JPH0469937A - Semiconductor substrate and manufacture thereof - Google Patents
Semiconductor substrate and manufacture thereofInfo
- Publication number
- JPH0469937A JPH0469937A JP18364290A JP18364290A JPH0469937A JP H0469937 A JPH0469937 A JP H0469937A JP 18364290 A JP18364290 A JP 18364290A JP 18364290 A JP18364290 A JP 18364290A JP H0469937 A JPH0469937 A JP H0469937A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- oxygen
- substrate
- semiconductor substrate
- stacking faults
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000001301 oxygen Substances 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 238000005247 gettering Methods 0.000 abstract description 14
- 239000010453 quartz Substances 0.000 abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000002244 precipitate Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
Ｌ！上座且亘ユＩ
本発明は半導体基板及びその製造方法に関し、より詳し
くはＬＳＩ等の基板として用いられる単結晶Ｓｉの半導
体基板及びその製造方法に関する。[Detailed Description of the Invention] L! FIELD OF THE INVENTION The present invention relates to a semiconductor substrate and a method for manufacturing the same, and more particularly to a single crystal Si semiconductor substrate used as a substrate for LSI and the like and a method for manufacturing the same.
碩未Ω肢迷
Ｓｉ結晶中の酸素の固滴度は、ＬＳＩ製造時における代
表的な熱処理温度である１ ０００°Ｃのとき、約３
Ｘ １０ Ｉ？ａｔｏｍｓ／ｃｍ” ”Ｃある。、＝ｔ
−ｕ：対し、現在ＬＳＩの半導体基板として用いられる
単結晶Ｓｉ基板内には、ＣＺ （Ｃｚｏｃｈｒａｌｓｋ
ｉｌ法に起因して約１０ ”ａｔｏｍｓ／ｃｍ”の酸素
不純物が含有されている。従って、この単結晶３１基板
内に含まれる酸素は常に過飽和状態となっているため、
ＬＳＩ製造のための熱処理ではＳｉ基板内で酸素が析出
し、５ＩＯＸという構造に変化する。酸素が析出してＳ
ｉＯｘに変化すると、体積膨張によりパンチアウト転位
や積層欠陥等の微小欠陥が発生する。特にこれらの微小
欠陥がＳｉ基板表面から数μｍのＬＳＩ素子の活性領域
に存在すると、酸化膜耐圧、リーク電流等に悪影響を及
ぼし、ＬＳＩにとって有害となる。The solid droplet density of oxygen in the Si crystal is approximately 3 at 1000°C, which is a typical heat treatment temperature during LSI manufacturing.
X 10 I? atoms/cm” “C”. ,=t
-u: On the other hand, CZ (Czochralsk
Due to the il method, approximately 10 ``atoms/cm'' of oxygen impurities are contained. Therefore, since the oxygen contained within this single crystal 31 substrate is always in a supersaturated state,
During heat treatment for LSI manufacturing, oxygen precipitates within the Si substrate, changing the structure to 5IOX. Oxygen precipitates and S
When it changes to iOx, micro defects such as punch-out dislocations and stacking faults occur due to volume expansion. In particular, if these minute defects exist in the active region of an LSI device several micrometers from the surface of the Si substrate, they will adversely affect the oxide film breakdown voltage, leakage current, etc., and be harmful to the LSI.
しかしながらＳｉ基板において、これらの微小欠陥が表
面から十分離れた内部にのみ発生すれば、重金属等の汚
染物質を吸着して素子の活性領域から除去する、いわゆ
るゲッタリング作用が働き、高品位のＬＳＩを製造する
上で有用となる。However, if these micro-defects occur only in the interior of the Si substrate, which is far enough away from the surface, a so-called gettering effect takes place, which adsorbs contaminants such as heavy metals and removes them from the active region of the device, resulting in a high-quality LSI. It is useful in manufacturing.
そこで一般に、Ｓｉ基桧の表面に無欠陥層（Ｄｅｎｕｄ
ｅｄ Ｚｏｎｅ： ０２層）、ＳＬ基板内部１．−欠陥
層（ＩｎｔｒｉｎｓｉｃＧｃｖｔｔ、ｅｒｉｎｒＸ：Ｉ
Ｇ層）を作る処理か行なわれている。具体的（、コは例
えば、８１基様を窒素雰囲気中で４時間稈熱処理シ１．
、Ｓ１基板表由１付近Ｑ）酸素を外力拡散させる１“、
と１．゛よ）で表面イー・１近の酸−本濃度を低トさ１
１１、次いで窒素１囲’Ａ”４“−４時間程度の熱処理
をＩ”Ｙなって、基板内部に酸素析出物苓生成さセる。Therefore, in general, a defect-free layer (Denud
ed Zone: 02 layer), SL board interior 1. - Defect layer (IntrinsicGcvtt, erinrX:I
G layer) is being created. Specifically, for example, 81 plants were subjected to culm heat treatment for 4 hours in a nitrogen atmosphere.
, near S1 substrate surface 1 Q) External force diffusion of oxygen 1",
and 1. (2) to lower the concentration of acid near the surface 1.
11. Next, heat treatment is performed for about 4 hours under nitrogen to form oxygen precipitates inside the substrate.
そして′、このＳ１μ板を酸素雰１ｊｌ１１．ｌ気中で
１．６時間程度熱処理−けることにより、酸素析出物か
ら転位ループ等の欠陥を発生させるという処理が行なわ
れでいる。Then, this S1μ plate was placed in an oxygen atmosphere. A process in which defects such as dislocation loops are generated from oxygen precipitates by heat treatment in l air for about 1.6 hours has not been carried out.
発見」す菌迭旦−よう考４（１１
しかしながら、Ｓｉ基板のゲッタリング能力は、３１基
板内部：４．゛刑成さ才また酸素析出物の形態に大きく
依存し、でいる。七ｔ［は、酸素析出物の形態に、↓、
り微小欠陥を発生させるものとイうてないものとが存在
し、またバンチアラ］・転位を発′ｌ−Ｌや４゛いもの
と積層欠陥を発生しやすいものとが存在することに依っ
ている。However, the gettering ability of a Si substrate is highly dependent on the form of oxygen precipitates inside the substrate. is the form of oxygen precipitates, ↓,
There are those that generate micro defects and those that do not, and there are those that easily generate stacking faults and those that generate clusters, dislocations, and dislocations. There is.
こ１１らのうち、積層欠陥（」仝分なＳｌ ｆＭＱ子の
１浴から成り、重金属原子を引き化′せるの（、゛靜イ
郊１１Ｊ１東のある歪み場を形成４るため、高いゲッタ
リング能力４有４るＳ１都板を得る１−で有効（“’
Ｅ−＞る２、従＝）で重金属の）′Ｉ５賛１゛函・↑え
、高品乍−の１−５ε：Ｔを′！Ａ：造−４るのにＲ適
な８１基板とり”るｌ′−めには、内部：：積Ｉｔ１欠
１１１ｒ潜イを在さセることか１要・−・課題Ｊ−ん゛
る。Among these 11, stacking faults ("consisting of one bath of insufficient Sl fMQ elements") are used to detract heavy metal atoms ("), forming a certain strain field, resulting in a high getter. Effective with 1- to obtain S1 Miyako board with 4 ring abilities (“'
E->ru 2, follow =) of heavy metals)'I5 praise 1゛box・↑E, high quality 1-5ε:T'! A: In order to take an R-suitable 81 board for construction, it is necessary to have an internal :: product It1 missing 111r hidden board. .
本発明は上記しまた課題に鑑みな４されたもの一、結り
、Ｊ１常）、二°高いブックリンク゛能ノリをイー１１
１２、高品質０月、５１を製造することかびきる゛ｒ２
Ｊ１体基根乃こ、ドその製造ツノ法を提供りることを［
−１的ど［，２ている。The present invention has been developed in view of the above-mentioned problems.
12. Producing high quality 0.51 ゛r2
We would like to provide a method for producing J1 bodies.
-1 target [,2.
課題を解決゛づる為の手段
」ｇ［Ｙ Ｌだ目的を達成するために本発明に係る半導
体基板は、酸素を包む半導体基板（こおいＣ，該半導体
基板の表向からほぼ５０ ツノ、 ｍ〜・ｌ ＯＯＨ，
、ｒ、 ｍの範囲に積層欠陥を１０７個／ｃｍ’−川０
″個／ＣＩＦ’密用で含有しでいることを特徴とＪる。In order to achieve the object, the semiconductor substrate according to the present invention is a semiconductor substrate (approximately 50 mm from the surface of the semiconductor substrate) that surrounds oxygen. ~・l OOH,
, r, 107 stacking faults/cm' - river 0
It is characterized by secretly containing CIF/CIF.
また半導体基板の製造方法（７おいで、酸素をさむ半導
イネ基板を還元ガス雰囲気中、約１０００ ℃で加熱し
て一基板表面の酸素を外方拡散さセ、この後８００°０
へ・８５０°にの温度雰囲で熱処理・Ｊることを特徴と
している。In addition, a semiconductor substrate manufacturing method (Step 7) heats a semiconductor rice substrate sandwiching oxygen at about 1000°C in a reducing gas atmosphere to diffuse oxygen on the surface of one substrate outward;
It is characterized by heat treatment in an atmosphere at a temperature of 850°.
１里
上記した半導体基板によれば、半導体基板の表面からほ
ぼ５０ ＩＬｍ〜１００ ｇ ｍの１囲に積層欠陥を１
（］］７個／ｃｍ３−１０ ’個／” Ｃｍ ３の音度
でり有［２でいるので、半導体基板内部には重金属を引
き寄セるのに最も効果のある歪み場が形成さね、半導体
基板は高いゲッタリング能力をイ］“することとなるる
６
また上記した半導体基板の製造方法によれば、酸素を含
む半導体基板を還元ガス雰囲気中、約１０００℃で加熱
して基板表面の酸素を外方拡散させ、この後８００℃〜
８Ｆ５０°Ｃの温度範囲Ｘ′熱処理することにより、次
の熱処理丁稈ズ゛積層欠陥を発生ずることとなる、結晶
構造を有しまたブｌ、・ト状のクリストバライトＳｊＯ
□が半導体基板内部（、、：析出する６従って、高いゲ
ッタリング能力をイイ′１−る半導体基板が製造される
こととなる。According to the semiconductor substrate described above, one stacking fault is formed in an area approximately 50 ILm to 100 gm from the surface of the semiconductor substrate.
(]] 7 pieces/cm3-10 'pieces/'' Since the sound intensity of Cm3 is 2, the most effective strain field for attracting heavy metals is formed inside the semiconductor substrate. , the semiconductor substrate has a high gettering ability.6 Also, according to the method for manufacturing a semiconductor substrate described above, a semiconductor substrate containing oxygen is heated at about 1000° C. in a reducing gas atmosphere to improve the surface of the substrate. of oxygen is diffused outward, and then heated to 800℃~
By heat-treating in the temperature range
□ is deposited inside the semiconductor substrate (6). Therefore, a semiconductor substrate with high gettering ability is manufactured.
支施当
以］・、本発明に係る半導体Ｒ析及びイの製造方法の実
施例を図面に基−づいＣ説明する。１第１図は本発明に
係る半導体基板の製造方法を模式的に示したグラフ’ｒ
、ｂす、第２区は本発明（、ニー係る半導体基板の製造
方法の−に程を模式的（５′７示した石英ボルトど熱処
理炉の斜視［メ［である。第：）図中１０は熱処理炉を
示Ｌ５°ごＪ−リ、ｌｐ′ｉｊ処理炉コ０には、後述４
る石英ボ＝１・１２を挿入復−るｔ二めの石英ｆｊ・−
ブ１１が内蔵さ、ｆ′１ている。この石φＡ。Embodiments of the semiconductor R analysis and manufacturing method according to the present invention will be described based on the drawings. 1 FIG. 1 is a graph schematically showing the method for manufacturing a semiconductor substrate according to the present invention.
The second section is a perspective view of a heat treatment furnace for quartz bolts shown at 5'7, which schematically shows the process of manufacturing a semiconductor substrate according to the present invention. 10 indicates a heat treatment furnace.
Insert and return the quartz ball = 1.12.Second quartz fj.-
There is a built-in block 11, f'1. This stone φA.
７−ブ１１内の温度分布（１人「ｊ、中央部、出［−］
でほぼ一定どなって５５つ、熱処理炉１０内の雰囲気は
窒素等の不活性ガスあるいは酸素のい４′れかに切り賛
えられるようにな・−〕ている。7-Temperature distribution inside Bu 11 (1 person "j, center, out [-]
At almost constant intervals, the atmosphere inside the heat treatment furnace 10 is made up of either an inert gas such as nitrogen or oxygen.
単結晶インゴットをスライスして得た半導体基板、例え
ばＳ】基板】３に熱処理を施ず揚台は、まず第２図に示
した如＜Ｓｉ基板１３を石英ボー １・１２に載置し、
この石英ボ〜！・１２を上配し７た熱処理炉１０の石英
チューブ１１内に５ ｃｍ／ｍｉｎの速度で送り込む。A semiconductor substrate obtained by slicing a single crystal ingot, for example, a Si substrate 13, is placed on a quartz board 1 and 12, as shown in FIG.
This quartz ball!・Feed the tube at a speed of 5 cm/min into the quartz tube 11 of the heat treatment furnace 10, which has a tube 7 placed above it.
次いで第１図に小したように、石英チューブ］１内でＳ
ｉ基板１３を窒素雰囲気中、１１００℃の温度で４時間
加熱し、表面付近の酸素を外方拡散させて表面付近の酸
素濃度を低下させた後、同じく窒素雰囲気中、８００〜
８５０°Ｃの温度範囲で４時間熱処理し、Ｓｉ基板１３
内部にクリストバライトＳｉＯ□を析出させる。そして
さらに石英チューブ１１内を酸素雰囲気とし、３１基板
１３を１０００°Ｃの温度て１６時間熱処理すると、第
３図の写真に示した如く、写真中央のクリストバライト
ＳｉＯ□から積層欠陥が発生し、このような積層欠陥が
３１基板１３の表面からほぼ５０μｍ〜００μｍの範囲
に１０’個／ｃｍ３〜１０’個／ｃｍ３の密度で発生す
る。このとき、Ｓｉ基板１３表面からの積層欠陥の密度
分布は第４図に示したようになり、表面から５０ＬＬｍ
付近で１０９個／ｃｍ”、ｌｏＯｕｍ付近でｌＯ？個／
ｃｍ３となる。Then, as shown in FIG.
The i-substrate 13 was heated at a temperature of 1100° C. for 4 hours in a nitrogen atmosphere to diffuse oxygen near the surface outward to reduce the oxygen concentration near the surface, and then heated at a temperature of 800° C. in the same nitrogen atmosphere.
After heat treatment in a temperature range of 850°C for 4 hours, the Si substrate 13
Cristobalite SiO□ is precipitated inside. Further, when the inside of the quartz tube 11 is made into an oxygen atmosphere and the 31 substrate 13 is heat-treated at a temperature of 1000°C for 16 hours, stacking faults are generated from the cristobalite SiO□ in the center of the photograph, as shown in the photograph of FIG. Such stacking faults occur in a range of approximately 50 μm to 00 μm from the surface of the 31 substrate 13 at a density of 10′/cm 3 to 10′/cm 3 . At this time, the density distribution of stacking faults from the surface of the Si substrate 13 becomes as shown in FIG.
109 pieces/cm” near loOum, lO? pieces/cm near loOum
cm3.
最後に、熱処理後のＳｉ基板１３を熱処理炉１０の石英
チューブ１１より５０ｍ／ｍｉｎの速度で取り出すこと
により、高いブックリング能力を有する３１基板１３を
得ることができる。Finally, by taking out the heat-treated Si substrate 13 from the quartz tube 11 of the heat treatment furnace 10 at a speed of 50 m/min, a 31 substrate 13 having a high bookling ability can be obtained.
第５図及び第６図はそれぞれ酸素析出物生成温度を７０
０°Ｃ及び９００℃としたときの、Ｓｉ基板表面から５
０μｍ付近に生成する酸素析出物及びそれから発生する
欠陥のＴＥＭ （透過型電子顕微鏡）写真である。第５
図に示した如く、８１基板を７００’Ｃで酸素析出熱処
理すると、転位ループを伴ったアモルファス球状析出物
が生成し、第６図に示した如く９００℃で酸素析出熱処
理を施すと、正八面体構造を有し、欠陥を伴わない安定
なアモルファスの析出物が生成する。いずれの場合にも
積層欠陥は発生せず、８００〜８５０ ’Ｃの温度範囲
以外での酸素析出熱処理では、高いゲッタリング能力を
有する８１基板が得られていないことがわかる。Figures 5 and 6 show the oxygen precipitate formation temperature at 70°C.
5 from the Si substrate surface at 0°C and 900°C
This is a TEM (transmission electron microscope) photograph of oxygen precipitates formed around 0 μm and defects generated therefrom. Fifth
As shown in the figure, when the 81 substrate is heat-treated for oxygen precipitation at 700'C, amorphous spherical precipitates with dislocation loops are formed, and when heat-treated for oxygen precipitation at 900°C as shown in Figure 6, regular octahedral precipitates are formed. A stable amorphous precipitate with a structure and no defects is formed. It can be seen that stacking faults did not occur in any case, and an 81 substrate with high gettering ability was not obtained by oxygen precipitation heat treatment outside the temperature range of 800 to 850'C.
次に、酸素析出物生成温度と３１基板表面の欠陥密度と
の関係を調べた結果を第７図に示す。３１基板表面の欠
陥密度の測定は、本実施例に係る方法により内部に１０
７個／ｃｍ３〜１０９個／ｃｍ３程度の積層欠陥を発生
させたＳｉ基板に、表面からＣｕを拡散させ、さらに１
０００℃の温度で１時間の熱処理を施した後、Ｓｉ基板
表面をエツチングして行なった。また比較例として、７
００℃、７５０’Ｃ１９００℃の各酸素析出熱処理によ
り得られた、内部に積層欠陥を含まないＳｉ基板につい
ても同様にして表面の欠陥密度の測定を行なった。ここ
で、Ｓｉ基板表面付近に存在する欠陥はＣｕに起因して
発生するため、この欠陥密度はゲッタリング能力を示し
ていることになる。Next, FIG. 7 shows the results of investigating the relationship between the oxygen precipitate formation temperature and the defect density on the surface of the 31 substrate. 31 The defect density on the substrate surface was measured using the method according to this example.
Cu is diffused from the surface of the Si substrate in which stacking faults of about 7 to 109 stacking faults/cm3 have occurred, and then 1
After heat treatment was performed at a temperature of 1,000° C. for 1 hour, the surface of the Si substrate was etched. Also, as a comparative example, 7
The surface defect density was similarly measured for Si substrates containing no stacking faults inside, which were obtained by oxygen precipitation heat treatment at 00°C, 750°C, and 1900°C. Here, since the defects existing near the surface of the Si substrate are caused by Cu, this defect density indicates the gettering ability.
第７図から明らかなように、本実施例に係る方法により
製造された３１基板は、８００〜８５０°Ｃの温度範囲
以外で製造された３１基板に比べて、Ｃｕに起因する欠
陥密度が非常に低（、強いゲッタリング作用が働いたこ
とがわかる。従って、本実施例方法により製造されたＳ
ｉ基板は高品質のＬＳＩを製造するための基板として非
常に有用であるといえる。As is clear from FIG. 7, the 31 substrate manufactured by the method according to this example has a much higher defect density due to Cu than the 31 substrate manufactured outside the temperature range of 800 to 850°C. It can be seen that a strong gettering effect worked on the S produced by the method of this example.
It can be said that the i-substrate is extremely useful as a substrate for manufacturing high-quality LSIs.
次に、熱処理の最後の工程である１０００°Ｃでの熱処
理時間を種々変えて、Ｓｉ基板内部に発生する積層欠陥
の密度を変化させた各３１基板の格子間酸素濃度を測定
した。その結果を第８図に示す。Next, the interstitial oxygen concentration of each of the 31 substrates was measured by changing the heat treatment time at 1000° C., which is the final step of the heat treatment, to change the density of stacking faults generated inside the Si substrate. The results are shown in FIG.
第８図から明らかなように、積層欠陥密度が１０１０個
／ｃｍ３以上になると格子間酸素濃度は大幅に減少して
いることがわかる。格子間に存在する酸素はＳｉ基板の
強度を増加させる作用を有しており、格子間酸素濃度が
大幅に減少するＩＱＩＯ個／ｃｍ３以上の積層欠陥密度
では、８１基板の強度が弱く実用に向かない。一方、積
層欠陥密度が小さくなるほどゲッタリング能力は低下す
る。As is clear from FIG. 8, when the stacking fault density becomes 1010/cm3 or more, the interstitial oxygen concentration decreases significantly. The interstitial oxygen has the effect of increasing the strength of the Si substrate, and at stacking fault densities of IQIO/cm3 or higher, where the interstitial oxygen concentration decreases significantly, the strength of the 81 substrate is too weak to be suitable for practical use. It's fleeting. On the other hand, the smaller the stacking fault density, the lower the gettering ability.
以上のことから、表面がらほぼ５０μｍ〜１１００ｕの
範囲に１０’個／ｃｍ３〜１０９個／ｃｍ３の密度の積
層欠陥を含有する本実施例に係る半導体基板は、高いゲ
ッタリング能力を有すると共に、十分な強度を有してい
ることがわかる。From the above, the semiconductor substrate according to this example, which contains stacking faults with a density of 10' pieces/cm3 to 109 pieces/cm3 in the range of approximately 50 μm to 1100 μm on the surface, has high gettering ability and sufficient It can be seen that it has a strong strength.
及五Ω盈呈
以上の説明により明らかなように１本発明に係る半導体
基板にあっては、半導体基板の表面がらほぼ５０μｍ＝
１ｏＯμｍの範囲に積層欠陥を１０７個／ｃｍ”〜１０
’個／ｃｍ”の密度で含有しているので、高いゲッタリ
ング能力を有することとなる。従ってＬＳＩ製造のため
の熱処理では、半導体基板の表面に付着した重金属等の
汚染物質を素子の活性領域から除去４るゲッタリング作
用が強く働き、高品質のり、、 Ｓ Ｉを歩留まり良く
製造づることかできる。As is clear from the above explanation, in the semiconductor substrate according to the present invention, the surface of the semiconductor substrate is approximately 50 μm=
Stacking faults in the range of 1oOμm 107/cm”~10
It has a high gettering ability because it is contained at a density of ``pieces/cm''.Therefore, in heat treatment for LSI manufacturing, contaminants such as heavy metals attached to the surface of the semiconductor substrate are removed from the active area of the device. The gettering effect of removal from the film works strongly, making it possible to produce high-quality glue and SI with good yield.
また本発明に係る半導体基板の製造方法ｓｒ： 、Ｊニ
オ）ば、酸素を含む半導体基板な環７Ｔニガノ、雰囲気
中、約１０００ ’Ｃ，で加熱し、で基板２５面の酸褥
；を外方”拡散さセ、この後８００℃−＝ ８５０ ’
（二′、の清Ａ度１１」凹こ′熱処理Ｊるので、積層欠
陥を発！ｔさセ゛るクリストバライト５１０２をオハ出
させるζどがＣぎる。従）で、高いゲッタリング能力を
持−′つ半導体基板を製造することができるゆIn addition, the method for manufacturing a semiconductor substrate according to the present invention is to heat a semiconductor substrate containing oxygen at about 1000'C in an atmosphere, and remove the acid solution from the 25th surface of the substrate. After that, 800℃-=850'
(2', cleanliness of A 11" heat treatment) causes stacking faults! It is too difficult to release cristobalite 5102. It has high gettering ability. ' A space that can manufacture two semiconductor substrates.
第１図は本発明に係る牢−導体基板の製造方’Ｊ’ＪＩ
の工程を模式的に示し２だグラフ、第２図は本発明に係
る半導体基板の製造方法の一工程を説明するために使用
される装置を模式的（Ｊ゛示した斜視図、第３図は本発
明に係る半導体基板内部の積層欠陥のＴＥＭ写真、節４
図は本発明に係る半導体基板内部の積層欠陥の表面から
の密度労作なイ、したグ・）ノ、第５図は７００°Ｃ：
で崖導体基板内部に生成し７た酸素析出物及び転イＱル
ブの”’ｒ １１１ ％ｉ ”ＩＩ’； ｐ、第６図
は９００℃で゛４′：導体基板内部（５゛ト４，１コ繋
（２ｊ・酸素析出物のＴ Ｅ ｈ、・１写兵、第７図（
Ｊ酸＋４析出物ム１成温度と表−面欠陥密度どの関係を
示ジノ・グＸ７）、第ε旧メ１は積層欠陥密度ど絡Ｊ′
間酸素よ１ｚ゛どの関係を示したグｙノ゛Ｃル〕る８
１３・・・８１基板
特お出願人
代 理 人
住人金属工業株式４会社Figure 1 shows a method for manufacturing a cell-conductor substrate according to the present invention.
FIG. 2 is a graph schematically showing the process of manufacturing a semiconductor substrate according to the present invention. is a TEM photograph of stacking faults inside a semiconductor substrate according to the present invention, Section 4
The figure shows the density exertion from the surface of the stacking fault inside the semiconductor substrate according to the present invention.
Figure 6 shows the oxygen precipitates and transfer Q-lubes formed inside the cliff conductor substrate at 900°C. 4, 1 connection (2j・T E h of oxygen precipitates, ・1 copy, Fig. 7 (
J'
8 13...81 Substrate Special Applicant Representative Jinju Metal Industry Co., Ltd. 4 Company
Claims (2)
表面からほぼ５０μｍ〜１００μｍの範囲に積層欠陥を
１０＾７個／ｃｍ＾３〜１０＾９個／ｃｍ＾３の密度で
含有していることを特徴とする半導体基板。(1) A semiconductor substrate containing oxygen contains stacking faults within a range of approximately 50 μm to 100 μm from the surface of the semiconductor substrate at a density of 10^7 pieces/cm^3 to 10^9 pieces/cm^3. A semiconductor substrate characterized by:
０００℃で加熱して基板表面の酸素を外方拡散させ、こ
の後８００℃〜８５０℃の温度範囲で熱処理することを
特徴とする半導体基板の製造方法。(2) Place the semiconductor substrate containing oxygen in a reducing gas atmosphere for about 1 hour.
1. A method for manufacturing a semiconductor substrate, which comprises heating at 000°C to diffuse oxygen on the surface of the substrate outward, and then heat-treating at a temperature in the range of 800°C to 850°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18364290A JPH0469937A (en) | 1990-07-10 | 1990-07-10 | Semiconductor substrate and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18364290A JPH0469937A (en) | 1990-07-10 | 1990-07-10 | Semiconductor substrate and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0469937A true JPH0469937A (en) | 1992-03-05 |
Family
ID=16139364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18364290A Pending JPH0469937A (en) | 1990-07-10 | 1990-07-10 | Semiconductor substrate and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0469937A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897222A (en) * | 1994-09-26 | 1996-04-12 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer, and silicon wafer |
| WO2002025717A1 (en) * | 2000-09-20 | 2002-03-28 | Shin-Etsu Handotai Co.,Ltd. | Silicon wafer and silicon epitaxial wafer and production methods therefor |
| WO2003092065A1 (en) * | 2002-04-26 | 2003-11-06 | Sumitomo Mitsubishi Silicon Corporation | High resistance silicon wafer and method for production thereof |
| JP2004056132A (en) * | 2002-07-16 | 2004-02-19 | Hynix Semiconductor Inc | Method for fabricating semiconductor wafer |
| JP2007235153A (en) * | 2002-04-26 | 2007-09-13 | Sumco Corp | High-resistance silicon wafer, and manufacturing method thereof |
-
1990
- 1990-07-10 JP JP18364290A patent/JPH0469937A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897222A (en) * | 1994-09-26 | 1996-04-12 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer, and silicon wafer |
| WO2002025717A1 (en) * | 2000-09-20 | 2002-03-28 | Shin-Etsu Handotai Co.,Ltd. | Silicon wafer and silicon epitaxial wafer and production methods therefor |
| JP2002100631A (en) * | 2000-09-20 | 2002-04-05 | Shin Etsu Handotai Co Ltd | Silicon wafer, silicon epitaxial wafer and method for manufacturing these |
| EP1326270A1 (en) * | 2000-09-20 | 2003-07-09 | Shin-Etsu Handotai Company Limited | Silicon wafer and silicon epitaxial wafer and production methods therefor |
| US6858094B2 (en) | 2000-09-20 | 2005-02-22 | Shin-Etsu Handotai Co., Ltd. | Silicon wafer and silicon epitaxial wafer and production methods therefor |
| EP1326270A4 (en) * | 2000-09-20 | 2007-07-18 | Shinetsu Handotai Kk | Silicon wafer and silicon epitaxial wafer and production methods therefor |
| KR100841062B1 (en) * | 2000-09-20 | 2008-06-25 | 신에쯔 한도타이 가부시키가이샤 | Silicon wafer and silicon epitaxial wafer and production methods therefor |
| WO2003092065A1 (en) * | 2002-04-26 | 2003-11-06 | Sumitomo Mitsubishi Silicon Corporation | High resistance silicon wafer and method for production thereof |
| JP2007235153A (en) * | 2002-04-26 | 2007-09-13 | Sumco Corp | High-resistance silicon wafer, and manufacturing method thereof |
| KR100829767B1 (en) * | 2002-04-26 | 2008-05-16 | 가부시키가이샤 섬코 | High resistance silicon wafer and method for production thereof |
| US7397110B2 (en) | 2002-04-26 | 2008-07-08 | Sumitomo Mitsubishi Silicon Corporation | High resistance silicon wafer and its manufacturing method |
| JP2004056132A (en) * | 2002-07-16 | 2004-02-19 | Hynix Semiconductor Inc | Method for fabricating semiconductor wafer |
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