JPH09246307A - Autofocus ic and its manufacture - Google Patents

Autofocus ic and its manufacture

Info

Publication number
JPH09246307A
JPH09246307A JP8051284A JP5128496A JPH09246307A JP H09246307 A JPH09246307 A JP H09246307A JP 8051284 A JP8051284 A JP 8051284A JP 5128496 A JP5128496 A JP 5128496A JP H09246307 A JPH09246307 A JP H09246307A
Authority
JP
Japan
Prior art keywords
autofocus
film
protective film
chip
para
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8051284A
Other languages
Japanese (ja)
Inventor
Shinichi Omokawa
真一 面川
Katsuhiko Yanagawa
克彦 柳川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP8051284A priority Critical patent/JPH09246307A/en
Publication of JPH09246307A publication Critical patent/JPH09246307A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Automatic Focus Adjustment (AREA)
  • Wire Bonding (AREA)
  • Focusing (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for forming a high reliability light receiving window for an autofocus IC, which receives the image of a subject by a photo sensor array arranged on a straight line and calculates a distance to the subject, at a low cost. SOLUTION: A transparent organic protection film is formed on the photosensor array 1 of a chip 3. For example, diparaxylene (Monochloroxylene or dichloroparaxylene or monomethylparaxylene may be used.) is sublimated and heat-decomposed, and a polyparaxylene film 8 is formed by vacuum deposition polymerization. Or UV-curing and thermosetting liquid silicone resin is applied, cured and a silicone film is formed. When the silicone resin is used, protection coat may be applied only on the bonding pad part.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、カメラ等のオート
フォーカス用センサを有するオートフォーカスＩＣ、特
にその保護膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an autofocus IC having an autofocus sensor for a camera or the like, and more particularly to a protective film therefor.

【０００２】[0002]

【従来の技術】オートフォーカスカメラには、レンズを
通して被写体の像を直線状に形成されたイメージセンサ
上に結像させ、その映像信号を処理して被写体までの距
離を測定するパッシブ方式のオートフォーカスＩＣが組
み込まれているものがある。他に、超音波等を発して距
離を計るアクティブ方式のものがあるが本発明とは関わ
りをもたないのでその詳細には触れないことにする。2. Description of the Related Art An autofocus camera is a passive type autofocus that forms an image of a subject on a linearly formed image sensor through a lens and processes the video signal to measure the distance to the subject. Some have integrated ICs. Besides, there is an active type that emits ultrasonic waves or the like to measure the distance, but since it has no relation to the present invention, its details will not be described.

【０００３】図５は、パッシブ方式のオートフォーカス
ＩＣの斜視図であり、オートフォーカスＩＣのチップ３
の表面にオートフォーカス用センサとして、一直線上に
並ぶ一対のフォトセンサアレイ１と、ボンディングパッ
ド２が見られる。図６、図７は、従来のオートフォーカ
スＩＣのパッケージ後の断面図である。チップ３の表面
部分に形成されたフォトセンサアレイ１はレンズを通し
た被写体の像を受けるものであるから、当然その上方は
透明でなくてはならない。FIG. 5 is a perspective view of a passive type autofocus IC, which is a chip 3 of the autofocus IC.
As a sensor for autofocus, a pair of photosensor arrays 1 and a bonding pad 2 aligned on a straight line can be seen on the surface of the. 6 and 7 are cross-sectional views of a conventional autofocus IC after packaging. Since the photosensor array 1 formed on the surface of the chip 3 receives the image of the subject through the lens, the upper part of the photosensor array must be transparent.

【０００４】図６の従来例では、チップ３が例えばエポ
キシ樹脂のクリアモールド５でパッケージされており、
上方中央に受光窓部１１ａが形成されている。図７の従
来例では、オートフォーカスＩＣのチップ３をプラスチ
ックパッケージ６に収容し、パッケージ６の上方にはガ
ラスの受光窓部１１ｂを設けたものである。なお、１２
はクリアモールド５、パッケージ６から引き出した外部
リードであり、ボンディングワイヤ４でチップ３上のボ
ンディングパッド２に接続されている。In the conventional example of FIG. 6, the chip 3 is packaged by a clear mold 5 made of epoxy resin, for example.
A light receiving window portion 11a is formed in the upper center. In the conventional example of FIG. 7, the chip 3 of the autofocus IC is housed in a plastic package 6, and a glass light receiving window portion 11b is provided above the package 6. Note that 12
Is an external lead drawn from the clear mold 5 and the package 6, and is connected to the bonding pad 2 on the chip 3 by the bonding wire 4.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、前記の
クリアモールド、またはパッケージ収容の構成では、下
記のような問題点を有している。図６のようにオートフ
ォーカスＩＣをクリアモールドする場合、光の透過性を
損なわないよう、モールド材料として透明材料を用いな
ければならないが、一般に透明材料は高価である。ま
た、モールド時には、埃等の混入を防ぐための防塵対策
を行う必要がある。これを完全に行おうとすると製造コ
ストが上昇し、逆に手を抜けば信頼性上問題を起こしや
すい。更にモールド後には、受光窓部１１ａ形成のため
のラッピング工程があり、これに掛かる費用がオートフ
ォーカスＩＣ作成費用の無視出来ない部分を占める。However, the above-described clear mold or package accommodating structure has the following problems. When an autofocus IC is clear-molded as shown in FIG. 6, a transparent material must be used as a molding material so as not to impair light transmission, but the transparent material is generally expensive. In addition, it is necessary to take dustproof measures to prevent dust and the like from entering during molding. If you try to do this completely, the manufacturing cost will increase, and conversely, if you do not do it, problems will occur in reliability. Further, after the molding, there is a lapping process for forming the light receiving window portion 11a, and the cost required for the lapping process occupies a non-negligible part of the autofocus IC manufacturing cost.

【０００６】一方、図７のようにオートフォーカスＩＣ
をプラスチックまたはセラミック等のパッケージに収容
する場合、受光窓部１１ｂには一般にガラスを用いる
が、ガラスは耐衝撃性が低い上に、高価な材料である。
また、パッケージ作製時には、上記と同様、埃等の混入
を防ぐための防塵対策を行う必要がある。On the other hand, as shown in FIG. 7, an autofocus IC
In the case of housing in a package such as plastic or ceramic, glass is generally used for the light receiving window portion 11b. However, glass is low in impact resistance and is an expensive material.
In addition, at the time of manufacturing the package, it is necessary to take dust-proof measures to prevent mixing of dust and the like, as in the above.

【０００７】更に、この方法では、チップ３は剥き出し
の状態でパッケージ内に収容されているため、パッケー
ジは気密封止の必要がある。気密封止を行わない場合、
高湿度環境下では、ボンディングパッドの腐食や、セン
サ表面への水分の結露による汚染、ボンディングパッド
間の短絡といった問題が発生する。Further, according to this method, since the chip 3 is housed in the package in a state of being exposed, the package needs to be hermetically sealed. If not hermetically sealed,
In a high-humidity environment, problems such as corrosion of bonding pads, contamination of water on the sensor surface due to dew condensation, and short circuits between bonding pads occur.

【０００８】本発明は、上述の問題に鑑みてなされたも
のであり、その目的は、その機能を損なわずに、低コス
ト化、工程の簡略化、高信頼性化を達成したオートフォ
ーカスＩＣを提供することにある。The present invention has been made in view of the above problems, and an object thereof is to provide an autofocus IC which achieves cost reduction, process simplification, and high reliability without impairing its function. To provide.

【０００９】[0009]

【課題を解決するための手段】上記課題を解決するた
め、本発明のオートフォーカスＩＣは、表面に有機膜の
保護膜を有するものとする。そのようにすれば、有機の
保護膜のもつ、ガスバリア性、絶縁性、基板との密着性
等の効果により、オートフォーカスセンサの機能を損な
わない保護膜ができる。In order to solve the above problems, the autofocus IC of the present invention has a protective film of an organic film on the surface. By doing so, it is possible to form a protective film that does not impair the function of the autofocus sensor due to the effects of the gas barrier property, the insulating property, the adhesiveness with the substrate, and the like that the organic protective film has.

【００１０】特に、保護膜が、ポリ−パラ−キシリレン
であるものとする。更に、ポリ−モノクロロ−パラ−キ
シリレン、ポリ−ジクロロ−パラ−キシリレン、ポリ−
モノメチル−パラ−キシリレンのいずれかのポリ−パラ
−キシリレンであることが重要である これらの膜は、ガスバリア性、絶縁性が高く、また基板
との密着性が優れている。In particular, the protective film is poly-para-xylylene. Furthermore, poly-monochloro-para-xylylene, poly-dichloro-para-xylylene, poly-
It is important that any one of monomethyl-para-xylylene is poly-para-xylylene. These films have high gas barrier properties, high insulation properties, and excellent adhesion to the substrate.

【００１１】そして、ポリ−パラ−キシリレンの保護膜
を形成する方法としては、基板に実装したオートフォー
カスＩＣの表面に、蒸着重合法により上記の膜を形成す
るものとする。蒸着重合法によれば、簡易に均質で均一
な保護膜が形成できる。また、保護膜が、シリコーン樹
脂であっても良い。As a method of forming a protective film of poly-para-xylylene, the above film is formed on the surface of an autofocus IC mounted on a substrate by vapor deposition polymerization. According to the vapor deposition polymerization method, a homogeneous and uniform protective film can be easily formed. Further, the protective film may be a silicone resin.

【００１２】シリコーン樹脂膜も、ガスバリア性、絶縁
性が高く、また基板との密着性が優れている。特に、ワ
イヤボンディング部分のみに保護膜が形成されているも
のとする。そして、シリコーン樹脂の保護膜を形成する
方法としては、液状のコーティング剤を塗布し、重合硬
化させて保護膜を形成するものとする。The silicone resin film also has high gas barrier properties and insulating properties, and also has excellent adhesion to the substrate. Particularly, it is assumed that the protective film is formed only on the wire bonding portion. And as a method of forming a protective film of a silicone resin, a liquid coating agent is applied and polymerized and cured to form a protective film.

【００１３】塗布法によっても、簡易に均質で均一な保
護膜が形成できる。A uniform and uniform protective film can be easily formed also by the coating method.

【００１４】[0014]

【発明の実施の形態】以下に図面を参照しながら本発明
の実施例について説明する。 〔実施例１〕図１は、第一の実施例（実施例１）のオー
トフォーカスＩＣの断面図である。図において、一直線
上に並ぶ一対のフォトセンサアレイ１とボンディングパ
ッド２を設けたオートフォーカスＩＣのチップ３が、セ
ラミック印刷基板７に実装されている。チップ３の保護
膜として、モノクロロパラキシリレン（例えば、商品名
パリレンＣ〔ユニオンカーバイド社製〕）の真空蒸着重
合法により、オートフォーカスＩＣチップ３の表面全面
に膜厚２μｍのポリ−モノクロロ−パラ−キシリレン膜
８を形成した。なお、１０は外部との接続のためのスル
ーホール金属と接続された印刷配線であり、ボンディン
グワイヤ４でチップ上のボンディングパッド２と接続さ
れている。この第一の実施例では、セラミック基板７へ
のチップ３のダイボンディング後に、ポリ−モノクロロ
−パラ−キシリレン膜８の形成をおこなったので、ポリ
−モノクロロ−パラ−キシリレン膜８は、チップ３の表
面および、セラミック基板７の表面に密着し、セラミッ
ク基板７のボンディング部分の保護膜ともなっている。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. [Embodiment 1] FIG. 1 is a sectional view of an autofocus IC according to a first embodiment (embodiment 1). In the figure, a chip 3 of an autofocus IC provided with a pair of photosensor arrays 1 and bonding pads 2 arranged in a straight line is mounted on a ceramic printed board 7. As a protective film for the chip 3, a poly-monochloropara-para. -The xylylene film 8 was formed. A printed wiring 10 is connected to a through-hole metal for connecting to the outside, and is connected to a bonding pad 2 on the chip by a bonding wire 4. In the first embodiment, since the poly-monochloro-para-xylylene film 8 is formed after the die bonding of the chip 3 to the ceramic substrate 7, the poly-monochloro-para-xylylene film 8 is formed on the chip 3. It is in close contact with the surface and the surface of the ceramic substrate 7, and also serves as a protective film for the bonding portion of the ceramic substrate 7.

【００１５】図４にコーティング装置の概略図およびフ
ローチャートを示す。ポリモノクロロパラキシリレンの
真空蒸着重合法は、まず原料のジパラキシリレンを気化
室１３に投入し、約１Ｐａに減圧して脱気後、１５０℃
の温度で気化させ、６９０℃の熱分解炉１４内を通過さ
せて、ラジカル単量体（ジラジカルパラキシリレン）を
生成する。これを常温の蒸着室１５内に設置したオート
フォーカスＩＣのチップ３の表面に接触させ、重合体
（ポリパラキシリレン）の皮膜を得る。２μｍの厚さの
ポリパラキシリレン膜を得るには、約２時間要した。蒸
着実施例の真空度は約３．５Ｐａであった。上記第一の
実施例のように、セラミック基板７へのチップ３のダイ
ボンディング後に、ポリ−モノクロロ−パラ−キシリレ
ン膜８を形成することもできる。FIG. 4 shows a schematic diagram and a flow chart of the coating apparatus. The vacuum vapor deposition polymerization method of polymonochloroparaxylylene is as follows. First, the raw material diparaxylylene is charged into the vaporization chamber 13, depressurized to about 1 Pa and degassed, and then 150 ° C.
And vaporized at a temperature of 690 ° C. and passed through the pyrolysis furnace 14 at 690 ° C. to generate a radical monomer (diradical paraxylylene). This is brought into contact with the surface of the chip 3 of the autofocus IC installed in the vapor deposition chamber 15 at room temperature to obtain a polymer (polyparaxylylene) film. It took about 2 hours to obtain a polyparaxylylene film having a thickness of 2 μm. The degree of vacuum in the vapor deposition example was about 3.5 Pa. As in the first embodiment, the poly-monochloro-para-xylylene film 8 can be formed after the die bonding of the chip 3 to the ceramic substrate 7.

【００１６】真空蒸着重合法は、蒸着槽内が真空となる
ため、保護膜形成時の埃等による汚染を最小限に抑制可
能な上に、工程が簡易であるという利点を持つ。また、
本方法にて、保護膜を施したオートフォーカスＩＣは、
センサとしての特性上も、従来品と同等の性能を示し、
カメラ用としての要求仕様条件を十分に満足した。The vacuum vapor deposition polymerization method has the advantage that, since the inside of the vapor deposition tank is evacuated, contamination by dust or the like during formation of the protective film can be suppressed to a minimum and the process is simple. Also,
With this method, the autofocus IC with the protective film is
In terms of characteristics as a sensor, it shows the same performance as conventional products,
Satisfied the required specifications for the camera.

【００１７】更に、長期信頼性試験である高温高湿バイ
アス試験（８５℃、８３％、１０００時間）、温度サイ
クル試験（−４０℃：１時間〜１２５℃：１時間、１０
０サイクル）、高・低温放置試験（高温１２５℃、低温
−４０℃）、衝撃試験等の信頼性試験（以下信頼性試験
と略する）においても、ボンディングパッドの腐食や、
センサ表面への水分の結露による汚染、ボンディングパ
ッド間の短絡といった問題は起こらず、十分な耐久性を
有することが示された。Furthermore, a high temperature and high humidity bias test (85 ° C., 83%, 1000 hours) which is a long-term reliability test, a temperature cycle test (-40 ° C .: 1 hour to 125 ° C .: 1 hour, 10
0 cycles), high and low temperature storage tests (high temperature 125 ° C, low temperature -40 ° C), reliability tests such as impact tests (hereinafter abbreviated as reliability tests), corrosion of the bonding pad,
It was shown that the sensor surface has sufficient durability without causing problems such as contamination due to water condensation on the sensor surface and short circuit between bonding pads.

【００１８】実施例１ではポリモノクロロパラキシリレ
ンの膜を形成したので、特にガスバリア性の良い膜がで
きた。同様の蒸着重合法によって、ポリジクロロパラキ
シリレン、ポリモノメチルパラキシリレンの膜を形成し
たオートフォーカスＩＣも、カメラ用としての要求仕様
条件を十分に満足した。特にポリジクロロパラキシリレ
ンの膜は有機溶剤、酸、アルカリ等に対する耐薬品性が
優れており、またポリモノメチルパラキシリレンの膜
は、より低温で形成できるので、形成が容易であった。In Example 1, since a polymonochloroparaxylylene film was formed, a film having a particularly good gas barrier property was formed. An autofocus IC having a film of polydichloroparaxylylene or polymonomethylparaxylylene formed by the same vapor deposition polymerization method sufficiently satisfied the required specification conditions for a camera. In particular, the polydichloroparaxylylene film has excellent chemical resistance to organic solvents, acids, alkalis, etc., and the polymonomethylparaxylylene film can be formed at a lower temperature, so that it was easy to form.

【００１９】尚、基板材質、形状等はセラミックや印刷
基板に限定されるものではない。 〔実施例２〕図２は第二の実施例のオートフォーカスＩ
Ｃの断面図である。一直線上に並ぶ一対のフォトセンサ
アレイ１とボンディングパッド２を設けたＩＣチップ３
が、セラミック印刷基板７に実装され、チップ３の表面
が保護膜として、膜厚１００μｍ（硬化後）の透明なシ
リコーン膜９で覆われている。The material and shape of the substrate are not limited to ceramics and printed substrates. [Embodiment 2] FIG. 2 shows the autofocus I of the second embodiment.
It is sectional drawing of C. IC chip 3 provided with a pair of photosensor array 1 and bonding pad 2 aligned in a straight line
However, it is mounted on the ceramic printed board 7 and the surface of the chip 3 is covered with a transparent silicone film 9 having a film thickness of 100 μm (after curing) as a protective film.

【００２０】透明なシリコーン膜９の形成方法は、オー
トフォーカスＩＣ上にシリコーン膜９は、透明液状のシ
リコーン系コーティング剤（例えば、商品名ＴＵＶ６０
００〔東芝シリコーン社製〕）を用い、ディスペンサに
より、ＩＣチップ３の表面全面に塗布し、紫外線照射
（１０００−ｍＪ／ｃｍ2 ）にて硬化するといった簡易
な方法により、作製される。The method for forming the transparent silicone film 9 is as follows. The silicone film 9 is formed on the autofocus IC by a transparent liquid silicone coating agent (for example, trade name TUV60).
00 (manufactured by Toshiba Silicone Co., Ltd.) and applied on the entire surface of the IC chip 3 with a dispenser and cured by irradiation with ultraviolet rays (1000-mJ / cm 2 ).

【００２１】この場合厚さが１００μｍと薄い膜なの
で、表面を平坦化するような工程は不要である。また高
温耐湿性に優れた膜なので、改めて気密容器に封止する
必要がない。本方法にて保護膜を形成したオートフォー
カスＩＣは、実施例１のものと同様、センサとしての特
性上も従来技術と同等の性能を示し、カメラ用としての
要求仕様条件を十分に満たし、信頼性試験においても十
分な耐久性を有することが示された。In this case, since the film is as thin as 100 μm, the step of flattening the surface is unnecessary. Further, since the film has excellent high temperature and humidity resistance, it is not necessary to seal it in an airtight container again. The autofocus IC having the protective film formed by this method exhibits the same performance as the conventional technology in terms of the characteristics as a sensor as in the case of the first embodiment, sufficiently satisfies the required specification conditions for a camera, and is reliable. It was also shown in a sex test that it has sufficient durability.

【００２２】他に熱硬化型の透明液状のシリコーン系コ
ーティングを用いることもできる。例えば、ＴＳＪ３１
５９〔東芝シリコーン社製〕を、同様にディスペンサに
より、ＩＣチップ３の表面全面に塗布し、加熱炉（１５
０℃、１時間）にて硬化するといった簡易な方法によっ
て、オートフォーカスＩＣ上にシリコーン膜９を形成で
きる。Alternatively, a thermosetting transparent liquid silicone coating may be used. For example, TSJ31
Similarly, 59 [manufactured by Toshiba Silicone Co., Ltd.] is coated on the entire surface of the IC chip 3 with a dispenser, and a heating furnace (15
The silicone film 9 can be formed on the autofocus IC by a simple method such as curing at 0 ° C. for 1 hour.

【００２３】この熱硬化型シリコーン膜を形成したオー
トフォーカスＩＣは、上記の紫外線硬化型のシリコーン
膜を形成したオートフォーカスＩＣとほぼ同じ特性を示
した。 〔実施例３〕図３は第三の実施例のオートフォーカスＩ
Ｃの断面図である。The autofocus IC formed with this thermosetting silicone film showed almost the same characteristics as the above-mentioned autofocus IC formed with the ultraviolet curing silicone film. [Third Embodiment] FIG. 3 shows the autofocus I of the third embodiment.
It is sectional drawing of C.

【００２４】一直線上に並ぶ一対のフォトセンサアレイ
１とボンディングパッド２を設けたＩＣチップ３が、セ
ラミック印刷基板７に実装され、チップ３のボンディン
グ部の保護膜として、保護コーティング１９が被着され
ている。特にこの場合、保護コーティング１９は、ＩＣ
チップ３上のボンディングパッド２付近のみに限定され
ている。An IC chip 3 provided with a pair of photosensor array 1 and a bonding pad 2 aligned in a straight line is mounted on a ceramic printed board 7, and a protective coating 19 is applied as a protective film for a bonding portion of the chip 3. ing. Particularly in this case, the protective coating 19 is
It is limited only to the vicinity of the bonding pad 2 on the chip 3.

【００２５】保護コーティング１９の被着方法は、液状
のコーティング剤として、低粘度・高チキソ性の条件を
有する材料（例えばシリコーン系コーティング剤、商品
名ＴＵＶ６２００を用い、ディスペンサにでＩＣチップ
３のボンディングパッド２近傍のみに塗布し、紫外線照
射（１０００ｍＪ／ｃｍ2 ）にて硬化する。硬化後、保
護コーティング１９がボンディングパッド２およびボン
ディングワイヤ４のネック部分を完全に覆っていること
を確認した。The protective coating 19 is applied by using, as a liquid coating agent, a material having low viscosity and high thixotropic properties (for example, a silicone coating agent, trade name TUV6200), and bonding the IC chip 3 with a dispenser. It is applied only in the vicinity of the pad 2 and is cured by ultraviolet irradiation (1000 mJ / cm 2 ) After the curing, it is confirmed that the protective coating 19 completely covers the bonding pad 2 and the neck portion of the bonding wire 4.

【００２６】本方法は、塗布位置の精度および塗布量に
注意を要するが、従来技術と比較して、簡易な方法でオ
ートフォーカスＩＣの作製が可能である。この場合、ボ
ンディングパッド２近傍のみに保護コーティング１９が
形成され、ＩＣチップ３のフォトセンサアレイ１上は保
護されないが、通常ＩＣチップ３の表面は窒化膜等の保
護膜が形成されているので問題ない。This method requires attention to the accuracy of the coating position and the coating amount, but the autofocus IC can be manufactured by a simple method as compared with the prior art. In this case, the protective coating 19 is formed only in the vicinity of the bonding pad 2, and the photosensor array 1 of the IC chip 3 is not protected. However, since a protective film such as a nitride film is usually formed on the surface of the IC chip 3, there is a problem. Absent.

【００２７】本方法にて保護コーティングを施したオー
トフォーカスＩＣは、実施例１のものと同様、センサと
しての特性上も従来技術と同等の性能を示し、カメラ用
としての要求仕様条件を十分に満たし、信頼性試験にお
いても十分な耐久性を有することが示された。他に熱硬
化型の液状のシリコーン系コーティング剤を用いること
もできる。例えば、ＴＳＪ３１５６〔東芝シリコーン社
製〕を、同様にディスペンサにて、ＩＣチップ３のボン
ディングパッド２付近のみに塗布し、加熱炉（１５０
℃、１時間）にて硬化するといった簡易な方法によっ
て、オートフォーカスＩＣのボンディングパッド２付近
のみに保護コーティング１９が作製される。この熱硬化
型保護コーティングを形成したオートフォーカスＩＣ
は、上記の紫外線硬化型の保護コーティングを形成した
オートフォーカスＩＣとほぼ同じ特性を示した。Like the first embodiment, the autofocus IC coated with the protective coating by this method exhibits the same performance as that of the prior art in the characteristics as a sensor, and the required specifications for a camera are sufficiently satisfied. Satisfaction was satisfied and it was shown to have sufficient durability even in the reliability test. Alternatively, a thermosetting liquid silicone coating agent may be used. For example, TSJ3156 (manufactured by Toshiba Silicone Co., Ltd.) is similarly applied to only the vicinity of the bonding pad 2 of the IC chip 3 with a dispenser, and a heating furnace (150
The protective coating 19 is formed only in the vicinity of the bonding pad 2 of the autofocus IC by a simple method such as curing at 1 ° C. for 1 hour. Autofocus IC with this thermosetting protective coating
Shows almost the same characteristics as the above-mentioned autofocus IC formed with the UV-curable protective coating.

【００２８】更にまた、エポキシ系コーテイング剤（商
品名ＣＶ５７６ＨＮ〔松下電工（株）製〕）を用い、加
熱炉（１４５℃、３時間）にて硬化するといった簡易な
方法によっても、十分な性能の保護コーティング１９が
作製された。Furthermore, a sufficient performance can be obtained even by a simple method of using an epoxy-based coating agent (trade name CV576HN [manufactured by Matsushita Electric Works Ltd.]) and curing it in a heating furnace (145 ° C., 3 hours). A protective coating 19 was created.

【００２９】[0029]

【発明の効果】以上説明したように本発明によれば、ジ
パラキシリレンの真空蒸着重合法あるいは、シリコーン
樹脂の塗布法といった、従来技術と比較して、材料費も
安く、非常に簡易な方法で有機保護膜を形成することに
より、有機保護膜の持つガスバリア性、絶縁性、基板と
の密着性といった諸特性の効果により、カメラ用として
の要求仕様条件を十分に満たし、信頼性試験においても
十分な耐久性を有するオートフォーカスＩＣを、少ない
工程によって作製することが可能となり、低価格の製品
を提供できるようになる。As described above, according to the present invention, the material cost is low and the organic method is very simple as compared with the prior art such as the vacuum deposition polymerization method of diparaxylylene or the coating method of silicone resin. By forming a protective film, the characteristics of the organic protective film, such as gas barrier properties, insulation properties, and adhesion to the substrate, can be fully satisfied, and the required specifications for cameras can be sufficiently satisfied and reliability tests can also be performed. A durable autofocus IC can be manufactured by a small number of steps, and a low-priced product can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明第一の実施例のオートフォーカスＩＣの
斜視図FIG. 1 is a perspective view of an autofocus IC according to a first embodiment of the present invention.

【図２】本発明第二の実施例のオートフォーカスＩＣの
断面図FIG. 2 is a sectional view of an autofocus IC according to a second embodiment of the present invention.

【図３】本発明第三の実施例のオートフォーカスＩＣの
断面図FIG. 3 is a sectional view of an autofocus IC according to a third embodiment of the present invention.

【図４】本発明第一の実施例のオートフォーカスＩＣの
保護膜のコーティング装置の概略図およびフローチャー
トFIG. 4 is a schematic view and a flowchart of a coating device for a protective film of an autofocus IC according to the first embodiment of the present invention.

【図５】従来のオートフォーカスＩＣの斜視図FIG. 5 is a perspective view of a conventional autofocus IC.

【図６】従来のクリアモールド型オートフォーカスＩＣ
の断面図FIG. 6 Conventional clear mold type autofocus IC
Cross section of

【図７】従来のパッケージ型オートフォーカスＩＣの断
面図FIG. 7 is a sectional view of a conventional package type autofocus IC.

【符号の説明】[Explanation of symbols]

１ フォトセンサアレイ ２ ボンディングパッド ３ チップ ４ ボンディングワイヤ ５ クリアモールド ６ パッケージ ７ セラミック基板 ８ ポリパラキシリレン膜 ９ 液状コーティング膜 １０ 印刷配線 １１ａ 受光窓（ラッピング処理によるもの） １１ｂ 受光窓（ガラス） １２ リードフレーム １３ 気化室 １４ 熱分解室 １５ 蒸着室 １９ 保護コーティング 1 Photosensor array 2 Bonding pad 3 Chip 4 Bonding wire 5 Clear mold 6 Package 7 Ceramic substrate 8 Polyparaxylylene film 9 Liquid coating film 10 Printed wiring 11a Light receiving window (by lapping treatment) 11b Light receiving window (glass) 12 Lead Frame 13 Vaporization chamber 14 Pyrolysis chamber 15 Deposition chamber 19 Protective coating

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】基板上に実装したオートフォーカス用セン
サを持つオートフォーカスＩＣにおいて、その表面に有
機膜の保護膜を有することを特徴とするオートフォーカ
スＩＣ。1. An autofocus IC having an autofocus sensor mounted on a substrate, which has a protective film of an organic film on its surface. 【請求項２】保護膜が、ポリ−パラ−キシリレンである
ことを特徴とする請求項１記載のオートフォーカスＩ
Ｃ。2. The autofocus I according to claim 1, wherein the protective film is poly-para-xylylene.
C. 【請求項３】ポリ−パラ−キシリレンが、ポリ−モノク
ロロ−パラ−キシリレン、ポリ−ジクロロ−パラ−キシ
リレン、ポリ−モノメチル−パラ−キシリレンのいずれ
かであることを特徴とする請求項２記載のオートフォー
カスＩＣ。3. The poly-para-xylylene is any one of poly-monochloro-para-xylylene, poly-dichloro-para-xylylene and poly-monomethyl-para-xylylene. Autofocus IC. 【請求項４】基板上に実装したオートフォーカスＩＣの
表面に、蒸着重合法によりポリ−パラ−キシリレンの保
護膜を形成することを特徴とするオートフォーカスセン
サの製造方法4. A method for manufacturing an autofocus sensor, which comprises forming a poly-para-xylylene protective film on the surface of an autofocus IC mounted on a substrate by vapor deposition polymerization. 【請求項５】保護膜が、シリコーン樹脂であることを特
徴とする請求項１記載のオートフォーカスＩＣ。5. The autofocus IC according to claim 1, wherein the protective film is a silicone resin. 【請求項６】ワイヤボンディング部分のみに保護膜が形
成されていることを特徴とする請求項５記載のオートフ
ォーカスＩＣ。6. The autofocus IC according to claim 5, wherein a protective film is formed only on the wire bonding portion. 【請求項７】基板上に実装したオートフォーカスＩＣの
表面に、液状のコーティング剤を塗布し、重合硬化させ
て保護膜を形成することを特徴とする請求項５または６
記載のオートフォーカスＩＣの製造方法7. A protective film is formed by applying a liquid coating agent on the surface of an autofocus IC mounted on a substrate and polymerizing and curing the coating agent.
Method for manufacturing the described autofocus IC
JP8051284A 1996-03-08 1996-03-08 Autofocus ic and its manufacture Pending JPH09246307A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8051284A JPH09246307A (en) 1996-03-08 1996-03-08 Autofocus ic and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8051284A JPH09246307A (en) 1996-03-08 1996-03-08 Autofocus ic and its manufacture

Publications (1)

Publication Number Publication Date
JPH09246307A true JPH09246307A (en) 1997-09-19

Family

ID=12882642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8051284A Pending JPH09246307A (en) 1996-03-08 1996-03-08 Autofocus ic and its manufacture

Country Status (1)

Country Link
JP (1) JPH09246307A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421650B1 (en) * 1998-06-15 2004-03-10 키시모토 상교 컴퍼니 리미티드 Insulating film for semiconductor device and semiconductor device
US7347347B2 (en) 1999-05-28 2008-03-25 Fujitsu Limited Head assembly, disk unit, and bonding method and apparatus
CN108257884A (en) * 2018-01-24 2018-07-06 德淮半导体有限公司 Semiconductor devices and forming method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421650B1 (en) * 1998-06-15 2004-03-10 키시모토 상교 컴퍼니 리미티드 Insulating film for semiconductor device and semiconductor device
US7347347B2 (en) 1999-05-28 2008-03-25 Fujitsu Limited Head assembly, disk unit, and bonding method and apparatus
CN108257884A (en) * 2018-01-24 2018-07-06 德淮半导体有限公司 Semiconductor devices and forming method thereof

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