reflecting layer,
Instead of a GaAs optical semiconductor crystal substrate that is opaque to the emitted wavelength light, GaP that is transparent to the emitted wavelength light
In 0.5 (Ga 1-x Al x ) 0.5 P having an In 1-v Ga v P composition gradient layer or an In 1-v (Ga 1-w Al w ) v P composition gradient layer using an optical semiconductor crystal substrate -LED (green → red emission) was made. However, in this case, lattice defects due to lattice mismatch between the GaP optical semiconductor crystal substrate and In 0.5 (Ga 1-x Al x ) 0.5 P occur frequently, resulting in a decrease in internal light emission efficiency, resulting in a decrease in luminance. LED of high 1 cd or more
Was not obtained.

【００１６】従来例図１，図２，図３に示したＰ−Ｇａ
1-u Ａｌu Ａｓ電流拡散層３において、ｕが０．７の場
合を示したもので、この電流拡散層の存在によって活性
層全域で発光させることが出来るのであるが、その発光
輝度を十分生かすことが出来ない。Conventional example P-Ga shown in FIGS. 1, 2 and 3
In the 1-u Al u As current diffusion layer 3, the case where u is 0.7 is shown. It is possible to emit light in the entire active layer due to the presence of this current diffusion layer. I can't make use of it.

【００１７】そこで発光効率を上げて光の有効利用が可
能となる短波長の光を発する半導体発光素子ＩｎＧａＡ
ｌＰの四元素混晶材料で構成される活性層から得られる
輝度が１ｃｄ以上になるＬＥＤを提供する事を目的とし
ている。Therefore, a semiconductor light emitting device InGaA that emits light of a short wavelength that can increase the luminous efficiency and effectively use the light can be obtained.
It is an object of the present invention to provide an LED having a brightness of 1 cd or more obtained from an active layer composed of a four-element mixed crystal material of IP.

【００１８】[0018]

【課題を解決するための手段】前記課題を解決し目的を
達成するため、第一の発明の半導体発光デバイスは光半
導体結晶基板上に少なくとも一つ以上の発光層で構成さ
れた半導体発光素子同志若しくは光半導体結晶基板上に
少なくとも一つ以上の発光層で構成された半導体発光素
子と光半導体結晶基板とを金属によって接合して成るこ
とを特徴とする。In order to solve the above problems and achieve the object, a semiconductor light emitting device according to the first invention is a semiconductor light emitting device composed of at least one light emitting layer on an optical semiconductor crystal substrate. Alternatively, it is characterized in that a semiconductor light emitting element composed of at least one light emitting layer and an optical semiconductor crystal substrate are bonded on the optical semiconductor crystal substrate with a metal.

【００１９】第二の発明の半導体発光デバイスは、少な
くとも一つ以上の発光層と光半導体厚膜エピタキシヤル
結晶成長層とで構成された半導体発光素子同志若しくは
少なくとも一つ以上の発光層と光半導体厚膜エピタキシ
ヤル結晶成長層とで構成された半導体発光素子と光半導
体結晶基板とを金属によって接合して成ることを特徴と
する。The semiconductor light emitting device of the second invention is a semiconductor light emitting device composed of at least one or more light emitting layers and an optical semiconductor thick film epitaxial crystal growth layer, or at least one or more light emitting layers and optical semiconductors. It is characterized in that a semiconductor light emitting device composed of a thick film epitaxial crystal growth layer and an optical semiconductor crystal substrate are bonded by a metal.

【００２０】第三の発明の半導体発光デバイスは、請求
項１並びに請求項２に記載の半導体発光デバイスにおい
て、半導体発光素子の光半導体エピタキシャル結晶成長
層同志若しくは前記半導体発光素子の光半導体エピタキ
シャル結晶成長層と光半導体結晶基板の接合に用いた金
属が共晶合金であることを特徴とする半導体発光デバイ
ス。A semiconductor light-emitting device according to a third aspect of the present invention is the semiconductor light-emitting device according to claim 1 or 2, wherein the semiconductor light-emitting device comprises optical semiconductor epitaxial crystal growth layers or the semiconductor light-emitting device includes optical semiconductor epitaxial crystal growth layers. A semiconductor light-emitting device, wherein the metal used for joining the layer and the optical semiconductor crystal substrate is a eutectic alloy.

【００２１】第四の発明の半導体発光デバイスは、請求
項１並びに請求項２に記載の半導体発光デバイスにおい
て、光半導体結晶基板若しくは光半導体エピタキシャル
結晶成長層が発光層により発する光のエネルギーよりも
大きなバンドギャップを有する光半導体結晶であること
を特徴とする。A semiconductor light emitting device according to a fourth aspect of the present invention is the semiconductor light emitting device according to any one of claims 1 and 2, wherein the energy of light emitted from the light emitting layer of the photosemiconductor crystal substrate or the photosemiconductor epitaxial crystal growth layer is larger than the energy of light. It is characterized by being an optical semiconductor crystal having a band gap.

【００２２】第五の発明の半導体発光デバイスは、請求
項１並びに請求項２に記載の半導体発光デバイスにおい
て、少なくとも一つ以上の発光層で構成された半導体発
光素子を少なくとも二つ以上順方向に接合し、且つ該半
導体発光素子に順バイアスをそれぞれ印加して各発光層
から各々の発光輝度を制御可能にしたことを特徴とする
半導体発光デバイス。A semiconductor light emitting device according to a fifth aspect of the present invention is the semiconductor light emitting device according to any one of claims 1 and 2, wherein at least two or more semiconductor light emitting elements each having at least one light emitting layer are formed in a forward direction. A semiconductor light emitting device characterized by being joined together and applying a forward bias to each of the semiconductor light emitting elements so that the light emission luminance of each light emitting layer can be controlled.

【００２３】第六の発明の半導体発光デバイスは、請求
項１並びに請求項２に記載の半導体発光デバイスにおい
て、少なくとも一つ以上の発光層で構成された半導体発
光素子を少なくとも二つ以上順方向に接合し、且つ該半
導体発光素子に順バイアスをそれぞれ印加して、各々の
発光層からの発光を任意に制御し半導体発光デバイスの
チップ１個で緑と赤若しくは赤と青又は緑と青の中間色
の発光を任意に制御可能にしたことを特徴とする。A semiconductor light emitting device according to a sixth aspect of the present invention is the semiconductor light emitting device according to any one of claims 1 and 2, wherein at least two or more semiconductor light emitting elements each having at least one light emitting layer are formed in a forward direction. By bonding and applying a forward bias to each of the semiconductor light-emitting elements, light emission from each light-emitting layer is arbitrarily controlled, and one chip of the semiconductor light-emitting device is used for green and red or red and blue or an intermediate color between green and blue. It is characterized in that the emission of light can be controlled arbitrarily.

【００２４】第七の発明の半導体発光デバイスは、請求
項１並びに請求項２に記載の半導体発光デバイスにおい
て、半導体発光素子の光半導体エピタキシャル結晶成長
層上に形成したオーミック電極と光半導体結晶基板上に
形成したオーミック電極共晶合金化構築物とを所定の形
に同形形状化させ且つ、熱処理によって融着させ、該オ
ーミック電極同志を金属間結合により共晶合金接合させ
たことを特徴とする半導体発光デバイス。A semiconductor light emitting device according to a seventh invention is the semiconductor light emitting device according to claim 1 or 2, wherein the ohmic electrode formed on the optical semiconductor epitaxial crystal growth layer of the semiconductor light emitting element and the optical semiconductor crystal substrate. The semiconductor light-emitting device characterized in that the ohmic electrode eutectic alloying structure formed in 1) is homomorphic to a predetermined shape and is fused by heat treatment, and the ohmic electrodes are eutectic alloy bonded by intermetallic bonding. device.

【００２５】第八の発明の半導体発光デバイスは、請求
項１並びに請求項２に記載の半導体発光デバイスにおい
て、半導体発光素子の光半導体エピタキシャル結晶成長
層上に所定の形に形状化したオーミック電極形成面上全
面に金属若しくは合金反射層を形成し、光半導体結晶基
板上に形成したオーミック電極上を共晶合金化した構築
物が特定の形状を有する必要がなく、且つ前記オーミッ
ク電極形成面上全面に施された金属若しくは合金反射層
がＡｕ及びＡｌ及びＡｇ又は反射率の高い金属並びに合
金であることを特徴とする。The semiconductor light emitting device of the eighth invention is the semiconductor light emitting device according to claim 1 or 2, wherein the ohmic electrode formed into a predetermined shape is formed on the optical semiconductor epitaxial crystal growth layer of the semiconductor light emitting device. A metal or alloy reflective layer is formed on the entire surface, and it is not necessary for the structure obtained by eutectic alloying the ohmic electrode formed on the optical semiconductor crystal substrate to have a specific shape, and on the entire surface on which the ohmic electrode is formed. It is characterized in that the applied metal or alloy reflection layer is Au and Al and Ag or a metal and alloy having high reflectance.

【００２６】[0026]

【作用】発光層を構成する半導体発光素子・ＬＥＤウェ
ーハーと、前記発光層から発せられる光のエネルギー以
上のエネルギーギャップをもつ透明な光半導体結晶基板
若しくは不透明な光半導体結晶基板上に光半導体エピタ
キシャル結晶成長層を形成した後、光吸収層となる光半
導体結晶基板を除去することにより光を有効に取り出す
ことができ、赤色より短波長領域である中間色例えば橙
色，黄色，緑色発光で１ｃｄ以上の輝度が容易に得られ
る。又半導体発光素子・ＬＥＤウェーハー同志の接合に
は共晶合金化手段を用いて電極形状に拘らず、効果的に
容易に接合できる。The semiconductor light emitting device / LED wafer forming the light emitting layer, and the optical semiconductor epitaxial crystal on the transparent optical semiconductor crystal substrate or the opaque optical semiconductor crystal substrate having an energy gap larger than the energy of light emitted from the light emitting layer. After the growth layer is formed, light can be effectively extracted by removing the optical semiconductor crystal substrate that serves as the light absorption layer, and the intermediate color that is in the shorter wavelength region than red, for example, orange, yellow, and green emission, has a brightness of 1 cd or more. Is easily obtained. Further, eutectic alloying means is used for joining the semiconductor light emitting device and the LED wafer to each other effectively and easily regardless of the electrode shape.

【００２７】[0027]

【実施例】図１，図２，図３に示した従来技術による半
導体発光素子の構造断面図の一例を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of a structural cross-sectional view of a semiconductor light emitting device according to the prior art shown in FIGS. 1, 2 and 3 will be described.

【００２８】光半導体結晶基板１は不純物をドーピング
した濃度が３×１０18cm-3程度のｎ−ＧａＡｓ光半導体
結晶基板を用い、このｎ−ＧａＡｓ光半導体結晶基板上
にＭＯＶＰＥ法で厚さ１μｍで不純物をドーピングした
濃度５×１０17cm-3のｎ−Ｉｎ0.5 （Ｇａ1-x Ａｌx ）
0.5 Ｐクラッド層２１を成長させ、次に厚さ０．６μｍ
のアンドープＩｎ0.5 （Ｇａ1-y ＡＩy ）0.5 Ｐ活性層
２０を形成し、さらに厚さ１μｍ不純物をドーピングし
た濃度５×１０17cm-3のＰ−Ｉｎ0.5 （Ｇａ1- z Ａ
ｌｚ）0.5 Ｐクラッド層２２を形成し、さらに厚さ７μ
ｍ程度の不純物ドーピング濃度１×１０18cm-3のＰ型Ｇ
ａ1-u Ａｌu Ａｓ電流拡散層３を順次ＭＯＶＰＥ法で成
長させ、次にｎ型ＧａＡｓ光半導体結晶基板１の他の表
面には、Ａｕ−Ｇｅ等のｎ側電極とをオーミックコンタ
クトさせ、反対側の電流拡散層３上にはＡｕ−Ｚｎ等の
Ｐ側電極５をオーミックコンタクトさせた従来の技術で
は、電流拡散層３であるＧａ1-u Ａｌu Ａｓ層はＰ側電
極５からの電流で半導体発光素子・ＬＥＤチップ全面に
拡散させるために設けられたものであり、半導体発光素
子として、必ずしも必要でなく、これを用いないものも
ある。As the optical semiconductor crystal substrate 1, an n-GaAs optical semiconductor crystal substrate having an impurity concentration of about 3 × 10 18 cm -3 is used, and a thickness of 1 μm is formed on the n-GaAs optical semiconductor crystal substrate by MOVPE method. N-In 0.5 (Ga 1-x Al x ) with a concentration of 5 × 10 17 cm -3 doped with impurities
0.5 P clad layer 21 is grown, and then the thickness is 0.6 μm.
Undoped In 0.5 (Ga 1-y AI y ) 0.5 P active layer 20 is formed and further doped with an impurity of 1 μm in thickness to obtain a concentration of 5 × 10 17 cm -3 of P-In 0.5 (Ga 1- z A
1 z ) 0.5 P clad layer 22 is formed, and the thickness is 7 μm.
P-type G with an impurity doping concentration of about 1 × 10 18 cm -3
The a 1-u Al u As current diffusion layer 3 is sequentially grown by the MOVPE method, and then another surface of the n-type GaAs optical semiconductor crystal substrate 1 is ohmic-contacted with an n-side electrode such as Au—Ge. In the conventional technique in which the P-side electrode 5 made of Au—Zn or the like is ohmic-contacted on the current diffusion layer 3 on the opposite side, the Ga 1-u Al u As layer, which is the current diffusion layer 3, is formed from the P-side electrode 5. It is provided for diffusing the entire surface of the semiconductor light emitting element / LED chip with an electric current, and is not always necessary as a semiconductor light emitting element, and there are some which do not use it.

【００２９】図２に示した従来方法として光半導体結晶
基板による光の吸収を防いで発光効率を上げると同時に
光半導体結晶基板材料の選択の範囲を広げるために発光
層と半導体基板の間に光反射層を形成したものや、図３
に示した従来方法ではあるが、基板ＧａＡｓの代りにＧ
ａＰを基板にしその上に形成した層であるＩｎＧａＡｌ
Ｐ−ＬＥＤ・半導体発光素子の発光色（緑色−赤色）に
対して不透明なＧａＡｓ光半導体結晶基板と異なりＧａ
Ｐ光半導体結晶基板は透明であるため、反射層を設けな
くとも、下方に向った光を外部に取り出しえる方法もあ
る。As a conventional method shown in FIG. 2, in order to prevent the absorption of light by the optical semiconductor crystal substrate to improve the light emission efficiency, and at the same time to expand the range of selection of the optical semiconductor crystal substrate material, the light is emitted between the light emitting layer and the semiconductor substrate. One with a reflective layer,
Although it is the conventional method shown in FIG.
InGaAl which is a layer formed on aP as a substrate
Ga, unlike the GaAs optical semiconductor crystal substrate, which is opaque to the emission color (green-red) of the P-LED / semiconductor light-emitting element
Since the P-optical semiconductor crystal substrate is transparent, there is also a method of extracting downward light to the outside without providing a reflective layer.

【００３０】電流拡散層の元素構成において、図１の例
として、図ではｕが０．７の場合を示した。In the elemental constitution of the current diffusion layer, the case where u is 0.7 is shown in the figure as an example of FIG.

【００３１】この層の存在によって、活性層全域で発光
させることが可能になるので、チップからの光取り出し
効率を例えばＧａ1-u Ａｌu Ａｓ層としての電流拡散層
の存在によって効率良く発光することができるが、その
光を十分生かすことができない現状であったため、大幅
に改善する余地がある。これらの各種成長層はＧａＡｓ
光半導体結晶基板と格子整合が取られている事及びダブ
ルヘテロ構造であること、活性層のｙを０〜０．７まで
変化させると約６６０ｎｍの赤色発光から約５４０ｎｍ
の緑色発光の範囲を直接遷移型バンド構造が得られるこ
と、およびダブルヘテロ構造を用いることなどにより高
い発光効率が得られ、更に光反射層を形成した方法を取
る事により、発光層２から出た光は下方の光半導体結晶
基板１の方向に向っても、該光反射層によって反射され
て光半導体結晶基板による光の吸収は防げた。Due to the presence of this layer, it is possible to emit light in the entire active layer, so that the light extraction efficiency from the chip is efficiently emitted due to the presence of a current diffusion layer as a Ga 1 -u Al u As layer. However, there is room for significant improvement because the light could not be fully utilized. These various growth layers are GaAs
Lattice matching with the photo-semiconductor crystal substrate and double hetero structure, and when y of the active layer is changed from 0 to 0.7, red emission of about 660 nm to about 540 nm
In the green emission range, a high emission efficiency can be obtained by directly obtaining a transition band structure and by using a double hetero structure. Further, by adopting a method in which a light reflecting layer is formed, the emission from the light emitting layer 2 is increased. Even when the light was directed toward the optical semiconductor crystal substrate 1 below, the light was reflected by the light reflecting layer and the absorption of light by the optical semiconductor crystal substrate was prevented.

【００３２】又この光反射層の構成は発光層の直下に屈
折率の異なる二種類以上の物質を光の波長の１／４倍相
当もしくはこれに比例した相当の厚さに交互に積層して
形成したものである。The structure of this light reflecting layer is such that two or more kinds of substances having different refractive indexes are alternately laminated right below the light emitting layer to a thickness equivalent to 1/4 times the wavelength of light or a thickness proportional thereto. It was formed.

【００３３】又、一方反射層を設けず下方に向った光を
外部に取り出す方法が可能であり、ＧａＡｓ光半導体結
晶基板の代りにＧａＰ光半導体結晶基板を使用したＩｎ
ＧａＡｌＰ−ＬＥＤ・半導体発光素子を例とし、その機
構はＧａＰ光半導体結晶基板がＩｎＧａＡｌＰ−ＬＥＤ
・半導体発光素子の発光色（緑色−赤色）に対して透明
なため反射層を設ける必要はないという理由であり、反
対側の下方へ向った光はｎ側電極側の面で反射され、上
方に光取出し側表面から外方へ出て、ｎー組成勾配層８
下方に向った光も有効に外部に取り出す。On the other hand, it is possible to take out the downward light to the outside without providing a reflection layer, and In using a GaP optical semiconductor crystal substrate instead of the GaAs optical semiconductor crystal substrate.
Taking GaAlP-LED / semiconductor light-emitting device as an example, the mechanism is that the GaP optical semiconductor crystal substrate is InGaAlP-LED.
The reason is that it is not necessary to provide a reflective layer because it is transparent to the emission color (green-red) of the semiconductor light emitting element, and the light directed downward on the opposite side is reflected by the surface on the n-side electrode side, To the outside from the surface on the light extraction side, and the n-composition gradient layer 8
The light directed downward is also effectively extracted to the outside.

【００３４】又、ｐｎ接合がダブルヘテロ構造は言うま
でもなく、又、シングルヘテロやホモ接合等の他の構造
の素子の場合でも発光に直接寄与する部分を発光層２と
ここでは定義し、Ｇａ1-u Ａｌu Ａｓの電流拡散層３は
Ｐ側電極からの電流を半導体発光素子・ＬＥＤチップ全
面に拡散させるためのもので発光素子としては必ずしも
必要でない。Not to mention that the pn junction has a double hetero structure, and even in the case of an element having another structure such as a single hetero or homo junction, the portion directly contributing to light emission is defined as the light emitting layer 2 here, and Ga 1 -u Al u as current diffusion layer 3 is not necessarily required as a light emitting element intended for diffusing current from P-side electrode in the semiconductor light emitting element · LED chips entirely.

【００３５】又、輝度を高く取るためには、発光層の光
の発光機構が発光に直接寄与する部分は、活性層２０と
この活性層を挟む一対のクラット層２１，２２であるの
で、ｐｎ接合がダブルヘテロ構造では電流拡散層３側か
ら光が取り出されるのでＰ側電極５が光を取り出す側の
電極となり、光取出し側電極は通常ボンディングパッド
によって外部配線と接続されている。Further, in order to obtain high brightness, the portion of the light emitting layer where the light emitting mechanism directly contributes to light emission is the active layer 20 and the pair of clat layers 21 and 22 sandwiching the active layer. When the junction is a double hetero structure, light is extracted from the side of the current diffusion layer 3, so the P-side electrode 5 serves as an electrode on the side of extracting light, and the light-extraction side electrode is usually connected to an external wiring by a bonding pad.

【００３６】内分けはＧａ1-u Ａｌu Ａｓ電流拡散層３
を設けることにより、Ｐ側電極からの電流を半導体発光
素子・ＬＥＤチップ全面に拡散させるためのものでＰ側
電極から光を取り出す事になる。The internal division is Ga 1 -u Al u As current diffusion layer 3
By providing the element, the current from the P-side electrode is diffused over the entire surface of the semiconductor light emitting element / LED chip, and light is extracted from the P-side electrode.

【００３７】そこで図４，図５は本発明図で、電流拡散
層３側から光が取り出されるには、Ｐ側電極が光取り出
し側電極となる。Therefore, FIGS. 4 and 5 are diagrams of the present invention. In order to extract light from the side of the current diffusion layer 3, the P-side electrode serves as a light-extraction-side electrode.

【００３８】光取り出し側電極は、通常ボンディングパ
ッドによって外部配線と接続されている。The light extraction side electrode is usually connected to an external wiring by a bonding pad.

【００３９】なお、この種の発光素子において、発光に
直接寄与する部分は活性層２０と、この活性層を挟む１
対のクラッド層２１，２２であるので、ここではこれら
の層をまとめて発光層と定義する。この半導体発光素子
の発光層であるｐｎ接合部がダブルヘテロ構造である
が、シングルヘテロ接合やホモ接合などの他の構造の半
導体発光素子の場合でも発光に直接寄与するものは発光
層と称する。In this type of light emitting device, the portion that directly contributes to light emission is the active layer 20 and the portion sandwiching this active layer 1
Since these are the pair of cladding layers 21 and 22, these layers are collectively defined as a light emitting layer here. Although the pn junction portion which is the light emitting layer of this semiconductor light emitting element has a double hetero structure, even in the case of a semiconductor light emitting element having another structure such as a single hetero junction or a homo junction, one that directly contributes to light emission is called a light emitting layer.

【００４０】電流拡散層としては、Ｇａ1-u Ａｌu Ａｓ
層が良く知られている材料である。一方、反射層を設け
ずに下方に向った光を外部に取り出す方法としては、例
えば光に不透明なＧａＡｓ光半導体結晶基板の代りに光
に透明なＧａＰ光半導体結晶基板を使用したＩｎＧａＡ
ｌＰ−ＬＥＤ・半導体発光素子がある。ＧａＰ光半導体
結晶基板はＩｎＧａＡｌＰ−ＬＥＤ・半導体発光素子の
発光色（緑色〜赤色）に対して透明なため反射層を設け
る必要はない。As the current spreading layer, Ga 1-u Al u As
Layers are well known materials. On the other hand, as a method for extracting downward light to the outside without providing a reflective layer, for example, InGaA using a transparent GaP optical semiconductor crystal substrate instead of the opaque GaAs optical semiconductor crystal substrate is used.
There are 1P-LEDs and semiconductor light emitting devices. Since the GaP optical semiconductor crystal substrate is transparent to the emission color (green to red) of the InGaAlP-LED / semiconductor light emitting element, it is not necessary to provide a reflective layer.

【００４１】図４，図５は、ｙが１〜０．５の範囲であ
る場合を示した。この層の存在によって活性層で発光さ
せることが可能となるので半導体発光素子・チップから
の光取出し効率を電流拡散層の存在によって効率良く発
光することができるが、その光を十分に生かすことがで
きない。発光層２からの発光は一部はそのまま光取り出
し側の裏面から外部へ出、一方半導体基板が透明な場
合、反対側の下方へ向った光は、ｎ側電極側の面で反射
され、上方の光取り出し側表面から外部へ出て下方に向
った光も有効に取り出すことができる。4 and 5 show the case where y is in the range of 1 to 0.5. The presence of this layer enables the active layer to emit light, and therefore the light extraction efficiency from the semiconductor light emitting device / chip can be efficiently emitted due to the presence of the current diffusion layer, but the light can be fully utilized. Can not. A part of the light emitted from the light emitting layer 2 goes out from the back surface on the light extraction side as it is, while when the semiconductor substrate is transparent, the light directed downward on the opposite side is reflected by the surface on the n side electrode side, It is possible to effectively extract the light that has gone out from the surface of the light extraction side of the and is directed downward.

【００４２】またこれら課題を解決するための対策とし
てＩｎ0.5 （Ｇａ1-x Ａｌx ）0.5 Ｐ・グラッド層を成
長させる前に先ず、ＧａＰ光半導体結晶基板上にＩｎ
1-v Ｇａv Ｐ組成勾配層（ｖ＝１→０．５）を成長させ
ることによりＧａＰ光半導体結晶基板とＩｎ0.5 （Ｇａ
1-x Ａｌx ）0.5 Ｐ・グラッド層との間の格子定数の違
いを吸収させる方法がとられている。As a measure for solving these problems, before growing an In 0.5 (Ga 1-x Al x ) 0.5 P.grad layer, first, In is deposited on a GaP optical semiconductor crystal substrate.
By growing a 1-v Ga v P composition gradient layer (v = 1 → 0.5), a GaP optical semiconductor crystal substrate and In 0.5 (Ga
A method of absorbing a difference in lattice constant between the 1-x Al x ) 0.5 P-grad layer and the lattice constant is adopted.

【００４３】ｎーＧａＰ光半導体結晶基板・ｎー厚膜層
１０側にオーミック電極１１（水玉電極）を、更にｎー
ＧａＰ光半導体結晶基板１４側上にオーミック電極１３
（水玉電極）を設け、熱融合で（ＧａＰ）緑色ＬＥＤウ
ェーハーである光半導体発光素子とｎーＧａＰ光半導体
結晶基板１４とを共晶金属接合させて半導体発光デバイ
スを構成する。又、Ｉｎ 1-vＧａv Ｐ組成勾配の代りに
Ｉｎ 1−v （Ｇａ1-wＡｌw ）v ・Ｐ組成勾配層（ｖ＝
１→０．５）としても良い。An ohmic electrode 11 (polka dot electrode) is provided on the n-GaP optical semiconductor crystal substrate / n-thick film layer 10 side, and an ohmic electrode 13 is further provided on the n-GaP optical semiconductor crystal substrate 14 side.
A (polka dot electrode) is provided, and the semiconductor light emitting device is formed by thermally fusing the optical semiconductor light emitting element, which is a (GaP) green LED wafer, and the n-GaP optical semiconductor crystal substrate 14 by eutectic metal bonding. Further, instead of the In 1-v Ga v P composition gradient, an In 1-v (Ga 1-w Al w ) v · P composition gradient layer (v =
1 → 0.5).

【００４４】次に本発明の実施例１を図面を参照して説
明する。図４は本発明の実施例１に係る半導体発光素子
である発光ダイオードの概略構造を示す断面図である。
図４に示すように基本的構造は一方の電極を有する化合
物半導体結晶１４と、この結晶の他方の面上にオーミッ
ク電極１３、更にそのオーミック電極１３の上の共晶合
金１２及び発光層２の両側に電流拡散層３、厚膜層１０
を有する光半導体ウェーバ１５の厚膜層１０側にオーミ
ック電極１１と電流拡散層側３にオーミック電極５が存
在し、前記化合物半導体結晶１４と光半導体結晶１５と
が前記共晶合金によって機械的にも電気的にも結合され
ている。結合側のオーミック電極１１と１３は電気的特
性に問題がなく、また結合後の機械的強度に問題がない
限り、電極の面積は小さい方が光の吸収が小さいので光
取出しの効率が良い。また前記半導体結晶１４は光の吸
収を極力少なくするためそのバンドギャップの大きさは
光のエネルギーよりも大きいものとし、もう一方の電極
９も電気的特性に問題がない限り電極面積は小さい方が
良い。図４の例では電極５がワイヤボンディングするた
めの電極パッドである。Next, a first embodiment of the present invention will be described with reference to the drawings. FIG. 4 is a sectional view showing a schematic structure of a light emitting diode which is a semiconductor light emitting element according to the first embodiment of the present invention.
As shown in FIG. 4, the basic structure includes a compound semiconductor crystal 14 having one electrode, an ohmic electrode 13 on the other surface of the crystal, and a eutectic alloy 12 and a light emitting layer 2 on the ohmic electrode 13. Current spreading layer 3 and thick film layer 10 on both sides
An ohmic electrode 11 on the side of the thick film layer 10 and an ohmic electrode 5 on the side of the current diffusion layer 3 of the optical semiconductor web 15 having the compound semiconductor crystal 14 and the optical semiconductor crystal 15 mechanically formed by the eutectic alloy. Are also electrically coupled. The ohmic electrodes 11 and 13 on the coupling side have no problem in electrical characteristics, and unless there is a problem in mechanical strength after coupling, the smaller the area of the electrode, the smaller the light absorption and the better the light extraction efficiency. The semiconductor crystal 14 has a band gap larger than the energy of light in order to reduce light absorption as much as possible, and the other electrode 9 has a smaller electrode area unless there is a problem in electrical characteristics. good. In the example of FIG. 4, the electrode 5 is an electrode pad for wire bonding.

【００４５】次に上記半導体発光素子の製造方法につい
て具体的に説明する。Next, a method for manufacturing the above semiconductor light emitting device will be specifically described.

【００４６】各半導体層は有機金属気相成長法（ＭＯＶ
ＰＥ法）により成長させた。Each semiconductor layer is formed by metalorganic vapor phase epitaxy (MOV).
It was grown by PE method).

【００４７】原料にはトリメチルインジウム（ＴＭ
Ｉ）、トリメチルガリウム（ＴＭＧ）、トリメチルアル
ミニウム（ＴＭＡ）をIII 族元素のソースとして、アル
シン（ＡｓＨ3 ）とフォスフィン（ＰＨ3 ）をＶ族元素
のソースとして用いた。Trimethyl indium (TM) is used as a raw material.
I), trimethylgallium (TMG) and trimethylaluminum (TMA) were used as the source of the group III element, and arsine (AsH 3 ) and phosphine (PH 3 ) were used as the source of the group V element.

【００４８】またＰ型ドーパントとしてＺn 、ｎ型ドー
パントとしてＳｉを用いたが、これらはそれぞれジメチ
ル亜鉛（ＤＭＺ）、シラン（ＳｉＨ4 ）をソースとして
ドープした。Zn was used as the P-type dopant and Si was used as the n-type dopant, and these were doped with dimethylzinc (DMZ) and silane (SiH 4 ) as sources.

【００４９】これらの反応性ガスを水素をキャリアガス
として石英製反応管に輸送して、ＳｉＣコーティングし
たグラファイトサセプタ上に設置したｐ−ＧａＡｓ光半
導体結晶基板にエピタキシャル結晶成長をさせた。These reactive gases were transported to a quartz reaction tube using hydrogen as a carrier gas, and epitaxial crystal growth was performed on a p-GaAs optical semiconductor crystal substrate placed on a SiC-coated graphite susceptor.

【００５０】反応管内部の圧力は３０〜１００Torrであ
り、基板は８００℃程度に加熱される。The pressure inside the reaction tube is 30 to 100 Torr, and the substrate is heated to about 800.degree.

【００５１】ｐ−ＧａＡｓ基板にはＺｎをドープした、
キャリア濃度が１×１０19cm-3程度のものを用いた。基
板の面方位は（１００）である。初めにｐ−ＧａＡｓ基
板の上にｐ−ＧａＡｓ（Ｚｎドープ、３×１０18cm-3）
バッファ層を０．５μｍ程度成長させる。この上に順次
ｐ−Ｉｎ0.5 Ｇａ0.2 Ａｌ0.3 Ｐ保護膜層（Ｚｎドー
プ、５×１０17cm-3）を０．１５μｍ、ｐ−ＧａＡｓコ
ンタクト層（Ｚｎドープ、３×１０18cm-3）を０．１μ
ｍ，ｐ−Ｇａ0.2 Ａｌ0.8 Ａｓ電流拡散層（Ｚｎドープ
４×１０18cm-3）３を７μｍ程度、ｐ−Ｉｎ0.5 Ａｌ
0.5 Ｐ）、クラッド層（Ｚｎドープ、５×１０17cm-3）
２２を１μｍ程度、アンドープＩｎ0.5 Ｇａ0.21Ａｌ
0.29Ｐ活性層２０を０．６μｍ程度、ｎ−Ｉｎ0.5 Ａｌ
0.5 Ｐクラッド層（Ｓｉドープ、５×１０17cm-3）を１
μｍ程、ｎ−Ｇａ0.2 Ａｌ0.8 Ａｓ厚膜層（Ｓｉドー
プ、４×１０18cm-3）を７μ程度、ｎ−ＧａＡｓコンタ
クト層（Ｓｉドープ ４×１０18cm-3）を０．１μｍ成
長させ、最後にｎ−Ｉｎ0.5 Ｇａ0.2 Ａｌ0.3 Ｐ保護膜
層（Ｓｉドープ、４×１０18cm-3）を０．１５μｍ成長
させる。The p-GaAs substrate was doped with Zn,
A carrier having a carrier concentration of about 1 × 10 19 cm −3 was used. The plane orientation of the substrate is (100). First, p-GaAs (Zn-doped, 3 × 10 18 cm −3 ) was formed on the p-GaAs substrate.
The buffer layer is grown to about 0.5 μm. A p-In 0.5 Ga 0.2 Al 0.3 P protective film layer (Zn-doped, 5 × 10 17 cm −3 ) of 0.15 μm and a p-GaAs contact layer (Zn-doped, 3 × 10 18 cm −3 ) were sequentially formed on this. 0.1μ
m, p-Ga 0.2 Al 0.8 As current diffusion layer (Zn-doped 4 × 10 18 cm −3 ) 3 of about 7 μm, p-In 0.5 Al
0.5 P), clad layer (Zn-doped, 5 × 10 17 cm -3 ).
22 of about 1 μm, undoped In 0.5 Ga 0.21 Al
0.29 P active layer 20 of about 0.6 μm, n-In 0.5 Al
0.5 P clad layer (Si doped, 5 × 10 17 cm -3 ) 1
About 7 μm of n-Ga 0.2 Al 0.8 As thick film layer (Si-doped, 4 × 10 18 cm −3 ) and n-GaAs contact layer (Si-doped 4 × 10 18 cm −3 ) of 0.1 μm. Finally, an n-In 0.5 Ga 0.2 Al 0.3 P protective film layer (Si-doped, 4 × 10 18 cm −3 ) is grown to 0.15 μm.

【００５２】次にこのようにして得られたＩｎＧａＡｌ
Ｐ緑色ＬＥＤ用光半導体結晶１５のｎ−Ｉｎ0.5 Ｇａ
0.2 Ａｌ0.3 Ｐ保護膜層（オーミック電極形成を容易に
するためのｎ−ＧａＡｓコンタクト層の面を清浄に保つ
ために設けている）をリン酸で７０℃３０秒エッチング
して除去し（リン酸はＧａＡｓをエッチングしないので
制御良くＩｎＧａＡｌＰ保護膜層のみエッチ・オフでき
る）、真空蒸着法によりｎ−ＧａＡｓコンタクト層にＡ
ｕＧｅ合金層（Ｇｅ濃度０．５ｗｔ％）１１を０．５μ
ｍ蒸着した後に４８０℃１０分間Ａｒ雰囲気中でシンタ
リングしてオーミックコンタクトを形成する。Next, the InGaAl thus obtained was obtained.
N-In 0.5 Ga of optical semiconductor crystal 15 for P green LED
The 0.2 Al 0.3 P protective film layer (which is provided to keep the surface of the n-GaAs contact layer for facilitating the formation of the ohmic electrode clean) is removed by etching with phosphoric acid at 70 ° C. for 30 seconds (phosphoric acid Does not etch GaAs, so only the InGaAlP protective film layer can be etched off with good control).
uGe alloy layer (Ge concentration 0.5 wt%) 11 0.5μ
After vapor deposition, sintering is performed in an Ar atmosphere at 480 ° C. for 10 minutes to form an ohmic contact.

【００５３】ついでこれを写真触刻法により所定の形状
（例えば直径７０μｍ，ピッチが１８０μｍの電極パタ
ーン）にエッチングして電極１１を形成する。また、電
極１１以外の露出しているｎ−ＧａＡｓコンタクト層を
アンモニア水と過酸化水素水からなるエッチング液で除
去する。Then, this is etched into a predetermined shape (for example, an electrode pattern having a diameter of 70 μm and a pitch of 180 μm) by photolithography to form the electrode 11. Further, the exposed n-GaAs contact layer other than the electrode 11 is removed with an etching solution composed of aqueous ammonia and aqueous hydrogen peroxide.

【００５４】一方、厚さ２５０μｍ程度のｎ−ＧａＰ結
晶（Ｓドープ ３×１０17cm-3）の両面にＡｕＧｅ合金
層（Ｇｅ濃度０．５ｗｔ％）９，１３を０．５μｍ蒸着
した後５００℃２０分間Ａｒ雰囲気中でシンタリングし
てオーミックコンタクトを形成する。そして一方のＡｕ
Ｇｅ合金層１３の上に真空蒸着法によりＡｕＧｅ共晶合
金１２（Ｇｅ濃度１２ｗｔ％）を１μｍ程度蒸着する。
ついで両面のＡｕＧｅ合金を写真触刻法により前記電極
１１と同じパターンに成形する。On the other hand, AuGe alloy layers (Ge concentration: 0.5 wt%) 9, 13 were deposited by 0.5 μm on both surfaces of an n-GaP crystal (S-doped 3 × 10 17 cm −3 ) having a thickness of about 250 μm, and then 500. An ohmic contact is formed by sintering in an Ar atmosphere at 20 ° C. for 20 minutes. And one Au
An AuGe eutectic alloy 12 (Ge concentration: 12 wt%) is vapor-deposited on the Ge alloy layer 13 by a vacuum vapor deposition method to a thickness of about 1 μm.
Then, the AuGe alloy on both surfaces is formed into the same pattern as the electrode 11 by photolithography.

【００５５】このようにして電極形成された光半導体結
晶１５のｎ側電極１１とＧａＰ半導体結晶１４の共晶合
金１２を密着させた後、水素雰囲気中で４００℃５分熱
処理をする。この処理によりＡｕＧｅ共晶合金１２が溶
け（共晶温度３５６℃）電極１１と融着する。After the n-side electrode 11 of the optical semiconductor crystal 15 thus formed and the eutectic alloy 12 of the GaP semiconductor crystal 14 are brought into close contact with each other, heat treatment is performed at 400 ° C. for 5 minutes in a hydrogen atmosphere. By this treatment, the AuGe eutectic alloy 12 is melted (eutectic temperature 356 ° C.) and fused with the electrode 11.

【００５６】次にこのＡｕＧｅ合金の融着により接着一
体化したウェーハをアンモニア水と過酸化水素水のエッ
チング液によりｐ−ＧａＡｓ半導体結晶基板のみを除去
する。更にリン酸で７０℃３０秒エッチングしてｐ−Ｉ
ｎ0.5 Ｇａ0.2 Ａｌ0.3 Ｐ保護膜層を除去し、真空蒸着
法によりｐ−ＧａＡｓコンタクト層にＡｕＢｅ合金層を
０．３μｍ蒸着した後、４８０℃１０分間Ａｒ雰囲気中
でシンタリングしてオーミックコンタクトを形成する。
更にワイヤポンディングが容易にならしめるためにＡｕ
Ｂｅ合金層の上にＡｕを１μｍ程度蒸着した後、所定の
形状にエッチングしてＰ側電極５を形成する。Next, only the p-GaAs semiconductor crystal substrate is removed from the wafer integrally bonded by fusion of the AuGe alloy with an etching solution of ammonia water and hydrogen peroxide solution. Further, it was etched with phosphoric acid at 70 ° C for 30 seconds to give p
After removing the n 0.5 Ga 0.2 Al 0.3 P protective film layer and depositing 0.3 μm of AuBe alloy layer on the p-GaAs contact layer by vacuum deposition, sintering was performed in an Ar atmosphere at 480 ° C. for 10 minutes to form an ohmic contact. Form.
Furthermore, Au is used to facilitate wire bonding.
Au is vapor-deposited to a thickness of about 1 μm on the Be alloy layer and then etched into a predetermined shape to form the P-side electrode 5.

【００５７】また電極５以外の露出しているｐ−ＧａＡ
ｓコンタクト層はアンモニア水と過酸化水素水からなる
エッチング液で除去する。しかる後に所定のピッチでダ
イシングして個々のペレットに分離する。Exposed p-GaA other than the electrode 5
The s contact layer is removed with an etching solution composed of aqueous ammonia and aqueous hydrogen peroxide. Then, the pellets are diced at a predetermined pitch to be separated into individual pellets.

【００５８】このようにしてＧａＡｓ基板を除去してな
る高効率ＩｎＧａＡｌＰ緑色ＬＥＤ・半導体発光素子が
完成する。このＬＥＤではダブルヘテロ構造部の活性層
で発生した光はＰ側電極５側、ｎ−厚膜層１０側及び側
面に向うことになる。ｎ−厚膜層１０側に向かった光は
ｎ−厚膜層１０と空気との界面で１部が反射され、残り
は半導体結晶１４に向う。半導体結晶１４に入射した光
も半導体結晶が透明であるので有効に外に放射される。
この効果は電極１１，１３、及び９の面積が小さい程有
効となる（電極は光を吸収するので）。これにより輝度
が著しく向上し、２ｃｄ程度の緑色ＬＥＤが実現する。In this way, the high-efficiency InGaAlP green LED / semiconductor light-emitting device obtained by removing the GaAs substrate is completed. In this LED, the light generated in the active layer of the double hetero structure is directed to the P-side electrode 5 side, the n-thick film layer 10 side and the side surface. The light traveling toward the n-thick film layer 10 side is partially reflected at the interface between the n-thick film layer 10 and air, and the rest is directed to the semiconductor crystal 14. The light incident on the semiconductor crystal 14 is also effectively emitted to the outside because the semiconductor crystal is transparent.
This effect becomes more effective as the areas of the electrodes 11, 13, and 9 are smaller (because the electrodes absorb light). As a result, the brightness is significantly improved, and a green LED of about 2 cd is realized.

【００５９】なお、上記実施例において、ＩｎＧａＡｌ
Ｐ保護膜層、ＧａＡｓコンタクト層を形成してあるが、
これらの層は本発明においては本質的な事項ではなく、
これらの層がなくても特性上問題ない。また半導体結晶
としてｎ−ＧａＰを採用しているが、ｐ−ＧａＰを使用
しても良い。この場合は図４に示されている導電型はす
べて逆になる。またｎ型電極としてはＡｕＧｅの他にＡ
ｕＳｉ、ＡｕＳｎ等としても良く、Ｐ型電極としてはＡ
ｕＢｅの他にＡｕＺｎがある。共晶合金としてはＡｕＧ
ｅ以外にＡｕＳｉがある。またＡｕ系以外の金属や合金
のうち適切なものを使用しても本発明の効果を阻害する
ものではない。更にＧａＡｌＡｓ厚膜層についても同様
でなくても良い。In the above embodiment, InGaAl
Although the P protective film layer and the GaAs contact layer are formed,
These layers are not essential to the present invention,
There is no problem in terms of characteristics without these layers. Although n-GaP is used as the semiconductor crystal, p-GaP may be used. In this case, the conductivity types shown in FIG. 4 are all reversed. As the n-type electrode, in addition to AuGe, A
uSi, AuSn, or the like may be used, and A may be used as the P-type electrode.
In addition to uBe, there is AuZn. AuG as a eutectic alloy
In addition to e, there is AuSi. Further, the use of an appropriate metal or alloy other than Au does not impair the effects of the present invention. Further, the same may not be applied to the GaAlAs thick film layer.

【００６０】実施例では緑色ＬＥＤについて説明した
が、ＩｎＧａＡｌＰ活性層の組成を適宜変えることによ
り容易に黄色、橙色、赤色、赤外ＬＥＤ等にも適用可能
になる。Although the green LED has been described in the embodiment, it can be easily applied to yellow, orange, red, infrared LED and the like by appropriately changing the composition of the InGaAlP active layer.

【００６１】つぎに図５を参照して本発明の実施例２を
説明する。Next, a second embodiment of the present invention will be described with reference to FIG.

【００６２】これは金属反射層１８を設けるという点が
先に説明した図４の実施例１とは基本的に異なるが、効
果は同様である。光半導体発光素子１５の光半導体結晶
であるｎー厚膜層１０側に本発明の実施例１で記載した
通りの方法で所定の形状をもった電極１１を形成した
後、真空蒸着法にてＡｇを１μｍ程度蒸着し、このＡｇ
を光の反射そうとして利用する。一方、半導体結晶１４
には実施例１での説明したのと同様に、オーミック電極
１４と１６とを共晶合金１２で接合構造を形成するが、
この場合は発光層２から放射された光が金属反射層１８
で反射するので特定の形状にする必要はなく、写真触刻
法にてパターニングしない。This is basically the same as the first embodiment of FIG. 4 described above in that the metal reflection layer 18 is provided, but the effect is the same. An electrode 11 having a predetermined shape is formed on the n-thick film layer 10 side which is an optical semiconductor crystal of the optical semiconductor light emitting device 15 by the method as described in Example 1 of the present invention, and then the vacuum evaporation method is used. Ag is vapor-deposited to about 1 μm.
Is used to reflect light. On the other hand, the semiconductor crystal 14
In the same manner as described in Example 1, the ohmic electrodes 14 and 16 are formed by the eutectic alloy 12 to form a junction structure.
In this case, the light emitted from the light emitting layer 2 is reflected by the metal reflection layer 18
Since it is reflected by, it is not necessary to form a specific shape, and patterning is not performed by photolithography.

【００６３】それ以外の工程は本発明の実施例１と同様
である。The other steps are the same as in Example 1 of the present invention.

【００６４】本発明の実施例２の特徴は従来例２で説明
した半導体反射層と同じ効果を金属反射層１８により出
現させるという点で、半導体反射層よりも製造バラツキ
を少なくさせることが出来ることが優れている。The feature of the second embodiment of the present invention is that the metal reflection layer 18 has the same effect as the semiconductor reflection layer described in the second conventional example, and therefore the manufacturing variation can be made smaller than that of the semiconductor reflection layer. Is excellent.

【００６５】金属反射層１８の材料としては前記のＡｇ
の他にＡｕ Ａｌ Ｎｉ等の他に金属を用いても良いが
Ａｇは反射率の点で優れており、Ａｕは化学的安定性で
優れている。As the material of the metal reflection layer 18, the above-mentioned Ag is used.
Alternatively, a metal other than Au Al Ni or the like may be used, but Ag is excellent in reflectance and Au is excellent in chemical stability.

【００６６】Ｉｎ0.5 （Ｇａ1-x Ａｌx ）0.5 Ｐ・グラ
ッド層を成長させる前に先ず、ＧａＰ光半導体結晶基板
上にＩｎ1-v Ｇａv Ｐ組成勾配層（ｖ＝１→０．５）を
成長させることにより、ＧａＰ光半導体結晶基板とＩｎ
0.5 （Ｇａ1-x Ａｌx ）0.5Ｐ・グラッド層との間の格
子定数の違いを吸収させる方法がとられている。Before growing an In 0.5 (Ga 1-x Al x ) 0.5 P-grad layer, first, an In 1-v Ga v P composition gradient layer (v = 1 → 0.5) is formed on a GaP optical semiconductor crystal substrate. ) Is grown on the GaP optical semiconductor crystal substrate and In
A method of absorbing a difference in lattice constant between the 0.5 (Ga 1-x Al x ) 0.5 P-grad layer and the lattice constant is adopted.

【００６７】ｎーＧａＰ光半導体結晶基板２８側にオー
ミック電極１１（水玉電極）を、更にｎーＧａＰ光半導
体結晶基板２４上に積層したｐーＧａＡｓＰエピタキシ
ャル層２６側にオーミック電極１３（水玉電極）を設
け、熱融合で（ＧａＰ）緑色ＬＥＤウェーハーである光
半導体発光素子と（ＧａＡｓＰ）赤色ＬＥＤウェーハー
である光半導体発光素子とを共晶金属接合させて半導体
発光デバイスを構成する。又、Ｉｎ 1-vＧａv Ｐ組成勾
配の代りにＩｎ 1−v （Ｇａ1-w Ａｌw ）v ・Ｐ組成勾
配層（ｖ＝１→０．５）としても良い。The ohmic electrode 11 (polka dot electrode) is provided on the n-GaP optical semiconductor crystal substrate 28 side, and the ohmic electrode 13 (polka dot electrode) is further provided on the p-GaAsP epitaxial layer 26 layered on the n-GaP optical semiconductor crystal substrate 24. And a photo-semiconductor light-emitting device which is a (GaP) green LED wafer and a photo-semiconductor light-emitting device which is a (GaAsP) red LED wafer are eutectic metal bonded by thermal fusion to form a semiconductor light-emitting device. Further, In 1-v Ga v P instead of the gradient composition In 1-v (Ga 1- w Al w) v · P compositional gradient layer (v = 1 → 0.5) may be.

【００６８】そこで図５に示す発明実施例２によって構
成された半導体発光デバイスは、一方を光半導体結晶基
板１４例えばｎ−ＧａＰと、もう一方をｎー厚膜層１０
例えばｎ−ＧａＰ結晶若しくは、光半導体エピタキシャ
ル結晶成長層・ｐ−ＧａＰエピタキシャル層の上にｎー
Ｉｎ0.5 （Ｇａ1-x Ａｌx ）0.5 Ｐ・グラッド層２１，
ｐーＩｎ0.5 （Ｇａ1-x Ａｌx ）0.5 Ｐ・グラッド層２
２を成長させ、活性層２０とにより発光層を形成する。
更にｐー電流拡散層を構築した、光半導体発光素子（Ｌ
ＥＤウェーハー）１５とで、半導体発光デバイスを構成
するわけであるが、ｎー厚膜層１０に、所定の形に形状
化したオーミック電極１１（水玉電極）を形成し、該オ
ーミック電極面上全面に金属若しくは合金から成る金属
反射層１８を形成、更に、この金属反射層１８と光半導
体結晶基板１４上に形成したオーミック電極・全面電極
１７とを合金熱溶融により共晶合金化したオーミック電
極上構築物が形成される。そこでｎー厚膜層１０例えば
光半導体エピタキシャル結晶成長層上に形成された前記
オーミック電極の形状は、前記共晶合金化したオーミッ
ク電極上構築物が特定の形状を有する必要がなく、且つ
前記オーミック電極形成面上全面に施された金属若しく
は合金から成る反射層がＡｕ，Ａｌ，Ａｇ又は、反射率
の高い金属並びに合金であることを特徴とする半導体発
光デバイスである。Therefore, in the semiconductor light emitting device constructed according to the second embodiment of the invention shown in FIG. 5, one side is the optical semiconductor crystal substrate 14, for example, n-GaP, and the other side is the n-thick film layer 10.
For example, n-In 0.5 (Ga 1-x Al x ) 0.5 P-grad layer 21, on the n-GaP crystal or optical semiconductor epitaxial crystal growth layer / p-GaP epitaxial layer,
p-In 0.5 (Ga 1-x Al x ) 0.5 P-grad layer 2
2 is grown to form a light emitting layer with the active layer 20.
Further, an optical semiconductor light emitting device (L
A semiconductor light emitting device is composed of the ED wafer 15 and the ohmic electrode 11 (polka dot electrode) formed into a predetermined shape is formed on the n-thick film layer 10 and the entire surface of the ohmic electrode is formed. On the ohmic electrode in which a metal reflection layer 18 made of a metal or an alloy is formed, and the metal reflection layer 18 and the ohmic electrode / full surface electrode 17 formed on the optical semiconductor crystal substrate 14 are eutectic alloyed by alloy heat melting. A construct is formed. Therefore, the shape of the ohmic electrode formed on the n-thick film layer 10, for example, the optical semiconductor epitaxial crystal growth layer does not require that the eutectic alloyed ohmic electrode structure has a specific shape, and The semiconductor light emitting device is characterized in that the reflective layer made of a metal or an alloy applied over the entire formation surface is Au, Al, Ag, or a metal or an alloy having a high reflectance.

【００６９】第三の発明は少なくとも一つ以上の発光層
を構成する半導体エピタキシャル結晶成長層を有する半
導体発光素子同志若しくは少なくとも一つ以上の発光層
を構成する半導体エピタキシャル結晶成長層発光層を有
する半導体発光素子と光半導体結晶基板をベースとした
半導体発光素子との接合を金属によって共晶合金接合に
よって成る半導体発デバイスの各発光層により中間色を
発光するものである。そこで、次に図６を参照して発明
実施例３ついて説明する。A third invention is a semiconductor light emitting device having a semiconductor epitaxial crystal growth layer forming at least one light emitting layer or a semiconductor having a semiconductor epitaxial crystal growth layer light emitting layer forming at least one light emitting layer. The light emitting element and the semiconductor light emitting element based on the optical semiconductor crystal substrate are joined together by eutectic alloy bonding with a metal, and each light emitting layer of the semiconductor light emitting device emits an intermediate color. Therefore, a third embodiment of the invention will be described with reference to FIG.

【００７０】これは図４の光半導体結晶１４のかわり
に、ＧａＡｓＰ赤色ＬＥＤ（ピーク波長６５０ｎｍ程
度）ウェーハ・半導体発光素子２３を接合するという点
が先に説明した図４の実施例とは基本的に異なってい
る。This is basically the point that the GaAsP red LED (peak wavelength of about 650 nm) wafer / semiconductor light emitting device 23 is bonded instead of the optical semiconductor crystal 14 of FIG. 4 to the embodiment of FIG. 4 described above. Is different.

【００７１】このＧａＡｓＰ赤色ＬＥＤ（ピーク波長６
５０ｎｍ程度）ウェーハ・半導体発光素子２３は例えば
図６で示すように、このＧａＡｓＰ赤色ＬＥＤウェーハ
・半導体発光素子２３を構成するベースとなるｎ−Ｇａ
Ｐ光半導体結晶基板２４上に図６−２５ｎ−ＧａＡｓＰ
エピ層と図６−２６のｐ−ＧａＡｓＰエピ層を積層成長
させ、図６−２５ｎ−ＧａＡｓＰエピ層と図６−２６の
ｐ−ＧａＡｓＰエピ層とで発光層を形成する。This GaAsP red LED (peak wavelength 6
The wafer / semiconductor light-emitting element 23 is, for example, as shown in FIG. 6, an n-Ga substrate serving as a base of the GaAsP red LED wafer / semiconductor light-emitting element 23.
6-25n-GaAsP on the P optical semiconductor crystal substrate 24.
The epi layer and the p-GaAsP epi layer of FIG. 6-26 are grown in layers, and the light emitting layer is formed by the n-GaAsP epi layer of FIG. 6-25 and the p-GaAsP epi layer of FIG. 6-26.

【００７２】このＧａＡｓＰ赤色ＬＥＤウェハー・半導
体発光素子２３は図４で先に説明した方法によりＧａＰ
緑色ＬＥＤ（ピーク波長５６５ｎｍ程度）ウェハー・半
導体発光素子２７と接合される。This GaAsP red LED wafer / semiconductor light-emitting element 23 was GaP manufactured by the method previously described with reference to FIG.
A green LED (peak wavelength of about 565 nm) is bonded to the wafer / semiconductor light emitting element 27.

【００７３】一方、図６−２８はＧａＰ緑色ＬＥＤウェ
ハー・半導体発光素子２７を構成する為のベースとなる
ｎ−ＧａＰ基板２８上に、図６のｎ−ＧａＰエピ層２９
と図６のｐ−ＧａＰエピ層３０とで発光層を形成する。
このようにして得られた図６の半導体発光デバイス・チ
ップは赤と緑の中間色を発光するＬＥＤとなる。そして
接合面から第３の電極を取り出すことにより１個のチッ
プで赤から緑色までの光を任意に取り出すことができる
という特徴を持つ。On the other hand, FIG. 6-28 shows the n-GaP epilayer 29 of FIG. 6 on the n-GaP substrate 28 which is the base for constructing the GaP green LED wafer / semiconductor light-emitting element 27.
And the p-GaP epilayer 30 of FIG. 6 form a light emitting layer.
The thus obtained semiconductor light emitting device chip of FIG. 6 becomes an LED which emits an intermediate color between red and green. Then, by extracting the third electrode from the joint surface, it is possible to arbitrarily extract light from red to green with one chip.

【００７４】次に図７を参照して本発明実施例４につい
て説明する。Next, a fourth embodiment of the present invention will be described with reference to FIG.

【００７５】これは図４の半導体結晶１４のかわりに、
ｎ−ＧａＡｓＰエピ層光半導体エピタキシャル結晶成長
層３４をＧａＡｓ半導体結晶上に成長させた後エッチン
グによりＧａＡｓ半導体結晶を除去し、ｎ−ＧａＡｓＰ
エピ層光半導体エピタキシャル結晶成長層３４上にｎ−
ＧａＡｓＰエピ層光半導体エピタキシャル結晶成長層２
５とｐ−ＧａＡｓＰエピ層光半導体エピタキシャル結晶
成長層２６とを積層させ発光層を形成させる。これによ
りＧａＡｓＰ赤色ＬＥＤウエーハー３６を形成する点
が、先に説明した図４の本発明実施例１とは、基本的に
異なっており、もう１方のｎ−ＧａＰエピ層・光半導体
エピタキシャル結晶成長層３３をベースとしてなるＧａ
Ｐ緑色ＬＥＤウエーハー（ピーク波長５６５ｎｍ程度）
３５は、図６の本発明実施例３でのｎ−ＧａＰ結晶基板
２８から構成された（ＧａＰ）緑色ＬＥＤウエーハー２
７とは基本的にｎ−ＧａＰ結晶基板２８とｎ−ＧａＰエ
ピ層光半導体エピタキシャル結晶成長層３３並びにｎ−
ＧａＰ結晶基板２４とｎ−ＧａＡｓＰエピ層光半導体エ
ピタキシャル結晶成長層３４との対比点で異なってい
る。Instead of the semiconductor crystal 14 shown in FIG.
The n-GaAsP epitaxial layer optical semiconductor epitaxial crystal growth layer 34 is grown on the GaAs semiconductor crystal, and then the GaAs semiconductor crystal is removed by etching.
N− on the epitaxial layer optical semiconductor epitaxial crystal growth layer 34
GaAsP epitaxial layer optical semiconductor epitaxial crystal growth layer 2
5 and the p-GaAsP epitaxial layer optical semiconductor epitaxial crystal growth layer 26 are stacked to form a light emitting layer. The GaAsP red LED wafer 36 is thereby formed, which is basically different from the above-described first embodiment of the present invention shown in FIG. 4, and the other n-GaP epilayer / optical semiconductor epitaxial crystal growth is performed. Ga based on layer 33
P green LED wafer (peak wavelength of about 565 nm)
Reference numeral 35 is a (GaP) green LED wafer 2 composed of the n-GaP crystal substrate 28 in the third embodiment of the present invention shown in FIG.
7 is basically an n-GaP crystal substrate 28, an n-GaP epilayer optical semiconductor epitaxial crystal growth layer 33, and an n-
The GaP crystal substrate 24 and the n-GaAsP epilayer optical semiconductor epitaxial crystal growth layer 34 are different in comparison point.

【００７６】そこで、図７の本発明実施例４でのＧａＡ
ｓＰ赤色ＬＥＤ（ピーク波長６５０ｎｍ程度）ウェーハ
３６はｎ−ＧａＰエピタキシャル結晶成長層３４からな
り、図６の実施例３でのｎ−ＧａＰ結晶基板２４から構
成されたＧａＡｓＰ赤色ＬＥＤ（ピーク波長６５０ｎｍ
程度）ウェーハ２３とは基本的に特性も異なっくる。Therefore, GaA in the fourth embodiment of the present invention shown in FIG.
The sP red LED (peak wavelength of about 650 nm) wafer 36 is composed of the n-GaP epitaxial crystal growth layer 34, and is composed of the n-GaP crystal substrate 24 of Example 3 in FIG.
The characteristics are basically different from those of the wafer 23.

【００７７】図７の本発明実施例４での半導体発光素子
・ＧａＡｓＰ赤色ＬＥＤ（ピーク波長６５０ｎｍ程度）
ウェーハ３６は、ｎ−ＧａＡｓＰエピタキシャル結晶成
長層３４上に成長・積層構成された図７−２５のｎ−Ｇ
ａＡｓＰエピタキシャル結晶成長層と図７−２６のｐ−
ＧａＡｓＰエピタキシャル結晶成長層とで発光層を形成
する。Semiconductor light emitting device and GaAsP red LED (peak wavelength of about 650 nm) in Embodiment 4 of the present invention shown in FIG.
The wafer 36 is grown and laminated on the n-GaAsP epitaxial crystal growth layer 34 to form the n-G of FIG. 7-25.
aAsP epitaxial crystal growth layer and p- in FIG.
A light emitting layer is formed with the GaAsP epitaxial crystal growth layer.

【００７８】又このＧａＡｓＰ赤色ＬＥＤウェハー３６
である半導体発光素子ともう１方の半導体発光素子・
（ＧａＰ）緑色ＬＥＤ（ピーク波長５６５ｎｍ程度）ウ
ェーハ３５はｎ−ＧａＰ光半導体エピタキシャル結晶成
長層３３上に積層で構成された図７のｎ−ＧａＰエピタ
キシャル結晶成長層２９と図７のｐ−ＧａＡｓＰエピタ
キシャル結晶成長層３０とで発光層を形成する。Further, this GaAsP red LED wafer 36
Semiconductor light emitting device and another semiconductor light emitting device
The (GaP) green LED (peak wavelength of about 565 nm) wafer 35 is formed by stacking on n-GaP optical semiconductor epitaxial crystal growth layer 33, and n-GaP epitaxial crystal growth layer 29 of FIG. 7 and p-GaAsP epitaxial growth layer of FIG. A light emitting layer is formed with the crystal growth layer 30.

【００７９】この様にして構成したＧａＡｓＰ赤色ＬＥ
Ｄウェハー３６（ピーク波長６５０ｎｍ程度）である半
導体発光素子とＧａＰ緑色ＬＥＤウエ−ハー（ピーク波
長５６５ｎｍ程度）３５である半導体発光素子とを金属
間結合による共晶合金接合で半導体発光素子同志の結合
を行なつた半導体発光デバイスを製造した。GaAsP red LE thus constructed
The semiconductor light emitting device, which is the D wafer 36 (peak wavelength of about 650 nm) and the GaP green LED wafer (peak wavelength of about 565 nm) 35, are bonded together by eutectic alloy bonding by intermetallic bonding. A semiconductor light emitting device was manufactured.

【００８０】該半導体発光デバイス製造方法は第７の発
明である前記半導体発光素子の光半導体エピタキシャル
結晶成長層３３上に形成したオーミック電極ともう一方
の前記半導体発光素子の光半導体エピタキシャル結晶成
長層・ｐ−ＧａＡｓＰエピタキシャル層２６上にオーミ
ック電極を形成し、更に各オーミック電極上に共晶合金
化構築物を形成するため、該共晶合金化構築物と同形に
形状化させたｐ−ＧａＡｓＰエピタキシャル層２６とｎ
ーＧａＰエピタキシャル層３３のオーミック電極とを熱
処理によって融着させることになる。The semiconductor light-emitting device manufacturing method is the seventh invention, wherein the ohmic electrode formed on the optical semiconductor epitaxial crystal growth layer 33 of the semiconductor light-emitting device and the other optical semiconductor epitaxial crystal growth layer of the semiconductor light-emitting device are provided. An ohmic electrode is formed on the p-GaAsP epitaxial layer 26, and a eutectic alloyed structure is further formed on each ohmic electrode. Therefore, a p-GaAsP epitaxial layer 26 shaped in the same shape as the eutectic alloyed structure is formed. n
-The ohmic electrode of the GaP epitaxial layer 33 is fused by heat treatment.

【００８１】これによって該オーミック電極同志を金属
間結合により共晶合金接合させ成る半導体発光デバイス
製造方法である。図４，図６，図７の１１，１２，１３
の共晶合金化構築物の形成方法がこれである。This is a method for manufacturing a semiconductor light emitting device in which the ohmic electrodes are joined together by eutectic alloy bonding by intermetallic bonding. 11, 12, 13 of FIGS.
This is the method of forming the eutectic alloyed constructs of.

【００８２】図７で先に説明した方法によりＧａＰ緑色
ＬＥＤ（ピーク波長５６５ｎｍ程度）ウェハーである光
半導体発光素子（ＬＥＤウェーハー）３５は、図７の光
半導体エピタキシャル結晶成長層・ｐ−ＧａＰエピタキ
シャル層３３上にｎ−ＧａＰエピタキチャル結晶成長層
２９，ｐ−ＧａＰエピタキチャル結晶成長層３０で挟ん
だいわゆる薄い光導波路であるＮ／ＧａＰ発光層を形成
する。The optical semiconductor light emitting device (LED wafer) 35 which is a GaP green LED (peak wavelength of about 565 nm) wafer by the method described above with reference to FIG. 7 is the optical semiconductor epitaxial crystal growth layer / p-GaP epitaxial layer of FIG. An N / GaP light emitting layer which is a so-called thin optical waveguide sandwiched between the n-GaP epitaxial crystal growth layer 29 and the p-GaP epitaxial crystal growth layer 30 is formed on 33.

【００８３】このようにして得られた半導体発光デバイ
ス・チップは赤と緑の中間色のＬＥＤとなる。そして接
合面から第３の電極を取り出すことにより１個のチップ
で赤から緑色までの光を任意に取り出すことができると
いう特徴を持つ。又 青色ＬＥＤではＧａＮ，ＳｉＣエ
ピタキチャル結晶成長層を使用する。The semiconductor light emitting device chip thus obtained becomes an LED having an intermediate color between red and green. Then, by extracting the third electrode from the joint surface, it is possible to arbitrarily extract light from red to green with one chip. In addition, a blue LED uses a GaN, SiC epitaxial crystal growth layer.

【００８４】[0084]

【発明の効果】各半導体発光素子に順バイアスをそれぞ
れ印加して、各々の発光層から所定の波長光の発光を任
意に制御し半導体発光デバイス・チップ１個で緑と赤若
しくは赤と青又は緑と青の中間色の発光を任意に制御可
能にしたことを特徴とする半導体発光デバイス。EFFECTS OF THE INVENTION A forward bias is applied to each semiconductor light emitting element to arbitrarily control the emission of light of a predetermined wavelength from each light emitting layer, and one semiconductor light emitting device chip can be used for green and red or red and blue, or A semiconductor light emitting device characterized in that it is possible to arbitrarily control the emission of the intermediate color between green and blue.

【図面の簡単な説明】[Brief description of drawings]

【図１】従来技術による半導体発光素子の構造断面図の
一実施例。FIG. 1 is an example of a structural cross-sectional view of a semiconductor light emitting device according to a conventional technique.

【図２】従来技術による半導体発光素子の構造断面図の
一実施例。FIG. 2 is an example of a structural cross-sectional view of a semiconductor light emitting device according to a conventional technique.

【図３】従来技術による半導体発光素子の構造断面図の
一実施例。FIG. 3 is an example of a structural cross-sectional view of a semiconductor light emitting device according to a conventional technique.

【図４】本発明による半導体発光デバイスの構造断面図
の発明実施例１。FIG. 4 is an embodiment 1 of a structural sectional view of a semiconductor light emitting device according to the present invention.

【図５】本発明による半導体発光デバイスの構造断面図
の発明実施例２。FIG. 5 is an embodiment 2 of the structural sectional view of the semiconductor light emitting device according to the present invention.

【図６】本発明による半導体発光デバイスの構造断面図
の発明実施例３。FIG. 6 is an embodiment 3 of the structural sectional view of the semiconductor light emitting device according to the present invention.

【図７】本発明による半導体発光デバイスの構造断面図
の発明実施例４。FIG. 7 is an embodiment 4 of a structural sectional view of a semiconductor light emitting device according to the present invention.

【符号の説明】[Explanation of symbols]

１ ｎ−半導体基板 ２ 発光層 ３ ｐ−電流拡散層 ４ ｎ側電極 ５ ｐ側電極 ６ 反射層 ７ ｎ−Ｇａｐ基板 ８ ｎ−組成勾配層 ９ ｎ側水玉電極 １０ ｎ−厚膜層（ｎ−半導体膜厚エピタキシャル結晶
成長層） １１ ｎ水玉電極 １２ 共晶合金 １３ ｎ−水玉電極 １４ 半導体結晶 １５ ＬＥＤウェーハー・半導体発光素子 １６ 全面電極 １７ 全面電極 １８ 金属反射層 ２０ 活性層 ２１ ｎ−クラッド層 ２２ ｐ−クラッド層 ２３ （ＧａＡｓＰ）赤色ＬＥＤウェーハー・半導体発
光素子 ２４ ｎ−Ｇａｐ基板 ２５ ｎ−Ｇａｐエピ（エピタキシャル）層 ２６ ｐ−ＧａＡｓＰエピ（エピタキシャル）層 ２７ （ＧａＰ）緑色ＬＥＤウェーハー・半導体発光素
子 ２８ ｎ−Ｇａｐ基板 ２９ ｎ−Ｇａｐエピ（エピタキシャル）層 ３０ ｐ−Ｇａｐエピ（エピタキシャル）層 ３１ バイアス電圧 ３２ バイアス電圧 ３３ ｎ−Ｇａｐエピ層（ｎ−半導体膜厚エピタキシャ
ル結晶成長層） ３４ ｎ−Ｇａｐエピ層（ｎ−半導体膜厚エピタキシャ
ル結晶成長層）1 n-semiconductor substrate 2 light emitting layer 3 p-current diffusion layer 4 n-side electrode 5 p-side electrode 6 reflective layer 7 n-Gap substrate 8 n-composition gradient layer 9 n-side polka dot electrode 10 n-thick film layer (n- Semiconductor film Epitaxial crystal growth layer) 11 n Polka dot electrode 12 Eutectic alloy 13 n-Polka dot electrode 14 Semiconductor crystal 15 LED wafer / semiconductor light emitting device 16 Full surface electrode 17 Full surface electrode 18 Metal reflective layer 20 Active layer 21 n-Clad layer 22 p-clad layer 23 (GaAsP) red LED wafer / semiconductor light emitting device 24 n-Gap substrate 25 n-Gap epi (epitaxial) layer 26 p-GaAsP epi (epitaxial) layer 27 (GaP) green LED wafer / semiconductor light emitting device 28 n-Gap substrate 29 n-Gap epi (epitaxial) layer 30 p-Gap epi (epi) Kisharu) layer 31 bias voltage 32 bias voltage 33 n-Gap, epi layer (n- semiconductor film thickness epitaxial crystal growth layer) 34 n-Gap, epi layer (n- semiconductor film thickness epitaxial crystal growth layer)

Claims (8)

【特許請求の範囲】[Claims] 【請求項１】 光半導体結晶基板上に少なくとも一つ以
上の発光層を構成する半導体発光素子同志若しくは光半
導体結晶基板上に少なくとも一つ以上の発光層を構成す
る半導体発光素子と光半導体結晶基板とを金属によって
接合して成ることを特徴とする半導体発光デバイス。1. A semiconductor light emitting device having at least one light emitting layer on an optical semiconductor crystal substrate, or a semiconductor light emitting device having at least one light emitting layer on an optical semiconductor crystal substrate, and an optical semiconductor crystal substrate. A semiconductor light-emitting device characterized by being formed by joining and with a metal. 【請求項２】 少なくとも一つ以上の発光層と光半導体
厚膜エピタキシヤル結晶成長層とで構成された半導体発
光素子同志若しくは少なくとも一つ以上の発光層と光半
導体厚膜エピタキシヤル結晶成長層とで構成された半導
体発光素子と光半導体結晶基板とを金属によって接合し
て成ることを特徴とする半導体発光デバイス。2. A semiconductor light emitting device composed of at least one light emitting layer and an optical semiconductor thick film epitaxial crystal growth layer, or at least one light emitting layer and an optical semiconductor thick film epitaxial crystal growth layer. 2. A semiconductor light emitting device comprising a semiconductor light emitting element composed of and an optical semiconductor crystal substrate joined together by a metal. 【請求項３】 請求項１並びに請求項２に記載の半導体
発光デバイスにおいて、半導体発光素子の光半導体エピ
タキシャル結晶成長層同志若しくは半導体発光素子の光
半導体エピタキシャル結晶成長層と光半導体結晶基板の
接合に用いた金属が共晶合金であることを特徴とする半
導体発光デバイス。3. The semiconductor light emitting device according to claim 1 or 2, wherein the optical semiconductor epitaxial crystal growth layer of the semiconductor light emitting device is the same or the optical semiconductor epitaxial crystal growth layer of the semiconductor light emitting device is joined to the optical semiconductor crystal substrate. A semiconductor light-emitting device, wherein the metal used is a eutectic alloy. 【請求項４】 請求項１並びに請求項２に記載の半導体
発光デバイスにおいて、光半導体結晶基板若しくは光半
導体エピタキシャル結晶成長層が発光層により発する光
のエネルギーよりも大きなバンドギャップを有する半導
体結晶であることを特徴とする半導体発光デバイス。4. The semiconductor light emitting device according to claim 1 or 2, wherein the optical semiconductor crystal substrate or the optical semiconductor epitaxial crystal growth layer is a semiconductor crystal having a band gap larger than the energy of light emitted by the light emitting layer. A semiconductor light-emitting device characterized by the above. 【請求項５】 請求項１並びに請求項２に記載の半導体
発光デバイスにおいて、少なくとも一つ以上の発光層で
構成された半導体発光素子を少なくとも二つ以上順方向
に接合し、且つ該半導体発光素子に順バイアスをそれぞ
れ印加して各発光層から各々の発光輝度を制御可能にし
たことを特徴とする半導体発光デバイス。5. The semiconductor light emitting device according to claim 1 or 2, wherein at least two semiconductor light emitting elements each including at least one light emitting layer are joined in a forward direction, and the semiconductor light emitting elements are joined together. A semiconductor light-emitting device characterized in that a forward bias is applied to each of the light-emitting layers to control the emission brightness of each light-emitting layer. 【請求項６】 請求項１並びに請求項２に記載の半導体
発光デバイスにおいて、少なくとも一つ以上の発光層で
構成された半導体発光素子を少なくとも二つ以上順方向
に接合し、且つ該半導体発光素子に順バイアスをそれぞ
れ印加して、各々の発光層からの発光を任意に制御し半
導体発光デバイスのチップ１個で緑と赤若しくは赤と青
又は緑と青の中間色の発光を任意に制御可能にしたこと
を特徴とする半導体発光デバイス。6. The semiconductor light emitting device according to claim 1 or 2, wherein at least two or more semiconductor light emitting elements each including at least one light emitting layer are joined in a forward direction, and the semiconductor light emitting elements are joined together. A forward bias is applied to each to arbitrarily control the light emission from each light emitting layer, and one semiconductor light emitting device chip can arbitrarily control the light emission of green and red or red and blue or intermediate colors of green and blue. A semiconductor light emitting device characterized by the above. 【請求項７】 請求項１並びに請求項２に記載の半導体
発光デバイスにおいて、半導体発光素子の光半導体エピ
タキシャル結晶成長層上に形成したオーミック電極と光
半導体結晶基板上に形成したオーミック電極共晶合金化
構築物とを所定の形に同形形状化させ且つ、熱処理によ
って融着させ、該オーミック電極同志を金属間結合によ
り共晶合金接合させたことを特徴とする半導体発光デバ
イス。7. The semiconductor light emitting device according to claim 1, wherein the ohmic electrode formed on the optical semiconductor epitaxial crystal growth layer of the semiconductor light emitting element and the ohmic electrode eutectic alloy formed on the optical semiconductor crystal substrate. A semiconductor light-emitting device, which has the same shape as a chemical structure and is fused by heat treatment to bond the ohmic electrodes to each other by eutectic alloy bonding by intermetallic bonding. 【請求項８】 請求項１並びに請求項２に記載の半導体
発光デバイスにおいて、半導体発光素子の光半導体エピ
タキシャル結晶成長層上に所定の形に形状化したオーミ
ック電極形成面上全面に金属若しくは合金反射層で光半
導体結晶基板上に形成したオーミック電極上を共晶合金
化した構築物が特定の形状を有する必要がなく、且つ前
記オーミック電極形成面上全面に施された金属若しくは
合金反射層がＡｕ，Ａｌ，Ａｇ又は反射率の高い金属並
びに合金であることを特徴とする半導体発光デバイス。8. The semiconductor light emitting device according to claim 1 or 2, wherein a metal or alloy reflection is formed on the entire surface of the ohmic electrode formation surface formed into a predetermined shape on the optical semiconductor epitaxial crystal growth layer of the semiconductor light emitting element. The structure in which the eutectic alloy is formed on the ohmic electrode formed on the optical semiconductor crystal substrate in a layer does not need to have a specific shape, and the metal or alloy reflective layer applied on the entire surface on which the ohmic electrode is formed is Au, A semiconductor light emitting device, which is made of Al, Ag, or a metal or alloy having a high reflectance.
JP4049590A 1992-03-06 1992-03-06 Semiconductor light emitting device Pending JPH05251739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4049590A JPH05251739A (en) 1992-03-06 1992-03-06 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4049590A JPH05251739A (en) 1992-03-06 1992-03-06 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPH05251739A true JPH05251739A (en) 1993-09-28

Family

ID=12835449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4049590A Pending JPH05251739A (en) 1992-03-06 1992-03-06 Semiconductor light emitting device

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