JPH01192113A - Heating furnace - Google Patents
Heating furnaceInfo
- Publication number
- JPH01192113A JPH01192113A JP1795188A JP1795188A JPH01192113A JP H01192113 A JPH01192113 A JP H01192113A JP 1795188 A JP1795188 A JP 1795188A JP 1795188 A JP1795188 A JP 1795188A JP H01192113 A JPH01192113 A JP H01192113A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- core tube
- heat
- heater
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 6
- 238000002791 soaking Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Tunnel Furnaces (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、加熱炉に係り、特に多数の半導体ウェハ等の
熱拡散、ＣＶＤ等の熱処理に利用して好適な加熱炉に関
する。DETAILED DESCRIPTION OF THE INVENTION [Purpose of the Invention (Industrial Application Field) The present invention relates to a heating furnace, and in particular to a heating furnace suitable for use in heat treatment such as thermal diffusion and CVD of a large number of semiconductor wafers, etc. Regarding.
（従来の技術）
一般に、加熱炉は、半導体製造工程において熱拡散、Ｃ
ＶＤ等に利用される。(Prior Art) In general, heating furnaces are used for thermal diffusion, carbon
Used for DVDs, etc.
このような加熱炉では、半導体ウェハのロード・アンロ
ード時に炉内の温度変化が生じ易いので、ウェハボート
上に多数の半導体ウェハを配置し、この半導体ウェハを
ウェハボートとともに、例えば数百ないし十数百度程度
に加熱された炉心管内に配置して、多数の半導体ウェハ
の熱処理を同時に行うよう構成され、スループットの向
上を図ったものが多い。In such a heating furnace, the temperature inside the furnace tends to change when semiconductor wafers are loaded and unloaded. Many of them are arranged in a furnace tube heated to about several hundred degrees and are configured to perform heat treatment on a large number of semiconductor wafers at the same time, with the aim of improving throughput.
したがって、加熱炉では、炉心管内の温度均一性が要求
される。このため、従来の加熱炉、では、石英等からな
る炉心管の周囲にアウター管が配置され、その周囲には
加熱用のし−タが配置され、ｂ−夕の周囲を覆うように
多孔性の＠熱材等からなる断熱材層が配置されたものが
多い。Therefore, in a heating furnace, temperature uniformity within the furnace core tube is required. For this reason, in conventional heating furnaces, an outer tube is placed around a core tube made of quartz or the like, a heating shield is placed around the outer tube, and a porous tube is placed around the outer tube to cover the outer tube. Many of them have a heat insulating layer made of heat material, etc.
すなわち、従来の加熱炉では、熱伝導度の低い断熱材で
ヒータの周囲を覆い、外部への熱放出を減少化、均一化
して、炉心管内の温度分布の均一性を確保しようとする
ものである。In other words, in conventional heating furnaces, the heater is covered with an insulating material with low thermal conductivity to reduce and equalize the heat released to the outside, thereby ensuring uniform temperature distribution within the furnace core tube. be.
（発明が解決しようとする課題）
しかしながら、例えば半導体ウェハの熱処理において均
一な処理を行うためには、±０．５℃以内程度の温度均
一性が要求される。このため、さらに均熱特性に優れた
加熱炉の開発が望まれてぃた。(Problems to be Solved by the Invention) However, in order to perform uniform heat treatment on semiconductor wafers, for example, temperature uniformity within ±0.5° C. is required. For this reason, it has been desired to develop a heating furnace with even better heat uniformity characteristics.
本発明は、かかる従来の事情に対処してなされたもので
、従来に較べて均熱特性に優れ、被処理物を均一に処理
することのできる加熱炉を提供しようとするものである
。The present invention has been made in response to such conventional circumstances, and an object thereof is to provide a heating furnace that has superior heat-uniforming characteristics compared to the prior art and is capable of uniformly processing objects to be processed.
［発明の構成］
（課題を解決するための手段）
すなわち本発明は、少なくとも筒状の炉心管と、この炉
心管の周囲に配置されたヒータとを備えた加熱炉におい
て、前記炉心管の長手方向に沿って、熱伝導性の良好な
物質を配置したことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, the present invention provides a heating furnace including at least a cylindrical furnace core tube and a heater disposed around the furnace core tube. It is characterized by having a material with good thermal conductivity arranged along the direction.
（作 用）
本発明の加熱炉では、炉心管の長手方向に沿って、例え
ば表面に炭化ケイ素（ＳｉＣ）をコーティングされた筒
状のカーボン（Ｃ）等の熱伝導性の良好な物質が配置さ
れている。(Function) In the heating furnace of the present invention, a material with good thermal conductivity, such as cylindrical carbon (C) whose surface is coated with silicon carbide (SiC), is arranged along the longitudinal direction of the furnace core tube. has been done.
したがって、この熱伝導性の良好な物質により、熱が炉
心管の長手方向に速やかに移動し、従来に較べて炉心管
内の温度を均一化することができる。Therefore, due to this material having good thermal conductivity, heat can quickly move in the longitudinal direction of the reactor core tube, and the temperature within the reactor core tube can be made more uniform than in the past.
（実施例）
以下本発明の加熱炉を図面を参照して実施例について説
明する。(Example) Hereinafter, examples of the heating furnace of the present invention will be described with reference to the drawings.
例えば石英等からなり直径例えば２５０〜３５０１１ｎ
、長さ１５００〜２０００１１程度の円筒状に構成され
た炉心管１は、その中央部分を均熱区間１ａとされてお
り、炉心管１はこのアウター管２内に配置されている。For example, it is made of quartz and has a diameter of, for example, 250 to 35011 nm.
The furnace core tube 1 has a cylindrical shape with a length of approximately 1,500 to 200,011 mm, and its central portion is a soaking section 1a, and the furnace core tube 1 is disposed within this outer tube 2.
また、アウター管２の外側には、コイル状に形成された
加熱用のヒータ３が配置されており、均熱区間１ａ部分
のし−タ３の外側には、熱伝導性の良好な物質として、
例えば表面に炭化ケイ素（ＳｉＣ）をコーティングされ
たカーボン（Ｃ）からなる円筒状部材４が配置されてい
る。Further, a coil-shaped heater 3 is arranged outside the outer tube 2, and a material with good thermal conductivity is placed outside the shielder 3 in the soaking section 1a. ,
For example, a cylindrical member 4 made of carbon (C) whose surface is coated with silicon carbide (SiC) is arranged.
そして、この円筒状部材４の外側には、その周囲を覆う
ように、多孔性の断熱材等からなる断熱材層５が配置さ
れており、断熱材層５の外側にはヒータケース６が配置
されている。A heat insulating material layer 5 made of a porous heat insulating material or the like is arranged on the outside of this cylindrical member 4 so as to cover its periphery, and a heater case 6 is arranged on the outside of the heat insulating material layer 5. has been done.
なお、上記加熱用のヒータ３は、図示しない制御装置に
接続されており、炉心管１の長手方向に分割された領域
毎に、独立に温度制御されるゾーンコントロールとされ
ている。The heating heater 3 is connected to a control device (not shown), and has zone control where the temperature is independently controlled for each region divided in the longitudinal direction of the furnace tube 1.
また、断熱材層５には、例えば厚さ数十ないし数百ミク
ロン程度のアルミニウム箔等の反射材からなる反射材層
、あるいは１０００℃以上の高温となる場合は、白金等
からなる反射材層を配置してもよい。The heat insulating material layer 5 may include a reflective material layer made of a reflective material such as aluminum foil with a thickness of several tens to hundreds of microns, or a reflective material layer made of platinum or the like in the case of a high temperature of 1000° C. or more. may be placed.
上記構成のこの実施例の加熱炉では、ヒータ３によって
炉心管１内を例えば数百ないし十数百度程度に加熱する
。そして、例えば石英等からなるウェハボート７上に、
多数の半導体ウェハ８をそれらの主面がそれぞれ対向あ
るいは一方向に向くように配置し、この半導体ウェハ８
をウェハボート７ともに炉心管１の一端開口からソフト
ランディング等により炉心管１内の均熱区間１ａに配置
して、例えば熱拡散、ＣＶＤ等の熱処理を行う。In the heating furnace of this embodiment having the above configuration, the inside of the furnace core tube 1 is heated to, for example, several hundred to several hundred degrees Celsius by the heater 3. Then, on a wafer boat 7 made of, for example, quartz,
A large number of semiconductor wafers 8 are arranged so that their main surfaces face each other or face in one direction, and the semiconductor wafers 8
Both the wafer boat 7 and the wafer boat 7 are placed in the soaking section 1a in the furnace tube 1 by soft landing or the like from an opening at one end of the furnace tube 1, and heat treatment such as thermal diffusion or CVD is performed.
ここで、例えば表面に炭化ケイ素をコーティングされた
カーボンからなる円筒状部材４は、断熱材層５に較べて
、熱伝導率が三桁以上高、い、したがって、ヒータ３の
熱は、円筒状部材４により、炉心管１の長手方向に速や
かに伝すって、均熱区間１ａの範囲に、均一な温度の領
域を形成する。Here, for example, the cylindrical member 4 made of carbon whose surface is coated with silicon carbide has a thermal conductivity that is three orders of magnitude higher than that of the heat insulating material layer 5. Therefore, the heat of the heater 3 is The member 4 quickly spreads the temperature in the longitudinal direction of the furnace tube 1 to form a uniform temperature region in the soaking section 1a.
このため、従来の加熱炉に較べて炉心管１内の温度を均
一化することができる。Therefore, the temperature inside the furnace core tube 1 can be made more uniform than in conventional heating furnaces.
なお、上記実施例では、熱伝導性の良好な物質としての
円筒状部材４を、ヒータ３の外側に設けた例について説
明したが、このような円筒状部材４は、例えば第３図お
よび第４図に示すように、ヒータ３の内側に設けてもよ
く、あるいはし−タ３と同じ部位に設けてもよい。In the above embodiment, the cylindrical member 4, which is a material with good thermal conductivity, is provided outside the heater 3. As shown in FIG. 4, it may be provided inside the heater 3, or it may be provided at the same location as the heater 3.
また、熱伝導性の良好な物質は、炭化ケイ素をコーティ
ングしたカーボン以外の物質でもよく、その形状も、円
筒状に限らず、例えば棒状または板状の部材を円周に沿
って配列させても、網状の部材を巻き付けても、炉心管
１あるいはアウター管２に例えばスパッタリング等によ
り被着させてもよい、そして、長さについても、均熱区
間１ａの範囲のみに限られるものではない。In addition, the material with good thermal conductivity may be a material other than carbon coated with silicon carbide, and its shape is not limited to a cylindrical shape, for example, rod-like or plate-like members may be arranged along the circumference. The net-like member may be wrapped around it, or it may be attached to the furnace core tube 1 or outer tube 2 by sputtering or the like, and the length is not limited to the range of the soaking section 1a.
さらに、上記実施例では、横型炉について説明したが、
縦型炉にも連用することができることはもちろんである
。Furthermore, in the above embodiment, a horizontal furnace was explained, but
Of course, it can also be used in a vertical furnace.
「発明の効果］
上述のように、本発明の加熱炉によれば、従来の加熱炉
に歓べて炉心管内の温度を均一化することができ、半導
体ウェハ等の被処理物を均一に処理することができる。"Effects of the Invention" As described above, the heating furnace of the present invention can make the temperature inside the furnace tube more uniform than conventional heating furnaces, and can uniformly process objects such as semiconductor wafers. can do.
第１図および第２図は本発明の一実施例の加熱炉の要部
を示す断面図、第３図および第４図は他の実施例の加熱
ｆを示す断面図である。
１・・・・・・炉心管、２・・・・・・アウター管、３
・・・・・・ヒータ、４・・・・・・円筒状部材（熱伝
導性の良好な物質）、５・・・・・・断熱材層、６・・
・・・・ヒータケース、７・・・・・・ウェハボート、
８・・・・・・半導体ウェハ。
出願人 東京エレクトロン株式会社
代理人 弁理士 須 山 佐 −
第１図FIGS. 1 and 2 are sectional views showing essential parts of a heating furnace according to one embodiment of the present invention, and FIGS. 3 and 4 are sectional views showing heating f of another embodiment. 1... Furnace core tube, 2... Outer tube, 3
... Heater, 4 ... Cylindrical member (substance with good thermal conductivity), 5 ... Heat insulation layer, 6 ...
...Heater case, 7...Wafer boat,
8... Semiconductor wafer. Applicant Tokyo Electron Co., Ltd. Agent Patent Attorney Sasa Suyama - Figure 1
Claims (1)
配置されたヒータとを備えた加熱炉において、前記炉心
管の長手方向に沿って、熱伝導性の良好な物質を配置し
たことを特徴とする加熱炉。(1) In a heating furnace equipped with at least a cylindrical core tube and a heater placed around the core tube, a material with good thermal conductivity is arranged along the longitudinal direction of the core tube. A heating furnace featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63017951A JP2676083B2 (en) | 1988-01-28 | 1988-01-28 | heating furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63017951A JP2676083B2 (en) | 1988-01-28 | 1988-01-28 | heating furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01192113A true JPH01192113A (en) | 1989-08-02 |
| JP2676083B2 JP2676083B2 (en) | 1997-11-12 |
Family
ID=11958071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63017951A Expired - Fee Related JP2676083B2 (en) | 1988-01-28 | 1988-01-28 | heating furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2676083B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003515961A (en) * | 1999-11-30 | 2003-05-07 | ウエファーマスターズ， インコーポレイテッド | Small batch furnace |
| KR20190035857A (en) * | 2016-08-05 | 2019-04-03 | 샌드빅 써멀 프로세스. 인크. | A thermal process device having a non-uniform insulation portion |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925142A (en) * | 1982-07-30 | 1984-02-09 | 松下電工株式会社 | Arc extinguishing device in circuit breaker |
| JPS627693A (en) * | 1985-07-02 | 1987-01-14 | Sumitomo Electric Ind Ltd | Device for growing compound semiconductor single crystal |
| JPS6225428A (en) * | 1985-07-25 | 1987-02-03 | Toshiba Corp | Heater for semiconductor wafer |
-
1988
- 1988-01-28 JP JP63017951A patent/JP2676083B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925142A (en) * | 1982-07-30 | 1984-02-09 | 松下電工株式会社 | Arc extinguishing device in circuit breaker |
| JPS627693A (en) * | 1985-07-02 | 1987-01-14 | Sumitomo Electric Ind Ltd | Device for growing compound semiconductor single crystal |
| JPS6225428A (en) * | 1985-07-25 | 1987-02-03 | Toshiba Corp | Heater for semiconductor wafer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003515961A (en) * | 1999-11-30 | 2003-05-07 | ウエファーマスターズ， インコーポレイテッド | Small batch furnace |
| KR20190035857A (en) * | 2016-08-05 | 2019-04-03 | 샌드빅 써멀 프로세스. 인크. | A thermal process device having a non-uniform insulation portion |
| JP2019531453A (en) * | 2016-08-05 | 2019-10-31 | サンドビック サーマル プロセス，インコーポレイティド | Heat treatment device with non-uniform insulation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2676083B2 (en) | 1997-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |