JPH0897221A - Manufacture of silicon wafer, and silicon wafer - Google Patents
Manufacture of silicon wafer, and silicon waferInfo
- Publication number
- JPH0897221A JPH0897221A JP22976594A JP22976594A JPH0897221A JP H0897221 A JPH0897221 A JP H0897221A JP 22976594 A JP22976594 A JP 22976594A JP 22976594 A JP22976594 A JP 22976594A JP H0897221 A JPH0897221 A JP H0897221A
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- JP
- Japan
- Prior art keywords
- bmd
- wafer
- heat treatment
- temperature
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、超ＬＳＩなどの半導体
のデバイス用のシリコンウェーハおよびその製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon wafer for semiconductor devices such as VLSI and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】超ＬＳＩ用半導体デバイスの製造プロセ
スにおいて、ウェーハに混入している微量金属不純物お
よびウェーハのデバイス活性領域（ウェーハ表面から深
さ１０μｍ程度）内に存在する微小欠陥が製造される半
導体デバイスの特性および信頼性劣化の原因となること
がある。そのため、従来よりこれらの金属不純物および
微小欠陥を極力低減するためにさまざまな対策がなされ
ている。2. Description of the Related Art In a manufacturing process of a semiconductor device for VLSI, a semiconductor in which a minute amount of metal impurities mixed in a wafer and a minute defect existing in a device active region (about 10 μm in depth from the wafer surface) of the wafer are manufactured. This may cause deterioration of device characteristics and reliability. Therefore, various measures have been conventionally taken to reduce these metal impurities and minute defects as much as possible.
【０００３】金属不純物を低減させる方法としては、金
属不純物を捕獲（ゲッタリング）するためにサンドブラ
ストなどにより、ウェーハ裏面に微小な歪みを設けるバ
ックサイドダメージ法（ＢＳＤ法）がある。また、ウェ
ーハ裏面に多結晶シリコンを堆積する方法も用いられて
いる。As a method of reducing metal impurities, there is a backside damage method (BSD method) in which a minute strain is provided on the back surface of a wafer by sandblasting or the like for capturing (gettering) metal impurities. A method of depositing polycrystalline silicon on the back surface of the wafer is also used.
【０００４】また、後者の対策としては、デバイス活性
領域に微小欠陥を有さない、気相成長させた単結晶シリ
コン層をもつエピタキシャルウェーハが用いられてい
る。As a measure against the latter, an epitaxial wafer having a vapor-grown single crystal silicon layer having no minute defects in the device active region is used.
【０００５】さらに、両者の対策を同時に行うためにイ
ントリンシックゲッタリング法（ＩＧ法）が開発され
た。ＩＧ法はウェーハを高温熱処理することにより、ウ
ェーハ表面の酸素を外方に拡散させて微小欠陥の核とな
る格子間酸素を減少させ、デバイス活性領域に微小欠陥
のないｄｅｎｕｄｅｄ ｚｏｎｅ（ＤＺ層）を形成させ
る。さらにＤＺ層以下の深い領域（バルク部）では含ま
れている過剰な格子間酸素が高温熱処理によって析出
し、微小なＳｉＯ2 析出物に代表されるＢＭＤを生成す
る。これらのＢＭＤがバルク部のシリコンマトリックス
に歪みを及ぼして二次的な転位や積層欠陥を誘起し、金
属不純物をゲッタリングする。Further, an intrinsic gettering method (IG method) has been developed in order to simultaneously take measures against both. The IG method heat-treats a wafer at a high temperature to diffuse outward oxygen on the wafer surface to reduce interstitial oxygen, which is a nucleus of microdefects, and to form a depleted zone (DZ layer) having no microdefects in a device active region. Let it form. Further, in the deep region (bulk portion) below the DZ layer, the excess interstitial oxygen contained is precipitated by the high temperature heat treatment, and BMD typified by minute SiO 2 precipitates is generated. These BMDs exert strain on the silicon matrix in the bulk portion to induce secondary dislocations and stacking faults, and getter metal impurities.
【０００６】ＩＧ法においては、引き上げられた単結晶
シリコンインゴットの熱履歴に影響を受けないこと、お
よびより広い含有酸素濃度範囲のウェーハを利用するこ
とを目的として、複数段の熱処理を施している。まず、
前熱処理においては、酸素含有の不活性ガス雰囲気中で
高温（〜１２００℃）で熱処理を施してウェーハ表面か
ら酸素を外方に拡散させ、もともと存在していた酸素に
起因するＢＭＤ核を縮小・消滅させる。次に酸素雰囲気
中の中段の低温（５００〜９００℃）の熱処理を施して
バルク部にＢＭＤ核を生成させる。そして最終的に酸素
雰囲気中の中温（〜１０００℃）熱処理により、ＢＭＤ
核を成長させてＢＭＤを生成・成長させている。中段の
熱処理には種々の工夫がなされており、例えば等温アニ
ール、低温からの多段階アニールおよび低温からのラン
ピングアニールなどが代表的である。In the IG method, a plurality of stages of heat treatment are performed for the purpose of being unaffected by the thermal history of the pulled single crystal silicon ingot and utilizing a wafer having a wider oxygen concentration range. . First,
In the pre-heat treatment, heat treatment is performed at a high temperature (up to 1200 ° C.) in an oxygen-containing inert gas atmosphere to diffuse oxygen outward from the wafer surface to reduce BMD nuclei originally existing due to oxygen. Extinguish. Next, heat treatment at a low temperature (500 to 900 ° C.) in the middle stage in an oxygen atmosphere is performed to generate BMD nuclei in the bulk part. And finally, the BMD is performed by the medium temperature heat treatment (up to 1000 ° C.) in the oxygen atmosphere.
BMD is generated and grown by growing nuclei. Various ideas have been made for the heat treatment in the middle stage, and for example, isothermal annealing, multi-stage annealing from low temperature, ramping annealing from low temperature, etc. are typical.
【０００７】上記ＩＧ法においては、実際には前段の熱
処理による酸素の外方拡散が十分でなくデバイス活性領
域に微小な酸素析出物（ＢＭＤなど）が残ってしまうこ
とがある。また、複数の熱処理工程が必要なため、作業
性の問題およびコストの問題などにより実用化があまり
進んでいない。In the IG method described above, the outward diffusion of oxygen due to the heat treatment in the preceding stage is not sufficient in practice, and minute oxygen precipitates (such as BMD) may remain in the device active region. Further, since a plurality of heat treatment steps are required, practical application has not progressed so much due to workability problems and cost problems.
【０００８】最近、このような多段階の熱処理を必要と
する方法に代わり、１００％還元性ガスまたは１００％
不活性ガスあるいは還元性ガスと不活性ガスの混合ガス
雰囲気中で高温の熱処理を施すことにより、ウェーハ表
面にＤＺ層、バルク部にＢＭＤを形成し、イントリンシ
ックゲッタリング効果（ＩＧ効果）をもたせるウェーハ
の製造方法も行われている。これらの製造方法に関して
本出願人は特開昭６０−２４７９３５号、特開昭６１−
１９３４５８号、特開昭６１−１９３４５９号、特開昭
６１−１９３４５６号、特開昭６２−１２３０９８号、
特開平２−１７７５４１号などの出願を行っている。Recently, instead of the method requiring such multi-step heat treatment, 100% reducing gas or 100% is used.
By performing high temperature heat treatment in an inert gas or a mixed gas atmosphere of a reducing gas and an inert gas, a DZ layer is formed on the wafer surface and a BMD is formed on the bulk portion, and an intrinsic gettering effect (IG effect) is provided. Wafer manufacturing methods are also used. The applicant of the present invention relates to the production methods thereof in JP-A-60-247935 and 61-61.
193458, JP-A-61-193459, JP-A-61-193456, JP-A-62-123098,
Patent applications such as JP-A-2-177541 are filed.
【０００９】この方法の代表的な不活性ガス雰囲気での
熱処理は、次のような温度プロセスによって行われてい
る。熱処理温度まで昇温する昇温プロセスは、室温から
１０００℃までは約１０℃／ｍｉｎ程度、１０００℃か
ら１２００℃までは３℃／ｍｉｎ以下、熱処理は約１２
００℃において１時間以上、降温プロセスは１２００℃
から９００℃程度まで３℃／ｍｉｎ以下である。図１に
代表的な温度プロセスを示す。図１の熱処理操作は、昇
温プロセスは室温から１０００℃までは１０℃／ｍｉ
ｎ、１０００℃から１２００℃の間は３℃／ｍｉｎ、熱
処理は１２００℃で１時間、降温プロセスは１２００℃
から１０００℃まで３℃／ｍｉｎ、１０００℃以下は１
０℃／ｍｉｎで行っている。The typical heat treatment in an inert gas atmosphere of this method is performed by the following temperature process. The heating process for raising the temperature to the heat treatment temperature is about 10 ° C./min from room temperature to 1000 ° C., 3 ° C./min or less from 1000 ° C. to 1200 ° C., and the heat treatment is about 12 ° C.
1 hour or more at 00 ℃, 1200 ℃ for cooling process
To 900 ° C. or less and 3 ° C./min or less. A typical temperature process is shown in FIG. In the heat treatment operation of FIG. 1, the temperature rising process is 10 ° C./mi from room temperature to 1000 ° C.
n, 3 ° C / min between 1000 ° C and 1200 ° C, heat treatment at 1200 ° C for 1 hour, temperature lowering process at 1200 ° C
To 1000 ° C at 3 ° C / min, 1000 ° C or less is 1
It is performed at 0 ° C./min.
【００１０】この熱処理操作において、１０００℃以上
の領域の昇温プロセスでは昇温速度を３℃／ｍｉｎ程度
より高くすると処理中のウェーハにスリップが発生して
しまう恐れがある。また、通常使用されている熱処理炉
は断熱や発熱体の制約のため、早い速度で昇温を行うこ
とはされていなかった。In this heat treatment operation, in the temperature raising process in the region of 1000 ° C. or higher, if the temperature raising rate is higher than about 3 ° C./min, slip may occur on the wafer being processed. In addition, the heat treatment furnace that is usually used has not been heated at a high speed because of heat insulation and restrictions of heating elements.
【００１１】上記熱処理過程によるウェーハ構造の形成
のメカニズムについて以下のように推測できる。昇温プ
ロセス中では昇温速度が遅いため、バルク部ではＢＭＤ
の成長が起こるとともに同時に表層部では酸素の外方拡
散が起こり、表層部の酸素濃度は低下する。熱処理温度
に到達後は、表層部の酸素の外方拡散がより行われ表層
部のＢＭＤ核となる格子間酸素が減少し表層部のＢＭＤ
の消滅が加速される。バルク部では高温熱処理のため酸
素がウェーハ内を拡散しＢＭＤの収縮が生じる。しかし
酸素減少量が少ないためＢＭＤの消滅は生じない。降温
プロセス中では、昇温速度が遅いため、理論上はウェー
ハ表層部でもＢＭＤの成長が生じるが表層部の酸素は外
方拡散により減少しているためＢＭＤは形成されずにＤ
Ｚ層となる。これに対し、バルク部では再びＢＭＤの成
長・析出が生じる。The mechanism of forming the wafer structure by the above heat treatment process can be estimated as follows. During the temperature raising process, the temperature rising rate is slow, so BMD in the bulk part
Growth of oxygen occurs simultaneously with the outward diffusion of oxygen in the surface layer, and the oxygen concentration in the surface layer decreases. After reaching the heat treatment temperature, outward diffusion of oxygen in the surface layer portion is further performed, and interstitial oxygen, which becomes BMD nuclei in the surface layer portion, decreases and BMD in the surface layer portion decreases.
Disappearance is accelerated. In the bulk portion, oxygen is diffused in the wafer due to the high temperature heat treatment, and BMD shrinkage occurs. However, since the amount of oxygen decrease is small, BMD disappears. During the temperature lowering process, since the temperature rising rate is slow, theoretically BMD growth also occurs in the wafer surface layer portion, but oxygen in the surface layer portion is reduced by outward diffusion, so BMD is not formed.
It becomes the Z layer. On the other hand, BMD growth / precipitation occurs again in the bulk portion.
【００１２】図２にウェーハにアルゴンガス１００％
中、図１に示す様な熱処理を行った場合のウェーハ初期
酸素濃度と熱処理後のウェーハのバルク部のＢＭＤ密度
との関係を●で示す。図２より熱処理後のバルク部のＢ
ＭＤ密度はウェーハの初期酸素濃度に依存し、初期酸素
濃度が高くなるにつれバルク部のＢＭＤ密度が大きくな
ることが理解される。FIG. 2 shows a wafer with 100% argon gas.
The relationship between the initial oxygen concentration of the wafer and the BMD density of the bulk portion of the wafer after the heat treatment when the heat treatment as shown in FIG. From Fig. 2, B of the bulk part after heat treatment
It is understood that the MD density depends on the initial oxygen concentration of the wafer, and that the BMD density of the bulk portion increases as the initial oxygen concentration increases.
【００１３】近年、高集積化の進むメモリーデバイスな
どではその特性向上のため、出発原料としてのシリコン
ウェーハには表面のデバイス活性層をより完全に近い無
欠陥にすることが要求され、かつ、複雑化するデバイス
製造プロセス中に混入する金属不純物をゲッタリングす
るとができる構造を有することが必要かつ重要となって
いる。In recent years, in order to improve the characteristics of a highly integrated memory device or the like, a silicon wafer as a starting material is required to have a device active layer on the surface that is almost completely defect-free, and is complicated. It is necessary and important to have a structure capable of gettering metal impurities that are mixed in during the device manufacturing process.
【００１４】前者の要求、すなわちより完全な無欠陥層
を形成するには、欠陥の原因となる格子間酸素濃度が低
いものの方が好ましいのであるが、そのようなウェーハ
は従来の製造方法・条件では製造が難しく生産性、コス
トなどの面から問題が多い。また、そのようなウェーハ
は従来の熱処理工程では内部のバルク部にゲッタリング
機能を十分に果たすに足りる十分な量のＢＭＤを形成す
る事が困難である。In the former case, that is, in order to form a more perfect defect-free layer, it is preferable that the concentration of interstitial oxygen that causes defects is low. Manufacturing is difficult and there are many problems in terms of productivity and cost. In addition, it is difficult to form a sufficient amount of BMD in the internal bulk portion of such a wafer in the conventional heat treatment process to sufficiently achieve the gettering function.
【００１５】本発明は、以上のような問題を解決するた
めになされたものであり、比較的低い酸素濃度範囲のウ
ェーハであっても、デバイス活性層はより無欠陥に、か
つバルク部にＢＭＤを高い密度で形成し十分なゲッタリ
ング効果を奏することができるシリコンウェーハの製造
方法およびそのようなシリコンウェーハを提供すること
を目的とする。The present invention has been made in order to solve the above problems. Even in a wafer having a relatively low oxygen concentration range, the device active layer is more defect-free and the BMD is formed in the bulk portion. An object of the present invention is to provide a method for manufacturing a silicon wafer capable of forming a high density of silicon and exhibiting a sufficient gettering effect, and such a silicon wafer.
【００１６】[0016]
【課題を解決するための手段と作用】本願の第１の発明
は、チョクラルスキー法により製造された単結晶シリコ
ンインゴットから製造された格子間酸素濃度［Ｏｉ］が
１．５５×１０18ａｔｏｍｓ／ｃｍ3 未満のシリコンウ
ェーハを、不活性ガス雰囲気中で、熱処理温度を１１０
０℃〜１３００℃、熱処理時間を１分間〜４８時間、熱
処理過程中１０００℃から１３００℃の温度範囲内にお
ける昇温速度を５〜１０℃／ｍｉｎの条件で熱処理を施
すことによって、ウェーハ表面から少なくとも深さ１０
μｍ以上にわたって大きさが２０ｎｍ以上のＢＭＤが１
０3 個／ｃｍ3 以下である無欠陥層を有し、ウェーハ内
部バルク部の酸素析出物密度［ＢＭＤ］が、［ＢＭＤ］
≦１×１０10個／ｃｍ3 、かつ［ＢＭＤ］≧ｅｘｐ
｛１．１５１×１０-17 ×［Ｏｉ］＋１．１５１｝個／
ｃｍ3 であるウェーハを製造することを特徴とするシリ
コンウェーハの製造方法を要旨とする。また、本願の第
２の発明は、チョクラルスキー法により製造された単結
晶シリコンインゴットから製造された格子間酸素濃度
［Ｏｉ］が１．５５×１０18ａｔｏｍｓ／ｃｍ3 未満の
シリコンウェーハを、不活性ガス雰囲気中で、熱処理温
度を１１００℃〜１３００℃、熱処理時間を１分間〜４
８時間、熱処理過程中１０００℃から１３００℃の温度
範囲内における昇温速度を５〜１０℃／ｍｉｎの条件で
熱処理を施すことによって製造された、ウェーハ表面か
ら少なくとも深さ１０μｍ以上にわたって大きさが２０
ｎｍ以上のＢＭＤが１０3 個／ｃｍ3 以下である無欠陥
層を有し、ウェーハ内部バルク部の酸素析出物密度［Ｂ
ＭＤ］が、［ＢＭＤ］≦１×１０10個／ｃｍ3 、かつ
［ＢＭＤ］≧ｅｘｐ｛１．１５１×１０-17 ×［Ｏｉ］
＋１．１５１｝個／ｃｍ3 であることを特徴とするシリ
コンウェーハを要旨とする。The first invention of the present application is that the interstitial oxygen concentration [Oi] produced from a single crystal silicon ingot produced by the Czochralski method is 1.55 × 10 18 atoms. The silicon wafer of less than 1 / cm 3 is heated at a heat treatment temperature of 110 in an inert gas atmosphere.
The heat treatment is performed at a temperature of 0 ° C. to 1300 ° C., a heat treatment time of 1 minute to 48 hours, and a heating rate of 5 ° C./min to 5 ° C./min in the temperature range of 1000 ° C. to 1300 ° C. during the heat treatment process. At least 10
1 BMD with a size of 20 nm or more over μm
It has a defect-free layer of not more than 0 3 / cm 3 , and the density of oxygen precipitates [BMD] in the bulk part inside the wafer is [BMD].
≦ 1 × 10 10 pieces / cm 3 and [BMD] ≧ exp
{1.151 × 10 -17 × [Oi] +1.151} /
A gist is a method for manufacturing a silicon wafer, which is characterized in that a wafer having a size of 3 cm 3 is manufactured. A second invention of the present application is a silicon wafer having an interstitial oxygen concentration [Oi] of less than 1.55 × 10 18 atoms / cm 3 manufactured from a single crystal silicon ingot manufactured by the Czochralski method. In an inert gas atmosphere, the heat treatment temperature is 1100 ° C to 1300 ° C, and the heat treatment time is 1 minute to 4
The size of the wafer is at least 10 μm or more deep from the wafer surface, which is manufactured by performing heat treatment for 8 hours in the temperature range of 1000 ° C. to 1300 ° C. during the heat treatment process under the condition of 5 to 10 ° C./min. 20
nm or more BMD has a defect-free layer is 10 3 / cm 3 or less, the oxygen precipitate density of the wafer inside the bulk portion [B
MD] is [BMD] ≦ 1 × 10 10 pieces / cm 3 and [BMD] ≧ exp {1.151 × 10 −17 × [Oi]
The gist is a silicon wafer characterized by being +1.151} / cm 3 .
【００１７】また、本明細書中の酸素濃度はすべてＯｌ
ｄ ＡＳＴＭによる換算係数による値である。Further, all oxygen concentrations in this specification are Ol.
d It is a value based on a conversion coefficient according to ASTM.
【００１８】一般的にウェーハを熱処理する際のＢＭＤ
の挙動について説明する。BMD in general when heat treating a wafer
The behavior of will be described.
【００１９】古典的核形成理論によれば、ＢＭＤは酸素
クラスタを均一核として過飽和な酸素が付着および脱離
することによりそれぞれ成長および収縮する。According to the classical nucleation theory, BMD grows and contracts by attaching and detaching supersaturated oxygen with oxygen clusters as uniform nuclei.
【００２０】ある時点で存在するＢＭＤが成長するか縮
小・消滅するかは、その時点でのＢＭＤの大きさ、およ
びそのときの温度（および酸素濃度）によって定まる臨
界核半径によってきまる。臨界核半径は温度に依存し、
高温になれば臨界核半径は増大する。ある温度にウェー
ハを保持すると、その温度での臨界核半径よりも既に大
きく成長しているＢＭＤは成長を続け、臨界核半径より
小さい径のＢＭＤは縮小・消滅する。Whether the BMD existing at a certain time grows or shrinks / extinguishes depends on the size of the BMD at that time and the critical nucleus radius determined by the temperature (and oxygen concentration) at that time. Critical nucleus radius depends on temperature,
The critical nucleus radius increases with increasing temperature. When the wafer is held at a certain temperature, the BMD that has already grown larger than the critical nucleus radius at that temperature continues to grow, and the BMD having a diameter smaller than the critical nucleus radius shrinks and disappears.
【００２１】本発明者らは以上の知見に基づきこれをウ
ェーハの製造方法に応用することによってＢＭＤを制御
し、高集積デバイス製造に適したウェーハが製造できる
ことを知得して本発明をなし得たものである。Based on the above findings, the present inventors can realize the present invention by applying the method to a wafer manufacturing method to control the BMD and manufacture a wafer suitable for manufacturing highly integrated devices. It is a thing.
【００２２】本発明は通常のチョクラルスキー法で製造
されたシリコンインゴットから製造されるシリコンウェ
ーハであって、含有酸素濃度が比較的低い領域である
１．５５×１０18ａｔｏｍｓ／ｃｍ3 未満のウェーハの
熱処理に適用される。これより高い酸素濃度を有するウ
ェーハは前に述べたように本発明の熱処理を施さなくて
もＢＭＤ密度を高くできる。The present invention is a silicon wafer manufactured from a silicon ingot manufactured by the ordinary Czochralski method, in which the oxygen concentration is less than 1.55 × 10 18 atoms / cm 3 , which is a relatively low region. Applied for heat treatment of wafers. A wafer having a higher oxygen concentration can have a higher BMD density without the heat treatment of the present invention as described above.
【００２３】本発明の熱処理は、１００％不活性ガス雰
囲気中で行われる。１００％不活性ガス雰囲気中で行う
ことは、１００％水素ガス雰囲気中と同様に無欠陥層の
形成、酸素の外方拡散のしやすさおよび熱処理の際の面
荒れが生じにくいなどの面から好ましい。The heat treatment of the present invention is performed in a 100% inert gas atmosphere. Performing in a 100% inert gas atmosphere is similar to that in a 100% hydrogen gas atmosphere in terms of formation of a defect-free layer, ease of outward diffusion of oxygen, and surface roughening during heat treatment. preferable.
【００２４】本発明の熱処理は１１００℃〜１３００℃
で行われる。１１００℃以下では本発明による効果が得
られず、１３００℃以上では酸素の外方拡散効果は優れ
ているが、装置の安全性と信頼性に問題がある。The heat treatment of the present invention is performed at 1100 ° C to 1300 ° C.
Done in. At 1100 ° C or lower, the effect of the present invention is not obtained, and at 1300 ° C or higher, the outward diffusion effect of oxygen is excellent, but there is a problem in safety and reliability of the device.
【００２５】本発明の熱処理時間は１分間〜４８時間で
ある。１分間未満では本発明の効果が得られず、４８時
間を越えて熱処理を行っても効果の向上は見込めない。The heat treatment time of the present invention is 1 minute to 48 hours. If it is less than 1 minute, the effect of the present invention cannot be obtained, and if the heat treatment is performed for more than 48 hours, the effect cannot be expected to be improved.
【００２６】本発明の熱処理過程中、１０００℃以上か
ら熱処理温度に到るまでの温度範囲内では昇温速度を５
〜１０℃／ｍｉｎとして昇温する事が必要である。During the heat treatment process of the present invention, the rate of temperature rise is 5 within the temperature range from 1000 ° C. to the heat treatment temperature.
It is necessary to raise the temperature at 10 ° C / min.
【００２７】１０００℃以上の領域において昇温速度が
５℃／ｍｉｎ未満であると、前述した臨界核半径の増大
速度はＢＭＤの成長速度を追い抜くことが無くなり、Ｂ
ＭＤは成長するかに思える。しかし、本発明のような低
酸素含有量のウェーハでは付着する酸素自体が少なく、
また、昇温過程を含めた実効のある熱処理時間が長くな
るため、存在するＢＭＤ核に付着する酸素量（確率）よ
り脱離する酸素量が多くなってしまうのでＢＭＤの大き
さが小さくなり、さらには消滅する。したがって密度も
小さくなる。When the rate of temperature rise is less than 5 ° C./min in the region of 1000 ° C. or higher, the above-mentioned increasing rate of the critical nucleus radius does not overtake the BMD growth rate, and B
MD seems to grow. However, with a low oxygen content wafer such as that of the present invention, the amount of attached oxygen itself is small,
In addition, since the effective heat treatment time including the temperature raising process becomes long, the amount of released oxygen becomes larger than the amount of oxygen (probability) attached to existing BMD nuclei, and the size of BMD becomes smaller. Furthermore, it disappears. Therefore, the density becomes small.
【００２８】１０００℃以上の領域において、本発明で
規定するように昇温速度が５〜１０℃／ｍｉｎである
と、前述の場合とは逆で、熱処理操作全体を通して比較
した場合に、付着する酸素量の方が脱離する酸素量より
多くなるのでＢＭＤの大きさおよび密度が増加すると考
えられる。In the region of 1000 ° C. or higher, the temperature rising rate of 5 to 10 ° C./min as defined in the present invention is contrary to the above-mentioned case, and adheres when compared throughout the heat treatment operation. It is considered that the BMD size and density increase because the amount of oxygen becomes larger than the amount of desorbed oxygen.
【００２９】１０００℃以上の領域において、昇温速度
が１０℃／ｍｉｎより大きいと、前述した臨界核半径の
増大速度の方が、既に存在するＢＭＤのその温度におけ
る成長速度よりも大きくなり、また、昇温過程の時間が
短くなるので臨界核半径と存在するＢＭＤの径の差がよ
り大きくなり、ＢＭＤは成長せず縮小の方向に向かう。If the heating rate is higher than 10 ° C./min in the region of 1000 ° C. or higher, the above-mentioned increasing rate of the critical nucleus radius becomes higher than the growth rate of the existing BMD at that temperature, and Since the time of the temperature rising process is shortened, the difference between the critical nucleus radius and the diameter of the existing BMD becomes larger, and the BMD does not grow but tends to shrink.
【００３０】このように昇温速度を５〜１０℃／ｍｉｎ
とした場合にのみ高い密度でＢＭＤを形成することがで
きる。In this way, the rate of temperature rise is 5 to 10 ° C./min.
Only in such a case, BMD can be formed with high density.
【００３１】熱処理温度においては、表面領域では酸素
の外方拡散が進むため、表面近傍のＢＭＤの周りの酸素
濃度が低くなり消滅は進みＤＺ層が形成される。バルク
部では酸素の外方拡散の効果が及びにくく、酸素濃度の
減少は少ない。本発明の昇温速度で昇温した場合には、
ＢＭＤの大きさは熱処理温度での臨界核半径よりすでに
大きくなっているため、ＢＭＤは成長する。At the heat treatment temperature, outward diffusion of oxygen progresses in the surface region, so that the oxygen concentration around the BMD near the surface decreases and the disappearance progresses to form the DZ layer. The effect of outward diffusion of oxygen is difficult to reach in the bulk portion, and the decrease in oxygen concentration is small. When the temperature is raised at the heating rate of the present invention,
Since the size of BMD is already larger than the critical nucleus radius at the heat treatment temperature, BMD grows.
【００３２】降温プロセス中は、表層部ではすでにＢＭ
Ｄが減少し、さらに酸素濃度が小さくなっているため降
温速度を変化させてもＢＭＤは発生・成長しないと考え
られる。バルク部ではＢＭＤがすでに成長しており降温
速度を変化させても大きな影響は無い。ただし、降温速
度は生産性、ウェーハの品質（スリップ、面荒れ発生の
防止）、および使用する炉の構造上の問題などから２〜
３００℃／ｍｉｎであることが望ましい。During the temperature lowering process, the BM is already in the surface layer.
It is considered that BMD does not occur or grow even if the temperature lowering rate is changed because D decreases and the oxygen concentration decreases. BMD has already grown in the bulk portion, and changing the temperature lowering rate has no significant effect. However, the rate of temperature decrease depends on productivity, wafer quality (preventing slippage and surface roughness), and structural problems of the furnace used.
It is preferably 300 ° C./min.
【００３３】このような熱処理を施すことによって、初
期酸素濃度が１．５５×１０18ａｔｏｍｓ／ｃｍ3 未満
のシリコンウェーハを使用して、ウェーハ表面から１０
μｍ以上の深さにわたって大きさが２０ｎｍ以上のＢＭ
Ｄが１０3 個／ｃｍ3 以下であるＤＺ層を有し、かつ、
ＤＺ層より深い領域のバルク部のＢＭＤ密度［ＢＭＤ］
≦１×１０10個／ｃｍ3 、かつ［ＢＭＤ］≧ｅｘｐ
｛１．１５１×１０-17 ×［Ｏｉ］＋１．１５１｝個／
ｃｍ3 であるウェーハを製造することができる。By carrying out such a heat treatment, a silicon wafer having an initial oxygen concentration of less than 1.55 × 10 18 atoms / cm 3 is used, and 10 times from the wafer surface.
BM having a size of 20 nm or more over a depth of μm or more
A DZ layer having D of 10 3 / cm 3 or less, and
BMD density [BMD] of the bulk part in the region deeper than the DZ layer
≦ 1 × 10 10 pieces / cm 3 and [BMD] ≧ exp
{1.151 × 10 -17 × [Oi] +1.151} /
Wafers that are cm 3 can be manufactured.
【００３４】このようなウェーハは図２のグラフ中の領
域Ａ＋Ｂ＋Ｃで示される。Such a wafer is indicated by the area A + B + C in the graph of FIG.
【００３５】上述のような初期酸素濃度を有するウェー
ハであって、表層部に良好なＤＺ層を有し、バルク部の
ＢＭＤ密度が上述の範囲内にあるウェーハは従来存在せ
ず、本発明によって初めて提供されるものである。According to the present invention, there is no wafer having the above-mentioned initial oxygen concentration, which has a good DZ layer in the surface layer portion and the BMD density of the bulk portion is within the above range. It will be provided for the first time.
【００３６】より好ましいＢＭＤ密度の範囲としては、
１×１０8 個／ｃｍ3 ≦［ＢＭＤ］≦１×１０10個／ｃ
ｍ3 （図２中の領域Ｂ＋Ｃ）であり、さらに［ＢＭＤ］
≦１×１０10個／ｃｍ3 、かつ［ＢＭＤ］≧ｅｘｐ
｛４．６０５×１０-18 ×［Ｏｉ］＋１２．４３４｝個
／ｃｍ3 （図２中の領域Ｃ）である。A more preferable range of BMD density is as follows.
1 × 10 8 pieces / cm 3 ≦ [BMD] ≦ 1 × 10 10 pieces / c
m 3 (area B + C in FIG. 2), and further [BMD]
≦ 1 × 10 10 pieces / cm 3 and [BMD] ≧ exp
It is {4.605 × 10 −18 × [Oi] +1.434} pieces / cm 3 (region C in FIG. 2).
【００３７】このような範囲のＢＭＤ密度を有するウェ
ーハは十分なゲッタリング機能を有し、かつ表層のデバ
イス活性層は良好な無欠陥のＤＺ層となる。A wafer having a BMD density in such a range has a sufficient gettering function, and the surface device active layer is a good defect-free DZ layer.
【００３８】表層部のＤＺ層中のＢＭＤは実質的に０で
あることが好ましい。ＤＺ層中のＢＭＤを上記のように
規定した理由は、現在の装置のＢＭＤの大きさの検出限
界が２０ｎｍであるからであり、ＢＭＤ密度が１０3 個
／ｃｍ3 を越えるともはや無欠陥とはいえず、製造され
るデバイスの特性に悪影響を及ぼすためである。The BMD in the DZ layer in the surface layer portion is preferably substantially 0. The reason why the BMD in the DZ layer is defined as described above is that the detection limit of the BMD size of the present device is 20 nm, and when the BMD density exceeds 10 3 pieces / cm 3 , it is no longer defective. This is because the characteristics of the manufactured device are adversely affected.
【００３９】[0039]
【実施例】以下、本発明の実施例を説明する使用したウ
ェーハはすべてチョクラルスキー法によって引き上げら
れたシリコンインゴットから切り出し、通常の方法によ
って製造され、鏡面加工を施したシリコンウェーハを用
いた。これらのウェーハは、Ｎタイプ、面方位（１０
０）、比抵抗１〜１０００Ω／ｃｍ、初期格子間酸素濃
度［Ｏｉ］は１．４５〜１．７４×１０18ａｔｏｍｓ／
ｃｍ3 である。EXAMPLES Hereinafter, the wafers used for explaining the examples of the present invention were all silicon wafers which were cut out from a silicon ingot pulled up by the Czochralski method, manufactured by a usual method, and subjected to mirror finishing. These wafers are of N type, plane orientation (10
0), the specific resistance is 1 to 1000 Ω / cm, and the initial interstitial oxygen concentration [Oi] is 1.45 to 1.74 × 10 18 atoms /
It is cm 3 .
【００４０】実施例１ 前記ウェーハのうち、［Ｏｉ］が１．５０×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％アルゴンガス雰囲
気中、１２００℃で１時間熱処理を行った。ただし、１
０００℃から１２００℃の範囲の昇温速度を６．３℃／
ｍｉｎ、降温速度を１０℃／ｍｉｎとした。Example 1 Among the above wafers, [Oi] was 1.50 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% argon gas atmosphere. However, 1
The heating rate in the range of 000 ° C to 1200 ° C is 6.3 ° C /
min, and the temperature lowering rate was 10 ° C./min.
【００４１】実施例２ 前記ウェーハのうち、［Ｏｉ］が１．４５×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％アルゴンガス雰囲
気中、１２００℃で１時間熱処理を行った。ただし、１
０００℃から１２００℃の範囲の昇温速度を８．５℃／
ｍｉｎ、降温速度を３．８℃／ｍｉｎとした。Example 2 Among the above wafers, [Oi] was 1.45 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% argon gas atmosphere. However, 1
The temperature rising rate in the range of 000 ° C to 1200 ° C is 8.5 ° C /
min, and the temperature lowering rate was 3.8 ° C./min.
【００４２】比較例１ 前記ウェーハのうち、［Ｏｉ］が１．７２×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％水素ガス雰囲気
中、１２００℃で１時間熱処理を行った。ただし、１０
００℃から１２００℃の範囲の昇温速度を３０℃／ｍｉ
ｎ、降温速度を３００℃／ｍｉｎとした。Comparative Example 1 Among the above wafers, [Oi] was 1.72 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% hydrogen gas atmosphere. However, 10
The heating rate in the range of 00 ° C to 1200 ° C is set to 30 ° C / mi.
n, and the temperature lowering rate was 300 ° C./min.
【００４３】比較例２ 前記ウェーハのうち、［Ｏｉ］が１．６１×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％水素ガス雰囲気
中、１２００℃で１時間熱処理を行った。ただし、１０
００℃から１２００℃の範囲の昇温速度を３０℃／ｍｉ
ｎ、降温速度を３００℃／ｍｉｎとした。Comparative Example 2 Among the above wafers, [Oi] was 1.61 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% hydrogen gas atmosphere. However, 10
The heating rate in the range of 00 ° C to 1200 ° C is set to 30 ° C / mi.
n, and the temperature lowering rate was 300 ° C./min.
【００４４】比較例３ 前記ウェーハのうち、［Ｏｉ］が１．５０×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％水素ガス雰囲気
中、１２００℃で１時間熱処理を行った。ただし、１０
００℃から１２００℃の範囲の昇温速度を３０℃／ｍｉ
ｎ、降温速度を３００℃／ｍｉｎとした。Comparative Example 3 Among the above wafers, [Oi] was 1.50 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% hydrogen gas atmosphere. However, 10
The heating rate in the range of 00 ° C to 1200 ° C is set to 30 ° C / mi.
n, and the temperature lowering rate was 300 ° C./min.
【００４５】比較例４ 前記ウェーハのうち、［Ｏｉ］が１．６１×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％アルゴンガス雰囲
気中、１２００℃で１時間熱処理を行った。ただし、１
０００℃から１２００℃の範囲の昇温速度を６．３℃／
ｍｉｎ、降温速度を１０℃／ｍｉｎとした。Comparative Example 4 Among the above wafers, [Oi] was 1.61 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% argon gas atmosphere. However, 1
The heating rate in the range of 000 ° C to 1200 ° C is 6.3 ° C /
min, and the temperature lowering rate was 10 ° C./min.
【００４６】比較例５ 前記ウェーハのうち、［Ｏｉ］が１．７０×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％アルゴンガス雰囲
気中、１２００℃で１時間熱処理を行った。ただし、１
０００℃から１２００℃の範囲の昇温速度を３．８℃／
ｍｉｎ、降温速度を３．８℃ ／ｍｉｎとした。Comparative Example 5 Among the above wafers, [Oi] was 1.70 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% argon gas atmosphere. However, 1
The heating rate in the range of 000 ° C to 1200 ° C is 3.8 ° C /
min, and the temperature lowering rate was 3.8 ° C./min.
【００４７】比較例６ 前記ウェーハのうち、［Ｏｉ］が１．５０×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％水素ガス雰囲気
中、１２００℃で１時間熱処理を行った。ただし、１０
００℃から１２００℃の範囲の昇温速度を２〜３℃／ｍ
ｉｎ、降温速度を２〜３℃／ｍｉｎとした。Comparative Example 6 Among the above wafers, [Oi] was 1.50 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% hydrogen gas atmosphere. However, 10
The heating rate in the range of 00 ° C to 1200 ° C is set to 2 to 3 ° C / m.
in, and the temperature lowering rate was 2 to 3 ° C./min.
【００４８】比較例７ 前記ウェーハのうち、［Ｏｉ］が１．５６×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％水素ガス雰囲気
中、１２００℃で１時間熱処理を行った。ただし、１０
００℃から１２００℃の範囲の昇温速度を２〜３℃／ｍ
ｉｎ、降温速度を２〜３℃／ｍｉｎとした。Comparative Example 7 Among the above wafers, [Oi] was 1.56 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% hydrogen gas atmosphere. However, 10
The heating rate in the range of 00 ° C to 1200 ° C is set to 2 to 3 ° C / m.
in, and the temperature lowering rate was 2 to 3 ° C./min.
【００４９】比較例８ 前記ウェーハのうち、［Ｏｉ］が１．６０×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％水素ガス雰囲気
中、１２００℃で１時間熱処理を行った。ただし、１０
００℃から１２００℃の範囲の昇温速度を２〜３℃／ｍ
ｉｎ、降温速度を２〜３℃／ｍｉｎとした。Comparative Example 8 Among the above wafers, [Oi] was 1.60 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% hydrogen gas atmosphere. However, 10
The heating rate in the range of 00 ° C to 1200 ° C is set to 2 to 3 ° C / m.
in, and the temperature lowering rate was 2 to 3 ° C./min.
【００５０】比較例９ 前記ウェーハのうち、［Ｏｉ］が１．７４×１０18ａｔ
ｏｍｓ／ｃｍ3 のウェーハを１００％水素ガス雰囲気
中、１２００℃で１時間熱処理を行った。ただし、１０
００℃から１２００℃の範囲の昇温速度を２〜３℃／ｍ
ｉｎ、降温速度を２〜３℃／ｍｉｎとした。Comparative Example 9 Among the above wafers, [Oi] was 1.74 × 10 18 at
A wafer of oms / cm 3 was heat-treated at 1200 ° C. for 1 hour in a 100% hydrogen gas atmosphere. However, 10
The heating rate in the range of 00 ° C to 1200 ° C is set to 2 to 3 ° C / m.
in, and the temperature lowering rate was 2 to 3 ° C./min.
【００５１】これらの実施例および比較例の熱処理を行
ったウェーハを断面（（１１０）面）から赤外線トモグ
ラフ法により生成したＢＭＤの密度を測定した。使用し
た赤外線トモグラフ法における、検出可能なＢＭＤ最小
サイズは２０ｎｍである。この方法は測定領域によりＢ
ＭＤ密度の検出限界が異なる。本測定ではウェーハ表面
上で４×２００μｍ、深さ１８５μｍの直方体形状の領
域で測定を行った。この場合のＢＭＤ密度の測定限界は
６．８×１０6 個／ｃｍ3 である。このような条件では
本発明で規定する、大きさ２０ｎｍ以上のＢＭＤが１０
3 個／ｃｍ3 以下のＤＺ層の厚さは典型的視野で初めて
ＢＭＤが検出される表面からの深さに相当する。The densities of BMDs produced by the infrared tomography method were measured from the cross section ((110) plane) of the heat-treated wafers of these Examples and Comparative Examples. The minimum detectable BMD size in the infrared tomography method used is 20 nm. This method depends on the measurement area
The detection limit of MD density is different. In this measurement, the measurement was performed in a rectangular parallelepiped region having a depth of 185 μm and a surface of 4 × 200 μm on the wafer surface. In this case, the BMD density measurement limit is 6.8 × 10 6 pieces / cm 3 . Under such conditions, the BMD having a size of 20 nm or more defined by the present invention is 10
The thickness of 3 / cm 3 or less DZ layer first BMD typical field of view corresponds to the depth from the surface to be detected.
【００５２】測定結果を熱処理条件と併せて表１、表２
に示す。また、図２にウェーハの初期酸素濃度とＢＭＤ
密度の関係をグラフにしたものを示す。The measurement results are shown in Tables 1 and 2 together with the heat treatment conditions.
Shown in. In addition, the initial oxygen concentration of the wafer and BMD are shown in FIG.
A graphical representation of the density relationship is shown.
【００５３】[0053]
【表１】 [Table 1]
【表２】 表１、表２および図２から明らかなように、本発明の熱
処理を施したウェーハは初期酸素濃度［Ｏｉ］が低いも
のであっても良好なＤＺ層が形成され、更にバルク部に
形成されるＢＭＤを高密度とすることができる。すなわ
ち、表面から少なくとも深さ１０μｍ以上にわたって大
きさが２０ｎｍ以上のＢＭＤが１０3 個／ｃｍ3 以下で
ある無欠陥層を有し、ウェーハ内部バルク部の酸素析出
物密度［ＢＭＤ］が、［ＢＭＤ］≦１×１０10個／ｃｍ
3 、かつ［ＢＭＤ］≧ｅｘｐ｛１．１５１×１０-18 ×
［Ｏｉ］＋１．１５１｝個／ｃｍ3 であるウェーハを製
造することができる。[Table 2] As is clear from Tables 1 and 2 and FIG. 2, the heat-treated wafer of the present invention formed a good DZ layer even when the initial oxygen concentration [Oi] was low, and further formed in the bulk portion. BMD having high density can be obtained. That is, it has a defect-free layer having a BMD of 10 3 pieces / cm 3 or less with a size of 20 nm or more at least at a depth of 10 μm or more from the surface, and the oxygen precipitate density [BMD] of the bulk portion inside the wafer is [BMD] ] ≦ 1 × 10 10 pieces / cm
3 , and [BMD] ≧ exp {1.151 × 10 −18 ×
A wafer having [Oi] +1.151} / cm 3 can be manufactured.
【００５４】これに対し、比較例から理解されるよう
に、本発明の範囲外の条件で熱処理を行ったウェーハは
初期酸素濃度が高いほど形成されるＢＭＤも多いが、低
酸素濃度のウェーハでは形成されるＢＭＤ密度が低くな
ってしまうことがわかる。比較例１〜３および６では無
欠陥層は形成されるもののウェーハ内部のバルク部のＢ
ＭＤが低密度であり、十分なゲッタリング機能が果たせ
ない恐れがある。On the other hand, as can be understood from the comparative example, the wafers that have been subjected to the heat treatment under the conditions outside the scope of the present invention have more BMDs formed as the initial oxygen concentration is higher. It can be seen that the formed BMD density becomes low. In Comparative Examples 1 to 3 and 6, although the defect-free layer is formed, B of the bulk portion inside the wafer is formed.
The MD has a low density, and there is a possibility that a sufficient gettering function cannot be achieved.
【００５５】また、本発明のウェーハは、上記のように
構成されているのでデバイス活性層が無欠陥となり、バ
ルク部にＢＭＤが十分に形成されているので、良好な特
性を有するデバイスを歩留まりよく製造することができ
る。Since the wafer of the present invention is constructed as described above, the device active layer is defect-free, and the BMD is sufficiently formed in the bulk portion. Therefore, the device having good characteristics can be produced with good yield. It can be manufactured.
【００５６】[0056]
【発明の効果】本発明により初期酸素濃度の低いウェー
ハでも形成されるＢＭＤ密度を高くでき、その結果十分
なゲッタリング機能を有しているので良好な特性を有す
る高集積デバイスを歩留まりよく製造することができ
る。また、そのようなウェーハを提供することができ
る。According to the present invention, it is possible to increase the BMD density formed even on a wafer having a low initial oxygen concentration, and as a result, it has a sufficient gettering function, so that a highly integrated device having good characteristics can be manufactured with high yield. be able to. Further, such a wafer can be provided.
【図１】従来の熱処理の温度プロセスを示す図。FIG. 1 is a diagram showing a temperature process of conventional heat treatment.
【図２】ウェーハの初期酸素濃度と熱処理後のＢＭＤ密
度の関係を示す図。FIG. 2 is a diagram showing a relationship between an initial oxygen concentration of a wafer and a BMD density after heat treatment.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鹿島 一日児 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 (72)発明者 桐野 好生 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ichiko Kashima 30 Soya, Hadano City, Kanagawa Prefecture Toshiba Ceramics Co., Ltd.Development Laboratory (72) Inventor Yoshio Kirino 30 Soya, Hadano City, Kanagawa Toshiba Ceramics Co., Ltd. In development lab
Claims (2)
結晶シリコンインゴットから製造された格子間酸素濃度
［Ｏｉ］が１．５５×１０18ａｔｏｍｓ／ｃｍ3 未満の
シリコンウェーハを、不活性ガス雰囲気中で、熱処理温
度を１１００℃〜１３００℃、熱処理時間を１分間〜４
８時間、熱処理過程中１０００℃から１３００℃の温度
範囲内における昇温速度を５〜１０℃／ｍｉｎの条件で
熱処理を施すことによって、ウェーハ表面から少なくと
も深さ１０μｍ以上にわたって大きさが２０ｎｍ以上の
ＢＭＤが１０3 個／ｃｍ3 以下である無欠陥層を有し、
ウェーハ内部バルク部の酸素析出物密度［ＢＭＤ］が、
［ＢＭＤ］≦１×１０10個／ｃｍ3 、かつ［ＢＭＤ］≧
ｅｘｐ｛１．１５１×１０-17 ×［Ｏｉ］＋１．１５
１｝個／ｃｍ3 であるウェーハを製造することを特徴と
するシリコンウェーハの製造方法。1. A silicon wafer produced from a single crystal silicon ingot produced by the Czochralski method and having an interstitial oxygen concentration [Oi] of less than 1.55 × 10 18 atoms / cm 3 in an inert gas atmosphere. The heat treatment temperature is 1100 ° C to 1300 ° C, and the heat treatment time is 1 minute to 4
By performing the heat treatment for 8 hours in the temperature range of 1000 ° C. to 1300 ° C. during the heat treatment process at a temperature rising rate of 5 ° C./min to 10 ° C./min, the size of 20 nm or more from the wafer surface to a depth of 10 μm or more. A defect-free layer having a BMD of 10 3 / cm 3 or less,
The oxygen precipitate density [BMD] of the bulk part inside the wafer is
[BMD] ≦ 1 × 10 10 pieces / cm 3 , and [BMD] ≧
exp {1.151 × 10 -17 × [Oi] +1.15
A method for producing a silicon wafer, which comprises producing 1} wafers / cm 3 .
結晶シリコンインゴットから製造された格子間酸素濃度
［Ｏｉ］が１．５５×１０18ａｔｏｍｓ／ｃｍ3 未満の
シリコンウェーハを、不活性ガス雰囲気中で、熱処理温
度を１１００℃〜１３００℃、熱処理時間を１分間〜４
８時間、熱処理過程中１０００℃から１３００℃の温度
範囲内における昇温速度を５〜１０℃／ｍｉｎの条件で
熱処理を施すことによって製造された、ウェーハ表面か
ら少なくとも深さ１０μｍ以上にわたって大きさが２０
ｎｍ以上のＢＭＤが１０3 個／ｃｍ3 以下である無欠陥
層を有し、ウェーハ内部バルク部の酸素析出物密度［Ｂ
ＭＤ］が、［ＢＭＤ］≦１×１０10個／ｃｍ3 、かつ
［ＢＭＤ］≧ｅｘｐ｛１．１５１×１０-17 ×［Ｏｉ］
＋１．１５１｝個／ｃｍ3 であることを特徴とするシリ
コンウェーハ。2. A silicon wafer having an interstitial oxygen concentration [Oi] of less than 1.55 × 10 18 atoms / cm 3 manufactured from a single crystal silicon ingot manufactured by the Czochralski method is placed in an inert gas atmosphere. The heat treatment temperature is 1100 ° C to 1300 ° C, and the heat treatment time is 1 minute to 4
The size of the wafer is at least 10 μm or more deep from the wafer surface, which is manufactured by performing heat treatment for 8 hours in the temperature range of 1000 ° C. to 1300 ° C. during the heat treatment process under the condition of 5 to 10 ° C./min. 20
nm or more BMD has a defect-free layer is 10 3 / cm 3 or less, the oxygen precipitate density of the wafer inside the bulk portion [B
MD] is [BMD] ≦ 1 × 10 10 pieces / cm 3 and [BMD] ≧ exp {1.151 × 10 −17 × [Oi]
+1.151} / cm 3 silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22976594A JP3294722B2 (en) | 1994-09-26 | 1994-09-26 | Method for manufacturing silicon wafer and silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22976594A JP3294722B2 (en) | 1994-09-26 | 1994-09-26 | Method for manufacturing silicon wafer and silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0897221A true JPH0897221A (en) | 1996-04-12 |
| JP3294722B2 JP3294722B2 (en) | 2002-06-24 |
Family
ID=16897328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22976594A Expired - Lifetime JP3294722B2 (en) | 1994-09-26 | 1994-09-26 | Method for manufacturing silicon wafer and silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3294722B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897222A (en) * | 1994-09-26 | 1996-04-12 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer, and silicon wafer |
| US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
| JP2017076772A (en) * | 2015-06-12 | 2017-04-20 | キヤノン株式会社 | Imaging device and method for manufacturing the same, and camera |
| CN114280072A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Method for detecting BMD in monocrystalline silicon body |
-
1994
- 1994-09-26 JP JP22976594A patent/JP3294722B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897222A (en) * | 1994-09-26 | 1996-04-12 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer, and silicon wafer |
| US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
| JP2017076772A (en) * | 2015-06-12 | 2017-04-20 | キヤノン株式会社 | Imaging device and method for manufacturing the same, and camera |
| CN114280072A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Method for detecting BMD in monocrystalline silicon body |
| CN114280072B (en) * | 2021-12-23 | 2023-06-20 | 宁夏中欣晶圆半导体科技有限公司 | Method for detecting BMD in monocrystalline silicon body |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3294722B2 (en) | 2002-06-24 |
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