JPH0480531B2 - - Google Patents

Info

Publication number: JPH0480531B2
Authority: JP; Japan
Prior art keywords: substrate; resist; resist film; temperature; cooling
Prior art date: 1983-01-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP58005876A

Other languages

English (en)

Japanese (ja)

Other versions

JPS59132127A (ja

Inventor

Yoshihide Kato

Kinya Usuda

Kei Kirita

Toshiaki Shinozaki

Nobuji Tsucha

Fumiaki Shigemitsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-01-19

Filing date

1983-01-19

Publication date

1992-12-18

1983-01-19 Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd

1983-01-19 Priority to JP587683A priority Critical patent/JPS59132127A/ja

1984-01-16 Priority to KR1019840000153A priority patent/KR860002082B1/ko

1984-01-18 Priority to DE88102726T priority patent/DE3486187T2/de

1984-01-18 Priority to EP84300297A priority patent/EP0114126B1/en

1984-01-18 Priority to EP88102726A priority patent/EP0275126B1/en

1984-01-18 Priority to DE8484300297T priority patent/DE3478060D1/de

1984-07-30 Publication of JPS59132127A publication Critical patent/JPS59132127A/ja

1985-10-22 Priority to US06/789,366 priority patent/US4717645A/en

1987-10-15 Priority to US07/108,767 priority patent/US4897337A/en

1989-11-27 Priority to US07/441,479 priority patent/US5051338A/en

1992-12-18 Publication of JPH0480531B2 publication Critical patent/JPH0480531B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 44
238000001816 cooling Methods 0.000 claims description 27
238000000034 method Methods 0.000 claims description 23
239000002245 particle Substances 0.000 claims description 5
230000001678 irradiating effect Effects 0.000 claims description 2
230000015572 biosynthetic process Effects 0.000 claims 1
230000008569 process Effects 0.000 description 13
238000010586 diagram Methods 0.000 description 8
230000007246 mechanism Effects 0.000 description 8
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
239000003507 refrigerant Substances 0.000 description 6
239000007788 liquid Substances 0.000 description 5
239000007789 gas Substances 0.000 description 4
239000002904 solvent Substances 0.000 description 4
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
239000002826 coolant Substances 0.000 description 3
238000011161 development Methods 0.000 description 3
238000010894 electron beam technology Methods 0.000 description 3
239000000463 material Substances 0.000 description 3
238000004528 spin coating Methods 0.000 description 3
230000008859 change Effects 0.000 description 2
238000001035 drying Methods 0.000 description 2
NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
230000005855 radiation Effects 0.000 description 2
239000007921 spray Substances 0.000 description 2
BOASSOYETJYEJF-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-chloroprop-2-enoate Chemical compound FC(F)(F)COC(=O)C(Cl)=C BOASSOYETJYEJF-UHFFFAOYSA-N 0.000 description 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
238000009529 body temperature measurement Methods 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000000110 cooling liquid Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
230000009477 glass transition Effects 0.000 description 1
230000017525 heat dissipation Effects 0.000 description 1
238000007654 immersion Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
238000005192 partition Methods 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
239000004926 polymethyl methacrylate Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
230000007723 transport mechanism Effects 0.000 description 1
235000012431 wafers Nutrition 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)
Electron Beam Exposure (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

JP587683A 1983-01-19 1983-01-19 レジストパタ−ンの形成方法及び装置 Granted JPS59132127A (ja)

Priority Applications (9)

Application Number	Priority Date	Filing Date	Title
JP587683A JPS59132127A (ja)	1983-01-19	1983-01-19	レジストパタ−ンの形成方法及び装置
KR1019840000153A KR860002082B1 (ko)	1983-01-19	1984-01-16	레지스트 패턴의 형성 방법 및 장치
DE8484300297T DE3478060D1 (en)	1983-01-19	1984-01-18	Method for forming resist pattern
EP84300297A EP0114126B1 (en)	1983-01-19	1984-01-18	Method for forming resist pattern
EP88102726A EP0275126B1 (en)	1983-01-19	1984-01-18	Method and apparatus for forming resist pattern
DE88102726T DE3486187T2 (de)	1983-01-19	1984-01-18	Verfahren und Vorrichtung zur Herstellung von Schutzlackbildern.
US06/789,366 US4717645A (en)	1983-01-19	1985-10-22	Method and apparatus for forming resist pattern
US07/108,767 US4897337A (en)	1983-01-19	1987-10-15	Method and apparatus for forming resist pattern
US07/441,479 US5051338A (en)	1983-01-19	1989-11-27	Method and apparatus for forming resist pattern

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP587683A JPS59132127A (ja)	1983-01-19	1983-01-19	レジストパタ−ンの形成方法及び装置

Publications (2)

Publication Number	Publication Date
JPS59132127A JPS59132127A (ja)	1984-07-30
JPH0480531B2 true JPH0480531B2 (zh)	1992-12-18

Family

ID=11623112

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP587683A Granted JPS59132127A (ja)	1983-01-19	1983-01-19	レジストパタ−ンの形成方法及び装置

Country Status (1)

Country	Link
JP (1)	JPS59132127A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61156814A (ja) *	1984-12-28	1986-07-16	Toshiba Corp	レジストベ−キング方法およびレジストベ−キング装置
JPS6381820A (ja) *	1986-09-25	1988-04-12	Toshiba Corp	レジストパタ−ン形成方法
JPH0250163A (ja) *	1988-05-09	1990-02-20	Mitsubishi Electric Corp	パターン形成方法
JPH0250165A (ja) *	1988-05-09	1990-02-20	Mitsubishi Electric Corp	パターン形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5398782A (en) *	1976-12-29	1978-08-29	Fujitsu Ltd	Positioning method for exposure unit
JPS54150079A (en) *	1978-05-18	1979-11-24	Cho Lsi Gijutsu Kenkyu Kumiai	Method of forming pattern
JPS57149731A (en) *	1981-03-11	1982-09-16	Seiko Epson Corp	Exposing device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS50113347U (zh) *	1974-02-27	1975-09-16

1983
- 1983-01-19 JP JP587683A patent/JPS59132127A/ja active Granted

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5398782A (en) *	1976-12-29	1978-08-29	Fujitsu Ltd	Positioning method for exposure unit
JPS54150079A (en) *	1978-05-18	1979-11-24	Cho Lsi Gijutsu Kenkyu Kumiai	Method of forming pattern
JPS57149731A (en) *	1981-03-11	1982-09-16	Seiko Epson Corp	Exposing device

Also Published As

Publication number	Publication date
JPS59132127A (ja)	1984-07-30

Publication	Publication Date	Title
KR860002082B1 (ko)	1986-11-24	레지스트 패턴의 형성 방법 및 장치
JPH0546091B2 (zh)	1993-07-13
JPH0480531B2 (zh)	1992-12-18
US4897337A (en)	1990-01-30	Method and apparatus for forming resist pattern
JPS60117626A (ja)	1985-06-25	レジストパタ−ンの形成方法及びレジスト処理装置
JPH0142624B2 (zh)	1989-09-13
JPS59132618A (ja)	1984-07-30	レジストパタ−ンの形成方法及びその装置
JPS60176236A (ja)	1985-09-10	レジスト処理装置
JPH0586642B2 (zh)	1993-12-13
JPH061759B2 (ja)	1994-01-05	レジストパタ−ンの形成方法
JPS60117625A (ja)	1985-06-25	レジストパタ−ンの形成方法及びレジスト処理装置
JPH0465525B2 (zh)	1992-10-20
EP0185366B1 (en)	1990-12-19	Method of forming resist pattern
JPS61147528A (ja)	1986-07-05	レジスト処理装置
JPH0465524B2 (zh)	1992-10-20
JPH0746676B2 (ja)	1995-05-17	レジストパターン形成方法
JPH0464171B2 (zh)	1992-10-14
JPS61180438A (ja)	1986-08-13	レジスト処理装置
JPS60157223A (ja)	1985-08-17	レジストパタ−ンの形成方法及びレジスト処理装置
JPS60157224A (ja)	1985-08-17	レジストパタ−ンの形成方法及びレジスト処理装置
JPS59132619A (ja)	1984-07-30	レジストパタ−ンの形成方法及びその装置
JPS60157225A (ja)	1985-08-17	レジストパタ−ン形成方法
JPH045258B2 (zh)	1992-01-30
JPS59195828A (ja)	1984-11-07	レジストパタ−ン形成方法及びレジスト処理装置
JPS61147527A (ja)	1986-07-05	レジストパタ−ンの形成方法