JPH0485951A - Hollow package for semiconductor element with improved moisture resistance - Google Patents

Hollow package for semiconductor element with improved moisture resistance

Info

Publication number
JPH0485951A
JPH0485951A JP2200002A JP20000290A JPH0485951A JP H0485951 A JPH0485951 A JP H0485951A JP 2200002 A JP2200002 A JP 2200002A JP 20000290 A JP20000290 A JP 20000290A JP H0485951 A JPH0485951 A JP H0485951A
Authority
JP
Japan
Prior art keywords
package
hollow package
resin
hollow
thermosetting resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2200002A
Other languages
Japanese (ja)
Other versions
JP2837747B2 (en
Inventor
Kaoru Tominaga
薫 冨永
Shigeru Katayama
茂 片山
Junichi Yoshitake
吉武　順一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Petrochemical Industries Ltd
Original Assignee
Mitsui Petrochemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Petrochemical Industries Ltd filed Critical Mitsui Petrochemical Industries Ltd
Priority to JP2200002A priority Critical patent/JP2837747B2/en
Publication of JPH0485951A publication Critical patent/JPH0485951A/en
Application granted granted Critical
Publication of JP2837747B2 publication Critical patent/JP2837747B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To efficiently prevent water from intruding by covering a thermosetting resin hollow package with a very-low-water-permeability thermoplastic resin composition. CONSTITUTION:A hollow package to air-tightly seal a semiconductor element 7 consists of an inner component having lid bonding parts 3 and a semiconductor chip bonding part 2 which are made of thermosetting resin 1 and an outer component made of thermoplastic resin 5 adjacent to the inner component. Epoxy, polyimide, phenol, unsaturated polyester, or silicone resin is used as the thermosetting resin composing the inner layer of the package. Polyphenylene sulphide, polyether sulphide, polybutylene terephthalate, or polyether etherketone is used as the very-low-water-permeability thermoplastic resin. Thereby an integrated high-moisture-resistance hollow package is obtained.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体素子用の中空パッケージに関するもの
であって、より詳細には、パッケージ本体を内部が熱硬
化性樹脂からなる構造体とし、それに隣接する外面を熱
可塑性樹脂で一体成形した、耐湿性の改良された半導体
素子用の中空パッケージに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a hollow package for semiconductor elements, and more specifically, the present invention relates to a hollow package for semiconductor elements, and more specifically, the package body is a structure whose inside is made of a thermosetting resin, The present invention relates to a hollow package for a semiconductor element having improved moisture resistance and having an outer surface adjacent thereto integrally molded with thermoplastic resin.

（従来の技術及びその問題点） ＩＣ，ＬＳＩなどの半導体素子は、周囲の温度や湿度の
変化、あるいは微細なゴミやほこりに影響され、その特
性が微妙に変化してしまうことや、機械的振動や衝撃に
よって破損し易いことなどの理由で半導体素子を封止し
たパッケージとして使用に供されている。(Prior art and its problems) Semiconductor elements such as ICs and LSIs are affected by changes in ambient temperature and humidity, or by minute particles and dust, resulting in subtle changes in their characteristics, and mechanical Because it is easily damaged by vibration or impact, it is used as a package in which semiconductor elements are sealed.

パッケージ方式としては、大別して気密封止方式と樹脂
封止方式とに分けられ、気密封止方式では、−射的には
セラミックスが用いられているが、熱硬化性樹脂を用い
ることも試みられている。すなわち、箱形樹脂成形体の
中央部に設けられたリードフレームのアイランドに接着
剤によって固着された半導体素子は、インサート成形に
よって樹脂成形体内に封入され、その両端がバッケ−ジ
の内側と外側に開放されたリードフレームとボンディン
グワイヤーによって連結されている。Package methods can be broadly divided into hermetic sealing methods and resin sealing methods.In hermetic sealing methods, ceramics are typically used, but attempts have also been made to use thermosetting resins. ing. In other words, the semiconductor element is fixed with adhesive to an island of a lead frame provided in the center of a box-shaped resin molded body, and is encapsulated within the resin molded body by insert molding, with both ends facing the inside and outside of the package. It is connected by an open lead frame and bonding wire.

また樹脂成形体の上面は透明あるいは不透明な合成樹脂
板、ガラス扱、セラミックス、金属などの蓋材を接着剤
によって固着し、気密封止を行うものであるが、このよ
うな封止手段を講じても、時間の経過に伴ないパッケー
ジ内部に微量の水分が浸入し、半導体素子の機能を低下
せしめ、やがては使用不能の状態となってしまうという
問題点があった。In addition, the upper surface of the resin molded body is hermetically sealed by fixing a lid material such as a transparent or opaque synthetic resin plate, glass material, ceramics, or metal with an adhesive. However, there is a problem in that a small amount of moisture enters the inside of the package over time, degrading the functionality of the semiconductor element and eventually rendering it unusable.

そこで、水分の浸入経路として考えられる蓋の接着部、
あるいはリードフレームの封入部について入念な密封手
段を施こしても、依然として経時による水分の浸入を防
止することができず、その対策に苦慮しているのが現実
である。Therefore, the adhesive part of the lid, which is thought to be a route for moisture to infiltrate,
Alternatively, even if careful sealing measures are applied to the enclosing portion of the lead frame, it is still not possible to prevent the infiltration of moisture over time, and the reality is that countermeasures against this cannot be prevented.

本発明者らは、気密封止された中空パッケージに微量の
水分が浸入する原因を究明するべく研究を重ねてきた。The present inventors have conducted repeated research to determine the cause of a trace amount of water entering a hermetically sealed hollow package.

そのなかで、中空パッケージに対する水分の浸入経路は
、当初、蓋材の接着部やリードフレームの封止部からの
ものが想定されたため、その方面からの究明を行うべく
くり返し試験を行ったところ、全く意外なことに、前記
蓋材の接着部やリードフレームの封止部からの水分の浸
入に対しては、種々の対策が取られていることから、こ
の部分からの水分の浸入はさほど問題とはならず、中空
パッケージに対する水分の浸入は、パッケージの下面、
すなわち、箱型樹脂成形体の底面から熱硬化性樹脂の成
形体の壁面を通して浸入してくるものが最も多く、表面
積の関係上、その側面からの浸入も僅かながら認められ
るという知見を得た。Initially, it was assumed that the route of moisture infiltration into the hollow package was from the adhesive part of the lid material or the sealing part of the lead frame, so repeated tests were conducted to investigate from that direction. Surprisingly, since various measures have been taken to prevent moisture from entering from the bonded portion of the lid and the sealing portion of the lead frame, moisture from entering from these areas is not a major problem. Therefore, moisture intrusion into the hollow package is limited to the bottom surface of the package,
In other words, it was found that most of the infiltration occurs from the bottom of the box-shaped resin molded body through the wall surface of the thermosetting resin molded body, and due to the surface area, a small amount of infiltration from the sides is also observed.

なお、中空パッケージに対する水分の浸入状況は下記の
方法によって試験した。The moisture intrusion into the hollow package was tested by the following method.

リードフレームをインサート成形したプラスチック中空
パッケージと、その底面に０．１ｍｍ厚のアルミニウム
板を接着したパッケージとにそれぞれガラス蓋を接着し
て中空部を封じ込めたサンプルを作成した。次いでそれ
らサンプルをプレッシャクツカーテスト（ＰＣＴ：１２
１℃、２気圧）にかけ、中空部に浸入した微量水分によ
って内部に量りが発生する迄の時間を求め、底部と、そ
れ以外のどちらからの水分の浸入が多いかを判定した。Samples were prepared in which a glass lid was adhered to a plastic hollow package into which a lead frame was insert-molded, and a 0.1 mm thick aluminum plate was adhered to the bottom of the package to seal the hollow portion. The samples were then subjected to a pressure test (PCT: 12
1°C and 2 atm), and the time required for a small amount of water that entered the hollow part to cause internal swelling was determined, and it was determined whether more water entered from the bottom or from elsewhere.

（発明の目的） そこで、本発明の目的は、パッケージの樹脂成形体を透
過して浸入する水分を効率的に防止した中空パッケージ
を提供することにある。(Object of the Invention) Therefore, an object of the present invention is to provide a hollow package that efficiently prevents moisture from penetrating through the resin molded body of the package.

（問題点を解決するための手段） 本発明は、前記目的を達成するために提案されたもので
あって、その特徴とするところは、熱硬化性樹脂から成
形された中空パッケージの外面を熱可塑性樹脂の水分透
過率の極めて低い構造物でカバーする点にある。(Means for Solving the Problems) The present invention has been proposed to achieve the above object, and is characterized by heating the outer surface of a hollow package molded from a thermosetting resin. The point is that it is covered with a structure of plastic resin that has an extremely low moisture permeability.

すなわち、本発明によれば、 半導体素子を気密封入するための中空パッケージにおい
て、熱硬化性樹脂で成形した、蓋接着部および半導体チ
ップボンディング部を有する内部構造体と、それに隣接
する外面を熱可塑性樹脂からなる外部構造体としたこと
を特徴とする半導体素子用中空パッケージが提供される
。That is, according to the present invention, in a hollow package for hermetically sealing a semiconductor element, an internal structure having a lid bonding part and a semiconductor chip bonding part molded with thermosetting resin and an outer surface adjacent thereto are made of thermoplastic resin. A hollow package for a semiconductor device is provided, characterized in that the outer structure is made of resin.

さらに本発明によれば、熱硬化性樹脂としてエポキシ樹
脂、熱可塑性樹脂としてポリフェニレンサルファイド（
ＰＰＳ）、ポリフェニレンオキサイド（ｐｐｏ）および
液晶ポリマー（芳香族ポリエステル：エコノール■、ベ
クトラ■等）から選択されたものを使用した場合に一層
耐湿性のすぐれた半導体素子用中空パッケージが提供さ
れる。Furthermore, according to the present invention, epoxy resin is used as the thermosetting resin, and polyphenylene sulfide (
When a material selected from PPS), polyphenylene oxide (ppo), and liquid crystal polymers (aromatic polyesters: Econol (2), Vectra (2), etc.) is used, a hollow package for a semiconductor device with even better moisture resistance is provided.

（発明の好適な態様の説明） 本発明の半導体素子用中空パッケージは、蓋接着部、半
導体チップボンディング部、およびリードフレームの封
入部などのすぐれた接着性が求められる部分、すなわち
、従来より熱硬化性樹脂で成形されていた中空パラゲー
ジ部分はそのまま熱硬化性樹脂を使用し、リードフレー
ムをインサートして射出成形するかトランスファー成形
することにより一体成形されるものであるが、本発明の
特徴は、そのパッケージの上部、つまり蓋材の面を除い
た外面全体を水分透過率のきわめて低い熱可塑性樹脂の
層で遮蔽することにある。(Description of Preferred Embodiments of the Invention) The hollow package for semiconductor elements of the present invention is suitable for use in areas where excellent adhesiveness is required, such as the lid bonding area, the semiconductor chip bonding area, and the lead frame encapsulation area. The hollow paragauge part, which was previously molded with a curable resin, is integrally molded using a thermosetting resin, inserting a lead frame, and performing injection molding or transfer molding.The features of the present invention are as follows. The purpose of this method is to cover the upper part of the package, that is, the entire outer surface except for the lid surface, with a layer of thermoplastic resin having an extremely low moisture permeability.

本発明の中空パッケージの構造は、パッケージ内への水
分の浸入割合が、パッケージを構成する熱硬化性樹脂の
層を透過してなされるものが多いという本発明者らによ
って得られた知見を基に導かれたものである。パッケー
ジ内層を構成する熱硬化性樹脂としては、ビスフェノー
ルＡ型、ノボラック型、グリシジルアミン型などのエポ
キシ樹脂、ポリアミノビスマレイミド、ポリピロメリッ
トイミドなどのポリイミド樹脂、フェノール樹脂、不飽
和ポリエステル樹脂、シリコーン樹脂などが例示される
が、これらの樹脂のなかではエポキシ樹脂が耐湿性、接
着性の点で最も好ましく使用される。The structure of the hollow package of the present invention is based on the knowledge obtained by the present inventors that the rate of moisture infiltration into the package is often achieved by penetrating the thermosetting resin layer that constitutes the package. It was guided by. Thermosetting resins that make up the inner layer of the package include epoxy resins such as bisphenol A type, novolac type, and glycidylamine type, polyimide resins such as polyamino bismaleimide and polypyromellitimide, phenol resins, unsaturated polyester resins, and silicone resins. Among these resins, epoxy resins are most preferably used in terms of moisture resistance and adhesive properties.

また、前記熱硬化性樹脂の側面および底面を遮蔽する目
的で使用される水分透過率のきわめて低い熱可塑性樹脂
としては、ポリフェニレンサルファイド、ポリエーテル
サルファイド、ポリブチレンテレフタレート、ポリエー
テルエーテルケトン、ポリ４−メチルペンテン−１、ポ
リカーボネート、ポリスチレン、液晶ポリマー（たとえ
ば、日本エコノール社の［エコノール■Ｊ、ポリプラス
チック社の［ベクトラ■Ｊなと）などが例示されるが、
これらの中ではポリフェニレンサルファイド（ＰＰＳ）
、ポリフェニレンオキサイド（ＰＰＯ）および液晶ポリ
マー（たとえば、エコノル■、ベクトラ■等の芳香族ポ
リエステル）が最も好ましく使用される。In addition, thermoplastic resins with extremely low moisture permeability used for shielding the side and bottom surfaces of the thermosetting resin include polyphenylene sulfide, polyether sulfide, polybutylene terephthalate, polyether ether ketone, and poly(4-4). Examples include methylpentene-1, polycarbonate, polystyrene, and liquid crystal polymers (e.g., [Econol J from Nihon Econol Co., Ltd., [Vectra J Nato] from Polyplastics Co., Ltd.), etc.
Among these, polyphenylene sulfide (PPS)
, polyphenylene oxide (PPO), and liquid crystalline polymers (e.g., aromatic polyesters such as Econol ■, Vectra ■) are most preferably used.

本発明の半導体素子用中空パッケージの断面の一例を示
す第１）Ｅにおいて、パッケージ中央部分に設けた凹陥
部２は半導体チップボンデインク部であり、この部分に
半導体チップが固着される。In 1) E showing an example of the cross section of the hollow package for a semiconductor element of the present invention, the recessed part 2 provided in the center part of the package is a semiconductor chip bonding part, and a semiconductor chip is fixed to this part.

ノードフレーム４はインサート成形によってパッケージ
中に封入一体化され、その端部をパッケージの内面およ
び外面に開放状態で伸びている。The node frame 4 is integrally enclosed in the package by insert molding, and its ends extend in an open state to the inner and outer surfaces of the package.

さらにその上面には、蓋材を接着剤で接着するための接
着部が設けられている。Furthermore, an adhesive part for bonding the lid material with an adhesive is provided on the upper surface.

かくの如（成形された熱硬化性樹脂による中空パッケー
ジは、そのままでは、成形体内を水分が比較的速く透過
して、最も成形体の薄い部分、すなわち半導体チップボ
ンデインク部に真先に浸入し、半導体チップの作動安定
性を阻害し、ひいてはパッケージ全体を作動不能に至ら
しめることになる。As described above, if a hollow package made of a thermosetting resin is left as it is, moisture will permeate through the molded body relatively quickly and will enter the thinnest part of the molded body, that is, the semiconductor chip bonding area first. This will impede the operational stability of the semiconductor chip and eventually render the entire package inoperable.

そこで、本発明の重要な技術的特徴は、この熱硬化性樹
脂からなる中空パッケージを、蓋が接着される上面を除
いた外面全体を、前記した水分透過率の極めて低い熱可
塑性合成樹脂で遮蔽することにある。Therefore, an important technical feature of the present invention is that the entire outer surface of this hollow package made of thermosetting resin, except for the top surface to which the lid is bonded, is covered with the above-mentioned thermoplastic synthetic resin with extremely low moisture permeability. It's about doing.

この蒸気不透過性の熱可塑性合成樹脂からなる遮蔽層を
設ける方法としては、リードフレームをインサート成形
した熱硬化性樹脂からなるパッケージを予め金型内にイ
ンサートし、その外面に熱可塑性樹脂を射出成形するこ
とによって第１図に示される外層が熱可塑性樹脂からな
り、内層が熱硬化性樹脂からなり、かつ、リードフレー
ムがインサート成形によって封入一体化された半導体素
子用中空パッケージかえられる。The method for providing this shielding layer made of vapor-impermeable thermoplastic synthetic resin is to insert a package made of thermosetting resin into which a lead frame is insert-molded into a mold in advance, and then inject thermoplastic resin onto the outer surface of the package. By molding, a hollow package for a semiconductor element as shown in FIG. 1 is obtained, in which the outer layer is made of thermoplastic resin, the inner layer is made of thermosetting resin, and the lead frame is encapsulated and integrated by insert molding.

インサート成形の条件は、熱硬化性樹脂の場合と熱可塑
性樹脂の場合でそれぞれ異るが、通常熱硬化性樹脂の場
合、圧力が１０ないし５００ｋｇ／ｃｍ２、温度が１５
０ないし２５０℃、時間がｌないし５分であり、後段の
熱可塑性樹脂の場合、圧力が１００ないしｌ０００ｋｇ
／ｃｍ２、温度が２００ないし３００℃、時間が１ない
し３程度度での加圧加熱が好ましい。The conditions for insert molding are different depending on whether it is a thermosetting resin or a thermoplastic resin, but usually in the case of a thermosetting resin, the pressure is 10 to 500 kg/cm2, and the temperature is 150 kg/cm2.
0 to 250°C, time is 1 to 5 minutes, and in the case of the subsequent thermoplastic resin, the pressure is 100 to 1000 kg.
/cm2, a temperature of 200 to 300°C, and a time of 1 to 3 degrees Celsius under pressure and heating.

また、熱硬化性樹脂中空パッケージの外層として形成さ
れる熱可塑性樹脂の厚みは、樹脂の種類によっても異な
るが、通＄５０ないし２００μｍのものが好適な水分透
過率が極めて低い遮蔽層としての機能を発現する。In addition, the thickness of the thermoplastic resin formed as the outer layer of the thermosetting resin hollow package varies depending on the type of resin, but it is preferably between 50 and 200 μm in thickness.It functions as a shielding layer with extremely low moisture permeability. Express.

前記他硬化性樹脂および熱可塑性樹脂には、必要に応じ
て自体公知の配合剤、たとえば安定剤、酸化防止剤、難
燃剤、着色剤、充填剤などが配合されるが、なかでも充
填剤として、シリカ、アルミナなどの無機充填剤を配合
することが好ましい。The above-mentioned other curable resins and thermoplastic resins may be blended with known compounding agents, such as stabilizers, antioxidants, flame retardants, colorants, fillers, etc. as needed. It is preferable to mix inorganic fillers such as silica, alumina, etc.

この際、熱可塑性樹脂からなる外層５は、その開放端を
熱硬化性樹脂からなる中空パッケージの上端面よりも突
出して形成することにより、蓋接着部３との間に段部が
形成され、パッケージの密封度が一層向上した半導体素
子用中空パッケージかえられることになる。At this time, the open end of the outer layer 5 made of thermoplastic resin is formed to protrude beyond the upper end surface of the hollow package made of thermosetting resin, so that a stepped portion is formed between it and the lid adhesive part 3. Hollow packages for semiconductor devices will be replaced with even better sealing.

第２図は、中空パッケージのチップボンディング部に半
導体素子（チップ）７を接着し、該素子とリードフレー
ム２をボンディングワイヤー６で連結した後、蓋材８を
熱硬化性樹脂からなる蓋材接着部３において、エポキシ
系、イミド系、およびアクリル系などの接着剤で接着せ
しめ、気密封止された半導体素子用の中空パッケージの
完成品としたものの一例を示す断面図である。In FIG. 2, a semiconductor element (chip) 7 is bonded to the chip bonding part of a hollow package, and after the element and lead frame 2 are connected with a bonding wire 6, a cover material 8 is bonded to a cover material made of thermosetting resin. FIG. 3 is a cross-sectional view showing an example of a completed hollow package for a semiconductor element that is hermetically sealed and bonded with an epoxy-based, imide-based, or acrylic-based adhesive in Section 3;

ボンディングワイヤーとしては、通常金線ないしアルミ
線が使用され、また蓋材としては、石英ガラス板、サフ
ァイア板５透明アルミナ板、透明プラスチック板などの
透明蓋材、着色ガラス板、セラミック板、金属板、着色
プラスチック板などの半透明ないし不透明蓋材が使用さ
れる。As the bonding wire, usually gold wire or aluminum wire is used, and as the cover material, transparent cover materials such as quartz glass plate, sapphire plate, transparent alumina plate, transparent plastic plate, colored glass plate, ceramic plate, metal plate are used. , translucent or opaque lidding materials such as colored plastic plates are used.

かくして、本発明によれば、蓋材およびリードフレーム
と堅固な接着が求められる部分は、それらと接着性のす
ぐれた熱硬化性樹脂で構成し、本発明者らの実験ではじ
めて究明された水分の透過し易いパッケージ底面および
側面を、蒸気不透過性の熱可塑性樹脂で遮蔽することに
より、全体として一体化された耐湿性の改良された半導
体素子用中空パッケージが得られるものである。Thus, according to the present invention, the parts that require strong adhesion to the lid material and lead frame are made of a thermosetting resin with excellent adhesive properties, and are made of a thermosetting resin that has excellent adhesive properties. By shielding the permeable bottom and side surfaces of the package with a vapor-impermeable thermoplastic resin, an integrated hollow package for semiconductor devices with improved moisture resistance can be obtained.

〔実施例） 以下、実施例および比較例によって、本発明の詳細な説
明する。[Examples] Hereinafter, the present invention will be explained in detail with reference to Examples and Comparative Examples.

実施例１ 後述する比較例と同一の方法で成形したリードフレーム
インサートエポキシ樹脂製中空パッケジを金型内にセッ
トし、図１に示す様にその外側をポリフェニレンサルフ
ァイド（ポリプラスチック社製Ｌ１４０Ａ１）で包む様
にインサート成形し二重構造の中空パッケージ体を得た
。なおこのときの成形温度は３５０℃、射出圧力は８０
０　ｋｇ／ｃｍ２、金型温度は１６０℃であり、ＰＰＳ
の厚みはＩ＋ｎｍであった。Example 1 A lead frame insert epoxy resin hollow package molded by the same method as the comparative example described later is set in a mold, and the outside is wrapped with polyphenylene sulfide (L140A1 manufactured by Polyplastics Co., Ltd.) as shown in Figure 1. A hollow package with a double structure was obtained by insert molding. The molding temperature at this time was 350°C, and the injection pressure was 80°C.
0 kg/cm2, mold temperature is 160℃, PPS
The thickness was I+nm.

さらにガラス板を比較例と同一の方法で接着シルした。Furthermore, the glass plate was adhesive-sealed in the same manner as in the comparative example.

実施例２ 比較例と同一の方法で成形したリードフレームインサー
トエポキシ樹脂製中空パッケージを金型内にセットし、
図１に示す様にその外側を芳香族ポリエステル液晶ポリ
マー（ポリプラスチック社製ベクトラＡ１３０）で包む
様にインサート成形し二重構造の中空パッケージ体を得
た。なおこの時の成形温度は２９０℃、射出圧力は４０
０　ｋｇ／ｃＩｆ１２、金型温度は１２０℃であり、ベ
クトラＡ１３０の厚みは０．５■■であった。Example 2 A lead frame insert epoxy resin hollow package molded in the same manner as the comparative example was set in a mold,
As shown in FIG. 1, insert molding was performed so that the outside of the package was covered with an aromatic polyester liquid crystal polymer (Vectra A130 manufactured by Polyplastics Co., Ltd.) to obtain a hollow package with a double structure. The molding temperature at this time was 290°C, and the injection pressure was 40°C.
0 kg/cIf12, the mold temperature was 120°C, and the thickness of Vectra A130 was 0.5■■.

さらにガラス板を比較例と同一の方法で接着シールした
。Furthermore, the glass plate was adhesively sealed in the same manner as in the comparative example.

比較例 ４２アロイ製リードフレームを下記エポキシ樹脂成形材
料Ａでインサート成形（１６０℃×３分トランスファー
成形）した後、１８０℃×４時間のポストキュアーを行
ない、中空プラスチックパッケージ体を得た（底面厚み
０．８ｍｍ１゜引続きコーニング社製＃７０５９ガラス
板（０，７−−厚）の周辺部に下記エポキシ接着剤Ｂを
塗布し、パッケージ体に熱圧着（１３０℃×２時間、３
．５ｋｇ／ｃｍ”圧）して中空部をシールしたパッケー
ジを得た。Comparative Example 42 After insert molding (transfer molding at 160°C for 3 minutes) an alloy lead frame with the following epoxy resin molding material A, post-curing was performed at 180°C for 4 hours to obtain a hollow plastic package (bottom thickness: 0.8 mm 1° Continuously apply the following epoxy adhesive B to the periphery of a Corning #7059 glass plate (0.7--thickness), and heat-press it to the package body (130°C x 2 hours, 3 hours).
．． 5 kg/cm'' pressure) to obtain a package whose hollow part was sealed.

得られたシール済みパッケージをプレッシャークツカー
テスト（ＰＣＴ：１２１℃、２気圧）に所定時間かけ、
取出し後１２０℃ホットプレートにガラス面を下にして
１５秒放置し、ただちに２５℃の放熱ブロックにガラス
面を１０秒押し付は内部に結露（浸入した水分による）
が発生しているか否かを目視で判定した。この結露が生
じる迄のＰＣＴ時間を測定した。The obtained sealed package was subjected to a pressure tester test (PCT: 121°C, 2 atm) for a specified period of time.
After taking it out, leave it on a 120°C hot plate with the glass side facing down for 15 seconds, then immediately press the glass side against a 25°C heat dissipation block for 10 seconds. Condensation may occur inside (due to moisture that has entered).
It was visually determined whether or not this was occurring. The PCT time until this dew condensation occurred was measured.

エポキシ成形　料Ａ　（部は重量部） 日本化薬■製 ０−クレゾールノボラックエポキシ ＥＯＣＮ−１０３Ｓ　　　　　　　１００部日本化薬■
製 フェノールノボラック樹脂 ＰＨ１０４５部 日本化薬■製 Ｂｒ化ノボラックエポキシＢＲＥＮ　　　　２６．４部
能森■製 溶融シリカ　ヒユーズレックス ＲＤ−８ 和光試薬　ステアリン酸 和光試薬　５ｂ２０３ 信越化学■製 シランカップリング剤 ＫＢＭ−４０３ 四国化成■製 ５１６部 ３部 ４．６部 ３部 イミダゾール　２　Ｅ４　ＵＺ １部 旭カーボン■製 カーボンブラック １部 酸無水物系硬化剤　Ｍ　Ｈ−７００ 和光試薬 Ｎ、Ｎ−ペンシルジメチルアミン 龍森■製 ヒユーズレックスＸ ８５部 ０．２部 ２００部 上記配合物を１００℃でロール混練し、冷却粉砕した。Epoxy molding material A (parts by weight) 0-cresol novolac epoxy EOCN-103S manufactured by Nippon Kayaku ■ 100 parts Nippon Kayaku ■
Phenol novolac resin PH1045 parts Nippon Kayaku Novolac epoxy BREN 26.4 parts Fused silica manufactured by Nomori Fuzurex RD-8 Wako reagent Stearic acid Wako reagent 5b203 Silane coupling agent KBM-403 manufactured by Shin-Etsu Chemical Shikoku 516 parts manufactured by Kasei ■ 3 parts 4.6 parts 3 parts Imidazole 2 E4 UZ 1 part Carbon black manufactured by Asahi Carbon ■ 1 part Acid anhydride curing agent M H-700 Wako reagent N, N-pencyl dimethylamine manufactured by Ryumori ■ Fuzurex

と股１之呈１月上（部は重量部） 三井石油化学■製 ビスフェノールＡ型エポキシ樹脂 Ｒ−１４０１００部 新日本理化■製and crotch 1.1 month (parts are weight parts) Made by Mitsui Petrochemical Bisphenol A type epoxy resin R-140 100 copies Made by New Japan Chemical

【図面の簡単な説明】[Brief explanation of drawings]

第１図、第２図は本発明の半導体素子用中空パッケージ
の一例を示す断面図であり、第１図は中間段階、第２図
は完成時の状態を示す。 図中、■・・・熱硬化性樹脂 ２−・・半導体チップボンディング部 ３・・・蓋材接着部 ４・−・リードフレーム ５・・・熱可塑性樹脂 ６・・・ボンディングワイヤー ７・・・半導体素子 ８・・・蓋材 ９・・・接着層 第１図1 and 2 are cross-sectional views showing an example of a hollow package for a semiconductor element according to the present invention, with FIG. 1 showing an intermediate stage and FIG. 2 showing a completed state. In the figure, ■...Thermosetting resin 2-...Semiconductor chip bonding part 3...Lid material adhesion part 4--Lead frame 5...Thermoplastic resin 6...Bonding wire 7... Semiconductor element 8...Lid material 9...Adhesive layer Fig. 1

Claims (3)

【特許請求の範囲】[Claims] （１）半導体素子を気密封入するための中空パッケージ
において、熱硬化性樹脂で成形した、蓋接着部および半
導体チップボンディング部を有する内部構造体と、それ
に隣接する外面を熱可塑性樹脂からなる外部構造体とし
たことを特徴とする半導体素子用中空パッケージ。(1) In a hollow package for hermetically sealing a semiconductor element, an internal structure is formed of thermosetting resin and has a lid adhesion part and a semiconductor chip bonding part, and an external structure whose adjacent outer surface is made of thermoplastic resin. A hollow package for semiconductor elements characterized by a hollow body. （２）熱硬化性樹脂がエポキシ樹脂である請求項（１）
記載の半導体素子用中空パッケージ。(2) Claim (1) wherein the thermosetting resin is an epoxy resin.
The hollow package for semiconductor elements described above. （３）熱可塑性樹脂がポリフェニレンサルファイド、ポ
リフェニレンオキサイド、液晶ポリマーから選ばれたも
のである請求項（１）記載の半導体素子用中空パッケー
ジ。(3) The hollow package for a semiconductor device according to claim (1), wherein the thermoplastic resin is selected from polyphenylene sulfide, polyphenylene oxide, and liquid crystal polymer.
JP2200002A 1990-07-28 1990-07-28 Hollow package for semiconductor devices with improved moisture resistance Expired - Lifetime JP2837747B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2200002A JP2837747B2 (en) 1990-07-28 1990-07-28 Hollow package for semiconductor devices with improved moisture resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2200002A JP2837747B2 (en) 1990-07-28 1990-07-28 Hollow package for semiconductor devices with improved moisture resistance

Publications (2)

Publication Number Publication Date
JPH0485951A true JPH0485951A (en) 1992-03-18
JP2837747B2 JP2837747B2 (en) 1998-12-16

Family

ID=16417165

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2837747B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11207746B2 (en) 2005-07-28 2021-12-28 Copperhead Industrial Inc. Spot welding cap changer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11207746B2 (en) 2005-07-28 2021-12-28 Copperhead Industrial Inc. Spot welding cap changer

Also Published As

Publication number Publication date
JP2837747B2 (en) 1998-12-16

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