JP3538549B2 - Wiring board and method of manufacturing the same - Google Patents
Wiring board and method of manufacturing the sameInfo
- Publication number
- JP3538549B2 JP3538549B2 JP24536098A JP24536098A JP3538549B2 JP 3538549 B2 JP3538549 B2 JP 3538549B2 JP 24536098 A JP24536098 A JP 24536098A JP 24536098 A JP24536098 A JP 24536098A JP 3538549 B2 JP3538549 B2 JP 3538549B2
- Authority
- JP
- Japan
- Prior art keywords
- volume
- wiring layer
- insulating substrate
- wiring board
- aluminum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、酸化アルミニウム
を主体とするセラミックスを絶縁基板とする配線基板に
関し、詳細には低抵抗導体からなり、且つ絶縁基板と同
時焼成によって形成された表面配線層を具備し、接続端
子、ヒートシンクなどの金具をロウ付け可能な配線基板
とその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring substrate having an insulating substrate made of ceramics mainly composed of aluminum oxide, and more particularly, to a surface wiring layer made of a low-resistance conductor and formed by co-firing with the insulating substrate. The present invention relates to a wiring board provided with a metal fitting such as a connection terminal and a heat sink and capable of being brazed, and a method of manufacturing the same.
【０００２】[0002]
【従来技術】近年、半導体素子の高集積化に伴い、半導
体装置から発生する熱も増加している。半導体装置の誤
動作をなくすためには、このような熱を装置外に放出可
能な配線基板が必要とされている。一方、電気的な特性
としては、演算速度の高速化により、信号の遅延が問題
となり、導体損失の小さい、つまり低抵抗の導体を用い
ることが要求されてきた。2. Description of the Related Art In recent years, heat generated by a semiconductor device has been increasing along with high integration of semiconductor elements. In order to eliminate malfunction of the semiconductor device, a wiring board capable of releasing such heat to the outside of the device is required. On the other hand, as for the electrical characteristics, a delay in signal has become a problem due to an increase in operation speed, and it has been required to use a conductor having a small conductor loss, that is, a low-resistance conductor.
【０００３】このような半導体素子を搭載した配線基板
としては、その信頼性の点から、アルミナセラミックス
を絶縁基板とし、その表面あるいは内部にタングステン
やモリブデンなどの高融点金属からなる配線層を被着形
成したセラミック配線基板が多用されている。ところ
が、従来から多用されている高融点金属からなる配線層
では、抵抗を高々１０ｍΩ／□程度までしか低くできな
かった。[0003] As a wiring board on which such a semiconductor element is mounted, from the viewpoint of reliability, an alumina ceramic is used as an insulating substrate, and a wiring layer made of a refractory metal such as tungsten or molybdenum is deposited on the surface or inside thereof. The formed ceramic wiring board is frequently used. However, in a wiring layer made of a high melting point metal that has been widely used, the resistance can be reduced only to about 10 mΩ / □ at most.
【０００４】これに対して、近年に至り、低抵抗導体で
ある銅や銀と同時焼成可能な、いわゆるガラスセラミッ
クスを用いた多層配線基板が提案されている。ところ
が、ガラスセラミックスの熱伝導率は高々数Ｗ／ｍ・Ｋ
しかなく、前記熱的問題を解決することが難しくなって
きている。On the other hand, in recent years, a multilayer wiring board using so-called glass ceramics which can be co-fired with copper or silver which is a low-resistance conductor has been proposed. However, the thermal conductivity of glass ceramics is at most several W / m · K.
However, it has become difficult to solve the thermal problem.
【０００５】そこで、この熱的問題点と、電気的問題点
を同時に解決する方法として、酸化アルミニウムセラミ
ックスからなる絶縁基板に対して、銅、または銅とタン
グステンまたはモリブデンを組み合わせた配線層を同時
焼成により形成する方法が、特開平８−８５０２号、特
開平７−１５１０１号、特許第２６６６７４４号に提案
されている。In order to solve the thermal problem and the electrical problem at the same time, as a method for simultaneously solving the above problems, a wiring layer made of copper or a combination of copper and tungsten or molybdenum is simultaneously fired on an insulating substrate made of aluminum oxide ceramics. Have been proposed in Japanese Patent Application Laid-Open Nos. 8-8502, 7-15101, and 2666744.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
酸化アルミニウム（アルミナ）セラミックスからなる絶
縁基板に対して、導体成分として銅を含有する配線層を
形成した配線基板においては、銅とアルミナセラミック
スとの熱膨張差が大きいために、銅含有配線層の絶縁基
板への密着性が小さいものであった。However, in contrast to a conventional insulating substrate made of aluminum oxide (alumina) ceramic, a wiring board having a wiring layer containing copper as a conductor component is different from a conventional insulating substrate made of aluminum oxide (alumina) ceramic. Due to the large difference in thermal expansion, the adhesion of the copper-containing wiring layer to the insulating substrate was small.
【０００７】そのため、例えば、絶縁基板表面に形成さ
れた表面配線層に対して、各種電子部品を実装した場合
に表面配線層が絶縁基板から剥離して電子部品の実装信
頼性が損なわれたり、特に、接続端子などの金具を表面
配線層にロウ付けしても、金具が容易に外れるなどの問
題があった。Therefore, for example, when various electronic components are mounted on the surface wiring layer formed on the surface of the insulating substrate, the surface wiring layer peels off from the insulating substrate, and the mounting reliability of the electronic component is impaired. In particular, there has been a problem that the metal fittings such as connection terminals are easily detached even if they are brazed to the surface wiring layer.
【０００８】従って、本発明は、酸化アルミニウムセラ
ミックスからなる絶縁基板と同時焼成によって形成さ
れ、銅を含み、且つ金具などのロウ付けにおいても優れ
た接着強度を付与することのできる低抵抗の表面配線層
を具備した配線基板とその製造方法を提供することを目
的とする。Accordingly, the present invention provides a low-resistance surface wiring formed by simultaneous sintering with an insulating substrate made of aluminum oxide ceramic, containing copper, and capable of imparting excellent adhesive strength even when brazing metal fittings or the like. It is an object of the present invention to provide a wiring board having a layer and a method for manufacturing the same.
【０００９】[0009]
【課題を解決するための手段】本発明者等は、上記課題
に対して検討を重ねた結果、アルミナセラミックスを絶
縁基板とする配線基板において、表面配線層形成成分と
して、銅、タングステンおよび／またはモリブデンに加
え、Ｔｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉの群から
選ばれる少なくとも１種を適量含有せしめることによ
り、表面配線層の絶縁基板への密着強度を高めることが
できる結果、金具のロウ付けはもとより、各種電子部品
の実装においても優れた信頼性を有する配線基板を提供
できることを見いだした。Means for Solving the Problems As a result of repeated studies on the above problems, the present inventors have found that copper, tungsten and / or copper as a component for forming a surface wiring layer in a wiring substrate using alumina ceramics as an insulating substrate. In addition to molybdenum, from the group of Ti, Cr, Mn, Fe, Co and Ni
By including at least one selected amount in an appropriate amount, the adhesion strength of the surface wiring layer to the insulating substrate can be increased, and as a result, wiring having excellent reliability not only in brazing metal fittings but also in mounting various electronic components. We found that we could provide a substrate.
【００１０】即ち、本発明の配線基板は、酸化アルミニ
ウムを主成分とする相対密度９５％以上のセラミックス
からなる絶縁基板と、該絶縁基板の少なくとも表面に該
絶縁基板との同時焼成によって形成され、銅（Ｃｕ）を
１０〜７０体積％、タングステン（Ｗ）及び／またはモ
リブデン（Ｍｏ）を３０〜９０体積％からなる主導体成
分１００体積部に対して、Ｔｉ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃ
ｏおよびＮｉの群から選ばれる少なくとも１種を金属換
算で０．０１〜５体積部の割合で含有し、かつ銅からな
るマトリックス中に少なくともタングステン及び／また
はモリブデンの粒子が分散含有してなる表面配線層を具
備してなることを特徴とするものである。That is, the wiring board of the present invention is formed by simultaneously firing an insulating substrate made of ceramics containing aluminum oxide as a main component and having a relative density of 95% or more and at least the surface of the insulating substrate. With respect to 100 parts by volume of the main conductor component composed of 10 to 70% by volume of copper (Cu) and 30 to 90% by volume of tungsten (W) and / or molybdenum (Mo), Ti, Cr, Mn, Fe, C
a surface containing at least one selected from the group consisting of o and Ni in a ratio of 0.01 to 5 parts by volume in terms of metal, and having at least tungsten and / or molybdenum particles dispersed and contained in a matrix made of copper; It is characterized by comprising a wiring layer.
【００１１】また、本発明の配線基板の製造方法によれ
ば、酸化アルミニウムを主成分とするセラミック成分を
含有するグリーンシートの表面に、銅（Ｃｕ）含有粉末
を金属換算で１０〜７０体積％、タングステン（Ｗ）及
び／またはモリブデン（Ｍｏ）含有粉末を金属換算で３
０〜９０体積％からなる主導体成分１００体積部に対し
て、Ｔｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉの群から
選ばれる少なくとも１種の含有粉末を金属換算で０．０
１〜５体積部の割合で含有してなる導体ペーストを回路
パターン状に印刷塗布した後、該グリーンシートを積層
し、１２００〜１５００℃の非酸化性雰囲気中で焼成し
て、相対密度９５％以上の酸化アルミニウムセラミック
スからなる絶縁基板表面に表面配線層を形成することを
特徴とするものである。Further, according to the method of manufacturing a wiring board of the present invention, copper (Cu) -containing powder is coated on the surface of a green sheet containing a ceramic component containing aluminum oxide as a main component in an amount of 10 to 70% by volume in terms of metal. , Tungsten (W) and / or molybdenum (Mo) containing powder in metal conversion
For 100 parts by volume of the main conductor component consisting of 0 to 90% by volume, from the group of Ti, Cr, Mn, Fe, Co and Ni
The selected at least one kind of contained powder is 0.0
After printing and applying a conductor paste containing 1 to 5 parts by volume in a circuit pattern, the green sheets are laminated and fired in a non-oxidizing atmosphere at 1200 to 1500 ° C. to obtain a relative density of 95%. A surface wiring layer is formed on the surface of the insulating substrate made of the above aluminum oxide ceramic.
【００１２】なお、上記配線基板およびその製造方法に
おいては、表面配線層のシート抵抗が８ｍΩ／□以下で
あること、前記表面配線層に対して金具がロウ付けされ
てなること、また、前記酸化アルミニウムセラミックス
には、マンガン化合物をＭｎＯ２換算で２．０〜６．０
重量％の割合で含有していることが望ましい。The above-mentioned wiring board and its manufacturing method
When the sheet resistance of the surface wiring layer is 8 mΩ / □ or less,
A metal fitting is brazed to the surface wiring layer, and a manganese compound is added to the aluminum oxide ceramic in an amount of 2.0 to 6.0 in terms of MnO 2.
It is desirable to contain it in a proportion of weight%.
【００１３】[0013]
【発明の実施の形態】以下に、本発明の配線基板の一実
施態様を示す概略断面図を基に説明する。図１の配線基
板は、酸化物セラミックスからなる複数の絶縁層１ａ，
１ｂ、１ｃが積層された絶縁基板１の表面に表面配線層
２ａと、絶縁層１ａ，１ｂ，１ｃ間に内部配線層２ｂが
設けられている。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic sectional view showing an embodiment of a wiring board according to the present invention. The wiring board of FIG. 1 has a plurality of insulating layers 1a made of oxide ceramics.
A surface wiring layer 2a is provided on the surface of an insulating substrate 1 on which 1b and 1c are laminated, and an internal wiring layer 2b is provided between the insulating layers 1a, 1b and 1c.
【００１４】本発明によれば、上記表面配線層２ａおよ
び内部配線層２ｂを、少なくとも銅とタングステン
（Ｗ）および／またはモリブデン（Ｍｏ）とを含有する
の複合材料を主成分とする導体によって形成したもので
あり、この内部配線層２ｂおよび表面配線層２ａは、絶
縁基板１と同時焼成によって形成されたものである。According to the present invention, the surface wiring layer 2a and the internal wiring layer 2b are formed of a conductor mainly composed of a composite material containing at least copper and tungsten (W) and / or molybdenum (Mo). The internal wiring layer 2b and the surface wiring layer 2a are formed by simultaneous firing with the insulating substrate 1.
【００１５】また、各層の配線層間は、絶縁層を貫通す
るように形成されたビアホール導体３によって電気的に
接続される。このビアホール導体３も表面配線層２ａや
内部配線層２ｂと同様な導体材料によって同時焼成によ
って形成されることが望ましい。The wiring layers of each layer are electrically connected by a via-hole conductor 3 formed so as to penetrate the insulating layer. It is desirable that the via hole conductor 3 is also formed by simultaneous firing using the same conductive material as the surface wiring layer 2a and the internal wiring layer 2b.
【００１６】（絶縁基板）本発明において、絶縁基板１
は、酸化アルミニウムを主体とするものであるが、絶縁
基板の熱伝導性、高強度化、さらには表面配線層の密着
性を高める上で相対密度９５％以上、特に９７％、さら
には９８％以上の高緻密体から構成されることが望まし
く、さらに熱伝導率は１０Ｗ／ｍ・Ｋ以上、特に１５Ｗ
／ｍ・Ｋ以上、さらには１７Ｗ／ｍ・Ｋ以上であること
が望ましい。(Insulating Substrate) In the present invention, the insulating substrate 1
Is mainly composed of aluminum oxide, but has a relative density of 95% or more, particularly 97%, and more preferably 98% in order to increase the thermal conductivity and strength of the insulating substrate and further enhance the adhesion of the surface wiring layer. It is desirable to be composed of the above high-density body, and the thermal conductivity is 10 W / m · K or more, especially 15 W
/ M · K or more, more preferably 17 W / m · K or more.
【００１７】本発明では、表面配線層２ａ及び内部配線
層２ｂとの同時焼結時による保形性を達成する上で１２
００〜１５００℃の低温で焼成することが必要となる
が、本発明によれば、このような低温での焼成において
も相対密度９５％以上に緻密化することが必要となる。According to the present invention, in order to achieve shape retention by simultaneous sintering with the surface wiring layer 2a and the internal wiring layer 2b, 12
Although it is necessary to fire at a low temperature of 00 to 1500 ° C., according to the present invention, it is necessary to densify to a relative density of 95% or more even in firing at such a low temperature.
【００１８】かかる観点から、本発明における絶縁基板
１は、酸化アルミニウムを主成分とするもの、具体的に
は酸化アルミニウムを９０重量％以上の割合で含有する
ものであるが、第２の成分として、Ｍｎ化合物をＭｎＯ
2 換算で２．０〜６．０重量％の割合で含有することが
望ましい。即ち、Ｍｎ化合物量が２．０重量％よりも少
ないと、１２００〜１５００℃での緻密化が達成されに
くく、また６．０重量％よりも多いと絶縁基板１の絶縁
性が低下する。Ｍｎ化合物の最適な範囲は、ＭｎＯ2 換
算で３〜５重量％である。From this viewpoint, the insulating substrate 1 of the present invention contains aluminum oxide as a main component, specifically, contains aluminum oxide in a proportion of 90% by weight or more. , The Mn compound is MnO
It is desirable to contain it in a ratio of 2.0 to 6.0% by weight in terms of two . That is, if the amount of the Mn compound is less than 2.0% by weight, it is difficult to achieve densification at 1200 to 1500 ° C., and if it is more than 6.0% by weight, the insulating property of the insulating substrate 1 decreases. Optimal range of the Mn compound is 3-5 wt% at MnO 2 basis.
【００１９】また、この絶縁基板１中には、第３の成分
として、ＳｉＯ2 およびＭｇＯ、ＣａＯ、ＳｒＯ等のア
ルカリ土類元素酸化物を銅含有導体との同時焼結性を高
める上で合計で０．４〜８重量％の割合で含有せしめる
ことが望ましい。Further, in the insulating substrate 1, SiO 2 and alkaline earth element oxides such as MgO, CaO, and SrO are added as a third component in order to enhance the simultaneous sintering property with the copper-containing conductor. At a ratio of 0.4 to 8% by weight.
【００２０】さらに第４の成分としてＷ、Ｍｏなどを着
色成分として２重量％以下の割合で含んでもよい。Further, W, Mo or the like may be contained as a fourth component in a proportion of 2% by weight or less as a coloring component.
【００２１】上記酸化アルミニウム以外の成分は、酸化
アルミニウム主結晶相の粒界に非晶質相あるいは結晶相
として存在するが、熱伝導性を高める上で粒界中に助剤
成分を含有する結晶相が形成されていることが望まし
い。The above-mentioned components other than aluminum oxide exist as an amorphous phase or a crystal phase at the grain boundaries of the main crystal phase of aluminum oxide. However, in order to enhance the thermal conductivity, a crystal containing an auxiliary component in the grain boundaries is required. Desirably, a phase is formed.
【００２２】また、絶縁基板１を形成する酸化アルミニ
ウム主結晶相は、粒状または柱状の結晶として存在する
が、これら主結晶相の平均結晶粒径は、１．５〜５．０
μｍであることが望ましい。なお、主結晶相が柱状結晶
からなる場合、上記平均結晶粒径は、短軸径に基づくも
のである。この主結晶相の平均結晶粒径が１．５μｍよ
りも小さいと高熱伝導化が難しく、平均粒径が５．０μ
ｍよりも大きいと基板材料として要求される十分な強度
が得られにくくなるためである。The aluminum oxide main crystal phase forming the insulating substrate 1 exists as granular or columnar crystals, and the average crystal grain size of these main crystal phases is 1.5 to 5.0.
μm is desirable. When the main crystal phase is composed of columnar crystals, the average crystal grain size is based on the minor axis diameter. If the average crystal grain size of the main crystal phase is smaller than 1.5 μm, it is difficult to achieve high thermal conductivity, and the average grain size is 5.0 μm.
If it is larger than m, it is difficult to obtain sufficient strength required as a substrate material.
【００２３】（配線層）一方、表面配線層２ａおよび内
部配線層２ｂは、銅、Ｗおよび／またはＭｏに加え、Ｔ
ｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉの群から選ばれ
る少なくとも１種を必須の成分として含有することが、
少なくとも表面配線層２ａの絶縁基板１への密着性を高
めるとともに、配線層の低抵抗化と、上記絶縁基板１と
の同時焼結性を達成するとともに、表面配線層の同時焼
成後の保形性を維持する上で必要である。(Wiring Layer) On the other hand, the surface wiring layer 2a and the internal wiring layer 2b are made of T , in addition to copper, W and / or Mo.
selected from the group consisting of i, Cr, Mn, Fe, Co and Ni
Containing at least one as an essential component,
In addition to increasing the adhesion of at least the surface wiring layer 2a to the insulating substrate 1, reducing the resistance of the wiring layer and achieving simultaneous sinterability with the insulating substrate 1, the shape retention after the simultaneous firing of the surface wiring layer It is necessary to maintain sex.
【００２４】具体的な組成比は、銅を１０〜７０体積
％、特に４０〜６０体積％、Ｗ及び／またはＭｏを３０
〜９０体積％、特に４０〜６０体積％からなる主導体成
分１００体積部に対して、Ｔｉ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃ
ｏおよびＮｉの群から選ばれる少なくとも１種を金属換
算で０．０１〜５体積部、特に０．１〜３体積部の割合
で含有しすることが必要である。The specific composition ratio is such that copper is 10 to 70% by volume, particularly 40 to 60% by volume, and W and / or Mo is 30% by volume.
Ti, Cr, Mn, Fe, C with respect to 100 parts by volume of the main conductor component consisting of 90 to 90% by volume, particularly 40 to 60% by volume.
It is necessary to contain at least one selected from the group consisting of o and Ni at a ratio of 0.01 to 5 parts by volume, particularly 0.1 to 3 parts by volume in terms of metal.
【００２５】各成分の比率を上記に限定したのは、主導
体成分において、銅が１０体積％よりも少なく、ＷやＭ
ｏ量が９０体積％よりも多いと、配線層の抵抗が８ｍΩ
／□よりも高くなり、銅が７０体積％よりも多く、Ｗや
Ｍｏ量が３０体積％よりも少ないと、表面配線層の同時
焼成後の保形性が低下し、表面配線層２ａにおいてにじ
みなどが発生したり、溶融した銅によって表面配線層が
凝集して断線が生じるとともに、絶縁基板と配線層の熱
膨張係数差により配線層の剥離が発生するためである。
また、Ｔｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉの群か
ら選ばれる少なくとも１種が０．０１体積部よりも少な
いと、表面配線層の絶縁基板への密着強度が十分でな
く、５体積部よりも多いと、配線層の抵抗が高くなり、
シート抵抗８ｍΩ／□以下が達成できないためである。The reason why the ratio of each component is limited to the above is that copper is less than 10% by volume and W and M
When the amount of o is more than 90% by volume, the resistance of the wiring layer is 8 mΩ.
If it is higher than / □, the content of copper is more than 70% by volume, and the content of W or Mo is less than 30% by volume, the shape retention after the simultaneous firing of the surface wiring layer is reduced, and the surface wiring layer 2a is blurred. This is because, for example, the surface wiring layer is aggregated by the molten copper, and the wiring is disconnected due to the thermal expansion coefficient difference between the insulating substrate and the wiring layer.
Also, the group of Ti, Cr, Mn, Fe, Co and Ni
If at least one selected from the group is less than 0.01 part by volume, the adhesion strength of the surface wiring layer to the insulating substrate is not sufficient, and if it is more than 5 parts by volume, the resistance of the wiring layer increases,
This is because a sheet resistance of 8 mΩ / □ or less cannot be achieved.
【００２６】また、本発明においては、前記Ｗ及び／ま
たはＭｏは、平均粒径１〜１０μｍの球状あるいは数個
の粒子による焼結粒子として銅からなるマトリックス中
に分散含有していることが望ましい。これは、上記平均
粒径が１．０μｍよりも小さい場合、表面配線層２ａの
保形性が悪くなるとともに組織が多孔質化し配線層の抵
抗も高くなり、１０μｍを越えると銅のマトリックスが
ＷやＭｏの粒子によって分断されてしまい配線層の抵抗
が高くなったり、銅成分が分離してにじみなどが発生し
やすくなるためである。Ｗ及び／またはＭｏは平均粒径
１．３〜５μｍ、特に１．３〜３μｍの大きさで分散さ
れていることが最も望ましい。In the present invention, it is desirable that the W and / or Mo are dispersed and contained in a matrix made of copper as spherical or sintered particles of several particles having an average particle diameter of 1 to 10 μm. . When the average particle size is smaller than 1.0 μm, the shape retention of the surface wiring layer 2a is deteriorated, the structure becomes porous and the resistance of the wiring layer increases, and when the average particle size exceeds 10 μm, the copper matrix becomes W This is because the resistance of the wiring layer is increased by being separated by the particles of Mo or Mo, and the copper component is separated to easily cause bleeding. Most preferably, W and / or Mo are dispersed with a mean particle size of 1.3 to 5 μm, particularly 1.3 to 3 μm.
【００２７】また、Ｗ、Ｍｏ以外の遷移金属としては、
具体的には、Ｔｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉ
の群から選ばれる少なくとも１種が好適に用いられ、こ
れらの中でも特にＴｉ、Ｃｒ、ＣｏおよびＮｉの群から
選ばれる少なくとも１種が望ましい。この遷移金属は、
配線層中において、金属、あるいは酸化物、窒化物など
の金属化合物として存在し、銅からなるマトリックス中
にＷやＭｏと同様に分散粒子として存在するが、平均粒
径が１０μｍ以下、特に３μｍ以下の粒子として存在す
ることが望ましい。平均粒径が１０μｍよりも大きい
と、前記Ｗ及び／又はＭｏの粒子とともに、銅のマトリ
ックスを分断して配線層の抵抗が高くなったり、銅成分
が分離してにじみなどが発生しやすくなるためである。The transition metals other than W and Mo include:
Specifically, Ti, Cr, Mn, Fe, Co and Ni
And at least one selected from the group consisting of Ti, Cr 2 , Co and Ni is particularly desirable. This transition metal is
In the wiring layer, it exists as a metal or a metal compound such as an oxide or a nitride, and exists as dispersed particles like W or Mo in a matrix made of copper, but has an average particle diameter of 10 μm or less, particularly 3 μm or less. Is desirably present as particles. When the average particle size is larger than 10 μm, the resistance of the wiring layer is increased by dividing the copper matrix together with the W and / or Mo particles, or the copper component is separated to easily cause bleeding. It is.
【００２８】また、上記表面配線層２ａおよび内部配線
層２ｂ中には、絶縁基板１との密着性を改善するため
に、前記主導体成分１００体積部に対して、酸化アルミ
ニウム、または絶縁基板と同じ成分のセラミックスを
０．０５〜２体積部、特に０．１〜１体積部の割合で含
有することも可能である。なお、このセラミック成分量
が２体積部よりも多いと、配線層の抵抗が極端に増大す
る。In order to improve the adhesion to the insulating substrate 1, aluminum oxide or an insulating substrate is added to the main conductor component 100 volume parts in the surface wiring layer 2 a and the internal wiring layer 2 b. It is also possible to contain ceramics of the same component in a ratio of 0.05 to 2 parts by volume, particularly 0.1 to 1 part by volume. If the amount of the ceramic component is more than 2 parts by volume, the resistance of the wiring layer increases extremely.
【００２９】さらに、本発明の配線基板においては、表
面配線層２ａや内部配線層２ｂ中の銅成分の絶縁基板１
への拡散距離ｘが２０μｍ以下、特に１０μｍ以下であ
ることが望ましい。これは、銅のセラミックス中への拡
散距離が２０μｍを超えると、配線層間の絶縁性が低下
し、配線基板としての信頼性が低下するためである。こ
の銅の拡散距離を２０μｍ以下とすることにより、同一
平面内に形成された配線層間の最小線間距離を１００μ
ｍ以下の高密度配線化を図ることができ、同様に１つの
絶縁層内に複数のビアホール導体が形成される場合、そ
のビアホール導体３間の最小離間距離も上記と同様な理
由から１００μｍ以下に小さくすることができる。Further, in the wiring board according to the present invention, the insulating substrate 1 of the copper component in the surface wiring layer 2a and the internal wiring layer 2b is provided.
It is desirable that the diffusion distance x to the substrate be 20 μm or less, particularly 10 μm or less. This is because if the diffusion distance of copper into the ceramic exceeds 20 μm, the insulation between the wiring layers decreases, and the reliability as a wiring substrate decreases. By setting the copper diffusion distance to 20 μm or less, the minimum distance between wiring layers formed on the same plane can be reduced to 100 μm.
m, and when a plurality of via-hole conductors are formed in one insulating layer, the minimum distance between the via-hole conductors 3 is also reduced to 100 μm or less for the same reason as described above. Can be smaller.
【００３０】（金具取付け）本発明においては、図１に
示すように、表面配線層２ａに対して、Ｆｅ−Ｎｉ−Ｃ
ｏ、Ｃｕ、Ｃｕ−Ｗなどの接続端子やヒートシンクなど
の金具を取り付けることができる。金具を取り付ける方
法としては、表面配線層２ａの表面に、厚さ１．５〜５
μｍのＮｉ、Ａｕのメッキ層４を形成した後、Ａｇ−Ｃ
ｕ、Ａｕ−Ｓｎ、Ａｇ−Ｃｕ−Ｔｉなどのロウ材５にて
金具６を接合する。なお、Ａｇ−Ｃｕ系ロウ材を使用す
る際は、表面配線層２ａとの反応性があるために、Ｎｉ
メッキの厚みを１μｍ以上に厚くすることで表面配線層
を保護する必要がある。(Mounting of metal fittings) In the present invention, as shown in FIG.
A connection terminal such as o, Cu, Cu-W or a metal fitting such as a heat sink can be attached. As a method of attaching the metal fitting, a thickness of 1.5 to 5 mm is formed on the surface of the surface wiring layer 2a.
After forming a plating layer 4 of Ni and Au having a thickness of μm, Ag-C
The metal fitting 6 is joined with a brazing material 5 such as u, Au-Sn, or Ag-Cu-Ti. When an Ag—Cu-based brazing material is used, it has a reactivity with the surface wiring layer 2a.
It is necessary to protect the surface wiring layer by increasing the plating thickness to 1 μm or more.
【００３１】（製造方法）次に、本発明の配線基板の製
造方法について具体的に説明する。まず、絶縁基板を形
成するために、酸化物セラミックスの主成分となる酸化
アルミニウム原料粉末として、平均粒径が０．５〜２．
５μｍ、特に０．５〜２．０μｍの粉末を用いる。これ
は、平均粒径は０．５μｍよりも小さいと、粉末の取扱
いが難しく、また粉末のコストが高くなり、２．５μｍ
よりも高いと、１５００℃以下の温度で焼成することが
難しくなるためである。(Manufacturing Method) Next, a method of manufacturing a wiring board according to the present invention will be specifically described. First, in order to form an insulating substrate, an aluminum oxide raw material powder which is a main component of oxide ceramics has an average particle size of 0.5 to 2.
5 μm, especially 0.5-2.0 μm powder is used. If the average particle size is smaller than 0.5 μm, it is difficult to handle the powder, and the cost of the powder is increased.
If the temperature is higher than 1,500 ° C. or less, it is difficult to fire.
【００３２】そして、上記酸化アルミニウム粉末に対し
て、適宜、低温焼結性を高めるために、第２の成分とし
て、ＭｎＯ2 を２．０〜６．０重量％、特に３．０〜
５．０重量％、第３の成分として、ＳｉＯ2 、ＭｇＯ、
ＣａＯ粉末等を０．４〜８重量％の割合で、さらに第４
の成分として、Ｗ、Ｍｏなどの金属粉末や酸化物粉末を
金属換算で２重量％以下の割合で添加する。なお、上記
酸化物の添加に当たっては、酸化物粉末以外に、焼成に
よって酸化物を形成し得る炭酸塩、硝酸塩、酢酸塩など
として添加してもよい。In order to improve the low-temperature sintering property of the aluminum oxide powder, MnO 2 is added as a second component in an amount of 2.0 to 6.0% by weight, particularly 3.0 to 3.0% by weight.
5.0% by weight, as the third component, SiO 2 , MgO,
CaO powder or the like at a ratio of 0.4 to 8% by weight,
, A metal powder such as W or Mo or an oxide powder is added at a ratio of 2% by weight or less in terms of metal. In addition, in addition to the oxide powder, the above oxide may be added as a carbonate, nitrate, acetate, or the like capable of forming an oxide by firing.
【００３３】そして、この混合粉末を用いて絶縁層を形
成するためのシート状成形体を作製する。シート状成形
体は、周知の成形方法によって作製することができる。
例えば、上記混合粉末に有機バインダーや溶媒を添加し
てスラリーを調製した後、ドクターブレード法によって
形成したり、混合粉末に有機バインダーを加え、プレス
成形、圧延成形等により所定の厚みのシート状成形体を
作製できる。Then, a sheet-like molded body for forming an insulating layer is prepared using the mixed powder. The sheet-shaped molded body can be produced by a well-known molding method.
For example, a slurry is prepared by adding an organic binder or a solvent to the mixed powder, and then formed by a doctor blade method, or an organic binder is added to the mixed powder, and press-formed, roll-formed, or the like to form a sheet having a predetermined thickness. Body can be made.
【００３４】このようにして作製したシート状成形体に
対して、導体成分として、銅（Ｃｕ）含有粉末が金属換
算で１０〜７０体積％、特に４０〜６０体積％、タング
ステン（Ｗ）及び／またはモリブデン（Ｍｏ）含有粉末
が金属換算で３０〜９０体積％、特に４０〜６０体積％
からなる主導体成分１００体積部に対して、Ｔｉ、Ｃ
ｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉの群から選ばれる少な
くとも１種の含有粉末を金属換算で０．０１〜５体積
部、特に０．１〜３体積部の割合で含有してなる導体ペ
ーストを調製し、このペーストを各シート状絶縁層にス
クリーン印刷、グラビア印刷等の手法によって印刷塗布
する。この導体ペースト中には、絶縁層との密着性を高
めるために、前記主導体成分１００体積部に対して、酸
化アルミニウム粉末や、絶縁層を形成する酸化物セラミ
ックス成分と同一の組成物粉末を０．０５〜２体積部、
特に０．１〜１体積部の割合で添加することも可能であ
る。With respect to the sheet-like molded body thus produced, copper (Cu) -containing powder was used as a conductor component in an amount of 10 to 70% by volume, particularly 40 to 60% by volume, in terms of metal, and tungsten (W) and / or Alternatively, the content of molybdenum (Mo) -containing powder is 30 to 90% by volume, particularly 40 to 60% by volume in terms of metal.
Against main conductor component 100 parts by volume consisting of, Ti, C
r, Mn, Fe, Co and Ni
A conductor paste containing at least one kind of contained powder at a metal conversion rate of 0.01 to 5 parts by volume, particularly 0.1 to 3 parts by volume, is prepared, and this paste is screened on each sheet-like insulating layer. Printing and coating are performed by a method such as printing or gravure printing. In this conductor paste, aluminum oxide powder or the same composition powder as the oxide ceramic component forming the insulation layer was added to 100 parts by volume of the main conductor component in order to enhance the adhesion to the insulation layer. 0.05-2 volume parts,
In particular, it can be added at a ratio of 0.1 to 1 part by volume.
【００３５】ペーストに配合する銅含有粉末としては、
Ｃｕ粉末、酸化銅（ＣｕＯ、Ｃｕ2Ｏ）粉末、あるいは
それらの混合粉末、Ｗ及び／またはＭｏを含有する粉末
としては、Ｗ粉末、Ｍｏ粉末、それらの混合粉末、Ｔ
ｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉの群から選ばれ
る少なくとも１種を含む粉末としては、各金属粉末、酸
化物粉末、窒化物粉末、特に酸化物粉末が挙げられる。As the copper-containing powder to be mixed into the paste,
Examples of the Cu powder, copper oxide (CuO, Cu2O) powder, or a mixed powder thereof, and a powder containing W and / or Mo include W powder, Mo powder, a mixed powder thereof, and T powder.
selected from the group consisting of i, Cr, Mn, Fe, Co and Ni
Examples of the powder containing at least one kind include metal powders, oxide powders, nitride powders, and especially oxide powders.
【００３６】なお、ビアホール導体を形成する場合に
は、シート状成形体に対して、マイクロドリル、レーザ
ー等により直径が５０〜２５０μｍのビアホールを形成
した後、このビアホール内に上記銅含有導体ペーストを
充填する。In the case of forming a via-hole conductor, a via-hole having a diameter of 50 to 250 μm is formed in a sheet-like molded body by a microdrill, a laser, or the like, and then the copper-containing conductor paste is filled in the via-hole. Fill.
【００３７】その後、導体ペーストを印刷塗布したシー
ト状成形体を位置合わせして積層圧着した後、この積層
体を、この焼成を、非酸化性雰囲気中、焼成最高温度が
１２００〜１５００℃の温度となる条件で焼成する。Thereafter, the sheet-like molded body on which the conductive paste was applied by printing was aligned and laminated and pressed, and the laminated body was fired in a non-oxidizing atmosphere at a maximum firing temperature of 1200 to 1500 ° C. The firing is performed under the following conditions.
【００３８】この時の焼成温度が１２００℃より低い
と、通常の原料を用いた場合において、酸化アルミニウ
ム絶縁基板が相対密度９５％以上まで緻密化できず、熱
伝導性や強度が低下し、１５００℃よりも高いと、Ｗあ
るいはＭｏ自体の焼結が進み、銅との均一組織を維持で
きなく、強いては低抵抗を維持することが困難となりシ
ート抵抗８ｍΩ／□以下が得られなくなる。また、酸化
物セラミックスの主結晶相の粒径が大きくなり異常粒成
長が発生したり、銅がセラミックス中へ拡散するときの
パスである粒界の長さが短くなるとともに拡散速度も速
くなる結果、拡散距離を３０μｍ以下に抑制することが
困難となるためである。好適には、１２５０〜１４００
℃の範囲がよい。If the firing temperature at this time is lower than 1200 ° C., the aluminum oxide insulating substrate cannot be densified to a relative density of 95% or more when ordinary raw materials are used, and the thermal conductivity and strength are reduced, and If the temperature is higher than ℃, sintering of W or Mo itself proceeds, and it is not possible to maintain a uniform structure with copper, and if it is difficult to maintain a low resistance, a sheet resistance of 8 mΩ / □ or less cannot be obtained. In addition, the grain size of the main crystal phase of the oxide ceramics increases, abnormal grain growth occurs, and the diffusion speed increases as the length of the grain boundary, which is the path when copper diffuses into the ceramics, decreases. This is because it is difficult to suppress the diffusion distance to 30 μm or less. Preferably, 1250-1400
The range of ° C is good.
【００３９】また、この焼成時の非酸化性雰囲気として
は、窒素、あるいは窒素と水素との混合雰囲気であるこ
とが望ましいが、特に、配線層中の銅の拡散を抑制する
上では、水素及び窒素を含み露点＋１０℃以下、特に−
１０℃以下の非酸化性雰囲気であることが望ましい。な
お、この雰囲気には所望により、アルゴンガス等の不活
性ガスを混入してもよい。焼成時の露点が＋１０℃より
高いと、焼成中に酸化物セラミックスと雰囲気中の水分
とが反応し酸化膜を形成し、この酸化膜と銅含有導体の
銅が反応してしまい、導体の低抵抗化の妨げとなるのみ
でなく、銅の拡散を助長してしまうためである。As the non-oxidizing atmosphere at the time of this firing, it is preferable to use nitrogen or a mixed atmosphere of nitrogen and hydrogen. In particular, in order to suppress the diffusion of copper in the wiring layer, hydrogen and hydrogen are not used. Dew point + 10 ° C or less including nitrogen, especially-
It is desirable that the atmosphere be a non-oxidizing atmosphere of 10 ° C. or less. Note that an inert gas such as an argon gas may be mixed into this atmosphere, if desired. If the dew point during firing is higher than + 10 ° C., the oxide ceramic reacts with moisture in the atmosphere during firing to form an oxide film, and the oxide film reacts with copper of the copper-containing conductor, resulting in a low conductor. This not only hinders resistance but also promotes copper diffusion.
【００４０】なお、上記焼成温度及び雰囲気を制御して
焼成することによって、絶縁基板の表面の平均表面粗さ
Ｒａを１μｍ以下、特に０．７μｍ以下の平滑性に優れ
た表面を形成できる。By controlling the sintering temperature and atmosphere to perform sintering, a surface having an average surface roughness Ra of 1 μm or less, particularly 0.7 μm or less, which is excellent in smoothness, can be formed.
【００４１】更に、この配線基板に金具を取り付ける場
合には、表面配線層に対して、電解メッキ、無電解メッ
キ法によって１．５〜５μｍのＮｉ、Ａｕ等のメッキ膜
を形成する。望ましくは１〜３μｍのＮｉメッキ膜と
０．５〜２μｍのＡｕメッキ膜を順次施した後、Ａｇ−
Ｃｕ、Ａｕ−Ｓｎ、Ａｇ−Ｃｕ−Ｔｉなどのロウ材に
て、Ｆｅ−Ｎｉ−Ｃｏ、Ｃｕ、Ｃｕ−Ｗなどからなる金
具６を接合することができる。Further, when a metal fitting is attached to this wiring board, a plating film of 1.5 to 5 μm of Ni, Au or the like is formed on the surface wiring layer by electrolytic plating or electroless plating. Desirably, a Ni plating film having a thickness of 1 to 3 μm and an Au plating film having a thickness of 0.5 to 2 μm are sequentially formed.
The metal fitting 6 made of Fe-Ni-Co, Cu, Cu-W or the like can be joined by a brazing material such as Cu, Au-Sn, or Ag-Cu-Ti.
【００４２】[0042]
【実施例】実施例１
酸化アルミニウム粉末（平均粒径１．８μｍ）に対し
て、ＭｎＯ2 を表１、２に示すような割合で添加すると
ともに、ＳｉＯ2 を３重量％、ＭｇＯを０．５重量％の
割合で添加混合した後、さらに、成形用有機樹脂（バイ
ンダー）としてアクリル系バインダーと、トルエンを溶
媒として混合してスラリーを調製した後、ドクターブレ
ード法にて厚さ２５０μｍのシート状に成形した。そし
て、所定箇所にホール径１２０μｍのビアホールを形成
した。EXAMPLES Example 1 MnO 2 was added to aluminum oxide powder (average particle size 1.8 μm) at the ratios shown in Tables 1 and 2 , SiO 2 was 3% by weight, and MgO was 0.1%. After adding and mixing at a ratio of 5% by weight, an acrylic binder as an organic resin for molding (binder) and toluene as a solvent were mixed to prepare a slurry, and then a 250 μm thick sheet was formed by a doctor blade method. Molded. Then, a via hole having a hole diameter of 120 μm was formed at a predetermined location.
【００４３】次に、平均粒径が５μｍの銅粉末と、平均
粒径が０．８〜１２μｍのＷ粉末あるいはＭｏ粉末、平
均粒径が１μｍのＮｉＯ粉末、場合によっては平均粒径
が０．５μｍのＡｌ2 Ｏ3 粉末を表１、２に示す比率で
混合しアクリル系バインダーとをアセトンを溶媒として
導体ペーストを作製した。Next, copper powder having an average particle size of 5 μm, W powder or Mo powder having an average particle size of 0.8 to 12 μm, NiO powder having an average particle size of 1 μm, and in some cases, having an average particle size of 0.1 μm. 5 μm Al 2 O 3 powder was mixed at the ratios shown in Tables 1 and 2, and a conductive paste was prepared using an acrylic binder and acetone as a solvent.
【００４４】そして、シート状成形体上に上記導体ペー
ストを印刷塗布し、各シート状成形体のビアホール導体
にも上記配線層用導体ペーストを充填した。上記のよう
にして作製した各シート状成形体を位置合わせして積層
圧着して成形体積層体を作製した。その後、この成形体
積層体を実質的に水分を含まない酸素含有雰囲気中（Ｎ
2 ＋Ｏ2 または大気中）で脱脂を行った後、表１、２に
示した焼成温度にて、露点−１０℃の窒素水素混合雰囲
気にて焼成した。Then, the above-mentioned conductor paste was printed and applied on the sheet-like molded body, and the via-hole conductor of each sheet-like molded body was also filled with the above-mentioned conductor paste for wiring layer. Each sheet-like molded body produced as described above was aligned and laminated and pressed to produce a molded laminate. Thereafter, the molded body laminate is placed in an oxygen-containing atmosphere substantially free of moisture (N
(2 + O 2 or in the air), and then fired at a firing temperature shown in Tables 1 and 2 in a nitrogen-hydrogen mixed atmosphere at a dew point of −10 ° C.
【００４５】作製した配線基板における絶縁基板の相対
密度をアルキメデス法によって測定するとともに、レー
ザーフラッシュ法によって熱伝導率（厚さ３ｍｍ）およ
び体積固有抵抗を測定した。The relative density of the insulating substrate in the manufactured wiring substrate was measured by the Archimedes method, and the thermal conductivity (thickness: 3 mm) and the volume resistivity were measured by the laser flash method.
【００４６】また、配線基板の表面配線層に対して、配
線の導体抵抗、長さ、幅、厚みを測定した後、厚さ１５
μｍの導体に換算したシート抵抗（ｍΩ／□）を算出し
た。また、組織を走査型電子顕微鏡にて観察を行い、表
面配線層中のＷおよび／またはＭｏ粒子の粒径を測定し
た。また、配線基板を外観検査し、表面配線層のにじみ
の発生および表面配線層の剥離等の有無を観察した。結
果は、表３、４に示した。After measuring the conductor resistance, length, width and thickness of the wiring on the surface wiring layer of the wiring board,
The sheet resistance (mΩ / □) converted into a μm conductor was calculated. In addition, the structure was observed with a scanning electron microscope, and the particle size of W and / or Mo particles in the surface wiring layer was measured. Further, the appearance of the wiring board was inspected, and the occurrence of bleeding of the surface wiring layer and the presence or absence of peeling of the surface wiring layer were observed. The results are shown in Tables 3 and 4.
【００４７】さらに、２ｍｍ×２０ｍｍの表面配線層に
対して、２μｍのＮｉメッキ層、１μｍのＡｕメッキを
施した後、図２に示すように、Ｆｅ−Ｎｉ−Ｃｏ製のＬ
字型（リード）をＡｕ−Ｓｎからなるロウ材によってロ
ウ付けした後、この金具を垂直に引張、金具がはずれる
時の強度（ｋｇｆ）を測定した。Further, after a 2 μm Ni plating layer and a 1 μm Au plating were applied to a 2 mm × 20 mm surface wiring layer, as shown in FIG.
After the character (lead) was brazed with a brazing material made of Au-Sn, the metal fitting was pulled vertically, and the strength (kgf) when the metal fitting was removed was measured.
【００４８】[0048]
【表１】 [Table 1]
【００４９】[0049]
【表２】 [Table 2]
【００５０】[0050]
【表３】 [Table 3]
【００５１】[0051]
【表４】 [Table 4]
【００５２】表１〜表４に示すように、表面配線層中の
遷移金属量が０．０１体積部よりも少ない試料Ｎo.１、
３では、表面配線層の十分な接合強度が得られず、ま
た、Ａｌ2 Ｏ3 を５体積部添加した試料Ｎo.２では、接
合強度の向上は見られたが、配線層のシート抵抗が増加
した。また、遷移金属量が５体積％よりも多い試料Ｎo.
１３では、表面配線層のシート抵抗が８ｍΩ／□よりも
大きくなり、低抵抗の配線層を形成することができなか
った。As shown in Tables 1 to 4, Sample No. 1 in which the amount of transition metal in the surface wiring layer was less than 0.01 part by volume,
In Sample No. 3, sufficient bonding strength of the surface wiring layer was not obtained, and in Sample No. 2 in which 5 parts by volume of Al 2 O 3 was added, the bonding strength was improved, but the sheet resistance of the wiring layer was low. Increased. The sample No. having a transition metal content of more than 5% by volume.
In No. 13, the sheet resistance of the surface wiring layer was larger than 8 mΩ / □, and a low-resistance wiring layer could not be formed.
【００５３】また、ＭｎＯ2 量が少なく相対密度が９５
％に達していない試料Ｎo.１４では、熱伝導率が１０Ｗ
／ｍ・Ｋよりも低く、しかも表面配線層の接合強度も低
下した。さらに、表面配線層における銅含有量が１０体
積％よりも少ない試料Ｎo.２０、２１では、導体抵抗が
８ｍΩ／□よりも大きく、７０体積％よりも多い試料Ｎ
o.２８では、組織が不均一となりシート抵抗が８ｍΩ／
□よりも大きくなるとともに、配線の保形性が悪く、表
面配線層ににじみおよび一部に剥離も観察された。Further, the amount of MnO 2 is small and the relative density is 95%.
%, The thermal conductivity of the sample No.
/ M · K, and the bonding strength of the surface wiring layer also decreased. Further, in Samples Nos. 20 and 21 in which the copper content in the surface wiring layer is less than 10% by volume, the conductor resistance is higher than 8 mΩ / □ and more than 70% by volume.
In the case of o.28, the structure was uneven and the sheet resistance was 8 mΩ /
As well as larger than □, the shape retention of the wiring was poor, and bleeding on the surface wiring layer and peeling were partially observed.
【００５４】これらの比較例に対して、本発明の配線基
板は、シート抵抗が８ｍΩ／□以下の低抵抗を有すると
ともに絶縁基板に対して３ｋｇｆ以上の高い接合強度を
有する表面配線層を形成することができた。In contrast to these comparative examples, the wiring board of the present invention has a surface wiring layer having a low sheet resistance of 8 mΩ / □ or less and a high bonding strength of 3 kgf or more to the insulating substrate. I was able to.
【００５５】実施例２
酸化アルミニウム粉末（平均粒径１．８μｍ）に対し
て、ＭｎＯ2 を４重量％の割合で添加するとともに、Ｓ
ｉＯ2 を３重量％、ＭｇＯを０．５重量％の割合で添加
混合した後、さらに、成形用有機樹脂（バインダー）と
してアクリル系バインダーと、トルエンを溶媒として混
合してスラリーを調製した後、ドクターブレード法にて
厚さ２５０μｍのシート状に成形した。そして、所定箇
所にホール径１２０μｍのビアホールを形成した。Example 2 MnO 2 was added to aluminum oxide powder (average particle size: 1.8 μm) at a ratio of 4% by weight and S
After adding and mixing 3% by weight of iO 2 and 0.5% by weight of MgO, a slurry was prepared by further mixing an acrylic binder as an organic resin (binder) for molding with toluene as a solvent, It was formed into a sheet having a thickness of 250 μm by a doctor blade method. Then, a via hole having a hole diameter of 120 μm was formed at a predetermined location.
【００５６】次に、平均粒径が５μｍの銅粉末を５０体
積％と、平均粒径が１μｍのＷ粉末５０体積％からなる
主導体成分１００体積部に対して、平均粒径が１μｍの
表５、６に示す各種ＴｉＯ２、Ｃｒ２Ｏ３、Ｆｅ
２Ｏ３、ＮｉＯ、ＭｎＯ ２ からなる酸化物粉末を金属換
算で０．５〜７体積部、場合によっては平均粒径が０．
５μｍのＡｌ２Ｏ３粉末を表５、６に示す比率で混合し
アクリル系バインダーとをアセトンを溶媒として導体ペ
ーストを作製した。Next, with respect to 50 volume% of copper powder having an average particle size of 5 μm and 50 volume% of a main powder containing 50 volume% of W powder having an average particle size of 1 μm, a table having an average particle size of 1 μm was prepared. Various TiO 2 , Cr 2 O 3 , Fe shown in 5 and 6
0.5 to 7 parts by volume of an oxide powder composed of 2 O 3 , NiO, and MnO 2 in terms of metal, and in some cases, an average particle size of 0.
5 μm Al 2 O 3 powder was mixed at the ratios shown in Tables 5 and 6, and an acrylic binder was used as a solvent in acetone to prepare a conductor paste.
【００５７】そして、シート状成形体上に上記導体ペー
ストを印刷塗布し、各シート状成形体のビアホール導体
にも上記配線層用導体ペーストを充填した。上記のよう
にして作製した各シート状成形体を位置合わせして積層
圧着して成形体積層体を作製した。その後、この成形体
積層体を実質的に水分を含まない酸素含有雰囲気中（Ｎ
2 ＋Ｏ2 または大気中）で脱脂を行った後、１３００℃
で、露点−１０℃の窒素水素混合雰囲気にて焼成した。Then, the above-mentioned conductor paste was printed and applied on the sheet-like molded body, and the via-hole conductor of each sheet-like molded body was also filled with the above-mentioned conductor paste for wiring layer. Each sheet-like molded body produced as described above was aligned and laminated and pressed to produce a molded laminate. Thereafter, the molded body laminate is placed in an oxygen-containing atmosphere substantially free of moisture (N
2 + O 2 or in the air) and then 1300 ° C
At a dew point of −10 ° C. in a mixed atmosphere of nitrogen and hydrogen.
【００５８】作製した配線基板における絶縁基板の相対
密度は、いずれも９９％以上、レーザーフラッシュ法に
よる熱伝導率（厚さ３ｍｍ）は１８Ｗ／ｍ・Ｋ、体積固
有抵抗が１０14Ω・ｃｍ以上であった。The relative density of the insulating substrate in each of the prepared wiring boards is 99% or more, the thermal conductivity (thickness 3 mm) by the laser flash method is 18 W / m · K, and the volume resistivity is 10 14 Ω · cm or more. Met.
【００５９】また、配線基板の表面配線層に対して、配
線の導体抵抗、長さ、幅、厚みを測定した後、厚さ１５
μｍの導体に換算したシート抵抗（ｍΩ／□）を算出し
た。また、組織を走査型電子顕微鏡にて観察を行い、表
面配線層中のＷ粒子の粒径を測定した。さらに、実施例
１と同様にして金具の接合強度を測定した。測定の結果
は、表５、６に示した。After measuring the conductor resistance, length, width, and thickness of the wiring on the surface wiring layer of the wiring board,
The sheet resistance (mΩ / □) converted into a μm conductor was calculated. The structure was observed with a scanning electron microscope, and the particle size of W particles in the surface wiring layer was measured. Further, the joint strength of the metal fitting was measured in the same manner as in Example 1. The measurement results are shown in Tables 5 and 6.
【００６０】[0060]
【表５】 [Table 5]
【００６１】[0061]
【表６】 [Table 6]
【００６２】表５、６の結果から明らかなように、Ｔｉ
Ｏ２、Ｃｒ２Ｏ３、Ｃｏ３Ｏ４、Ｆｅ ２ Ｏ ３ 、ＭｎＯ ２
などを適量添加した場合においても、無添加の場合（試
料Ｎo.１）に比較して表面配線層の絶縁基板への密着強
度の向上が確認されたが、その量が５体積部を越える
と、シート抵抗の低下が見られた。なお、表面配線層
は、いずれも３ｋｇｆ以上の高い接合強度を有するとと
もに、表面配線層のにじみや剥離等は全く見られなかっ
た。As is clear from the results in Tables 5 and 6, Ti
O 2 , Cr 2 O 3 , Co 3 O 4 , Fe 2 O 3 , MnO 2
Even when an appropriate amount was added, the adhesion strength of the surface wiring layer to the insulating substrate was improved as compared with the case where no additive was added (Sample No. 1), but when the amount exceeded 5 parts by volume. And a decrease in sheet resistance was observed. Each of the surface wiring layers had a high bonding strength of 3 kgf or more, and no bleeding or peeling of the surface wiring layer was observed.
【００６３】[0063]
【発明の効果】以上詳述した通り、本発明によれば、酸
化アルミニウムからなる絶縁基板の表面に、銅を含有す
る低抵抗の表面配線層を絶縁基板と同時焼成によって形
成することができるとともに、表面配線層中に特定の遷
移金属を含有することにより、表面配線層の絶縁基板と
の密着性を高めることができる結果、表面配線層に対し
て接続端子などの各種金具をロウ付けによって強固に接
続することができる。As described above in detail, according to the present invention, a low-resistance surface wiring layer containing copper can be formed on the surface of an insulating substrate made of aluminum oxide by simultaneous firing with the insulating substrate. By including a specific transition metal in the surface wiring layer, the adhesion of the surface wiring layer to the insulating substrate can be improved. As a result, various metal fittings such as connection terminals are brazed to the surface wiring layer by brazing. Can be connected to
【図１】本発明の多層配線基板の一実施態様を示す概略
断面図である。FIG. 1 is a schematic sectional view showing one embodiment of a multilayer wiring board of the present invention.
【図２】実施例における配線層の接合強度の測定方法を
説明するための図である。FIG. 2 is a diagram for explaining a method of measuring a bonding strength of a wiring layer in an example.
１ 絶縁基板 １ａ，１ｂ、１ｃ 絶縁層 ２ａ 表面配線層 ２ｂ 内部配線層 ３ ビアホール導体 ４ メッキ層 ５ ロウ材 ６ 金具 1 insulating substrate 1a, 1b, 1c insulating layer 2a Surface wiring layer 2b Internal wiring layer 3 Via hole conductor 4 Plating layer 5 brazing material 6 Metal fittings
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０５Ｋ 3/46 Ｈ０５Ｋ 3/46 Ｓ Ｔ Ｈ０１Ｌ 23/12 Ｃ (56)参考文献 特開 平７−15101（ＪＰ，Ａ) 特開 平６−223623（ＪＰ，Ａ) 特開 平５−144316（ＪＰ，Ａ) 特開 平９−142969（ＪＰ，Ａ) 特開 昭60−113986（ＪＰ，Ａ) 特開 平８−81265（ＪＰ，Ａ) 特開 平８−161931（ＪＰ，Ａ) 特開 平６−125153（ＪＰ，Ａ) 特開 平８−8503（ＪＰ，Ａ) 特開 平６−53354（ＪＰ，Ａ) 特開 平８−186346（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H05K 1/09 H05K 3/46 H05K 3/12 ────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 7 Identification symbol FI H05K 3/46 H05K 3/46 ST H01L 23/12 C (56) References JP-A-7-15101 (JP, A) JP-A-6-223623 (JP, A) JP-A-5-144316 (JP, A) JP-A-9-142969 (JP, A) JP-A-60-113986 (JP, A) JP-A-8-81265 ( JP, A) JP-A-8-161931 (JP, A) JP-A-6-125153 (JP, A) JP-A-8-8503 (JP, A) JP-A-6-53354 (JP, A) Hei 8-186346 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H05K 1/09 H05K 3/46 H05K 3/12
Claims (9)
９５％以上のセラミックスからなる絶縁基板と、該絶縁
基板の少なくとも表面に該絶縁基板との同時焼成によっ
て形成され、銅（Ｃｕ）を１０〜７０体積％、タングス
テン（Ｗ）及び／またはモリブデン（Ｍｏ）を３０〜９
０体積％からなる主導体成分１００体積部に対して、Ｔ
ｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉの群から選ばれ
る少なくとも１種を金属換算で０．０１〜５体積部の割
合で含有し、かつ銅からなるマトリックス中に少なくと
も前記タングステン及び／またはモリブデンの粒子が分
散してなる表面配線層を具備してなることを特徴とする
配線基板。1. An insulating substrate made of ceramics containing aluminum oxide as a main component and having a relative density of 95% or more, and formed on at least the surface of the insulating substrate by simultaneous firing with the insulating substrate. 70 to 70% by volume of tungsten (W) and / or molybdenum (Mo)
For 100 parts by volume of the main conductor component consisting of 0% by volume, T
selected from the group consisting of i, Cr, Mn, Fe, Co and Ni
And a surface wiring layer comprising at least one of the above tungsten and / or molybdenum particles dispersed in a matrix made of copper and containing at least one kind thereof in a metal conversion ratio of 0.01 to 5 parts by volume. A wiring board characterized by the above-mentioned.
以下であることを特徴とする請求項１記載の配線基板。2. The sheet resistance of the surface wiring layer is 8 mΩ / □.
The wiring board according to claim 1, wherein:
れてなることを特徴とする請求項１記載の配線基板。3. The wiring board according to claim 1, wherein a metal fitting is brazed to the surface wiring layer.
ンガン化合物をＭｎＯ2換算で２．０〜６．０重量％の
割合で含有することを特徴とする請求項１記載の配線基
板。4. The wiring board according to claim 1, wherein said aluminum oxide ceramic contains a manganese compound at a ratio of 2.0 to 6.0% by weight in terms of MnO2.
体積部に対して、酸化アルミニウム、または絶縁基板と
同じ成分のセラミックスを０．０５〜２体積部の割合で
含有することを特徴とする請求項１記載の配線基板。5. The semiconductor device according to claim 1, wherein the surface wiring layer comprises the main conductor component (100).
2. The wiring board according to claim 1, wherein aluminum oxide or ceramics having the same composition as the insulating substrate is contained in a proportion of 0.05 to 2 parts by volume with respect to the volume.
ク成分を含有するグリーンシートの表面に、銅（Ｃｕ）
含有粉末を金属換算で１０〜７０体積％、タングステン
（Ｗ）及び／またはモリブデン（Ｍｏ）含有粉末を金属
換算で３０〜９０体積％からなる主導体成分１００体積
部に対して、Ｔｉ、Ｃｒ、Ｍｎ、Ｆｅ、ＣｏおよびＮｉ
の群から選ばれる少なくとも１種の含有粉末を金属換算
で０．０１〜５体積部の割合で含有してなる導体ペース
トを回路パターン状に印刷塗布した後、該グリーンシー
トを積層し、１２００〜１５００℃の非酸化性雰囲気中
で焼成して、相対密度９５％以上の酸化アルミニウムセ
ラミックスからなる絶縁基板表面に表面配線層を形成す
ることを特徴とする配線基板の製造方法。6. The surface of a green sheet containing a ceramic component mainly composed of aluminum oxide is coated with copper (Cu).
With respect to 100 parts by volume of a main conductor component comprising 10 to 70% by volume of a metal-containing powder and 30 to 90% by volume of a tungsten (W) and / or molybdenum (Mo) -containing powder in terms of metal, Ti, Cr, Mn, Fe, Co and Ni
After printing and applying a conductor paste containing at least one kind of powder selected from the group of 0.01 to 5 parts by volume in terms of metal in the form of a circuit pattern, the green sheets were laminated, and A method for manufacturing a wiring board, comprising: sintering in a non-oxidizing atmosphere at 1500 ° C. to form a surface wiring layer on the surface of an insulating substrate made of aluminum oxide ceramic having a relative density of 95% or more.
とを特徴とする請求項６記載の配線基板の製造方法。7. The method according to claim 6, wherein a metal fitting is brazed to the surface wiring layer.
ミック成分中に、マンガン化合物をＭｎＯ２換算で２．
０〜６．０重量％の割合で含有することを特徴とする請
求項６記載の配線基板の製造方法。8. A ceramic component mainly containing aluminum oxide, a manganese compound with MnO 2 in terms 2.
7. The method for producing a wiring board according to claim 6, wherein the content is 0 to 6.0% by weight.
０重量部に対して、酸化アルミニウム、または絶縁基板
と同じ成分のセラミックスを０．０５〜２体積部の割合
で含有することを特徴とする請求項６記載の配線基板の
製造方法。9. The method according to claim 9, wherein the conductive paste is composed of the main conductive component (10).
7. The method for manufacturing a wiring board according to claim 6, wherein 0.05 to 2 parts by volume of aluminum oxide or a ceramic having the same component as that of the insulating substrate is contained with respect to 0 parts by weight.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24536098A JP3538549B2 (en) | 1998-08-31 | 1998-08-31 | Wiring board and method of manufacturing the same |
| US09/378,849 US6329065B1 (en) | 1998-08-31 | 1999-08-23 | Wire board and method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24536098A JP3538549B2 (en) | 1998-08-31 | 1998-08-31 | Wiring board and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000077805A JP2000077805A (en) | 2000-03-14 |
| JP3538549B2 true JP3538549B2 (en) | 2004-06-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24536098A Expired - Fee Related JP3538549B2 (en) | 1998-08-31 | 1998-08-31 | Wiring board and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3538549B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106304624A (en) * | 2016-08-28 | 2017-01-04 | 广西小草信息产业有限责任公司 | A kind of PCB in integrated system and preparation method thereof |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4575614B2 (en) * | 2001-03-30 | 2010-11-04 | 京セラ株式会社 | Composite ceramic substrate |
| JP4646469B2 (en) * | 2001-09-26 | 2011-03-09 | 京セラ株式会社 | Ceramic wiring board |
| US7202154B2 (en) * | 2004-01-05 | 2007-04-10 | International Business Machines Corporation | Suspension for filling via holes in silicon and method for making the same |
| JP4949945B2 (en) * | 2007-06-20 | 2012-06-13 | 日本特殊陶業株式会社 | Ceramic wiring board and method for manufacturing ceramic wiring board |
| JP4949944B2 (en) * | 2007-06-20 | 2012-06-13 | 日本特殊陶業株式会社 | Ceramic wiring board and method for manufacturing ceramic wiring board |
| JP5725845B2 (en) * | 2010-12-22 | 2015-05-27 | 京セラ株式会社 | Ceramic circuit board for probe card and probe card using the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113986A (en) * | 1983-11-25 | 1985-06-20 | 富士通株式会社 | Method of producing copper conductor ceramic circuit board |
| JPH05144316A (en) * | 1991-11-21 | 1993-06-11 | Hitachi Ltd | Conductive paste composition |
| JPH0653354A (en) * | 1992-07-30 | 1994-02-25 | Kyocera Corp | Circuit board |
| JPH06125153A (en) * | 1992-10-12 | 1994-05-06 | Shinko Electric Ind Co Ltd | Aluminum nitride circuit board and manufacture thereof |
| JPH06223623A (en) * | 1992-12-28 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | Paste using copper as blank and ceramic package |
| JPH0715101A (en) * | 1993-06-25 | 1995-01-17 | Shinko Electric Ind Co Ltd | Oxide ceramic circuit board and its manufacture |
| JPH088503A (en) * | 1994-06-17 | 1996-01-12 | Kyocera Corp | Wiring board |
| JP3662955B2 (en) * | 1994-09-16 | 2005-06-22 | 株式会社東芝 | Circuit board and circuit board manufacturing method |
| JP3467873B2 (en) * | 1994-12-02 | 2003-11-17 | 株式会社村田製作所 | Method for manufacturing multilayer ceramic substrate |
| JP3199588B2 (en) * | 1994-12-28 | 2001-08-20 | 京セラ株式会社 | Wiring board |
| JP3411140B2 (en) * | 1995-11-28 | 2003-05-26 | 京セラ株式会社 | Metallized composition and method for manufacturing wiring board using the same |
-
1998
- 1998-08-31 JP JP24536098A patent/JP3538549B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106304624A (en) * | 2016-08-28 | 2017-01-04 | 广西小草信息产业有限责任公司 | A kind of PCB in integrated system and preparation method thereof |
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|---|---|
| JP2000077805A (en) | 2000-03-14 |
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