JPH05101972A - Method for forming electrode on ceramic - Google Patents
Method for forming electrode on ceramicInfo
- Publication number
- JPH05101972A JPH05101972A JP24559891A JP24559891A JPH05101972A JP H05101972 A JPH05101972 A JP H05101972A JP 24559891 A JP24559891 A JP 24559891A JP 24559891 A JP24559891 A JP 24559891A JP H05101972 A JPH05101972 A JP H05101972A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- electrode
- substrate
- adhesion strength
- electroless plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、誘電体共振器、セラミ
ックスコンデンサ等に電極を形成するセラミックスへの
電極形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming electrodes on ceramics, which is for forming electrodes on dielectric resonators, ceramic capacitors and the like.
【０００２】[0002]
【従来の技術】一般にセラミックスコンデンサや誘電体
共振器素子などセラミックスを用いた電子部品用におけ
るセラミックス上への電極の形成には、無電解メッキ法
により導電性金属をセラミックス表面に化学的に析出さ
せ電極とする技術が広く用いられている。この無電解メ
ッキ法を用いたメッキ法には２つの方法が現在存在す
る。2. Description of the Related Art Generally, for forming electrodes on ceramics for electronic parts using ceramics such as ceramics capacitors and dielectric resonator elements, a conductive metal is chemically deposited on the surface of the ceramics by electroless plating. The technique of using electrodes is widely used. There are currently two plating methods using this electroless plating method.
【０００３】まずその１つの方法について詳細に以下に
述べる。例えば、対象とするセラミックスがチタン酸バ
リウムを主体とした基板の場合、先ず、該セラミックス
誘電体基板をアルカリ洗浄液にてセラミックスの表面を
充分に脱脂洗浄を行い、その後充分水洗した後、フッ酸
でその表面をエッチングを行い粗面化を行う。更に、そ
のエッチング液がセラミックス表面に存在する多孔内に
残らないよう充分に洗浄を行った後、塩化錫によりセン
シタイジング（感受性化）処理を行い、続いて塩化パラ
ジウムによりアクティベーティング（活性化）処理を行
い、その後、無電解メッキ処理を行って、セラミックス
表面に金属を化学的に析出させ電極を形成する。First, one method will be described in detail below. For example, when the target ceramic is a substrate mainly containing barium titanate, first, the ceramic dielectric substrate is thoroughly degreased and cleaned on the surface of the ceramic with an alkaline cleaning liquid, and then sufficiently rinsed with hydrofluoric acid. The surface is etched and roughened. Furthermore, after thoroughly cleaning the etching solution so that it does not remain in the pores existing on the ceramic surface, sensitizing treatment with tin chloride is performed, followed by activation with palladium chloride. ) Treatment, and then electroless plating treatment to chemically deposit a metal on the ceramic surface to form an electrode.
【０００４】金属の、此の析出機構としては塩化錫によ
るセンシタイジングの工程でセラミックス表面に塩化錫
の層が形成される。そして塩化パラジウムによるアクテ
ィベーティングの工程で、セラミックス表面に付着して
いた２価の錫がパラジウムイオンを還元すると同時に塩
化錫は酸化され４価の錫イオンとなる。即ち、セラミッ
クス表面で２価のパラジウムイオンが還元を受けパラジ
ウム金属となって析出し、これが無電解メッキ時の触媒
として作用すると考えられている。As a mechanism for depositing the metal, a tin chloride layer is formed on the ceramic surface in the step of sensitizing with tin chloride. Then, in the step of activating with palladium chloride, the divalent tin attached to the surface of the ceramic reduces palladium ions and at the same time tin chloride is oxidized into tetravalent tin ions. That is, it is considered that divalent palladium ions are reduced on the surface of the ceramics to be deposited as palladium metal, which acts as a catalyst during electroless plating.
【０００５】他の方法について以下に詳細に述べる。先
ず、セラミックス基板を酢酸亜鉛／エタノール溶液に浸
漬後、該基板を加熱処理し、その表面に酢酸亜鉛を主体
とした有機金属層を設ける。Another method will be described in detail below. First, after immersing a ceramics substrate in a zinc acetate / ethanol solution, the substrate is heat-treated to provide an organic metal layer mainly containing zinc acetate on the surface thereof.
【０００６】次に、酢酸亜鉛を主体とする有機金属層を
設けたセラミックス基板を塩化パラジウム溶液溶液中に
浸漬し、パラジウムをセラミックス表面に析出させ、ア
クティベーティング処理を行なう。Next, the ceramics substrate provided with the organometallic layer mainly composed of zinc acetate is immersed in a solution of palladium chloride solution to precipitate palladium on the surface of the ceramics, and an activating process is performed.
【０００７】このようにしてパラジウム置換したセラミ
ックス基板を無電解メッキ液中に浸漬し、その表面に金
属銅を化学的に析出させ、金属銅電極を形成する。The ceramic substrate thus substituted with palladium is immersed in an electroless plating solution, and metallic copper is chemically deposited on the surface of the electrolytic substrate to form a metallic copper electrode.
【０００８】[0008]
【発明が解決しようとする課題】セラミックス表面への
無電解メッキによる銅、ニッケル等の析出状態、特にセ
ラミックス表面への密着強度はセラミックスへの塩化錫
あるいはパラジウムの付着状態により大きく左右され
る。密着強度を増大させる事は、製造される電子部品例
えば、コンデンサや誘電体共振器の電気的特性を均一化
する働きを示し、これら素子の生産工程には欠くことの
できないものとなっている。従って、その強度を上げる
ため一般にセラミックス表面をフッ酸等でエッチングし
粗面化する工程が取られる。The state of deposition of copper, nickel, etc. by electroless plating on the surface of ceramics, particularly the adhesion strength to the surface of ceramics, is greatly influenced by the state of adhesion of tin chloride or palladium to the ceramics. Increasing the adhesion strength has a function of making the electrical characteristics of manufactured electronic parts, for example, capacitors and dielectric resonators uniform, and is indispensable for the production process of these elements. Therefore, in order to increase the strength, a step of roughening the ceramic surface by etching with hydrofluoric acid or the like is generally taken.
【０００９】此の工程、特にセラミックス表面の粗面化
処理において過剰な処理を行うとセラミックス自体が脆
くなり、またその表面の孔内には処理液が残存し、密着
強度を低下させると共に析出させた電極金属の腐食を発
生させ、製造した電子部品の信頼性を低下させる結果と
なる。また、逆に粗面化処理が足りない場合には、無電
解メッキによって形成された電極金属とセラミックスと
の機械的密着強度が足りず、またそのようにして得られ
た素子の電気的特性も劣るものとなる。If excessive treatment is carried out in this step, particularly in the roughening treatment of the ceramic surface, the ceramic itself becomes brittle, and the treatment liquid remains in the pores of the surface to lower the adhesion strength and cause precipitation. Corrosion of the electrode metal will occur, resulting in a decrease in reliability of the manufactured electronic component. On the contrary, when the surface roughening treatment is insufficient, the mechanical adhesion strength between the electrode metal formed by electroless plating and the ceramic is insufficient, and the electrical characteristics of the element thus obtained are also low. Will be inferior.
【００１０】此の問題を解決する無電解メッキ法として
前記後者の方法が存在する。此の方法では、フッ酸等強
い腐食性溶液を使用することが無く、セラミックスの微
細孔にこれら酸が残存する危惧が無いため析出させた電
極が経時的に腐食されるといった現象が全く無いため、
作成した素子の信頼性は高いものとなる。The latter method exists as an electroless plating method for solving this problem. This method does not use a strong corrosive solution such as hydrofluoric acid, and there is no danger of these acids remaining in the fine pores of ceramics, so there is no phenomenon that the deposited electrode is corroded with time. ,
The reliability of the created device is high.
【００１１】しかしながらこれらの無電解鍍金法による
電極形成法でも、析出させた金属のセラミックスへの機
械的密着強度が劣る。即ち、誘電性セラミックス材料と
電極を備えて成るセラミックス電子部品の無電解メッキ
法においてセラミックス基板表面に予め有機金属を主体
とする層を設け、その後に無電解メッキを行い電極を形
成する方法においては、無電解メッキの後に、電極を形
成した際、セラミックスと析出させた電極の接合界面に
は強い応力が掛かり、特にセラミックスと金属電極の間
に介在する有機金属層がセラミックスから剥離し易くな
る。However, even in the electrode forming method by these electroless plating methods, the mechanical adhesion strength of the deposited metal to the ceramic is inferior. That is, in an electroless plating method for a ceramic electronic component including a dielectric ceramic material and an electrode, a layer mainly composed of an organic metal is previously provided on the surface of the ceramic substrate, and then electroless plating is performed to form an electrode. When an electrode is formed after electroless plating, a strong stress is applied to the bonding interface between the ceramic and the deposited electrode, and in particular, the organometallic layer interposed between the ceramic and the metal electrode is easily separated from the ceramic.
【００１２】その結果、この方法で作成した電子部品の
電気的特性も安定でないという課題を有していた。As a result, there is a problem in that the electrical characteristics of the electronic component produced by this method are not stable.
【００１３】本発明は特に、後者の無電解メッキ法にお
けるセラミックスへの電極の機械的密着強度を改善し、
作成した電子部品の電気的特性を優れたものとする電極
形成法を提供しようとするものである。In particular, the present invention improves the mechanical adhesion strength of electrodes to ceramics in the latter electroless plating method,
It is an object of the present invention to provide an electrode forming method that makes an electronic component produced have excellent electrical characteristics.
【００１４】[0014]
【課題を解決するための手段】誘電性セラミックス材料
と電極を備えて成るセラミックス電子部品の無電解メッ
キ法においてセラミックス基板表面に予め金属酸化物を
主体とする層を設け、その後に無電解メッキを行い電極
を形成する方法において、無電解メッキを後に、電極を
形成した該基板を加熱処理を行う。Means for Solving the Problems In an electroless plating method for a ceramic electronic component including a dielectric ceramic material and an electrode, a layer mainly containing a metal oxide is previously provided on the surface of a ceramic substrate, and then electroless plating is performed. In the method of forming electrodes by performing electroless plating, the substrate on which the electrodes are formed is subjected to heat treatment after electroless plating.
【００１５】前記加熱処理は無電解鍍金で析出させる金
属が銅の場合、空気中で１００℃〜１６０℃で行い、非
酸化雰囲気中では１６０℃〜１０８３℃で行う。また、
析出させる金属がニッケルの場合、空気中で１００℃〜
３００℃で行い、銀の場合、非酸化雰囲気中で、３００
℃〜１１００℃で行う。When the metal to be deposited by electroless plating is copper, the heat treatment is performed at 100 ° C. to 160 ° C. in air, and at 160 ° C. to 1083 ° C. in a non-oxidizing atmosphere. Also,
When the metal to be deposited is nickel, the temperature is 100 ° C
Perform at 300 ℃, in the case of silver in a non-oxidizing atmosphere, 300
It is carried out at a temperature of from 1 to 1100 ° C.
【００１６】[0016]
【作用】誘電性セラミックス材料と電極を備えて成るセ
ラミックス電子部品の無電解メッキ法においてセラミッ
クス基板表面に予め有機金属を主体とする層を設け、そ
の後に無電解メッキを行い電極を形成方法において、無
電解メッキの後に、電極を形成した際、セラミックスと
析出させた電極の接合界面には強い応力が掛かり、特に
セラミックスと金属電極の間に介在する有機金属層がセ
ラミックスから剥離し易くなるが、電極を形成したセラ
ミックス基板を加熱処理を行う事により、有機金属層が
セラミックスへ充分焼鈍されると同時に形成されている
電極金属の持つ応力を緩和させる作用を与える。その結
果、形成した電極のセラミックスへの、密着強度が向上
する。In the method of electroless plating of a ceramic electronic component including a dielectric ceramic material and an electrode, a layer mainly composed of an organic metal is previously provided on the surface of a ceramic substrate, and then electroless plating is performed to form an electrode. When an electrode is formed after electroless plating, a strong stress is applied to the bonding interface between the ceramic and the deposited electrode, and in particular, the organic metal layer interposed between the ceramic and the metal electrode is easily separated from the ceramic, By heat-treating the ceramic substrate on which the electrodes are formed, the organic metal layer is sufficiently annealed to the ceramic, and at the same time, the stress of the electrode metal formed is relaxed. As a result, the adhesion strength of the formed electrode to the ceramic is improved.
【００１７】[0017]
【実施例】以下、本発明について実施例を用いて以下図
１（ａ）（ｂ）（ｃ）（ｄ）（ｅ）を用いて詳細に説明
する。 （実施例１）まず図１（ａ）に示すようにＢａＴｉ4Ｏ9
系の誘電体基板で厚さ約１ｍｍ、直径１０ｍｍのセラミ
ックスでできた基板１を用意する。基板１を１ｍｏｌ／
ｌの酢酸亜鉛（Ｚｎ（ＣＨ3ＣＯＯ）2・２Ｈ2Ｏ）エタ
ノール溶液に浸漬後、４００℃で１０分間加熱処理を行
い、図１（ｂ）に示す様に基板１表面に有機亜鉛を主体
とした有機金属層２を形成する。EXAMPLES The present invention will be described in detail below with reference to Examples with reference to FIGS. 1 (a), (b), (c), (d) and (e). Example 1 First, as shown in FIG. 1A, BaTi 4 O 9
A substrate 1 made of a ceramic material having a thickness of about 1 mm and a diameter of 10 mm is prepared. Substrate 1 is 1 mol /
After immersing in 1 liter of ethanol solution of zinc acetate (Zn (CH 3 COO) 2 .2H 2 O), heat treatment is carried out at 400 ° C. for 10 minutes, and as shown in FIG. And the organic metal layer 2 is formed.
【００１８】以上のようにして有機金属層２を表面に設
けた基板１を塩化パラジウム溶液（３００ｍｇ／ｌ塩化
パラジウム水溶液を塩酸にてｐＨ５に調整）中に１分間
浸漬し、亜鉛層をパラジウムに置換した後、１０％ホル
マリン溶液中に浸漬し析出させたパラジウムを還元する
ことにより、その活性化を行った。The substrate 1 on the surface of which the organometallic layer 2 was formed as described above was immersed in a palladium chloride solution (300 mg / l palladium chloride aqueous solution was adjusted to pH 5 with hydrochloric acid) for 1 minute to transform the zinc layer into palladium. After substitution, the palladium was dipped in a 10% formalin solution to reduce the deposited palladium, thereby activating the palladium.
【００１９】このようにしてパラジウム置換した基板１
を無電解メッキ液中に浸漬し、図１（ｃ）に示すように
有機金属層２の表面に金属銅３を化学的に析出させ形成
する。ここで、用いた無電解メッキ液は、硝酸銅２９ｇ
／ｌ、ロッセル塩４０ｇ／ｌ、カ性ソーダ４０ｇ／ｌ、
ホルムアルデヒド１６６ｇ／ｌとし、ｐＨ＝１１．５と
なるよう調整したものである。その後、銅鍍金層につい
て１６０℃の温度で１時間、非酸化性雰囲気（アルゴ
ン）中で加熱処理を行った。Substrate 1 thus substituted with palladium
Is immersed in an electroless plating solution to chemically deposit and form metallic copper 3 on the surface of the organic metal layer 2 as shown in FIG. 1 (c). The electroless plating solution used here is 29 g of copper nitrate.
/ L, Roussel salt 40 g / l, caustic soda 40 g / l,
Formaldehyde was adjusted to 166 g / l and pH was adjusted to 11.5. Then, the copper plating layer was heat-treated at a temperature of 160 ° C. for 1 hour in a non-oxidizing atmosphere (argon).
【００２０】こうして図１（ｄ）に示すように金属銅３
を析出させた基板１の端面４を切削研磨することによ
り、一対の銅電極５を形成する。Thus, as shown in FIG. 1D, metallic copper 3
The pair of copper electrodes 5 is formed by cutting and polishing the end surface 4 of the substrate 1 on which the copper is deposited.
【００２１】以上のようにして形成した金属銅のセラミ
ックスへの密着強度を調べるため、析出させた電極を３
ｍｍ角となるよう切削した領域を作成し、その部位に銅
線を半田にて付着し、そのリード線を引っ張ることによ
り調べた。その結果、９ｍｍ2当り３５ｋｇの引っ張り
強度を示すことが判った。In order to examine the adhesion strength of the metal copper formed as described above to the ceramics, the deposited electrode
An area was cut so as to be a square of mm, a copper wire was attached to the area by soldering, and the lead wire was pulled to examine. As a result, it was found that a tensile strength of 35 kg per 9 mm 2 was exhibited.
【００２２】本実施例の効果を調べるために、電極形成
後、加熱処理を行わない電子部品について、上記と同様
にして析出させた金属のセラミックスへの密着強度を調
べた。その結果、その密着強度は５．３ｋｇの値を示し
た（比較例１） さらに、従来の無電解メッキ法で金属銅の電極を形成し
た場合の金属の密着強度とを調べるために以下に示した
方法で電子部品を作成した（比較例２）。In order to investigate the effect of the present embodiment, the adhesion strength of the metal deposited in the same manner as above to the ceramics was examined for the electronic component which was not subjected to the heat treatment after the electrode formation. As a result, the adhesion strength thereof showed a value of 5.3 kg (Comparative Example 1). Further, it was shown below to examine the adhesion strength of the metal when the metal copper electrode was formed by the conventional electroless plating method. An electronic component was prepared by the above method (Comparative Example 2).
【００２３】先ず、ＢａＴｉ4Ｏ9系誘電体基板をアルカ
リ（１０％ＮａＯＨ溶液）脱脂を行い、次に、フッ酸溶
液（ＨＦ−ＨＮＯ3混合溶液）でセラミックス表面を粗
面化した。その後、塩化錫を用いシンセタイジング処理
を行い、続いて塩化パラジウムによりアクティベーティ
ング処理を行った。次に、無電解メッキによりその表面
に金属銅を化学的に析出させ金属銅電極を形成した。First, the BaTi 4 O 9 based dielectric substrate was degreased with an alkali (10% NaOH solution), and then the ceramic surface was roughened with a hydrofluoric acid solution (HF-HNO 3 mixed solution). Then, a synthesizing treatment was performed using tin chloride, and subsequently an activating treatment was performed using palladium chloride. Next, metal copper was chemically deposited on the surface by electroless plating to form a metal copper electrode.
【００２４】以上のようにした電極の密着強度は１０ｋ
ｇの値を示した。次に、電気特性を調べるためにコンデ
ンサを作成し、その構造を図１（ｅ）に示した。一対の
銅電極５にそれぞれ錫メッキ引き導線６を半田合金によ
り接合した後、熱硬化型エポキシ樹脂で樹脂カバー７を
用い全体を封止し測定用コンデンサ素子とした。The adhesion strength of the above electrode is 10 k
The value of g is shown. Next, a capacitor was prepared to examine the electrical characteristics, and its structure is shown in FIG. A tin-plated lead wire 6 was joined to each of the pair of copper electrodes 5 with a solder alloy, and then the whole was sealed with a thermosetting epoxy resin using a resin cover 7 to obtain a measuring capacitor element.
【００２５】このコンデンサの電気特性としてｔａｎδ
（誘電正接）およびその静電容量について調べた結果、
２５℃、周波数１ｋＨｚにおけるｔａｎδは本実施例で
作成したコンデンサに関して０．４８、比較例１，２に
よるものでそれぞれ０．７８、０．８６となり、また静
電容量に関しては本発明のものについて２３８、比較例
１，２についてはそれぞれ２３６、２３５であった。此
の結果、特に本実施例の電極形成法を用いたコンデンサ
が最も優れた特性（ｔａｎδ）を示す事が判明した。The electrical characteristics of this capacitor are tan δ
(Dielectric loss tangent) and its capacitance,
The tan δ at 25 ° C. and a frequency of 1 kHz is 0.48 for the capacitors prepared in this example and 0.78 and 0.86 for the capacitors prepared in Comparative Examples 1 and 2, respectively, and the capacitance is 238 for the invention. The comparative examples 1 and 2 were 236 and 235, respectively. As a result, it was found that the capacitor using the electrode forming method of this example exhibits the most excellent characteristic (tan δ).
【００２６】以上のことより本実施例によると、セラミ
ックスと電極との密着強度が改善された状態の電極形成
が可能である事が判明し、しかも、こうして作成した電
子部品の電気的特性を従来の形成法で作成したもの以上
のものとする事が可能である事が判明した。 （実施例２）実施例１においてセラミックス表面に形成
した有機金属層を酢酸亜鉛から酢酸錫に代えた以外は実
施例１と同様の方法でセラミックスコンデンサを構成
し、その特性を評価した。From the above, according to the present embodiment, it was found that it is possible to form an electrode in a state in which the adhesion strength between the ceramic and the electrode is improved. It was found that it is possible to make it more than the one created by the method of forming. (Example 2) A ceramic capacitor was constructed in the same manner as in Example 1 except that the organic metal layer formed on the ceramic surface in Example 1 was changed from zinc acetate to tin acetate, and its characteristics were evaluated.
【００２７】その結果、電気的特性および機械的密着強
度は実施例１とほぼ同等の特性を示した。 （実施例３）実施例１においてセラミックス表面に形成
した有機金属層を酢酸亜鉛からテトラ−ｉ−プロポキシ
チタンに代えた以外は実施例１と同様の方法でセラミッ
クスコンデンサを構成し、その特性を評価した。As a result, the electrical characteristics and mechanical adhesion strength were almost the same as in Example 1. (Example 3) A ceramic capacitor was constructed in the same manner as in Example 1 except that the organometallic layer formed on the ceramic surface in Example 1 was changed from zinc acetate to tetra-i-propoxy titanium, and its characteristics were evaluated. did.
【００２８】その結果、電気的特性および機械的密着強
度は実施例１とほぼ同等の特性を示した。 （実施例４）実施例３において行った、セラミックス表
面をテトラ−ｉ−プロポキシチタン溶液に浸漬した後に
行う加熱処理を本実施例では行わずに、該セラミックス
基板を大気中で暴露することにより、テトラ−ｉ−プロ
ポキシチタンを加水分解し、水酸化チタン層を主体とす
る層を形成した以外は実施例１と同様の方法でセラミッ
クスコンデンサを構成し、形成した電極の密着特性およ
び作成したコンデンサの電気的特性を評価した。As a result, the electrical characteristics and the mechanical adhesion strength were almost the same as those in Example 1. (Example 4) By subjecting the ceramic substrate to exposure in the atmosphere, the heat treatment performed in Example 3 after immersing the ceramic surface in the tetra-i-propoxytitanium solution is not performed. A ceramic capacitor was constructed in the same manner as in Example 1 except that tetra-i-propoxytitanium was hydrolyzed to form a layer mainly composed of a titanium hydroxide layer, and the adhesion characteristics of the formed electrode and the prepared capacitor The electrical characteristics were evaluated.
【００２９】その結果、電気的特性および機械的密着強
度は実施例１とほぼ同等の特性を示した。 （実施例５）実施例１において行った加熱処理時の雰囲
気を非酸化性雰囲気から酸化性雰囲気（大気中）とし、
その処理温度を５０℃、１００℃、１３０℃、１６０
℃、１８０℃の温度で行った以外は実施例１と同様の方
法でセラミックスコンデンサを構成し、その電気的特性
と電極のセラミックスへの密着強度を評価した。As a result, the electrical characteristics and mechanical adhesion strength were almost the same as those of Example 1. (Example 5) The atmosphere during the heat treatment performed in Example 1 was changed from a non-oxidizing atmosphere to an oxidizing atmosphere (in the air),
The processing temperature is 50 ° C, 100 ° C, 130 ° C, 160
A ceramic capacitor was constructed in the same manner as in Example 1 except that the temperature was set to 180 ° C. and 180 ° C., and its electrical characteristics and the adhesion strength of the electrode to the ceramic were evaluated.
【００３０】その結果、１００℃、１３０℃、１６０℃
で熱処理を行ったものは電気的特性および密着強度は実
施例１とほぼ同等の特性を示した。As a result, 100 ° C, 130 ° C, 160 ° C
The one subjected to the heat treatment in Example 1 showed almost the same electrical characteristics and adhesion strength as those of Example 1.
【００３１】５０℃で熱処理を行ったものは機械的密着
強度が熱処理を行わないものと同等の結果であった。The one subjected to the heat treatment at 50 ° C. had the same mechanical adhesion strength as the one not subjected to the heat treatment.
【００３２】更に１８０℃で熱処理を行ったものは実施
例１とほぼ同等の特性を示したが銅電極表面の酸化が進
み、銅表面が赤褐色となり、コンデンサのリ−ドを半田
付するさいに問題が生じた。従って、この温度で空気中
で加熱処理を行う事は好ましくないことが判った。 （実施例６）実施例１において行った加熱処理時の雰囲
気をアルゴンから窒素雰囲気に代え、その加熱処理温度
を１００℃、１６０℃、２００℃、４００℃、８００
℃、１０００℃、１０８３℃の温度で行った以外は実施
例１と同様の方法でセラミックスコンデンサを構成し
た。作成したコンデンサの電気的特性と電極のセラミッ
クスへの密着強度を実施例１と同様に評価した。Further heat treatment at 180 ° C. showed almost the same characteristics as in Example 1, but oxidation of the copper electrode surface proceeded, the copper surface became reddish brown, and when the lead of the capacitor was soldered. There was a problem. Therefore, it was found that heat treatment in air at this temperature is not preferable. (Example 6) The atmosphere during the heat treatment performed in Example 1 was changed from argon to a nitrogen atmosphere, and the heat treatment temperature was 100 ° C, 160 ° C, 200 ° C, 400 ° C, 800.
A ceramic capacitor was constructed in the same manner as in Example 1 except that the heating was carried out at temperatures of 1000C, 1083C, and 1000C. The electrical characteristics of the produced capacitor and the adhesion strength of the electrode to the ceramic were evaluated in the same manner as in Example 1.
【００３３】その結果、１００℃、１６０℃、２００
℃、４００℃、８００℃、１０００℃、１０８３℃で熱
処理を行ったものの電気的特性および機械的密着強度は
実施例１とほぼ同等の特性を示した。As a result, 100 ° C., 160 ° C., 200
The electrical properties and the mechanical adhesion strength of the products subjected to the heat treatment at ℃, 400 ℃, 800 ℃, 1000 ℃, 1083 ℃ showed almost the same characteristics as in Example 1.
【００３４】但し、１００℃で熱処理を行ったものは電
気的特性および機械的密着強度は空気中１００℃で加熱
処理を行ったものと同等の結果を示した。 （実施例７）実施例１にて形成した電極金属として銅の
代わりに無電解ニッケルメッキ液を用いニッケルを析出
させ、かつニッケル電極を形成した基板の加熱処理条件
として、空気中５０℃、１００℃、１５０℃、２００
℃、２５０℃、３００℃、３５０℃の温度で行った以外
は実施例１と同様の方法でセラミックスコンデンサを構
成した。作成したコンデンサの電気的特性および電極の
セラミックスへの密着強度を評価した。However, the one heat-treated at 100 ° C. showed the same electrical characteristics and mechanical adhesion strength as the one heat-treated at 100 ° C. in air. (Example 7) Electroless nickel plating solution was used instead of copper as the electrode metal formed in Example 1 to deposit nickel, and the substrate on which the nickel electrode was formed was heated at 50 ° C in air at 100 ° C. ℃, 150 ℃, 200
A ceramic capacitor was constructed in the same manner as in Example 1 except that the temperature was 250 ° C, 250 ° C, 300 ° C, and 350 ° C. The electrical characteristics of the produced capacitors and the adhesion strength of electrodes to ceramics were evaluated.
【００３５】その結果、１００℃、１５０℃、２００
℃、２５０℃、３００℃で加熱処理を行ったものは電気
的特性および機械的密着強度は実施例１とほぼ同等の特
性を示した。As a result, 100 ° C., 150 ° C., 200
The ones which were heat-treated at 250 ° C., 250 ° C. and 300 ° C. showed almost the same electrical characteristics and mechanical adhesion strength as those of Example 1.
【００３６】また、５０℃で加熱処理を行ったものは加
熱処理を行わないものと同等の密着強度を示した。更
に、３５０℃で加熱処理を行ったものは実施例１とほぼ
同等の特性を示したが、ニッケル表面の酸化が進み、電
極の抵抗が増大する傾向を示し、好ましくない結果を与
えた。 （実施例８）実施例７において行った加熱処理の条件を
窒素雰囲気中１００℃、３００℃、６００℃、９００
℃、１１００℃、１２００℃の温度で行った以外は実施
例７と同様の方法でセラミックスコンデンサを構成し、
その電気的特性および電極のセラミックスへの密着強度
を評価した。Further, the one subjected to the heat treatment at 50 ° C. showed the same adhesion strength as the one not subjected to the heat treatment. Further, the one subjected to the heat treatment at 350 ° C. showed almost the same characteristics as in Example 1, but the oxidation of the nickel surface proceeded, and the resistance of the electrode tended to increase, giving an unfavorable result. (Example 8) The conditions of the heat treatment performed in Example 7 were set to 100 ° C, 300 ° C, 600 ° C, 900 in a nitrogen atmosphere.
A ceramic capacitor was constructed in the same manner as in Example 7, except that the temperature was 1,100 ° C., 1,200 ° C.
The electrical characteristics and the adhesion strength of the electrodes to the ceramics were evaluated.
【００３７】その結果、１００℃、３００℃、６００
℃、９００℃、１０００℃、１１００℃で加熱処理を行
ったものは電気的特性および機械的密着強度は実施例１
とほぼ同等の特性を示した。As a result, 100 ° C., 300 ° C., 600
The sample subjected to the heat treatment at 90 ° C., 900 ° C., 1000 ° C., and 1100 ° C. had electrical properties and mechanical adhesion strength of Example 1.
It showed almost the same characteristics as.
【００３８】又、１００℃で加熱処理を行ったものの電
気的特性および密着強度は空気中で１００℃で加熱処理
を行ったものと同等の結果を示した。更に、１２００℃
で行ったものの密着強度は実施例１とほぼ同等の特性を
示したが、電気的特性はかなり悪い結果を与えた。 （実施例９）実施例２において使用したセラミックス基
板をＮｂ2Ｔｉ2Ｏ7系の誘電体に代えた以外実施例２と
同様に電極を形成し、該セラミックス基板を加熱処理を
行うことでセラミックスコンデンサを構成した。Further, the electrical characteristics and adhesion strength of the product subjected to the heat treatment at 100 ° C. were the same as those of the product subjected to the heat treatment at 100 ° C. in air. Furthermore, 1200 ° C
Although the adhesion strength of the same as that of Example 1 was almost the same as that of Example 1, the electrical characteristics gave a rather bad result. (Example 9) An electrode was formed in the same manner as in Example 2 except that the ceramic substrate used in Example 2 was replaced with a Nb 2 Ti 2 O 7 -based dielectric, and the ceramic substrate was heat-treated to obtain a ceramic capacitor. Configured.
【００３９】また、比較のために加熱処理をしない状態
のセラミックスコンデンサを作成した。更に、有機錫層
を形成しない従来の方法で、即ち基板表面を予めエッチ
ングする事により粗面化する工程を使った方法でセラミ
ックスコンデンサを構成した。For comparison, a ceramic capacitor not heat-treated was prepared. Further, a ceramic capacitor was constructed by a conventional method in which an organic tin layer was not formed, that is, a method using a step of roughening the surface of a substrate by etching in advance.
【００４０】これらのセラミックスコンデンサの特性は
実施例１と同様の方法で評価した。その結果、本実施例
に基づき作成したもののtanδは０．５２を示し、加熱
しょりをしないもので０．６５、更に、従来の方法で作
成したもののtan δは０．７２を示した。さらに電極の
密着強度は本実施例により作成したもので１５Ｋｇ／９
mm2、加熱処理を行わないもので１１．５Ｋｇ／９mm2を
示し、従来法によるので１１Ｋｇ／９mm2の値を示し
た。The characteristics of these ceramic capacitors were evaluated in the same manner as in Example 1. As a result, the tan δ of the sample prepared according to this example was 0.52, the tan δ of the sample without heating was 0.65, and the tan δ of the sample prepared by the conventional method was 0.72. Further, the adhesion strength of the electrode is 15 Kg / 9 according to the one prepared in this example.
mm 2, shows a 11.5 kg / 9 mm 2 in which not heat treated, showed a value of 11 Kg / 9 mm 2 because according to the conventional method.
【００４１】この結果、電気的特性ならびに密着強度共
に本実施例によるものが優れている事が判明した。 （実施例１０）実施例９にてセラミックス表面に形成し
た有機金属層を有機錫からトリ-n-ブトキシバナジル(VO
(O-n-C4H9)3)に代えた以外実施例９と同様にして銅電極
をセラミックス表面に形成し、該基板をアルゴン雰囲気
中で３５０℃の基、１時間加熱し、ディスク端面の電極
を切削する事によりセラミックスコンデンサを作成し
た。As a result, it was found that the electrical characteristics and the adhesion strength of this example were excellent. (Example 10) The organic metal layer formed on the ceramic surface in Example 9 was formed from organotin by adding tri-n-butoxyvanadyl (VO).
A copper electrode was formed on the ceramic surface in the same manner as in Example 9 except that (OnC 4 H 9 ) 3 ) was replaced, and the substrate was heated in an argon atmosphere at 350 ° C. for 1 hour to remove the electrode on the disk end surface. A ceramic capacitor was created by cutting.
【００４２】但し、有機金属層の形成は、先ずセラミッ
クス基板をトリ-n-ブトキシバナジル(VO(O-n-C4H9)3)／
エタノール溶液中に浸漬し、その後、該基板を空気中で
４００℃に加熱処理し、誘電体基板上にトリ-n-ブトキ
シバナジル(VO(O-n-C4H9)3)層を形成した。However, in order to form the organic metal layer, first, the ceramic substrate is formed with tri-n-butoxyvanadyl (VO (OnC 4 H 9 ) 3 ) /
After being immersed in an ethanol solution, the substrate was heat-treated in air at 400 ° C. to form a tri-n-butoxyvanadyl (VO (OnC 4 H 9 ) 3 ) layer on the dielectric substrate.
【００４３】比較の為に電極形成後の加熱処理を行わな
いセラミックスコンデンサを作成した。For comparison, a ceramic capacitor which was not subjected to the heat treatment after the electrode formation was prepared.
【００４４】これらセラミックスコンデンサの電気特性
および密着強度を測定した結果、電気的特性は何れもほ
ぼ同等の特性を示した。しかし、電極の密着強度は本発
明により作成したもので１３．５Ｋｇ／９mm2、加熱処
理をしないもので７．５Ｋｇ／９mm2の値を示した。As a result of measuring the electric characteristics and the adhesion strength of these ceramic capacitors, the electric characteristics were almost the same. However, the adhesion strength of the electrode is 13.5 kg / 9 mm 2 in those created by the present invention, it showed a value of 7.5 kg / 9 mm 2 in which no heat treatment.
【００４５】以上のことより本発明により作成したもの
については、特に密着強度の点で従来以上のものとなる
ことが判った。 （実施例１１）セラミックス空洞共振器を本発明の方法
で形成した。以下にその詳細を述べる。From the above, it was found that the product prepared according to the present invention is more excellent than the conventional one, particularly in terms of adhesion strength. Example 11 A ceramic cavity resonator was formed by the method of the present invention. The details will be described below.
【００４６】使用したセラミックス材料としてはＭｇＴ
ｉＯ3−ＣａＴｉＯ3系の誘電率２５のもので、図２に示
した構造の物を用いた。このセラミックス表面の８、
９、１０、１１面に実施例１と同様に有機金属として酢
酸亜鉛を塗布し、空気中で４００℃の加熱を行い、塩化
パラジウムによりセラミックス表面の活性化処理を行っ
た後、無電解メッキ法により金属銅を析出させ、さらに
電解メッキにより銅を厚付けし電極とした。その後、該
セラミックス全体を１６０℃の温度で１時間空気中で加
熱処理を行った。その後、面１１を切削研磨し、該面１
１の銅を除き、チューニングを行うことにより空洞共振
器を組み立てた。As the ceramic material used, MgT
An iO 3 —CaTiO 3 system having a dielectric constant of 25 and the structure shown in FIG. 2 was used. 8 of this ceramic surface
As in Example 1, zinc acetate was applied as an organic metal to the 9, 10, and 11 surfaces, heated at 400 ° C. in air, and activated on the ceramic surface with palladium chloride, followed by electroless plating. To deposit metallic copper, and further electrolytically plating copper to thicken the electrode. Then, the whole ceramics was heat-treated in air at a temperature of 160 ° C. for 1 hour. After that, the surface 11 is cut and polished so that the surface 1
A cavity was assembled by removing the copper of 1 and performing tuning.
【００４７】こうして組み立てた共振器のＱ値は４１２
（ｆ0＝９３０ＭＨｚ）という高い値を示した。この銅
電極のセラミックスにたいする密着強度は２７ｋｇ／９
mm2の値を示した。The Q value of the resonator thus assembled is 412.
A high value of (f0 = 930 MHz) was shown. The adhesion strength of this copper electrode to ceramics is 27 kg / 9.
The value in mm 2 is shown.
【００４８】比較例として、電極を形成したセラミック
スの加熱処理を行わないで作成した共振器の電気的特性
Ｑ値は３７５（ｆ0＝９２５ＭＨｚ）であった。また電
の極密着強度は１８ｋｇの値を示した。As a comparative example, the Q value of the electrical characteristics of the resonator produced without heat-treating the ceramic having electrodes was 375 (f0 = 925 MHz). Further, the electric pole adhesion strength showed a value of 18 kg.
【００４９】以上の結果、本実施例による所の加熱処理
工程を経た空洞共振器は加熱処理をしないもの以上の優
れた特性を示す事が判明した。 （実施例１２）実施例１１でセラミックス表面に形成し
た酢酸亜鉛層を酢酸錫に代えた以外は実施例１１と同様
の方法で誘電体共振器を構成し、その特性を評価した。As a result of the above, it was found that the cavity resonator which has undergone the heat treatment step according to the present embodiment exhibits superior characteristics to those which are not subjected to the heat treatment. (Example 12) A dielectric resonator was constructed in the same manner as in Example 11 except that the zinc acetate layer formed on the ceramic surface was replaced with tin acetate, and its characteristics were evaluated.
【００５０】その結果、電気的特性および機械的密着強
度は実施例１１と同等の特性を示した。As a result, the electrical characteristics and the mechanical adhesion strength showed the same characteristics as in Example 11.
【００５１】以上のことより本発明により形成した共振
器の電気的特性及び電極の密着強度は従来のものと同等
以上の誘電体共振器が得られることが判った。 （実施例１３）実施例１１でセラミックス表面に形成し
た酢酸亜鉛層をテトラ−ｉ−プロポキシチタンに代えた
以外は実施例１１と同様の方法で誘電体共振器をを構成
し、その特性を評価した。From the above, it was found that a dielectric resonator having electric characteristics and electrode adhesion strength of the resonator formed according to the present invention, which is equal to or higher than the conventional one, can be obtained. (Example 13) A dielectric resonator was constructed in the same manner as in Example 11 except that the zinc acetate layer formed on the ceramic surface in Example 11 was replaced with tetra-i-propoxytitanium, and its characteristics were evaluated. did.
【００５２】その結果、電気的特性および機械的密着強
度は実施例１１と、全く同等の特性を示した。As a result, the electrical characteristics and the mechanical adhesion strength were exactly the same as those of Example 11.
【００５３】以上のことより本実施例により形成した共
振器の電気的特性及び電極の密着強度は従来のものと同
等以上の誘電体共振器が得られることが判った。 （実施例１４）実施例１１でセラミックス表面に形成し
た酢酸亜鉛層を水酸化チタンを主体とする層に代えた以
外は実施例１１と同様の方法で誘電体共振器を構成し、
その特性を評価した。From the above, it was found that a dielectric resonator having electric characteristics and electrode adhesion strength of the resonator formed according to the present embodiment, which is equal to or higher than the conventional one, can be obtained. (Example 14) A dielectric resonator was constructed in the same manner as in Example 11 except that the zinc acetate layer formed on the ceramic surface in Example 11 was replaced with a layer mainly containing titanium hydroxide.
Its characteristics were evaluated.
【００５４】その結果、電気的特性および機械的密着強
度は実施例１１と、全く同等の特性を示した。As a result, the electrical characteristics and the mechanical adhesion strength were exactly the same as those of Example 11.
【００５５】以上のことより本実施例により形成した共
振器の電気的特性及び電極の密着強度は従来のものと同
等以上の誘電体共振器が得られることが判った。From the above, it was found that a dielectric resonator having electric characteristics and electrode adhesion strength of the resonator formed according to the present embodiment, which is equal to or higher than the conventional one, can be obtained.
【００５６】なお、本実施例においてはセラミックス表
面に設ける有機金属層として有機亜鉛、有機錫、有機チ
タン、水酸化チタンあるいは有機バナジウムを用いた
が、有機珪素、有機ニオブ等の他の有機金属を用いても
同様の効果が得られることはいうまでもなく、これら有
機金属に限定されるものではない。In this embodiment, organic zinc, organic tin, organic titanium, titanium hydroxide or organic vanadium is used as the organic metal layer provided on the ceramic surface, but other organic metals such as organic silicon and organic niobium may be used. Needless to say, the same effect can be obtained even if it is used, and it is not limited to these organic metals.
【００５７】また、本発明は実施例に挙げたような単一
元素の有機金属に限定されるものではなく、これら複数
の有機金属の混合物あるいは化合物にも応用されること
は周知の通りである。Further, it is well known that the present invention is not limited to the single-element organic metals as mentioned in the examples, but can be applied to a mixture or compound of these plural organic metals. ..
【００５８】又、更に本発明ではセラミックスコンデン
サならびに誘電体共振器について述べたが、その電気的
特性、機械的密着強度より、これら素子に限らず高周波
用回路基板、マイクロ波集積回路用素子などセラミック
ス電子部品一般に等しく適用出来るものである。Further, although the present invention describes a ceramic capacitor and a dielectric resonator, not only these elements but also high frequency circuit boards, microwave integrated circuit elements, and other ceramics are considered because of their electrical characteristics and mechanical adhesion strength. It is equally applicable to electronic components in general.
【００５９】[0059]
【発明の効果】本発明によると、セラミックス材料表面
に予め有機金属層を主体とする層を設け、その後塩化パ
ラジウムによりセラミックス表面の活性化を行い、然る
後、無電解メッキ法によりセラミックスへ電極を形成す
る方法において、電極を形成したセラミックス基板を、
更に加熱処理を行うことにより電極のセラミックスへの
密着強度を向上させる事が出来ると共に、作成した素子
の電気的特性を優れたものにさせる効果がある事が判明
した。According to the present invention, a layer mainly composed of an organic metal layer is previously provided on the surface of a ceramic material, and then the surface of the ceramic is activated with palladium chloride, and thereafter, an electrode is applied to the ceramic by an electroless plating method. In the method for forming a
Further, it has been found that the heat treatment can improve the adhesion strength of the electrode to the ceramics and at the same time have the effect of making the electrical characteristics of the produced element excellent.
【００６０】[0060]
【００６１】[0061]
【図１】（ａ）本発明の一実施例におけるセラミックス
への電極形成方法を用いたセラミックスコンデンサの製
造方法を示す側面図 （ｂ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図 （ｃ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図 （ｄ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図 （ｅ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図1A is a side view showing a method of manufacturing a ceramic capacitor using an electrode forming method on ceramics according to an embodiment of the present invention, and FIG. 1B is a side view showing an electrode forming method on ceramics according to an embodiment of the present invention. Side view showing a method for producing a ceramic capacitor (c) A side view showing a method for producing a ceramic capacitor using an electrode forming method on a ceramic according to an embodiment of the present invention (d) To a ceramic according to an embodiment of the present invention Side view showing a method of manufacturing a ceramic capacitor using the electrode forming method of (e) A side view showing a method of manufacturing a ceramic capacitor using the method of forming an electrode on ceramics according to an embodiment of the present invention
【００６２】[0062]
【図２】本発明の一実施例によるセラミックスへの電極
形成方法を用いた誘電体共振器の斜視図FIG. 2 is a perspective view of a dielectric resonator using an electrode forming method on ceramics according to an embodiment of the present invention.
【００６３】[0063]
１ 基板 ２ 有機金属層 ３ 金属銅 ４ 端面 ５ 銅電極 ６ 錫メッキ引き銅線 ７ 樹脂カバー 1 Substrate 2 Organic Metal Layer 3 Metal Copper 4 End Face 5 Copper Electrode 6 Tin-Plated Copper Wire 7 Resin Cover
【手続補正書】[Procedure amendment]
【提出日】平成４年１１月１６日[Submission date] November 16, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００５９[Correction target item name] 0059
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００５９】[0059]
【発明の効果】本発明によると、セラミックス材料表面
に予め有機金属層を主体とする層を設け、その後塩化パ
ラジウムによりセラミックス表面の活性化を行い、然る
後、無電解メッキ法によりセラミックスへ電極を形成す
る方法において、電極を形成したセラミックス基板を、
更に加熱処理を行うことにより電極のセラミックスへの
密着強度を向上させる事が出来ると共に、作成した素子
の電気的特性を優れたものにさせる効果がある事が判明
した。According to the present invention, a layer mainly composed of an organic metal layer is previously provided on the surface of a ceramic material, and then the surface of the ceramic is activated with palladium chloride, and thereafter, an electrode is applied to the ceramic by an electroless plating method. In the method for forming a
Further, it has been found that the heat treatment can improve the adhesion strength of the electrode to the ceramics and at the same time have the effect of making the electrical characteristics of the produced element excellent.
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Name of item to be corrected] Brief description of the drawing
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図面の簡単な説明】[Brief description of drawings]
【図１】（ａ）本発明の一実施例におけるセラミックス
への電極形成方法を用いたセラミックスコンデンサの製
造方法を示す側面図 （ｂ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図 （ｃ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図 （ｄ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図 （ｅ）本発明の一実施例におけるセラミックスへの電極
形成方法を用いたセラミックスコンデンサの製造方法を
示す側面図1A is a side view showing a method of manufacturing a ceramic capacitor using an electrode forming method on ceramics according to an embodiment of the present invention, and FIG. 1B is a side view showing an electrode forming method on ceramics according to an embodiment of the present invention. Side view showing a method for producing a ceramic capacitor (c) A side view showing a method for producing a ceramic capacitor using an electrode forming method on a ceramic according to an embodiment of the present invention (d) To a ceramic according to an embodiment of the present invention Side view showing a method of manufacturing a ceramic capacitor using the electrode forming method of (e) A side view showing a method of manufacturing a ceramic capacitor using the method of forming an electrode on ceramics according to an embodiment of the present invention
【図２】本発明の一実施例によるセラミックスへの電極
形成方法を用いた誘電体共振器の斜視図FIG. 2 is a perspective view of a dielectric resonator using an electrode forming method on ceramics according to an embodiment of the present invention.
【符号の説明】 １ 基板 ２ 有機金属層 ３ 金属銅 ４ 端面 ５ 銅電極 ６ 錫メッキ引き銅線 ７ 樹脂カバー[Explanation of symbols] 1 substrate 2 organic metal layer 3 metallic copper 4 end face 5 copper electrode 6 tin-plated copper wire 7 resin cover
───────────────────────────────────────────────────── フロントページの続き (72)発明者 多木 宏光 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiromitsu Taki 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (5)
し、前記有機金属層表面を塩化パラジウムによる活性化
処理し、前記有機金属層上に無電解メッキ法により所望
の電極を形成し、その後に加熱処理を行った事を特徴と
するセラミックスへの電極形成方法。1. An organic metal layer is formed on the surface of a ceramic substrate, the surface of the organic metal layer is activated with palladium chloride, a desired electrode is formed on the organic metal layer by electroless plating, and thereafter, the desired electrode is formed. A method for forming an electrode on ceramics, characterized by being subjected to heat treatment.
０℃〜１６０℃で行うことを特徴とする請求項１記載の
セラミックスへの電極形成方法。2. The electrode is made of copper and the heat treatment is performed in air.
The method for forming an electrode on ceramics according to claim 1, wherein the method is performed at 0 ° C to 160 ° C.
気中１６０℃〜１０８３℃で行うことを特徴とする請求
項１記載のセラミックスへの電極形成方法。3. The method for forming an electrode on ceramics according to claim 1, wherein the electrode is formed of copper and the heat treatment is performed at 160 ° C. to 1083 ° C. in a non-oxidizing atmosphere.
空気中１００℃〜３００℃で行うことを特徴とする請求
項１記載のセラミックスへの電極形成方法。4. The method for forming an electrode on ceramics according to claim 1, wherein the electrode is made of nickel and the heat treatment is performed in air at 100 ° C. to 300 ° C.
非酸化雰囲気中３００℃〜１１００℃で行うことを特徴
とする請求項１記載のセラミックスへの電極形成方法。5. The method for forming an electrode on ceramics according to claim 1, wherein the electrode is made of nickel and the heat treatment is performed at 300 ° C. to 1100 ° C. in a non-oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24559891A JPH05101972A (en) | 1991-09-25 | 1991-09-25 | Method for forming electrode on ceramic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24559891A JPH05101972A (en) | 1991-09-25 | 1991-09-25 | Method for forming electrode on ceramic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05101972A true JPH05101972A (en) | 1993-04-23 |
Family
ID=17136107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24559891A Pending JPH05101972A (en) | 1991-09-25 | 1991-09-25 | Method for forming electrode on ceramic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05101972A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006152431A (en) * | 2004-10-21 | 2006-06-15 | Alps Electric Co Ltd | Plating substrate, electroless plating method, and circuit forming method using the same |
| US8058592B2 (en) | 2007-03-27 | 2011-11-15 | Denso Corporation | Ceramic heater, gas sensor, and method of producing ceramic heater |
| JP2013193954A (en) * | 2012-03-15 | 2013-09-30 | Dh Holdings Co Ltd | Method for producing nickel coating nanocarbon by using electroless plating |
-
1991
- 1991-09-25 JP JP24559891A patent/JPH05101972A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006152431A (en) * | 2004-10-21 | 2006-06-15 | Alps Electric Co Ltd | Plating substrate, electroless plating method, and circuit forming method using the same |
| JP4559936B2 (en) * | 2004-10-21 | 2010-10-13 | アルプス電気株式会社 | Electroless plating method and circuit forming method using this method |
| US8058592B2 (en) | 2007-03-27 | 2011-11-15 | Denso Corporation | Ceramic heater, gas sensor, and method of producing ceramic heater |
| JP2013193954A (en) * | 2012-03-15 | 2013-09-30 | Dh Holdings Co Ltd | Method for producing nickel coating nanocarbon by using electroless plating |
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