JP2007110163A

JP2007110163A - Semiconductor processing apparatus and heat treatment device

Info

Publication number: JP2007110163A
Application number: JP2007002790A
Authority: JP
Inventors: Kenji Ono; 健治大野
Original assignee: Hitachi Kokusai Electric Inc
Current assignee: Hitachi Kokusai Electric Inc
Priority date: 2007-01-10
Filing date: 2007-01-10
Publication date: 2007-04-26

Abstract

<P>PROBLEM TO BE SOLVED: To eliminate unevenness in temperature due to a resistance heating element in a reactor to enhance processed quality of a substrate. <P>SOLUTION: This semiconductor processing apparatus is provided with a reaction tube 2 which processes the substrate 6 placed on a substrate holder 7 inside, a cylindrical heat insulator 3 provided so as to surround the reaction tube, and the resistance heating element 4 provided on a inner surface of the cylindrical heat insulator, wherein the resistance heating element is divided into a desired number of partial heating elements 4a, 4b, 4c along an axial of the reaction tube, power supply lines 5a, 5b, 5c are connected to the respective partial heating elements through the cylindrical heat insulator, respectively, and extension portions which extend to the outside of the cylindrical heat insulator are covered with heat insulators 11a, 11b, 11c for power supply line, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明はシリコンウェーハ等半導体ウェーハに酸化膜の生成、不純物の拡散等の処理を行う半導体製造装置及び熱処理装置に関するものである。 The present invention relates to a semiconductor manufacturing apparatus and a heat treatment apparatus for performing processing such as generation of an oxide film and diffusion of impurities on a semiconductor wafer such as a silicon wafer.

シリコンウェーハ等半導体ウェーハに酸化膜の生成、不純物の拡散等の処理を行う熱処理装置として縦型炉を有する縦型熱処理装置がある。 2. Description of the Related Art There is a vertical heat treatment apparatus having a vertical furnace as a heat treatment apparatus that performs processing such as generation of an oxide film and diffusion of impurities on a semiconductor wafer such as a silicon wafer.

図３に於いて、従来の縦型熱処理装置について説明する。 A conventional vertical heat treatment apparatus will be described with reference to FIG.

縦型炉１は有天筒状の反応管２、該反応管２を囲繞する様に設けられた有天筒状の断熱材３、該断熱材３の内面に設けられた抵抗発熱体４を有し、該抵抗発熱体４はゾーンコントロールが可能な様に、前記反応管２の軸心に沿って所要数（図では３分割）の部分発熱体４ａ，４ｂ，４ｃに分割され該各部分発熱体４ａ，４ｂ，４ｃにはそれぞれ電源供給線５ａ，５ｂ，５ｃが接続され、該電源供給線５ａ，５ｂ，５ｃは前記断熱材３を貫通して外部に延出し図示しない電源、電源制御部に接続されている。 The vertical furnace 1 includes a celestial cylindrical reaction tube 2, a celestial cylindrical heat insulating material 3 provided so as to surround the reaction tube 2, and a resistance heating element 4 provided on the inner surface of the heat insulating material 3. The resistance heating element 4 is divided into a required number (in the figure, three divisions) of partial heating elements 4a, 4b, 4c along the axis of the reaction tube 2 so that zone control is possible. The heating elements 4a, 4b, and 4c are connected to power supply lines 5a, 5b, and 5c, respectively, and the power supply lines 5a, 5b, and 5c extend through the heat insulating material 3 and are not shown. Connected to the department.

前記反応管２内には基板保持具、例えばウェーハ６を水平姿勢で多段に保持するボート７が装入される。 In the reaction tube 2, a substrate holder, for example, a boat 7 for holding wafers 6 in a multi-stage in a horizontal posture is inserted.

該ボート７は保温部材８を介して炉口蓋９に載置されており、該炉口蓋９は図示しないボート昇降装置によって支持されている。 The boat 7 is placed on a furnace port lid 9 via a heat retaining member 8, and the furnace port lid 9 is supported by a boat lifting / lowering device (not shown).

前記反応管２内にはウェーハを熱処理する為に必要な反応ガスが導入可能な様にガス供給ライン（図示せず）が接続されていると共に前記反応管２内部を排気する排気ライン（図示せず）が接続されている。 A gas supply line (not shown) is connected in the reaction tube 2 so that a reaction gas necessary for heat-treating the wafer can be introduced, and an exhaust line (not shown) for exhausting the reaction tube 2 is exhausted. Connected).

ウェーハの処理の概略を説明する。ウェーハ６が前記ボート７に装填され、前記ボート昇降装置により前記反応管２内に前記ボート７が装入され、前記炉口蓋９が前記反応管２下端を閉塞する。前記抵抗発熱体４により前記反応管２内が加熱された状態で図示しない排気ラインにより前記反応管２内が排気されると共に図示しないガス供給ラインから反応ガスが導入され、ウェーハに所要の熱処理が成される。 An outline of wafer processing will be described. Wafers 6 are loaded into the boat 7, the boat 7 is loaded into the reaction tube 2 by the boat lifting device, and the furnace lid 9 closes the lower end of the reaction tube 2. While the inside of the reaction tube 2 is heated by the resistance heating element 4, the inside of the reaction tube 2 is exhausted by an exhaust line (not shown) and a reaction gas is introduced from a gas supply line (not shown) so that a required heat treatment is performed on the wafer. Made.

処理が完了すると、前記反応管２から前記ボート７が引出される。 When the processing is completed, the boat 7 is pulled out from the reaction tube 2.

上記熱処理装置の基板の熱処理に於いて、膜厚の生成速度、不純物の拡散速度は基板の加熱温度に大きく影響される。 In the heat treatment of the substrate of the heat treatment apparatus, the film formation rate and the impurity diffusion rate are greatly affected by the heating temperature of the substrate.

従って、上記した様に前記抵抗発熱体４は所要数に分割され、部分発熱体４ａ，４ｂ，４ｃの発熱量がそれぞれ制御されている。例えば上部、下部、特に下部では炉口からの放熱量が大きいので部分発熱体４ｃの発熱量が多くなる様に制御されている。而して、抵抗発熱体４による温度制御により炉内で均熱域が形成される様になっており、該均熱域で製品用のウェーハが熱処理されている。 Therefore, as described above, the resistance heating element 4 is divided into a required number, and the heat generation amounts of the partial heating elements 4a, 4b, and 4c are respectively controlled. For example, in the upper part, the lower part, particularly the lower part, the amount of heat released from the furnace port is large, so that the amount of heat generated by the partial heating element 4c is controlled to increase. Thus, a temperature control region is formed in the furnace by temperature control by the resistance heating element 4, and the product wafer is heat-treated in the heat control region.

上記した様に前記部分発熱体４ａ，４ｂ，４ｃは前記電源供給線５ａ，５ｂ，５ｃを介して図示しない電源部と接続され、前記電源供給線５ａ，５ｂ，５ｃを介して給電される様になっている。前記部分発熱体４ａ，４ｂ，４ｃに給電することで該部分発熱体４ａ，４ｂ，４ｃが発熱し、縦型炉１内を加熱するが、発熱した一部は前記電源供給線５ａ，５ｂ，５ｃに伝達され、該電源供給線５ａ，５ｂ，５ｃを加熱している。該電源供給線５ａ，５ｂ，５ｃは大気に露出しており、該電源供給線５ａ，５ｂ，５ｃが外気と直接熱交換をし、前記部分発熱体４ａ，４ｂ，４ｃの発熱の一部が前記電源供給線５ａ，５ｂ，５ｃを介して外気に放熱されている。 As described above, the partial heating elements 4a, 4b, and 4c are connected to a power supply unit (not shown) through the power supply lines 5a, 5b, and 5c, and are supplied with power through the power supply lines 5a, 5b, and 5c. It has become. By supplying power to the partial heating elements 4a, 4b, and 4c, the partial heating elements 4a, 4b, and 4c generate heat, and heat the interior of the vertical furnace 1, but some of the generated heat is supplied to the power supply lines 5a, 5b, The power supply lines 5a, 5b and 5c are heated. The power supply lines 5a, 5b and 5c are exposed to the atmosphere, and the power supply lines 5a, 5b and 5c exchange heat directly with the outside air, and a part of the heat generated by the partial heating elements 4a, 4b and 4c Heat is radiated to the outside air through the power supply lines 5a, 5b and 5c.

又、該電源供給線５ａ，５ｂ，５ｃからの放熱量は大きく、前記部分発熱体４ａ，４ｂ，４ｃの電源供給線５ａ，５ｂ，５ｃとの接続部が該電源供給線５ａ，５ｂ，５ｃによって冷却されていることとなり、前記部分発熱体４ａ，４ｂ，４ｃの温度が低下するという現象を起している。該部分発熱体４ａ，４ｂ，４ｃの温度斑はウェーハの加熱状態にも影響し、ウェーハの面内温度分布の不均一を発生させ、処理後のウェーハの品質を低下させる要因となっている。 Further, the amount of heat radiation from the power supply lines 5a, 5b, 5c is large, and the connection portions of the partial heating elements 4a, 4b, 4c with the power supply lines 5a, 5b, 5c are the power supply lines 5a, 5b, 5c. As a result, the temperature of the partial heating elements 4a, 4b, 4c is lowered. The temperature unevenness of the partial heating elements 4a, 4b, and 4c also affects the heating state of the wafer, causing non-uniform temperature distribution in the wafer surface and causing the quality of the processed wafer to deteriorate.

本発明は斯かる実情に鑑み、抵抗発熱体の温度斑を解消し、ウェーハの処理品質の向上を図るものである。 In view of such circumstances, the present invention eliminates temperature spots of the resistance heating element and improves the processing quality of the wafer.

本発明は、基板保持具に載置された基板を内部で処理する反応管と、該反応管を囲繞する様に設けられた筒状断熱材と、該筒状断熱材の内面に設けられた抵抗発熱体とを具備し、該抵抗発熱体は前記反応管の軸心に沿って所要数の部分発熱体に分割され、該各部分発熱体にはそれぞれ電源供給線が前記筒状断熱材を貫通して接続され、該筒状断熱材の外側に延出する延出部をそれぞれ電源供給線用断熱材で覆った半導体製造装置に係るものである。 The present invention provides a reaction tube for internally processing a substrate placed on a substrate holder, a cylindrical heat insulating material provided so as to surround the reaction tube, and an inner surface of the cylindrical heat insulating material. A resistance heating element, and the resistance heating element is divided into a required number of partial heating elements along the axial center of the reaction tube, and a power supply line for each of the partial heating elements is provided with the cylindrical heat insulating material. The present invention relates to a semiconductor manufacturing apparatus in which extending portions connected through and extending to the outside of the cylindrical heat insulating material are each covered with a heat insulating material for a power supply line.

又本発明は、筒状断熱材と、該筒状断熱材の内面に設けられた抵抗発熱体とを具備し、該抵抗発熱体は反応管の軸心に沿って所要数の部分発熱体に分割され、該各部分発熱体にはそれぞれ電源供給線が前記筒状断熱材を貫通して接続され、該筒状断熱材の外側に延出する延出部をそれぞれ電源供給線用断熱材で覆った熱処理装置に係るものである。 The present invention also includes a cylindrical heat insulating material and a resistance heating element provided on the inner surface of the cylindrical heat insulating material, the resistance heating element being formed into a required number of partial heating elements along the axis of the reaction tube. Each of the partial heating elements is divided, and a power supply line is connected to each of the partial heat generators through the cylindrical heat insulating material. This relates to a covered heat treatment apparatus.

本発明によれば、被処理基板を処理する為の反応室を画成する反応管と、該反応管の周囲に設けられた断熱材と、該断熱材と反応管との間に設けられた抵抗発熱体と該抵抗発熱体に接続される電源供給線とを具備し、前記抵抗発熱体からの発熱が前記電源供給線より放熱されることを抑制する様にしたので、抵抗発熱体の電源供給線との接続箇所からの放熱量が抑制され、抵抗発熱体の温度斑がなくなり、基板の高品質の処理が可能となるという優れた効果を発揮する。 According to the present invention, a reaction tube defining a reaction chamber for processing a substrate to be processed, a heat insulating material provided around the reaction tube, and provided between the heat insulating material and the reaction tube. A resistance heating element and a power supply line connected to the resistance heating element are provided to suppress heat generated from the resistance heating element from being radiated from the power supply line. The amount of heat released from the connection point with the supply line is suppressed, the temperature variation of the resistance heating element is eliminated, and an excellent effect that high-quality processing of the substrate becomes possible is exhibited.

以下、図面を参照しつつ本発明の実施の形態を説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１、図２に於いて、図３中で示したものと同等のものには同符号を付し、詳細については説明を省略する。 1 and 2, the same components as those shown in FIG. 3 are denoted by the same reference numerals, and description thereof will be omitted for details.

縦型炉１は有天筒状の反応管２、該反応管２と同心に設けられた有天筒状の断熱材３、該断熱材３の内面に設けられた抵抗発熱体４とを有し、該抵抗発熱体４は前記反応管２の軸心に沿って所要数（図では３分割）の部分発熱体４ａ，４ｂ，４ｃに分割され該各部分発熱体４ａ，４ｂ，４ｃにはそれぞれ電源供給線５ａ，５ｂ，５ｃが接続され、該電源供給線５ａ，５ｂ，５ｃは前記断熱材３を貫通して外部に延出し図示しない電源、電源制御部に接続されている。 The vertical furnace 1 has a celestial cylindrical reaction tube 2, a celestial cylindrical heat insulating material 3 provided concentrically with the reaction tube 2, and a resistance heating element 4 provided on the inner surface of the heat insulating material 3. The resistance heating element 4 is divided into a required number (in the figure, three divisions) of partial heating elements 4a, 4b, 4c along the axis of the reaction tube 2, and each of the partial heating elements 4a, 4b, 4c The power supply lines 5a, 5b, and 5c are connected to each other. The power supply lines 5a, 5b, and 5c extend through the heat insulating material 3 to the outside and are connected to a power source and a power control unit (not shown).

前記電源供給線５ａ，５ｂ，５ｃの前記断熱材３より延出する所要長を断熱材１１ａ，１１ｂ，１１ｃにより覆う。 The required lengths of the power supply lines 5a, 5b, 5c extending from the heat insulating material 3 are covered with the heat insulating materials 11a, 11b, 11c.

前記反応管２内には基板保持具、例えばウェーハ６を水平姿勢で多段に保持するボート７が図示しないボート昇降装置により装入され、前記部分発熱体４ａ，４ｂ，４ｃにより前記ウェーハ６が加熱され、又反応ガスが導入されて所要の熱処理が成される。 A substrate holder, for example, a boat 7 for holding the wafers 6 in a multi-stage in a horizontal posture is inserted into the reaction tube 2 by a boat elevating device (not shown), and the wafers 6 are heated by the partial heating elements 4a, 4b, 4c. In addition, the reaction gas is introduced and the required heat treatment is performed.

上記部分発熱体４ａ，４ｂ，４ｃを給電発熱させた場合、前記電源供給線５ａ，５ｂ，５ｃの延出部所要長さが前記断熱材１１ａ，１１ｂ，１１ｃにより覆われているので、前記電源供給線５ａ，５ｂ，５ｃが加熱されたとしても外気との間で直接熱交換することがなく、該電源供給線５ａ，５ｂ，５ｃからの放熱が抑制される。この為、該電源供給線５ａ，５ｂ，５ｃと前記部分発熱体４ａ，４ｂ，４ｃとの接続部、及びその周辺が前記電源供給線５ａ，５ｂ，５ｃから外気への放熱により冷却されることが抑制され、前記部分発熱体４ａ，４ｂ，４ｃの温度斑の発生が防止される。而して、前記部分発熱体４ａ，４ｂ，４ｃの加熱状態の均一化が図れ、前記ウェーハ６の処理品質が向上する。 When the partial heating elements 4a, 4b, 4c are fed and heated, the required lengths of the extended portions of the power supply lines 5a, 5b, 5c are covered with the heat insulating materials 11a, 11b, 11c. Even if the supply lines 5a, 5b, 5c are heated, heat is not directly exchanged with the outside air, and heat radiation from the power supply lines 5a, 5b, 5c is suppressed. For this reason, the connection part between the power supply lines 5a, 5b, 5c and the partial heating elements 4a, 4b, 4c and its periphery are cooled by heat radiation from the power supply lines 5a, 5b, 5c to the outside air. And the occurrence of temperature spots on the partial heating elements 4a, 4b, 4c is prevented. Thus, the heating state of the partial heating elements 4a, 4b and 4c can be made uniform, and the processing quality of the wafer 6 is improved.

尚、前記電源供給線５ａ，５ｂ，５ｃは良導電体材料であるが、抵抗はあるので大電流を流すことで、該電源供給線５ａ，５ｂ，５ｃ自体が発熱する。従って、前記電源供給線５ａ，５ｂ，５ｃが過剰に高温とならない様に、前記断熱材１１ａ，１１ｂ，１１ｃの長さ、被覆の厚みについては適宜調整をする。 The power supply lines 5a, 5b, and 5c are made of a good conductor material. However, since they have resistance, the power supply lines 5a, 5b, and 5c themselves generate heat when a large current flows. Accordingly, the lengths of the heat insulating materials 11a, 11b, and 11c and the thickness of the covering are appropriately adjusted so that the power supply lines 5a, 5b, and 5c do not become excessively high in temperature.

尚、本発明は部分発熱体４ａ，４ｂ，４ｃの電源供給線５ａ，５ｂ，５ｃとの接続箇所の温度降下が縦型炉１内部の加熱状態に影響を及さない様にするものであり、従って接続部の温度低下を防止する手段としては上記実施の形態に限られるものではない。 In the present invention, the temperature drop at the location where the partial heating elements 4a, 4b, 4c are connected to the power supply lines 5a, 5b, 5c does not affect the heating state inside the vertical furnace 1. Therefore, the means for preventing the temperature drop of the connecting portion is not limited to the above embodiment.

例えば、前記部分発熱体４ａ，４ｂ，４ｃと電源供給線５ａ，５ｂ，５ｃとの接続箇所を電源側に移動する。即ち、前記部分発熱体４ａ，４ｂ，４ｃの接続端を電源側に延長して導入部を形成し、接続箇所を前記断熱材３の内部、或は導入部を断熱材３に対し貫通させ断熱材３の外で電源供給線と接続する。前記部分発熱体４ａ，４ｂ，４ｃに導入部を形成することで、導入部の発熱が前記電源供給線５ａ，５ｂ，５ｃから放熱量を補充し、該電源供給線５ａ，５ｂ，５ｃによる冷却効果が縦型炉１内部に影響を及さない様にする。この場合、前記断熱材１１ａ，１１ｂ，１１ｃは省略することも可能である。 For example, the connection location between the partial heating elements 4a, 4b, 4c and the power supply lines 5a, 5b, 5c is moved to the power supply side. That is, the connection ends of the partial heating elements 4a, 4b, and 4c are extended to the power source side to form an introduction portion, and the connection portion penetrates the inside of the heat insulating material 3 or the introduction portion penetrates the heat insulating material 3. The power supply line is connected outside the material 3. By forming the introduction part in the partial heating elements 4a, 4b, 4c, the heat generated in the introduction part supplements the heat radiation amount from the power supply lines 5a, 5b, 5c, and is cooled by the power supply lines 5a, 5b, 5c. The effect is prevented from affecting the inside of the vertical furnace 1. In this case, the heat insulating materials 11a, 11b, and 11c can be omitted.

本発明の実施の形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment of this invention. 図１のＡ−Ａ矢視図である。It is an AA arrow line view of FIG. 従来例を示す概略断面図である。It is a schematic sectional drawing which shows a prior art example.

符号の説明Explanation of symbols

１縦型炉
２反応管
３断熱材
４抵抗発熱体
５電源供給線
６ウェーハ
７ボート
１１断熱材 DESCRIPTION OF SYMBOLS 1 Vertical furnace 2 Reaction tube 3 Heat insulating material 4 Resistance heating element 5 Power supply line 6 Wafer 7 Boat 11 Heat insulating material

Claims

基板保持具に載置された基板を内部で処理する反応管と、該反応管を囲繞する様に設けられた筒状断熱材と、該筒状断熱材の内面に設けられた抵抗発熱体とを具備し、該抵抗発熱体は前記反応管の軸心に沿って所要数の部分発熱体に分割され、該各部分発熱体にはそれぞれ電源供給線が前記筒状断熱材を貫通して接続され、該筒状断熱材の外側に延出する延出部をそれぞれ電源供給線用断熱材で覆ったことを特徴とする半導体製造装置。 A reaction tube for internally processing a substrate placed on a substrate holder, a cylindrical heat insulating material provided so as to surround the reaction tube, and a resistance heating element provided on an inner surface of the cylindrical heat insulating material; The resistance heating element is divided into a required number of partial heating elements along the axis of the reaction tube, and a power supply line is connected to each of the partial heating elements through the cylindrical heat insulating material. A semiconductor manufacturing apparatus, wherein each of the extending portions extending to the outside of the cylindrical heat insulating material is covered with a heat insulating material for a power supply line.

筒状断熱材と、該筒状断熱材の内面に設けられた抵抗発熱体とを具備し、該抵抗発熱体は反応管の軸心に沿って所要数の部分発熱体に分割され、該各部分発熱体にはそれぞれ電源供給線が前記筒状断熱材を貫通して接続され、該筒状断熱材の外側に延出する延出部をそれぞれ電源供給線用断熱材で覆ったことを特徴とする熱処理装置。 A cylindrical heat insulating material and a resistance heating element provided on the inner surface of the cylindrical heat insulating material, the resistance heating element being divided into a required number of partial heating elements along the axis of the reaction tube, A power supply line is connected to each of the partial heating elements through the cylindrical heat insulating material, and an extending portion extending outside the cylindrical heat insulating material is covered with a heat insulating material for the power supply line. Heat treatment equipment.