JPH05175085A - Chip-shaped solid electrolytic capacitor - Google Patents
Chip-shaped solid electrolytic capacitorInfo
- Publication number
- JPH05175085A JPH05175085A JP34526791A JP34526791A JPH05175085A JP H05175085 A JPH05175085 A JP H05175085A JP 34526791 A JP34526791 A JP 34526791A JP 34526791 A JP34526791 A JP 34526791A JP H05175085 A JPH05175085 A JP H05175085A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- anode
- metal body
- solid electrolytic
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は漏れ電流特性の良好なチ
ップ状固体電解コンデンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip solid electrolytic capacitor having good leakage current characteristics.
【０００２】[0002]
【従来の技術】従来の積層型チップ状固体電解コンデン
サは、表面に誘電体酸化皮膜層を有するアルミニウム、
タンタル、ニオブ等の弁作用金属に半導体層及び導電体
層が順次形成されてコンデンサ素子を構成しており、こ
のコンデンサ素子は複数枚を一定の方向に揃えてリード
フレームに接続している。図３及び図４において、図４
に示したリードフレーム１の２カ所の互いに向きあった
凸部１ａ、１ｂに、図３の断面形状で示した複数枚のコ
ンデンサ素子２の陽極部３と導電体層形成部４を載置
し、前者は熔接等で、後者は銀ペースト等の導電材５で
リードフレーム１の凸部１ａ、１ｂに電気的かつ機械的
に接続した後、外装樹脂６で封止成形を行って作製され
た構造となっている。2. Description of the Related Art A conventional multilayer chip solid electrolytic capacitor is made of aluminum having a dielectric oxide film layer on its surface.
A semiconductor layer and a conductor layer are sequentially formed on a valve metal such as tantalum or niobium to form a capacitor element, and a plurality of capacitor elements are aligned in a certain direction and connected to a lead frame. 3 and 4, in FIG.
On the two projecting portions 1a and 1b facing each other of the lead frame 1 shown in FIG. 3, the anode portion 3 and the conductor layer forming portion 4 of the plurality of capacitor elements 2 shown in the sectional shape of FIG. 3 are placed. The former is made by welding and the latter is made by electrically and mechanically connecting to the protrusions 1a, 1b of the lead frame 1 with a conductive material 5 such as silver paste, and then sealing-molded with an exterior resin 6. It has a structure.
【０００３】[0003]
【発明が解決しようとする課題】しかし、前述したコン
デンサ素子の導電体層形成部には、半導体層及び導電体
層が形成されているため、陽極部よりも厚みが厚くな
る。このためこのコンデンサ素子を例えば陽極部が同一
方向になるように複数枚揃えて重ねた場合、導電体層形
成部と陽極部の厚みの差はより顕著になり、極端なとき
には、陽極部間にすきまが生じる。このようなすきまの
存在を防ぐためにすきまと同程度の厚みのスペーサーを
入れることも考えることができるが、スペーサーを陽極
部に確実に入れて位置合わせすることは煩雑で困難であ
った。However, since the semiconductor layer and the conductor layer are formed in the conductor layer forming portion of the above-described capacitor element, the thickness is larger than that of the anode portion. Therefore, for example, when a plurality of the capacitor elements are aligned and stacked so that the anode portions are in the same direction, the difference in thickness between the conductor layer forming portion and the anode portion becomes more remarkable. There is a gap. In order to prevent the existence of such a gap, it is possible to consider inserting a spacer having a thickness similar to that of the gap, but it has been complicated and difficult to surely insert the spacer into the anode portion for alignment.
【０００４】また、前述したリードフレームの一対の凸
部にコンデンサ素子の陽極部と導電体層形成部を載置す
るが、陽極部と導電体層形成部の厚みが異なるため、一
般にはリードフレームの一対の凸部の片方に段差を持た
せて前記した厚みの違いを無くすことも考えられている
が、コンデンサ素子の積層枚数が異なる毎に高価なリー
ドフレーム作製金型を用意しなければならなかった。ま
た上述したコンデンサ素子は、リードフレームのリード
端子の一部を残して外装樹脂で封止するが、陽極部は前
述したようなスペーサを入れたとしても陽極部の端面に
樹脂の成形圧がかかり、コンデンサ素子に応力を与えて
いる。この結果、作製した固体電解コンデンサの漏れ電
流値（以下ＬＣと略す。）が大きいという欠点があっ
た。Further, the anode part and the conductor layer forming part of the capacitor element are mounted on the pair of convex parts of the lead frame described above. However, since the anode part and the conductor layer forming part have different thicknesses, the lead frame is generally used. It is also considered to eliminate the above-mentioned difference in thickness by providing a step on one of the pair of convex portions, but an expensive lead frame manufacturing die must be prepared every time the number of laminated capacitor elements is different. There wasn't. In addition, the capacitor element described above is sealed with the exterior resin while leaving a part of the lead terminals of the lead frame, but even if the anode part is provided with the spacer as described above, the molding pressure of the resin is applied to the end surface of the anode part. , Stress is applied to the capacitor element. As a result, there is a drawback in that the produced solid electrolytic capacitor has a large leakage current value (hereinafter abbreviated as LC).
【０００５】[0005]
【課題を解決するための手段】本発明者は、上述した問
題点を解決するため鋭意研究した結果、複数の凹部が連
続して設けられたジグザグ状の金属体に複数枚のコンデ
ンサ素子の陽極部を収納し、コンデンサ素子の陽極部と
導電体層形成部の厚みをほぼ同一にすることによって、
作製した固体電解コンデンサはＬＣが大幅に改善される
ことを見い出し、本発明を完成させるに至った。As a result of intensive studies to solve the above-mentioned problems, the present inventor has conducted a zigzag-shaped metal body in which a plurality of concave portions are continuously provided and an anode of a plurality of capacitor elements. Part, and by making the thickness of the anode part of the capacitor element and the conductor layer forming part approximately the same,
It was found that the LC of the produced solid electrolytic capacitor was significantly improved, and the present invention was completed.
【０００６】本発明の要旨は、表面に誘電体酸化皮膜層
を有する板状の弁作用金属箔の端部を陽極部とし、この
金属箔の残部の前記誘電体酸化皮膜層上に半導体層、そ
の上に導電体層が順次形成された複数枚の固体電解コン
デンサ素子の前記陽極部が、複数の凹部を有するジグザ
グ状の金属体の凹部にそれぞれ収納されてこの金属体に
電気的に接続されており、前記固体電解コンデンサ素子
の導電体層と前記金属体にはリードフレームのリード端
子が接続されており、このリード端子の一部を残して外
装樹脂で封口されているチップ状固体電解コンデンサに
ある。The gist of the present invention is to use, as an anode part, an end of a plate-shaped valve action metal foil having a dielectric oxide film layer on its surface, and a semiconductor layer on the remaining dielectric oxide film layer of the metal foil, The positive electrode portions of a plurality of solid electrolytic capacitor elements on which conductive layers are sequentially formed are housed in the recesses of a zigzag metal body having a plurality of recesses and electrically connected to the metal bodies. A lead terminal of a lead frame is connected to the conductor layer of the solid electrolytic capacitor element and the metal body, and the chip solid electrolytic capacitor is sealed with an exterior resin leaving a part of the lead terminal. It is in.
【０００７】以下本発明について説明する。本発明にお
いて固体電解コンデンサの陽極として用いられる弁作用
を有する陽極基体としては、例えばアルミニウム、タン
タル、及びこれらを基質とする合金等、弁作用を有する
金属がいずれも使用できる。そして陽極基体の形状とし
ては、代表的には長方形状の箔があげられる。The present invention will be described below. As the anode substrate having a valve action which is used as the anode of the solid electrolytic capacitor in the present invention, any metal having a valve action such as aluminum, tantalum, and an alloy having these as a substrate can be used. The shape of the anode substrate is typically a rectangular foil.
【０００８】陽極基体の表面に設ける誘電体酸化皮膜層
は、弁作用金属箔の表面部分に設けられた弁作用金属箔
自体の酸化物層であってもよく、或は弁作用金属箔の表
面上に設けられた他の誘電体酸化物の層であってもよい
が、特に弁作用金属自体の酸化物からなる層であること
が望ましい。いずれの場合にも酸化物層を設ける方法と
しては、電解液を用いた陽極化成法など従来公知の方法
を用いることができる。The dielectric oxide film layer provided on the surface of the anode substrate may be an oxide layer of the valve action metal foil itself provided on the surface portion of the valve action metal foil, or the surface of the valve action metal foil. It may be a layer of another dielectric oxide provided above, but a layer made of an oxide of the valve metal itself is preferable. In any case, as a method for providing the oxide layer, a conventionally known method such as an anodization method using an electrolytic solution can be used.
【０００９】次いで本発明においては、陽極基体の周辺
を含む一部を端部と称して陽極部とし、残りの陽極基体
の誘電体酸化皮膜層上に半導体層、その上に導電体層を
順次形成して導電体層形成部が形成されている。形成さ
れる半導体層の種類には特に制限は無く、従来公知の半
導体層が使用できるが、とりわけ本願出願人の出願によ
る二酸化鉛または二酸化鉛と硫酸鉛からなる半導体層
（特開昭６２−２５６４２３号公報、特開昭６３−５１
６２１号公報）が作製した固体電解コンデンサの高周波
性能が良好なために好ましい。また、タリウムイオン及
び過硫酸イオンを含んだ反応母液から化学的に酸化第２
タリウムを半導体層として析出させる方法（特開昭６２
−３８７１５号公報）もその一例である。Next, in the present invention, a part including the periphery of the anode substrate is referred to as an end portion to form an anode portion, a semiconductor layer is formed on the dielectric oxide film layer of the remaining anode substrate, and a conductor layer is formed thereon. Then, a conductor layer forming portion is formed. The type of semiconductor layer to be formed is not particularly limited, and conventionally known semiconductor layers can be used. Particularly, a semiconductor layer composed of lead dioxide or lead dioxide and lead sulfate by the applicant of the present application (Japanese Patent Laid-Open No. 62-256423). JP-A-63-51
No. 621), the high frequency performance of the solid electrolytic capacitor is good, which is preferable. In addition, it is chemically oxidized from the reaction mother liquor containing thallium ions and persulfate ions.
Method for depositing thallium as a semiconductor layer
No. 38,715) is one such example.
【００１０】このような半導体層上には、例えばカーボ
ンペースト及び／または銀ペースト等の従来公知の導電
ペーストを積層して導電体層が形成されている。このよ
うにして作製されたコンデンサ素子は、図１に示したよ
うに陽極部３が同一方向になるように複数枚重ねられて
おり、各陽極部３を別に用意したジグザグ状の金属体７
の凹部に各々収納し、熔接等により電気的、機械的に一
体化されている。一方、各コンデンサ素子２の導電体層
形成部４は、複数枚を同一方向に重ねる前後に導電ペー
ストによって一体化しておいてもよい。導電ペーストに
よって一体化する手法として例えば、導電ペースト浴に
浸漬後、乾燥する方法が採用できる。On such a semiconductor layer, a conductor layer is formed by laminating a conventionally known conductive paste such as carbon paste and / or silver paste. As shown in FIG. 1, a plurality of the capacitor elements manufactured in this manner are stacked so that the anode parts 3 are in the same direction, and the zigzag-shaped metal body 7 in which the anode parts 3 are separately prepared is provided.
Each of them is housed in a concave portion and is electrically and mechanically integrated by welding or the like. On the other hand, the conductor layer forming portion 4 of each capacitor element 2 may be integrated with a conductive paste before and after stacking a plurality of sheets in the same direction. As a method of integrating with a conductive paste, for example, a method of dipping in a conductive paste bath and then drying can be adopted.
【００１１】前述した金属体７は帯状の金属箔をジグザ
グ状に折り曲げて容易に作製でき、その材質として、
鉄、ニッケル、銅及びこれらの合金等が使用できる。金
属体の厚み、幅、凹部のへこみ幅、ジグザグの回数等は
作製するコンデンサ素子の寸法、弁作用金属箔の厚み、
コンデンサ素子の積層数、リードフレームの形状によっ
て変わるため、予備実験によって決定される。The above-mentioned metal body 7 can be easily manufactured by bending a strip-shaped metal foil in a zigzag shape.
Iron, nickel, copper and alloys thereof can be used. The thickness and width of the metal body, the recess width of the recess, the number of zigzags, etc. are the dimensions of the capacitor element to be manufactured, the thickness of the valve action metal foil,
It depends on the number of stacked capacitor elements and the shape of the lead frame, and is determined by preliminary experiments.
【００１２】図１では、金属体の凹部を、弁作用金属箔
の長手方向に平行に配置した場合を示したが、長手方向
に直角に配置してもよい。また、金属体７とコンデンサ
素子２の導電体層形成部４との接触を避けるために、あ
らかじめ弁作用金属箔の陽極部となる部分の一部に絶縁
樹脂を塗布しておいてもよい。Although FIG. 1 shows the case where the recesses of the metal body are arranged parallel to the longitudinal direction of the valve action metal foil, they may be arranged at right angles to the longitudinal direction. In addition, in order to avoid contact between the metal body 7 and the conductor layer forming portion 4 of the capacitor element 2, an insulating resin may be applied in advance to a part of the portion of the valve action metal foil that serves as the anode portion.
【００１３】次に図２は、上述の積層化したコンデンサ
素子２を固体電解コンデンサのリード端子となるリード
フレーム１の互いに対向する一対の凸部１ａ、１ｂに載
置し、導電体層形成部４は導電材５である導電ペースト
によって凸部１ｂに、陽極部３と金属体７は熔接で凸部
１ａに接続されており、コンデンサ素子２の全体は外装
樹脂６で封口されている固体電解コンデンサの断面図で
ある。リードフレーム１の凸部１ａ、１ｂの形状が段差
を有するものであっても、前述したジグザグ状の金属体
の凹部のうち、コンデンサ素子の陽極部を収納しない凹
部をあらかじめ設けておいてこの個数を選択することに
より、コンデンサ素子の陽極部と導電体層形成部の厚み
の違いを無くすことが可能である。Next, in FIG. 2, the laminated capacitor element 2 is placed on a pair of convex portions 1a, 1b facing each other of a lead frame 1 which is a lead terminal of a solid electrolytic capacitor, and a conductor layer forming portion is formed. Reference numeral 4 is connected to the convex portion 1b by the conductive paste which is the conductive material 5, and the anode portion 3 and the metal body 7 are connected to the convex portion 1a by welding, and the entire capacitor element 2 is sealed by the exterior resin 6. It is sectional drawing of a capacitor. Even if the projections 1a and 1b of the lead frame 1 have steps, the number of the recesses of the zigzag-shaped metal body, which do not accommodate the anode part of the capacitor element, are provided in advance. By selecting, it is possible to eliminate the difference in thickness between the anode part and the conductor layer forming part of the capacitor element.
【００１４】以上のようにしてリードフレームに接続さ
れた固体電解コンデンサ素子はリードフレームのリード
端子の一部を残してエポキシ樹脂等の外装樹脂によりト
ランスファー成形機などで封止成形を行って外装樹脂に
よる封口がなされており、リードフレームの凸部をコン
デンサ素子の近辺で切断して陽極リードと陰極リードが
形成されてチップ状の固体電解コンデンサが構成されて
いる。The solid electrolytic capacitor element connected to the lead frame as described above is sealed and molded by a transfer molding machine or the like with a package resin such as an epoxy resin while leaving a part of the lead terminals of the lead frame. The projecting portion of the lead frame is cut in the vicinity of the capacitor element to form the anode lead and the cathode lead to form a chip-shaped solid electrolytic capacitor.
【００１５】[0015]
【作用】誘電体酸化皮膜層を形成した弁作用金属箔の一
部を陽極部とし、残りの部分に半導体層及び導電体層を
形成したコンデンサ素子が複数枚一定の方向に揃えて重
ね合せられている。そして各陽極部はジグザグ状の金属
体の凹部に収納され、リードフレームの接続している。
このため重ね合せたコンデンサ素子の陽極部と導電体層
形成部の厚みの差が解消されるばかりでなく、陽極部間
のすきまもなくなり外装樹脂の成形圧による劣化を防ぐ
ことができるものと思われる。[Function] A part of the valve action metal foil having the dielectric oxide film layer is used as an anode part, and a plurality of capacitor elements having the semiconductor layer and the conductor layer formed on the remaining part are aligned and aligned in a certain direction. ing. Then, each anode part is housed in a recess of a zigzag metal body and connected to a lead frame.
Therefore, not only is it possible to eliminate the difference in thickness between the anode part and the conductor layer forming part of the superimposed capacitor elements, but also to eliminate the gap between the anode parts and prevent the deterioration of the exterior resin due to the molding pressure. Be done.
【００１６】[0016]
【実施例】以下、実施例及び比較例を示して本発明をさ
らに詳しく説明する。EXAMPLES The present invention will be described in more detail with reference to Examples and Comparative Examples.
【００１７】実施例１〜４ りん酸とりん酸アンモニウム水溶液中で化成処理した表
面に誘電体酸化皮膜層を形成した４５μＦ／ｃｍ2 の厚
さ０．１mmのアルミニウムエッチング箔（以下化成箔と
称する。）の小片５×３mmの一部２×３mmを陽極部と
し、残り３×３mmの部分が浸漬するように、別に用意し
た酢酸鉛三水和物２．４モル／ｌの水溶液と過硫酸アン
モニウム４．０モル／ｌ水溶液の混合液に漬け６０℃で
２０分放置し、二酸化鉛と硫酸鉛からなる半導体層を形
成した。このような操作を３回くり返した後、半導体層
上にカーボンペースト及び銀ペーストを順に積層して導
電体層を形成し、コンデンサ素子を作製した。[0017] referred to as the etched aluminum foil (hereinafter foil thickness 0.1mm examples 1~4 45μF / cm 2 of forming a dielectric oxide layer on the chemical conversion treated surface by phosphoric acid and phosphate in the acid aqueous solution of ammonium A small piece of 5 × 3 mm of 2) .3 mm is used as an anode part, and the remaining 3 × 3 mm part is immersed so that a separately prepared aqueous solution of lead acetate trihydrate 2.4 mol / l and ammonium persulfate can be used. It was dipped in a mixed solution of 4.0 mol / l aqueous solution and left at 60 ° C. for 20 minutes to form a semiconductor layer composed of lead dioxide and lead sulfate. After repeating such an operation three times, a carbon paste and a silver paste were sequentially laminated on the semiconductor layer to form a conductor layer, and a capacitor element was manufactured.
【００１８】このようなコンデンサ素子を実施例１、２
では２枚、実施例３、４では４枚同一方向に並べた。そ
して厚み０．１mm、幅３．２mmのニッケル箔を表１に記
載した形状に折り曲げて金属体を作製しておき、その凹
部に各々のコンデンサ素子の陽極部を収納し、収納部を
熔接して一体化した。さらに銀ペースト浴に各導電体層
形成部を浸漬し、導電体層形成部も一体化した。Such a capacitor element is used in Examples 1 and 2.
2 sheets, and in Examples 3 and 4, 4 sheets were arranged in the same direction. Then, a nickel foil having a thickness of 0.1 mm and a width of 3.2 mm was bent into the shape shown in Table 1 to prepare a metal body, and the anode part of each capacitor element was housed in the recess, and the housing part was welded. Integrated. Further, each conductor layer forming portion was immersed in a silver paste bath to integrate the conductor layer forming portion.
【００１９】次いで表１に形状を併記した、互いに対向
する一対の凸部を有するリードフレーム（厚み０．１２
mm、幅３．２mm）の各凸部に、前記、積層したコンデン
サ素子の導電体層形成部と金属体の一部を載置し、銀ペ
ーストで電気的、機械的に接続した後、リードフレーム
の一部を残してエポキシ樹脂でトランスファー成形によ
り封口し、固体電解コンデンサを作製した。Next, a lead frame (a thickness of 0.12) having a pair of convex portions facing each other, whose shapes are also shown in Table 1, is shown.
mm, width 3.2 mm), the conductive layer forming part of the laminated capacitor element and a part of the metal body are placed on each convex part, and the leads are electrically and mechanically connected with silver paste. A part of the frame was left and sealed by transfer molding with an epoxy resin to manufacture a solid electrolytic capacitor.
【００２０】実施例５〜８ 実施例１〜４で半導体層を酢酸鉛三水和物２．０モル／
ｌ水溶液に化成箔を浸漬して別に用意した白金陰極との
間で電気化学的に形成した二酸化鉛にした以外は、実施
例１〜４と同様にして固体電解コンデンサを各々作製し
た。Examples 5 to 8 The semiconductor layer in Examples 1 to 4 was prepared as lead acetate trihydrate 2.0 mol / mol.
A solid electrolytic capacitor was produced in the same manner as in Examples 1 to 4 except that the chemical conversion foil was dipped in an aqueous solution to prepare lead dioxide electrochemically formed between it and a separately prepared platinum cathode.
【００２１】比較例１ 実施例３で、ジグザグ状の金属体を使用せず、導電体層
形成部のみ銀ペースト浴に浸漬することによって一体化
し、リードフレームの導電体層形成部は銀ペーストで、
陽極部は熔接で接続した以外は実施例３と同様にして固
体電解コンデンサを作製した。Comparative Example 1 In Example 3, a zigzag metal body was not used, but only the conductor layer forming portion was immersed in a silver paste bath for integration, and the conductor layer forming portion of the lead frame was made of silver paste. ,
A solid electrolytic capacitor was produced in the same manner as in Example 3 except that the anode part was connected by welding.
【００２２】以上作製した直後の固体電解コンデンサの
性能を表２にまとめて示した。なお全数値はｎ＝５０点
の平均値である。The performance of the solid electrolytic capacitor immediately after the above production is summarized in Table 2. All numerical values are average values of n = 50 points.
【００２３】[0023]
【表１】 [Table 1]
【００２４】[0024]
【表２】 [Table 2]
【００２５】[0025]
【発明の効果】本発明のチップ状固体電解コンデンサ
は、ジグザグ状の金属体の凹部に陽極部が収納されてい
るため、作製した固体電解コンデンサのＬＣは極めて良
好である。In the chip-shaped solid electrolytic capacitor of the present invention, the anode part is housed in the concave portion of the zigzag metal body, and therefore the LC of the manufactured solid electrolytic capacitor is extremely good.
【図１】コンデンサ素子を複数枚方向を揃えて陽極部
を、ジグザグ状の金属体の凹部に収納した状態を示す模
式図である。FIG. 1 is a schematic diagram showing a state in which a plurality of capacitor elements are aligned in a direction and an anode portion is housed in a concave portion of a zigzag metal body.
【図２】ジグザグ状の金属体の凹部に陽極部が収納され
て積層された状態のコンデンサ素子をリードフレームに
載置し、外装樹脂で封口されている固体電解コンデンサ
の断面図である。FIG. 2 is a cross-sectional view of a solid electrolytic capacitor in which a capacitor element in a state where an anode portion is housed in a concave portion of a zigzag-shaped metal body and stacked is placed on a lead frame and sealed with an exterior resin.
【図３】従来例の固体電解コンデンサをリードフレーム
に接続する方法を示す模式図である。FIG. 3 is a schematic diagram showing a method of connecting a solid electrolytic capacitor of a conventional example to a lead frame.
【図４】リードフレームの凸部を示す平面図である。FIG. 4 is a plan view showing a convex portion of a lead frame.
１ リードフレーム １ａ リードフレームの凸部 １ｂ リードフレームの凸部 ２ コンデンサ素子 ３ 陽極部 ４ 導電体層形成部 ５ 導電材 ６ 外装樹脂 ７ 金属体 1 Lead Frame 1a Projection of Lead Frame 1b Projection of Lead Frame 2 Capacitor Element 3 Anode 4 Conductive Layer Forming 5 Conductive Material 6 Exterior Resin 7 Metal Body
Claims (1)
弁作用金属箔の端部を陽極部とし、この金属箔の残部の
前記誘電体酸化皮膜層上に半導体層、その上に導電体層
が順次形成された複数枚の固体電解コンデンサ素子の前
記陽極部が、複数の凹部を有するジグザグ状の金属体の
凹部にそれぞれ収納されてこの金属体に電気的に接続さ
れており、前記固体電解コンデンサ素子の導電体層と前
記金属体にはリードフレームのリード端子が接続されて
おり、このリード端子の一部を残して外装樹脂で封口さ
れていることを特徴とするチップ状固体電解コンデン
サ。1. An end portion of a plate-shaped valve action metal foil having a dielectric oxide film layer on its surface is used as an anode part, a semiconductor layer is formed on the remaining part of the metal foil, and a conductive layer is formed on the semiconductor layer. The anode part of a plurality of solid electrolytic capacitor elements sequentially formed body layer is housed in each recess of a zigzag metal body having a plurality of recesses and electrically connected to the metal body, A lead terminal of a lead frame is connected to the conductor layer of the solid electrolytic capacitor element and the metal body, and the lead terminal of the lead frame is sealed with an exterior resin leaving a part of the lead terminal. Capacitors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34526791A JPH05175085A (en) | 1991-12-26 | 1991-12-26 | Chip-shaped solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34526791A JPH05175085A (en) | 1991-12-26 | 1991-12-26 | Chip-shaped solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175085A true JPH05175085A (en) | 1993-07-13 |
Family
ID=18375448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34526791A Pending JPH05175085A (en) | 1991-12-26 | 1991-12-26 | Chip-shaped solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175085A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6563693B2 (en) | 2001-07-02 | 2003-05-13 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor |
| KR20030084256A (en) * | 2002-04-26 | 2003-11-01 | 삼화전기주식회사 | Solid state electrolytic capacitor and lead frame used therefor |
| JP2006156951A (en) * | 2004-11-04 | 2006-06-15 | Tdk Corp | Solid electrolytic capacitor and manufacturing method therefor |
| JP2007073731A (en) * | 2005-09-07 | 2007-03-22 | Tdk Corp | Solid electrolytic capacitor and method of manufacturing the same |
| JP2012004362A (en) * | 2010-06-17 | 2012-01-05 | Nec Tokin Corp | Electric double layer capacitor |
| JP2013045795A (en) * | 2011-08-22 | 2013-03-04 | Jm Energy Corp | Electric storage device |
-
1991
- 1991-12-26 JP JP34526791A patent/JPH05175085A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6563693B2 (en) | 2001-07-02 | 2003-05-13 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor |
| KR20030084256A (en) * | 2002-04-26 | 2003-11-01 | 삼화전기주식회사 | Solid state electrolytic capacitor and lead frame used therefor |
| JP2006156951A (en) * | 2004-11-04 | 2006-06-15 | Tdk Corp | Solid electrolytic capacitor and manufacturing method therefor |
| JP2007073731A (en) * | 2005-09-07 | 2007-03-22 | Tdk Corp | Solid electrolytic capacitor and method of manufacturing the same |
| JP2012004362A (en) * | 2010-06-17 | 2012-01-05 | Nec Tokin Corp | Electric double layer capacitor |
| JP2013045795A (en) * | 2011-08-22 | 2013-03-04 | Jm Energy Corp | Electric storage device |
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