JPH05145118A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JPH05145118A JPH05145118A JP33137491A JP33137491A JPH05145118A JP H05145118 A JPH05145118 A JP H05145118A JP 33137491 A JP33137491 A JP 33137491A JP 33137491 A JP33137491 A JP 33137491A JP H05145118 A JPH05145118 A JP H05145118A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- upper electrode
- emitting device
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、発光素子の輝度を向上
させることができる素子構造の改良に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a device structure capable of improving the brightness of a light emitting device.
【０００２】[0002]
【従来の技術】従来の一般的な発光素子５１の構造の例
を図５に示す。１１はＮ型半導体層、１２はＰ型半導体
層、２はＰＮ接合層をそれぞれ示しており、該素子５１
の表面側中央部にはドット状の上部電極３０が、裏面側
には平板状の下部電極４が設けられている。しかしなが
ら該素子構造では、上部電極３０直下、すなわち素子中
央部付近のＰＮ接合層２で生じた光が端面に至って放射
される間に素子自体に自己吸収されるという問題があ
り、かかる問題が発光素子の高輝度化を図るに際しての
大きな障壁であった。2. Description of the Related Art An example of the structure of a conventional general light emitting element 51 is shown in FIG. Reference numeral 11 is an N-type semiconductor layer, 12 is a P-type semiconductor layer, and 2 is a PN junction layer.
A dot-shaped upper electrode 30 is provided in the central portion on the front surface side, and a flat plate-shaped lower electrode 4 is provided on the back surface side. However, in the device structure, there is a problem that the light generated in the PN junction layer 2 immediately below the upper electrode 30, that is, in the vicinity of the center of the device, is self-absorbed by the device itself while being emitted to the end face, and such a problem occurs. This was a big barrier in achieving high brightness of the device.
【０００３】そこで輝度向上を図るべく図４のような発
光素子５０の構造が提案されている。該素子５０はドッ
ト状上部電極３０周辺部の垂直下方の半導体材料をエッ
チング等で部分的に除去し、途中にＰＮ接合層２が存在
する円柱状に加工したものである。かかる素子構造であ
れば、上部電極３０直下のＰＮ接合層２で生ずる比較的
強い光（電流拡散性の影響で、電極３０から遠い素子端
縁部に比べ電極３０直下の発光は強い。この傾向はＰ型
半導体層１２による光の自己吸収を抑制すべく該層を薄
層化した場合顕著となる。）が、上記自己吸収という障
害なしに端面方向から取り出せるという利点がある。Therefore, in order to improve the brightness, a structure of the light emitting element 50 as shown in FIG. 4 has been proposed. The element 50 is formed by partially removing the semiconductor material vertically below the peripheral portion of the dot-shaped upper electrode 30 by etching or the like, and processing it into a cylindrical shape in which the PN junction layer 2 exists. With such an element structure, relatively strong light generated in the PN junction layer 2 immediately below the upper electrode 30 (emission under the electrode 30 is stronger than that of the element edge portion far from the electrode 30 due to the influence of current diffusion). Is remarkable when the layer is thinned in order to suppress self-absorption of light by the P-type semiconductor layer 12.), but there is an advantage that it can be taken out from the end face direction without the obstacle of self-absorption.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら上記図４
に示すような素子５０の構造では、ドット状上部電極３
０の周辺を除去してしまうためＰＮ接合層２端面の表出
面積が少なく、高輝度化には限界があることを見出し
た。従って本発明は、同一チップサイズにおいてより高
輝度化を図り得る上部電極及び素子構造を提供すること
を課題とする。However, the above-mentioned FIG.
In the structure of the element 50 as shown in FIG.
It has been found that the exposed area of the end surface of the PN junction layer 2 is small because the periphery of 0 is removed, and there is a limit to high brightness. Therefore, an object of the present invention is to provide an upper electrode and a device structure capable of achieving higher brightness in the same chip size.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決する本発
明の発光素子は、発光素子の表面に帯状の上部電極が形
成され、該帯状上部電極の側辺に沿って発光素子の一部
が表面から垂直方向に除去された切欠部を有し、該切欠
部においてＰＮ接合層が表出していることを特徴とする
ものである。In the light emitting device of the present invention for solving the above problems, a strip-shaped upper electrode is formed on the surface of the light emitting device, and a part of the light emitting device is formed along the side of the strip-shaped upper electrode. It is characterized in that it has a notch portion that is vertically removed from the surface, and the PN junction layer is exposed at the notch portion.
【０００６】[0006]
【作用】上部電極を、従来のドット状電極に代えて帯状
電極とし、しかも該帯状電極の側辺に沿ってＰＮ接合部
が表出する切欠部を設けた構成としたので、上部電極直
下に存在するＰＮ接合層の表出面積を、図４に示すよう
なドット状電極タイプに比べ大きくすることができる。
従ってＰＮ接合部の表出面積が増大した分、電極直下で
発生した比較的強力な光を自己吸収なしにより多く取り
出せるので、素子の発光輝度を向上させることができ
る。The upper electrode is a strip-shaped electrode instead of the conventional dot-shaped electrode, and the notch for exposing the PN junction is provided along the side of the strip-shaped electrode. The exposed area of the existing PN junction layer can be made larger than that of the dot electrode type as shown in FIG.
Therefore, as the exposed surface area of the PN junction is increased, a relatively large amount of relatively strong light generated immediately below the electrode can be extracted without self-absorption, and the emission brightness of the device can be improved.
【０００７】[0007]
【実施例】以下図面を参照しながら本発明の実施例を詳
細に説明する。図１は本発明にかかる発光素子１を示す
斜視図である。図において、１１，１２はそれぞれＧａ
ＩｎＰエピタキシャル成長層等からなるＮ型半導体層、
Ｐ型半導体層であり、両者の接合部はＰＮ接合層２とさ
れ、該素子１の表面１３側には上部電極３が、裏面側に
は下部電極４がそれぞれ被着されている。Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a perspective view showing a light emitting device 1 according to the present invention. In the figure, 11 and 12 are Ga, respectively.
An N-type semiconductor layer including an InP epitaxial growth layer,
It is a P-type semiconductor layer, and the junction between the two is a PN junction layer 2, and an upper electrode 3 is deposited on the front surface 13 side of the element 1 and a lower electrode 4 is deposited on the rear surface side.
【０００８】上記上部電極３は、２本の帯状電極がクロ
スした十字型を呈しており、該帯状上部電極３の側辺３
０に沿って垂直下方向に素子１の一部が除去された切欠
部１０が設けられ、結果として該発光素子１は、その上
層部四隅が方形状に取り除かれた形状を呈している。切
欠部１０は、上層のＰ型半導体層１２及び下層のＮ型半
導体層１１にまたがって設けられており、該切欠部１０
においてＰＮ接合層２が表出している。The upper electrode 3 has a cross shape in which two strip-shaped electrodes are crossed, and the side 3 of the strip-shaped upper electrode 3 is formed.
A notch 10 is formed by removing a part of the device 1 vertically downward along 0, and as a result, the light emitting device 1 has a shape in which four corners of the upper layer part are removed in a square shape. The notch 10 is provided so as to straddle the upper P-type semiconductor layer 12 and the lower N-type semiconductor layer 11, and the notch 10
At, the PN junction layer 2 is exposed.
【０００９】帯状に形成する上部電極３の幅は５〜４０
μｍ程度、好ましくは１５〜３０μｍ程度が適当であ
る。幅が細すぎると電極形成の際の作業が困難であると
共に電流が流れにくくなる傾向がある。逆に幅が太すぎ
ると、電極３幅方向の中央部直下のＰＮ接合層２で発生
した光が、端面に至る間に自己吸収される度合が増加し
てしまう傾向がある。なお本実施例では、素子表面１３
の周縁と上部電極３との間に若干の幅を持たせた例を示
しているが、幅を設けることなく素子表面１３全面を覆
うように上部電極３を設けても良い。The width of the upper electrode 3 formed in a strip shape is 5 to 40.
About μm, preferably about 15 to 30 μm is suitable. If the width is too small, the work for forming the electrodes is difficult and the current tends to be difficult to flow. On the other hand, if the width is too large, the degree of self-absorption of light generated in the PN junction layer 2 immediately below the central portion in the width direction of the electrode 3 tends to increase before reaching the end face. In this embodiment, the element surface 13
Although an example is shown in which a slight width is provided between the peripheral edge and the upper electrode 3, the upper electrode 3 may be provided so as to cover the entire element surface 13 without providing a width.
【００１０】上記切欠部１０は、少なくとも上部電極３
の側辺３０直下或いはその近傍のＰＮ接合層２が側辺３
０に沿って表出するよう設ければ良い。かかる構造とす
ることにより、上部電極３直下のＰＮ接合層２で生じた
光を自己吸収なしに積極的に取り出す事ができ、輝度を
向上させることができる。切欠部１０の深さは任意であ
るが、例えばＰ型半導体層１２の厚さが５μｍ、Ｎ型半
導体層１１の厚さが２０μｍである場合、切欠部１０の
垂直方向の深さは素子表面１３から１０μｍ程度が適当
である。The notch 10 is at least the upper electrode 3.
The PN junction layer 2 immediately below or near the side edge 30 of the
It may be provided so as to appear along 0. With such a structure, light generated in the PN junction layer 2 immediately below the upper electrode 3 can be positively taken out without self-absorption, and the brightness can be improved. The depth of the notch 10 is arbitrary, but when the thickness of the P-type semiconductor layer 12 is 5 μm and the thickness of the N-type semiconductor layer 11 is 20 μm, the depth of the notch 10 in the vertical direction is the element surface. About 13 to 10 μm is suitable.
【００１１】切欠部１０の形成方法は、例えば従来公知
のエッチング処理による除去法をそのまま採用すること
ができ、また形成時期は上部電極３の形成前、或いは形
成後のいずれであっても良い。なお本実施例では、素子
表面１３から垂直真下に除去した切欠部１０を例示して
いるが、ＰＮ接合層２さえ電極側辺３０に沿って表出し
ていれば切欠部１０底部は裾野状になっていても良い。As a method of forming the notch portion 10, for example, a conventionally known method of removing by etching treatment can be directly adopted, and the forming time may be before forming the upper electrode 3 or after forming it. In the present embodiment, the cutout 10 removed vertically downward from the element surface 13 is illustrated, but if the PN junction layer 2 is exposed along the electrode side 30 as well, the bottom of the cutout 10 has a skirt shape. It may be.
【００１２】素子表面１３への上部電極３の形成方法は
任意であり、従来公知の各種方法が採用できる。一例と
して、電極の密着性が良く素子表面１３が荒れない好ま
しい形成方法の例を示すと、まず素子表面１３上にＡ
ｕ，ＡｕＢｅ，ＡｕＺｎ，Ａｌ等の電極材料を蒸着し、
次に電極形成部分の表面をフォトレジストにてマスクし
電極パターニングを施す。そしてエッチングを行い、最
後に抵抗加熱炉や赤外線加熱炉にて不活性ガス雰囲気中
でアニール処理を施し、所望の上部電極３を得るもので
ある。The method of forming the upper electrode 3 on the device surface 13 is arbitrary, and various conventionally known methods can be adopted. As an example, an example of a preferable forming method in which the adhesion of the electrodes is good and the element surface 13 is not roughened is as follows.
Evaporating electrode materials such as u, AuBe, AuZn, Al,
Next, the surface of the electrode forming portion is masked with a photoresist to perform electrode patterning. Then, etching is performed, and finally, annealing treatment is performed in an inert gas atmosphere in a resistance heating furnace or an infrared heating furnace to obtain a desired upper electrode 3.
【００１３】通常上部電極３には、給電用のボンディン
グワイヤが取着される。本発明において、上部電極３は
帯状で幅狭であるのでボンディングワイヤの取付作業が
困難になる傾向があり、このため図１に示すように、上
部電極３の一部にボンディングワイヤ取着用の電極幅広
部３１を設けることが望ましい。Usually, a bonding wire for power supply is attached to the upper electrode 3. In the present invention, since the upper electrode 3 is strip-shaped and has a narrow width, it is difficult to attach the bonding wire. Therefore, as shown in FIG. It is desirable to provide the wide portion 31.
【００１４】本発明において、発光素子自体の構成は任
意であり、例えばＩｎＰ，ＧａＡｓ，ＧａＰ，ＡｌＧａ
Ａｓ，ＧａＩｎＰ等の各種Ｐ型、Ｎ型半導体材料を使用
したものが幅広く適用できる。就中、ＧａＩｎＰホモ接
合型発光素子などが好適である。In the present invention, the structure of the light emitting element itself is arbitrary, for example, InP, GaAs, GaP, AlGa.
Materials using various P-type and N-type semiconductor materials such as As and GaInP can be widely applied. Among them, a GaInP homojunction type light emitting device is preferable.
【００１５】図２は本発明にかかる発光素子の他の例を
示す平面図である。この実施例では、上部電極３を帯状
電極によってＴ字型に形成し、その側辺３０に沿って半
導体材料を取り除いて切欠部１０を設けたものである。FIG. 2 is a plan view showing another example of the light emitting device according to the present invention. In this embodiment, the upper electrode 3 is formed in a T-shape by a strip electrode, and the semiconductor material is removed along the side 30 of the upper electrode 3 to provide the notch 10.
【００１６】図３も本発明の他の実施例の平面図であ
り、本例では素子表面１３の中央部に帯状電極を配置
し、さらにその両端に相対方向に帯状電極を付加してな
る上部電極３の例を示している。上記と同様に該上部電
極３の側辺３０に沿って切欠部１０が設けられている。
これら実施例のように、上部電極３の形状と切欠部１０
によって除去された素子表面１３及びその直下のＰＮ接
合層とは、略一致させておくことが好ましい。FIG. 3 is also a plan view of another embodiment of the present invention. In this embodiment, a strip-shaped electrode is arranged in the central portion of the element surface 13, and strip-shaped electrodes are added to both ends of the strip-shaped electrode in a relative direction. An example of the electrode 3 is shown. Similar to the above, the notch 10 is provided along the side 30 of the upper electrode 3.
As in these examples, the shape of the upper electrode 3 and the notch 10
It is preferable that the element surface 13 removed by and the PN junction layer immediately below the element surface 13 are substantially aligned with each other.
【００１７】上記実施例以外にも上部電極３の形状は種
々変更可能であり、例えばＨ字型、ロ字型、Ｌ字型、Ｅ
字型等が挙げられる。この中で好ましい形状は、切欠部
１０によってその端面に表出したＰＮ接合層２の発光方
向に障害がない形状である。すなわち、Ｈ字型等に上部
電極３及び切欠部１０を設けると、端面に表出したＰＮ
接合層２同士が対向する部分が存在し、一方の端面から
放出された光が他方の端面において自己吸収され、若干
輝度が低下する傾向があり、このため図１〜図３に示す
ような端面同士の対向部が存在しない形状が望ましい。The shape of the upper electrode 3 can be changed in various ways other than the above-mentioned embodiment, for example, H-shaped, B-shaped, L-shaped, and E-shaped.
Character-shaped and the like. Among them, a preferable shape is a shape in which there is no obstacle in the light emitting direction of the PN junction layer 2 exposed on the end surface by the cutout 10. That is, when the upper electrode 3 and the notch 10 are provided in an H shape or the like, the PN exposed on the end face is formed.
There is a portion where the bonding layers 2 face each other, and the light emitted from one end surface tends to be self-absorbed at the other end surface, resulting in a slight decrease in brightness. Therefore, the end surface as shown in FIGS. It is desirable to have a shape in which there are no facing portions.
【００１８】実施例１ 半導体基板上にそれぞれＧａＩｎＰのエピタキシャル成
長層からなる厚さ２０μｍのＮ型半導体層１１と、厚さ
６μｍのＰ型半導体層１２とから構成されるＰＮ接合層
２を有する、縦×横×高さ＝３５０μｍ×３５０μｍ×
２００μｍの発光素子チップを作成した。該発光素子チ
ップの表面１３に、ＡｕＢｅからなる電極材料を真空蒸
着後にパターニング及びアニール処理を施す方法で、電
極幅３０μｍの十字型帯状電極からなる上部電極３を形
成した。そして上部電極３部分を除いて素子表面１３に
エッチングを施して深さ１２μｍの切欠部１０を形成
し、図１に示すような発光素子１を得た。なお上電極３
のクロス部には、直径５０μｍの円形幅広部３１を設け
た。またチップの裏面にはＡｕＳｎからなる下部電極４
を被着した。EXAMPLE 1 A PN junction layer 2 having a 20 μm thick N-type semiconductor layer 11 and a 6 μm-thick P-type semiconductor layer 12 each made of a GaInP epitaxial growth layer is formed on a semiconductor substrate. × width × height = 350 μm × 350 μm ×
A 200 μm light emitting element chip was prepared. On the surface 13 of the light emitting element chip, an upper electrode 3 made of a cross-shaped strip electrode having an electrode width of 30 μm was formed by a method of performing vacuum evaporation of an electrode material made of AuBe, followed by patterning and annealing. Then, the element surface 13 except for the upper electrode 3 was etched to form a notch 10 having a depth of 12 μm, and a light emitting element 1 as shown in FIG. 1 was obtained. The upper electrode 3
A circular wide portion 31 having a diameter of 50 μm was provided at the cross portion of the above. The lower electrode 4 made of AuSn is provided on the back surface of the chip.
I was wearing
【００１９】上記で得た発光素子１に、上部電極３の幅
広部３１においてワイヤボンディングを施し、該ワイヤ
と下部電極４との間に２０ｍＡの電流を加え、発光素子
１を発光させた。このときの輝度を輝度測定計（ＥＧ＆
Ｇ社フォトメーター モデル５５０−１）にて測定し
た。The light emitting device 1 obtained above was wire-bonded at the wide portion 31 of the upper electrode 3, and a current of 20 mA was applied between the wire and the lower electrode 4 to cause the light emitting device 1 to emit light. The brightness at this time is measured by a brightness meter (EG &
It was measured with a G photometer model 550-1).
【００２０】実施例２ 上記実施例１で作成した発光素子チップに、上部電極３
０の形状をＴ字型とした以外は、上記実施例１と同様の
方法で図２に示すような発光素子を作成した。そして上
記と同様にして輝度を測定した。Example 2 The light emitting element chip prepared in Example 1 above was provided with an upper electrode 3
A light emitting device as shown in FIG. 2 was prepared in the same manner as in Example 1 except that the shape of 0 was T-shaped. Then, the brightness was measured in the same manner as above.
【００２１】実施例３ 上記実施例１で作成した発光素子チップに、上部電極３
０の形状を図３に示すような形状とした以外は上記実施
例１と同様の方法で発光素子を作成した。そして上記と
同様にして輝度を測定した。Example 3 The light emitting element chip prepared in Example 1 above was provided with an upper electrode 3
A light emitting device was produced in the same manner as in Example 1 except that the 0 shape was changed to the shape shown in FIG. Then, the brightness was measured in the same manner as above.
【００２２】比較例１ 上記実施例１で作成した発光素子チップに、上記と同様
の方法により直径１２０μｍのドット状上部電極３０を
形成すると共に、該電極３０の周辺の半導体材料をエッ
チングで除去（除去深さ２０μｍ）して図４に示すよう
な発光素子５０を得た。そして上記と同様にして輝度を
測定した。Comparative Example 1 A dot-shaped upper electrode 30 having a diameter of 120 μm was formed on the light emitting element chip prepared in Example 1 by the same method as described above, and the semiconductor material around the electrode 30 was removed by etching ( The removal depth was 20 μm) to obtain a light emitting device 50 as shown in FIG. Then, the brightness was measured in the same manner as above.
【００２３】比較例２ 上記実施例１で作成した発光素子チップに、上記と同様
の方法により直径１２０μｍのドット状上部電極３０を
形成し、図５に示すような発光素子５１を得た。そして
上記と同様にして輝度を測定した。Comparative Example 2 A dot-shaped upper electrode 30 having a diameter of 120 μm was formed on the light emitting element chip prepared in Example 1 by the same method as described above to obtain a light emitting element 51 as shown in FIG. Then, the brightness was measured in the same manner as above.
【００２４】上記実施例１〜３及び比較例１，２で作成
した発光素子の積分球を用いた輝度測定結果を表１に示
す。Table 1 shows the results of luminance measurement using the integrating spheres of the light emitting devices prepared in Examples 1 to 3 and Comparative Examples 1 and 2.
【００２５】[0025]
【表１】 [Table 1]
【００２６】表１から明らかな通り、本発明にかかる素
子構造を採用した実施例１〜３の発光素子の輝度は、従
来構造である比較例品に比べ、輝度が大幅に向上したこ
とが確認された。As is clear from Table 1, it was confirmed that the brightness of the light emitting devices of Examples 1 to 3 which adopted the device structure according to the present invention was significantly improved as compared with the comparative example product having the conventional structure. Was done.
【００２７】[0027]
【発明の効果】以上説明した通りの本発明の発光素子に
よれば、上部電極を帯状電極にて形成し、該帯状電極直
下のＰＮ接合層が表出する構成としたので、自己吸収な
しに光を取り出せるＰＮ接合層の表出面積が増大する。
従って同一チップサイズでの光の取り出し効率を向上さ
せることができるので、発光素子の高輝度化を図ること
ができる。As described above, according to the light emitting device of the present invention, since the upper electrode is formed of the strip electrode and the PN junction layer immediately below the strip electrode is exposed, there is no self-absorption. The exposed area of the PN junction layer from which light can be taken out increases.
Therefore, it is possible to improve the light extraction efficiency in the same chip size, so that the brightness of the light emitting element can be increased.
【図１】本発明にかかる発光素子の構造を示す斜視図で
ある。FIG. 1 is a perspective view showing a structure of a light emitting device according to the present invention.
【図２】本発明の他の実施例を示す平面図である。FIG. 2 is a plan view showing another embodiment of the present invention.
【図３】本発明の他の実施例を示す平面図である。FIG. 3 is a plan view showing another embodiment of the present invention.
【図４】従来の発光素子の構造を示す斜視図である。FIG. 4 is a perspective view showing a structure of a conventional light emitting device.
【図５】従来の発光素子の構造を示す斜視図である。FIG. 5 is a perspective view showing a structure of a conventional light emitting element.
１ 発光素子 １０ 切欠部 １１ Ｎ型半導体層 １２ Ｐ型半導体層 １３ 素子表面 ２ ＰＮ接合層 ３ 上部電極 ３０ 側辺 ３１ 幅広部 DESCRIPTION OF SYMBOLS 1 Light emitting element 10 Notch part 11 N-type semiconductor layer 12 P-type semiconductor layer 13 Element surface 2 PN junction layer 3 Upper electrode 30 Side edge 31 Wide part
Claims (1)
され、該帯状上部電極の側辺に沿って発光素子の一部が
表面から垂直方向に除去された切欠部を有し、該切欠部
においてＰＮ接合層が表出していることを特徴とする発
光素子。1. A strip-shaped upper electrode is formed on a surface of a light-emitting element, and a cutout portion is formed along a side of the strip-shaped upper electrode so that a part of the light-emitting element is vertically removed from the surface. A light-emitting element characterized in that a PN junction layer is exposed in the portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33137491A JPH05145118A (en) | 1991-11-19 | 1991-11-19 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33137491A JPH05145118A (en) | 1991-11-19 | 1991-11-19 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05145118A true JPH05145118A (en) | 1993-06-11 |
Family
ID=18242974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33137491A Pending JPH05145118A (en) | 1991-11-19 | 1991-11-19 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05145118A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997047042A1 (en) * | 1996-06-05 | 1997-12-11 | Sarnoff Corporation | Light emitting semiconductor device |
| JP2004128041A (en) * | 2002-09-30 | 2004-04-22 | Toshiba Corp | Semiconductor light emitting element |
| WO2005067067A1 (en) * | 2004-01-07 | 2005-07-21 | Rohm Co., Ltd. | Semiconductor light emitting element |
| JP2006191068A (en) * | 2004-12-31 | 2006-07-20 | Lg Electron Inc | High output light emitting diode and its manufacturing method |
| KR100701975B1 (en) * | 2005-04-28 | 2007-03-30 | (주)더리즈 | Light emitting element |
| JP2007288192A (en) * | 2006-04-14 | 2007-11-01 | High Power Optoelectronics Inc | Semiconductor light-emitting device and its manufacturing method |
-
1991
- 1991-11-19 JP JP33137491A patent/JPH05145118A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997047042A1 (en) * | 1996-06-05 | 1997-12-11 | Sarnoff Corporation | Light emitting semiconductor device |
| JP2004128041A (en) * | 2002-09-30 | 2004-04-22 | Toshiba Corp | Semiconductor light emitting element |
| WO2005067067A1 (en) * | 2004-01-07 | 2005-07-21 | Rohm Co., Ltd. | Semiconductor light emitting element |
| CN100416876C (en) * | 2004-01-07 | 2008-09-03 | 罗姆股份有限公司 | Semiconductor light emitting element |
| JP2006191068A (en) * | 2004-12-31 | 2006-07-20 | Lg Electron Inc | High output light emitting diode and its manufacturing method |
| US7939841B2 (en) | 2004-12-31 | 2011-05-10 | Lg Electronics Inc. | High output light emitting diode and method for fabricating the same |
| KR100701975B1 (en) * | 2005-04-28 | 2007-03-30 | (주)더리즈 | Light emitting element |
| JP2007288192A (en) * | 2006-04-14 | 2007-11-01 | High Power Optoelectronics Inc | Semiconductor light-emitting device and its manufacturing method |
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