JPS61110476A - Infrared light emitting diode - Google Patents

Infrared light emitting diode

Info

Publication number
JPS61110476A
JPS61110476A JP59231902A JP23190284A JPS61110476A JP S61110476 A JPS61110476 A JP S61110476A JP 59231902 A JP59231902 A JP 59231902A JP 23190284 A JP23190284 A JP 23190284A JP S61110476 A JPS61110476 A JP S61110476A
Authority
JP
Japan
Prior art keywords
back surface
electrode
gaas
reflection
except
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59231902A
Other languages
Japanese (ja)
Inventor
Nobuyuki Yanagihara
伸行 柳原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59231902A priority Critical patent/JPS61110476A/en
Publication of JPS61110476A publication Critical patent/JPS61110476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

PURPOSE:To obtain a GaAs infrared LED having high emitting light output suppressed in the contacting resistance between a back surface electrode and a conductive adhesive without increasing the quality of light due to the internal absorption of light components discharged externally through the internal reflection by forming a netlike structure in a back surface electrode shape, and etching the crystal surface except the electrodes in irregular or porous shape. CONSTITUTION:The back surface electrode structure of an infrared LED is equipotential over the entire back surface if a conductive adhesive and a back surface electrode 5 are slightly contacted without decreasing the back surface reflectivity with the netlike electrode 5 having connection with the entire surface to reduce the contacting resistance. Further, the portion that GaAs crystal 1 except the electrode 5 of the back surface is exposed is perforated with an etchant, or treated to form irregular state, thereby increasing the reflection in a random direction except the vertical direction in the reflection on the surface A to increase the producing efficiency from the side. Thus, low contacting resistance and high emitting light output can be obtained as a whole.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は発光ダイオード（ＬＥＤ）に関し、とくにＧａ
Ａｓ系赤外ＬＥＤに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a light emitting diode (LED), and in particular to a Ga light emitting diode (LED).
Regarding As-based infrared LEDs.

〔従来例の構成と問題点〕[Conventional configuration and problems]

赤外発光ダイオードは、テレビジョンセット等の家庭電
化製品のリモートコントロール用システムの発光源及び
ホトカプラ、ホトインタラプタ用発光源として幅広く用
いられている。特ＫＧａＡｉ（１１基板上Ｋ　ｎ　ｉＪ
ｌとｐ型のエピタキシャル層を８ｉ等両性不純物の反転
を利用して形成したＧａＡｓ（Ｓｉ　）赤外ＬＥＤはそ
の中心的地位を占めている。Infrared light emitting diodes are widely used as light sources for remote control systems for home appliances such as television sets, and as light sources for photocouplers and photointerrupters. Special KGaAi (K n iJ on 11 substrates
GaAs (Si) infrared LEDs, in which l and p-type epitaxial layers are formed using the inversion of amphoteric impurities such as 8i, occupy a central position.

ＧａＡｓ赤外ＬＥＤは上記のようにエピタキシャル成長
させた基板に所定の電極を表裏面に構成した後、所定寸
法（分離して構成される。（第２図（ａ））さらにＧａ
Ａｓ（Ｓｉ　）　ＬＥＤの場合ｈ　　ｐｎ接合のｐ領域
で発光する為、外部に放出される光は１図示するように
、図中Ｘで示すように直接外部へ射出される光成分と１
図中Ｙで示すように一度Ａ面で反射し、外部に放出され
る光成分に大別される。GaAs infrared LEDs are made by forming predetermined electrodes on the front and back surfaces of the epitaxially grown substrate as described above, and then forming GaAs infrared LEDs with predetermined dimensions (separated (Fig. 2(a)).
In the case of As(Si) LEDs, light is emitted in the p region of the h pn junction, so the light emitted to the outside is divided into two parts: the light component directly emitted to the outside as shown by X in the figure, and the light component emitted directly to the outside as shown in the figure.
As indicated by Y in the figure, light is roughly divided into light components that are once reflected on surface A and emitted to the outside.

ＧａＡｓ赤外ＬＥＤはｎ層の光吸収係数が発光波長９４
Ｑｎｍ付近で１ケタル層よシも小さくｈＡ面で一度反射
されて外部に放出される光成分Ｙを有効に取シ出すこと
が、高い発光出力を得る上でひじょうに重要であった。In the GaAs infrared LED, the light absorption coefficient of the n layer is the emission wavelength of 94.
In order to obtain high luminous output, it is very important to effectively extract the light component Y, which is as small as one digit layer in the vicinity of Qnm and is reflected once on the hA surface and emitted to the outside.

この目的で、従来以下に述べる２項目について工夫し、
効果を上げてきた。For this purpose, we have devised the following two items,
It has been effective.

ＧａＡｓのｎ側電極としては一般にＡｕ−Ｇｅ、Ａｕ−
Ｎｉ等Ａｕ系電極が使用される為、裏面電極面積を極力
小さくし、Ａ面での反射を有効に起こさせるように、ド
ツト電極を採用していた。さらＫ。Generally, Au-Ge, Au-
Since an Au-based electrode such as Ni is used, a dot electrode is used to minimize the area of the back electrode and to effectively cause reflection on the A side. Sara K.

Ａ面からの反射光を側面より有効に取り出す為、素子分
離の方法において切り込みをベレット厚の約半分圧押さ
え、その後ブレーキングによシ側面ｎ側部分の形状を不
定形にして、ａ面各点での臨界角を見かけ上変動させ取
り出し効率を向上させていた。（第２図（ｂ）） しかしながら、上記構造においては、ペレットをリード
フレーム又はステムヘダイボンディングする鍬ペレット
長面と導電性接着剤Ａｇペーストとの接触において、ペ
レットの傾斜あるいは、Ａｇペースト構成成分である銀
粉のペレット長面への接触状態により、裏面全体に存在
するドツト電極すべてに電流が流れるか否かが問題とな
り、これが原因となり大電流領域での接触抵抗が大きく
なり、定電圧駆動で用いられる赤外ＬＥＤとしては、結
果として出力の低下に′）ががっていた。さらに％側面
からの光を有効に取り出す為の素子分離方法により、裏
面形状面積が個々に異な＃）、それに応じて、ドツト電
極の含まれる数にバラツキを生じ。In order to effectively take out the reflected light from the A side from the side surface, the notch is pressed down by about half the bullet thickness in the element separation method, and then by braking, the shape of the n side part of the side surface is made into an irregular shape, and each side of the A side is The extraction efficiency was improved by apparently changing the critical angle at the point. (Figure 2 (b)) However, in the above structure, when the long surface of the hoe pellet and the conductive adhesive Ag paste come into contact with each other, the inclination of the pellet or the constituent components of the Ag paste Depending on the state of contact of a certain silver powder with the long side of the pellet, there is a problem as to whether or not current flows through all the dot electrodes on the entire back side.This causes a large contact resistance in the high current area, making it difficult to use constant voltage drive. As a result, the output of infrared LEDs has been reduced. Furthermore, due to the element separation method for effectively extracting light from the side surfaces, the back surface shape area differs from one device to another, resulting in variations in the number of dot electrodes included.

これも接触抵抗を大きくする要因となり、その結果上記
と同様に出力の低下となって表われていた。This also became a factor in increasing the contact resistance, resulting in a decrease in output similarly to the above.

〔発明の目的〕[Purpose of the invention]

本発明ｒｊＧａＡｓ赤外ＬＥＤの内部で発光した光のう
ち、内部反射を経て外部へ放出される光成分の内部吸収
による光の量を増加させることなく、裏面電極と導電性
接着剤との間の接触抵抗を小さく押さえた高発光出力Ｌ
ＥＤを得る構造を提供することを目的とするものである
。Among the light emitted inside the rjGaAs infrared LED of the present invention, the light component emitted to the outside through internal reflection does not increase the amount of light due to internal absorption. High light output L with low contact resistance
The purpose of this invention is to provide a structure for obtaining ED.

〔発明の構成〕[Structure of the invention]

本発明は、赤外ＬＥＤの裏面電極構造を、微小円形ドツ
ト電極の各々分離された状態の集合体から、全面つなが
りをもった網状電極として、裏面反射率を低下させるこ
となく導電性接着剤と裏面電極とがわずかに接触してい
れば裏面全域にわたり等電位となシ、接触抵抗を下げる
ことができる。The present invention changes the back electrode structure of an infrared LED from an aggregate of separated minute circular dot electrodes to a mesh electrode with a full-surface connection, using a conductive adhesive without reducing the back reflectance. If there is slight contact with the back electrode, the entire back surface will be at equal potential and the contact resistance can be lowered.

さらに裏面の網状電極以外のＧａＡｓ結晶が出ている部
分を公知のエツチング液を使用し、穴をあけるもしくは
、凸凹状態に処理することにより％長面での反射を垂直
方向以外にランダムな方向への反射を増加させ、側面か
らの取り出し効率を増加させ、全体として低接嗅抵抗、
高発光出力が得られるところとなる。Furthermore, using a known etching solution, holes are made in the areas where the GaAs crystals are exposed other than the net-like electrodes on the back surface, or the parts are treated to make them uneven, so that the reflections on the long surfaces are made in random directions other than the vertical direction. increased reflexes, increased lateral retrieval efficiency, and overall lower olfaction resistance,
This is where high light output can be obtained.

〔実施例の説明〕[Explanation of Examples]

第１図（ａ）は、本発明によるＧａＡｓ赤外Ｉ、ＥＤの
実施例を示す断面図であり、基本的な構造は、第２図の
従来のものと同じである。FIG. 1(a) is a sectional view showing an embodiment of a GaAs infrared I, ED according to the present invention, and the basic structure is the same as the conventional one shown in FIG.

しかしながら、裏面電極蒸着において、　Ａｕ−Ｇｅ、
　Ａｕ　　Ｎｉ、　Ａｕの順に全面蒸着を行った後。However, in back electrode deposition, Au-Ge,
After the entire surface was vapor-deposited in the order of Au, Ni, and Au.

フォトエツチングによりパターニングして網状電極（第
１図１ｂ＋　）　’ｆｃ形成する。さらにその際フォト
レジスト膜をマスクとして使用し、硫酸系エツチング液
を用い網状電極以外のＧａＡｓ面を深くエツチングを行
なう。その後、レジスト膜除去、及びダイシング金貨な
い各素子を分割し、本発明によるＧａＡ　ｓ赤外ＬＥＤ
が完成する。その結果、順方向を流Ｌｒ”−５０ｍＡ時
の順方向電圧Ｖ、は１．２７Ｖから１．２４　Ｙへ低下
し、さらに大電流Ｉ、＝４００ｍＡ時のＶ、は１．７９
Ｖから１．６５Ｙへ低下し九。またＩ　Ｐ　＝　５　Ｑ
　ｍＡ時の発光出力は従来と同等である。Patterning is performed by photoetching to form a mesh electrode (FIG. 1b+)'fc. Further, at this time, using a photoresist film as a mask, the GaAs surface other than the mesh electrode is deeply etched using a sulfuric acid-based etching solution. After that, the resist film was removed and each element was divided into parts without dicing, and the GaAs infrared LED according to the present invention was manufactured.
is completed. As a result, the forward voltage V when the forward flow Lr"-50 mA drops from 1.27 V to 1.24 Y, and the V when the large current I = 400 mA is 1.79
It decreased from V to 1.65Y. Also, I P = 5 Q
The light emission output at mA is the same as the conventional one.

ケお、以上の実施例は、　ＧａＡｓ赤外ＬＥＤの場合に
ついて述べたが、　ＧａＡ６ｔＡｓ赤外Ｉ、ＥＤの場合
にも適用可能である。さらに上記の素子分離はダイシン
グを使用したが、スクライプ法についても同様の効果が
期待できる。Note: Although the above embodiments have been described in the case of a GaAs infrared LED, they are also applicable to the case of a GaA6tAs infrared I and ED. Furthermore, although dicing was used for the above-mentioned element separation, similar effects can be expected with the scribe method.

〔発明の効果〕〔Effect of the invention〕

本発明によれば％ＧａＡｓ赤外ＬＥＤの基本構造ならび
に基本製造工程に大幅な変更をもたらすことなく、Ｇａ
Ａ　ｓ赤外ＬＥＤの発光出力を低下せしめることなく、
導電性接着剤と裏面電極間の接触抵抗を下げ、結果とし
て定電圧駆動時に高発光出力化をはかることができる。According to the present invention, GaAs infrared LED
Without reducing the light emission output of A s infrared LED,
The contact resistance between the conductive adhesive and the back electrode is lowered, and as a result, it is possible to achieve high light emission output when driven at a constant voltage.

さらにｌ子間分離のダイシングにおいて切シ残し量を少
なくした為。Furthermore, the amount of chips remaining during dicing for separation between 1 pieces has been reduced.

ブレーキング時におこる不定形破壊がなくなり。Eliminates amorphous damage that occurs during braking.

歩留向上にも効果がある。It is also effective in improving yield.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明によるＧａＡ　ｓ赤外発光ダイオードを
示し、（ａ）は断面図、ｔｂｌは裏面電極の構造を示す
平面図を示す。第２図は従来技術によるＧａＡｓ赤外発
光ダイオードを示す。（ａ）は従来形状のＬＥＤ、（ｂ
ｌは現状技術による改善例、Ｉｃ）はｔａｇ、　ｔｂ）
Ｋ共通する従来技術による裏面電極構造を示す平面図で
ある。 一〕、−１ 代理人　弁理士　　内　原　　　晋　　　・。 ＼−□ （区Ｊ　　　　　　　　　　　　　　　　　　　　　　
　　　　　　　　（Ｉｙ〕猶１　回 染２　グFIG. 1 shows a GaAs infrared light emitting diode according to the present invention, in which (a) is a cross-sectional view and tbl is a plan view showing the structure of the back electrode. FIG. 2 shows a GaAs infrared light emitting diode according to the prior art. (a) is a conventional shaped LED, (b)
l is an example of improvement based on current technology, Ic) is tag, tb)
FIG. 6 is a plan view showing a back electrode structure according to a conventional technique common to K; 1], -1 Agent: Susumu Uchihara, patent attorney. ＼−□ (Ward J
(Iy) 1st dyeing 2nd time

Claims (1)

【特許請求の範囲】[Claims] 　ＧａＡｓ系赤外発光ダイオードにおいて、裏面電極形
状が網目状構造を有し、かつ該電極部以外の結晶面がエ
ッチングされ凸凹状態もしくは穴状になっていることを
特徴とする赤外発光ダイオード。A GaAs-based infrared light emitting diode characterized in that the back electrode has a mesh structure, and the crystal plane other than the electrode portion is etched to form an uneven or hole shape.
JP59231902A 1984-11-02 1984-11-02 Infrared light emitting diode Pending JPS61110476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59231902A JPS61110476A (en) 1984-11-02 1984-11-02 Infrared light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59231902A JPS61110476A (en) 1984-11-02 1984-11-02 Infrared light emitting diode

Publications (1)

Publication Number Publication Date
JPS61110476A true JPS61110476A (en) 1986-05-28

Family

ID=16930832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59231902A Pending JPS61110476A (en) 1984-11-02 1984-11-02 Infrared light emitting diode

Country Status (1)

Country Link
JP (1) JPS61110476A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098263A (en) * 1989-09-05 1992-03-24 Kabushiki Kaisha Toyota Chuo Kenkyusho Pressure vibration damping device in combination of liquid column vibration damping means and pressure pulse absorbing means
JPH0613650A (en) * 1992-03-26 1994-01-21 Nec Corp Infrared light emitting element and its manufacture
WO2001061765A1 (en) * 2000-02-15 2001-08-23 Osram Opto Semiconductors Gmbh Semiconductor component which emits radiation, and method for producing the same
WO2002073705A2 (en) * 2001-03-09 2002-09-19 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component and method for producing the same
EP1263058A2 (en) * 2001-05-29 2002-12-04 Toyoda Gosei Co., Ltd. Light-emitting element
EP1276158A2 (en) * 2001-07-11 2003-01-15 LumiLeds Lighting U.S., LLC Light emitting diode with reduced far-field radiation pattern variation
DE10158754A1 (en) * 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Light emitting semiconductor component, uses conductive adhesive material for joining semiconductor body electrically and thermally to carrier
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EP1367656A2 (en) * 2002-05-31 2003-12-03 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting element
US6730939B2 (en) 2000-02-15 2004-05-04 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor device
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
JP2004221112A (en) * 2003-01-09 2004-08-05 Sharp Corp Oxide semiconductor light emitting element
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6897488B2 (en) 2000-11-06 2005-05-24 Osram Opto Semiconductors Gmbh Radiation-emitting chip
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Publication number Priority date Publication date Assignee Title
US5098263A (en) * 1989-09-05 1992-03-24 Kabushiki Kaisha Toyota Chuo Kenkyusho Pressure vibration damping device in combination of liquid column vibration damping means and pressure pulse absorbing means
JPH0613650A (en) * 1992-03-26 1994-01-21 Nec Corp Infrared light emitting element and its manufacture
EP2276075A1 (en) * 2000-02-15 2011-01-19 OSRAM Opto Semiconductors GmbH Radiation emitting semiconductor device and method for its production
WO2001061765A1 (en) * 2000-02-15 2001-08-23 Osram Opto Semiconductors Gmbh Semiconductor component which emits radiation, and method for producing the same
US7195942B2 (en) 2000-02-15 2007-03-27 Osram Gmbh Radiation emitting semiconductor device
US7205578B2 (en) 2000-02-15 2007-04-17 Osram Gmbh Semiconductor component which emits radiation, and method for producing the same
US6730939B2 (en) 2000-02-15 2004-05-04 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor device
US6897488B2 (en) 2000-11-06 2005-05-24 Osram Opto Semiconductors Gmbh Radiation-emitting chip
US7026659B2 (en) 2001-02-01 2006-04-11 Cree, Inc. Light emitting diodes including pedestals
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US7420222B2 (en) 2001-02-01 2008-09-02 Cree, Inc. Light emitting diodes including transparent oxide layers
US8426881B2 (en) 2001-02-01 2013-04-23 Cree, Inc. Light emitting diodes including two reflector layers
US8692277B2 (en) 2001-02-01 2014-04-08 Cree, Inc. Light emitting diodes including optically matched substrates
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
WO2002073705A3 (en) * 2001-03-09 2002-12-12 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component and method for producing the same
US7169632B2 (en) 2001-03-09 2007-01-30 Osram Gmbh Radiation-emitting semiconductor component and method for producing the semiconductor component
JP2004521498A (en) * 2001-03-09 2004-07-15 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング Beam emitting semiconductor device and method of manufacturing the same
US8138511B2 (en) 2001-03-09 2012-03-20 Osram Ag Radiation-emitting semiconductor component and method for producing the semiconductor component
WO2002073705A2 (en) * 2001-03-09 2002-09-19 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component and method for producing the same
EP1263058A3 (en) * 2001-05-29 2004-10-27 Toyoda Gosei Co., Ltd. Light-emitting element
US6946788B2 (en) 2001-05-29 2005-09-20 Toyoda Gosei Co., Ltd. Light-emitting element
EP1263058A2 (en) * 2001-05-29 2002-12-04 Toyoda Gosei Co., Ltd. Light-emitting element
EP1276158A3 (en) * 2001-07-11 2008-10-29 LumiLeds Lighting U.S., LLC Light emitting diode with reduced far-field radiation pattern variation
EP1276158A2 (en) * 2001-07-11 2003-01-15 LumiLeds Lighting U.S., LLC Light emitting diode with reduced far-field radiation pattern variation
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