JPH05238857A - Method for metallizing substrate of aluminum nitride - Google Patents
Method for metallizing substrate of aluminum nitrideInfo
- Publication number
- JPH05238857A JPH05238857A JP4040814A JP4081492A JPH05238857A JP H05238857 A JPH05238857 A JP H05238857A JP 4040814 A JP4040814 A JP 4040814A JP 4081492 A JP4081492 A JP 4081492A JP H05238857 A JPH05238857 A JP H05238857A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- metallized layer
- paste
- substrate
- aln
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、窒化アルミニウム基板
のメタライズ方法に関する。特に、信頼性が高く、実用
的な接着強度を備え、かつ、ろう付けや高温はんだ付け
に対して高い信頼性を有する窒化アルミニウム基板のメ
タライズ方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for metallizing an aluminum nitride substrate. In particular, the present invention relates to a method for metallizing an aluminum nitride substrate which is highly reliable, has practical adhesive strength, and has high reliability for brazing and high temperature soldering.
【０００２】[0002]
【従来の技術】窒化アルミニウム（以下、ＡｌＮと記
す）焼結体は、熱伝導率が高く電気絶縁性に優れ、熱膨
張係数がＳｉに近いという特徴を有することから、パワ
ー半導体搭載用の放熱板を兼ねた絶縁板への適用が期待
されている。従来のパワー半導体では、Ｃｕ，Ｆｅ，Ａ
ｌ系の放熱板と半導体チップとの間にＡｌ2 Ｏ3 の絶縁
板がおかれ、それらの接続にはろう付けやはんだが一般
的に用いられてきた。この絶縁板をＡｌ2 Ｏ3 からＡｌ
Ｎに置換することにより放熱特性の向上及び低熱抵抗化
を図ることができる。これを実現するためにはＡｌＮ表
面をメタライズする技術が必須となる。2. Description of the Related Art Aluminum nitride (hereinafter referred to as "AlN") sintered bodies are characterized by high thermal conductivity, excellent electrical insulation, and a thermal expansion coefficient close to that of Si. It is expected to be applied to an insulating plate that doubles as a plate. In conventional power semiconductors, Cu, Fe, A
An Al 2 O 3 insulating plate is placed between the 1-system heat sink and the semiconductor chip, and brazing or soldering has been generally used for connecting them. This insulating plate is changed from Al 2 O 3 to Al
By substituting N, it is possible to improve the heat dissipation characteristics and reduce the thermal resistance. In order to realize this, a technique of metallizing the AlN surface is essential.
【０００３】ＡｌＮ焼結体のメタライズ方法としては、
Ｗ，Ｍｏ等の高融点金属をペースト状にしたものをＡｌ
Ｎの表面に塗布し、１１００〜１６００℃程度の湿潤窒
素−水素混合雰囲気中で焼結させる方法が試みられてい
る。この方法は一般にテレフンケン法として知られ、従
来、Ａｌ2 Ｏ3 中の粒界相成分であるＳｉＯ2 によって
促進される酸化物の液相反応を利用することにより、メ
タライズ層を形成する技術として利用されてきた。しか
し、ＡｌＮはガラスとの濡れが悪く、ＳｉＯ2等の不純
物が含まれていないため液相反応も起こりにくく、十分
な接着強度が得られない。As a method of metallizing an AlN sintered body,
A high-melting-point metal such as W or Mo in the form of paste is Al
A method of applying it to the surface of N and sintering it in a wet nitrogen-hydrogen mixed atmosphere at about 1100 to 1600 ° C. has been attempted. This method is generally known as the Telefunken method, and is conventionally used as a technique for forming a metallized layer by utilizing a liquid phase reaction of an oxide promoted by SiO 2 which is a grain boundary phase component in Al 2 O 3. It has been. However, AlN has poor wettability with glass and does not contain impurities such as SiO 2 so that liquid-phase reaction hardly occurs and sufficient adhesive strength cannot be obtained.
【０００４】特開昭６３−１１５３９３号公報には、Ｗ
及び／又はＭｏと接着強度増強剤としてＳｉＯ2 、Ａｌ
2 Ｏ3 、ＣａＯの酸化物混合体とを主成分とする導体ペ
ーストをＡｌＮ焼結基板上に印刷した後、１６００℃以
上で焼成する方法が開示されている。しかし、この方法
は焼成温度が高くコスト面で問題がある上、基板に反り
が発生するという問題点があった。また、特開平３−１
９３６８６号公報には、ＷとＳｉＯ2 、Ａｌ2 Ｏ3 、Ｃ
ａＯの酸化物混合体とを主成分とする導体ペーストにお
いて、酸化物成分比の最適範囲を規定することにより、
ＡｌＮ焼結体及びＷの両者の間にともに十分な濡れ性と
接着強度とを付与する方法が開示されている。しかし、
ＡｌＮはガラスとの濡れが悪く、この方法では十分な濡
れ性と接着強度とを付与することはできない。また、酸
化物成分がメタライズ層上にガラス成分として浮き出る
ため、電気抵抗の増大やメッキ不良及びはんだ濡れ不良
が発生するという問題点があった。In Japanese Patent Laid-Open No. 63-115393, W
And / or Mo and SiO 2 , Al as an adhesive strength enhancer
A method is disclosed in which a conductor paste containing an oxide mixture of 2 O 3 and CaO as a main component is printed on an AlN sintered substrate and then fired at 1600 ° C. or higher. However, this method has a problem that the firing temperature is high and there is a problem in cost, and that the substrate is warped. In addition, Japanese Patent Laid-Open No. 3-1
No. 93686 discloses W, SiO 2 , Al 2 O 3 and C.
In a conductor paste containing an oxide mixture of aO as the main component, by defining the optimum range of the oxide component ratio,
A method for providing sufficient wettability and adhesive strength between both the AlN sintered body and W is disclosed. But,
AlN has poor wettability with glass, and it is impossible to impart sufficient wettability and adhesive strength by this method. Further, since the oxide component floats as a glass component on the metallized layer, there is a problem that an increase in electric resistance, defective plating, and defective solder wetting occur.
【０００５】[0005]
【発明が解決しようとする課題】本発明は前記問題点を
解決し、信頼性が高く、実用的な接着強度を備え、か
つ、ろう付けや高温はんだ付けに対して高い信頼性を有
するＡｌＮ基板のメタライズ技術を提供することを目的
とする。The present invention solves the above problems, has high reliability, has practical adhesive strength, and has high reliability for brazing and high-temperature soldering. It aims to provide the metallization technology of.
【０００６】[0006]
【課題を解決するための手段】本発明は、Ｗ及び又はＭ
ｏを主成分としＳｉＯ2 及び水素化チタンを含むペース
トをＡｌＮ焼結基板上に塗布して焼成し、メタライズ層
を形成することを特徴とする。ペーストの塗布にはスク
リーン印刷を用い、厚さ１０〜５０μｍの導電性の膜を
形成するのが適当である。SUMMARY OF THE INVENTION The present invention provides W and / or M
It is characterized in that a paste containing SiO 2 and titanium hydride as a main component of o is applied on an AlN sintered substrate and fired to form a metallized layer. Screen printing is used for applying the paste, and it is suitable to form a conductive film having a thickness of 10 to 50 μm.
【０００７】上記のペースト中には、ＳｉＯ2 を０．１
重量％以上２０重量％以下、水素化チタンを０．１重量
％以上５０重量％以下含有すると好適である。また、焼
成は、非酸化雰囲気中、経済的には窒素雰囲気中１４０
０℃以上１７００℃以下に加熱することによりペースト
をＡｌＮ焼結基板へ焼付ける。焼成に先立って、ペース
ト中に含まれる有機物を除去するために脱脂処理を行っ
てもよい。In the above paste, 0.1% SiO 2 is added.
It is preferable that the content of the titanium hydride is not less than 20% by weight and the amount of titanium hydride is not less than 0.1% and not more than 50% by weight. In addition, firing is performed in a non-oxidizing atmosphere, economically in a nitrogen atmosphere at 140
The paste is baked on the AlN sintered substrate by heating at 0 ° C. or higher and 1700 ° C. or lower. Prior to firing, a degreasing treatment may be performed to remove organic substances contained in the paste.
【０００８】さらに必要であれば、無電界メッキなどに
よりＮｉ、Ｃｕ、Ａｕ、Ｐｔなどの金属皮膜を上記の方
法で形成されたメタライズ層上に形成する。If necessary, a metal film of Ni, Cu, Au, Pt or the like is formed on the metallized layer formed by the above method by electroless plating or the like.
【０００９】[0009]
【作用】本発明では、ペースト中にＳｉＯ2 及び水素化
チタンを含有することにより、実用的な接着強度と良好
なはんだ濡れ性を有するメタライズ層を得ている。その
メカニズムは定かではないが、以下のような可能性が考
えられる。本発明によれば、Ｗ及び／又はＭｏを酸化物
による液相反応と活性金属の拡散・反応とによってメタ
ライズ層を形成する。In the present invention, by containing SiO 2 and titanium hydride in the paste, a metallized layer having practical adhesive strength and good solder wettability is obtained. The mechanism is not clear, but the following possibilities are considered. According to the present invention, the metallized layer is formed by the liquid phase reaction of W and / or Mo with the oxide and the diffusion / reaction of the active metal.
【００１０】メタライズ用ペースト中に含有される水素
化チタンがメタライズ層−ＡｌＮ基板界面へ拡散する際
に、ＳｉＯ2 及びＡｌＮ粒子表面を覆う酸化物層のＡｌ
2 Ｏ 3 の一部と共に移動するため、メタライズ層表面へ
のガラス成分の移動の割合が低減される。そのため、従
来のように酸化物による液相反応のみを利用したメタラ
イズ方法と比較して、信頼性が高く実用的な密着強度を
備えたメタライズ層を有するＡｌＮ焼結体を得ることが
できるようになる。また、メッキ不良及びはんだ濡れ不
良を解消することができると考えられる。Hydrogen contained in the metallizing paste
When titanium oxide diffuses to the metallized layer-AlN substrate interface
And SiO2 And Al of the oxide layer covering the surface of the AlN particles
2 O 3 To move to part of the metallized layer
The rate of movement of the glass component of is reduced. Therefore, subordinate
Metallurgy using only liquid phase reaction with oxide as in the past
Compared with the Iz method, it has more reliable and practical adhesion strength.
To obtain an AlN sintered body having a metallized layer with
become able to. In addition, plating failure and solder wetting
It is thought that good can be resolved.
【００１１】本発明ではペースト中に水素化チタンを添
加しているが、これは活性金属としてチタンを単味で添
加する場合、金属チタンより水素化チタンの方が安定な
ためである。特に微粉化した場合、ＴｉＨ2 は窒素雰囲
気中で約７００℃まで分解・酸化せずに存在することを
実験的に確認している。本発明では、非酸化性雰囲気
中、好ましくは窒素雰囲気中１４００℃以上１７００℃
以下という低温でメタライズ層を形成するため、従来の
メタライズ方法のようなＡｌＮ基板の変形が発生しな
い。また、雰囲気制御が容易でコスト的にも有利であ
る。In the present invention, titanium hydride is added to the paste because titanium hydride is more stable than metallic titanium when titanium alone is added as the active metal. In particular, it has been experimentally confirmed that TiH 2 exists in a nitrogen atmosphere without decomposition and oxidation up to about 700 ° C. when pulverized. In the present invention, in a non-oxidizing atmosphere, preferably in a nitrogen atmosphere, 1400 ° C. or higher and 1700 ° C.
Since the metallization layer is formed at a low temperature as described below, the deformation of the AlN substrate unlike the conventional metallization method does not occur. Further, the atmosphere control is easy, which is advantageous in terms of cost.
【００１２】ペースト中に含有されるＳｉＯ2 量は０．
１重量％未満では酸化物による液相生成量が不足するた
め密着強度が低下する。また、ＳｉＯ2 量が２０重量％
以上では液相生成量が多すぎ、Ｗ及び／又はＭｏ粒子表
面をガラス成分が覆いつくすため、密着強度が低下する
上に電気抵抗が増大する。ペースト中に含有される水素
化チタン量は、０．１重量％未満では十分な密着強度が
得られず、また５０重量％以上ではメタライズ層の強度
が不足しなおかつ電気抵抗が大きくなる。よってペース
ト中に含有されるＳｉＯ2 量は０．１重量％以上２０重
量％以下、水素化チタン量は０．１重量％以上５０重量
％以下とするのがよい。The amount of SiO 2 contained in the paste is 0.
If it is less than 1% by weight, the amount of the liquid phase produced by the oxide is insufficient, so that the adhesion strength is lowered. Also, the amount of SiO 2 is 20% by weight
In the above case, the amount of liquid phase produced is too large, and the surface of the W and / or Mo particles is covered with the glass component, so that the adhesion strength decreases and the electrical resistance increases. If the amount of titanium hydride contained in the paste is less than 0.1% by weight, sufficient adhesion strength cannot be obtained, and if it is 50% by weight or more, the strength of the metallized layer is insufficient and the electrical resistance increases. Therefore, it is preferable that the amount of SiO 2 contained in the paste is 0.1% by weight or more and 20% by weight or less, and the amount of titanium hydride is 0.1% by weight or more and 50% by weight or less.
【００１３】さらに必要であれば、無電界めっきなどに
よりＮｉ、Ｃｕ、Ａｕ、Ｐｔなどの金属皮膜を上記の方
法で形成されたメタライズ層上に形成することも可能で
ある。If necessary, a metal film of Ni, Cu, Au, Pt or the like can be formed on the metallized layer formed by the above method by electroless plating or the like.
【００１４】[0014]
【実施例】以下に実施例を示す。ここでは水素化チタン
としてＴｉＨ2 を用いたが、ＴｉＨ2 は水素化チタンの
不定比化合物をも代表するものである。 〔実施例１〕平均粒径２〜３μｍ、最大粒子径５μｍ以
下のＷ粉末に、平均粒径２〜３μｍ、最大粒径５μｍ以
下のＳｉＯ2 と、平均粒径５〜１０μｍの水素化チタン
（ＴｉＨ2 ）とを表１の割合で混合した粉末中にアクリ
ル樹脂、テレピネオールを添加し、３本ロールミルを用
いて、十分混練することによりペーストを作成した。こ
のペーストをＡｌＮの含有量が９８重量％であるＡｌＮ
焼結基板に、１ｍｍ×１ｍｍの大きさのパッドパターン
を約２０μｍの厚さで形成するようにスクリーン印刷し
た。この試料を乾燥した後、窒素雰囲気中で１５００〜
１６００℃で焼成したメタライズ層を形成した。EXAMPLES Examples will be shown below. Although TiH 2 is used here as titanium hydride, TiH 2 also represents a non-stoichiometric compound of titanium hydride. Example 1 The average particle diameter of 2 to 3 [mu] m, the following W powder maximum particle size 5 [mu] m, an average particle diameter of 2 to 3 [mu] m, and maximum particle size 5 [mu] m or less of SiO 2, having an average particle size of 5~10μm titanium hydride ( Acrylic resin and terpineol were added to the powder obtained by mixing TiH 2 ) with the ratio shown in Table 1 and sufficiently kneaded with a three-roll mill to prepare a paste. This paste is AlN containing 98% by weight of AlN.
The sintered substrate was screen-printed so as to form a pad pattern having a size of 1 mm × 1 mm with a thickness of about 20 μm. After this sample was dried, it was dried in a nitrogen atmosphere at 1500-500.
A metallized layer was formed by firing at 1600 ° C.
【００１５】このようにして形成されたメタライズ層表
面に約２μｍの厚膜を有するＮｉめっき層を形成した。
このめっき層上にリードフレームをはんだ付けし、リー
ドフレームを垂直方向に５ｍｍ／ｍｉｎで引っ張ること
によりピール強度（引き剥し強度）を測定した。また、
このＮｉめっき層を形成した試料を、２５０℃の６０Ｓ
ｎ−Ｐｂはんだ浴中に浸漬することによりはんだ濡れ性
を調べた。A Ni plating layer having a thickness of about 2 μm was formed on the surface of the metallized layer thus formed.
A lead frame was soldered on the plated layer, and the lead frame was pulled vertically at 5 mm / min to measure the peel strength (peeling strength). Also,
The sample on which this Ni plating layer was formed was subjected to 60S at 250 ° C.
The solder wettability was investigated by immersing in an n-Pb solder bath.
【００１６】以上のようにして測定したピール強度及び
はんだ濡れ性を表１〜３に示す。表中＊を付したものは
ＡｌＮとメタライズ層で破壊したもの又ははんだ濡れ性
の低いものである。 〔実施例２〕平均粒径０．５〜１μｍ、最大粒子２μｍ
以下のＷ粉末に、平均粒径１〜２μｍ、最大粒径３μｍ
以下のＳｉＯ2 と、平均粒径５〜１０μｍの水素化チタ
ン（ＴｉＨ2 ）とを表２の割合で混合し、実施例１と同
様にメタライズ層を形成した後、ピール強度の測定判定
とはんだ濡れ性試験を行った。結果を表４〜６に示す。The peel strength and solder wettability measured as described above are shown in Tables 1 to 3. Those marked with * in the table are those which were destroyed by AlN and the metallized layer or which had low solder wettability. Example 2 Average particle size 0.5 to 1 μm, maximum particle 2 μm
The following W powder has an average particle size of 1 to 2 μm and a maximum particle size of 3 μm
The following SiO 2 and titanium hydride (TiH 2 ) having an average particle size of 5 to 10 μm were mixed in the ratio shown in Table 2, and a metallized layer was formed in the same manner as in Example 1. A wettability test was conducted. The results are shown in Tables 4-6.
【００１７】〔実施例３〕主成分としてＭｏを用いた例
を表７〜８に示した。 〔実施例４〕主成分としてＭｏ：Ｗ＝１：１に混合した
例を表９〜１０に示した。[Example 3] Tables 7 to 8 show examples using Mo as a main component. [Example 4] Tables 9 to 10 show examples in which Mo: W = 1: 1 was mixed as the main component.
【００１８】[0018]
【表１】 [Table 1]
【００１９】[0019]
【表２】 [Table 2]
【００２０】[0020]
【表３】 [Table 3]
【００２１】[0021]
【表４】 [Table 4]
【００２２】[0022]
【表５】 [Table 5]
【００２３】[0023]
【表６】 [Table 6]
【００２４】[0024]
【表７】 [Table 7]
【００２５】[0025]
【表８】 [Table 8]
【００２６】[0026]
【表９】 [Table 9]
【００２７】[0027]
【表１０】 [Table 10]
【００２８】本発明によって形成されたメタライズ層で
はＡｌＮ焼結基板内で破壊が起こり、密着強度はピール
強度として３ｋｇｆ／ｍｍ□以上のものが得られ実用上
十分な強度を有している。また、はんだ濡れ性も９５％
以上の濡れ性を示した。一方、本発明において限定した
範囲外の方法で形成したメタライズ層では、いずれの試
料においても十分な密着強度が得られず、ピール強度が
２ｋｇｆ／ｍｍ□以下であった。また、はんだ濡れ性も
９０％以下であった。In the metallized layer formed according to the present invention, breakage occurs in the AlN sintered substrate, and the adhesive strength is 3 kgf / mm □ or more as the peel strength, which is a practically sufficient strength. Also, solder wettability is 95%
The above-mentioned wettability was exhibited. On the other hand, in the case of the metallized layer formed by the method outside the range limited in the present invention, sufficient adhesion strength was not obtained in any of the samples, and the peel strength was 2 kgf / mm □ or less. The solder wettability was also 90% or less.
【００２９】[0029]
【発明の効果】本発明によれば、放熱性特性にすぐれろ
う付けやはんだ付けに対して信頼性の高いＡｌＮ基板を
得ることができる。According to the present invention, it is possible to obtain an AlN substrate having excellent heat dissipation properties and high reliability for brazing and soldering.
Claims (2)
2 及び水素化チタンを含有するペーストを窒化アルミニ
ウム焼結基板に塗布して非酸化性雰囲気中で焼成し、メ
タライズ層を形成することを特徴とする窒化アルミニウ
ム基板のメタライズ方法。1. A SiO 2 containing W and / or Mo as a main component.
2. A method for metallizing an aluminum nitride substrate, which comprises applying a paste containing 2 and titanium hydride to an aluminum nitride sintered substrate and firing it in a non-oxidizing atmosphere to form a metallized layer.
成することを特徴とする請求項１記載の窒化アルミニウ
ム基板のメタライズ方法。2. The method for metallizing an aluminum nitride substrate according to claim 1, further comprising forming a metal film on the metallized layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4040814A JP2578283B2 (en) | 1992-02-27 | 1992-02-27 | Metallization method for aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4040814A JP2578283B2 (en) | 1992-02-27 | 1992-02-27 | Metallization method for aluminum nitride substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05238857A true JPH05238857A (en) | 1993-09-17 |
| JP2578283B2 JP2578283B2 (en) | 1997-02-05 |
Family
ID=12591123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4040814A Expired - Lifetime JP2578283B2 (en) | 1992-02-27 | 1992-02-27 | Metallization method for aluminum nitride substrate |
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| Country | Link |
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| JP (1) | JP2578283B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0695732A2 (en) | 1994-08-02 | 1996-02-07 | Sumitomo Electric Industries, Ltd. | Metallized ceramic substrate having smooth plating layer and method for producing the same |
| JP2001097793A (en) * | 1999-09-29 | 2001-04-10 | Toshiba Corp | Aluminum nitride base substrate and its production |
| KR100285789B1 (en) * | 1998-06-22 | 2001-04-16 | 민흥식 | Metallizing metal paste composition |
| JP2006299307A (en) * | 2005-04-18 | 2006-11-02 | Mitsubishi Materials Corp | Sputtering target for forming protective film of optical recording medium |
| KR100747160B1 (en) * | 2001-10-05 | 2007-08-07 | 엔지케이 스파크 플러그 캄파니 리미티드 | Process for producing ceramic member for bonding, ceramic member for bonding, vacuum switch, and vacuum vessel |
| JP2008150285A (en) * | 2007-12-26 | 2008-07-03 | Ngk Spark Plug Co Ltd | Method for producing ceramic member to be joined, ceramic member to be joined, vacuum switch and vacuum vessel |
| CN103189975A (en) * | 2010-11-01 | 2013-07-03 | 日铁住金电设备株式会社 | Package for storing electronic component elements |
-
1992
- 1992-02-27 JP JP4040814A patent/JP2578283B2/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0695732A2 (en) | 1994-08-02 | 1996-02-07 | Sumitomo Electric Industries, Ltd. | Metallized ceramic substrate having smooth plating layer and method for producing the same |
| US5679469A (en) * | 1994-08-02 | 1997-10-21 | Sumitomo Electric Industries, Ltd. | Metallized ceramic substrate having smooth plating layer and method for producing the same |
| KR100285789B1 (en) * | 1998-06-22 | 2001-04-16 | 민흥식 | Metallizing metal paste composition |
| JP2001097793A (en) * | 1999-09-29 | 2001-04-10 | Toshiba Corp | Aluminum nitride base substrate and its production |
| JP4653272B2 (en) * | 1999-09-29 | 2011-03-16 | 株式会社東芝 | Method for manufacturing aluminum nitride substrate |
| KR100747160B1 (en) * | 2001-10-05 | 2007-08-07 | 엔지케이 스파크 플러그 캄파니 리미티드 | Process for producing ceramic member for bonding, ceramic member for bonding, vacuum switch, and vacuum vessel |
| JP2006299307A (en) * | 2005-04-18 | 2006-11-02 | Mitsubishi Materials Corp | Sputtering target for forming protective film of optical recording medium |
| JP4697404B2 (en) * | 2005-04-18 | 2011-06-08 | 三菱マテリアル株式会社 | Sputtering target for forming an optical recording medium protective film |
| JP2008150285A (en) * | 2007-12-26 | 2008-07-03 | Ngk Spark Plug Co Ltd | Method for producing ceramic member to be joined, ceramic member to be joined, vacuum switch and vacuum vessel |
| JP4659812B2 (en) * | 2007-12-26 | 2011-03-30 | 日本特殊陶業株式会社 | Method of manufacturing ceramic member for bonding, ceramic member for bonding, vacuum switch, and vacuum vessel |
| CN103189975A (en) * | 2010-11-01 | 2013-07-03 | 日铁住金电设备株式会社 | Package for storing electronic component elements |
| US9119297B2 (en) | 2010-11-01 | 2015-08-25 | Nippon Steel & Sumikin Electronics Devices Inc. | Electronic component element housing package |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2578283B2 (en) | 1997-02-05 |
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