JPH05223842A - Acceleration sensor - Google Patents
Acceleration sensorInfo
- Publication number
- JPH05223842A JPH05223842A JP2914392A JP2914392A JPH05223842A JP H05223842 A JPH05223842 A JP H05223842A JP 2914392 A JP2914392 A JP 2914392A JP 2914392 A JP2914392 A JP 2914392A JP H05223842 A JPH05223842 A JP H05223842A
- Authority
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- Japan
- Prior art keywords
- gauge
- electronic circuit
- section
- acceleration sensor
- wire bonding
- Prior art date
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は加速度センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an acceleration sensor.
【0002】[0002]
【従来の技術】従来より、自動車等に加速度センサを搭
載して、このセンサ信号を基に各種の車両の運動制御が
行われている。2. Description of the Related Art Conventionally, an acceleration sensor is mounted on an automobile or the like, and motion control of various vehicles is performed based on the sensor signal.
【0003】加速度センサとしては、歪ゲージ式や静電
容量式の半導体センサ等が使用されている。センサの実
装構造としては、特開昭61−230383号公報等に
開示されるように、回路基板上にゲージ部(検出素子)
からのセンサ信号を処理する電子回路部を形成すると共
に、回路基板の残りのスペースに上記ゲージ部を搭載し
ていた。A strain gauge type or capacitance type semiconductor sensor or the like is used as the acceleration sensor. As a mounting structure of the sensor, as disclosed in Japanese Patent Laid-Open No. 61-230383, a gauge portion (detection element) is provided on a circuit board.
An electronic circuit section for processing the sensor signal from the sensor was formed, and the gauge section was mounted in the remaining space of the circuit board.
【0004】図10はこの種加速度センサの従来の代表
的構造例を示す平面図で、回路基板12上に半導体形の
検出素子(ゲージ部)1とICチップ化された電子回路
部11とを平行に並べて配置し、これらをワイヤボンデ
ィング14を介して電気的に接続している。FIG. 10 is a plan view showing an example of a typical conventional structure of this kind of acceleration sensor, in which a semiconductor type detection element (gauge section) 1 and an electronic circuit section 11 formed into an IC chip are arranged on a circuit board 12. They are arranged in parallel and are electrically connected to each other through wire bonding 14.
【0005】[0005]
【発明が解決しようとする課題】上記のようなセンサ搭
載構造によれば、回路基板12上のゲージ部1の搭載箇
所には回路パターンを形成することができず、また、電
子回路部11とゲージ部1とが回路基板上に並べた状態
となるため実装面積が大きくなり、センサ全体の小形化
を思うように図れない。According to the sensor mounting structure as described above, the circuit pattern cannot be formed at the mounting portion of the gauge portion 1 on the circuit board 12, and the electronic circuit portion 11 and Since the gauge part 1 and the gauge part 1 are arranged side by side on the circuit board, the mounting area becomes large and the miniaturization of the entire sensor cannot be achieved.
【0006】また、ゲージ部1と電子回路部11とをワ
イヤボンディング14で橋渡しをした構造で接続してい
たが、このような接続では、外部からの振動や衝撃に対
し異なる動きとなるために、双方の接続部に応力集中を
受けて疲労による強度低下が生じ易い。Further, although the gauge portion 1 and the electronic circuit portion 11 are connected by a structure in which they are bridged by the wire bonding 14, such a connection causes different movements due to external vibration or shock. The strength is likely to decrease due to fatigue due to stress concentration on both connecting portions.
【0007】また電子回路部11の発熱の影響によりゲ
ージ部1と電子回路部11とで温度分布に不均衡が発生
し、出力に影響を与える。Further, due to the effect of heat generation of the electronic circuit section 11, an imbalance occurs in the temperature distribution between the gauge section 1 and the electronic circuit section 11, which affects the output.
【0008】本発明は以上の点に鑑みてなされ、その目
的は、この種加速度センサの小形化,コストの低減を図
ると共に、接続部の信頼性の向上及び温度変化に対する
センサの特性変化を抑制できる加速度センサを提供する
ことにある。The present invention has been made in view of the above points, and an object thereof is to reduce the size and cost of an acceleration sensor of this kind, improve the reliability of the connection portion, and suppress the characteristic change of the sensor due to temperature change. An object is to provide an acceleration sensor that can be used.
【0009】[0009]
【課題を解決するための手段】本発明は上記目的を達成
するために、基本的には次のような課題解決手段を提案
する。In order to achieve the above object, the present invention basically proposes the following means for solving the problems.
【0010】すなわち、加速度検出素子であるゲージ部
と、前記ゲージ部の電気信号を処理する電子回路部とを
備えた加速度センサにおいて、前記ゲージ部の上にIC
チップ化された前記電子回路部を重ねた構造とした。That is, in an acceleration sensor provided with a gauge section which is an acceleration detecting element and an electronic circuit section which processes an electric signal of the gauge section, an IC is provided on the gauge section.
It has a structure in which the electronic circuit portions formed into chips are stacked.
【0011】[0011]
【作用】ゲージ部の上に信号処理用の電子回路部(IC
チップ)を重ねた構造とすることで、ゲージ部及び電子
回路部を搭載する回路基板の実装面積を小さくする。[Function] An electronic circuit section (IC for signal processing) is provided on the gauge section.
By adopting a structure in which chips are stacked, the mounting area of the circuit board on which the gauge section and the electronic circuit section are mounted is reduced.
【0012】また、ゲージ部の上に電子回路部を重ねた
状態とするため、これらが外部の振動,衝撃に対して一
体的に同じ動作するので、接続部は異なる応力を受ける
ことがなく、接続部の疲労を軽減する。また、ゲージ部
は電子回路部と一体化されるため、電子回路部の発熱が
ゲージ部に伝わることで、双方の温度分布の不均衡がな
くなり、出力の温度特性が向上する。Further, since the electronic circuit portion is overlaid on the gauge portion, they integrally operate in the same manner against external vibration and impact, so that the connecting portion is not subjected to different stress, Reduces fatigue at the connection. Further, since the gauge section is integrated with the electronic circuit section, the heat generated in the electronic circuit section is transmitted to the gauge section, thereby eliminating the imbalance in the temperature distribution between the two and improving the temperature characteristic of the output.
【0013】[0013]
【実施例】本発明の実施例を図面により説明する。Embodiments of the present invention will be described with reference to the drawings.
【0014】図1の(a)は本発明の第1実施例に係る
加速度センサの部分斜視図、同図(b)はその部分断面
図、図2はその平面図、図3はその加速度センサの回路
図、図4はその動作波形を示すタイムチャートである。
なお、既述した図10の従来例に用いた符号と同一のも
のは同一或いは共通する要素を示す。FIG. 1 (a) is a partial perspective view of an acceleration sensor according to a first embodiment of the present invention, FIG. 1 (b) is a partial sectional view thereof, FIG. 2 is its plan view, and FIG. 3 is its acceleration sensor. FIG. 4 is a time chart showing its operation waveform.
The same reference numerals as those used in the conventional example of FIG. 10 described above indicate the same or common elements.
【0015】まず、本実施例のセンサの実装構造の説明
に先立ち、図3,図4により本実施例に用いるセンサの
全体の回路構成を説明する。First, prior to the description of the sensor mounting structure of this embodiment, the overall circuit configuration of the sensor used in this embodiment will be described with reference to FIGS.
【0016】図3において、ゲージ部1は加速度Gを検
出し、この信号を電子回路部11に入力させることで加
速度Gに比例した出力電圧Voを出力する。In FIG. 3, the gauge section 1 detects the acceleration G and inputs this signal into the electronic circuit section 11 to output an output voltage Vo proportional to the acceleration G.
【0017】ゲージ部1は、上下のガラス基板2A,2
Bの間にシリコン基板3´をエッチング成形した可動電
極3を介在させ、各ガラス基板2A,2Bに可動電極3
に対向するようにして固定電極5A,5Bを配設して成
る。可動電極3は固定電極5A,5Bと微小ギャップを
保ってカンチレバー4により弾性支持される。The gauge section 1 includes upper and lower glass substrates 2A and 2A.
The movable electrode 3 formed by etching the silicon substrate 3 ′ is interposed between the glass substrate B and the movable electrode 3 on each glass substrate 2A, 2B.
The fixed electrodes 5A and 5B are arranged so as to face each other. The movable electrode 3 is elastically supported by the cantilever 4 while maintaining a small gap with the fixed electrodes 5A and 5B.
【0018】可動電極3・固定電極5A間及び可動電極
3・固定電極5B間には静電容量C1,C2が存在し、
この値は電子回路部11側に入力される。Capacitances C1 and C2 exist between the movable electrode 3 and the fixed electrode 5A and between the movable electrode 3 and the fixed electrode 5B.
This value is input to the electronic circuit section 11 side.
【0019】電子回路部11は、静電容量検出回路6、
パルス幅変調回路7、ノット回路8、フィルタ9とを有
し、これらの要素により静電サーボタイプの静電容量式
加速度センサを構成している。The electronic circuit section 11 includes a capacitance detection circuit 6,
It has a pulse width modulation circuit 7, a knot circuit 8, and a filter 9, and these elements constitute an electrostatic servo type electrostatic capacitance type acceleration sensor.
【0020】すなわち、矢印方向に加速度Gがゲージ部
1に加わると、可動電極3がこれに応答して慣性力のた
め変位する。この変位を静電容量検出回路6がC1とC
2との静電容量差Cとしてとらえ、Cに比例した電圧V
cに変換してパルス幅変調回路7に入力させる。パルス
幅変調回路7はVcの値に比例したパルス幅をもつパル
ス電圧VEを発生し、このパルス電圧VEは一方の固定
電極5Aに印加される。また電圧VEはノット回路8で
反転され電圧VFとなって他方の固定電極5Bに印加さ
れる。That is, when acceleration G is applied to the gauge section 1 in the direction of the arrow, the movable electrode 3 is displaced due to inertial force in response to this. This displacement is detected by the capacitance detection circuit 6 as C1 and C.
Capacitance difference C from 2 and voltage V proportional to C
It is converted into c and inputted to the pulse width modulation circuit 7. The pulse width modulation circuit 7 generates a pulse voltage VE having a pulse width proportional to the value of Vc, and this pulse voltage VE is applied to one fixed electrode 5A. The voltage VE is inverted by the knot circuit 8 to become the voltage VF, which is applied to the other fixed electrode 5B.
【0021】以上の回路動作により加速度Gによる慣性
力とパルス電圧VE,VFによる静電気力とが平衡し、
パルス電圧VEのパルス幅をフィルタ9で取り出すこと
で加速度Gに次例した電圧Voが得られる。By the above circuit operation, the inertial force due to the acceleration G and the electrostatic force due to the pulse voltages VE and VF are balanced,
By extracting the pulse width of the pulse voltage VE with the filter 9, the voltage Vo exemplified below for the acceleration G can be obtained.
【0022】図4は図3の回路動作におけるパルス出力
波形VEを示したもので、加速度Gが0の場合、パルス
電圧VEのパルス幅TWは、周期Tの50%であり、G
が正の場合(G>0)は、パルス幅TWが50%より増
加し、負の場合(G<0)はパルス幅TWが50%より
減少する。つまり、加速度Gに対応してパルス幅TWが
変化し、この波形をフィルタした出力電圧Voは加速度
Gに比例した値となる。 この静電容量式加速度センサ
において、本実施例では、図1及び図2に示すように回
路基板12上にゲージ部1を搭載すると共に、ゲージ部
1上にICチップ化された電子回路部11をシリコン接
着剤13を介して重ね合わせて搭載する。FIG. 4 shows the pulse output waveform VE in the circuit operation of FIG. 3. When the acceleration G is 0, the pulse width TW of the pulse voltage VE is 50% of the period T, and G
Is positive (G> 0), the pulse width TW increases from 50%, and when it is negative (G <0), the pulse width TW decreases from 50%. That is, the pulse width TW changes according to the acceleration G, and the output voltage Vo obtained by filtering this waveform has a value proportional to the acceleration G. In this capacitance type acceleration sensor, in this embodiment, as shown in FIGS. 1 and 2, the gauge section 1 is mounted on the circuit board 12, and the electronic circuit section 11 is formed on the gauge section 1 as an IC chip. Are superposed and mounted via the silicone adhesive 13.
【0023】ゲージ部1の上面には、固定電極5A,5
Bの電極パッド31,33と可動電極3の電極パッド3
2とが形成され、これらのパッドと電子回路部11(I
Cチップ)上面に形成した対応のパッド34〜36及び
ワイヤボンディング14を介してゲージ部1と電子回路
部11とが電気的に接続される。また、回路基板12に
形成した導電パターン15(信号引出線,駆動電源供給
用引出線)とこれに対応の電子回路部11のパッド37
〜40もワイヤボンディング14´を介して接続する。
パッド31〜40は導電体をパターン形成したものであ
る。On the upper surface of the gauge section 1, fixed electrodes 5A, 5
B electrode pads 31, 33 and movable electrode 3 electrode pad 3
2 are formed, and these pads and the electronic circuit portion 11 (I
The gauge section 1 and the electronic circuit section 11 are electrically connected via the corresponding pads 34 to 36 formed on the upper surface of the C chip) and the wire bonding 14. In addition, the conductive pattern 15 (signal lead wire, drive power supply lead wire) formed on the circuit board 12 and the corresponding pad 37 of the electronic circuit section 11
-40 are also connected via wire bonding 14 '.
The pads 31 to 40 are formed by patterning a conductor.
【0024】このような実装構造によれば、図10に例
示した従来の実装構造に比べて部品の実装面積が約3分
の1以下になり、センサ全体の小形化,低コスト化を達
成できる。また、ゲージ部1と電子回路部11とを重ね
合わせて一体化した状態でワイヤボンディング14を介
して電気的に接続するので、振動や衝撃が加わった場合
にゲージ部1と電子回路部11とは一体的に動作するの
で、両者の接続部に加わる応力を少なくし接続部の疲労
を軽減し信頼性を高めることができる。According to such a mounting structure, the mounting area of the components is about one third or less of that of the conventional mounting structure illustrated in FIG. 10, and the downsizing and cost reduction of the entire sensor can be achieved. .. Further, since the gauge section 1 and the electronic circuit section 11 are electrically connected to each other through the wire bonding 14 in a state where they are superposed and integrated, the gauge section 1 and the electronic circuit section 11 are connected to each other when vibration or impact is applied. Since they operate integrally, it is possible to reduce the stress applied to the connecting portions of both, reduce the fatigue of the connecting portions, and improve the reliability.
【0025】また、ゲージ部1と電子回路部11とを重
ねて配置することで、電子回路部11の発熱がゲージ部
1に伝わり双方の温度分布に不均衡がなくなるので、セ
ンサの温度特性が向上する。By arranging the gauge section 1 and the electronic circuit section 11 so as to overlap with each other, the heat generation of the electronic circuit section 11 is transmitted to the gauge section 1 and the temperature distribution of both sides is eliminated. improves.
【0026】図5は本発明の第2実施例を示す部分断面
図である。第1実施例と異なる点は、電子回路部11と
回路基板12上のパターン15とを半田16及びジャン
パリード17を介して接続した点にある。その他は上記
第1実施例と同様の構成をなすため、第1実施例と同様
の効果を奏する。FIG. 5 is a partial sectional view showing a second embodiment of the present invention. The difference from the first embodiment is that the electronic circuit section 11 and the pattern 15 on the circuit board 12 are connected via solder 16 and jumper leads 17. Others have the same structure as that of the first embodiment, and therefore have the same effects as the first embodiment.
【0027】図6は本発明の第3実施例で、同図の
(a)が部分斜視図、(b)が部分断面図である。上記
各実施例と異なる点は、ゲージ部1の一部(シリコン基
板3´,ガラス基板2B)にその上面と下面に通じるス
ルーホール18Aを設け(スルーホール18Aのうちシ
リコン基板3´を貫通する部分は絶縁被覆23が施され
ている)、このホール18に導体19Aを充填すると共
に、導体20をシリコン基板3´上に絶縁しつつ蒸着
し、電子回路部11の電極パッド37〜40と回路基板
12上のパターン15とを、ワイヤボンディング14´
−ゲージ部1上面の導体部20−スルーホール18の導
体部19−ゲージ部1・回路基板12間の半田16を介
して電気的に接続した点にある。6A and 6B show a third embodiment of the present invention. FIG. 6A is a partial perspective view and FIG. 6B is a partial sectional view. The difference from each of the above-described embodiments is that a part of the gauge portion 1 (silicon substrate 3 ', glass substrate 2B) is provided with a through hole 18A communicating with the upper surface and the lower surface thereof (the through hole 18A penetrates the silicon substrate 3'). (The portion is provided with an insulating coating 23), the hole 18 is filled with the conductor 19A, and the conductor 20 is vapor-deposited on the silicon substrate 3'while being insulated, and the electrode pads 37 to 40 of the electronic circuit section 11 and the circuit are formed. The pattern 15 on the substrate 12 is connected to the wire bonding 14 '.
-The conductor portion 20 on the upper surface of the gauge portion 1-The conductor portion 19 of the through hole 18-The gauge portion 1 and the circuit board 12 are electrically connected via the solder 16.
【0028】本実施例によれば、上記各実施例と同様の
効果を奏するほかに、電子回路部11と回路基板12と
の電気的接続に用いるワイヤボンディング14´もゲー
ジ部1とその上に重ねた電子回路部11との間を接続す
ればよいので、その接続部に受ける応力を少なくして接
続の信頼性を高める。According to this embodiment, in addition to the same effects as the above-mentioned respective embodiments, the wire bonding 14 'used for electrical connection between the electronic circuit portion 11 and the circuit board 12 is also provided on the gauge portion 1 and above it. Since the connection with the overlapped electronic circuit section 11 is sufficient, the stress applied to the connection section is reduced and the reliability of the connection is improved.
【0029】図7は本発明の第4実施例を示し、同図の
(a)が部分斜視図、(b)が部分断面図である。FIG. 7 shows a fourth embodiment of the present invention, in which (a) is a partial perspective view and (b) is a partial sectional view.
【0030】本実施例が上記各実施例と異なる点は、ゲ
ージ部1の一部(シリコン基板3´)にスルーホール1
8Aを設け(スルーホール18Aには絶縁被覆23が施
されている)、このホール18Aに導体19Aを充填
し、電子回路部11の電極パッド37〜40と回路基板
12上のパターン15とを、ワイヤボンディング14a
´−ゲージ部1上面の導体部20−スルーホール導体部
19A−ガラス基板上の導体部21−ワイヤボンディン
グ14b´を介して接続した点にある。The present embodiment is different from the above-mentioned embodiments in that the through hole 1 is formed in a part of the gauge portion 1 (silicon substrate 3 ').
8A is provided (the through hole 18A is provided with the insulating coating 23), the hole 18A is filled with the conductor 19A, and the electrode pads 37 to 40 of the electronic circuit section 11 and the pattern 15 on the circuit board 12 are connected to each other. Wire bonding 14a
′ -The conductor portion 20 on the upper surface of the gauge portion 1-the through-hole conductor portion 19A-the conductor portion 21 on the glass substrate-the point where they are connected via the wire bonding 14b '.
【0031】図8は本発明の第5実施例を示し、同図の
(a)が部分斜視図、(b)が部分断面図である。FIG. 8 shows a fifth embodiment of the present invention, in which (a) is a partial perspective view and (b) is a partial sectional view.
【0032】本実施例が上記各実施例と異なる点は、ゲ
ージ部1とその上に重ねた電子回路部11との電気的接
続を、ワイヤボンディングを用いずその重ね合わせ面に
形成した導電パターンを介して行った点にある。The present embodiment is different from each of the above embodiments in that the electrical connection between the gauge portion 1 and the electronic circuit portion 11 overlaid on the gauge portion 1 is formed on the overlapping surface without using wire bonding. There is a point that went through.
【0033】すなわち、電子回路部11のICチップを
今まで述べた実施例とは表と裏を逆にして、電子回路部
11側の導電パターン34〜36をゲージ部1の上面
(上ガラス基板2A上面)に設けた導電パターン31〜
33(31〜33は固定電極5A,5B及び可動電極3
の電極端子となる)とを対向させて導電性接着剤22を
介して接続する。この電気的接続を行う場合には、導電
パターン31〜33は上ガラス基板2A上面に形成して
あるため、このうち、可動電極3の端子となる導電パタ
ーン32は図8(b)に示すように、上ガラス基板2A
にスルーホール18Bを設け、このホールに導電体19
Bを充填して導電パターンと可動電極3とを電気的に導
通させている。また、固定電極5Aとその端子(導電パ
ターン33)とは、上ガラス基板2Aにスルーホール
(図示せず)を設け、このホールに充填される導電体
(図示せず)をシリコン基板3´と絶縁させて、この導
電体を介して電気的に導通される。一方、固定電極5B
とその端子(導電パターン31)とは、上ガラス基板2
A及びシリコン基板3´にスルーホール(図示せず、ま
たこのスルーホールのうちシリコン基板3´側は絶縁被
覆が施されている)を設け、このホールに充填される導
電体(図示せず)を介して電気的に導通される。That is, the IC chip of the electronic circuit section 11 is turned upside down from the above-described embodiments, and the conductive patterns 34 to 36 on the electronic circuit section 11 side are arranged on the upper surface of the gauge section 1 (upper glass substrate). 2A top surface) conductive pattern 31 to
33 (31 to 33 are fixed electrodes 5A and 5B and movable electrode 3
(Which will be the electrode terminal of) is connected via a conductive adhesive 22. When this electrical connection is made, the conductive patterns 31 to 33 are formed on the upper surface of the upper glass substrate 2A. Therefore, the conductive pattern 32 serving as the terminal of the movable electrode 3 is as shown in FIG. 8B. On the upper glass substrate 2A
A through hole 18B is provided in the
B is filled to electrically connect the conductive pattern to the movable electrode 3. Further, the fixed electrode 5A and its terminal (conductive pattern 33) are provided with a through hole (not shown) in the upper glass substrate 2A, and a conductor (not shown) filled in this hole is used as the silicon substrate 3 '. It is electrically insulated and electrically connected through this conductor. On the other hand, fixed electrode 5B
And the terminal (conductive pattern 31) of the upper glass substrate 2
A and a silicon substrate 3 ′ are provided with through holes (not shown, and the silicon substrate 3 ′ side of the through holes is provided with an insulating coating), and conductors (not shown) filled in the holes. Is electrically conducted through.
【0034】一方、電子回路部11と回路基板12上の
導電パターン15とは、重ね合わせ面に形成した導電パ
ターン37〜40のそれぞれ−これに対応の導電性接着
剤22−上ガラス基板2A上の導電パターン20−ワイ
ヤボンディング14´を介して接続される。On the other hand, the electronic circuit portion 11 and the conductive pattern 15 on the circuit board 12 are respectively the conductive patterns 37 to 40 formed on the superposed surfaces-the conductive adhesive 22 corresponding thereto-on the glass substrate 2A. Of the conductive pattern 20 and the wire bonding 14 '.
【0035】なお、ゲージ部1と電子回路部11とは、
パターン同士の個所を導電性接着剤22で接続するほか
に、残りの部分(ゲージ部1と電子回路部11との重ね
合わせの大部分)はシリコン接着剤13で接着してい
る。The gauge section 1 and the electronic circuit section 11 are
In addition to connecting the portions between the patterns with a conductive adhesive 22, the remaining portion (most of the overlapping of the gauge portion 1 and the electronic circuit portion 11) is attached with a silicone adhesive 13.
【0036】本実施例によれば、上記各実施例同様の効
果を奏するほかに、ゲージ部1と電子回路部11との電
気的接続をワイヤボンディングを使用せず簡易な導電性
接着剤22を介して導電パターンにより行い得る利点が
ある。According to this embodiment, in addition to the effects similar to the above-mentioned respective embodiments, a simple conductive adhesive 22 is used to electrically connect the gauge portion 1 and the electronic circuit portion 11 without using wire bonding. There is an advantage that it can be performed by a conductive pattern.
【0037】図9は本発明の第6実施例を示し、同図
(a)はその部分斜視図、(b)は部分断面図である。FIG. 9 shows a sixth embodiment of the present invention, FIG. 9 (a) is a partial perspective view thereof, and FIG. 9 (b) is a partial sectional view thereof.
【0038】本実施例もゲージ部1と電子回路部11と
は図8の第5実施例同様の導電パターンを介して電気的
に接続するが、電子回路部11と回路基板12上の導電
パターン15との接続も、ワイヤボンディングを用いな
いで行った。In this embodiment as well, the gauge portion 1 and the electronic circuit portion 11 are electrically connected via the same conductive pattern as in the fifth embodiment of FIG. 8, but the electronic circuit portion 11 and the conductive pattern on the circuit board 12 are connected. The connection with 15 was also made without using wire bonding.
【0039】すなわち、ワイヤボンディングの代わり
に、ゲージ部1の上ガラス基板2A,シリコン基板3´
及び下ガラス基板2Bにスルーホール18が設けてあり
(スルーホール18のうちシリコン基板3´の部分には
絶縁被覆23が施してある)、スルーホールに導電体1
9が充填してある。そして、電子回路部11と回路基板
12の導電パターン15とは、電子回路部11側の導電
パターン37〜40のそれぞれ−電子回路部11・上ガ
ラス基板2A間の導電性接着剤22(この部分は半田に
よる半田リフロー接続でもよい)−導電体20−導電体
19−下ガラス基板2B・回路基板12間の導電性接着
剤(この部分は半田による半田リフロー接続でもよい)
22を介して電気的に接続した。That is, instead of wire bonding, the upper glass substrate 2A of the gauge portion 1 and the silicon substrate 3 '.
Through holes 18 are provided in the lower glass substrate 2B (the silicon substrate 3'of the through holes 18 is provided with an insulating coating 23), and the conductor 1 is provided in the through holes.
9 is filled. The electronic circuit portion 11 and the conductive pattern 15 of the circuit board 12 are respectively the conductive patterns 37 to 40 on the electronic circuit portion 11 side-the conductive adhesive 22 between the electronic circuit portion 11 and the upper glass substrate 2A (this portion). May be solder reflow connection with solder) -electric conductor 20-electric conductor 19-conductive adhesive between lower glass substrate 2B and circuit board 12 (this portion may be solder reflow connection with solder)
It was electrically connected via 22.
【0040】本実施例では、上記各実施例同様の効果を
奏するほかに、ワイヤボンディングを回路基板12上か
らなくして、より構造の簡略化を図り得る利点がある。In addition to the same effects as the above-described respective embodiments, the present embodiment has an advantage that the wire bonding can be eliminated from the circuit board 12 to further simplify the structure.
【0041】なお、上記各実施例は静電容量式の加速度
センサについて説明したが、本発明のゲージ部と電子回
路部との実装構造は他の種類の加速度センサについても
適用可能である。Although the above embodiments have been described with respect to the capacitance type acceleration sensor, the mounting structure of the gauge section and the electronic circuit section of the present invention can be applied to other types of acceleration sensors.
【0042】[0042]
【発明の効果】以上のように本発明によれば、ゲージ部
の上に電子回路部を重ねて実装することにより、センサ
全体の小形化を図りつつ、部品同士の電気的接続部の信
頼性及び温度特性の向上を図ることができる。As described above, according to the present invention, by mounting the electronic circuit portion on the gauge portion in a stacked manner, it is possible to reduce the size of the entire sensor and to improve the reliability of the electrical connection portion between the components. Also, the temperature characteristics can be improved.
【図1】本発明の第1実施例に係る部分斜視図及び部分
断面図FIG. 1 is a partial perspective view and a partial sectional view according to a first embodiment of the present invention.
【図2】第1実施例の平面図FIG. 2 is a plan view of the first embodiment.
【図3】第1実施例の回路構成図FIG. 3 is a circuit configuration diagram of the first embodiment.
【図4】第1実施例の動作例を示すタイムチャートFIG. 4 is a time chart showing an operation example of the first embodiment.
【図5】本発明の第2実施例を示す部分断面図FIG. 5 is a partial sectional view showing a second embodiment of the present invention.
【図6】本発明の第3実施例を示す部分斜視図及び部分
断面図FIG. 6 is a partial perspective view and a partial sectional view showing a third embodiment of the present invention.
【図7】本発明の第4実施例を示す部分斜視図及び部分
断面図FIG. 7 is a partial perspective view and a partial sectional view showing a fourth embodiment of the present invention.
【図8】本発明の第5実施例を示す部分斜視図及び部分
断面図FIG. 8 is a partial perspective view and a partial sectional view showing a fifth embodiment of the present invention.
【図9】本発明の第6実施例を示す部分斜視図及び部分
断面図FIG. 9 is a partial perspective view and a partial sectional view showing a sixth embodiment of the present invention.
【図10】従来の加速度センサの実装構造の一例を示す
平面図FIG. 10 is a plan view showing an example of a mounting structure of a conventional acceleration sensor.
1…ゲージ部、2A,2B…ガラス基板、3´…シリコ
ン基板、3…可動電極、5A,5B…固定電極、11…
電子回路部(ICチップ)、13…シリコン接着剤、1
4…ワイヤボンディング、31〜36…導電パターン、
22…導電性接着剤(もしくは半田)。1 ... Gauge part, 2A, 2B ... Glass substrate, 3 '... Silicon substrate, 3 ... Movable electrode, 5A, 5B ... Fixed electrode, 11 ...
Electronic circuit part (IC chip), 13 ... Silicone adhesive, 1
4 ... Wire bonding, 31-36 ... Conductive pattern,
22 ... Conductive adhesive (or solder).
フロントページの続き (72)発明者 鈴木 政善 茨城県勝田市大字高場2520番地 株式会社 日立製作所自動車機器事業部内 (72)発明者 藤田 弘和 茨城県勝田市大字高場2520番地 株式会社 日立製作所自動車機器事業部内 (72)発明者 半沢 恵二 茨城県勝田市大字高場字鹿島谷津2477番地 3 日立オートモティブエンジニアリング 株式会社内Front page continued (72) Inventor Masayoshi Suzuki, 2520 Takaba, Katsuta-shi, Ibaraki Takaba, Hitachi, Ltd. Automotive Equipment Division (72) Inventor Hirokazu Fujita 2520, Takata, Katsuta, Ibaraki Hitachi, Ltd. Automotive Equipment (72) Inventor Keiji Hanzawa 2477 Kashima Yatsu Kashima Yatsu Katsuta City, Ibaraki Prefecture 3 Hitachi Automotive Engineering Co., Ltd.
Claims (6)
ゲージ部の電気信号を処理する電子回路部とを備えた加
速度センサにおいて、 前記ゲージ部の上にIC(集積回路)チップ化された前
記電子回路部を重ねた構造としたことを特徴とする加速
度センサ。1. An acceleration sensor comprising a gauge section which is an acceleration detecting element and an electronic circuit section which processes an electric signal of the gauge section, wherein an IC (integrated circuit) chip is formed on the gauge section. An acceleration sensor having a structure in which electronic circuit parts are stacked.
上に重ねた前記電子回路部とを、ワイヤボンディングに
より電気的に接続したことを特徴とする加速度センサ。2. The acceleration sensor according to claim 1, wherein the gauge portion and the electronic circuit portion overlaid on the gauge portion are electrically connected by wire bonding.
上に重ねた前記電子回路部とを、その重ね合わせ面に導
電パターンを形成して、この導電パターンを介して電気
的に接続したことを特徴とする加速度センサ。3. A conductive pattern according to claim 1, wherein the gauge portion and the electronic circuit portion superposed on the gauge portion are formed with a conductive pattern on the overlapping surface and are electrically connected via the conductive pattern. Acceleration sensor characterized by.
ージ部と前記電子回路部との電気的接続は、導電性接着
剤を用いて同時に固定と接続を行ったことを特徴とする
加速度センサ。4. The acceleration sensor according to claim 1, wherein the gauge section and the electronic circuit section are electrically connected and fixed at the same time using a conductive adhesive. ..
電子回路部との電気的接続は、半田を用いたパターン接
続としたことを特徴とする加速度センサ。5. The acceleration sensor according to claim 3, wherein the electrical connection between the gauge section and the electronic circuit section is pattern connection using solder.
において、前記ゲージ部は、加速度に応じて変位する可
動電極と、この可動電極と微小ギャップを介して対向す
る固定電極とよりなる静電容量式の加速度センサ。6. The gauge portion according to claim 1, wherein the gauge portion includes a movable electrode that is displaced according to acceleration, and a fixed electrode that faces the movable electrode through a minute gap. Capacitance type acceleration sensor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2914392A JPH05223842A (en) | 1992-02-17 | 1992-02-17 | Acceleration sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2914392A JPH05223842A (en) | 1992-02-17 | 1992-02-17 | Acceleration sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05223842A true JPH05223842A (en) | 1993-09-03 |
Family
ID=12268056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2914392A Pending JPH05223842A (en) | 1992-02-17 | 1992-02-17 | Acceleration sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05223842A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129888A (en) * | 2003-10-03 | 2005-05-19 | Matsushita Electric Works Ltd | Sensor device and sensor system, and manufacturing method therefor |
WO2005104228A1 (en) * | 2004-04-22 | 2005-11-03 | Matsushita Electric Works, Ltd. | Sensor device, sensor system and methods for manufacturing them |
WO2006049004A1 (en) * | 2004-11-08 | 2006-05-11 | Hitachi Metals, Ltd. | Acceleration sensor |
JP2007043134A (en) * | 2005-07-05 | 2007-02-15 | Oki Electric Ind Co Ltd | Semiconductor chip package and its manufacturing method |
JP2008155326A (en) * | 2006-12-25 | 2008-07-10 | Matsushita Electric Works Ltd | Semiconductor device and manufacturing method therefor |
JP2009223620A (en) * | 2008-03-17 | 2009-10-01 | Denso Corp | Structure of assembling dynamic quantity sensor |
JP2013015529A (en) * | 2012-08-30 | 2013-01-24 | Dainippon Printing Co Ltd | Physical quantity sensor and method of manufacturing the same |
JP2014183151A (en) * | 2013-03-19 | 2014-09-29 | Seiko Epson Corp | Module, manufacturing method of module, electronic apparatus, and movable body |
-
1992
- 1992-02-17 JP JP2914392A patent/JPH05223842A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129888A (en) * | 2003-10-03 | 2005-05-19 | Matsushita Electric Works Ltd | Sensor device and sensor system, and manufacturing method therefor |
JP4539155B2 (en) * | 2003-10-03 | 2010-09-08 | パナソニック電工株式会社 | Manufacturing method of sensor system |
WO2005104228A1 (en) * | 2004-04-22 | 2005-11-03 | Matsushita Electric Works, Ltd. | Sensor device, sensor system and methods for manufacturing them |
US7642611B2 (en) | 2004-04-22 | 2010-01-05 | Panasonic Electric Works Co., Ltd. | Sensor device, sensor system and methods for manufacturing them |
WO2006049004A1 (en) * | 2004-11-08 | 2006-05-11 | Hitachi Metals, Ltd. | Acceleration sensor |
US7716984B2 (en) | 2004-11-08 | 2010-05-18 | Hitachi Metal Ltd. | Acceleration sensor device having piezo-resistors measuring acceleration |
JP2007043134A (en) * | 2005-07-05 | 2007-02-15 | Oki Electric Ind Co Ltd | Semiconductor chip package and its manufacturing method |
JP2008155326A (en) * | 2006-12-25 | 2008-07-10 | Matsushita Electric Works Ltd | Semiconductor device and manufacturing method therefor |
JP2009223620A (en) * | 2008-03-17 | 2009-10-01 | Denso Corp | Structure of assembling dynamic quantity sensor |
JP2013015529A (en) * | 2012-08-30 | 2013-01-24 | Dainippon Printing Co Ltd | Physical quantity sensor and method of manufacturing the same |
JP2014183151A (en) * | 2013-03-19 | 2014-09-29 | Seiko Epson Corp | Module, manufacturing method of module, electronic apparatus, and movable body |
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