JPH06170728A - Hard brittle thin plate polishing method - Google Patents
Hard brittle thin plate polishing methodInfo
- Publication number
- JPH06170728A JPH06170728A JP32089592A JP32089592A JPH06170728A JP H06170728 A JPH06170728 A JP H06170728A JP 32089592 A JP32089592 A JP 32089592A JP 32089592 A JP32089592 A JP 32089592A JP H06170728 A JPH06170728 A JP H06170728A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- abrasive grain
- temperature
- thin plate
- supply amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は硬脆薄板の研磨方法、詳
しくは石英マスク基板、半導体シリコンウエハ等の硬脆
薄板をラッピングあるいはポリッシングする研磨方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for polishing a hard brittle thin plate, and more particularly to a method for lapping or polishing a hard brittle thin plate such as a quartz mask substrate or a semiconductor silicon wafer.
【０００２】[0002]
【従来の技術】従来、硬脆薄板の研磨に関し図１に示す
研磨機１０が使用されている。すなわち、研磨機１０は
上下両定盤を具備する研磨部１を有し、該研磨部１の下
定盤を回転駆動させる主モーター２及び上定盤の下向き
押圧力が調整される昇降部３を備えるとともに、研磨部
１へ砥粒（スラリー）を供給循環させるポンプ４ａ、タ
ンク４ｂを含む砥粒系路４を備えている。2. Description of the Related Art Conventionally, a polishing machine 10 shown in FIG. 1 has been used for polishing a hard brittle thin plate. That is, the polishing machine 10 has a polishing unit 1 having upper and lower surface plates, and a main motor 2 for rotating the lower surface plate of the polishing unit 1 and an elevating unit 3 for adjusting the downward pressing force of the upper surface plate. In addition to the above, an abrasive grain system path 4 including a pump 4a for supplying and circulating abrasive grains (slurry) to the polishing section 1 and a tank 4b is provided.
【０００３】上記研磨機１０においては、研磨速度を適
正な一定値に確保することが加工条件を決定する上で重
要であり、研磨速度が高すぎる場合には製品厚さのムラ
（総合厚さムラ：ＴＴＶ）が大きく製品の平坦度を維持
し得ず、また研磨速度が低すぎる場合には研磨時間が延
びて生産性が低下する原因となる。しかも上記研磨速度
に大きな影響を与える要素として、砥粒温度や研磨機の
回転速度が関連することが知られているが、砥粒の供給
量と研磨速度との関係については何ら分析、解明されて
はいなかった。In the polishing machine 10, it is important to secure the polishing rate at an appropriate constant value in determining the processing conditions, and when the polishing rate is too high, unevenness in product thickness (total thickness) The unevenness: TTV) is large, the flatness of the product cannot be maintained, and when the polishing rate is too low, the polishing time is extended and the productivity is reduced. Moreover, it is known that the temperature of the abrasive grains and the rotation speed of the polishing machine are related as a factor that greatly affects the polishing rate, but any analysis and elucidation of the relationship between the abrasive grain supply amount and the polishing rate has been made. Was not there.
【０００４】しかるに従来は、研磨機１０を使用する硬
脆薄板の研磨作業に際し、砥粒供給量を試行錯誤的に変
化させながら、製品の仕上がり具合を確認して適正値を
見出す作業をしており、そのために生産性が著しく低い
とともに、経時的に前記ＴＴＶが悪化するなど安定した
加工精度の維持が困難であるという不具合がみられた。Conventionally, however, when polishing a hard and brittle thin plate using the polishing machine 10, the amount of abrasive grains supplied is changed by trial and error while confirming the finished state of the product and finding an appropriate value. Therefore, there is a problem that productivity is remarkably low and it is difficult to maintain stable processing accuracy such that the TTV deteriorates over time.
【０００５】[0005]
【発明が解決しようとする課題】本発明は上記従来事情
に鑑み、砥粒に及ぼす外的条件が砥粒の供給量と研磨速
度との関係で大きな要素となっていることを知り、それ
らのデータに基づいて加工条件を制御することによっ
て、従来不具合を解消し生産性及び加工精度の高い研磨
方法を提供することを目的とする。In view of the above-mentioned conventional circumstances, the present invention has found that the external condition exerted on the abrasive grains is a major factor in the relationship between the abrasive grain supply amount and the polishing rate. An object of the present invention is to provide a polishing method which eliminates conventional problems and has high productivity and high processing accuracy by controlling processing conditions based on data.
【０００６】[0006]
【課題を解決するための手段】斯る本発明の研磨方法
は、研磨機に研磨抵抗の検出器および砥粒の温度検出器
を配設し、両検出器の検出データに基づいて砥粒供給量
が決定され、研磨速度を制御しながら硬脆薄板を研磨す
ることを特徴とする。According to the polishing method of the present invention, a polishing resistance detector and an abrasive grain temperature detector are provided in a polishing machine, and abrasive grains are supplied based on the detection data of both detectors. The amount is determined, and the hard brittle thin plate is polished while controlling the polishing rate.
【０００７】[0007]
【作用】本発明によれば、研磨機の研磨速度に影響を及
ぼす要素として砥粒供給量があるが、砥粒温度が砥粒供
給量と密接に関連するとともに砥粒温度は研磨抵抗によ
って変化することから、研磨抵抗および砥粒温度がデー
タとして所定範囲内となるように砥粒供給量を増減さ
せ、研磨速度を制御して適正な一定値に確保することが
できる。According to the present invention, the abrasive grain supply amount is a factor that affects the polishing rate of the polishing machine. The abrasive grain temperature is closely related to the abrasive grain supply amount, and the abrasive grain temperature changes depending on the polishing resistance. Therefore, it is possible to increase / decrease the abrasive grain supply amount so that the polishing resistance and the abrasive grain temperature are within a predetermined range as data, and control the polishing rate to ensure an appropriate constant value.
【０００８】[0008]
【実施例】図１はマスク基板をラッピングする研磨機１
０の場合を示し、図において前述した主モーター２に
は、該モーター２の負荷値（電流値：Ａ）を検出する負
荷検出器１１を配設し、前記砥粒系路４にはできるだけ
研磨部１に近接する側に砥粒の温度を検出する温度検出
器１２を配設する。上記抵抗検出器１１はモーター２の
電流値を検出するものであるが、研磨部１における研磨
抵抗と実質的に比例関係にあり、間接的ではあるが研磨
抵抗を検出している。EXAMPLE FIG. 1 shows a polishing machine 1 for lapping a mask substrate.
The load detector 11 for detecting the load value (current value: A) of the motor 2 is provided in the main motor 2 described above in the figure, and the abrasive grain path 4 is ground as much as possible. A temperature detector 12 for detecting the temperature of the abrasive grains is arranged on the side close to the portion 1. The resistance detector 11 detects the current value of the motor 2, and is substantially proportional to the polishing resistance of the polishing section 1 and indirectly detects the polishing resistance.
【０００９】抵抗検出器１１および温度検出器１２はそ
れぞれ制御装置１３へ接続されて、各検出器１１，１２
で検出された負荷データａ，温度データｂを制御装置１
３へ送信する。制御装置１３は前記砥粒系路４のポンプ
４ａに接続され、前記負荷データａ，温度データｂに基
づき、該データが所定値又は範囲内にないときに砥粒供
給量を増減させるようポンプ４ａの吐出量を制御させ
る。The resistance detector 11 and the temperature detector 12 are respectively connected to the control device 13, and the detectors 11 and 12 are connected to each other.
The load data a and the temperature data b detected by the controller 1
Send to 3. The controller 13 is connected to the pump 4a of the abrasive grain path 4, and based on the load data a and the temperature data b, the pump 4a increases or decreases the abrasive grain supply amount when the data is not within a predetermined value or range. Control the discharge amount of.
【００１０】ここで、研磨速度、砥粒供給量、砥粒温度
およびモーター負荷値の関係について考察する（図
２）。Here, the relationship among the polishing rate, the amount of abrasive grains supplied, the temperature of abrasive grains, and the motor load value will be considered (FIG. 2).
【００１１】研磨速度と砥粒供給量との関係（図２
（ａ）） 砥粒温度がある程度安定している場合において、砥粒供
給量が少ないときは研磨速度が高く、供給量の増量につ
れて研磨速度が低くなる。そして研磨速度が高すぎる場
合には前記ＴＴＶが大きく製品の平坦度を維持し得ず、
また研磨速度が低すぎる場合には研磨時間が延びて生産
性が低下することになる（図３）。The relationship between the polishing rate and the amount of abrasive grains supplied (see FIG. 2).
(A) When the abrasive grain temperature is stable to some extent, the polishing rate is high when the abrasive grain supply amount is small, and the polishing rate decreases as the supply amount increases. If the polishing rate is too high, the TTV is large and the flatness of the product cannot be maintained.
On the other hand, if the polishing rate is too low, the polishing time will be extended and the productivity will be reduced (FIG. 3).
【００１２】研磨速度と砥粒温度との関係（図２
（ｂ）） 砥粒温度が低いときは研磨速度が低く、砥粒温度の上昇
につれて研磨速度が高くなる。従って、この砥粒温度が
低すぎても、高すぎても好ましくない。この砥粒温度の
昇降変化には次のモーター負荷値および砥粒供給量が関
係する。Relationship between polishing speed and abrasive grain temperature (see FIG. 2)
(B)) The polishing rate is low when the abrasive grain temperature is low, and increases as the abrasive grain temperature rises. Therefore, it is not preferable that the temperature of the abrasive grains is too low or too high. The following motor load value and abrasive grain supply amount are related to the change of the abrasive grain temperature up and down.
【００１３】モーター負荷値と砥粒温度との関係（図２
（ｃ）） モーター負荷値すなわち研磨抵抗が小さいときは砥粒温
度が低く、研磨抵抗が大きくなると砥粒温度が高くな
る。換言すれば砥粒温度が高いときは研磨抵抗が大き
く、砥粒温度が低くなると研磨抵抗が小さくなる。従っ
て、モーター負荷値が高すぎる場合は砥粒温度の上昇に
伴って研磨速度が高くなり過ぎ好ましくなく、このモー
ター負荷値（研磨抵抗）及び砥粒温度を要素として研磨
速度の管理が可能であることが理解される。Relationship between motor load value and abrasive grain temperature (see FIG. 2)
(C)) When the motor load value, that is, the polishing resistance is small, the abrasive grain temperature is low, and when the polishing resistance is large, the abrasive grain temperature is high. In other words, the polishing resistance is high when the abrasive grain temperature is high, and the polishing resistance is low when the abrasive grain temperature is low. Therefore, when the motor load value is too high, the polishing rate becomes too high as the abrasive grain temperature rises, which is not preferable, and the polishing rate can be controlled by using the motor load value (polishing resistance) and the abrasive grain temperature as factors. Be understood.
【００１４】砥粒温度と砥粒供給量との関係（図２
（ｄ）） 砥粒供給量が少ないときは砥粒温度が高く、砥粒供給量
を増量すれば砥粒温度は下降する。従って、砥粒供給量
の増減により砥粒温度および研磨抵抗を下げ、又は上げ
ることが可能である。Relationship between abrasive grain temperature and abrasive grain supply amount (see FIG. 2)
(D)) The abrasive grain temperature is high when the abrasive grain supply amount is small, and the abrasive grain temperature decreases when the abrasive grain supply amount is increased. Therefore, it is possible to decrease or increase the abrasive grain temperature and the polishing resistance by increasing or decreasing the abrasive grain supply amount.
【００１５】上記ＴＴＶの良否判断に関し、研磨された
製品（マスク基板）の断面全体の厚さが均一に仕上がっ
ている状態をＴＴＶが良（小さい）といい（図４
（ａ））、製品に外周ダレを生じている如く厚さムラが
ある状態をＴＴＶが悪化（大きい）という（図４
（ｂ））。Regarding the quality judgment of TTV, the state where the thickness of the whole cross section of the polished product (mask substrate) is finished uniformly is called TTV good (small) (FIG. 4).
(A)) TTV is said to be worse (large) when the product has uneven thickness such that the outer periphery is sagging (Fig. 4).
(B)).
【００１６】而して上記実施例においては、前記制御装
置１３には予めモーター負荷値の設定値として、例えば
５５Ａ又は（５０〜５５）Ａを入力しておき、砥粒温度
の設定値として、例えば４３度又は（４０〜４３）度を
入力しておく。そして、上記抵抗検出器１１からの負荷
データａ又は温度検出器１２からの温度データｂが前記
設定値にあるときは、そのままの加工条件で研磨機１０
を続行させるが、前記設定値から外れたときには制御装
置１３が前記砥粒系路４のポンプ４ａを制御して砥粒供
給量を増減させ設定値に近づくようにする。すなわち、
負荷データａ又は温度データｂが前記設定値未満のとき
は砥粒供給量が減量するように、又前記設定値を越えて
いるときは砥粒供給量が増量するようにポンプ４ａの駆
動を制御する。これによって研磨機１０の研磨速度を、
図３に示すように前記ＴＴＶが良なるとともに生産性を
確保できる範囲（例えば、０．３〜０．５μｍ／min ）
に制御することができる。In the above embodiment, therefore, 55 A or (50 to 55) A, which is a preset value of the motor load value, is input to the control device 13 in advance, and the preset value of the abrasive grain temperature is set as follows. For example, 43 degrees or (40 to 43) degrees is input. When the load data a from the resistance detector 11 or the temperature data b from the temperature detector 12 is at the set value, the polishing machine 10 is used under the same processing conditions.
When the value deviates from the set value, the control device 13 controls the pump 4a of the abrasive grain path 4 to increase or decrease the abrasive grain supply amount so as to approach the set value. That is,
The drive of the pump 4a is controlled so that the abrasive grain supply amount is decreased when the load data a or the temperature data b is less than the set value, and the abrasive grain supply amount is increased when the load data a or the temperature data b exceeds the set value. To do. As a result, the polishing rate of the polishing machine 10 is
As shown in FIG. 3, a range in which the TTV is good and productivity can be secured (for example, 0.3 to 0.5 μm / min).
Can be controlled.
【００１７】尚、図２及び３に示すデータ値はある１つ
の硬脆薄板を研磨する場合の例示であって、材料や形状
の違う硬脆薄板を研磨する場合には前述した負荷データ
ａ又は温度データｂの設定値を適宜に変更することは任
意である。The data values shown in FIGS. 2 and 3 are examples of polishing one hard brittle thin plate, and when polishing a hard brittle thin plate having a different material or shape, the load data a or It is arbitrary to appropriately change the set value of the temperature data b.
【００１８】[0018]
【効果】本発明によれば、研磨速度を適正な一定値に自
動的に確保することができるので、マスク基板など硬脆
薄板の平坦度を維持して加工精度を高めるとともに、研
磨時間を短縮を図り生産性を高めることができる。[Effects] According to the present invention, since the polishing rate can be automatically secured at an appropriate constant value, the flatness of the hard and brittle thin plate such as the mask substrate can be maintained to improve the processing accuracy and shorten the polishing time. And productivity can be improved.
【図１】本発明を実施する研磨機の概略を示すブロック
図FIG. 1 is a block diagram showing an outline of a polishing machine for carrying out the present invention.
【図２】研磨速度、砥粒供給量、砥粒温度およびモータ
ー負荷値の関係を示すグラフFIG. 2 is a graph showing a relationship between a polishing rate, an abrasive grain supply amount, an abrasive grain temperature, and a motor load value.
【図３】研磨速度とＴＴＶとの関係を示すグラフFIG. 3 is a graph showing the relationship between polishing rate and TTV.
【図４】ＴＴＶの良否を説明する製品の断面図FIG. 4 is a sectional view of a product for explaining the quality of TTV.
１０……研磨機 １１……負荷検出器 １２……温度検出器 １３……制御装置 10 ... Polishing machine 11 ... Load detector 12 ... Temperature detector 13 ... Control device
Claims (2)
度検出器を配設し、両検出器の検出データに基づいて砥
粒供給量が決定され、研磨速度を制御しながら硬脆薄板
を研磨することを特徴とする硬脆薄板の研磨方法。1. A polishing machine is provided with a polishing resistance detector and an abrasive grain temperature detector, and the abrasive grain supply amount is determined based on the detection data of both detectors. A method for polishing a hard and brittle thin plate, which comprises polishing a thin plate.
動用モーターの負荷値（Ａ）を検出するものである請求
項１記載の硬脆薄板の研磨方法。2. The method for polishing a hard brittle thin plate according to claim 1, wherein the polishing resistance detector detects a load value (A) of a rotation driving motor of the polishing machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32089592A JPH06170728A (en) | 1992-11-30 | 1992-11-30 | Hard brittle thin plate polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32089592A JPH06170728A (en) | 1992-11-30 | 1992-11-30 | Hard brittle thin plate polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06170728A true JPH06170728A (en) | 1994-06-21 |
Family
ID=18126470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32089592A Pending JPH06170728A (en) | 1992-11-30 | 1992-11-30 | Hard brittle thin plate polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06170728A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998011600A1 (en) * | 1996-09-13 | 1998-03-19 | Hitachi, Ltd. | Method for working semiconductor wafer |
| US5851846A (en) * | 1994-12-22 | 1998-12-22 | Nippondenso Co., Ltd. | Polishing method for SOI |
| JP2014138973A (en) * | 2013-01-21 | 2014-07-31 | Asahi Glass Co Ltd | Polishing method, fabricating method, and polishing device for glass substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61188071A (en) * | 1985-02-14 | 1986-08-21 | Nec Corp | Polishing method of wafer |
| JPH0366565A (en) * | 1989-08-04 | 1991-03-22 | Kyushu Electron Metal Co Ltd | Polishing method for semiconductor wafer |
-
1992
- 1992-11-30 JP JP32089592A patent/JPH06170728A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61188071A (en) * | 1985-02-14 | 1986-08-21 | Nec Corp | Polishing method of wafer |
| JPH0366565A (en) * | 1989-08-04 | 1991-03-22 | Kyushu Electron Metal Co Ltd | Polishing method for semiconductor wafer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851846A (en) * | 1994-12-22 | 1998-12-22 | Nippondenso Co., Ltd. | Polishing method for SOI |
| WO1998011600A1 (en) * | 1996-09-13 | 1998-03-19 | Hitachi, Ltd. | Method for working semiconductor wafer |
| JP2014138973A (en) * | 2013-01-21 | 2014-07-31 | Asahi Glass Co Ltd | Polishing method, fabricating method, and polishing device for glass substrate |
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