JPH0475329A - Heat treatment apparatus - Google Patents
Heat treatment apparatusInfo
- Publication number
- JPH0475329A JPH0475329A JP19012190A JP19012190A JPH0475329A JP H0475329 A JPH0475329 A JP H0475329A JP 19012190 A JP19012190 A JP 19012190A JP 19012190 A JP19012190 A JP 19012190A JP H0475329 A JPH0475329 A JP H0475329A
- Authority
- JP
- Japan
- Prior art keywords
- coil heater
- heat
- reaction tube
- crank
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 239000011810 insulating material Substances 0.000 claims abstract description 15
- 230000020169 heat generation Effects 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 238000009826 distribution Methods 0.000 abstract description 6
- 238000000605 extraction Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 15
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012774 insulation material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は半導体ウェハ製造工程の熱処理装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a heat treatment apparatus for a semiconductor wafer manufacturing process.
［従来の技術］
従来から、半導体ウェハ製造工程におけるＣ■Ｄ装置、
エピタキシャル装置、酸化膜形成装置、拡散装置等の成
膜装置にはバッチ式熱処理装置が多用されている。この
熱処理装置は、半導体ウェハを多数支持した石英製のウ
エノ＼ボートが収容される反応管と、この反応管の外周
に巻回されるコイルヒータと、これらを被覆する断熱材
等を備え、反応管内に反応ガスを供給して８００〜１２
００℃の温度で半導体ウェハ上の成膜を行うものである
。このような熱処理装置の反応管は例えば２ｍと長いも
のであって、管軸に垂直に所定の間隔で積層されて配置
された半導体ウェハを処理するのであるが、半導体ウェ
ハの高集積化、大口径化が進むにつれ、膜厚が高精度に
均一であること、即ち、成膜速度を一定にするための反
応管内の温度均一が重要な問題となっている。[Prior art] Conventionally, CD equipment in the semiconductor wafer manufacturing process,
Batch type heat treatment equipment is often used in film forming equipment such as epitaxial equipment, oxide film forming equipment, and diffusion equipment. This heat treatment equipment is equipped with a reaction tube in which a quartz Ueno boat supporting a large number of semiconductor wafers is housed, a coil heater wound around the outer periphery of this reaction tube, and a heat insulating material covering these. 800~12 by supplying reaction gas into the tube
The film is formed on a semiconductor wafer at a temperature of 00°C. The reaction tubes of such heat treatment equipment are long, for example, 2 m, and are used to process semiconductor wafers stacked at predetermined intervals perpendicular to the tube axis. As technology advances, it has become important to ensure that the film thickness is uniform with high precision, that is, that the temperature within the reaction tube is uniform in order to keep the film formation rate constant.
［発明が解決しようとする課題］
このような問題に対処すべく反応管内の温度分布を均一
にするため、コイルヒータをいくつかのゾーンに・分割
し、各ゾーンに対して適宜加熱温度の調整を行うことが
できるよう、供給電量の増減を行うようにしている。し
かしながら、コイルヒータの端子引出し部は断熱材を貫
通して設けられるため、この端子引出し部を通って熱の
逃げが生じてしまい、例えば１０００℃で±３℃の断面
温度差が生じ、この温度分布を除去するのは容易なこと
ではなかった。そのため、コイルヒータに一端を接続さ
れた端子引出し線を断熱材中でこの部位から屈曲させ、
管軸方向に沿って変位させ、この変位させた部位から断
熱材外に引出すようにしたり、あるいは断熱材層が薄い
場合は、この部分に断熱材層を加え、厚くして上記のよ
うに引出し部位を変位させていた（実公平１−２０６４
０号、実公昭５３−４０７６１号公報）。また、この引
出し部に接続される電流供給導線との熱伝導を遮断する
ため、引出し部の中間に断面積の小さい部分を設け、こ
の部分で発熱させたりしていた（実公平１−３４８６６
号公報）。[Problem to be solved by the invention] In order to deal with such problems, in order to make the temperature distribution inside the reaction tube uniform, the coil heater is divided into several zones and the heating temperature is adjusted appropriately for each zone. We are trying to increase or decrease the amount of power supplied so that we can do this. However, since the terminal lead-out part of the coil heater is provided through the insulation material, heat escapes through this terminal lead-out part, resulting in a cross-sectional temperature difference of ±3°C at 1000°C, for example. Eliminating the distribution was not easy. Therefore, the terminal lead wire, whose one end is connected to the coil heater, is bent from this part in the insulation material.
You can displace it along the axis of the pipe and pull it out from the displaced area, or if the insulation layer is thin, add a layer of insulation to this area, make it thicker, and pull it out as shown above. The body part was displaced (Jikkoi 1-2064
No. 0, Utility Model Publication No. 53-40761). In addition, in order to cut off heat conduction with the current supply conductor connected to this drawer, a part with a small cross-sectional area was provided in the middle of the drawer, and this part generated heat.
Publication No.).
しかしながら、これらの端子引出し部は、良導体で構成
されているため、コイルヒータとの温度差は非常に大き
くコイルヒータからの熱の逃げは避けられないものてあ
り、１２００’Ｃの加熱温度においては断面温度分布が
生じてしまい、断面均熱は十分でなかった。However, since these terminal drawers are made of a good conductor, the temperature difference between them and the coil heater is very large, and heat escape from the coil heater is unavoidable, and at a heating temperature of 1200'C, Cross-sectional temperature distribution occurred, and cross-sectional uniform heating was not sufficient.
本発明は上記の欠点を解消するためになされたものであ
って、コイルヒータの端子引出し部から生ずる反応管内
の温度分布をなくし、高精度に均一な断面温度を保持し
、高品位な半導体ウエノ１の成膜可能な熱処理装置を提
供することを目的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks, and it eliminates the temperature distribution inside the reaction tube caused by the terminal extraction part of the coil heater, maintains a uniform cross-sectional temperature with high precision, and improves the quality of semiconductor wafers. An object of the present invention is to provide a heat treatment apparatus capable of forming a film.
［課題を解決するための手段］
上記の目的を達成するため、本発明の熱処理装置は、反
応管と、前記反応管の外周に設けられるコイルヒータと
、前記反応管及び前記コイルヒータを被覆する断熱材と
、前記断熱材を貫通して設けられる前記コイルヒータの
端子引出し部とを備えた熱処理装置において、前記端子
引出し部は実質的に前記コイルヒータの単位長さの発熱
量以上の発熱量を有する抵抗発熱体を設けたものである
。[Means for Solving the Problems] In order to achieve the above object, the heat treatment apparatus of the present invention includes a reaction tube, a coil heater provided on the outer periphery of the reaction tube, and a coil heater that covers the reaction tube and the coil heater. In a heat treatment apparatus comprising a heat insulating material and a terminal draw-out portion of the coil heater provided to penetrate the heat insulating material, the terminal draw-out portion has a heat generation amount substantially greater than the heat generation amount of a unit length of the coil heater. A resistive heating element is provided.
さらに前記抵抗発熱体は、網線または撚線であってもよ
い。Further, the resistance heating element may be a mesh wire or a stranded wire.
［作用］
熱処理装置は、反応管と、反応管の外周に設けられるコ
イルヒータと、コイルヒータからの熱が反応管を効率よ
く加熱するよう断熱材と、断熱材を貫通する端子引出し
部等から成っている。[Function] The heat treatment device includes a reaction tube, a coil heater provided on the outer periphery of the reaction tube, a heat insulating material so that the heat from the coil heater efficiently heats the reaction tube, and a terminal drawer that penetrates the heat insulating material. It has become.
そのため、コイルヒータに供給する電流は、断熱材を貫
通して設けられる端子引出し部を介して供給されるよう
になっている。この端子引出し部にコイルヒータの単位
長さあたりの発熱量と同程度もしくはそれ以上の発熱量
を有する抵抗発熱体を設け、端子引出し部を積極的に加
熱することにより端子引出し部からの熱の逃げを防止す
ることができる。従って、反応管内の軸方向のみでなく
、断面においても温度の不均一を生じることがない。Therefore, the current to be supplied to the coil heater is supplied through a terminal lead-out portion provided through the heat insulating material. A resistive heating element having a heat generation amount equal to or greater than the heat generation amount per unit length of the coil heater is provided in this terminal draw-out part, and the heat from the terminal draw-out part is removed by actively heating the terminal draw-out part. Escape can be prevented. Therefore, temperature non-uniformity does not occur not only in the axial direction but also in the cross section within the reaction tube.
そのため、高精度に均一な半導体ウェハを製造すること
ができる。Therefore, uniform semiconductor wafers can be manufactured with high precision.
また、端子引出し部の抵抗発熱体を網線または撚線とす
ることで発熱により膨張した体積変化を断熱材層中で網
線または撚線が変形して吸収できる。そのため、耐久性
も向上させることができる。Furthermore, by using a mesh wire or stranded wire as the resistance heating element in the terminal draw-out portion, the volume change caused by expansion due to heat generation can be absorbed by deformation of the mesh wire or stranded wire in the heat insulating material layer. Therefore, durability can also be improved.
［実施例］
本発明の熱処理装置を適用した一実施例を図面を参照し
て説明する。[Example] An example to which the heat treatment apparatus of the present invention is applied will be described with reference to the drawings.
第１図に示すバッチ式縦型熱処理装置１は、半導体ウェ
ハを複数枚水平に支持したウェハボート３が内部に配置
される反応管４を備える。反応管４はウェハボート３の
搬入用を行う開口部５を有し、開口部５を開閉する蓋体
６、開口部５の反対側に反応ガス供給系（図示せず）に
接続された反応ガス供給ロア及び開口部５の近傍に排気
系（図示せず）に接続された排気口８を備える。この反
応管４の外周にはコイルヒータ９が端子引出し部９１．
９２．９３及び９４を有して３つのゾーン９５．９６及
び９７に分割されて半導体ウェハ配列領域を均熱にする
制御が可能に設けられる。電力を供給する端子引出し部
９１．９２．９３及び９４はコイルヒータ９の外周に設
けられる断熱材１０を貫通して図示しない外部電源に接
続される。A batch-type vertical heat treatment apparatus 1 shown in FIG. 1 includes a reaction tube 4 in which a wafer boat 3 that horizontally supports a plurality of semiconductor wafers is disposed. The reaction tube 4 has an opening 5 for loading the wafer boat 3, a lid 6 for opening and closing the opening 5, and a reaction tube connected to a reaction gas supply system (not shown) on the opposite side of the opening 5. An exhaust port 8 connected to an exhaust system (not shown) is provided near the gas supply lower and the opening 5. A coil heater 9 is attached to the outer periphery of the reaction tube 4 at a terminal extraction portion 91.
The zone 92, 93 and 94 is divided into three zones 95, 96 and 97 to enable control to uniformly heat the semiconductor wafer arrangement area. Terminal lead-out portions 91, 92, 93 and 94 for supplying power pass through a heat insulating material 10 provided around the outer periphery of the coil heater 9 and are connected to an external power source (not shown).
端子引出し部９１．９２．９３及び９４は、第２図に示
すようにコイルヒータ９と同じ材質でコイルヒータ９の
外径と同じかあるいはそれより細い外径（例えばコイル
ヒータ９の外径がφ９ｍｍであればφ９〜８ ｍｍ）を
有する抵抗発熱体であるクランク管１１と、さらにこの
クランク管１１に接続される同じく抵抗発熱体から成る
板状体１２とから成っている。クランク管１１は断熱材
１０中で屈曲され、コイルヒータ９に接続される部位１
３と断熱材１０から突出する部位１４が反応管の長手方
向に変位（例えば５０〜１５０ｍｍ）して形成される。As shown in FIG. 2, the terminal drawers 91, 92, 93 and 94 are made of the same material as the coil heater 9 and have an outer diameter that is the same as or smaller than the outer diameter of the coil heater 9 (for example, the outer diameter of the coil heater 9 is smaller than the outer diameter of the coil heater 9). It consists of a crank pipe 11 which is a resistance heating element having a diameter of 9 mm to 8 mm, and a plate-shaped body 12 which is also a resistance heating element and is connected to the crank pipe 11. The crank pipe 11 is bent in the heat insulating material 10 and is connected to the coil heater 9 at a portion 1.
3 and a portion 14 protruding from the heat insulating material 10 are formed to be displaced (for example, 50 to 150 mm) in the longitudinal direction of the reaction tube.
この変位量はコイルヒータ９の加熱温度や、断熱材１０
の厚さ等により適宜選択され得る。This amount of displacement is determined by the heating temperature of the coil heater 9 and the heat insulating material 10.
The thickness can be selected as appropriate depending on the thickness and the like.
クランク管１１はコイルヒータ９及び板状体１２に溶接
される。板状体１２はクランク管１１より大きな断面積
（例えば６ ｍｍＸ ３０ ｍｍ）を有し、長さ５０ｍ
ｍ以上に形成され、他端に図示しない導線がねじ止めさ
れている。The crank pipe 11 is welded to the coil heater 9 and the plate-shaped body 12. The plate-shaped body 12 has a larger cross-sectional area (for example, 6 mm x 30 mm) than the crank pipe 11, and has a length of 50 m.
m or more, and a conductive wire (not shown) is screwed to the other end.
ここで、コイルヒータ９の材質は、例えばＦｅＣｒＡＪ
）やＭ ｏ Ｓ １２等の抵抗発熱体であって、端子引
出し部９１−”９４を構成するクランク管１１や板状体
１２もこのような抵抗発熱体で形成される。端子引出し
部をコイルヒータと同じような抵抗発熱体で形成するこ
とにより、コイルヒータと同程度に発熱し、端子引出し
部を積極的に加熱することで端子引出し部から熱の逃げ
を無くし反応管内の温度低下を防止する。Here, the material of the coil heater 9 is, for example, FeCrAJ.
) and M o S 12, and the crank tube 11 and plate-like body 12 that constitute the terminal draw-out portions 91 to 94 are also formed of such resistance heat-generating bodies. By forming it with a resistance heating element similar to a heater, it generates the same amount of heat as a coil heater, and actively heats the terminal drawer to eliminate heat escaping from the terminal drawer and prevent temperature drop inside the reaction tube. do.
以上のような構成の熱処理装置の作用を説明する。半導
体ウェハ２を支持したウェハボート３が反応管４の開口
部５から挿入され蓋体６が閉じられると、排気系により
反応管４内が減圧される。The operation of the heat treatment apparatus configured as above will be explained. When the wafer boat 3 supporting the semiconductor wafers 2 is inserted through the opening 5 of the reaction tube 4 and the lid 6 is closed, the pressure inside the reaction tube 4 is reduced by the exhaust system.
コイルヒータ９の端子引出し部９１〜９４を介して各ゾ
ーン９５．９６．９７により所望の電流が供給されるよ
う調整された電流がコイルヒータ９に供給されコイルヒ
ータ９の発熱のため反応管４が加熱される。この時、コ
イルヒータ９の各ゾーン９５．９６．９７にはそれぞれ
板状体１２及びクランク管１１を通過して電流が供給さ
れるが、クランク管１１はコイルヒータ９の断面と同じ
か小さいため、コイルヒータ９と同じまたはより高く発
熱し、しかもクランク管１１のコイルヒータ９の接続部
位１３と断熱材１０から突出する部位１４とが変位して
いるため、より熱の逃げが起こりにくい。従来の断面の
温度分布が±３℃前後生じてしまったものを±１．２℃
に減少することができ、しかもクランク管１１はクラン
ク管１１の断面より大きい断面を有する板状体１２を介
して導線に接続されるため、クランク管１１の発熱を緩
衝し導線の熱による劣化を防ぐことができる。A current adjusted so that a desired current is supplied to each zone 95, 96, 97 is supplied to the coil heater 9 through the terminal draw-out portions 91 to 94 of the coil heater 9, and the reaction tube 4 is heated by the coil heater 9. is heated. At this time, current is supplied to each zone 95, 96, 97 of the coil heater 9 through the plate member 12 and the crank tube 11, but since the crank tube 11 is the same or smaller in cross section than the coil heater 9, , generates the same or higher heat than the coil heater 9, and since the connecting portion 13 of the coil heater 9 of the crank pipe 11 and the portion 14 protruding from the heat insulating material 10 are displaced, it is more difficult for heat to escape. The temperature distribution of the conventional cross section was around ±3℃, but it is now ±1.2℃.
Moreover, since the crank pipe 11 is connected to the conductor via the plate-shaped body 12 having a cross section larger than that of the crank pipe 11, it buffers the heat generated by the crank pipe 11 and prevents deterioration of the conductor due to heat. It can be prevented.
他の実施例として、クランク管とコイルヒータとの接続
方法は、コイルヒータを切断し、クランク管１１を挟持
するようにしてもよい。また、屈曲したクランク管１１
を用いず、この部分を直管にしても同様の効果を得るこ
とができる。As another embodiment, the crank pipe and the coil heater may be connected by cutting off the coil heater and sandwiching the crank pipe 11 between them. In addition, the bent crank pipe 11
The same effect can be obtained even if this part is made of a straight pipe instead of using a pipe.
さらに、他の実施例として、端子引出し部のクランク管
を第３図及び第４図に示すように細線１５の網線１６や
撚線１７で形成してもよい。細線１５はコイルヒータを
同様の単位長さあたりの発熱量を有する抵抗発熱体であ
るためこの網線１６や撚線１７を介してコイルヒータに
電流を供給すれば、同温度もしくはそれ以上の温度に発
熱する。Furthermore, as another embodiment, the crank tube of the terminal draw-out portion may be formed of a mesh wire 16 of thin wires 15 or a twisted wire 17 as shown in FIGS. 3 and 4. The thin wire 15 is a resistance heating element that has the same amount of heat per unit length as the coil heater, so if current is supplied to the coil heater through the mesh wire 16 or the stranded wire 17, the temperature will be the same or higher. develops a fever.
しかも細線１５の集合体であるため、端部をコイルヒー
タと板状態に溶接され固定されていても加熱による熱膨
張は断熱材内で柔軟に変形できるため吸収されて固定部
分に応力がかかることがない。Moreover, since it is a collection of thin wires 15, even if the ends are welded and fixed to the coil heater in a plate state, thermal expansion due to heating can be flexibly deformed within the insulation material, so it is absorbed and stress is applied to the fixed part. There is no.
上記の説明は本発明の一実施例の説明であって、本発明
は、これに限定されることはない。即ち、コイルヒータ
はＦｅＣｒＡＩＪで形成されるものとは限定されず、他
の公知のものであってよく、これに接続される端子の材
質はコイルヒータと同じものでなくともよく、コイルヒ
ータと単位長さあたりの発熱量が同じもしくはそれ以上
であれば好適に使用できる。The above description is a description of one embodiment of the present invention, and the present invention is not limited thereto. In other words, the coil heater is not limited to one made of FeCrAIJ, and may be made of other known materials, and the material of the terminal connected to it does not have to be the same as the coil heater, and the coil heater and the unit may be different from each other. It can be suitably used if the calorific value per length is the same or greater.
［発明の効果］
以上の実施例からも明らかなように、本発明の熱処理装
置のコイルヒータの端子引出し部をコイルヒータの単位
長さあたりの発熱量と同程度もしくはそれ以上の発熱量
を有するものとしたため、端子引出し部を積極的に加熱
して端子引出し部を通してコイルヒータの熱が逃げるこ
とがない。そのため、反応管内の長手方向の均熱のみで
なく断面均熱も高精度に保持することができる。従って
、半導体ウェハ上に形成される成膜の速度は一定であっ
て、膜厚を均一にして高品位な半導体ウェハの製造を行
うことができる。しかも端子引出し部を抵抗発熱体の細
線の網線や撚線にすることで熱膨張による体積変化を吸
収し、端子接続部位の劣化を防止することができ、経済
的でもある。[Effects of the Invention] As is clear from the above examples, the terminal lead-out portion of the coil heater of the heat treatment apparatus of the present invention has a heat generation amount that is equal to or greater than the heat generation amount per unit length of the coil heater. This prevents the heat of the coil heater from escaping through the terminal drawer by actively heating the terminal drawer. Therefore, not only the uniform heating in the longitudinal direction within the reaction tube but also the uniform heating in the cross section can be maintained with high precision. Therefore, the rate of film formation on the semiconductor wafer is constant, and a high-quality semiconductor wafer can be manufactured with uniform film thickness. In addition, by making the terminal draw-out portion a mesh wire or stranded wire of the resistive heating element, volume changes due to thermal expansion can be absorbed, and deterioration of the terminal connection area can be prevented, which is also economical.
第１図は本発明の熱処理装置を適用した一実施例の構成
図、第２図は第１図に示す一実施例の要部を示す図、第
３図及び第４図は他の実施例を示す図である。
・・・・・・熱処理装置
・・・・・・反応管
・・・・・・コイルヒータ
１．９２．９３．９
５・・・・・・細線
６・・・・・・網線
７・・・・・・撚線Fig. 1 is a configuration diagram of an embodiment to which the heat treatment apparatus of the present invention is applied, Fig. 2 is a diagram showing the main part of the embodiment shown in Fig. 1, and Figs. 3 and 4 are other embodiments. FIG. ...Heat treatment device ...Reaction tube ...Coil heater 1.92.93.9 5 ...Thin wire 6 ...Mesh wire 7・・・・・・Twisted wire
Claims (1)
ータと、前記反応管及び前記コイルヒータを被覆する断
熱材と、前記断熱材を貫通して設けられる前記コイルヒ
ータの端子引出し部とを備えた熱処理装置において、前
記端子引出し部は実質的に前記コイルヒータの単位長さ
の発熱量以上の発熱量を有する抵抗発熱体で構成したこ
とを特徴とする熱処理装置。 ２、前記抵抗発熱体は、網線または撚線であることを特
徴とする第１項記載の熱処理装置。[Scope of Claims] 1. A reaction tube, a coil heater provided on the outer periphery of the reaction tube, a heat insulating material covering the reaction tube and the coil heater, and a coil heater provided penetrating the heat insulating material. A heat treatment apparatus comprising a terminal draw-out section, wherein the terminal draw-out section is substantially constituted by a resistance heating element having a heat generation amount greater than the heat generation amount of a unit length of the coil heater. 2. The heat treatment apparatus according to item 1, wherein the resistance heating element is a mesh wire or a stranded wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2190121A JP2974030B2 (en) | 1990-07-18 | 1990-07-18 | Heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2190121A JP2974030B2 (en) | 1990-07-18 | 1990-07-18 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0475329A true JPH0475329A (en) | 1992-03-10 |
| JP2974030B2 JP2974030B2 (en) | 1999-11-08 |
Family
ID=16252743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2190121A Expired - Lifetime JP2974030B2 (en) | 1990-07-18 | 1990-07-18 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2974030B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0550726U (en) * | 1991-12-10 | 1993-07-02 | 国際電気株式会社 | Wafer heating heater for single-wafer diffusion / CVD equipment |
| JPH05291159A (en) * | 1992-04-14 | 1993-11-05 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
| JP2007110163A (en) * | 2007-01-10 | 2007-04-26 | Hitachi Kokusai Electric Inc | Semiconductor processing apparatus and heat treatment device |
-
1990
- 1990-07-18 JP JP2190121A patent/JP2974030B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0550726U (en) * | 1991-12-10 | 1993-07-02 | 国際電気株式会社 | Wafer heating heater for single-wafer diffusion / CVD equipment |
| JPH05291159A (en) * | 1992-04-14 | 1993-11-05 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
| JP2007110163A (en) * | 2007-01-10 | 2007-04-26 | Hitachi Kokusai Electric Inc | Semiconductor processing apparatus and heat treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2974030B2 (en) | 1999-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH079036Y2 (en) | Vertical heat treatment furnace | |
| US6242719B1 (en) | Multiple-layered ceramic heater | |
| US5344492A (en) | Vapor growth apparatus for semiconductor devices | |
| KR101139612B1 (en) | Planar heater | |
| JPH02263428A (en) | Semiconductor wafer heating device | |
| JP3471100B2 (en) | Vertical heat treatment equipment | |
| US20060089264A1 (en) | Method of heat treating HTc conductors in a large fabricated system | |
| JPH0475329A (en) | Heat treatment apparatus | |
| US6344632B1 (en) | Round heating plate used in a heating chamber for semiconductor device manufacturing | |
| JP4262908B2 (en) | Heat treatment apparatus and heat treatment method | |
| JPH01236615A (en) | Heat-treatment device | |
| JPH04318923A (en) | Heater | |
| JP2760855B2 (en) | Heating element structure in heat treatment apparatus for semiconductor manufacturing and heat treatment method for semiconductor device | |
| JPH0554690B2 (en) | ||
| JP3422017B2 (en) | Constant temperature bath | |
| JP2012089557A (en) | Substrate processing equipment and method for manufacturing semiconductor device | |
| US6806432B1 (en) | Superconducting coils | |
| JPS62144333A (en) | Heater | |
| JP2698818B2 (en) | Heat treatment equipment | |
| JPS62170481A (en) | Tubular electric furnace | |
| JPH08181082A (en) | Vertical-type high-speed heat treatment device | |
| JPS61141123A (en) | Equipment for manufacturing semiconductor | |
| JP2644819B2 (en) | heating furnace | |
| JPH01192113A (en) | Heating furnace | |
| JPS6287500A (en) | Diffusion furnace |