JPH05177534A - Polishing method for silicon wafer of semiconductor - Google Patents
Polishing method for silicon wafer of semiconductorInfo
- Publication number
- JPH05177534A JPH05177534A JP3359170A JP35917091A JPH05177534A JP H05177534 A JPH05177534 A JP H05177534A JP 3359170 A JP3359170 A JP 3359170A JP 35917091 A JP35917091 A JP 35917091A JP H05177534 A JPH05177534 A JP H05177534A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- silicon wafer
- pressure region
- low pressure
- initial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体用シリコンウ
ェーハにおいて、ラッピングにて一般に必要とする形
状、厚みに施したシリコンウェーハにエッチングを施し
メカノケミカルポリシングにてシリコンウェーハの表面
を高精度に研磨する鏡面研磨方法の改良に係り、ＭＣＰ
初期研磨工程を高圧領域と低圧領域の多段研磨となすこ
とにより、ＯＳＦ密度の低減、表面精度の向上、生産性
向上を図った半導体用シリコンウェーハの研磨方法に関
する。BACKGROUND OF THE INVENTION The present invention relates to a semiconductor silicon wafer, which has a shape and thickness generally required for lapping, is etched, and the surface of the silicon wafer is polished with high precision by mechanochemical polishing. To improve the mirror polishing method
The present invention relates to a method for polishing a silicon wafer for semiconductors, in which the OSF density is reduced, the surface accuracy is improved, and the productivity is improved by making the initial polishing step a multi-step polishing of a high pressure region and a low pressure region.
【０００２】[0002]
【従来の技術】従来、半導体用シリコンウェーハの製造
に際して、エッチングを施したシリコンウェーハをメカ
ノケミカルポリシング初期研磨にて、必要とする形状、
厚みにポリシングした後、ファイナルポリシングを施
し、加工歪の少ない高精度な鏡面を得る方法が用いられ
ている。2. Description of the Related Art Conventionally, when manufacturing a silicon wafer for semiconductors, a silicon wafer subjected to etching is subjected to an initial polishing for mechanochemical polishing to obtain a desired shape,
A method is used in which after polishing to a thickness, final polishing is performed to obtain a highly accurate mirror surface with less processing distortion.
【０００３】また、従来のメカノケミカルポリシング初
期研磨方法においては、生産効率とＯＳＦ密度の低減と
の兼ね合いから決定された一定の圧力で、所要時間の研
磨を行い必要とする形状、厚みに研磨処理が行なわれて
いた。Further, in the conventional mechanochemical polishing initial polishing method, polishing is performed for a required time at a constant pressure determined from the balance between production efficiency and reduction of OSF density, and a desired shape and thickness are obtained. Was being conducted.
【０００４】[0004]
【発明が解決しようとする課題】すなわち、メカノケミ
カルポリシングは、その加工圧力の上昇とともにＯＳＦ
密度も上昇する傾向にあり、従来の初期研磨方法は高圧
力領域でのポリシングであるため、ＯＳＦ密度を低いレ
ベルに押さえることが困難となる問題がある。That is, in the mechanochemical polishing, the OSF is increased as the processing pressure is increased.
The density also tends to increase, and since the conventional initial polishing method is polishing in a high pressure region, there is a problem that it is difficult to suppress the OSF density to a low level.
【０００５】また、メカノケミカルポリシングは、その
加工圧力の上昇とともにシリコンウェーハの表面精度
（Ｆｌａｔｎｅｓｓ：ＴＴＶ）が低下する傾向にあり、
従来の初期研磨方法の高圧力領域でのポリシングではシ
リコンウェーハの表面精度をより高精度に表面研磨する
ことが困難となる問題がある。Further, in the mechanochemical polishing, the surface accuracy (Flatness: TTV) of the silicon wafer tends to decrease as the processing pressure increases,
There is a problem that it is difficult to polish the surface precision of the silicon wafer with higher precision by polishing in the high pressure region of the conventional initial polishing method.
【０００６】今日、半導体用シリコンウェーハの製造に
際して、高い生産効率の要求とともに集積回路の著しい
高密度化と微細パターン化のために、すぐれた表面精度
とＯＳＦ密度の低減の要求が極めて高くなっている。In the production of silicon wafers for semiconductors today, demands for high surface efficiency and reduction in OSF density have become extremely high due to the demand for high production efficiency and the extremely high density and fine patterning of integrated circuits. There is.
【０００７】この発明は、半導体用シリコンウェーハの
製造に際して、前記問題点であるＯＳＦ密度の低減、表
面精度の向上を図ると同時に生産性向上を図った研磨方
法の提供を目的としている。It is an object of the present invention to provide a polishing method for reducing the OSF density and improving the surface accuracy, which are the above problems when manufacturing a silicon wafer for semiconductors, and at the same time improve productivity.
【０００８】[0008]
【課題を解決するための手段】この発明は、半導体用シ
リコンウェーハの製造に際してメカノケミカルポリシン
グ初期研磨にて必要とする形状、厚みにポリシングした
のち、ファイナルポリシングを施し、加工歪の少ない高
精度な鏡面を得る研磨方法において、メカノケミカルポ
リシングの初期研磨工程で、少なくとも２段階の研磨圧
力差を設けて多段研磨を行うに際して、少なくとも最終
段階で最も低圧力による研磨を行うことを特徴とする半
導体用シリコンウェーハの研磨方法である。SUMMARY OF THE INVENTION The present invention is a high-precision machine with less processing strain after polishing to the required shape and thickness in the initial polishing of mechanochemical polishing in the production of silicon wafers for semiconductors. In a polishing method for obtaining a mirror surface, in the initial polishing step of mechanochemical polishing, when performing a multi-stage polishing by providing a polishing pressure difference of at least two stages, at least the final stage of polishing is performed with the lowest pressure. This is a polishing method for a silicon wafer.
【０００９】また、この発明は上記の構成において、 １）高圧力領域での研磨を所要時間施し、 ２）同一研磨装置にてダイヤモンドドレッサーによる研
磨布の経時変化の修正を施した後、 ３）低圧力領域での研磨を一定時間施すことを特徴とす
る半導体用シリコンウェーハの研磨方法である。Further, according to the present invention, in the above structure, 1) polishing is performed in a high pressure region for a required time, 2) after the polishing cloth is corrected with a diamond dresser in the same polishing apparatus, and then 3). It is a method of polishing a silicon wafer for semiconductors, which comprises performing polishing in a low pressure region for a certain period of time.
【００１０】さらに、この発明は上記の低圧力領域での
研磨において、研摩液温度を一定に保持することを特徴
とする半導体用シリコンウェーハの研磨方法である。Further, the present invention is a method of polishing a silicon wafer for semiconductors, characterized in that the polishing liquid temperature is kept constant in the above-mentioned polishing in the low pressure region.
【００１１】この発明は、メカノケミカルポリシング初
期研磨工程において、ＯＳＦ密度の低減、表面精度の向
上、生産性向上を図ることを目的に、研磨工程を少なく
とも高圧領域と低圧領域の多段研磨となすことを要旨と
し、低圧研磨を施すことによりＯＳＦ密度の低減を図る
もので、低圧力領域でのポリシングは従来の高圧力研磨
に比して生産性低減につながるが、これを解決するため
に多段研磨中に従来よりさらに高圧力領域のポリシング
を施し、生産性向上を図るものである。According to the present invention, in the initial polishing step of mechanochemical polishing, the polishing step is a multi-step polishing of at least a high pressure region and a low pressure region for the purpose of reducing the OSF density, improving the surface accuracy and improving the productivity. In order to reduce the OSF density by performing low pressure polishing, polishing in the low pressure region leads to a reduction in productivity as compared to conventional high pressure polishing. It is intended to improve productivity by polishing in a higher pressure area than before.
【００１２】従って、この発明は、初期研磨工程で、少
なくとも高圧領域と低圧領域の２段階の圧力差を設けて
多段研磨を行い、その最終段階で最も低圧力による研磨
を施すことができれば、圧力差の選定、研磨段数、研磨
時間、圧力と研磨順序の選定組合せなどは任意に選定で
きるが、例えば、全研磨量を高圧領域と低圧領域にどの
ように割り振るかは圧力差の選定とともに、要求される
ＯＳＦ密度、表面精度、生産性を考慮する必要がある。Therefore, according to the present invention, in the initial polishing step, multistage polishing is performed by providing at least a two-stage pressure difference between a high pressure region and a low pressure region, and if the polishing can be performed at the lowest pressure in the final stage, the pressure will be reduced. The selection of the difference, the number of polishing steps, the polishing time, the selected combination of the pressure and the polishing order, etc. can be arbitrarily selected.For example, how to allocate the total polishing amount to the high pressure region and the low pressure region is required together with the selection of the pressure difference. It is necessary to consider the OSF density, surface accuracy, and productivity to be used.
【００１３】また、高圧領域と低圧領域の２段研磨、高
圧領域、中圧領域、低圧領域の３段研磨などの研摩順序
の選定組合せのほか、例えばポリッシャーの回転速度、
ラッピング液種類などの変動や変更を適宜組み合せるこ
ともでき、ＯＳＦ密度の低減、表面精度の向上、生産性
向上を図ることができる。Further, in addition to a selected combination of polishing sequences such as two-stage polishing of high pressure region and low pressure region, three-stage polishing of high pressure region, medium pressure region and low pressure region, for example, a rotation speed of a polisher,
It is also possible to appropriately combine variations and changes in the type of lapping liquid, and it is possible to reduce the OSF density, improve the surface accuracy, and improve the productivity.
【００１４】この発明において、圧力差の選定は任意に
選定できるが、例えば、ウエーハに与える歪み量と加工
能率を考慮して、従来の選定圧力に対して１０％〜５０
％高い研磨圧力の高圧領域と１０％〜５０％低減させた
研磨圧力の低圧領域を選定し、全研磨量の７０〜９０％
を高圧力領域にて加工する方法は、ＯＳＦ密度の低減、
表面精度の向上、生産性向上のいずれの点から最も好ま
しい実施態様である。さらに、高圧領域と低圧領域の圧
力差を相対的に７５％以上の差となるように設定するこ
とも好ましい実施態様であり、全研磨量の７０〜９０％
を高圧領域で一気に研磨後、超低圧で長時間研磨するこ
ともできる。In the present invention, the pressure difference can be selected arbitrarily. For example, considering the amount of strain applied to the wafer and the processing efficiency, the pressure difference is 10% to 50% of the conventional selected pressure.
% High pressure area of high polishing pressure and low pressure area of polishing pressure reduced by 10% to 50% are selected, and 70 to 90% of the total polishing amount is selected.
The method of processing in the high pressure region is to reduce the OSF density,
It is the most preferable embodiment from the viewpoint of improving the surface accuracy and improving the productivity. Furthermore, it is also a preferred embodiment to set the pressure difference between the high pressure region and the low pressure region to be a relative difference of 75% or more, which is 70 to 90% of the total polishing amount.
It is also possible to polish at once in a high-pressure region and then polish at ultra-low pressure for a long time.
【００１５】またこの発明において、低圧力領域でのポ
リッシングにてより高精度な表面精度を得るために、高
圧力領域でのポリッシング後、ダイヤモンドドレッサー
による共摺りを実施し、高圧力領域での研磨布の経時変
化（目詰り）の修正を行なうことが望ましく、研磨布の
使用時間を考慮して共摺りの回数を増やすなどの手段を
施すことにより、研磨布の寿命を延ばすことができる。
なお、研磨布の目詰りの修正に代えて、研磨布を新品に
交換して必要に応じてダイヤモンドドレッサーによる共
摺りを行い、その後低圧力領域の研磨を実施することも
できる。Further, in the present invention, in order to obtain a higher surface accuracy in polishing in the low pressure region, after polishing in the high pressure region, co-sliding with a diamond dresser is carried out to polish in the high pressure region. It is desirable to correct the change with time (clogging) of the cloth, and the life of the polishing cloth can be extended by taking measures such as increasing the number of times of common sliding in consideration of the usage time of the polishing cloth.
Instead of correcting the clogging of the polishing cloth, the polishing cloth may be replaced with a new one and co-scraped with a diamond dresser as necessary, and then polishing in a low pressure region may be performed.
【００１６】ウエーハの表面研磨をよりよく向上させる
ために低圧領域の研磨時に、実施例に示す如き研磨温度
制御装置を用いて、研磨液温度に応じて研磨圧力を変動
させて、研磨温度を一定に制御する方法を採用すること
ができる。これは、研磨圧力を従来より低圧力にてポリ
シングすることにより、また、研磨温度をコントロール
することにより、シリコンウェーハの面内温度誤差を抑
制し、ケミカルエッチング量を均等にするとともに、ポ
リシング時のシリコンウェーハ外周部への研磨布の食込
みを抑制し、シリコンウェーハ面内の加工量を均一にす
ることが可能であるためである。低圧領域の研磨時の研
磨液温度は±１℃の範囲で一定に制御されることが好ま
しい。In order to improve the polishing of the surface of the wafer better, during polishing in a low pressure region, the polishing temperature is controlled according to the temperature of the polishing liquid by using the polishing temperature control device as shown in the embodiment. Can be adopted. This is because by polishing at a polishing pressure lower than before and by controlling the polishing temperature, the in-plane temperature error of the silicon wafer is suppressed, the chemical etching amount is made uniform, and at the time of polishing. This is because it is possible to suppress the polishing cloth from digging into the outer peripheral portion of the silicon wafer and make the processing amount within the surface of the silicon wafer uniform. The polishing liquid temperature during polishing in the low pressure region is preferably controlled to be constant within a range of ± 1 ° C.
【００１７】[0017]
【作用】この発明は、半導体用シリコンウェーハのメカ
ノケミカルポリシングの初期研磨において、少なくとも
２段の異なる研磨圧力を選定し、例えば、高圧力領域で
の研磨を全研磨量の７０〜９０％となるように施し、同
一研磨装置にてダイヤモンドドレッサーによる研磨布の
経時変化の修正を施した後、低圧力領域での研磨を所要
時間施すが、かかる工程により、高圧力領域で短時間で
予定の研磨の大半を完了させることができるため加工効
率がよく、その後の低圧力領域での研磨により、ＯＳＦ
密度の低減と表面精度の向上が達成でき、従来に比較し
て短時間でより表面性状のすぐれたシリコンウェーハを
得ることができる。さらに、低圧力領域での研磨時に研
磨液温度の一定制御を行うことにより、ケミカルエッチ
ングが安定してよりすぐれた表面性状が得られる。According to the present invention, at least two different polishing pressures are selected in the initial polishing of the mechanochemical polishing of the silicon wafer for semiconductor, and for example, the polishing in the high pressure region becomes 70 to 90% of the total polishing amount. The same polishing equipment is used to correct the change over time of the polishing cloth with the diamond dresser, and then polishing is performed in the low pressure region for the required time. The processing efficiency is good because most of the
A reduction in density and an improvement in surface accuracy can be achieved, and a silicon wafer having better surface properties can be obtained in a shorter time than ever before. Further, by performing constant control of the polishing liquid temperature during polishing in a low pressure region, chemical etching is stabilized and more excellent surface properties can be obtained.
【００１８】[0018]
【実施例】後述する構成の研磨装置を用いて、まず初段
研磨として従来の０．５ｋｇ／ｃｍ2よりも例えば１０
％〜５０％高い０．５５〜０．８ｋｇ／ｃｍ2の研磨圧
力にて、研磨レートの向上を図り、次いで高圧力領域の
ポリシングによる研磨布の経時変化をダイヤモンドドレ
ッサーによる共摺りにて修正を行ない、終段研磨として
従来よりも例えば１０％〜５０％低減させた０．２５〜
０．４５ｋｇ／ｃｍ2の研磨圧力にて表面処理を行な
う。EXAMPLES First, using the polishing apparatus having the structure described below, the initial stage polishing is, for example, 10 times as compared with the conventional 0.5 kg / cm 2.
% To 50% higher at a polishing pressure of 0.55 to 0.8 kg / cm 2 to improve the polishing rate, and then to correct the change over time of the polishing cloth due to polishing in the high pressure region by sanding with a diamond dresser. For example, 0.25 to 10% to 50% less than before as the final polishing.
Surface treatment is performed at a polishing pressure of 0.45 kg / cm 2 .
【００１９】ここでは、ＥＰウェーハをメカノケミカル
ポリシングにて一定厚みに加工する際、全加工厚みの７
０〜９０％を高圧力領域にて加工し、この加工量、加工
時間は、各ＥＰウェーハの厚みにて制御する。Here, when processing an EP wafer to a constant thickness by mechanochemical polishing, the total processing thickness of 7 is used.
0 to 90% is processed in the high pressure region, and the processing amount and processing time are controlled by the thickness of each EP wafer.
【００２０】この高圧力領域での研磨を施したのち低圧
領域での研磨を施すが、終段研磨ではウェーハ表面粗
さ、精度向上を図るために、後述の方法にて研磨圧力の
制抑を行ない、所要の目標温度±０．５℃以内に研磨布
表面温度を維持して、研磨液温度を一定に保持しながら
低圧領域での研磨を行う。After polishing in the high pressure region, polishing in the low pressure region is performed. In the final stage polishing, the polishing pressure is suppressed by the method described later in order to improve the surface roughness and accuracy of the wafer. The surface temperature of the polishing pad is maintained within the required target temperature ± 0.5 ° C., and polishing is performed in the low pressure region while keeping the polishing liquid temperature constant.
【００２１】図１に示す研磨装置は、ウエーハ４が貼着
された上定盤５を圧空シリンダ１３で押圧して回転する
加圧ヘッドに装着して、回転テーブル１に載置され研磨
布３が貼り付けられた下定盤２に当接させて研磨剤を介
して相対回転運動させる構成からなる。In the polishing apparatus shown in FIG. 1, an upper surface plate 5 to which a wafer 4 is attached is attached to a pressure head that rotates by pressing with an air pressure cylinder 13, and the polishing cloth 3 is placed on a rotary table 1. Is brought into contact with the lower surface plate 2 to which is adhered, and relative rotation is performed via an abrasive.
【００２２】非接触式温度計１０は回転テーブル１の回
転中心近傍の研磨布３表面温度を測定して、測定値を電
圧信号に変換して温度コントローラー１１に出力する。
温度コントローラー１１では、予め設定した目標温度と
を比較して所要加圧力を演算し、現在の加圧力との差に
基づいて、圧空シリンダ１３へ送る圧空量を決定して圧
空量を電気的に制御する電空レギュレーター１２ヘ制御
電流信号を送る。電空レギュレーター１２は温度コント
ローラー１１からの制御電流信号に従い、圧空シリンダ
１３へ制御エアーを送り上定盤５の加圧力を所要値に変
更する。The non-contact type thermometer 10 measures the surface temperature of the polishing cloth 3 near the center of rotation of the rotary table 1, converts the measured value into a voltage signal and outputs it to the temperature controller 11.
The temperature controller 11 compares a preset target temperature to calculate a required pressurizing force, and based on the difference from the current pressurizing force, determines the amount of compressed air to be sent to the pneumatic cylinder 13 to electrically determine the amount of compressed air. A control current signal is sent to the electropneumatic regulator 12 for control. The electropneumatic regulator 12 sends control air to the pneumatic cylinder 13 according to the control current signal from the temperature controller 11 to change the pressure of the upper surface plate 5 to a required value.
【００２３】この発明による研磨方法によれば、例えば
高圧力領域として０．８ｋｇ／ｃｍ2の研磨圧力、低圧
力領域として０．３ｋｇ／ｃｍ2の研磨圧力を選定した
場合、ＯＳＦ密度を従来よりも５０％低減できると同時
に、表面精度においても従来よりも２５％の表面精度
（Ｆｌａｔｎｅｓｓ）が向上した。また、研磨レートの
向上を図っているため、初期研磨の全研磨時間を従来よ
り２０％短縮することが可能となり、生産性の向上さら
には、消耗資材ライフの向上が可能となった。According to the polishing method according to the invention, for example, a polishing pressure of 0.8 kg / cm 2 as a high pressure area, when the selected polishing pressure of 0.3 kg / cm 2 as a low pressure area, conventionally the OSF density The surface accuracy can be reduced by 50%, and at the same time, the surface accuracy (Flatness) is improved by 25% as compared with the conventional one. Further, since the polishing rate is improved, the total polishing time of the initial polishing can be shortened by 20% as compared with the conventional method, and the productivity can be further improved and the consumable life can be improved.
【００２４】[0024]
【発明の効果】この発明は、実施例に明らかなように、
低圧力領域での研磨によるＯＳＦ密度低減と表面精度、
粗さの向上が得られ、さらに高圧力領域での研磨と低圧
力領域での研磨の組合せの多段研磨による、生産性向上
並びに消耗資材ライフの向上が得られる。The present invention, as is apparent from the examples,
OSF density reduction and surface accuracy by polishing in low pressure region,
Roughness can be improved, and productivity and consumable material life can be improved by multi-step polishing which is a combination of polishing in a high pressure region and polishing in a low pressure region.
【図１】この発明による研磨方法を示す、研磨装置と制
御装置の説明図である。FIG. 1 is an explanatory view of a polishing apparatus and a control apparatus showing a polishing method according to the present invention.
１ 回転テーブル ２ 下定盤 ３ 研磨布 ４ ウエーハ ５ 上定盤 １０ 非接触式温度計 １１ 温度コントローラー １２ 電空レギュレーター １３ 圧空シリンダ 1 rotary table 2 lower surface plate 3 polishing cloth 4 wafer 5 upper surface plate 10 non-contact thermometer 11 temperature controller 12 electropneumatic regulator 13 compressed air cylinder
Claims (3)
てメカノケミカルポリシング初期研磨にて必要とする形
状、厚みにポリシングしたのち、ファイナルポリシング
を施し、加工歪の少ない高精度な鏡面を得る研磨方法に
おいて、メカノケミカルポリシングの初期研磨工程で、
少なくとも２段階の研磨圧力差を設けて多段研磨を行う
に際して、少なくとも最終段階で最も低圧力による研磨
を行うことを特徴とする半導体用シリコンウェーハの研
磨方法。1. In a polishing method for obtaining a highly precise mirror surface with less processing distortion, after polishing to a shape and thickness required for initial polishing of mechanochemical polishing in the production of silicon wafers for semiconductors, final polishing is performed to obtain a highly accurate mirror surface. In the initial polishing process of chemical polishing,
A method of polishing a silicon wafer for semiconductors, which comprises performing polishing at the lowest pressure at least in the final stage when performing multi-stage polishing by providing at least two stages of polishing pressure differences.
て、同一研磨装置にてダイヤモンドドレッサーによる研
磨布の経時変化の修正を施すことを特徴とする請求項１
記載の半導体用シリコンウェーハの研磨方法。2. Prior to the polishing with a low pressure in the final stage, the change of the polishing cloth with time is corrected by a diamond dresser in the same polishing apparatus.
A method for polishing a silicon wafer for semiconductor according to the above.
度を一定に保持することを特徴とする請求項１、請求項
２記載の半導体用シリコンウェーハの研磨方法。3. The method for polishing a silicon wafer for semiconductor according to claim 1, wherein the polishing liquid temperature is kept constant during polishing in a low pressure region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3359170A JP3052517B2 (en) | 1991-12-27 | 1991-12-27 | Polishing method of silicon wafer for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3359170A JP3052517B2 (en) | 1991-12-27 | 1991-12-27 | Polishing method of silicon wafer for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05177534A true JPH05177534A (en) | 1993-07-20 |
| JP3052517B2 JP3052517B2 (en) | 2000-06-12 |
Family
ID=18463105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3359170A Expired - Fee Related JP3052517B2 (en) | 1991-12-27 | 1991-12-27 | Polishing method of silicon wafer for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3052517B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0757378A1 (en) * | 1995-08-01 | 1997-02-05 | Shin-Etsu Handotai Co., Ltd. | Process of polishing silicon wafers |
| JP2005260038A (en) * | 2004-03-12 | 2005-09-22 | Disco Abrasive Syst Ltd | Polishing apparatus |
| JP2006216895A (en) * | 2005-02-07 | 2006-08-17 | Disco Abrasive Syst Ltd | Semiconductor wafer polishing device |
-
1991
- 1991-12-27 JP JP3359170A patent/JP3052517B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0757378A1 (en) * | 1995-08-01 | 1997-02-05 | Shin-Etsu Handotai Co., Ltd. | Process of polishing silicon wafers |
| JP2005260038A (en) * | 2004-03-12 | 2005-09-22 | Disco Abrasive Syst Ltd | Polishing apparatus |
| JP4631021B2 (en) * | 2004-03-12 | 2011-02-16 | 株式会社ディスコ | Polishing equipment |
| JP2006216895A (en) * | 2005-02-07 | 2006-08-17 | Disco Abrasive Syst Ltd | Semiconductor wafer polishing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3052517B2 (en) | 2000-06-12 |
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